TW201911430A - Production method for semiconductor device, and laminate sheet - Google Patents

Abstract

A method for manufacturing a semiconductor device, comprising: an electronic component mounting step; placing an electronic component 2 on a laminated plate 1 having an adhesive plate 12 and a hardenable first resin composition layer 11; and a laminating step, A sealing sheet having a curable second resin composition layer 3 is laminated; a curing step is performed to obtain a first cured layer 11 ′ having a cured first resin composition layer 11 and a second resin composition layer 3 cured. A second hardened layer 3 ′ and a sealed body 4 obtained by peeling the adhesive sheet 12 at the same time as the electronic component 2 sealed by the first hardened layer 11 ′ and the second hardened layer 3 ′; a hole forming step Forming a hole 5; a step of removing the slag, and a step of removing the sealing body 4 from the slag; and an electrode forming step of forming the electrode 6. This method for manufacturing a semiconductor device can be used for high integration and high performance of a semiconductor device, and can also be applied to a method with high efficiency and high yield.

Description

Manufacturing method of semiconductor device and laminated plate

The present invention relates to a method for manufacturing a semiconductor device including a sealed electronic component, and a laminated plate that can be used in the manufacturing method.

Conventionally, in a method of manufacturing a semiconductor device, a sealing plate provided with a sealing material formed in a plate shape is used to seal an electronic component such as a semiconductor wafer to manufacture a semiconductor package.

For example, Patent Document 1 discloses a method of placing a semiconductor wafer on a semiconductor wafer as a support, and then sealing the semiconductor wafer with a sealing plate. Further, Patent Document 2 discloses a method of placing a semiconductor wafer on a printed circuit board, and then sealing the semiconductor wafer with a sheet-like resin composition. Wiring is provided in advance on the semiconductor wafer or the wiring circuit board, and when the semiconductor wafer is mounted, it is placed on the semiconductor wafer or the wiring circuit board so that the extraction electrode existing in the semiconductor wafer is electrically connected to the wiring. on. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Application Publication No. 2016-96308 [Patent Document 2] Japanese Patent No. 5042297

[Problems to be Solved by the Invention]

In recent years, in response to the demand for higher integration and higher performance of semiconductor devices, for example, development of a substrate (a wafer-embedded substrate) having a semiconductor wafer built therein has been performed. However, the semiconductor packages obtained by the methods disclosed in Patent Literature 1 and Patent Literature 2 cannot sufficiently meet the requirements for higher integration and higher performance of semiconductor devices.

In addition, in recent years, the development of fan-out wafer-level package (FOWLP), fan-out panel-level package (FOPLP), etc. have also been carried out. In such a package manufacturing method, a plurality of semiconductor wafers are sealed together with a sealing plate and then divided at predetermined positions to obtain a plurality of semiconductor packages. Thereby, a semiconductor package can be produced with high efficiency and a high yield. Therefore, there is also a demand for developing a sealing plate suitable for a manufacturing method of such a package.

The present invention has been made in view of such a practical situation, so as to provide a method for manufacturing a semiconductor device, which can perform high integration and high performance of the semiconductor device, and can also be used in a method of high efficiency and high yield, and Provided is a laminated sheet that can be used in the manufacturing method. [Means for solving problems]

In order to achieve the above-mentioned object, first, the present invention provides a method for manufacturing a semiconductor device, comprising: a step of mounting an electronic component; and adhering to an adhesive layer including a substrate and an adhesive layer laminated on one side of the substrate. A sheet is placed on the surface of the first resin composition layer side of the laminated sheet with the curable first resin composition layer laminated on the surface of the adhesive layer side of the adhesive sheet, or Two or more electronic parts; a lamination step of laminating the second resin composition of the sealing plate having at least a hardenable second resin composition layer so as to cover at least the electronic parts and contact the first resin composition at the same time Physical layer; a hardening step, including a first hardened layer obtained by hardening the first resin composition layer, a second hardened layer obtained by hardening the second resin composition layer, and the first hardened layer and the above A sealed body obtained by peeling the adhesive sheet while sealing the electronic component with the second hardened layer; a hole forming step, forming a hole exposing a part of the surface of the electronic component, A hole penetrating through at least one of the first hardened layer and the second hardened layer; a slag removing step, the slag removing treatment of the sealing body forming the hole; and an electrode forming step to form the electrons passing through the holes. Electrodes for electrical connection of parts (Invention 1).

With regard to the method for manufacturing a semiconductor device according to the above invention (Invention 1), by including the above steps, the steps up to the electrode formation can be efficiently performed with extremely simple operation contents. In addition, since a hole is formed in at least one of the first hardened layer and the second hardened layer, and an electrode is provided in the hole, an electrode can be formed on a desired side of the semiconductor package, particularly on both sides. The three-dimensional packaging of the package is also facilitated. As a result, it is possible to increase the integration and function of the semiconductor device. In addition, the above-mentioned manufacturing method can also be applied to the manufacturing of FOWLP, FOPLP, and a component-embedded substrate. In particular, the above-mentioned manufacturing method can seal a plurality of electronic parts at a time, so it can also be applied to the manufacture of a so-called panel-level package. seal.

In the above-mentioned invention (Invention 1), it is preferable that the curing of the first resin composition layer and the curing of the second resin composition layer be performed simultaneously, the peeling of the adhesive sheet, and the first resin composition layer. And it hardened | cured after the said 2nd resin composition layer (invention 2).

In the above inventions (Inventions 1, 2), it is preferable that at least one of the first hardened layer and the second hardened layer exhibits insulation (Invention 3).

In the invention (Inventions 1 to 3), at least one of the first resin composition layer and the second resin composition layer is cured by heat treatment (Invention 4).

In the said invention (invention 4), it is preferable that the said heat processing is performed stepwise by several heat processing (invention 5).

In the above-mentioned invention (Invention 5), it is preferable that the above-mentioned heat treatment is performed by a first heat treatment that is thermally cured at a temperature T1 and a second heat treatment that is thermally cured at a temperature T2 higher than the temperature T1 (Invention 6) .

In the above inventions (Inventions 1 to 6), it is preferable that the curing of the first resin composition layer is performed so that the reaction rate of the first cured layer is 85% or more (Invention 7).

In the above inventions (Inventions 1 to 7), it is preferred that the curing of the second resin composition layer is performed so that the reaction rate of the second cured layer is 85% or more (Invention 8).

In the above inventions (Inventions 1 to 8), it is preferable that at least one of the first resin composition layer and the second resin composition layer is formed of a resin composition containing a thermosetting resin (Invention 9).

In the said invention (invention 9), it is preferable that the said resin composition contains an inorganic filler (invention 10).

In the above invention (Invention 10), it is preferable that the above-mentioned inorganic filler is subjected to surface treatment with a surface treatment agent having a minimum coating area of less than 550 m ² / g (Invention 11).

In the above inventions (Inventions 9 to 11), it is preferable that the first resin composition layer and the second resin composition layer are formed of the resin composition having the same composition (Invention 12).

In the above invention (Inventions 1 to 12), the thickness of the first resin composition layer is preferably 1 μm or more and 100 μm or less (Invention 13).

In the above invention (Inventions 1 to 13), the thickness of the second resin composition layer is preferably 50 μm or more and 1000 μm or less (Invention 14).

Secondly, the present invention provides a laminated plate which can be used in the above-mentioned method for manufacturing a semiconductor device (Inventions 1 to 14), and includes a substrate including a substrate and an adhesive layer laminated on one side of the substrate. The sheet and the first curable first resin composition layer laminated on the adhesive layer side of the adhesive sheet (invention 15). [Effect of the invention]

The method for manufacturing a semiconductor device of the present invention can be used for high integration and high performance of a semiconductor device, and can also be applied to a method with high efficiency and high yield. Moreover, the laminated sheet of this invention can be used for this manufacturing method.

Embodiments of the present invention will be described below. A method for manufacturing a semiconductor device according to an embodiment of the present invention includes the step of placing an electronic component on an adhesive sheet including a substrate and an adhesive layer laminated on one surface side of the substrate, and laminated on the substrate. One or two or more electronic components are placed on the first resin composition layer-side surface of the laminated sheet of the hardened first resin composition layer on the surface of the adhesive layer side of the adhesive sheet; The laminating step includes laminating the second resin composition layer of the sealing plate having at least a hardenable second resin composition layer so as to cover at least the electronic component while contacting the first resin composition; the hardening step obtains The first hardened layer formed by curing the first resin composition layer, the second hardened layer formed by hardening the second resin composition layer, and the first sealed layer sealed by the first hardened layer and the second hardened layer are provided. The electronic component is a sealed body obtained by peeling the adhesive sheet at the same time; the hole forming step forms a hole exposing a part of the surface of the electronic component, which penetrates the first hardened layer and the top A hole of at least one of the second hardened layer; a desmearing step of desmearing the sealing body forming the hole; and an electrode forming step of forming a hole electrically connected to the electronic component through the hole. electrode.

[Laminated Sheet] First, a laminated sheet that can be used in the method for manufacturing a semiconductor device according to this embodiment will be described. The laminated sheet includes, as described above, an adhesive sheet including a base material and an adhesive layer laminated on one surface side of the base material, and hardenability laminated on the surface of the adhesive layer side of the adhesive sheet. The first resin composition layer.

