TW201800511A - 電荷輸送性塗漆 - Google Patents
電荷輸送性塗漆 Download PDFInfo
- Publication number
- TW201800511A TW201800511A TW106103505A TW106103505A TW201800511A TW 201800511 A TW201800511 A TW 201800511A TW 106103505 A TW106103505 A TW 106103505A TW 106103505 A TW106103505 A TW 106103505A TW 201800511 A TW201800511 A TW 201800511A
- Authority
- TW
- Taiwan
- Prior art keywords
- charge
- transporting
- group
- photoelectric conversion
- acid
- Prior art date
Links
- 239000003973 paint Substances 0.000 title claims description 53
- 239000000126 substance Substances 0.000 claims abstract description 57
- 238000006243 chemical reaction Methods 0.000 claims abstract description 49
- 239000002019 doping agent Substances 0.000 claims abstract description 23
- 239000003960 organic solvent Substances 0.000 claims abstract description 17
- GPUMPJNVOBTUFM-UHFFFAOYSA-N naphthalene-1,2,3-trisulfonic acid Chemical compound C1=CC=C2C(S(O)(=O)=O)=C(S(O)(=O)=O)C(S(=O)(=O)O)=CC2=C1 GPUMPJNVOBTUFM-UHFFFAOYSA-N 0.000 claims abstract description 15
- YZMHQCWXYHARLS-UHFFFAOYSA-N naphthalene-1,2-disulfonic acid Chemical compound C1=CC=CC2=C(S(O)(=O)=O)C(S(=O)(=O)O)=CC=C21 YZMHQCWXYHARLS-UHFFFAOYSA-N 0.000 claims abstract description 11
- ROZRLDJKXCKWCD-UHFFFAOYSA-N naphthalene-1,2,3,4-tetrasulfonic acid Chemical compound C1=CC=CC2=C(S(O)(=O)=O)C(S(=O)(=O)O)=C(S(O)(=O)=O)C(S(O)(=O)=O)=C21 ROZRLDJKXCKWCD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims description 17
- 239000010408 film Substances 0.000 claims description 16
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000002253 acid Substances 0.000 claims description 11
- 239000002966 varnish Substances 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 7
- 150000003577 thiophenes Chemical class 0.000 claims description 6
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 5
- 125000002490 anilino group Chemical class [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 claims 1
- -1 cyano, hydroxyl Chemical group 0.000 description 69
- 125000004432 carbon atom Chemical group C* 0.000 description 56
- 238000000034 method Methods 0.000 description 40
- 150000001875 compounds Chemical class 0.000 description 20
- 125000000217 alkyl group Chemical group 0.000 description 19
- 239000000463 material Substances 0.000 description 19
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 18
- 125000005843 halogen group Chemical group 0.000 description 17
- 239000002904 solvent Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 15
- 125000003118 aryl group Chemical group 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 13
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 12
- 125000003342 alkenyl group Chemical group 0.000 description 12
- 150000001448 anilines Chemical class 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 125000000304 alkynyl group Chemical group 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 10
- 229910052731 fluorine Inorganic materials 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 7
- 125000003545 alkoxy group Chemical group 0.000 description 7
- 239000010405 anode material Substances 0.000 description 7
- 125000003710 aryl alkyl group Chemical group 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 125000004093 cyano group Chemical group *C#N 0.000 description 7
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 7
- 125000001153 fluoro group Chemical group F* 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 125000000542 sulfonic acid group Chemical group 0.000 description 6
- 125000005309 thioalkoxy group Chemical group 0.000 description 6
- FDRNXKXKFNHNCA-UHFFFAOYSA-N 4-(4-anilinophenyl)-n-phenylaniline Chemical compound C=1C=C(C=2C=CC(NC=3C=CC=CC=3)=CC=2)C=CC=1NC1=CC=CC=C1 FDRNXKXKFNHNCA-UHFFFAOYSA-N 0.000 description 5
- 125000003277 amino group Chemical group 0.000 description 5
- 238000010893 electron trap Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 125000001188 haloalkyl group Chemical group 0.000 description 4
- 125000001072 heteroaryl group Chemical group 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- XTEGVFVZDVNBPF-UHFFFAOYSA-N naphthalene-1,5-disulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1S(O)(=O)=O XTEGVFVZDVNBPF-UHFFFAOYSA-N 0.000 description 4
- 238000010422 painting Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 125000003396 thiol group Chemical group [H]S* 0.000 description 4
- 229930192474 thiophene Natural products 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229940092714 benzenesulfonic acid Drugs 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 125000003709 fluoroalkyl group Chemical group 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- DCTMXCOHGKSXIZ-UHFFFAOYSA-N (R)-1,3-Octanediol Chemical compound CCCCCC(O)CCO DCTMXCOHGKSXIZ-UHFFFAOYSA-N 0.000 description 2
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical compound C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 2
- 125000004206 2,2,2-trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- IYYZUPMFVPLQIF-UHFFFAOYSA-N dibenzothiophene Chemical compound C1=CC=C2C3=CC=CC=C3SC2=C1 IYYZUPMFVPLQIF-UHFFFAOYSA-N 0.000 description 2
