TW201945571A - Producing device of mask integrated frame - Google Patents

Producing device of mask integrated frame Download PDF

Info

Publication number
TW201945571A
TW201945571A TW108113411A TW108113411A TW201945571A TW 201945571 A TW201945571 A TW 201945571A TW 108113411 A TW108113411 A TW 108113411A TW 108113411 A TW108113411 A TW 108113411A TW 201945571 A TW201945571 A TW 201945571A
Authority
TW
Taiwan
Prior art keywords
mask
frame
unit
clamping
template
Prior art date
Application number
TW108113411A
Other languages
Chinese (zh)
Inventor
李炳一
張澤龍
李裕進
Original Assignee
南韓商Tgo科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 南韓商Tgo科技股份有限公司 filed Critical 南韓商Tgo科技股份有限公司
Publication of TW201945571A publication Critical patent/TW201945571A/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20Bonding
    • B23K26/21Bonding by welding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment
    • B23K26/702Auxiliary equipment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本發明涉及一種框架一體型掩模的製造裝置。本發明涉及的框架一體型掩模的製造裝置包括:台部,用於安裝並支撐框架;夾持部,對模板進行夾持,所述模板上黏合並支撐有所述掩模;夾持移動部,沿著X、Y、Z、θ軸中的至少一個方向移動夾持部;頭部,向掩模的焊接部照射激光,並感測掩模的對準狀態;以及頭移動部,沿著X、Y、Z軸中的至少一個方向移動頭部,其中,夾持部以吸附模板的上部表面的至少一部分的方式進行夾持。The invention relates to a device for manufacturing a frame-integrated mask. The device for manufacturing a frame-integrated mask according to the present invention includes: a table portion for mounting and supporting a frame; a clamping portion for clamping a template, the template being adhered to and supporting the mask; and clamping movement The head moves the clamping portion along at least one of the X, Y, Z, and θ axes; the head irradiates the welding portion of the mask with laser light, and senses the alignment state of the mask; and the head moving portion, along the The head is moved in at least one of the X, Y, and Z directions, and the clamping portion is configured to clamp at least a part of the upper surface of the template.

Description

框架一體型掩模的製造裝置Device for manufacturing frame-integrated mask

發明領域
本發明涉及一種框架一體型掩模的製造裝置。更加詳細而言,涉及能夠在掩模沒有變形地情況下,穩定地進行支撐和移動,能夠將掩模與框架形成為一體,並且能夠使各個掩模之間精確地對準(align)的框架一體型掩模的製造裝置。
FIELD OF THE INVENTION The present invention relates to a device for manufacturing a frame-integrated mask. More specifically, it relates to a frame that can stably support and move without deforming the mask, can form the mask into a frame, and can accurately align the masks. Device for manufacturing an integrated mask.

發明背景
作為OLED(有機發光二極體)製造工藝中形成像素的技術,主要使用FMM(Fine Metal Mask,精細金屬掩模)方法,該方法將薄膜形式的金屬掩模(Shadow Mask,陰影掩模)緊貼於基板並且在所需位置上沉積有機物。
BACKGROUND OF THE INVENTION As a technology for forming pixels in an OLED (Organic Light Emitting Diode) manufacturing process, an FMM (Fine Metal Mask, fine metal mask) method is mainly used. This method uses a thin film metal mask (Shadow Mask, shadow mask). ) Close to the substrate and deposit the organics on the desired location.

在現有的OLED製造工藝中,將掩模製造成條狀、板狀等後,將掩模焊接固定到OLED像素沉積框架並使用。一個掩模上可以具備與一個顯示器對應的多個單元。另外,為了製造大面積OLED,可將多個掩模固定於OLED像素沉積框架,在固定於框架的過程中,拉伸各個掩模,以使其變得平坦。調節拉伸力以使掩模的整體部分變得平坦是非常困難的作業。特別是,為了使各個單元全部變得平坦,同時對準尺寸僅為數μm至數十μm的掩模圖案,需要微調施加到掩模各側的拉伸力並且實時確認對準狀態的高度作業要求。In the existing OLED manufacturing process, after the mask is manufactured into a strip shape, a plate shape, etc., the mask is welded and fixed to the OLED pixel deposition frame and used. A plurality of units corresponding to one display may be provided on one mask. In addition, in order to manufacture a large-area OLED, a plurality of masks may be fixed to the OLED pixel deposition frame. During the process of fixing to the frame, each mask is stretched to make it flat. It is very difficult to adjust the tensile force so that the entire portion of the mask becomes flat. In particular, in order to make each unit flat and align a mask pattern having a size of only several μm to several tens μm, it is necessary to fine-tune the tensile force applied to each side of the mask and confirm the high-level operation requirements in real time .