1. Adhesive sheet (1) Substrate The material of the substrate is not particularly limited as long as it can support the adhesive layer, the first resin composition layer, and the like laminated on the substrate. In particular, it is preferable that the base material has heat resistance that can withstand heating when the first resin composition layer and the second resin composition layer are thermally cured. Examples of the material include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, and polymers such as polyethylene and polypropylene. Olefin film, cellophane, cellulose diacetate film, cellulose triacetate film, cellulose acetate butyrate film, polyvinyl chloride film, polyvinylidene chloride film, polyvinyl alcohol film, ethylene-acetic acid-ethylene copolymer film, Polystyrene film, polycarbonate film, polymethylpentene film, polyfluorene film, polyetheretherketone film, polyetherfluorene film, polyetherfluorine film, polyfluorene resin film, fluororesin film, polymer film Pinamine film, acrylic resin film, norbornene resin film, cycloolefin resin film, polyphenylene sulfide compound film, liquid crystal polymer film, etc. These films may be a single layer or a film formed by laminating multiple layers of the same or different kinds. Among the above, at least one of a polyester film and a polyimide film is preferable in terms of heat resistance in a temperature range of a heat treatment to be described later, and a polyester film is preferable in terms of versatility. Polyethylene terephthalate film is more preferred.

The substrate may be used to improve the adhesion with the adhesive layer directly laminated on the substrate, and may also be subjected to a surface treatment such as an oxidation method, a bumping method, or a primer treatment. Examples of the oxidation method include, for example, a corona discharge treatment, a plasma discharge treatment, a chromium oxidation treatment (wet), a flame treatment, a hot air treatment, ozone, and an ultraviolet irradiation treatment. In addition, the unevenness method includes, for example, , Sand blasting method, spray treatment method, etc. These surface treatment methods can be appropriately selected according to the type of the substrate.

The thickness of the substrate can be appropriately set from the viewpoints of workability, cost, and the like. For example, it is preferably 10 μm or more, particularly 15 μm or more, and further preferably 20 μm or more. The thickness of the substrate is preferably 500 μm or less, particularly 300 μm or less, and further preferably 100 μm or less.

(2) Adhesive layer As long as the adhesive layer can exhibit sufficient adhesion to the first resin composition, it can be well cured from the first resin composition layer or the first hardened first resin composition layer. There are no particular restrictions on the adhesive sheet that is peeled off from the layer and the adhesive constituting the adhesive layer. In particular, it is preferable that the pressure-sensitive adhesive layer has heat resistance that can withstand heating when the first resin composition layer or the second resin composition layer is thermally cured. The adhesive constituting the adhesive layer preferably has desired adhesive force and re-peelability, and can be used, for example, acrylic adhesive, silicone adhesive, rubber adhesive, urethane adhesive. Agents, polyester-based adhesives, polyvinyl ether-based adhesives, etc. Among these, an acrylic-based adhesive or a silicone-based adhesive is preferably used. These adhesives may also contain plasticizers, stabilizers, adhesion-imparting materials, colorants, coupling agents, antistatic agents, antioxidants, and the like. In addition, the adhesive layer may be composed of a non-energy-ray-curable adhesive or an energy-ray-curable adhesive.

The thickness of the adhesive layer can be appropriately set from the viewpoints of adhesion, workability, cost, and the like. For example, it is preferably 1 μm or more, particularly 5 μm or more, and further preferably 10 μm or more. The thickness of the adhesive layer is preferably 500 μm or less, particularly preferably 100 μm or less, and further preferably 50 μm or less.

The storage elastic modulus of the adhesive layer at 100 ° C. and a measurement frequency of 1 Hz is preferably 1 × 10 ⁵ Pa or more. If the adhesive layer has such a storage elastic modulus, after the first resin composition is cured to form the first cured layer, the adhesive sheet can be easily peeled from the first cured layer, and the adhesive can be prevented from remaining on the substrate. Anomalies on the surface of the body (so-called glue residue). The upper limit of the storage elastic modulus of the adhesive layer at 100 ° C. and a measurement frequency of 1 Hz is not particularly limited, but is preferably 1 × 10 ⁷ Pa or less. In addition, the storage elastic modulus is a value measured by a torsional shear method using a dynamic viscoelasticity measuring device, and details of the measuring method are as described in Examples described later.

The adhesive sheet preferably exhibits the following adhesive force after heating. First, the adhesive surface of the adhesive sheet 1 is adhered to an adherend (copper foil or polyimide film), and heated at 100 ° C and 30 minutes, and then heated at 180 ° C and 30 minutes, and further After heating at 190 ° C for 1 hour, the adhesion to copper foil at room temperature and the adhesion to polyimide film at room temperature are 0.7N / 25mm or more and 2.0N / 25mm or less, respectively. good. When the adhesive force after such heating is within the above range, peeling of the adhesive sheet can be effectively prevented in the middle of the curing step. In addition, when the first resin composition layer to be described later is cured at a stage between the first laminating step and the peeling step of the adhesive sheet 1, the adhesive sheet can be easily peeled even if the adhesive sheet is heated. It should be noted that the details of the method for measuring the adhesive force are as described in Examples described later. In addition, in this specification, a room temperature means the temperature of 22 degreeC or more and 24 degreeC or less.

When the adhesive layer is peeled after the adhesive sheet is heated, from the viewpoint of effectively suppressing the adhesive residue caused by the deterioration of the adhesive layer, a weight reduction temperature of 5% is preferred, preferably 250 ° C or higher, and 300 ° C. The above is better. The 5% weight reduction temperature can be adjusted, for example, by increasing the bridging degree of the adhesive used for the adhesive layer, reducing the content of low molecules in the adhesive, and the like. The details of the measurement method of the 5% weight reduction temperature are as described in the examples described later.

2. First resin composition layer The first resin composition layer is not particularly limited as long as it has curability. Here, the term "the first resin composition layer has curability" means that the first resin composition layer can be cured. The first resin composition layer may be thermosetting or energy ray-curable, but is preferably thermosetting. Since the first resin composition layer is thermosetting, even when it is difficult to irradiate the laminated first resin composition layer with energy rays, the first resin composition layer can be hardened well by heating it. The first resin composition layer preferably has tackiness on a surface on the side opposite to the adhesive layer. By making the first resin composition layer tacky, the electronic component can be suppressed between the time when the electronic component is placed on the first resin composition layer and the time when the second resin composition layer is laminated on the lamination step in the electronic component placement step. Offset from a given position.

The first resin composition layer is preferably formed of a resin composition containing a thermosetting resin. By containing a thermosetting resin in a resin composition, the 1st resin composition layer formed becomes easy to have desired curability. The cured layer obtained by curing the first resin composition layer preferably exhibits insulation properties. By making the first hardened layer exhibit insulating properties, abnormalities such as short circuits can be suppressed in the obtained semiconductor device, and excellent performance can be obtained.

(1) Thermosetting resin When the resin composition contains a thermosetting resin, when the electronic component is sealed using the obtained first resin composition layer, the electronic component can be easily and firmly sealed. The thermosetting resin is not particularly limited as long as it can harden the first resin composition layer, and for example, a resin usually contained in a sealing material can be used. Specific examples include epoxy resins, phenol resins, naphthol-based resins, active ester-based resins, benzoxazine-based resins, and cyanate-based resins. These may be used alone or in combination of two. Used above.

The epoxy resin described above generally has the property of forming a three-dimensional network into a hardened hardened material when heated. As such an epoxy resin, various conventional epoxy resins can be used. Specific examples thereof include glycidyl ethers of phenols such as bisphenol A, bisphenol F, resorcinol, phenol novolac, and cresol novolac; butanediol , Glycidyl ethers of alcohols such as polyethylene glycol, polypropylene glycol, etc .; glycidyl ethers of carboxylic acids such as phthalic acid, isophthalic acid, tetrahydrophthalic acid, etc .; will be bonded to aniline isocyanuric acid Glycidyl or alkyl glycidyl epoxy resins in which the active hydrogen of the nitrogen atom of the acid ester is substituted with glycidyl group; vinyl cyclohexane diepoxide, 3,4-epoxy cyclohexylmethyl-3 , 4-dicyclohexanecarboxylic acid ester, 2- (3,4-epoxy) cyclohexyl-5,5-spirocyclo (3,4-epoxy) cyclohexane-m-dioxane, etc. For example, a so-called alicyclic epoxy compound that introduces an epoxy group by oxidizing a carbon-carbon double bond in a molecule. Alternatively, an epoxy resin having a biphenyl skeleton, a triphenylmethane skeleton, a dicyclohexadiene skeleton, a naphthalene skeleton, or the like may be used. These epoxy resins can be used individually by 1 type or in combination of 2 or more types. Among the above-mentioned epoxy resins, glycidyl ether (bisphenol A type epoxy resin) having bisphenol A, epoxy resin having biphenyl skeleton (biphenyl type epoxy resin), and naphthalene skeleton are preferably used. Epoxy resin (naphthalene type epoxy resin) or a combination of these.

Examples of the phenol resin include bisphenol A, tetramethyl bisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, and triphenylmethane. Type phenols, tetraphenols, phenolic phenols, cresol novolac resins, phenols having a biphenylaralkyl skeleton (biphenyl phenols), etc., among these, biphenyl phenols are preferably used. These phenol resins can be used alone or in combination of two or more. When an epoxy resin is used as the curable resin, a phenol resin is preferably used in combination from the viewpoint of reactivity with the epoxy resin and the like.

The content of the thermosetting resin in the resin composition is preferably 10% by mass or more, particularly 15% by mass or more, and further preferably 20% by mass or more. The content is preferably 60% by mass or less, particularly preferably 50% by mass or less, and further preferably 40% by mass or less. By setting the content to be 10% by mass or more, the first resin composition layer can be sufficiently cured, and the electronic component can be sealed more firmly. In addition, by setting the content to 60% by mass or less, curing of the first resin composition layer at an unintended stage can be further suppressed, and storage stability can be further improved. The content of the thermosetting resin is a solid content conversion value.