- YGUFXEJWPRRAEK-UHFFFAOYSA-N dodecyl(triethoxy)silane Chemical compound CCCCCCCCCCCC[Si](OCC)(OCC)OCC YGUFXEJWPRRAEK-UHFFFAOYSA-N 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- 125000002541 furyl group Chemical group 0.000 description 2
- AOGQPLXWSUTHQB-UHFFFAOYSA-N hexyl acetate Chemical compound CCCCCCOC(C)=O AOGQPLXWSUTHQB-UHFFFAOYSA-N 0.000 description 2
- 125000002883 imidazolyl group Chemical group 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 125000003373 pyrazinyl group Chemical group 0.000 description 2
- 125000003226 pyrazolyl group Chemical group 0.000 description 2
- 125000002098 pyridazinyl group Chemical group 0.000 description 2
- 125000004076 pyridyl group Chemical group 0.000 description 2
- 125000000714 pyrimidinyl group Chemical group 0.000 description 2
- 125000000168 pyrrolyl group Chemical group 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 125000003107 substituted aryl group Chemical group 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- VJYJJHQEVLEOFL-UHFFFAOYSA-N thieno[3,2-b]thiophene Chemical group S1C=CC2=C1C=CS2 VJYJJHQEVLEOFL-UHFFFAOYSA-N 0.000 description 2
- 125000001544 thienyl group Chemical group 0.000 description 2
- 150000003573 thiols Chemical class 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 1
- OMFOGPIVPGTWNN-UHFFFAOYSA-N 1,1,1,2,2,3,3,4,4-nonafluorobutane Chemical group F[C](F)C(F)(F)C(F)(F)C(F)(F)F OMFOGPIVPGTWNN-UHFFFAOYSA-N 0.000 description 1
- PCTZLSCYMRXUGW-UHFFFAOYSA-N 1,1,1,2,2-pentafluorobutane Chemical group [CH2]CC(F)(F)C(F)(F)F PCTZLSCYMRXUGW-UHFFFAOYSA-N 0.000 description 1
- ILPVXJWVKQMVNC-UHFFFAOYSA-N 1,1,1,2,3,3,3-heptafluoro-2-propoxypropane triethoxysilane Chemical compound C(C)O[SiH](OCC)OCC.FC(C(C(F)(F)F)(OCCC)F)(F)F ILPVXJWVKQMVNC-UHFFFAOYSA-N 0.000 description 1
- YJUUZFWMKJBVFJ-UHFFFAOYSA-N 1,3-dimethylimidazolidin-4-one Chemical compound CN1CN(C)C(=O)C1 YJUUZFWMKJBVFJ-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- KZDTZHQLABJVLE-UHFFFAOYSA-N 1,8-diiodooctane Chemical compound ICCCCCCCCI KZDTZHQLABJVLE-UHFFFAOYSA-N 0.000 description 1
- MNCMBBIFTVWHIP-UHFFFAOYSA-N 1-anthracen-9-yl-2,2,2-trifluoroethanone Chemical group C1=CC=C2C(C(=O)C(F)(F)F)=C(C=CC=C3)C3=CC2=C1 MNCMBBIFTVWHIP-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- 125000006019 1-methyl-1-propenyl group Chemical group 0.000 description 1
- 125000006021 1-methyl-2-propenyl group Chemical group 0.000 description 1
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 1
- 125000002941 2-furyl group Chemical group O1C([*])=C([H])C([H])=C1[H] 0.000 description 1
- 125000006020 2-methyl-1-propenyl group Chemical group 0.000 description 1
- 125000006022 2-methyl-2-propenyl group Chemical group 0.000 description 1
- 125000001622 2-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C(*)C([H])=C([H])C2=C1[H] 0.000 description 1
- 125000004105 2-pyridyl group Chemical group N1=C([*])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 125000000175 2-thienyl group Chemical group S1C([*])=C([H])C([H])=C1[H] 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- HXLAEGYMDGUSBD-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propan-1-amine Chemical compound CCO[Si](C)(OCC)CCCN HXLAEGYMDGUSBD-UHFFFAOYSA-N 0.000 description 1
- DOYKFSOCSXVQAN-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C(C)=C DOYKFSOCSXVQAN-UHFFFAOYSA-N 0.000 description 1
- IKYAJDOSWUATPI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propane-1-thiol Chemical compound CO[Si](C)(OC)CCCS IKYAJDOSWUATPI-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- 125000003682 3-furyl group Chemical group O1C([H])=C([*])C([H])=C1[H] 0.000 description 1
- 125000003349 3-pyridyl group Chemical group N1=C([H])C([*])=C([H])C([H])=C1[H] 0.000 description 1
- 125000001541 3-thienyl group Chemical group S1C([H])=C([*])C([H])=C1[H] 0.000 description 1
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- GZEFZLXJPGMRSP-UHFFFAOYSA-N 37,38,39,40-tetrazanonacyclo[28.6.1.13,10.112,19.121,28.04,9.013,18.022,27.031,36]tetraconta-1(37),2,4,6,8,10,12(39),13,15,17,19,21,23,25,27,29,31,33,35-nonadecaene Chemical compound c1ccc2c3cc4[nH]c(cc5nc(cc6[nH]c(cc(n3)c2c1)c1ccccc61)c1ccccc51)c1ccccc41 GZEFZLXJPGMRSP-UHFFFAOYSA-N 0.000 description 1
- 125000000339 4-pyridyl group Chemical group N1=C([H])C([H])=C([*])C([H])=C1[H] 0.000 description 1
- KDDQRKBRJSGMQE-UHFFFAOYSA-N 4-thiazolyl Chemical group [C]1=CSC=N1 KDDQRKBRJSGMQE-UHFFFAOYSA-N 0.000 description 1
- YCPXWRQRBFJBPZ-UHFFFAOYSA-N 5-sulfosalicylic acid Chemical compound OC(=O)C1=CC(S(O)(=O)=O)=CC=C1O YCPXWRQRBFJBPZ-UHFFFAOYSA-N 0.000 description 1
- CWDWFSXUQODZGW-UHFFFAOYSA-N 5-thiazolyl Chemical group [C]1=CN=CS1 CWDWFSXUQODZGW-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- HVDHZPNTFQLUHO-UHFFFAOYSA-N C1(=CC=C(C=2C(=CC(=CC1=2)S(=O)(=O)O)S(=O)(=O)O)S(=O)(=O)O)S(=O)(=O)O Chemical compound C1(=CC=C(C=2C(=CC(=CC1=2)S(=O)(=O)O)S(=O)(=O)O)S(=O)(=O)O)S(=O)(=O)O HVDHZPNTFQLUHO-UHFFFAOYSA-N 0.000 description 1