儘管如此,在將多個掩模固定於一個框架過程中,仍然存在掩模之間以及掩模單元之間對準不好的問題。另外,在將掩模焊接固定於框架的過程中,掩模膜的厚度過薄且面積大,因此存在掩模因荷重而下垂或者扭曲的問題,因焊接過程中焊接部分發生褶皺、毛刺(burr)等而使掩模單元的對準交錯的問題等。However, in the process of fixing multiple masks to one frame, there is still a problem of poor alignment between masks and between mask units. In addition, during the process of welding and fixing the mask to the frame, the thickness of the mask film is too thin and the area is large, so there is a problem that the mask sags or twists due to the load, and wrinkles and burrs occur in the welded part during the welding process. ), Etc., and the problem that the alignment of the mask unit is staggered.

在超高清的OLED中,現有的QHD(Quarter High Definition,四分之一高清)畫質為500-600PPI(pixel per inch,每英寸像素),像素的尺寸達到約30-50μm,而4K UHD(Ultra High Definition,超高清)、8K UHD高清具有比之更高的~860PPI,~1600PPI等的分辨率。如此,考慮到超高清的OLED的像素尺寸,需要將各單元之間的對準誤差縮減為數μm程度,超出這一誤差將導致產品的不良,所以收率可能極低。因此,需要開發能夠防止掩模的下垂或者扭曲等變形並且使對準精確的技術,以及將掩模固定於框架的技術等。In ultra-high-definition OLEDs, the current QHD (Quarter High Definition) image quality is 500-600 PPI (pixel per inch), and the pixel size reaches about 30-50 μm, while 4K UHD ( Ultra High Definition (Ultra High Definition) and 8K UHD have higher resolutions of ~ 860PPI, ~ 1600PPI, etc. In this way, considering the pixel size of the ultra-high-definition OLED, it is necessary to reduce the alignment error between the units to several μm, beyond which the product will be defective, so the yield may be extremely low. Therefore, it is necessary to develop a technique capable of preventing deformation of the mask from sagging or twisting, and achieving accurate alignment, a technique of fixing the mask to a frame, and the like.

發明概要
因此,本發明是為了解決上述現有技術中的問題而提出的,其目的在於,提供一種框架一體型掩模的製造裝置,能夠形成掩模與框架的一體型結構。
SUMMARY OF THE INVENTION Accordingly, the present invention has been made in order to solve the above-mentioned problems in the prior art, and an object thereof is to provide a manufacturing apparatus for a frame-integrated mask capable of forming an integrated structure of a mask and a frame.

另外,本發明的目的在於,提供一種框架一體型掩模的製造裝置,能夠防止掩模下垂或者扭曲等變形並且使對準精確。Another object of the present invention is to provide a device for manufacturing a frame-integrated mask, which can prevent deformation of the mask such as sagging or distortion, and enable accurate alignment.

另外,本發明的目的在於,提供一種框架一體型掩模的製造裝置,顯著縮短製造時間,並且顯著提升收率。Another object of the present invention is to provide a manufacturing apparatus of a frame-integrated mask, which significantly shortens the manufacturing time and significantly improves the yield.

另外,本發明的目的在於,提供一種框架一體型掩模的製造裝置,能夠在掩模沒有變形的情況下,穩定地進行支撐和移動。
技術方案
Another object of the present invention is to provide a device for manufacturing a frame-integrated mask, which can stably support and move the mask without deformation.
Technical solutions

本發明的上述目的通過一種框架一體型掩模的製造裝置達成,該裝置包括:台部,用於安裝並支撐框架;夾持部,對模板進行夾持(Gripping),所述模板上黏合並支撐有所述掩模;夾持移動部,沿著X、Y、Z、θ軸中的至少一個方向移動所述夾持部;頭部,向所述掩模的焊接部照射激光,並感測所述掩模的對準狀態;以及頭移動部,沿著X、Y、Z軸中的至少一個方向移動所述頭部,其中,所述夾持部以吸附所述模板的上部表面的至少一部分的方式進行夾持。The above object of the present invention is achieved by a manufacturing device of a frame-integrated mask. The device includes: a table portion for mounting and supporting a frame; a clamping portion for gripping a template, and the template is glued together. The mask is supported; the moving part is clamped to move the clamping part along at least one of the X, Y, Z, and θ axes; the head part is irradiated with laser light to the welding part of the mask, and the Measuring the alignment state of the mask; and a head moving part that moves the head along at least one of the X, Y, and Z directions, wherein the clamping part is configured to attract an upper surface of the template. At least part of the way to clamp.