(2) Thermoplastic resin In addition, the resin composition may contain a thermoplastic resin. By making the said resin composition contain a thermoplastic resin, it is easy to form a 1st resin composition layer into a sheet shape, and workability can be improved. In addition, the low-stress property of the first cured layer obtained by curing the first resin composition layer can be effectively obtained. Moreover, it becomes easy to provide the said tackiness to a 1st resin composition layer. Therefore, the thermoplastic resin is not particularly limited as long as it can form the first resin composition layer into a sheet shape, and for example, a resin usually contained in a sealing material can be used. Examples of the thermoplastic resin include a phenoxy resin, an olefin resin, a polyester resin, a polyurethane resin, a polyester urethane resin, an acrylic resin, a fluorene resin, and styrene-isobutylene. -Styrenic resin, silane resin, rubber resin, polyvinyl acetal resin, polyvinyl butyral resin, polyimide resin, polyimide resin, etc. Amine-based resin, polyether fluorene-based resin, polyfluorene-based resin, fluorine-based resin, etc. These can be used alone or in combination of two or more. From the viewpoint of electrode formability, it is preferable to use at least one kind of thermoplastic resin selected from the group consisting of a phenoxy-based resin, a polyvinyl acetal resin, and a polyvinyl butyral resin.

The phenoxy resin is not particularly limited, and examples thereof include, for example, bisphenol A type, bisphenol F type, bisphenol A / bisphenol F copolymerization type, bisphenol S type, bisphenol acetophenone type, Phenolic, fluorene, dicyclopentadiene, norbornene, naphthalene, anthracene, adamantane, terpene, trimethylcyclohexane, biphenol, biphenyl Among them, phenoxy resins and the like are preferably used among them. The terminal of the phenoxy resin may be any functional group such as a phenolic hydroxyl group or an epoxy group. A phenoxy-based resin may be used individually by 1 type, and may use 2 or more types together.

The content of the thermoplastic resin in the resin composition is preferably 1% by mass or more, particularly preferably 3% by mass or more, and further preferably 5% by mass or more. The content is preferably 30% by mass or less, particularly 20% by mass or less, and further preferably 10% by mass or less. When the content is in the above range, the first resin composition layer can be more easily formed into a sheet shape, and the first resin composition layer can easily exhibit good adhesiveness. The above-mentioned content of the thermoplastic resin is a solid content conversion value.

(3) Inorganic filler In addition, the resin composition may contain an inorganic filler. When the resin composition contains an inorganic filler, the cured layer formed by curing the first resin composition layer can have excellent mechanical strength, and the reliability of the obtained semiconductor device can be improved. Examples of the inorganic filler include, for example, silicon dioxide, aluminum oxide, glass, titanium oxide, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, and magnesium oxide. , Alumina, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silicon dioxide, amorphous silicon dioxide, mullite, cordierite, etc. , Montmorillonite, bentonite, boehmite, talc, iron oxide, silicon carbide, zirconia, etc. as fillers of materials, these can be used alone or in combination of two or more. Among these, it is preferable to use a silica filler and an alumina filler, and it is especially preferable to use a silica filler.

The inorganic filler is preferably surface-treated with a surface-treating agent having a predetermined minimum coating area. Thereby, the dispersibility and filling properties of the inorganic filler in the resin composition can be made more excellent, and at the same time, the effects described below can be obtained depending on the surface treatment agent used.

When the plating film is formed on the surface of the first hardened layer obtained by curing the first resin composition layer, it is preferable that the minimum surface area of the surface treatment agent is less than 550 m ² from the viewpoint of suppressing the expansion of the plating film. g of surface treatment agent.

The inorganic filler that is surface-treated with a surface treatment agent having a minimum coating area of less than 550 m ² / g has a higher affinity with a treatment solution such as an alkaline solution used in the desizing step, and the hardened layer is exposed to In this processing solution, the inorganic filler is easily separated from the first hardened layer. Therefore, after the dross removing step, when the metal is plated in the electrode forming step, the metal penetrates into the part where the inorganic filler of the hardened layer is detached, exhibits an anchoring effect, and makes the coated film firmly adhere to the hardened layer. As a result, air does not easily enter the interface between the first hardened layer and the plating film, and even if heat is generated in subsequent manufacturing steps or when the obtained semiconductor device is used, it is possible to suppress the plating film from bubbling due to air expansion.

From the viewpoint of more effectively suppressing occurrence of blistering of the coating, the minimum area of the surface treatment agent is coated to 520m ² / g or less preferably, in particular in 450m ² / g or less is preferable. On the other hand, the lower limit value of the minimum coating area of the surface treatment agent is preferably 100 m ² / g or more, particularly preferably 200 m ² / g or more, and more preferably 300 m ² / g or more. When the minimum coating area is 100 m ² / g or more, the dispersibility and filling properties of the inorganic filler in the resin composition can be made more excellent.

The minimum coating area (m ² / g) of the surface treatment agent refers to the area (m ² ) of the monomolecular film when a monomolecular film is formed using 1 g of the surface treatment agent. The minimum coating area can be theoretically calculated from the structure of the surface treatment agent. For example, when a surface treatment agent having a trialkoxysilyl group as a reactive group is considered, Si (O) produced by hydrolysis of the trialkoxysilane group is considered. ₃ configuration, is a three Si atoms and O atoms, respectively, present as tetrahedral vertices. Here, assume that the Si atom is a sphere with a radius of 2.10Å, the O atom is a sphere with a radius of 1.52Å, the distance between the Si-O bonds is 1.51Å, and the angle formed by the two Si-O bonded edges is 109.5 °. Then, assuming that all three O atoms in the tetrahedron react with the hydroxyl groups on the surface of the inorganic filler, the minimum circular area that can be covered by the three O atoms is calculated. The surface treatment agent is equivalent to 1.33 × 10 ^-19 m per molecule. ² / Molecule. When this is converted into 1 mole equivalent, it is 8.01 × 10 ⁴ m ² / mol. By dividing the area per 1 mole equivalent by the molecular weight of the surface treatment agent, the minimum value of the surface treatment agent can be obtained. Covered area (m ² / g).

Preferred examples of the surface treatment agent having a minimum coating area of less than 550 m ² / g include epoxy silane and vinyl silane. These can be used alone or in combination.

Specific examples of the epoxy silane include, for example, 3-glycidyloxypropyltriethoxysilane, 3-glycidyloxypropyltrimethoxysilane, and 3-glycidyloxypropylmethyldimethyl Oxysilane, 3-glycidyloxypropylmethyldiethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane and the like. Among these, it is preferable to use 3-glycidyloxypropyltrimethoxysilane from the viewpoint of effectively promoting the removal of the inorganic filler.

Specific examples of the above-mentioned vinyl silane include, for example, vinyl triethylfluorenyl silane, vinyl trimethoxy silane, vinyl triethoxy silane, vinyl trichlorosilane, and vinyl tri (2-methyl) Ethoxyethoxy) silane and the like. Among these, vinyl trimethoxysilane is preferably used from the viewpoint of effectively promoting the removal of the inorganic filler.

The shape of the inorganic filler may be any of granular, needle-like, plate-like, and irregular shapes. However, when the inorganic filler is an inorganic filler that is surface-treated with the surface treatment agent described above, the inorganic filler is effectively processed. From the viewpoint of surface treatment, a spherical shape is preferred.

The average particle diameter of the inorganic filler is preferably 0.01 μm or more, particularly preferably 0.1 μm or more, and further preferably 0.3 μm or more. The average particle diameter of the inorganic filler is preferably 3.0 μm or less, and particularly preferably 1.0 μm or less. When the inorganic filler is an inorganic filler that is surface-treated with the above-mentioned surface treatment agent, if the average particle diameter of the inorganic filler is 0.01 μm or more, it becomes a surface area that can be easily surface-treated with the surface treatment agent, which is effective. Surface treatment. On the other hand, when the average particle diameter of the inorganic filler is 3.0 μm or less, the inorganic filler can be satisfactorily filled in the first hardened layer, and the first hardened layer can have better mechanical strength. In particular, when the inorganic filler is an inorganic filler that is surface-treated with the surface treatment agent described above, the inorganic filler becomes easy to perform surface treatment with the surface treatment agent by setting the average particle diameter to 3.0 μm or less. The surface area can be effectively surface treated. In addition, the average particle diameter of the inorganic filler in this specification is a value measured by a dynamic light scattering method using a particle size distribution measuring device (manufactured by Nikkiso Co., Ltd., product name "Nanotrac Wave-UT151").

The maximum particle diameter of the inorganic filler is preferably 0.05 μm or more, and particularly preferably 0.5 μm or more. The maximum particle diameter is preferably 5 μm or less, and particularly preferably 3 μm or less. By making the maximum particle diameter of the inorganic filler into the above range, it is easy to fill the inorganic filler into the first hardened layer, so that the first hardened layer has more excellent mechanical strength. The average particle diameter of the inorganic filler in the present specification is a value measured by a dynamic light scattering method using a particle size distribution measuring device (product name "Nanotrac Wave-UT151" manufactured by Nikkiso Co., Ltd.).

The content of the inorganic filler in the resin composition is preferably 40% by mass or more, and particularly preferably 50% by mass or more. When the content is 40% by mass or more, the first hardened layer can easily have both mechanical strength and the effect of surface treatment with the surface treatment agent. The content of the inorganic filler in the resin composition is preferably 90% by mass or less, particularly 85% by mass or less, and further preferably 80% by mass or less. When the content of the inorganic filler surface-treated by the surface-treating agent is 90% by mass or less, the first resin composition layer can have better mechanical strength. In addition, the said content of an inorganic filler is a solid content conversion value.