- AZSFNTBGCTUQFX-UHFFFAOYSA-N C12=C3C(C4=C5C=6C7=C8C9=C(C%10=6)C6=C%11C=%12C%13=C%14C%11=C9C9=C8C8=C%11C%15=C%16C=%17C(C=%18C%19=C4C7=C8C%15=%18)=C4C7=C8C%15=C%18C%20=C(C=%178)C%16=C8C%11=C9C%14=C8C%20=C%13C%18=C8C9=%12)=C%19C4=C2C7=C2C%15=C8C=4C2=C1C12C3=C5C%10=C3C6=C9C=4C32C1(CCCC(=O)OC)C1=CC=CC=C1 Chemical compound C12=C3C(C4=C5C=6C7=C8C9=C(C%10=6)C6=C%11C=%12C%13=C%14C%11=C9C9=C8C8=C%11C%15=C%16C=%17C(C=%18C%19=C4C7=C8C%15=%18)=C4C7=C8C%15=C%18C%20=C(C=%178)C%16=C8C%11=C9C%14=C8C%20=C%13C%18=C8C9=%12)=C%19C4=C2C7=C2C%15=C8C=4C2=C1C12C3=C5C%10=C3C6=C9C=4C32C1(CCCC(=O)OC)C1=CC=CC=C1 AZSFNTBGCTUQFX-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 229910021592 Copper(II) chloride Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- IIUWASLPDJGIAX-UHFFFAOYSA-N [F].[Sr] Chemical compound [F].[Sr] IIUWASLPDJGIAX-UHFFFAOYSA-N 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- WIGAYVXYNSVZAV-UHFFFAOYSA-N ac1lavbc Chemical compound [W].[W] WIGAYVXYNSVZAV-UHFFFAOYSA-N 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000004414 alkyl thio group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 1
- 125000002078 anthracen-1-yl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C([*])=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- 125000000748 anthracen-2-yl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C([H])=C([*])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- VMPVEPPRYRXYNP-UHFFFAOYSA-I antimony(5+);pentachloride Chemical compound Cl[Sb](Cl)(Cl)(Cl)Cl VMPVEPPRYRXYNP-UHFFFAOYSA-I 0.000 description 1
- YBGKQGSCGDNZIB-UHFFFAOYSA-N arsenic pentafluoride Chemical compound F[As](F)(F)(F)F YBGKQGSCGDNZIB-UHFFFAOYSA-N 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- MVIOINXPSFUJEN-UHFFFAOYSA-N benzenesulfonic acid;hydrate Chemical compound O.OS(=O)(=O)C1=CC=CC=C1 MVIOINXPSFUJEN-UHFFFAOYSA-N 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical class C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- LJOLGGXHRVADAA-UHFFFAOYSA-N benzo[e][1]benzothiole Chemical compound C1=CC=C2C(C=CS3)=C3C=CC2=C1 LJOLGGXHRVADAA-UHFFFAOYSA-N 0.000 description 1
- BNBQRQQYDMDJAH-UHFFFAOYSA-N benzodioxan Chemical compound C1=CC=C2OCCOC2=C1 BNBQRQQYDMDJAH-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 150000003519 bicyclobutyls Chemical group 0.000 description 1
- 150000005350 bicyclononyls Chemical group 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 description 1
- XGZGKDQVCBHSGI-UHFFFAOYSA-N butyl(triethoxy)silane Chemical compound CCCC[Si](OCC)(OCC)OCC XGZGKDQVCBHSGI-UHFFFAOYSA-N 0.000 description 1
- SXPLZNMUBFBFIA-UHFFFAOYSA-N butyl(trimethoxy)silane Chemical compound CCCC[Si](OC)(OC)OC SXPLZNMUBFBFIA-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000003889 chemical engineering Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000004148 curcumin Substances 0.000 description 1
- 125000006165 cyclic alkyl group Chemical group 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000000582 cycloheptyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- ARUKYTASOALXFG-UHFFFAOYSA-N cycloheptylcycloheptane Chemical group C1CCCCCC1C1CCCCCC1 ARUKYTASOALXFG-UHFFFAOYSA-N 0.000 description 1
- UDLGSRBEAMHGCL-UHFFFAOYSA-N cyclohexane triethoxysilane Chemical compound C(C)O[SiH](OCC)OCC.C1CCCCC1 UDLGSRBEAMHGCL-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- WVIIMZNLDWSIRH-UHFFFAOYSA-N cyclohexylcyclohexane Chemical group C1CCCCC1C1CCCCC1 WVIIMZNLDWSIRH-UHFFFAOYSA-N 0.000 description 1
- 125000006547 cyclononyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- NLUNLVTVUDIHFE-UHFFFAOYSA-N cyclooctylcyclooctane Chemical group C1CCCCCCC1C1CCCCCCC1 NLUNLVTVUDIHFE-UHFFFAOYSA-N 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- MAWOHFOSAIXURX-UHFFFAOYSA-N cyclopentylcyclopentane Chemical group C1CCCC1C1CCCC1 MAWOHFOSAIXURX-UHFFFAOYSA-N 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- ZMAPKOCENOWQRE-UHFFFAOYSA-N diethoxy(diethyl)silane Chemical compound CCO[Si](CC)(CC)OCC ZMAPKOCENOWQRE-UHFFFAOYSA-N 0.000 description 1
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 1
- UJTGYJODGVUOGO-UHFFFAOYSA-N diethoxy-methyl-propylsilane Chemical compound CCC[Si](C)(OCC)OCC UJTGYJODGVUOGO-UHFFFAOYSA-N 0.000 description 1
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 125000001028 difluoromethyl group Chemical group [H]C(F)(F)* 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- IDONGIVRXFNYRY-UHFFFAOYSA-N dimethoxy(dimethyl)silane;ethene Chemical compound C=C.CO[Si](C)(C)OC IDONGIVRXFNYRY-UHFFFAOYSA-N 0.000 description 1
- VHPUZTHRFWIGAW-UHFFFAOYSA-N dimethoxy-di(propan-2-yl)silane Chemical compound CO[Si](OC)(C(C)C)C(C)C VHPUZTHRFWIGAW-UHFFFAOYSA-N 0.000 description 1
- DIJRHOZMLZRNLM-UHFFFAOYSA-N dimethoxy-methyl-(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](C)(OC)CCC(F)(F)F DIJRHOZMLZRNLM-UHFFFAOYSA-N 0.000 description 1
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 1
- CVQVSVBUMVSJES-UHFFFAOYSA-N dimethoxy-methyl-phenylsilane Chemical compound CO[Si](C)(OC)C1=CC=CC=C1 CVQVSVBUMVSJES-UHFFFAOYSA-N 0.000 description 1
- XKRPWHZLROBLDI-UHFFFAOYSA-N dimethoxy-methyl-propylsilane Chemical compound CCC[Si](C)(OC)OC XKRPWHZLROBLDI-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- SCPWMSBAGXEGPW-UHFFFAOYSA-N dodecyl(trimethoxy)silane Chemical compound CCCCCCCCCCCC[Si](OC)(OC)OC SCPWMSBAGXEGPW-UHFFFAOYSA-N 0.000 description 1