所述台部可以包括用於對準所述框架的位置的框架對準單元。The stage portion may include a frame alignment unit for aligning a position of the frame.

所述台部可以包括用於加熱所述框架的加熱單元。The stage portion may include a heating unit for heating the frame.

所述夾持部可以包括:夾持單元,用於夾持所述模板;夾持移動單元,沿著X、Y、Z、θ軸中的至少一個方向移動所述夾持單元;以及連接單元,將所述夾持移動單元連接到所述夾持移動部。The clamping unit may include: a clamping unit for clamping the template; a clamping moving unit that moves the clamping unit along at least one of the X, Y, Z, and θ axes; and a connection unit , Connecting the clamping moving unit to the clamping moving part.

所述夾持單元可以形成有彼此隔開的多個吸附單元,多個所述吸附單元用於對所述模板施加吸壓。The clamping unit may be formed with a plurality of adsorption units spaced apart from each other, and the plurality of adsorption units are configured to apply suction pressure to the template.

多個所述吸附單元可以配置成與所述掩模的焊接部在Z軸上的區域不重疊。A plurality of the adsorption units may be arranged so as not to overlap the region on the Z axis of the welding portion of the mask.

所述夾持移動部包括:基座單元;夾持支撐單元,配置在所述基座單元上以支撐所述夾持部;以及夾持軌道單元,用於移動所述基座單元,其中,所述基座單元可以在沿著Z軸方向與所述台部隔開的區域內移動,使得所述夾持部進入到所述台部的上部。The grip moving unit includes: a base unit; a grip supporting unit configured on the base unit to support the grip; and a grip track unit for moving the base unit, wherein, The base unit can be moved in a region spaced from the stage portion along the Z-axis direction so that the clamping portion enters an upper portion of the stage portion.

所述頭部可以包括激光單元,所述激光單元對所述掩模照射激光,以將所述掩模與所述框架進行焊接,或者對所述掩模照射激光,以進行激光修整(trimming)。The head may include a laser unit that irradiates the mask with laser light to weld the mask to the frame, or irradiates the mask with laser light to perform laser trimming .

一對所述激光單元彼此隔開配置,各個所述激光單元分別對所述掩模的一側及另一側的焊接部照射激光。A pair of the laser units are spaced apart from each other, and each of the laser units irradiates laser light to the soldering portions on one side and the other side of the mask, respectively.

所述框架可以包括:邊緣框架部,其包括中空區域;掩模單元片材部,具備多個掩模單元區域,並且連接於所述邊緣框架部。The frame may include an edge frame portion including a hollow region, and a mask unit sheet portion including a plurality of mask unit regions and connected to the edge frame portion.

所述框架可以沿著第一方向以及垂直於第一方向的第二方向中的至少一個方向,具備多個所述掩模單元區域。The frame may include a plurality of the mask unit regions along at least one of a first direction and a second direction perpendicular to the first direction.

多個吸附孔形成在具有所述掩模單元區域的掩模單元片材部的與角部隔開規定距離的部分。A plurality of suction holes are formed in a portion of the mask unit sheet portion having the mask unit region at a predetermined distance from the corner portion.

所述台部可以進一步包括下部支撐單元,所述下部支撐單元對所述框架的下部產生吸壓。The table portion may further include a lower support unit that generates a suction pressure on a lower portion of the frame.

所述下部支撐單元形成有至少一個真空流路,所述真空流路可以將從外部的吸壓產生裝置生成的吸壓傳遞到所述吸附孔。The lower support unit is formed with at least one vacuum flow path, and the vacuum flow path can transmit the suction pressure generated from an external suction pressure generating device to the suction hole.

所述掩模上形成有掩模圖案,所述掩模可以通過臨時黏合部黏合在所述模板上。
發明效果
A mask pattern is formed on the mask, and the mask may be adhered to the template through a temporary adhesive portion.
Invention effect

根據如上構成的本發明,掩模和框架能夠形成一體型結構。According to the present invention configured as described above, the mask and the frame can form an integrated structure.

