TW201849B - - Google Patents
Download PDFInfo
- Publication number
- TW201849B TW201849B TW81107242A TW81107242A TW201849B TW 201849 B TW201849 B TW 201849B TW 81107242 A TW81107242 A TW 81107242A TW 81107242 A TW81107242 A TW 81107242A TW 201849 B TW201849 B TW 201849B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- gate
- patent application
- item
- procedure
- Prior art date
Links
- 238000000034 method Methods 0.000 claims description 167
- 238000009792 diffusion process Methods 0.000 claims description 93
- 239000000758 substrate Substances 0.000 claims description 68
- 238000000151 deposition Methods 0.000 claims description 63
- 239000002019 doping agent Substances 0.000 claims description 59
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 57
- 229910052710 silicon Inorganic materials 0.000 claims description 53
- 239000010703 silicon Substances 0.000 claims description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 52
- 239000007789 gas Substances 0.000 claims description 50
- 230000008021 deposition Effects 0.000 claims description 46
- 125000004429 atom Chemical group 0.000 claims description 37
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 37
- 239000010931 gold Substances 0.000 claims description 37
- 238000009826 distribution Methods 0.000 claims description 36
- 229910052737 gold Inorganic materials 0.000 claims description 36
- 230000008569 process Effects 0.000 claims description 35
- 238000004519 manufacturing process Methods 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 210000000746 body region Anatomy 0.000 claims description 26
- 238000011049 filling Methods 0.000 claims description 25
- 229910052697 platinum Inorganic materials 0.000 claims description 24
- 150000002500 ions Chemical class 0.000 claims description 23
- 230000010287 polarization Effects 0.000 claims description 23
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 21
- 229910052698 phosphorus Inorganic materials 0.000 claims description 21
- 239000011574 phosphorus Substances 0.000 claims description 21
- 150000003624 transition metals Chemical group 0.000 claims description 21
- 229910000077 silane Inorganic materials 0.000 claims description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 19
- 229910052723 transition metal Inorganic materials 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 16
- 238000005192 partition Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 230000002441 reversible effect Effects 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 14
- 150000004767 nitrides Chemical class 0.000 claims description 14
- 230000000694 effects Effects 0.000 claims description 13
- 230000014759 maintenance of location Effects 0.000 claims description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- 230000002079 cooperative effect Effects 0.000 claims description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000007704 transition Effects 0.000 claims description 11
- 239000006096 absorbing agent Substances 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 10
- 229910021332 silicide Inorganic materials 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 9
- 238000013461 design Methods 0.000 claims description 9
- 230000001965 increasing effect Effects 0.000 claims description 8
- 238000009434 installation Methods 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 210000003625 skull Anatomy 0.000 claims description 7
- 230000001276 controlling effect Effects 0.000 claims description 6
- 230000005496 eutectics Effects 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 230000000295 complement effect Effects 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 230000006798 recombination Effects 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000000969 carrier Substances 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 238000012856 packing Methods 0.000 claims description 4
- 238000005215 recombination Methods 0.000 claims description 4
- 239000005368 silicate glass Substances 0.000 claims description 4
- 238000009825 accumulation Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 3
- 230000018109 developmental process Effects 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 238000010348 incorporation Methods 0.000 claims description 3
- 230000002262 irrigation Effects 0.000 claims description 3
- 238000003973 irrigation Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 230000008929 regeneration Effects 0.000 claims description 3
- 238000011069 regeneration method Methods 0.000 claims description 3
- 239000004576 sand Substances 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 238000013459 approach Methods 0.000 claims description 2
- 230000033228 biological regulation Effects 0.000 claims description 2
- 230000018044 dehydration Effects 0.000 claims description 2