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- CJMZLCRLBNZJQR-UHFFFAOYSA-N ethyl 2-amino-4-(4-fluorophenyl)thiophene-3-carboxylate Chemical compound CCOC(=O)C1=C(N)SC=C1C1=CC=C(F)C=C1 CJMZLCRLBNZJQR-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- HTSRFYSEWIPFNI-UHFFFAOYSA-N ethyl-dimethoxy-methylsilane Chemical compound CC[Si](C)(OC)OC HTSRFYSEWIPFNI-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000004216 fluoromethyl group Chemical group [H]C([H])(F)* 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 125000006343 heptafluoro propyl group Chemical group 0.000 description 1
- VRINOTYEGADLMW-UHFFFAOYSA-N heptyl(trimethoxy)silane Chemical compound CCCCCCC[Si](OC)(OC)OC VRINOTYEGADLMW-UHFFFAOYSA-N 0.000 description 1
- RSKGMYDENCAJEN-UHFFFAOYSA-N hexadecyl(trimethoxy)silane Chemical compound CCCCCCCCCCCCCCCC[Si](OC)(OC)OC RSKGMYDENCAJEN-UHFFFAOYSA-N 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Substances C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- VILFVXYKHXVYAB-UHFFFAOYSA-N naphthalene-2,7-disulfonic acid Chemical compound C1=CC(S(O)(=O)=O)=CC2=CC(S(=O)(=O)O)=CC=C21 VILFVXYKHXVYAB-UHFFFAOYSA-N 0.000 description 1
- KVBGVZZKJNLNJU-UHFFFAOYSA-N naphthalene-2-sulfonic acid Chemical compound C1=CC=CC2=CC(S(=O)(=O)O)=CC=C21 KVBGVZZKJNLNJU-UHFFFAOYSA-N 0.000 description 1
- 125000004998 naphthylethyl group Chemical group C1(=CC=CC2=CC=CC=C12)CC* 0.000 description 1
- 125000004923 naphthylmethyl group Chemical group C1(=CC=CC2=CC=CC=C12)C* 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000005246 nonafluorobutyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 description 1
- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
- 229960003493 octyltriethoxysilane Drugs 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000006340 pentafluoro ethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 description 1
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004344 phenylpropyl group Chemical group 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- DHRLEVQXOMLTIM-UHFFFAOYSA-N phosphoric acid;trioxomolybdenum Chemical compound O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.OP(O)(O)=O DHRLEVQXOMLTIM-UHFFFAOYSA-N 0.000 description 1
- OBCUTHMOOONNBS-UHFFFAOYSA-N phosphorus pentafluoride Chemical compound FP(F)(F)(F)F OBCUTHMOOONNBS-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- DGQOCLATAPFASR-UHFFFAOYSA-N tetrahydroxy-1,4-benzoquinone Chemical compound OC1=C(O)C(=O)C(O)=C(O)C1=O DGQOCLATAPFASR-UHFFFAOYSA-N 0.000 description 1
- CRUIOQJBPNKOJG-UHFFFAOYSA-N thieno[3,2-e][1]benzothiole Chemical compound C1=C2SC=CC2=C2C=CSC2=C1 CRUIOQJBPNKOJG-UHFFFAOYSA-N 0.000 description 1
- 150000007970 thio esters Chemical group 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- MLXDKRSDUJLNAB-UHFFFAOYSA-N triethoxy(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F MLXDKRSDUJLNAB-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- XVYIJOWQJOQFBG-UHFFFAOYSA-N triethoxy(fluoro)silane Chemical compound CCO[Si](F)(OCC)OCC XVYIJOWQJOQFBG-UHFFFAOYSA-N 0.000 description 1
- SAWDTKLQESXBDN-UHFFFAOYSA-N triethoxy(heptyl)silane Chemical compound CCCCCCC[Si](OCC)(OCC)OCC SAWDTKLQESXBDN-UHFFFAOYSA-N 0.000 description 1
- OYGYKEULCAINCL-UHFFFAOYSA-N triethoxy(hexadecyl)silane Chemical compound CCCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC OYGYKEULCAINCL-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- FZMJEGJVKFTGMU-UHFFFAOYSA-N triethoxy(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC FZMJEGJVKFTGMU-UHFFFAOYSA-N 0.000 description 1
- FHVAUDREWWXPRW-UHFFFAOYSA-N triethoxy(pentyl)silane Chemical compound CCCCC[Si](OCC)(OCC)OCC FHVAUDREWWXPRW-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- ZRQAIBMAFLMIND-UHFFFAOYSA-N triethoxy(thiophen-2-yl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CS1 ZRQAIBMAFLMIND-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- PBTDWUVVCOLMFE-UHFFFAOYSA-N triethoxy-[4-(trifluoromethyl)phenyl]silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=C(C(F)(F)F)C=C1 PBTDWUVVCOLMFE-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 1
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 description 1
- HILHCDFHSDUYNX-UHFFFAOYSA-N trimethoxy(pentyl)silane Chemical compound CCCCC[Si](OC)(OC)OC HILHCDFHSDUYNX-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/52—Electrically conductive inks
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/24—Electrically-conducting paints
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
- H01B1/124—Intrinsically conductive polymers
- H01B1/127—Intrinsically conductive polymers comprising five-membered aromatic rings in the main chain, e.g. polypyrroles, polythiophenes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
- H01B1/124—Intrinsically conductive polymers
- H01B1/128—Intrinsically conductive polymers comprising six-membered aromatic rings in the main chain, e.g. polyanilines, polyphenylenes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Conductive Materials (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
含有電荷輸送性物質與電子接受性摻雜劑物質與有機溶劑,且電子接受性摻雜劑物質係含有萘二磺酸、萘三磺酸及萘四磺酸所選出的至少1種的電荷輸送性塗漆,適合於形成可賦予高光電轉換效率的有機光電轉換元件之電洞捕集層。
Description
本發明係關於電荷輸送性塗漆。
有機太陽能電池為在活性層或電荷輸送物質中使用了有機物的太陽能電池元件,眾所周知的是由M.Gratzel開發的色素增感太陽能電池和由C.W.Tang開發的有機薄膜太陽能電池(非專利文獻1及2)。
其均為輕量、薄膜、且能夠撓性化點,能夠以輥對輥生產點等,具有與目前主流的無機系太陽能電池不同的優點,因此,期待新的市場形成。
其中,有機薄膜太陽能電池具有無電解質、無重金屬化合物等優點,而且因為最近由UCLA等團隊進行了光電轉換效率(以下簡稱為PCE)10.6%的報導等理由,而受到大的注目(非專利文獻3)。
另一方面,有機薄膜太陽能電池,與已知的使用矽系材料的光電轉換元件比較,由即使低照度中亦顯示高光電轉換效率、可元件的薄化及像素微細化、可兼具彩色濾光器之性質等之特長,不僅太陽能電池用途,作為