另外,根據本發明,能夠防止掩模下垂或者扭曲等的變形,並且使對準精確。In addition, according to the present invention, it is possible to prevent deformation of the mask from sagging or twisting, and to make alignment accurate.

另外,根據本發明,能夠顯著縮短製造時間,並且顯著提升收率。In addition, according to the present invention, the manufacturing time can be significantly shortened, and the yield can be significantly improved.

另外,根據本發明,能夠在掩模沒有變形的情況下,穩定地進行支撐和移動。In addition, according to the present invention, it is possible to stably support and move without deforming the mask.

較佳實施例之詳細說明
後述的對於本發明的詳細說明將參照附圖,該附圖將能夠實施本發明的特定實施例作為示例示出。充分詳細地說明這些實施例,以使本領域技術人員能夠實施本發明。應當理解,本發明的多種實施例雖然彼此不同,但是不必相互排斥。例如,在此記載的特定形狀、結構及特性與一實施例有關,在不脫離本發明的精神及範圍的情況下,能夠實現為其他實施例。另外,應當理解,各個公開的實施例中的個別構成要素的位置或配置,在不脫離本發明的精神及範圍的情況下,能夠進行變更。因此,後述的詳細說明不應被視為具有限制意義,只要適當地說明,則本發明的範圍僅由所附的申請專利範圍及其等同的所有範圍限定。圖中相似的附圖標記從多方面表示相同或相似的功能,為了方便起見,長度、面積、厚度及其形狀可以誇大表示。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The detailed description of the present invention described later will be described with reference to the accompanying drawings, which show specific embodiments capable of implementing the invention as examples. These embodiments are described in sufficient detail to enable those skilled in the art to implement the invention. It should be understood that although various embodiments of the present invention are different from each other, they are not necessarily mutually exclusive. For example, the specific shapes, structures, and characteristics described herein are related to one embodiment, and can be implemented in other embodiments without departing from the spirit and scope of the invention. In addition, it should be understood that the position or arrangement of individual constituent elements in each disclosed embodiment can be changed without departing from the spirit and scope of the present invention. Therefore, the detailed description described below should not be regarded as limiting. As long as it is properly described, the scope of the present invention is limited only by the scope of the attached patent application and all equivalent scopes thereof. Similar reference numerals in the figure represent the same or similar functions from various aspects. For convenience, the length, area, thickness, and shape can be exaggerated.

以下,將參照附圖對本發明的優選實施例進行詳細說明,以便本領域技術人員能夠容易地實施本發明。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art can easily implement the present invention.

圖1以及圖2是將現有的掩模1黏合到框架2上的過程的概略圖。圖3是將現有的掩模1拉伸F1~F2的過程中,發生單元C1~C3之間的對準誤差的概略圖。FIG. 1 and FIG. 2 are schematic diagrams of a process of bonding a conventional mask 1 to a frame 2. FIG. 3 is a schematic diagram of an alignment error between the cells C1 to C3 during the process of stretching the conventional mask 1 by F1 to F2.

參照圖1,現有的掩模1可以以條式(Stick-Type)或者板式(Plate-Type)製造。圖1中示出的掩模1作為條式掩模,可以將條的兩側焊接固定於OLED像素沉積框架2並使用。Referring to FIG. 1, the existing mask 1 may be manufactured in a stick-type or a plate-type. The mask 1 shown in FIG. 1 is used as a stripe mask, and both sides of the stripe can be welded and fixed to the OLED pixel deposition frame 2 and used.

在掩模1的主體(Body,或者掩模膜1a)中,具備多個顯示單元C。一個單元C與智能手機等的一個顯示器對應。單元C中形成有像素圖案P,以便與顯示器的各個像素對應。放大單元C時,顯示與R、G、B對應的多個像素圖案P。作為一例,在單元C中形成有像素圖案P,以便具有70×140分辨率。即,大量的像素圖案P形成集合,以構成一個單元C,並且多個單元C可以形成於掩模1。以下對於具備6個單元C(C1~C6)的條式掩模1進行舉例說明。The main body (body or mask film 1a) of the mask 1 includes a plurality of display units C. One unit C corresponds to one display such as a smartphone. A pixel pattern P is formed in the unit C so as to correspond to each pixel of the display. When the unit C is enlarged, a plurality of pixel patterns P corresponding to R, G, and B are displayed. As an example, a pixel pattern P is formed in the cell C so as to have a resolution of 70 × 140. That is, a large number of pixel patterns P are formed to form a unit C, and a plurality of units C may be formed on the mask 1. In the following, a strip mask 1 having six cells C (C1 to C6) will be described by way of example.