(4) Hardening catalyst It is preferable that the resin composition further contains a hardening catalyst. Thereby, the hardening reaction of a thermosetting resin can be performed efficiently, and a resin composition layer can be hardened favorably. Examples of the curing catalyst include imidazole-based curing catalysts, amine-based curing catalysts, and phosphorus-based curing catalysts.

Specific examples of the imidazole-based curing catalyst include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-ethyl-4-methylimidazole, and 1-benzyl 2-methylimidazole, 2-phenylimidazole, 2-phenyl 4-methylimidazole, 1-benzyl-2-phenylimidazole, 1,2-dimethylimidazole, 1-cyanoethyl- 2-methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenyl Imidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4,5-bis (hydroxymethyl) imidazole, etc., from the viewpoint of reactivity, 2-ethyl Phenyl-4-methylimidazole is preferred.

Specific examples of the amine-based hardening catalyst include triazine such as 2,4-diamino-6- [2'-methylimidazolyl- (1 ')] ethyl-s-triazine, and the like. Compounds, tertiary amines such as 1,8-diazabicyclo [5,4,0] undec-7-ene (DBU), triethylenediamine, benzyldimethylamine, triethanolamine Compound. Among them, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')] ethyl-s-triazine is preferred.

Specific examples of the phosphorus-based curing catalyst include triphenylphosphine, tributylphosphine, tris (p-methylphenyl) phosphine, and tris (nonylphenyl) phosphine.

The hardening catalyst may be used alone or in combination of two or more.

The content of the curing catalyst in the resin composition is preferably 0.01% by mass or more, particularly preferably 0.05% by mass or more, and further preferably 0.1% by mass or more. The content is preferably 2.0% by mass or less, particularly 1.5% by mass or less, and further preferably 1.0% by mass or less. By making this content into the said range, a resin composition layer can be hardened more favorably. The above-mentioned content of the catalyst hardening is a solid content conversion value.

(5) Other components The resin composition may further include a plasticizer, a stabilizer, an adhesion-imparting material, a coloring agent, a coupling agent, an antistatic agent, an antioxidant, and the like.

(6) Physical properties of the first resin composition layer The material constituting the first resin composition layer has a melt viscosity at 90 ° C (hereinafter, sometimes referred to as "90 ° C melt viscosity") before curing, and the upper limit is It is preferably 1.0 × 10 ⁵ Pa · s or less, and particularly preferably 1.0 × 10 ⁴ Pa · s or less. If the upper limit of the melt viscosity at 90 ° C. is as described above, the electronic component can be well embedded in the first resin composition layer under heating, thereby effectively suppressing the occurrence of voids around the electrical component. In addition, the lower limit of the melt viscosity at 90 ° C is preferably 1.0 Pa · s or more, and particularly preferably 10 Pa · s or more. If the lower limit of the melt viscosity at 90 ° C is as described above, when the second resin composition is laminated on the electronic component under heating in the lamination step, the material constituting the first resin composition layer does not flow excessively. Prevents contamination of the device or shift of the wafer.

Here, the 90 ° C melt viscosity in this specification is measured using a viscoelasticity measuring device. Specifically, the melt viscosity can be measured on a resin composition layer having a thickness of 15 mm using MCR302 (manufactured by Anton Parl) at a temperature range of 30 to 150 ° C and a temperature increase rate of 5 ° C / min.

(7) Thickness of the first resin composition layer The thickness of the first resin composition layer can be set in consideration of the application of sealing, the thickness of the cured first resin composition layer after sealing, and the like. For example, it is preferably 1 μm or more. In particular, it is preferably 5 μm or more, and more preferably 10 μm or more. The thickness of the first resin composition layer is preferably 300 μm or less, and particularly preferably 200 μm or less. When the thickness of the first resin composition layer is 1 μm or more, the effect of protecting the electronic component by the first hardened layer formed by hardening the first resin composition layer can be obtained, and good insulation can be obtained. In addition, by setting the thickness of the first resin composition layer to 300 μm or less, it is possible to reduce the occurrence of curing shrinkage of the first hardened layer formed by curing the first resin composition layer, thereby suppressing warping of the sealing body.

3. Release sheet The above laminated sheet may be provided with a release sheet. That is, the sheet can be peeled off at the area layer side of the first resin composition layer of the laminated sheet. By providing a release sheet, it is excellent in operability at the time of storage of a laminated sheet, etc. The configuration of the release sheet is arbitrary, and examples thereof include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, polypropylene, Plastic films such as polyolefin films such as polyethylene. It is preferable to apply a peeling treatment to such a peeling surface. Examples of the release agent used for the release treatment include silicone-based, alkyd-based, fluorine-based, and long-chain alkyl-based release agents.

The thickness of the release sheet is not particularly limited, but is usually 20 μm or more and 250 μm or less.

4. Manufacturing method of laminated sheet The laminated sheet of this embodiment can be manufactured, for example, as follows: separately produced, an adhesive sheet including a base material and an adhesive layer, and a first resin composition layer and a release sheet After the sheet of the resin sheet, the surface on the side of the adhesive layer of the adhesive sheet and the area layer on the side of the first resin composition layer of the resin sheet are formed. Furthermore, the peeling of the sheet can be performed after laminating the sheet and the resin sheet, and it can also be used to protect the first resin composition layer until it is used for sealing.

The above-mentioned adhesive sheet can be produced by a general manufacturing method. For example, it can be produced as follows: After forming an adhesive layer on a release sheet as an engineering material, the adhesive layer is transferred to one side of a substrate. Here, the adhesive layer can be prepared by coating the release surface of the release sheet with a mold by preparing a coating liquid containing an adhesive composition constituting the adhesive layer and further containing a solvent or a dispersant as desired. A cloth machine, a curtain coater, a spray coater, a slit coater, a doctor blade coater, etc., apply this coating liquid to form a coating film, and form the coating film by drying.

The resin sheet including the first resin composition layer and the release sheet can be produced, for example, by preparing a coating liquid containing the resin composition and further containing a solvent or a dispersant as desired, and then releasing the sheet on the release sheet. This coating liquid is coated on a peeling surface with a die coater, a curtain coater, a spray coater, a slit coater, a doctor blade coater, or the like to form a coating film. The film was dried to form a first resin composition layer.

The coating liquid for forming the above-mentioned adhesive layer and the coating liquid for forming the first resin composition layer are not particularly limited in their properties as long as they can be applied. When the component of a resin composition layer is contained as a solute, it may be contained as a disperse. Examples of the solvent include organic solvents such as toluene, ethyl acetate, and methyl ethyl ketone.

[Seal Sheet] Next, a seal sheet related to the method for manufacturing a semiconductor device according to the present embodiment will be described. This sealing plate sheet includes at least a curable second resin composition layer. Here, the term "the second resin composition layer has curability" means that the resin composition layer is hardenable. In other words, the second resin composition layer is uncured in a state constituting the sealing plate. The second resin composition layer may be thermosetting or energy ray-curable, and is preferably thermosetting. By making the second resin composition layer thermosetting, even when it is difficult to irradiate the laminated second resin composition layer with energy rays, the second resin composition layer can be hardened well by heating it. The sealing sheet may further include a release sheet laminated on at least one surface of the second resin composition layer.

1. Second resin composition layer The second resin composition layer is preferably formed of a resin composition containing a thermosetting resin. As the resin composition for forming the second resin composition layer, the above-mentioned resin composition for forming the first resin composition layer can be used. The second cured layer formed by curing the second resin composition layer preferably exhibits insulation properties. By making the second hardened layer exhibit insulating properties, abnormalities such as short circuits can be suppressed, and excellent performance can be obtained. Furthermore, it is preferable that both the first hardened layer and the second hardened layer have insulation properties. Moreover, it is preferable that the 1st resin composition layer and the 2nd resin composition layer are formed from the resin composition which has the same composition from a viewpoint of the adhesiveness of these layers.

(1) Physical properties of the second resin composition layer The second resin composition layer material has a melt viscosity at 90 ° C (hereinafter, sometimes referred to as "90 ° C melt viscosity") before curing, and the upper limit value is 1.0. × 10 ⁵ Pa · s or less is preferred, particularly 1.0 × 10 ⁴ Pa · s or less is preferred. If the upper limit of the melt viscosity at 90 ° C is as described above, in the lamination step, the electronic component can be well embedded in the second resin composition layer under heating, thereby effectively suppressing the occurrence of voids around the electrical component. . In addition, the lower limit of the melt viscosity at 90 ° C is preferably 1.0 Pa · s or more, and particularly preferably 10 Pa · s or more. If the lower limit of the melt viscosity at 90 ° C is as described above, when the second resin composition is laminated on the electronic component under heating in the lamination step, the material constituting the second resin composition layer does not flow excessively. Prevents contamination of the device.

Here, the 90 ° C melt viscosity in this specification is measured using a viscoelasticity measuring device. Specifically, the melt viscosity can be measured on a resin composition layer having a thickness of 15 mm using MCR302 (manufactured by Shimadzu Corporation) at a temperature range of 30 to 150 ° C and a temperature increase rate of 5 ° C / min.