以有機CMOS圖像傳感器為首的光線感應器用途亦受到注目(非專利文獻4)。以下、一般將有機薄膜太陽能電池稱為有機光電轉換元件(以下簡稱OPV)進行說明。
有機光電轉換元件係具備活性層(光電轉換層)、電荷(電洞、電子)捕集層、及電極(陽極、陰極)等而構成。
此等中,活性層及電荷捕集層一般以真空蒸鍍法形成,但在真空蒸鍍法,在量產製程之複雜性、裝置之高成本化、材料的利用效率等之點有問題。
由此等之點,作為電洞捕集層用的塗佈型材料,雖亦有使用PEDOT/PSS等般水分散性高分子有機導電材料的場合,但因為水分散液而難以將水分完全除去或控制再吸濕,有易加速元件的劣化之問題。
且PEDOT/PSS水分散液,具有固形分易凝集之性質,故有易產生塗佈膜之缺陷、易產生塗佈裝置之堵塞或腐蝕之問題,在耐熱性點上亦不足,且在量產化上尚存在種種之課題。
[非專利文獻1]Nature, vol.353, 737-740(1991)
[非專利文獻2]Appl. Phys. Lett., Vol.48, 183-185 (1986)
[非專利文獻3]Nature Photonics Vol.6, 153-161 (2012)
[非專利文獻4]Scientific Reports, Vol.5:7708, 1-7 (2015)
本發明為有鑑於上述事實而成者,以提供適用於賦予高光電轉換效率的有機光電轉換元件的電洞捕集層的形成的電荷輸送性塗漆為目的。
本發明者們為了達成上述目的,努力檢討結果,發現藉由使用含有電荷輸送性物質、與含有萘二磺酸等之萘聚碸酸的電子接受性摻雜劑物質、與有機溶劑的電荷輸送性塗漆所製作的薄膜作為有機光電轉換元件的電洞捕集層,可達成高光電轉換效率而完成本發明。
即本發明為提供1.以含有電荷輸送性物質與電子接受性摻雜劑物質與有機溶劑,且前述電子接受性摻雜劑物質含有萘二磺酸、萘三磺酸及萘四磺酸所選出的至少1種為特徵之電荷輸送性塗漆、2.前述電子接受性摻雜劑物質含有萘二磺酸及萘三磺酸所選出的至少1種的1的電荷輸送性塗漆、3.前述電荷輸送性物質為分子量200~2,000的電荷輸送性物質的1或2的電荷輸送性塗漆、4.前述電荷輸送性物質為苯胺衍生物及噻吩衍生物所選出的至少1種的1~3之任一的電荷輸送性塗漆、5.為有機光電轉換元件的電洞捕集層形成用的1~4
中任一的電荷輸送性塗漆、6.有機光電轉換元件為有機薄膜太陽能電池或光線感應器的5的電荷輸送性塗漆、7.由1~6中任一的電荷輸送性塗漆所製作之電荷輸送性薄膜、8.由5的電荷輸送性塗漆所製作之電洞捕集層、9.具有8的電洞捕集層與設置為與其接觸的活性層的有機光電轉換元件、10.前述活性層含有富勒烯衍生物的9的有機光電轉換元件、11.前述活性層含有主鏈含噻吩骨架之聚合物的9的有機光電轉換元件、12.前述活性層含有富勒烯衍生物及主鏈含噻吩骨架之聚合物的9的有機光電轉換元件、13.有機薄膜太陽能電池的9~12中任一的有機光電轉換元件、14.光線感應器的9~12中任一的有機光電轉換元件。
藉由使用由本發明之電荷輸送性塗漆所製作的薄膜作為有機光電轉換元件的電洞捕集層,可得到高光電轉換效率的有機光電轉換元件。
又,本發明之電荷輸送性塗漆因為係均勻有機溶液,
故高度適合於量產製程,且使具有凹凸的下層的陽極平坦化同時顯示高均勻成膜性,故可實現元件的高良率,此外可抑制漏電,且抑制逆偏差暗電流為低值。
又本發明之有機光電轉換元件,對可見光、近紫外光、近紅外光,不依賴照射光強度而顯示高轉換效率且顯示高耐久性。
藉由此等之性質,本發明之有機光電轉換元件,可用作為太陽光發電、室內光發電等用途的有機薄膜太陽能電池,且亦可適用在包含圖像傳感器的光線感應器用途。
進一步,本發明之電荷輸送性塗漆所製作之電洞捕集層,因顯示高耐熱性,故可耐受成膜後的種種之高溫製程。
以下、將本發明進一步詳細說明。
本發明之電荷輸送性塗漆含有電荷輸送性物質與電子接受性摻雜劑物質與有機溶劑,而電子接受性摻雜劑物質含有萘二磺酸、萘三磺酸及萘四磺酸所選出的至少1種的萘聚碸酸。
本發明中,電荷輸送性物質的分子量雖不特別限定,考量導電性之點,以200~2,000為佳、下限較佳為300以上、更較佳為400以上,考量提升對溶劑之溶解性點,上限較佳為1,500以下、更較佳為1,000以下。
電荷輸送性物質,由習知電荷輸送性物質適
宜選擇使用即可,但以苯胺衍生物、噻吩衍生物為佳、尤以苯胺衍生物為佳。
此等苯胺衍生物及噻吩衍生物之具體例子,可舉例如國際公開第2005/043962號、國際公開第2013/042623號、國際公開第2014/141998號等所揭示者。
更具體上,可舉例如下述式(H1)~(H3)所表示者。
又,式(H1)所表示之苯胺衍生物可為其分子內具有下述式所示之醌二亞胺構造的氧化型苯胺衍生物(醌二亞胺衍生物)。使苯胺衍生物氧化而作成醌二亞胺衍生物之方法方面,可舉例如國際公開第2008/010474號、國際公開第2014/119782號記載之方法等。
式(H1)中,R1~R6各自獨立,為氫原子、鹵素原子、硝基、氰基、胺基、可被Z1取代的碳數1~20的烷基、碳數2~20的烯基或者碳數2~20的炔基、可被Z2取代的碳數6~20的芳基或者碳數2~20的雜芳基、-NHY1、-NY2Y3、-OY4、或-SY5基,Y1~Y5各自獨立,為可被Z1取代的碳數1~20的烷基、碳數2~20的烯基或者碳數2~20的炔基、或可被Z2取代的碳數6~20的芳基或者碳數2~20的雜芳基,Z1為鹵素原子、硝基、氰基、胺基、或可被Z3取代的碳數6~20的芳基或者碳數2~20的雜芳基,Z2為鹵素原子、硝基、氰基、胺基、或可被Z3取代的碳數1~20的烷基、碳數2~20的烯基或者碳數2~20的炔基,Z3為鹵素原子、硝基、氰基、或胺基,k及1各自獨立為1~5的整數。
式(H2)中,R7~R10各自獨立,為氫原子、鹵素原子、硝基、氰基、羥基、硫醇基、磷酸基、磺酸基、羧基、可被Z1取代的碳數1~20的烷氧基、碳數1~20的硫代烷氧基、碳數1~20的烷基、碳數2~20的烯基或者碳數2~20的炔基、可被Z2取代的碳數6~20的芳基或者碳數7~20的芳烷基、或碳數1~20的醯基,R11~R14各自獨立,為氫原子、苯基、萘基、吡啶基、嘧啶
基、噠嗪基、吡嗪基、呋喃基、吡咯基、吡唑基、咪唑基、噻吩基(此等之基可被鹵素原子、硝基、氰基、羥基、硫醇基、磷酸基、磺酸基、羧基、碳數1~20的烷氧基、碳數1~20的硫代烷氧基、碳數1~20的烷基、碳數1~20的鹵烷基、碳數2~20的烯基、碳數2~20的炔基、碳數6~20的芳基、碳數7~20的芳烷基或碳數1~20的醯基取代。)、或式(H4)所表示之基(但,R11~R14之至少1個為氫原子。),m為2~5的整數。Z1及Z2與上述同義。
式(H4)中,R15~R18各自獨立,為氫原子、鹵素原子、硝基、氰基、羥基、硫醇基、磷酸基、磺酸基、羧基、可被Z1取代的碳數1~20的烷氧基、碳數1~20的硫代烷氧基、碳數1~20的烷基、碳數2~20的烯基或者碳數2~20的炔基、可被Z2取代的碳數6~20的芳基或者碳數7~20的芳烷基、或碳數1~20的醯基,R19及R20各自獨立,為苯基、萘基、蒽基、吡啶基、嘧啶基、噠嗪基、吡嗪基、呋喃基、吡咯基、吡唑基、咪唑基、噻吩基(此等之基可相互鍵結形成環,又,可被鹵素原子、
硝基、氰基、羥基、硫醇基、磷酸基、磺酸基、羧基、碳數1~20的烷氧基、碳數1~20的硫代烷氧基、碳數1~20的烷基、碳數1~20的鹵烷基、碳數2~20的烯基、碳數2~20的炔基、碳數6~20的芳基、碳數7~20的芳烷基、或碳數1~20的醯基取代。)。Z1及Z2與上述同義。
式(H3)中,R21~R24各自獨立,為氫原子、鹵素原子、羥基、胺基、矽烷醇基、硫醇基、羧基、磺酸基、磷酸基、磷酸酯基、酯基、硫代酯基、醯胺基、硝基、可被Z1取代的碳數1~20的烷基、碳數2~20的烯基或者碳數2~20的炔基、可被Z2取代的碳數6~20的芳基或者碳數7~20的芳烷基、碳數1~20的醯基、磺酸基、-NHY1、-NY2Y3、-OY4、-SY5或-SiY6Y7Y8,Y1~Y8各自獨立,為可被Z1取代的碳數1~20的烷基、碳數2~20的烯基或者碳數2~20的炔基、或可被Z2取代的碳數6~20的芳基或者碳數2~20的雜芳基,X及Y各自獨立,為可被Z2取代的噻吩環,二噻英環所含之2個硫原子各自獨立,可為SO基或SO2基。p、q及r各自獨立,為0或1以上之整數且符合p+q+r≦20的數。Z1及Z2與上述同義。
上述各式中,鹵素原子,可舉例如氟原子、氯原子、溴原子、碘原子等。
作為碳數1~20的烷基,可為直鏈狀、分支鏈狀、環狀的任一,可舉例如甲基、乙基、n-丙基、異丙基、n-丁
基、異丁基、s-丁基、t-丁基、n-戊基、n-己基、n-庚基、n-辛基、n-壬基、n-癸基等之碳數1~20之直鏈或分支鏈狀烷基;環丙基、環丁基、環戊基、環己基、環庚基、環辛基、環壬基、環癸基、雙環丁基、雙環戊基、雙環己基、雙環庚基、雙環辛基、雙環壬基、雙環癸基等之碳數3~20的環狀烷基等。
碳數2~20的烯基的具體例子,可舉例如乙烯基、n-1-丙烯基、n-2-丙烯基、1-甲基乙烯基、n-1-丁烯基、n-2-丁烯基、n-3-丁烯基、2-甲基-1-丙烯基、2-甲基-2-丙烯基、1-乙基乙烯基、1-甲基-1-丙烯基、1-甲基-2-丙烯基、n-1-戊烯基、n-1-癸烯基、n-1-二十烯基等。
碳數2~20的炔基的具體例子,可舉例如乙炔基、n-1-丙炔基、n-2-丙炔基、n-1-丁炔基、n-2-丁炔基、n-3-丁炔基、1-甲基-2-丙炔基、n-1-戊炔基、n-2-戊炔基、n-3-戊炔基、n-4-戊炔基、1-甲基-n-丁炔基、2-甲基-n-丁炔基、3-甲基-n-丁炔基、1,1-二甲基-n-丙炔基、n-1-己炔基、n-1-癸炔基、n-1-十五炔基、n-1-二十炔基等。
碳數6~20的芳基的具體例子,可舉例如苯基、1-萘基、2-萘基、1-蒽基、2-蒽基、9-蒽基、1-菲基、2-菲基、3-菲基、4-菲基、9-菲基等。
碳數7~20的芳烷基的具體例子,可舉例如苄基、苯基乙基、苯基丙基、萘基甲基、萘基乙基、萘基丙基等。
碳數2~20的雜芳基的具體例子,可舉例如
2-噻吩基、3-噻吩基、2-呋喃基、3-呋喃基、2-噁唑基、4-噁唑基、5-噁唑基、3-異噁唑基、4-異噁唑基、5-異噁唑基、2-噻唑基、4-噻唑基、5-噻唑基、3-異噻唑基、4-異噻唑基、5-異噻唑基、2-咪唑基、4-咪唑基、2-吡啶基、3-吡啶基、4-吡啶基等。
碳數1~20的鹵烷基,可舉例如上述碳數1~20的烷基的氫原子的至少1個被鹵素原子取代者,但其中,以氟烷基為佳、全氟烷基更佳。
其具體例子,可舉例如氟甲基、二氟甲基、三氟甲基、五氟乙基、2,2,2-三氟乙基、七氟丙基、2,2,3,3,3-五氟丙基、2,2,3,3-四氟丙基、2,2,2-三氟-1-(三氟甲基)乙基、九氟丁基、4,4,4-三氟丁基、十一氟戊基、2,2,3,3,4,4,5,5,5-九氟戊基、2,2,3,3,4,4,5,5-八氟戊基、十三氟己基、2,2,3,3,4,4,5,5,6,6,6-十一氟己基、2,2,3,3,4,4,5,5,6,6-十氟己基、3,3,4,4,5,5,6,6,6-九氟己基等。
碳數1~20的烷氧基的具體例子,可舉例如甲氧基、乙氧基、n-丙氧基、i-丙氧基、c-丙氧基、n-丁氧基、i-丁氧基、s-丁氧基、t-丁氧基、n-戊氧基、n-己氧基、n-庚基氧基、n-辛基氧基、n-壬基氧基、n-癸基氧基、n-十一基氧基、n-十二基氧基、n-十三基氧基、n-十四基氧基、n-十五基氧基、n-十六基氧基、n-十七基氧基、n-十八基氧基、n-十九基氧基、n-二十基氧基等。
碳數1~20的硫代烷氧基(烷硫)基的具體例子,可舉例如甲硫基、乙基硫基、n-丙基硫基、異丙基硫
基、n-丁基硫基、異丁基硫基、s-丁基硫基、t-丁基硫基、n-戊基硫基、n-己基硫基、n-庚基硫基、n-辛基硫基、n-壬基硫基、n-癸基硫基、n-十一基硫基、n-十二基硫基、n-十三基硫基、n-十四基硫基、n-十五基硫基、n-十六基硫基、n-十七基硫基、n-十八基硫基、n-十九基硫基、n-二十基硫基等。
碳數1~20的醯基的具體例子,可舉例如甲醯基、乙醯基、丙醯基、丁醯基、異丁醯基、戊醯基、異戊醯基、苯甲醯基等。
式(H1)中,R1~R6以氫原子、鹵素原子、可被Z1取代的碳數1~20的烷基、可被Z2取代的碳數6~20的芳基、-NHY1、-NY2Y3、-OY4、或-SY5為佳,該場合中,Y1~Y5以可被Z1取代的碳數1~10的烷基或可被Z2取代的碳數6~10的芳基為佳、可被Z1取代的碳數1~6的烷基或可被Z2取代的苯基更佳、碳數1~6的烷基或苯基再佳。