參照圖1的(a)、圖2的(a)以及圖2的(b),首先,應將條式掩模1平坦地展開。在中間隔著框架2且對置的一對夾持器3夾持(clamping)掩模1的兩側,並且隨著沿掩模1的長軸方向施加拉伸力F1~F2進行拉伸,掩模1平坦地被展開。並且,沿著佔有框架2外側的y軸移動軌道4,夾持器3移動到與框架2對應的位置。框架2的尺寸可以是足以使條式掩模1的單元C1~C6位於框內部空白區域,其尺寸也可以是足以使多個條式掩模1的單元C1~C6位於框內部空白區域。Referring to FIG. 1 (a), FIG. 2 (a), and FIG. 2 (b), first, the strip mask 1 should be unfolded flat. A pair of opposing grippers 3 which are spaced apart from each other between the frame 2 are clamped on both sides of the mask 1 and stretched by applying tensile forces F1 to F2 along the major axis direction of the mask 1, The mask 1 is unfolded flat. Then, the rail 4 is moved along the y-axis occupying the outside of the frame 2, and the holder 3 is moved to a position corresponding to the frame 2. The size of the frame 2 may be sufficient to allow the cells C1 to C6 of the stripe mask 1 to be located in a blank area inside the frame, and the size of the frame 2 may be sufficient to allow the cells C1 to C6 of the plurality of stripe masks 1 to be located in a blank area inside the frame.

其次,參照圖2的(c),在一對夾持器3沿著Z軸移動軌道5下降,以將掩模1拉伸的狀態下,將掩模裝載在方框形狀的框架2上。掩模1的單元C1~C6將位於框架2的框內部空白區域部分。框架2的尺寸可以是足以使一個掩模1的單元C1~C6位於框內部空白區域,其尺寸也可以是足以使多個掩模1的單元C1~C6位於框內部空白區域。Next, referring to FIG. 2 (c), the mask 1 is mounted on the frame 2 in a rectangular shape while the pair of holders 3 are lowered along the Z-axis moving rail 5 to stretch the mask 1. The cells C1 to C6 of the mask 1 will be located in a blank area inside the frame of the frame 2. The size of the frame 2 may be sufficient to allow cells C1 to C6 of one mask 1 to be located in a blank area inside the frame, and the size of the frame 2 may be sufficient to allow cells C1 to C6 of multiple masks 1 to be located in a blank area inside the frame.

其次,參照圖1的(b)以及圖2的(d),微調施加到掩模1的各側的拉伸力F1~F2並進行對準後,隨著用激光L等焊接W掩模1側面的一部分,將掩模1和框架2彼此連接。並且,夾持器3解除對掩模1的夾持。圖1的(c)是示出彼此連接的掩模1和框架2的側截面。Next, referring to FIGS. 1 (b) and 2 (d), after finely adjusting and aligning the tensile forces F1 to F2 applied to each side of the mask 1, the W mask 1 is welded with a laser L or the like. A part of the side surface connects the mask 1 and the frame 2 to each other. Then, the holder 3 releases the holding of the mask 1. (C) of FIG. 1 is a side section showing the mask 1 and the frame 2 connected to each other.

參照圖3,儘管微調施加到條式掩模1的各側的拉伸力F1~F2,但是顯示出掩模單元C1~C3彼此之間對準不好的問題。例如,單元C1~C3的圖案P之間的距離D1~D1''、D2~D2''彼此不同,或者圖案P歪斜。由於條式掩模1具有包括多個(作為一例,為6個)單元C1~C6的大面積,並且具有數十μm的非常薄的厚度,所以容易因荷重而下垂或者扭曲。另外,調節拉伸力F1~F2,以使各個單元C1~C6全部變得平坦,同時通過顯微鏡實時確認各個單元C1~C6之間的對準狀態是非常困難的作業。Referring to FIG. 3, although the tensile forces F1 to F2 applied to the sides of the stripe mask 1 are fine-tuned, the problem that the mask units C1 to C3 are not aligned with each other is shown. For example, the distances D1 to D1 ″, D2 to D2 ″ between the patterns P of the cells C1 to C3 are different from each other, or the patterns P are skewed. Since the stripe mask 1 has a large area including a plurality of (for example, six) cells C1 to C6 and has a very thin thickness of several tens of μm, it is easy to sag or twist due to a load. In addition, it is very difficult to adjust the tensile forces F1 to F2 so that all the units C1 to C6 become flat, and at the same time to confirm the alignment state between the units C1 to C6 through the microscope in real time.