(2) Thickness of the second resin composition layer The thickness of the second resin composition layer can be set in consideration of the application of sealing, the thickness of the cured second resin composition layer after sealing, and the like, for example, preferably 20 μm or more . The thickness of the second resin composition layer is preferably 1,000 μm or less, more preferably 500 μm or less, particularly preferably 300 μm or less, and further preferably 200 μm or less. By setting the thickness of the second resin composition layer to be 20 μm or more, in the lamination step, the electronic component can be well embedded in the second resin composition layer, and at the same time, a product obtained by curing the second resin composition layer can be obtained satisfactorily. The effect of the second hardened layer protecting electronic components. Furthermore, the bending of the first hardened layer caused by the hardening shrinkage of the first hardened layer can be easily offset by the bending of the second hardened layer, thereby suppressing bending of the sealing body itself. In addition, by setting the thickness of the second resin composition layer to 1000 μm or less, it is possible to reduce the hardening shrinkage of the second hardened layer formed by hardening the second resin composition layer, and to suppress the bending of the sealing body.

2. Peeling sheet The sealing sheet may include a peeling sheet. As this peeling sheet, what was demonstrated by the peeling sheet provided in the said resin sheet can be used. The sealing sheet may include a release sheet only on one side of the second resin composition layer, or may include a release sheet on both sides of the second resin composition layer.

3. Manufacturing method of sealing plate The sealing plate of the method for manufacturing a semiconductor device according to this embodiment can be manufactured in the same manner as the conventional sealing plate. For example, a coating liquid containing the above-mentioned resin composition and, if desired, a solvent or a dispersant is prepared, and the release surface of the release sheet is subjected to a die coater, a curtain coater, a spray coater, A slit coater, a blade coater, etc. are used to apply this coating liquid to form a coating film, and the coating film is dried to produce a sealing plate. The properties of the coating liquid are not particularly limited as long as it can be applied, and the component for forming the second resin composition layer may be contained as a solute, or it may be contained as a dispersant. The peeling sheet can be peeled as an engineering material or used to protect the resin composition layer until it is used for sealing.

In addition, in a method for producing a sealing sheet in which a release sheet is laminated on each of the two surfaces of the second resin composition layer, a coating liquid may be applied to the release surface of the release sheet to form a coating film, and then dried to form a first The resin sheet composed of the 2 resin composition layer and the release sheet is pasted on the opposite surface of the resin sheet from the release sheet on the second resin composition layer side to the release surface of the other release sheet to obtain A sealing sheet composed of a sheet / second resin composition layer / peeling sheet. At least one of the peeling sheets of the sealing sheet may be peeled as an engineering material, or may be used to protect the second resin composition layer until it is used for sealing. Examples of the solvent include organic solvents such as toluene, ethyl acetate, and methyl ethyl ketone.

[Method for Manufacturing Semiconductor Device] Next, a method for manufacturing a semiconductor device according to this embodiment will be described. 1 to 3 are cross-sectional views illustrating an example of a method for manufacturing a semiconductor device according to this embodiment. First, as shown in FIG. 1 (a), as an electronic component mounting step, one or two or more electronic components 2 are placed on a surface on the side of the first resin composition layer 11 of the laminated sheet 1. In addition, FIG. 1 (a) shows a state in which the laminated sheet 1 includes an adhesive sheet 12 and a first resin composition layer 11 laminated on the adhesive sheet 12. The method of placing the electronic component 2 on the laminated sheet 1 is not particularly limited, and a general method can be adopted. In addition, when the electronic component 2 is placed on the laminated sheet 1, it may be heated. By heating, the adhesiveness of the electronic component 2 can be improved.

The electronic component 2 is not particularly limited as long as the electronic component can be a general sealing object, and examples thereof include a semiconductor wafer and the like. In addition, the electronic component 2 may be a semiconductor wafer placed at a predetermined position on the carrier board. At this time, at least a part of the carrier plate is sealed together with the semiconductor wafer or the like in the state of being mounted in this manner. Examples of the carrier board include a lead frame, a polyimide tape, and a printed circuit board. In addition, examples of the carrier board around the electronic component 2 on the laminated board 1 include a lead frame, a polyimide tape, and a printed circuit board. Furthermore, a frame made of a metal such as copper, a frame made of a resin, or the like (also referred to as a frame-shaped member) may be provided around the electronic component 2 on the laminated sheet 1, and the frame-shaped member may be provided. At least a part of is sealed with the electronic component 2. The frame-shaped member is generally composed of one or more openings composed of holes penetrating in the thickness direction, and a frame-shaped portion made of copper, resin, or the like.

When the frame-shaped member is used, in the electronic component mounting step, for example, after the frame-shaped member is placed on the adhesive surface of the adhesive sheet 1, the electronic component 2 is placed at the position of the opening of the frame-shaped member. . Thereby, in the lamination step, the leakage of the sealing resin to the outside of the opening can be suppressed, the thickness of the obtained semiconductor device can be made uniform, the bending of the hardened layer can be suppressed, and the bending of the obtained semiconductor device can be suppressed.

Next, as shown in FIG. 1 (b), as a laminating step, a sealing sheet having at least a hardening second resin composition layer 3 is laminated so as to cover the electronic component 2 while being in contact with the first resin composition 11. The second resin composition layer 3. When the sealing sheet has a release sheet on only one side, it is preferable to laminate the release sheet from the second resin after laminating the exposed surface of the second resin composition layer 3 of the sealing sheet to cover the electronic component 2. The composition layer 3 is peeled. In addition, when the sealing sheet has release sheets on both sides, it is preferable that the exposed surface of the resin composition layer exposed by peeling off one of the release sheets is laminated to cover the electronic component 2 and then the other release sheet is laminated. The sheet is peeled from the second resin composition layer 3. In addition, when the sealing plate is provided with a release plate on one or both sides, the exposed surface of the second resin composition layer 3 of the sealing plate may be laminated to cover the electronic component 2 as described later. After the second resin composition layer 3 is cured to form the second cured layer 3 ', the release sheet is peeled from the second cured layer 3'.

The above-mentioned lamination step can be performed by a conventionally known laminating apparatus, and the lamination conditions are, for example, preferably such that the temperature of the second resin composition layer 3 is 40 ° C or higher, and more preferably 50 ° C or higher. The temperature is preferably 180 ° C or lower, more preferably 150 ° C or lower, and particularly preferably 120 ° C or lower. The lamination pressure is preferably 0.1 MPa or more. The pressure is preferably 0.5 MPa or less. The time required for lamination is preferably 10 seconds or more, and particularly preferably 30 seconds or more. The time is preferably 10 minutes or less, and particularly preferably 5 minutes or less.

The above-mentioned lamination step can be performed under normal pressure. However, from the viewpoint of the adhesion and embedding of the second resin composition layer 3 to the electronic component 2, it is preferably performed under reduced pressure. The pressure reduction conditions are, for example, preferably 5 kPa or less, more preferably 500 Pa or less, and particularly preferably 100 Pa or less.

Next, as shown in FIG. 1 (c) and FIG. 1 (d), a sealing body 4 is obtained by a hardening step. In this hardening step, first, as shown in FIG. 1 (c), it is preferable that the first resin composition layer 11 and the second resin composition layer 3 are cured simultaneously, and the first cured layer 11 'and the second cured are formed, respectively. Layer 3 '. This hardening is preferably performed by heat treatment, that is, it is preferable that the first resin composition layer 11 and the second resin composition layer 3 are hardened by heating.

After the hardening is completed, the reaction rate of the first hardened layer 11 'is preferably 85% or more, more preferably 90% or more, and particularly preferably 95% or more. When the first resin composition layer 11 is hardened such that the reaction rate of the first hardened layer 11 ′ is 85% or more, the hardening reaction of the first resin composition layer 11 can proceed more favorably and can be appropriately three-dimensionally Reticulation, therefore, the surface of the first hardened layer 11 'does not become excessively rough after the slag removing step described later, and the arithmetic average roughness of the surface of the first hardened layer 11' can be made relatively small. This makes it difficult to form a conductor inside the first hardened layer 11 ′ in the subsequent electrode formation step. Therefore, even when a fine electrode is formed, insulation defects such as a short circuit can be effectively suppressed. The method for measuring the reaction rate is as described in the test examples described later.

In addition, after the hardening is completed, the reaction rate of the second hardened layer 3 'is preferably 85% or more, more preferably 90% or more, and particularly preferably 95% or more. When the second resin composition layer 3 is hardened such that the reaction rate of the second hardened layer 3 ′ is 85% or more, the hardening reaction of the second resin composition layer 3 can proceed more favorably and can be appropriately three-dimensionally As a result of reticulation, the surface of the second hardened layer 3 'does not become excessively rough after the slag removing step described later, and the arithmetic average roughness of the surface of the second hardened layer 3' can be made small. This makes it difficult to form a conductor in the second hardened layer 3 'in the subsequent electrode formation step. Therefore, even when a fine electrode is formed, insulation defects such as a short circuit can be effectively suppressed. The method for measuring the reaction rate is as described in the test examples described later.

The arithmetic average roughness (Ra value) on the surface of the formed first hardened layer 11 ′ opposite to the electronic component 2 is preferably 300 nm or less from the viewpoint of easily forming a fine electrode, and 150 nm The following is more preferable, particularly preferably 100 nm or less, and further preferably 50 nm or less. The lower limit value of the arithmetic average roughness (Ra value) is not particularly limited. From the viewpoint of stabilizing the adhesion of the electrode 6 after the electrode formation step described later, it is preferable to be 1 nm or more, especially It is preferably at least 5 nm, and more preferably at least 10 nm. The method of measuring the arithmetic average roughness (Ra value) is as described in a test example described later.

