TW201849B - - Google Patents

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Publication number
TW201849B
TW201849B TW81107242A TW81107242A TW201849B TW 201849 B TW201849 B TW 201849B TW 81107242 A TW81107242 A TW 81107242A TW 81107242 A TW81107242 A TW 81107242A TW 201849 B TW201849 B TW 201849B
Authority
TW
Taiwan
Prior art keywords
layer
gate
patent application
item
procedure
Prior art date
Application number
TW81107242A
Other languages
English (en)
Chinese (zh)
Original Assignee
Advanced Power Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/852,932 external-priority patent/US5262336A/en
Application filed by Advanced Power Technology filed Critical Advanced Power Technology
Application granted granted Critical
Publication of TW201849B publication Critical patent/TW201849B/zh

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  • Electrodes Of Semiconductors (AREA)
TW81107242A 1992-03-13 1992-09-15 TW201849B (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/852,932 US5262336A (en) 1986-03-21 1992-03-13 IGBT process to produce platinum lifetime control

Publications (1)

Publication Number Publication Date
TW201849B true TW201849B (fr) 1993-03-11

Family

ID=51356588

Family Applications (1)

Application Number Title Priority Date Filing Date
TW81107242A TW201849B (fr) 1992-03-13 1992-09-15

Country Status (1)

Country Link
TW (1) TW201849B (fr)

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