TW201835364A - 濺鍍裝置及電極膜之製造方法 - Google Patents

濺鍍裝置及電極膜之製造方法 Download PDF

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Publication number
TW201835364A
TW201835364A TW106144358A TW106144358A TW201835364A TW 201835364 A TW201835364 A TW 201835364A TW 106144358 A TW106144358 A TW 106144358A TW 106144358 A TW106144358 A TW 106144358A TW 201835364 A TW201835364 A TW 201835364A
Authority
TW
Taiwan
Prior art keywords
disposed
cathode
substrate
target
sputtering apparatus
Prior art date
Application number
TW106144358A
Other languages
English (en)
Chinese (zh)
Inventor
阿部大和
竹見崇
青沼大介
熊木智洋
Original Assignee
日商佳能特機股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商佳能特機股份有限公司 filed Critical 日商佳能特機股份有限公司
Publication of TW201835364A publication Critical patent/TW201835364A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW106144358A 2016-12-26 2017-12-18 濺鍍裝置及電極膜之製造方法 TW201835364A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-251502 2016-12-26
JP2016251502A JP6948126B2 (ja) 2016-12-26 2016-12-26 スパッタ装置及び電極膜の製造方法

Publications (1)

Publication Number Publication Date
TW201835364A true TW201835364A (zh) 2018-10-01

Family

ID=62707678

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106144358A TW201835364A (zh) 2016-12-26 2017-12-18 濺鍍裝置及電極膜之製造方法

Country Status (3)

Country Link
JP (1) JP6948126B2 (ja)
TW (1) TW201835364A (ja)
WO (1) WO2018123776A1 (ja)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0681146A (ja) * 1992-09-01 1994-03-22 Nec Corp マグネトロン型スパッタ装置
US5527438A (en) * 1994-12-16 1996-06-18 Applied Materials, Inc. Cylindrical sputtering shield
US20100018857A1 (en) * 2008-07-23 2010-01-28 Seagate Technology Llc Sputter cathode apparatus allowing thick magnetic targets

Also Published As

Publication number Publication date
JP6948126B2 (ja) 2021-10-13
WO2018123776A1 (ja) 2018-07-05
JP2018104758A (ja) 2018-07-05

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