The arithmetic average roughness (Ra value) of the surface of the second hardened layer 3 'formed on the side opposite to the electronic component 2 is preferably 300 nm or less from the viewpoint of easily forming a fine electrode, and 150 nm The following is more preferable, particularly preferably 100 nm or less, and further preferably 50 nm or less. The lower limit value of the arithmetic average roughness (Ra value) is not particularly limited. From the viewpoint of stabilizing the adhesion of the electrode 6 after the electrode formation step described later, it is preferable to be 1 nm or more, especially It is preferably at least 5 nm, and more preferably at least 10 nm. The method of measuring the arithmetic average roughness (Ra value) is as described in a test example described later.

The temperature at which the first resin composition layer 11 and the second resin composition layer 3 are cured and heated by heating is, for example, preferably 100 ° C or higher, and particularly preferably 120 ° C or higher. The temperature is preferably 240 ° C or lower, and particularly preferably 200 ° C or lower. The heat treatment time is preferably 15 minutes or more, and particularly preferably 20 minutes or more. The time is preferably 300 minutes or less, and particularly preferably 100 minutes or less. In addition, the first resin composition layer 11 and the second resin composition layer 3 are preferably hardened by heating in a stepwise manner by a plurality of heat treatments. Thereby, the said reaction rate of the 1st hardened layer 11 'and the 2nd hardened layer 3' can easily reach a desired value. The heating at this time is preferably performed in two or more times. In particular, it is more preferable to perform a first heat treatment for thermally curing at a temperature T1 and a second heat treatment for thermally curing at a temperature T2 higher than the temperature T1. Heat treatment is a two-stage heat treatment. In this case, in the first heat treatment, the temperature T1 is preferably 100 ° C. or more and 130 ° C. or less, and the heat treatment time is preferably 15 minutes or more and 60 minutes or less. In the second heat treatment, the temperature T2 is preferably 150 ° C. or more and 220 ° C. or less, and the heat treatment time is preferably 30 minutes or more and 120 minutes or less.

After the first resin composition layer 11 and the second resin composition layer 3 are cured, as shown in FIG. 1 (d), the adhesive sheet 12 is preferably peeled from the first cured layer 11 ′. Thereby, the sealing body 4 provided with the 1st hardened layer 11 ', the 2nd hardened layer 3', and the electronic component 2 sealed by the 1st hardened layer 11 'and the 2nd hardened layer 3' can be obtained. Here, when the adhesive sheet 12 includes an energy ray-curable adhesive layer, as described above, before peeling, the adhesive layer is irradiated with energy ray to harden, so that the adhesive force of the adhesive sheet 12 is reduced, and This peeling is easily performed.

Furthermore, although the hardening steps shown in FIGS. 1 (c) and 1 (d) are performed after the first resin composition layer 11 and the second resin composition layer 3 are hardened, the sheet 12 is adhered. Peeling, but the hardening of the 1st resin composition layer 11 and the 2nd resin composition layer 3 may be performed after peeling the adhesive sheet 12 first. In addition, in the hardening steps shown in FIGS. 1 (c) and 1 (d), the hardening of the first resin composition layer 11 and the second resin composition layer 3 is performed at the same time. The hardening of the first resin composition layer 11 is performed at a stage between the placing step and the laminating step, and the hardening of the second resin composition layer 3 is performed at the hardening step. When the hardening of the first resin composition layer 11 and the hardening of the second resin composition layer 3 are performed separately in this manner, the preferable conditions for the respective hardening are also as described above.

Next, an electrode may be formed on at least one of the first hardened layer and the second hardened layer by any conventionally known method. An example formed by the semi-additive method will be described below.

That is, after the hardening step, as a hole forming step, a hole that exposes a part of the surface of the electronic component 2 is formed as a hole 5 penetrating at least one of the first hardened layer 11 'and the second hardened layer 3'. The formation of the hole 5 and the structure of the obtained semiconductor device can be provided on a desired side of the first hardened layer 11 ′ and the second hardened layer 3 ′, or may be provided on the first hardened layer 11 ′. And the second hardened layer 3 '. Here, Fig. 2 (a) is a cross-sectional view showing a state where a hole 5 penetrating the first hardened layer 11 'is formed. At this time, a hole 5 penetrating to the interface between the first hardened layer 11 'and the electronic component 2 is formed from the surface of the first hardened layer 11' opposite to the second hardened layer 3 '. On the other hand, Fig. 3 (a) is a cross-sectional view showing a state where a hole 5 penetrating through the second hardened layer 3 'is formed. At this time, a hole 5 is formed from the surface of the first hardened layer 11 'opposite to the second hardened layer 3' to penetrate the interface between the first hardened layer 11 'and the electronic component 2. The formation of the hole 5 can be performed by a general method. For example, the surface on which the hole 5 is formed can be formed by using a laser irradiation device under normal irradiation conditions.

Next, as a sizing removal step, the slag removing process is performed on the sealing body 5 forming the hole 5. In the hole formation step described above, when the hole 5 is formed, a residue (slag) of the components constituting the first hardened layer 11 'or the second hardened layer 3' may occur, and the rubber residue may remain in the hole 5. However, by performing the slag removing step, the slag in the hole 5 can be removed, and in the subsequent electrode formation step, when an electrode is formed in the hole 5, the conduction failure of the electrode can be suppressed.

The above-mentioned slag removal treatment can be performed by a general method, for example, the sealing body 4 is immersed in an alkaline solution at a temperature of 30 ° C or higher and 120 ° C or lower for 1 to 30 minutes. In addition, as the alkaline solution to be used, a solution generally used for sizing treatment (sizing solution) can be used, and for example, a sodium hydroxide solution containing potassium permanganate, a sodium permanganate solution, and hydrogen can be used. Aqueous solution of sodium oxide and the like. In addition, as the alkaline solution, an aqueous solution containing potassium permanganate and sodium hydroxide may be used in addition to an aqueous solution containing sodium permanganate and sodium hydroxide.

Finally, as an electrode forming step, an electrode 6 electrically connected to the electronic component 2 through the hole 5 is formed. Here, FIG. 2 (b) is a sectional view showing a state where the electrode 6 is formed in the hole 5 formed in the first hardened layer 11 'in the hole forming step. 3 (b) is a cross-sectional view showing a state where the electrode 6 is formed in the hole 5 formed in the second hardened layer 3 'in the hole formation step. The formation of the electrode 6 can be performed by a general method. For example, the surface of the sealing body 4 on which the hole 5 is formed is subjected to a plating process using a conductive metal such as copper, silver, and the conductive metal is buried in the hole 5, and the surface is covered with the conductive metal. Next, unnecessary portions of the conductive metal covering the surface are removed by etching or the like to form a conductive metal from the buried hole 5 and a connection with the buried conductive metal to have a predetermined shape remaining on the surface. Electrode 6 composed of a conductive metal. By forming the electrode 6, a semiconductor device including the electrode 6 electrically connected to the electronic component 2 can be obtained together with the sealed electronic component 2.

In the method for manufacturing a semiconductor device according to this embodiment, as described above, the electrode 6 can be provided with holes 5 formed in a desired layer of the first hardened layer 11 ′ and the second hardened layer 3 ′ according to the application of the semiconductor device. . Alternatively, holes 5 may be formed in both the first hardened layer 11 ′ and the second hardened layer 3 ′, and the electrode 6 may be provided. Therefore, in the obtained semiconductor device, it is easy to provide the electrode 6 at a free position, and the obtained semiconductor device becomes easy to be three-dimensionally assembled. As a result, it is easy to increase the integration and performance of the semiconductor device.

In addition, the method for manufacturing a semiconductor device according to this embodiment is applicable to the manufacture of a fan-out wafer-level package (FOWLP), a fan-out panel-level package (FOPLP), and a component-embedded substrate. Especially in the above manufacturing method, since a plurality of electronic components can be hermetically sealed at a time, the package obtained by this can be cut at a predetermined position, and the plurality of semiconductor packages can be divided, so that it can be produced with high efficiency and high yield. Semiconductor packaging. That is, the method for manufacturing a semiconductor device according to this embodiment can also be applied to a method with high efficiency and high yield.

The embodiments described above are described for easy understanding of the present invention, and are not described for limiting the present invention. Therefore, each element disclosed in the said embodiment includes all the design changes, an equivalent, etc. which belong to the technical scope of this invention. [Example]

Hereinafter, the present invention will be described more specifically with examples and the like, but the scope of the present invention should not be limited to these examples and the like.

[Manufacturing Example 1] (Production of laminated sheet) (1) Production of adhesive sheet 40 parts by mass (in terms of solid content, hereinafter the same) of an acrylate copolymer (2-ethylhexyl acrylate 92.8% by mass, acrylic acid Copolymer of 2-hydroxyethyl ester 7.0 mass and acrylic acid 0.2 mass%), and 5 parts by mass of two-terminal hydroxyhydrogenated polybutadiene as an adhesion-imparting agent (manufactured by Soda Co., Ltd., product name "GI-1000") and 3.5 parts by mass of a hexamethylene isocyanate aliphatic isocyanate (made by Japan Polyurethane Co., Ltd., product name "Coronate HX") as a bridging agent was mixed with methyl ethyl ketone to prepare an adhesive composition having a solid content concentration of 30% by mass. Coating liquid.

Next, the prepared coating liquid was applied to a release film of a polyethylene terephthalate film on one side of the polyethylene terephthalate film with a silicone-based release layer using a roll coater (product name, manufactured by Lintec Corporation, product name). "SP-PET382150", thickness: 38 μm) The peeled surface was heated at 90 ° C. and 90 seconds, and then heated at 115 ° C. and 90 seconds, and the coating film was dried to form an adhesive layer to obtain a thickness of 50 μm. Laminated body of adhesive layer and release film.