因此,拉伸力F1~F2的微小誤差可能引起條式掩模1各單元C1~C3的拉伸或者展開程度的誤差,由此,導致掩模圖案P之間的距離D1~D1''、D2~D2''不同。雖然完美地對準以使誤差為0是非常困難的,但是為了避免尺寸為數μm至數十μm的掩模圖案P對超高清OLED的像素工藝造成壞影響,優選對準誤差不大於3μm。將如此相鄰的單元之間的對準誤差稱為像素定位精度(pixel position accuracy,PPA)。Therefore, a slight error in the tensile forces F1 to F2 may cause an error in the stretching or unfolding degree of each unit C1 to C3 of the strip mask 1, thereby causing the distance D1 to D1 between the mask patterns P, D2 ~ D2 '' are different. Although it is very difficult to perfectly align so that the error is zero, in order to avoid the mask pattern P having a size of several μm to several tens μm from adversely affecting the pixel process of the ultra-high-definition OLED, it is preferable that the alignment error is not greater than 3 μm. The alignment error between such adjacent units is referred to as pixel position accuracy (PPA).

另外,將大概6-20個條式掩模1分別連接在一個框架2,同時使多個條式掩模1之間,以及條式掩模1的多個單元C-C6之間的對準狀態精確是非常困難的作業,並且只能增加基於對準的工藝時間,這成為降低生產性的重要理由。In addition, approximately 6-20 stripe masks 1 are connected to a frame 2 respectively, and alignment between a plurality of stripe masks 1 and a plurality of cells C-C6 of the stripe mask 1 are simultaneously performed. Precise state is a very difficult task and can only increase the process time based on alignment, which is an important reason for reducing productivity.

另一方面,將條式掩模1連接固定到框架2後,施加到條式掩模1的拉伸力F1~F2能夠反向地作用於框架2。即,由於拉伸力F1~F2而繃緊拉伸的條式掩模1連接在框架2後,能夠將張力(tension)作用於框架2。通常,該張力不大,不會對框架2產生大的影響,但是在框架2的尺寸實現小型化且強度變低的情況下,這種張力可能使框架2細微變形。如此,可能發生破壞多個單元C~C6間的對準狀態的問題。On the other hand, after the stripe mask 1 is connected and fixed to the frame 2, tensile forces F1 to F2 applied to the stripe mask 1 can be reversely applied to the frame 2. That is, after the strip mask 1 stretched and stretched due to the tensile forces F1 to F2 is connected to the frame 2, a tension can be applied to the frame 2. Generally, this tension is not large and does not have a large effect on the frame 2. However, when the size of the frame 2 is reduced in size and the strength becomes low, the tension may slightly deform the frame 2. As such, a problem may occur in which the alignment state between the plurality of cells C to C6 is destroyed.

鑒於此,本發明提出能夠使掩模100與框架200形成一體型結構的框架200以及框架一體型掩模。與框架200形成一體的掩模100能夠防止下垂或者扭曲等變形,並且精確地對準於框架200。當掩模100連接到框架200時,不對掩模100施加任何拉伸力,因此掩模100連接到框架200後,可以不對掩模200施加引起變形的張力。並且,能夠顯著地縮短將掩模100一體地連接到框架200的製造時間,並且顯著提升收率。In view of this, the present invention proposes a frame 200 and a frame-integrated mask capable of forming the mask 100 and the frame 200 into an integrated structure. The mask 100 integrated with the frame 200 can prevent deformation such as sagging or distortion, and can be accurately aligned with the frame 200. When the mask 100 is connected to the frame 200, no tensile force is applied to the mask 100. Therefore, after the mask 100 is connected to the frame 200, the mask 200 may not be subjected to a tension that causes deformation. Also, it is possible to significantly shorten the manufacturing time of integrally connecting the mask 100 to the frame 200 and significantly improve the yield.

圖4是本發明的一實施例涉及的框架一體型掩模的主視圖(圖4的(a))以及側剖視圖(圖4的(b)),圖5是本發明的一實施例涉及的框架的主視圖(圖5的(a))以及側剖視圖(圖5的b)。4 is a front view ((a) of FIG. 4) and a side cross-sectional view ((b) of FIG. 4) of a frame-integrated mask according to an embodiment of the present invention; and FIG. 5 is a view of an embodiment of the present invention. A front view ((a) of FIG. 5) and a side cross-sectional view (b) of the frame.