尤其R1~R6以氫原子、氟原子、甲基、苯基或二苯基胺基(Y2及Y3為苯基的-NY2Y3)更佳、R1~R4為氫原子且R5及R6同時為氫原子或二苯基胺基再佳。
特別是,R1~R6及Y1~Y5中,Z1以鹵素原子或可被Z3取代的碳數6~10的芳基為佳、氟原子或苯基更佳、不存在(即無取代的基)又更佳,又,Z2以鹵素原子或可被Z3取代的碳數1~10的烷基為佳、氟原子或碳數1~6的烷基更佳、不存在(即無取代的基)又更佳。
又,Z3以鹵素原子為佳、氟原子更佳、不存在(即無取代的基)又更佳。
k及l,由提高式(H1)所表示之苯胺衍生物的溶解性觀點,較佳為k+l≦8、更較佳為k+l≦5。
式(H2)中,R7~R10以氫原子、鹵素原子、碳數1~4的烷基、碳數1~4的全氟烷基、碳數1~4的烷氧基為佳、氫原子更佳。
又,考量提高式(H2)所表示之苯胺衍生物的對溶劑之溶解性,同時提高得到的薄膜之均勻性,以R11及R13皆為氫原子為佳。
尤其以R11及R13皆為氫原子,且R12及R14各自獨立,為苯基(該苯基可被鹵素原子、硝基、氰基、羥基、硫醇基、磷酸基、磺酸基、羧基、碳數1~20的烷氧基、碳數1~20的硫代烷氧基、碳數1~20的烷基、碳數1~20的鹵烷基、碳數2~20的烯基、碳數2~20的炔基、碳數6~20的芳基、碳數7~20的芳烷基、或碳數1~20的醯基取代。)、或上述式(H4)所表示之基為佳,R11及R13皆為氫原子,且R12及R14各自獨立為苯基、或R19’及R20’皆為苯基的下述式(H4’)所表示之基較佳、R11及R13皆為氫原子且R12及R14皆為苯基再佳。
又,m方面,考量化合物的取得容易性、製造的容易性、成本面等,以2~4為佳,考量使對溶劑的溶解性提高,以2或3更佳,考量化合物的取得容易性、製造的容易性、製造成本、對溶劑的溶解性、得到的薄膜之透明性
等之平衡,以2為最佳。
式(H3)中,R21~R24以氫原子、氟原子、磺酸基、碳數1~8的烷基、-OY4基、-SiY6Y7Y8基為佳、氫原子更佳。
又,p、q及r由使該化合物的溶解性提高觀點,以各自為1以上、且p+q+r≦20為佳、各自為1以上、且p+q+r≦10更佳。進一步,由表現高電荷輸送性觀點,以各自為1以上、且5≦p+q+r為佳、q為1、p及r各自為1以上、且5≦p+q+r更佳。
式(H1)~(H3)所表示之苯胺衍生物或噻吩衍生物,可使用市售品,亦可使用以上述各公報所記載的方法等之習知方法所製造者,但任一場合皆以使用在調製電荷輸送性塗漆前,以再結晶或蒸鍍法等精製者為佳。藉由使用精製者,可使具備由該塗漆得到的薄膜之有機光電轉換元件的特性更提高。以再結晶精製時,溶劑可使用例如1,4-二噁烷、四氫呋喃等。
本發明之電荷輸送性塗漆中,式(H1)~(H3)所表示之電荷輸送性物質方面,可單獨使用由式(H1)~(H3)
所表示之化合物所選出的1種化合物(即、分子量分布的分散度為1),亦可組合2種以上之化合物使用。
尤其由提高電洞捕集層的透明性觀點,以使用式(H2)所表示之苯胺衍生物為佳、其中以使用上述m為2之聯苯胺衍生物更佳、使用下述式(g)所表示之二苯基聯苯胺再佳。
在本發明較宜使用的電荷輸送性物質的具體例子,可舉例如下述者,但不限於此等。
本發明之電荷輸送性塗漆,除上述電荷輸送性物質外,含有含由萘二磺酸、萘三磺酸及萘四磺酸所選出的至少1種的萘聚碸酸之電子接受性摻雜劑物質。
萘聚碸酸的具體例子,可舉例如1,5-萘二磺酸、2,7-萘二磺酸等之萘二磺酸、1,3,5-萘三磺酸、1,3,6-萘三磺酸等之萘三磺酸、1,4,5,7-萘四磺酸等之萘四磺酸等,其中,以萘二磺酸、萘三磺酸為佳。
又,上述萘聚碸酸外,因應得到的薄膜之用途,以使得到的有機光電轉換元件的光電轉換效率提升等為目的,可含有其他的電子接受性摻雜劑物質。
其他的電子接受性摻雜劑物質為溶解於電荷輸送性塗漆所使用的至少一種的溶劑者,則不特別限定。
其他的電子接受性摻雜劑物質的具體例子,可舉例如氯化氫、硫酸、硝酸、磷酸等之無機強酸;氯化鋁(III)(AlCl3)、四氯化鈦(IV)(TiCl4)、三溴化硼(BBr3)、三氟化硼醚錯合物(BF3.OEt2)、氯化鐵(III)(FeCl3)、氯化銅(II)(CuCl2)、五氯化銻(V)(SbCl5)、五氟化砷(V)(AsF5)、五氟化磷(PF5)、參(4-溴苯基)鋁六氯銻酸鹽(TBPAH)等之路易士酸;苯磺酸、對甲苯磺酸、樟腦磺酸、羥基苯磺酸、5-磺基水楊酸、十二基苯磺酸、聚苯乙烯磺酸、國際公開第2005/000832號所記載的1,4-苯並二噁烷二磺酸化合物、國際公開第2006/025342號所記載的萘或蒽磺酸化合物、日本特開2005-108828號公報所記載的二壬基萘磺酸化合物等之芳基磺酸化合物等之有機強酸;7,7,8,8-四氰基苯醌二甲烷(TCNQ)、2,3-二氯-5,6-二氰基-1,4-苯並醌(DDQ)、碘等之有機氧化劑、國際公開第2010/058777號所記載的磷鉬酸、磷鎢酸、磷鎢鉬酸等之雜多元酸等之無機氧化劑等,亦可將各自組合使用。
電荷輸送性塗漆的調製所使用的有機溶劑方面,可使用可良好地溶解上述電荷輸送性物質及電子接受性摻雜劑物質之高溶解性溶劑。高溶解性溶劑可1種單獨
或2種以上混合使用,其使用量相對塗漆所使用的溶劑全體可為5~100質量%。
如此之高溶解性溶劑,可舉例如N-甲基甲醯胺、N,N-二甲基甲醯胺、N,N-二乙基甲醯胺、N-甲基乙醯胺、N,N-二甲基乙醯胺、N-甲基吡咯啶酮、1,3-二甲基-2-咪唑啉酮等。
此等之中,以醯胺系溶劑之N-甲基甲醯胺、N,N-二甲基甲醯胺、N,N-二乙基甲醯胺、N-甲基乙醯胺、N,N-二甲基乙醯胺為佳、N,N-二甲基乙醯胺更佳。
電荷輸送性物質及電子接受性摻雜劑物質,皆以成為於上述有機溶劑完全溶解、或均勻分散之狀態為佳,考量再現性佳地得到賦予高光電轉換效率的有機光電轉換元件的電洞捕集層,此等之物質以於上述有機溶劑完全溶解更佳。
本發明之電荷輸送性塗漆,以含有至少一種類具有在25℃為10~200mPa‧s、尤其35~150mPa‧s之黏度,且在常壓為沸點50~300℃、尤其150~250℃的高黏度有機溶劑為佳。
高黏度有機溶劑,不特別限定,可舉例如環己醇、乙二醇、1,3-辛二醇、二乙二醇、二丙二醇、三乙二醇、三丙二醇、1,3-丁二醇、2,3-丁二醇、1,4-丁二醇、丙二醇、己二醇等。
相對本發明之電荷輸送性塗漆所使用的溶劑全體之高黏度有機溶劑的添加比例,以固體不析出的範圍
內為佳,固體不析出下,添加比例以5~80質量%為佳。
進一步,以對塗佈面的潤濕性的提升、溶劑的表面張力的調整、極性的調整、沸點的調整等之目的,亦可以相對塗漆所使用的溶劑全體為1~90質量%、較佳為1~50質量%的比例混合熱處理時可賦予膜之平坦性的其他的溶劑。
如此之溶劑,可舉例如丁基溶纖劑、二乙二醇二乙基醚、二乙二醇二甲基醚、二乙二醇單乙基醚乙酸酯、二乙二醇單丁基醚乙酸酯、二丙二醇單甲基醚、丙二醇單甲基醚、丙二醇單甲基醚乙酸酯、乙基卡必醇、二丙酮醇、γ-丁內酯、乙基乳酸酯、n-己基乙酸酯等,但不限於此等。
本發明之電荷輸送性塗漆中,由使得到的有機光電轉換元件的電子阻斷性提升觀點,可添加有機矽烷化合物。
有機矽烷化合物方面,可舉例如三烷氧基矽烷、二烷氧基矽烷等,尤以芳基三烷氧基矽烷、芳基二烷氧基矽烷、含氟原子之三烷氧基矽烷、含氟原子之二烷氧基矽烷化合物為佳、式(S1)或(S2)所表示之矽烷化合物更佳。
【化8】RSi(OCH3)3 (S1) RSi(OC2H5)3 (S2)
(式中,R為碳數1~6的氟烷基。)
碳數1~6的氟烷基的具體例子,可舉例如三氟甲基、2,2,2-三氟乙基、1,1,2,2,2-五氟乙基、3,3,3-三氟丙基、2,2,3,3,3-五氟丙基、1,1,2,2,3,3,3-七氟丙基、4,4,4-三氟丁基、3,3,4,4,4-五氟丁基、2,2,3,3,4,4,4-七氟丁基、1,1,2,2,3,3,4,4,4-九氟丁基等。
二烷氧基矽烷化合物的具體例子,可舉例如二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、甲基乙基二甲氧基矽烷、二乙基二甲氧基矽烷、二乙基二乙氧基矽烷、甲基丙基二甲氧基矽烷、甲基丙基二乙氧基矽烷、二異丙基二甲氧基矽烷、苯基甲基二甲氧基矽烷、乙烯基甲基二甲氧基矽烷、3-環氧丙氧基丙基甲基二甲氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷、3-(3,4-環氧基環己基)乙基甲基二甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二乙氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、γ-胺基丙基甲基二乙氧基矽烷、N-(2-胺基乙基)胺基丙基甲基二甲氧基矽烷、3,3,3-三氟丙基甲基二甲氧基矽烷等。
三烷氧基矽烷化合物的具體例子,可舉例如甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、丙基三甲氧基矽烷、丙基三乙氧基矽烷、丁基三甲氧基矽烷、丁基三乙氧基矽烷、戊基三甲氧基矽烷、戊基三乙氧基矽烷、庚基三甲氧基矽烷、庚基三乙氧基矽烷、辛基三甲氧基矽烷、辛基三乙氧基矽烷、十二基三甲氧基矽烷、十二基三乙氧基矽烷、十六基
三甲氧基矽烷、十六基三乙氧基矽烷、十八基三甲氧基矽烷、十八基三乙氧基矽烷、苯基三甲氧基矽烷、苯基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、γ-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、γ-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、γ-甲基丙烯醯氧基丙基三乙氧基矽烷、三乙氧基(4-(三氟甲基)苯基)矽烷、十二基三乙氧基矽烷、3,3,3-三氟丙基三甲氧基矽烷、(三乙氧基矽烷基)環己烷、全氟辛基乙基三乙氧基矽烷、三乙氧基氟矽烷、十三氟-1,1,2,2-四氫辛基三乙氧基矽烷、3-(七氟異丙氧基)丙基三乙氧基矽烷、十七氟-1,1,2,2-四氫癸基三乙氧基矽烷、三乙氧基-2-噻吩基矽烷、3-(三乙氧基矽烷基)呋喃等。
使用有機矽烷化合物時,其含量相對本發明之電荷輸送性塗漆的電荷輸送性物質及電子接受性摻雜劑物質,通常為0.1~200質量%程度、較佳為1~100質量%、更較佳為5~50質量%。
本發明之電荷輸送性塗漆的固形分濃度,為考量塗漆之黏度及表面張力等或製作薄膜之厚度等而適宜設定者,通常為0.1~10.0質量%程度、較佳為0.5~5.0質量%、更較佳為1.0~3.0質量%。
又,固形分係指構成電荷輸送性塗漆之有機溶劑以外的成分。
又,電荷輸送性物質與電子接受性摻雜劑物質的物質
量(mol)比亦為考量表現的電荷輸送性、電荷輸送性物質的種類等而適宜設定者,但通常相對電荷輸送性物質1,電子接受性摻雜劑物質為0.1~10、較佳為0.2~5.0、更較佳為0.5~3.0。
而,本發明中使用的電荷輸送性塗漆之黏度,為考量製作薄膜之厚度等或固形分濃度,因應塗佈方法而適宜調節者,但通常在25℃為0.1~50mPa‧s程度。
調製本發明之電荷輸送性塗漆時,固形分在溶劑中均勻溶解或分散下,可以任意順序混合電荷輸送性物質、電子接受性摻雜劑物質、有機溶劑。即例如於有機溶劑中溶解電荷輸送性物質後,於該溶液溶解電子接受性摻雜劑物質之方法、有機溶劑中溶解電子接受性摻雜劑物質後,於該溶液溶解電荷輸送性物質之方法、將電荷輸送性物質與電子接受性摻雜劑物質混合後,將該混合物投入有機溶劑使其溶解之方法,在固形分於有機溶劑中均勻溶解或分散下,皆可採用。
又,通常電荷輸送性塗漆的調製在常溫、常壓的惰性氣體環境下進行,但塗漆中的化合物不分解、組成無大變化下,可在大氣環境下(氧存在下)進行,亦可邊加熱邊進行。
藉由將以上說明的電荷輸送性塗漆塗佈於有機光電轉換元件的陽極後進行燒成,可形成本發明之電洞捕集層。
考量塗佈時塗漆之黏度與表面張力、期望的薄膜之厚
度等,由滴鑄塗佈法、旋轉塗佈法、刀塗佈法、浸漬塗佈法、輥塗法、棒塗佈法、模塗法、噴墨法、印刷法(凸版、凹版、平版、網版印刷等)等之各種濕製程法中採用最適當者即可。