Next, the surface of the obtained adhesive layer opposite to the release film was stuck to a transparent polyethylene terephthalate film (manufactured by Toyobo Co., Ltd., product name "PET50A-4300", thickness) : 50 μm, glass transition temperature Tg: 67 ° C., thermal shrinkage in the MD direction: 1.2%, thermal shrinkage in the CD direction: 0.6%).

The storage elastic modulus of the obtained adhesive layer was measured by a method described later at 100 ° C. and a measurement frequency was 1 Hz. As a result, it was 2.36 × 10 ⁵ Pa. In addition, the adhesive force of the obtained adhesive sheet to the copper foil was measured by a method described later, and it was 1.2 N / 25 mm. In addition, the adhesion force of the adhesive sheet to the polyimide film was measured by a method described later, and it was 1.1 N / 25 mm. The 5% weight reduction temperature of the adhesive layer was measured by a method described later, and it was 304 ° C.

The storage elastic modulus is measured as follows. Using a plurality of laminates of the adhesive layer and the release film produced as described above, the adhesive was laminated to a total thickness of 3 mm, and then a cylinder (thickness 3 mm) having a diameter of 8 mm was punched out, and this was used as a sample. For this sample, in accordance with JIS K7244-6: 1999, using a viscoelasticity measuring device (manufactured by REOMETRIC, product name "DYNAMIC ANALYZER"), the torsional shear method was used to measure the frequency: 1 Hz and the measurement temperature: 100 ° C. The storage elastic modulus (Pa) was measured.

The adhesive force to the said copper foil was measured as follows. The adhesive sheet produced as described above was cut to a length of 100 mm and a width of 25 mm, and the peeled film was used as a test piece. After the copper foil was pressure-bonded at 0.5 MPa and 50 ° C for 20 minutes, it was subjected to standard conditions (23 ° C , 50% RH), and left for 24 hours. Then, under a standard environment (23 ° C, 50% RH), a tensile tester (manufactured by Shimadzu Corporation, product name "AUTOGRAPH AG-IS") was used at a peeling angle of 180 ° and a peeling speed of 300 mm / min. The adhesive sheet was peeled off, and the adhesive force (mN / 25mm) was measured. In addition, the adhesive force to the polyimide film was changed from copper foil to polyimide film. In addition, it was measured by the same adhesive force measuring method as described above.

The 5% weight reduction temperature was measured as follows. That is, for the adhesive layer formed in Production Example 3, a differential thermal and thermogravimetric simultaneous measurement device (manufactured by Shimadzu Corporation, product name "DTG-60") was used, and nitrogen was used as the inflow gas at a gas inflow speed of 100 m1 / min. The temperature was raised at a rate of 20 ° C / min, and the thermogravimetric measurement was performed by increasing the temperature from 40 ° C to 550 ° C (in accordance with JIS K7120 "Method for Measuring Thermogravimetric Weight of Plastics"). From the obtained thermogravimetric curve, a temperature at which the mass was reduced by 5% relative to the mass at a temperature of 100 ° C. (5% weight reduction temperature) was determined.

(2) Production of a resin sheet composed of a first resin composition layer and a release film 5.1 parts of a bisphenol A type phenoxy resin (manufactured by Mitsubishi Chemical Corporation, product name "jER1256") as a thermoplastic resin, and 5.7 parts Bisphenol A epoxy resin (product name "jER828", manufactured by Mitsubishi Chemical Corporation) as a thermosetting resin, and 5.7 parts of biphenyl epoxy resin (product name, manufactured by Nippon Kayaku Co., Ltd.) as a thermosetting resin NC-3000-L "), 4.1 parts of a naphthalene-type epoxy resin (manufactured by DIC, product name" HP-4700 ") as a thermosetting resin, and 14.3 parts of biphenyl-type phenol (Mingwa Chemical Co., Ltd.) as a thermosetting resin Company product, product name "MEHC-7851-SS"), 0.1 part 2-ethyl-4-methylimidazole (product made by Shikoku Chemical Co., Ltd., product name "2E4MZ") as an imidazole-based hardening catalyst, and 65 parts An epoxy-based silane-treated silicon dioxide filler as an inorganic filler [silicon dioxide filler (manufactured by ADOMATEX, product name "SO-C2", average particle diameter: 0.5 μm, maximum particle diameter: 2 μm, shape: ball Shape) 3-glycidyloxypropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., product name "KBM-403", smallest Cover area ︰330m ² / g) subjected to surface treatment], mixed in methyl ethyl ketone to obtain a coating liquid of a solid content concentration of 50% by mass of the resin composition. This coating liquid was applied to a 38 μm-thick polyethylene terephthalate film, and a release film (product name: “SP-PET38AL-5” manufactured by LINTEC, Inc.) was provided with an alkyd-based release agent layer. ), The obtained coating film was dried in an oven at 100 ° C. for 1 minute to prepare a resin sheet composed of a first resin composition layer having a thickness of 20 μm and a release film.

(3) Production of laminated sheet Next, the release film of the adhesive sheet produced in step (1) is peeled off, and the exposed surface of the exposed adhesive layer is the same as that of the resin sheet produced in step (2). The surface on the side of the first resin composition layer was adhered to obtain a laminated sheet with a release film.

[Production Example 2] (Production of sealing sheet) 5.1 parts of a bisphenol A type phenoxy resin (manufactured by Mitsubishi Chemical Corporation, product name "jER1256") as a thermoplastic resin, and 5.7 parts of bisphenol as a thermosetting resin A-type epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name "jER828"), 5.7 parts of biphenyl epoxy resin (manufactured by Nippon Kayaku Co., Ltd., product name "NC-3000-L"), 4.1 parts of a naphthalene-type epoxy resin (manufactured by DIC Corporation, product name "HP-4700") as a thermosetting resin, and 14.3 parts of biphenyl-type phenol (manufactured by Meiwa Chemical Co., Ltd., product name "MEHC- 7851-SS "), 0.1 part of 2-ethyl-4-methylimidazole (made by Shikoku Chemical Co., Ltd., product name" 2E4MZ ") as an imidazole-based hardening catalyst, and 65 parts of epoxy group as an inorganic filler Silane-treated silicon dioxide filler [silicon dioxide filler (manufactured by ADOMATEX, product name "SO-C2", average particle size: 0.5 μm, maximum particle size: 2 μm, shape: spherical) with 3-glycidyloxy Propyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., product name "KBM-403", minimum coating area: 330 m ² / g) Treatment], mixed with methyl ethyl ketone to obtain a coating solution of a resin composition having a solid content concentration of 40% by mass. This coating liquid was applied to a 38 μm-thick polyethylene terephthalate film, and a release film (product name: “SP-PET38AL-5” manufactured by LINTEC, Inc.) was provided with an alkyd-based release agent layer. ) On the release surface, the obtained coating film was dried in an oven at 100 ° C. for 1 minute to produce a sealing plate composed of a second resin composition layer having a thickness of 50 μm and a release film.

[Example 1] (Electronic component placement step) First, a frame having a plurality of openings was adhered to the surface of the first resin composition layer side exposed by peeling the release film from the laminated sheet produced in Production Example 1. Shaped member (made of copper, thickness: 130 μm, size of opening: 8 mm × 8 mm). Next, a plurality of semiconductor wafers (5 mm × 5 mm, thickness: 130 μm) were prepared, and one semiconductor wafer was placed at a predetermined position in each opening of the frame-shaped member. .

(Lamination Step) Next, the surface of the second resin composition layer side of the sealing plate sheet produced in Production Example 2 was heated to 100 ° C. to cover the semiconductor wafer and the frame-shaped member on the laminated plate. On the film, temporarily stuck. Next, the sealing plate was decompressed to a state of 2 hPa or less using a vacuum laminating apparatus, and then heat-resistant rubber was used at 90 ° C, pressure of 0.1 MPa for 10 seconds, and then heat-resistant rubber was used at 90 ° C. 0.3 MPa, pressing for 30 seconds.

(Hardening step) After that, the release film is peeled from the laminated sealing sheet, the first resin composition layer and the second resin composition layer are cured at 100 ° C (T1) for 30 minutes, and then cured at 180 ° C (T2) for 60 minutes. In 1 minute, the first hardened layer and the second hardened layer were formed. After that, the adhesive sheet was peeled from the first hardened layer at a peeling angle of 180 °.

(Hole formation step) The obtained hardened surface of the first hardened layer side was irradiated with a laser using a CO ₂ laser processing machine to form a through hole that reached the semiconductor wafer and had a diameter of 100 μm on the surface of the sealed body.

(Slag removal step) Next, the surface of the second hardened layer side of the sealing body (the surface opposite to the surface of the first hardened layer forming the through hole) is covered with the protective tape, and then the mixture is mixed with ethylene glycol. An ethereal solvent and an ethylene glycol monobutyl ether were immersed in an alkaline swelling liquid at 60 ° C for 5 minutes, and then immersed in a roughening solution (aqueous alkaline permanganic acid solution) at 80 ° C for 15 minutes. The solution was immersed in an aqueous sulfuric acid solution at 40 ° C for 5 minutes for neutralization, and then dried at 80 ° C for 5 minutes.

(Electrode formation step) Next, the sealing body was immersed in a solution for electroless plating at 40 ° C. for 6 minutes, then immersed in an electroless copper plating solution at 25 ° C. for 18 minutes, and then annealed at 150 ° C. for 30 minutes. After that, the photoresist layer for the plating film is adhered to the surface of the sealing body where the through-holes are formed, and areas of the photoresist layer for the plating film having a predetermined pattern are removed by exposure and development. Thereafter, copper sulfate plating was performed to form a layer made of copper having a thickness of 10 μm in the removed region. Next, an unnecessary electroless copper plated portion was removed by ablation to remove the remaining photoresist layer for plating to obtain an electrode having a wiring shape. The wiring pattern of this wiring is a wiring pattern 1 with a wiring width (L) of 50 μm and a wiring interval (S) of 50 μm, and a wiring pattern 2 with a wiring width (L) of 10 μm and a wiring interval (S) of 10 μm. Finally, the protective tape was peeled off and annealed at 190 ° C for 60 minutes to obtain a sealing body in which an electrode was formed on the first hardened layer.