參照圖4以及圖5,框架一體型掩模可以包括多個掩模100以及一個框架200。換句話說,將多個掩模100分別黏合於框架200的形態。以下,為了便於說明,以四角形狀的掩模100為例進行說明,但是掩模100在黏合於框架200之前,可以是兩側具備用於夾持的突出部的條式掩模形狀,黏合於框架200後,可以去除突出部。4 and 5, the frame-integrated mask may include a plurality of masks 100 and a frame 200. In other words, the plurality of masks 100 are each adhered to the frame 200. In the following, for convenience of explanation, a quadrangular mask 100 is used as an example for explanation. Before the mask 100 is adhered to the frame 200, the mask 100 may have a stripe mask shape with protrusions on both sides for clamping. After the frame 200, the protruding portion can be removed.

各個掩模100形成有多個掩模圖案P,一個掩模100可以形成有一個單元C。一個掩模單元C可以與智能手機等的一個顯示器對應。Each mask 100 is formed with a plurality of mask patterns P, and one mask 100 may be formed with one cell C. One mask unit C may correspond to one display of a smartphone or the like.

掩模100可以是熱膨脹係數約為1.0×10-6 /℃的因瓦合金(invar)或約為1.0×10-7 /℃的超級因瓦合金(super invar)材料。由於這種材料的掩模100的熱膨脹係數非常低,因熱能而掩模的圖案形狀變形的可能性小,在製造高分辨率的OLED中,可以用作FMM、陰影掩模(Shadow Mask)。此外,考慮到最近開發在溫度變化值不大的範圍內實施像素沉積工藝的技術,掩模100也可以是熱膨脹係數比之略大的鎳(Ni)、鎳-鈷(Ni-Co)等材料。掩模100可以使用軋製(rolling)工藝或者電鑄(electroforming)生成的金屬片材(sheet)。The mask 100 may be an invar having a thermal expansion coefficient of about 1.0 × 10 −6 / ° C. or a super invar material of about 1.0 × 10 −7 / ° C. Since the thermal expansion coefficient of the mask 100 made of this material is very low, the possibility of deformation of the pattern shape of the mask due to thermal energy is small, and it can be used as an FMM and a shadow mask in manufacturing a high-resolution OLED. In addition, in consideration of a recently developed technology for performing a pixel deposition process in a range where a temperature change value is not large, the mask 100 may also be a material having a slightly larger thermal expansion coefficient than nickel (Ni), nickel-cobalt (Ni-Co), or the like. . The mask 100 may use a metal sheet produced by a rolling process or electroforming.

框架200可以以黏合多個掩模100的方式形成。包括最外圍邊緣在內,框架200可以包括沿著第一方向(例如,橫向)、第二方向(例如,豎向)形成的多個角部。這種多個角部可以在框架200上劃分待黏合掩模100的區域。The frame 200 may be formed by bonding a plurality of masks 100. Including the outermost edge, the frame 200 may include a plurality of corners formed in a first direction (for example, a lateral direction) and a second direction (for example, a vertical direction). Such a plurality of corners may divide an area of the mask 200 to be bonded on the frame 200.

框架200可以包括大概呈四角形狀、方框形狀的邊緣框架部210。邊緣框架部210的內部可以是中空形狀。即,邊緣框架部210可以包括中空區域R。框架200可以由因瓦合金、超級因瓦合金、鋁、鈦等金屬材料形成,考慮到熱變形,優選由與掩模具有相同熱膨脹係數的因瓦合金、超級因瓦合金、鎳、鎳-鈷等材料形成,這些材料均可應用於所有作為框架200的構成要素的邊緣框架部210、掩模單元片材部220。The frame 200 may include an edge frame portion 210 having a substantially rectangular shape and a rectangular frame shape. The inside of the edge frame portion 210 may be a hollow shape. That is, the edge frame portion 210 may include a hollow region R. The frame 200 may be formed of a metallic material such as Invar, Super Invar, Aluminum, Titanium. In consideration of thermal deformation, it is preferably made of Invar, Super Invar, Nickel, Nickel-Cobalt having the same thermal expansion coefficient as the mask And other materials, and these materials can be applied to all the edge frame portions 210 and the mask unit sheet portion 220 which are the constituent elements of the frame 200.