通常塗佈雖在常溫、常壓的惰性氣體環境下進行,但在塗漆中的化合物不分解、組成無大變化下,可在大氣環境下(氧存在下)進行,亦可邊加熱邊進行。
膜厚通常為1~200nm程度,但較佳為3~100nm程度、更較佳為3~30nm。改變膜厚的方法方面,有改變塗漆中的固形分濃度、改變塗佈時的溶液量等之方法。
以下、說明使用本發明之電荷輸送性塗漆的有機光電轉換元件之製造方法。
陽極材料方面,可使用銦錫氧化物(ITO)、銦鋅氧化物(IZO)等之金屬氧化物或聚噻吩衍生物、聚苯胺衍生物等之高電荷輸送性有機化合物。又,透明基板方面,可使用玻璃或者透明樹脂所構成的基板。
陽極材料的層(陽極層)之形成方法,因應陽極材料的性質而適宜選擇,通常可採用使用昇華性化合物的乾製程(蒸鍍法)或使用含電荷輸送性化合物的塗漆的濕製程(尤其旋轉塗佈法或狹縫塗佈法)之任一。
又,作為透明電極,亦可適宜使用市售品,該場合,
由提升元件的良率之觀點,以使用經平滑化處理的基盤為佳。使用市售品時,本發明之有機光電轉換元件之製造方法,不包含形成陽極層的步驟。
使用之透明電極,以用洗劑、醇、純水等洗淨後使用為佳。例如在陽極基板,以使用前實施UV臭氧處理、氧-電漿處理等之表面處理為佳(陽極材料以有機物為主成分時,可不進行表面處理)。
依據上述方法,在陽極材料層上使用本發明之電荷輸送性塗漆,形成電洞捕集層。
活性層可為層合n型半導體材料所構成的薄膜之n層與p型半導體材料所構成的薄膜之p層者,亦可為由此等材料的混合物所構成的非層合薄膜。
n型半導體材料,可舉例如富勒烯、〔6,6〕-苯基-C61-酪酸甲基酯(PC61BM)、〔6,6〕-苯基-C71-酪酸甲基酯(PC71BM)等。另一方面,p型半導體材料,可舉例如Regioregular聚(3-己基噻吩)(P3HT)、PTB7、PDTP-DFBT、日本特開2009-158921號公報及國際公開第2010/008672號所記載般含噻吩並噻吩單元之聚合物類等之主鏈含噻吩骨架之聚合物、CuPC,ZnPC等之酞菁類、
四苯並卟啉等之卟啉類等。
此等之中,n型材料方面,以PC61BM、PC71BM,p型材料方面,以PTB7等之主鏈含噻吩骨架之聚合物類為佳。
又,在此所謂「主鏈噻吩骨架」係指僅由噻吩所構成的2價芳香環、或噻吩並噻吩、苯並噻吩、二苯並噻吩、苯並二噻吩、萘並噻吩、萘並二噻吩、蒽並噻吩、蒽並二噻吩等般含1個以上之噻吩的2價縮合芳香環,此等可被上述R1~R6所示之取代基取代。
活性層的形成方法,因應n型半導體或者p型半導體材料的性質而適宜選擇,通常採用使用昇華性化合物的乾製程(尤其蒸鍍法)、或使用含材料之塗漆的濕製程(尤其旋轉塗佈法或狹縫塗佈法)之任一。
(式中,n1及n2為重複單位數,為正的整數。)
因應必要可於活性層與陰極層間形成電子捕集層。
形成電子捕集層之材料,可舉例如氧化鋰(Li2O)、氧化鎂(MgO)、氧化鋁(Al2O3)、氟化鋰(LiF)、氟化鎂(MgF2)、氟化鍶(SrF2)等。
電子捕集層的形成方法,因應其材料的性質而適宜選擇,通常採用使用昇華性化合物的乾製程(尤其蒸鍍法)或使用含材料之塗漆的濕製程(尤其旋轉塗佈法或狹縫塗佈法)之任一。
陰極材料,可舉例如鋁、鎂-銀合金、鋁-鋰合金、鋰、鈉、鉀、銫、鈣、鋇、銀、金等,可將複數陰極材料層合、或混合後使用。
陰極層的形成方法,因應其材料的性質而適宜選擇,但通常採用乾製程(尤其蒸鍍法)。
因應必要以控制光電流的整流性等目的,可在任意層間設置載體阻隔層。
形成載體阻隔層的材料,可舉例如氧化鈦、氧化鋅等。
載體阻隔層的形成方法,因應其材料的性質而適宜選擇,通常使用昇華性化合物時採用蒸鍍法,使用溶解有材料的塗漆時,採用旋轉塗佈法或狹縫塗佈法之任一。
以上述例示的方法所製作的有機光電轉換元件,為了防止大氣所致之元件劣化,可再度置入手套箱內在氮等之惰性氣體環境下進行密封操作,並在密封狀態使發揮作為有機光電轉換元件的機能、或進行其特性的測定。
密封法方面,可舉例如將端部附著有UV硬化樹脂的凹型玻璃基板在惰性氣體環境下,附著於有機光電轉換元件的成膜面側,藉由UV照射使樹脂硬化之方法、或在真空下藉由濺鍍等之手法進行膜密封型的密封之方法等。
以下、以實施例及比較例,將本發明更具體說明,但本發明不限於下述實施例。又,使用之裝置如下。
(1)手套箱:美國VAC公司製手套箱系統
(2)蒸鍍裝置:Aoyama Engineering(股)製 真空蒸鍍裝置
(3)測定裝置:(股)小坂研究所製 全自動微細形狀測定機ET-4000A
(4)電流值測定使用的裝置:Agilent(股)製4156C精
準半導體參數分析儀
(5)光電流測定使用的光源裝置:分光計器(股)製SM-250 Hyper Monolight System
在添加有PTB7(萬碼鐵弩公司製)20mg及PCBM(Frontier Carbon Corporation製,製品名:nanom spectra E100)30mg的樣本瓶中,加入氯苯2.0mL,在80℃的加熱板上進行15小時攪拌。使該溶液放冷至室溫後,加入1,8-二碘辛烷(東京化成工業(股)製)60μL後進行攪拌,得到活性層用組成物A1。
於式〔1〕所示之N,N’-二苯基聯苯胺(東京化成工業(股)製,以下同樣)322.5mg(0.959mmol)與式〔2〕所示之1,3,6-萘三磺酸(富山藥品工業(股)製)188.3mg(0.511mmol)之混合物中,加入N,N-二甲基乙醯胺(以下、DMAc)12.5g,在室溫邊施以超音波邊攪拌使其溶解。進一步於其中,加入環己醇(以下、CHN)12.5g進行攪拌,得到褐色溶液。
得到的褐色溶液以孔徑0.2μm的注射式過濾器過濾,得到電荷輸送性塗漆B1。
於N,N’-二苯基聯苯胺60.5mg(0.180mmol)與式〔3〕所示之1,5-萘二磺酸(東京化成工業(股)製)41.5mg(0.144mmol)之混合物中,加入DMAc2.5g,在室溫邊施以超音波邊攪拌使其溶解。進一步於其中加入CHN2.5g進行攪拌,得到褐色溶液。
得到的褐色溶液以孔徑0.2μm的注射式過濾器過濾,得到電荷輸送性塗漆B2。
於N,N’-二苯基聯苯胺51.3mg(0.153mmol)與式〔4〕
所示之2-萘磺酸(東京化成工業(股)製)50.8mg(0.244mmol)之混合物中,加入DMAc2.5g,在室溫邊施以超音波邊攪拌使其溶解。進一步於其中加入CHN2.5g進行攪拌,得到褐色溶液。
得到的褐色溶液以孔徑0.2μm的注射式過濾器過濾,得到電荷輸送性塗漆C1。
於N,N’-二苯基聯苯胺58.3mg(0.173mmol)與式〔5〕所示之苯磺酸(東京化成工業(股)製)43.9mg(0.277mmol)之混合物中,加入DMAc2.5g,在室溫邊施以超音波邊攪拌使其溶解。進一步於其中加入CHN2.5g進行攪拌,得到褐色溶液。
得到的褐色溶液以孔徑0.2μm的注射式過濾器過濾,得到電荷輸送性塗漆C2。
將使成為正極的ITO透明導電層圖案化為2mm×20mm的條紋狀的20mm×20mm的玻璃基板進行15分鐘UV/臭氧處理之後,在基板上利用旋塗法塗佈實施例1-1所得的電荷輸送性塗漆B1。使用加熱板將該玻璃基板在50℃加熱5分鐘,進一步在230℃加熱20分鐘,而形成電洞捕集層。
之後,在經惰性氣體取代的手套箱中,將調製例1所得的活性層用組成物A1滴下於形成的電洞捕集層上,並以旋轉塗佈法進行成膜。
接著,在真空蒸鍍裝置內設置形成有有機半導體層的基板與負極用遮罩,排氣至裝置內之真空度成為1×10-3Pa以下,以電阻加熱法,使成為負極之鋁層蒸鍍為80nm的厚度。
最後以加熱板在80℃,進行10分鐘加熱,製作條紋狀的ITO層與鋁層交叉部分的面積為2mm×2mm之OPV元件。
除取代電荷輸送性塗漆B1而使用電荷輸送性塗漆B2以外,以與實施例2-1同樣之方法,製作OPV元件。
除取代電荷輸送性塗漆B1而使用電荷輸送性塗漆C1以外,以與實施例2-1同樣之方法,製作OPV元件。
除取代電荷輸送性塗漆B1而使用電荷輸送性塗漆C2以外,以與實施例2-1同樣之方法,製作OPV元件。
對上述製作的各OPV元件,進行短路電流密度(Jsc[mA/cm2])、開放電壓(Voc[V])、曲線因子(FF)、及光電轉換效率(PCE[%])的評估。結果如表1。又光電轉換效率為以下式算出。
PCE[%]=Jsc[mA/cm2]×Voc[V]×FF÷入射光強度(100[mW/cm2])×100
如表1所示,可知相較於具備使用萘單磺酸(比較例2-1)或苯磺酸(比較例2-2)作為電子接受性摻雜劑物質的塗漆所製作的電荷輸送性薄膜之OPV元件,具備
含有萘三磺酸(實施例2-1)或萘二磺酸(實施例2-2)作為電子接受性摻雜劑物質的塗漆所製作的電荷輸送性薄膜之元件,顯示較高轉換效率。
Claims (14)
- 一種電荷輸送性塗漆,其特徵係含有電荷輸送性物質與電子接受性摻雜劑物質與有機溶劑,且前述電子接受性摻雜劑物質含有萘二磺酸、萘三磺酸及萘四磺酸所選出之至少1種。
- 如請求項1記載之電荷輸送性塗漆,其中,前述電子接受性摻雜劑物質含有由萘二磺酸及萘三磺酸所選出的至少1種。
- 如請求項1或2記載之電荷輸送性塗漆,其中,前述電荷輸送性物質為分子量200~2,000的電荷輸送性物質。
- 如請求項1~3中任1項記載之電荷輸送性塗漆,其中,前述電荷輸送性物質為由苯胺衍生物及噻吩衍生物所選出的至少1種。
- 如請求項1~4中任1項記載之電荷輸送性塗漆,其為有機光電轉換元件的電洞捕集層形成用。
- 如請求項5記載之電荷輸送性塗漆,其中,有機光電轉換元件為有機薄膜太陽能電池或光線感應器。
- 一種電荷輸送性薄膜,其特徵係由請求項1~6中任1項記載之電荷輸送性塗漆所製作。
- 一種電洞捕集層,其特徵係由請求項5記載之電荷輸送性塗漆所製作。
- 一種有機光電轉換元件,其特徵係具有請求項8記 載之電洞捕集層與設置為與其接觸的活性層。
- 如請求項9記載之有機光電轉換元件,其中,前述活性層含有富勒烯衍生物。
- 如請求項9記載之有機光電轉換元件,其中,前述活性層含有主鏈含噻吩骨架之聚合物。
- 如請求項9記載之有機光電轉換元件,其中,前述活性層含有富勒烯衍生物及主鏈含噻吩骨架之聚合物。
- 如請求項9~12中任1項記載之有機光電轉換元件,其為有機薄膜太陽能電池。
- 如請求項9~12中任1項記載之有機光電轉換元件,其為光線感應器。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-018989 | 2016-02-03 | ||
| JP2016018989 | 2016-02-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201800511A true TW201800511A (zh) | 2018-01-01 |
| TWI726049B TWI726049B (zh) | 2021-05-01 |
Family
ID=59499548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106103505A TWI726049B (zh) | 2016-02-03 | 2017-02-02 | 電荷輸送性塗漆 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11028277B2 (zh) |
| EP (1) | EP3413367B1 (zh) |
| JP (1) | JP6988483B2 (zh) |
| KR (1) | KR20180105219A (zh) |
| CN (1) | CN108886099B (zh) |
| TW (1) | TWI726049B (zh) |
| WO (1) | WO2017135117A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI888708B (zh) * | 2021-03-10 | 2025-07-01 | 南韓商周星工程股份有限公司 | 太陽能電池及其製造方法 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN120583834A (zh) * | 2018-07-04 | 2025-09-02 | 日产化学株式会社 | 电荷传输性组合物 |