- 238000006297 dehydration reaction Methods 0.000 claims description 2
- -1 hydrogen compound ions Chemical class 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 229910001020 Au alloy Inorganic materials 0.000 claims 2
- 229910008051 Si-OH Inorganic materials 0.000 claims 2
- 229910006358 Si—OH Inorganic materials 0.000 claims 2
- 239000003353 gold alloy Substances 0.000 claims 2
- 229910052720 vanadium Inorganic materials 0.000 claims 2
- 102000040350 B family Human genes 0.000 claims 1
- 108091072128 B family Proteins 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 235000013361 beverage Nutrition 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 230000002708 enhancing effect Effects 0.000 claims 1
- 238000001764 infiltration Methods 0.000 claims 1
- 230000008595 infiltration Effects 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000004886 process control Methods 0.000 claims 1
- 230000002787 reinforcement Effects 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 229910021350 transition metal silicide Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 223
- 239000010408 film Substances 0.000 description 55
- 108091006146 Channels Proteins 0.000 description 21
- 238000005530 etching Methods 0.000 description 16
- 239000004744 fabric Substances 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- 229920005591 polysilicon Polymers 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 13
- 230000002829 reductive effect Effects 0.000 description 13
- 230000008016 vaporization Effects 0.000 description 13
- 238000009834 vaporization Methods 0.000 description 12
- 239000013078 crystal Substances 0.000 description 11
- 238000000926 separation method Methods 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 10
- 238000002309 gasification Methods 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000036961 partial effect Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 229910021339 platinum silicide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 241001354791 Baliga Species 0.000 description 1
- 241000255789 Bombyx mori Species 0.000 description 1
- 241000287828 Gallus gallus Species 0.000 description 1
- 101100518501 Mus musculus Spp1 gene Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- VMXJCRHCUWKQCB-UHFFFAOYSA-N NPNP Chemical group NPNP VMXJCRHCUWKQCB-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 241000269821 Scombridae Species 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 229910001361 White metal Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 235000012907 honey Nutrition 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 235000020640 mackerel Nutrition 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000010412 perfusion Effects 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical group [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000002381 testicular Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910001428 transition metal ion Inorganic materials 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000010969 white metal Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/852,932 US5262336A (en) | 1986-03-21 | 1992-03-13 | IGBT process to produce platinum lifetime control |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201849B true TW201849B (fr) | 1993-03-11 |
Family
ID=51356588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW81107242A TW201849B (fr) | 1992-03-13 | 1992-09-15 |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW201849B (fr) |
-
1992
- 1992-09-15 TW TW81107242A patent/TW201849B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5262336A (en) | IGBT process to produce platinum lifetime control | |
| US5528058A (en) | IGBT device with platinum lifetime control and reduced gaw | |
| TWI445161B (zh) | 半導體裝置及其製備方法 | |
| CN104183645B (zh) | 垂直沟道式结型SiC功率FET及其制造方法 | |
| CN105185829B (zh) | 功率晶体管及其制备方法 | |
| US20130037853A1 (en) | Semiconductor device | |
| CN103887331B (zh) | 高压igbt器件的vld终端及其制备方法 | |
| US5283202A (en) | IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions | |
| CN103035691A (zh) | 逆导型igbt半导体器件及其制造方法 | |
| US7825492B2 (en) | Isolated vertical power device structure with both N-doped and P-doped trenches | |
| US12237410B1 (en) | Trench gate silicon carbide MOSFET device and fabrication method thereof | |
| CN109659351A (zh) | 绝缘栅双极晶体管 | |
| CN111029408A (zh) | 一种集成esd的vdmos器件及制备方法 | |
| CN105336779B (zh) | Ldmos器件及其形成方法 | |
| CN109309008A (zh) | 一种功率器件及其制作方法 | |
| CN105762182B (zh) | 具有高抗闩锁能力的igbt器件 | |
| CN114068721A (zh) | 双梯形槽保护梯形槽碳化硅mosfet器件及制造方法 | |
| CN109148591A (zh) | 一种集成肖特基二极管的碳化硅槽栅mos器件 | |
| CN107039243B (zh) | 超结器件及其制造方法 | |
| CN103199018A (zh) | 场阻断型半导体器件的制造方法和器件结构 | |
| TW201849B (fr) | ||
| CN109037195A (zh) | 半导体结构及其形成方法 | |
| JPH0766395A (ja) | 絶縁ゲート制御半導体装置とその製造方法 | |
| US10211326B2 (en) | Vertical power component | |
| CN109148557A (zh) | 超结器件及其制造方法 |