TW201930502A - 光電裝置之製造方法 - Google Patents

光電裝置之製造方法 Download PDF

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Publication number
TW201930502A
TW201930502A TW107135977A TW107135977A TW201930502A TW 201930502 A TW201930502 A TW 201930502A TW 107135977 A TW107135977 A TW 107135977A TW 107135977 A TW107135977 A TW 107135977A TW 201930502 A TW201930502 A TW 201930502A
Authority
TW
Taiwan
Prior art keywords
curing
carbon atoms
light
led
precursor
Prior art date
Application number
TW107135977A
Other languages
English (en)
Chinese (zh)
Inventor
拉夫 葛羅特穆勒
明奎蘭 亞伯拉罕 卡沙斯 葛西亞
北文雄
克里斯多夫 蘭曼
法比恩 布恩欽
Original Assignee
德商馬克專利公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德商馬克專利公司 filed Critical 德商馬克專利公司
Publication of TW201930502A publication Critical patent/TW201930502A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/54—Nitrogen-containing linkages
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/62—Nitrogen atoms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Led Device Packages (AREA)
TW107135977A 2017-10-13 2018-10-12 光電裝置之製造方法 TW201930502A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP17196362 2017-10-13
??17196362.2 2017-10-13

Publications (1)

Publication Number Publication Date
TW201930502A true TW201930502A (zh) 2019-08-01

Family

ID=60262679

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107135977A TW201930502A (zh) 2017-10-13 2018-10-12 光電裝置之製造方法

Country Status (5)

Country Link
US (1) US11888095B2 (fr)
EP (1) EP3695443B1 (fr)
CN (1) CN111194485A (fr)
TW (1) TW201930502A (fr)
WO (1) WO2019072881A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI705123B (zh) * 2019-10-29 2020-09-21 隆達電子股份有限公司 波長轉換物質以及發光裝置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050167646A1 (en) 2004-02-04 2005-08-04 Yissum Research Development Company Of The Hebrew University Of Jerusalem Nanosubstrate with conductive zone and method for its selective preparation
TW200621918A (en) 2004-11-23 2006-07-01 Clariant Int Ltd Polysilazane-based coating and the use thereof for coating films, especially polymer films
US8012774B2 (en) 2005-01-11 2011-09-06 SemiLEDs Optoelectronics Co., Ltd. Coating process for a light-emitting diode (LED)
DE102005008857A1 (de) 2005-02-26 2006-09-07 Clariant International Limited Verwendung von Polysilazanen als permanente Anit-Fingerprint-Beschichtung
WO2006134599A1 (fr) 2005-06-15 2006-12-21 Yissum Research Development Company Of The Hebrew University Of Jerusalem Nanocristaux heterocouche a noyau semiconducteur iii-v
DE102005034817A1 (de) 2005-07-26 2007-02-01 Clariant International Limited Verfahren zur Herstellung einer dünnen glasartigen Beschichtung auf Substraten zur Verringerung der Gaspermeation
US8643051B2 (en) * 2009-12-25 2014-02-04 Konica Minolta Advanced Layers, Inc. Light emission device
US20130032768A1 (en) 2010-01-28 2013-02-07 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Phosphor-nanoparticle combinations
JP5607967B2 (ja) 2010-03-25 2014-10-15 東洋ゴム工業株式会社 ポリウレタン塗膜材用硬化剤、及びこれを用いたポリウレタン塗膜材用二液型キット
US8860056B2 (en) 2011-12-01 2014-10-14 Tsmc Solid State Lighting Ltd. Structure and method for LED with phosphor coating
DE102012208287A1 (de) * 2012-05-16 2013-11-21 Osram Gmbh Verfahren zur herstellung eines optischen elements
JP6003799B2 (ja) 2013-05-15 2016-10-05 コニカミノルタ株式会社 ガスバリア性フィルムの製造方法
US9935246B2 (en) 2013-12-30 2018-04-03 Cree, Inc. Silazane-containing materials for light emitting diodes
KR20180051606A (ko) 2015-09-10 2018-05-16 메르크 파텐트 게엠베하 광-변환 물질
MY190747A (en) 2015-10-30 2022-05-12 Merck Patent Gmbh Method for producing silazane-siloxane copolymers and the use of such copolymers
KR20180113579A (ko) 2016-02-15 2018-10-16 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. 실라잔-실록산 랜덤 공중합체, 이의 제조 및 용도
CN105789416B (zh) * 2016-05-05 2018-09-11 易美芯光（北京）科技有限公司 一种多层立体栅格发光层制备工艺及led发光器件

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI705123B (zh) * 2019-10-29 2020-09-21 隆達電子股份有限公司 波長轉換物質以及發光裝置
US11245056B2 (en) 2019-10-29 2022-02-08 Lextar Electronics Corporation Wavelength converting material and light emitting device

Also Published As

Publication number Publication date
WO2019072881A1 (fr) 2019-04-18
EP3695443B1 (fr) 2022-03-23
CN111194485A (zh) 2020-05-22
US20210193879A1 (en) 2021-06-24
US11888095B2 (en) 2024-01-30
EP3695443A1 (fr) 2020-08-19

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