[Example 2] A sealing body was obtained in the same manner as in Example 1 except that an electrode was formed on the surface on the second hardened layer side. That is, a sealed body is obtained in which an electrode is not formed on the surface on the first hardened layer side and an electrode is formed only on the surface on the second hardened layer side.

[Example 3] In the hardening step, the hardening conditions were that the first resin composition layer and the second resin composition layer were thermally hardened by a single heat treatment at 170 ° C (T1) for 30 minutes. In Example 1, a sealed body was obtained in the same manner.

[Example 4] In the curing step, a sealing body was obtained in the same manner as in Example 1 except that the curing conditions were 30 minutes at 100 ° C (T1) and 30 minutes at 150 ° C (T2).

[Test Example 1] (Measurement of reaction rate) The first resin composition layer obtained by peeling the release film from the resin sheet produced in Production Example 1 was measured by a differential scanning calorimeter (DSC) under the following conditions and measured. The first resin composition generates heat (integrated amount) due to thermal curing. The calorific value thus measured is expressed by ΔH0 (kJ). Differential scanning calorimeter (DSC) device: manufactured by TA Instruments Inc. Heating rate: 10 ° C / mn Temperature range: 50 ° C to 300 ° C

In addition, the resin sheet produced in Production Example 1 was subjected to the same conditions as the thermal curing in the hardening step of the first sealing sheet in Example 1 [after being cured at 100 ° C (T1) for 30 minutes, and then at 180 ° C (T2 ) Hardening for 60 minutes] After thermal curing, the first cured layer obtained by peeling the release film was subjected to a differential scanning calorimeter (DSC) under the same conditions as above to measure the heat generated by the first cured layer due to thermal curing. Amount (integral amount). The measured calorific value is represented by ΔH1 (kJ).

Then, using the measured ΔH0 (kJ) and ΔH1 (kJ), the following formula was used to calculate the reaction rate (%) of the first hardened layer in Example 1. The results are shown in Table 1. Response rate (%) = (ΔH0-ΔH1) / ΔH × 100

In addition, the heat generation amount ΔH0 (kJ) of the second resin composition layer obtained by peeling the release film from the sealing sheet produced in the same manner as in Production Example 2 was measured in the same manner as described above. In addition, the second sealing plate sheet produced in the same manner as in Production Example 2 was cured under the same conditions as those in the curing step of Example 1 [after being cured at 100 ° C (T1) for 30 minutes and then at 180 ° C (T2) 60 minutes hardening] After heat curing, the calorific value ΔH1 (kJ) of the second cured layer obtained by peeling the release film was measured in the same manner as described above. Then, from the measured ΔH0 (kJ) and ΔH1 (kJ), calculation was performed in the same manner as described above, and the reaction rate (%) of the second hardened layer of Example 1 was calculated. The results are shown in Table 1.

In addition, the thermal curing conditions for measuring the calorific value ΔH1 (kJ) were changed to those described in the examples, except that the first hardened layers for Examples 2 to 4 were calculated in the same manner as the above method. Reaction rate (%) and reaction rate (%) of the second hardened layer. These results are also shown in Table 1.

[Experimental Example 2] (Measurement of Arithmetic Mean Roughness) A sealing body (including a first hardened layer and a second hardened layer) obtained in the hardening step of the manufacturing methods of Examples 1 to 4 and before the hole formation step was performed. A sealed body of a sealed semiconductor wafer), the surface of the first hardened layer and the second hardened layer was measured for an arithmetic average roughness using a contact roughness meter (manufactured by Mitutoyo, product name "SV3000S4") in accordance with JIS B0601-1994. Degree Ra (μm). The results are shown in Table 1.

[Experimental Example 3] (Evaluation of electrode formability) The wiring pattern 1 (L / S = 50 μm / 50 μm) and the wiring pattern 2 (L / S = 10 μm / 10 μm) of the sealing body produced in the examples were measured using a digital microscope ( KEYENCE Corporation (product name: "VHX-100") was observed and the electrode formation property was evaluated based on the following criteria. A: A predetermined wiring pattern is formed. B: There is a partial deviation from a predetermined wiring pattern. C: A deviation from a predetermined wiring pattern occurs, and contact (short circuit) between wirings also occurs.

[Table 1]

According to the manufacturing method of the embodiment, it was confirmed that the steps from the wafer mounting step to the formation of the electrode with respect to the sealing resin can be performed efficiently with very simple operation contents. In addition, as shown in Table 1, it was confirmed that an electrode having a good wiring pattern can be formed on any surface of the sealing body. This makes it possible to increase the integration and performance of the semiconductor device. Accordingly, the manufacturing method of the embodiment can satisfactorily seal electronic components, and can also manufacture semiconductor devices satisfactorily. [Industrial profitability]

The method for manufacturing a semiconductor device of the present invention can be suitably used for manufacturing semiconductor devices such as a wafer-embedded substrate, a fan-out wafer-level package, and a fan-out panel-level package.

1‧‧‧ laminated sheet

11‧‧‧1st resin composition layer

11'‧‧‧The first hardened layer

12‧‧‧ Adhesive plate

2‧‧‧Electronic parts

3‧‧‧ 2nd resin composition layer

3'‧‧‧ 2nd hardened layer

4‧‧‧Sealed body

5‧‧‧hole

6‧‧‧ electrode

FIG. 1 is a cross-sectional view illustrating a part of a method for manufacturing a semiconductor device according to an embodiment of the present invention. 2 is a cross-sectional view illustrating a part of a method for manufacturing a semiconductor device according to an embodiment of the present invention. 3 is a cross-sectional view illustrating a part of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

Claims (15)

A method for manufacturing a semiconductor device, comprising: an electronic component mounting step; an adhesive sheet including a base material and an adhesive layer laminated on one side of the base material; and an adhesive sheet laminated on the adhesive plate. One or two or more electronic components are placed on the first resin composition layer side surface of the hardened first resin composition layered surface of the adhesive layer side surface; Covering at least the electronic component while contacting the first resin composition, laminating the second resin composition layer of the sealing sheet having at least a hardenable second resin composition layer; and a hardening step to obtain the first resin composition. The first hardened layer formed by curing the resin composition layer, the second hardened layer formed by curing the second resin composition layer, and the electronic component sealed by the first hardened layer and the second hardened layer. A sealed body obtained by peeling the adhesive sheet; a hole forming step, forming a hole exposing a part of the surface of the electronic component, which penetrates the first hardened layer and the second hardened A hole in at least one layer of the layer; a step of removing slag; a step of removing the slag of the sealing body forming the hole; and an electrode forming step of forming an electrode electrically connected to the electronic component through the hole. The method for manufacturing a semiconductor device according to item 1 of the scope of patent application, wherein the hardening of the first resin composition layer and the hardening of the second resin composition layer are performed simultaneously, and the adhesive sheet is peeled off at the above The first resin composition layer and the second resin composition layer are cured after curing. The method for manufacturing a semiconductor device according to the first claim, wherein at least one of the first hardened layer and the second hardened layer exhibits insulation properties. The method for manufacturing a semiconductor device according to item 1 of the scope of patent application, wherein at least one of the first resin composition layer and the second resin composition layer is cured by heat treatment. The method for manufacturing a semiconductor device according to item 4 of the scope of patent application, wherein the heat treatment is performed in stages by a plurality of heat treatments. The method for manufacturing a semiconductor device according to item 5 of the scope of patent application, wherein the heat treatment is a first heat treatment by thermal curing at a temperature T1 and a second heat treatment by thermal curing at a temperature T2 higher than the temperature T1 Processing proceeds. The method for manufacturing a semiconductor device according to item 1 of the scope of patent application, wherein the curing of the first resin composition layer is performed so that a reaction rate of the first cured layer is 85% or more. The method for manufacturing a semiconductor device according to item 1 of the scope of patent application, wherein the curing of the second resin composition layer is performed so that a reaction rate of the second cured layer is 85% or more. The method for manufacturing a semiconductor device according to claim 1, wherein at least one of the first resin composition layer and the second resin composition layer is formed of a resin composition containing a thermosetting resin. The method for manufacturing a semiconductor device according to item 9 of the scope of patent application, wherein the resin composition contains an inorganic filler. The method for manufacturing a semiconductor device according to item 10 of the scope of patent application, wherein the inorganic filler is subjected to surface treatment with a surface treatment agent having a minimum coating area of less than 550 m ² / g. The method for manufacturing a semiconductor device according to item 9 of the scope of patent application, wherein the first resin composition layer and the second resin composition layer are formed of the resin composition having the same composition. The method for manufacturing a semiconductor device according to item 1 of the scope of patent application, wherein the thickness of the first resin composition layer is 1 μm or more and 100 μm or less. The method for manufacturing a semiconductor device according to item 1 of the scope of patent application, wherein the thickness of the second resin composition layer is 50 μm or more and 1000 μm or less. A laminated sheet that can be used in a method for manufacturing a semiconductor device according to any one of claims 1 to 14, including a base material and an adhesive layer laminated on one side of the base material And a first curable first resin composition layer laminated on the adhesive layer side of the adhesive sheet.