| WO2020153180A1 (ja) * | 2019-01-23 | 2020-07-30 | 日産化学株式会社 | ペロブスカイト光電変換素子用電荷輸送性組成物 |
| CN113054120B (zh) * | 2019-12-28 | 2022-05-31 | Tcl科技集团股份有限公司 | 电子阻挡薄膜,量子点发光二极管及其制备方法 |
| WO2024072553A2 (en) * | 2022-08-09 | 2024-04-04 | The Trustees Of Princeton University | Perovskite solar cells with strain-release layers |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4935163A (en) * | 1988-08-01 | 1990-06-19 | Lockheed Corporation | High service temperature conductive polymers and method of producing same |
| JP2866996B2 (ja) | 1991-02-01 | 1999-03-08 | 日東電工株式会社 | 有機重合体溶液 |
| JP2003234473A (ja) * | 2002-02-06 | 2003-08-22 | Canon Inc | 有機半導体素子の製造方法 |
| JP4596165B2 (ja) | 2003-06-25 | 2010-12-08 | 日産化学工業株式会社 | 1,4−ベンゾジオキサンスルホン酸化合物及び電子受容性物質としての利用 |
| JP5024498B2 (ja) | 2003-09-11 | 2012-09-12 | 日産化学工業株式会社 | 電荷輸送性ワニス、電荷輸送性薄膜および有機エレクトロルミネッセンス素子 |
| WO2005043962A1 (ja) * | 2003-10-31 | 2005-05-12 | Nissan Chemical Industries, Ltd. | 1,4−ジチイン環を有する化合物を含む電荷輸送性有機材料 |
| TW200615254A (en) | 2004-08-31 | 2006-05-16 | Nissan Chemical Ind Ltd | Arylsulfonic acid compound and use thereof as electron-acceptor material |
| JP5308661B2 (ja) * | 2005-02-10 | 2013-10-09 | 日本カーリット株式会社 | 色素増感型太陽電池用の触媒電極、及びそれを備えた色素増感型太陽電池 |
| CA2655135C (en) * | 2006-06-13 | 2016-06-07 | Plextronics, Inc. | Organic photovoltaic devices comprising fullerenes and derivatives thereof |
| US8575392B2 (en) | 2006-07-18 | 2013-11-05 | Nissan Chemical Industries, Ltd. | Charge-transporting varnish |
| US8357770B2 (en) * | 2006-09-13 | 2013-01-22 | Nissan Chemical Industries, Ltd. | Oligoaniline compound and use thereof |
| DE102007038906A1 (de) | 2007-08-17 | 2009-04-02 | Siemens Ag | Verfahren und Vorrichtung zur Detektion elektrophoretisch aufgetrennter Analyten |
| WO2009070534A1 (en) * | 2007-11-28 | 2009-06-04 | Konarka Technologies Gmbh | Organic photovoltaic cells comprising a doped metal oxide buffer layer |
| JP5359173B2 (ja) | 2007-12-05 | 2013-12-04 | 東レ株式会社 | 光起電力素子用電子供与性有機材料、光起電力素子用材料および光起電力素子 |
| KR100999377B1 (ko) * | 2008-06-18 | 2010-12-09 | 한국과학기술원 | 유기기반 태양전지 및 그의 제조방법 |
| WO2010008672A1 (en) | 2008-07-18 | 2010-01-21 | University Of Chicago | Semiconducting polymers |
| JP2010123930A (ja) | 2008-10-22 | 2010-06-03 | Nissan Chem Ind Ltd | 電荷輸送性材料および電荷輸送性ワニス |
| WO2010058777A1 (ja) | 2008-11-19 | 2010-05-27 | 日産化学工業株式会社 | 電荷輸送性材料および電荷輸送性ワニス |
| US9209404B2 (en) * | 2009-10-29 | 2015-12-08 | Sumitomo Chemical Company, Limited | Macromolecular compound |
| CN102666501B (zh) * | 2009-12-14 | 2015-08-26 | 凸版印刷株式会社 | 蒽衍生物和发光元件 |
| WO2013042623A1 (ja) | 2011-09-21 | 2013-03-28 | 日産化学工業株式会社 | 電荷輸送性ワニス |
| JP6648968B2 (ja) | 2013-02-04 | 2020-02-19 | 日産化学株式会社 | 有機薄膜太陽電池用バッファ層の製造方法及び有機薄膜太陽電池の製造方法 |
| KR102270150B1 (ko) * | 2013-03-11 | 2021-06-28 | 닛산 가가쿠 가부시키가이샤 | 전하 수송성 바니시 |
| JP6147542B2 (ja) * | 2013-04-01 | 2017-06-14 | 株式会社東芝 | 透明導電フィルムおよび電気素子 |
| CN105531778B (zh) | 2013-08-30 | 2019-01-08 | 松下知识产权经营株式会社 | 电解电容器及其制造方法 |
| CN104517665B (zh) * | 2013-10-04 | 2018-12-11 | 日产化学工业株式会社 | 电荷传输性清漆、电荷传输性薄膜、有机电致发光元件和电荷传输性薄膜的制造方法 |
| JP2015127409A (ja) * | 2013-11-29 | 2015-07-09 | 三菱化学株式会社 | 金属酸化物含有層形成用組成物、及び電子デバイスその製造方法 |
| EP3082171B1 (en) * | 2013-12-09 | 2022-04-27 | Nissan Chemical Corporation | Composition for anode buffer layer of organic thin film solar cell and organic thin film solar cell |
| JP2015195254A (ja) * | 2014-03-31 | 2015-11-05 | Jfeスチール株式会社 | 有機薄膜太陽電池及び太陽光発電モジュール |
| JP7141826B2 (ja) * | 2015-03-17 | 2022-09-26 | 日産化学株式会社 | 光センサ素子の正孔捕集層形成用組成物および光センサ素子 |
| KR20180019146A (ko) * | 2015-06-22 | 2018-02-23 | 스미또모 가가꾸 가부시키가이샤 | 유기 전자 소자의 제조 방법 및 유기 박막의 형성 방법 |
| BR112018009223B1 (pt) * | 2015-11-06 | 2023-01-24 | Nissan Chemical Industries, Ltd | Dispositivo de conversão fotoelétrica orgânica e composição de transporte de carga |
-
2017
- 2017-01-25 CN CN201780009466.XA patent/CN108886099B/zh not_active Expired - Fee Related
- 2017-01-25 US US16/074,991 patent/US11028277B2/en active Active
- 2017-01-25 WO PCT/JP2017/002511 patent/WO2017135117A1/ja not_active Ceased
- 2017-01-25 KR KR1020187024870A patent/KR20180105219A/ko not_active Withdrawn
- 2017-01-25 JP JP2017565498A patent/JP6988483B2/ja active Active
- 2017-01-25 EP EP17747276.8A patent/EP3413367B1/en active Active
- 2017-02-02 TW TW106103505A patent/TWI726049B/zh active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI888708B (zh) * | 2021-03-10 | 2025-07-01 | 南韓商周星工程股份有限公司 | 太陽能電池及其製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108886099A (zh) | 2018-11-23 |
| EP3413367A4 (en) | 2019-01-30 |
| CN108886099B (zh) | 2022-05-10 |
| EP3413367C0 (en) | 2025-03-26 |
| KR20180105219A (ko) | 2018-09-27 |
| US20190062572A1 (en) | 2019-02-28 |
| EP3413367B1 (en) | 2025-03-26 |
| JPWO2017135117A1 (ja) | 2018-12-06 |
| TWI726049B (zh) | 2021-05-01 |
| JP6988483B2 (ja) | 2022-01-05 |
| WO2017135117A1 (ja) | 2017-08-10 |
| US11028277B2 (en) | 2021-06-08 |
| EP3413367A1 (en) | 2018-12-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI726049B (zh) | 電荷輸送性塗漆 | |
| TWI715657B (zh) | 有機光電變換元件之電洞捕集層用組成物 | |
| JP2022153435A (ja) | 光センサ素子 | |
| US10020449B2 (en) | Composition for anode buffer layer of organic thin film solar cell and organic thin film solar cell | |
| JP7180379B2 (ja) | 有機光電変換素子の正孔捕集層用組成物 | |
| TW201903069A (zh) | 電荷輸送性薄膜之製造方法 |