另外,框架200具備多個掩模單元區域CR,並且可以包括連接到邊緣框架部210的掩模單元片材部220。掩模單元片材部220可以與掩模100相同地通過軋製形成,或者通過如電鑄使用其他的成膜工藝形成。另外,掩模單元片材部220可以通過激光劃線、蝕刻等在平面狀片材(sheet)上形成多個掩模單元區域CR後,連接到邊緣框架部210。或者,掩模單元片材部220可以將平面狀的片材連接到邊緣框架部210後,通過激光劃線、蝕刻等形成多個掩模單元區域CR。本說明書中主要對首先在掩模單元片材部220形成多個掩模單元區域CR後,連接到邊緣框架部210的情況進行說明。In addition, the frame 200 is provided with a plurality of mask unit regions CR, and may include a mask unit sheet portion 220 connected to the edge frame portion 210. The mask unit sheet portion 220 may be formed by rolling in the same manner as the mask 100, or may be formed by another film forming process such as electroforming. In addition, the mask unit sheet portion 220 may be connected to the edge frame portion 210 after a plurality of mask unit regions CR are formed on a planar sheet by laser scribing, etching, or the like. Alternatively, the mask unit sheet portion 220 may connect a planar sheet to the edge frame portion 210 and then form a plurality of mask unit regions CR by laser scribing, etching, or the like. In this specification, a case where a plurality of mask unit regions CR are first formed in the mask unit sheet portion 220 and then connected to the edge frame portion 210 will be described.

掩模單元片材部220可以包括邊緣片材部221以及第一柵格片材部223、第二柵格片材部225中的至少一種。邊緣片材部221以及第一柵格片材部223、第二柵格片材部225是指在同一片材上劃分的各個部分,它們彼此之間形成為一體。The mask unit sheet portion 220 may include an edge sheet portion 221 and at least one of a first grid sheet portion 223 and a second grid sheet portion 225. The edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225 refer to respective portions divided on the same sheet, and they are formed as one body with each other.

邊緣片材部221可以實質上連接到邊緣框架部210。因此,邊緣片材部221可以具有與邊緣框架部210對應的大致四角形狀、方框形狀。The edge sheet portion 221 may be substantially connected to the edge frame portion 210. Therefore, the edge sheet portion 221 may have a substantially quadrangular shape or a square shape corresponding to the edge frame portion 210.

另外,第一柵格片材部223可以沿著第一方向(橫向)延伸形成。第一柵格片材部223以直線形態形成,其兩端可以連接到邊緣片材部221。當掩模單元片材部220包括多個第一柵格片材部223時,各個第一柵格片材部223優選具有相同的間距。In addition, the first grid sheet portion 223 may be formed to extend in a first direction (lateral direction). The first grid sheet portion 223 is formed in a linear form, and both ends thereof may be connected to the edge sheet portion 221. When the mask unit sheet portion 220 includes a plurality of first grid sheet portions 223, each of the first grid sheet portions 223 preferably has the same pitch.

另外,進一步地,第二柵格片材部225可以沿著第二方向(豎向)延伸形成,第二柵格片材部225以直線形態形成,其兩端可以連接到邊緣片材部221。第一柵格片材部223和第二柵格片材部225可以彼此垂直交叉。當掩模單元片材部220包括多個第二柵格片材部225時,各個第二柵格片材部225優選具有相同的間距。In addition, further, the second grid sheet portion 225 may be formed to extend along the second direction (vertical), the second grid sheet portion 225 is formed in a linear form, and both ends thereof may be connected to the edge sheet portion 221 . The first grid sheet portion 223 and the second grid sheet portion 225 may cross each other perpendicularly. When the mask unit sheet portion 220 includes a plurality of second grid sheet portions 225, each of the second grid sheet portions 225 preferably has the same pitch.

另一方面,第一柵格片材部223之間的間距和第二柵格片材部225之間的間距,可以根據掩模單元C的尺寸而相同或不同。On the other hand, the pitch between the first grid sheet portion 223 and the pitch between the second grid sheet portion 225 may be the same or different depending on the size of the mask unit C.

第一柵格片材部223以及第二柵格片材部225雖然具有薄膜形態的薄的厚度,但是垂直於長度方向的截面的形狀可以是諸如矩形、平行四邊形的四邊形形狀、三角形形狀等,邊、角的一部分可以形成圓形。截面形狀可以在激光劃線、蝕刻等過程中進行調節。Although the first grid sheet portion 223 and the second grid sheet portion 225 have a thin thickness in the form of a film, the shape of a cross section perpendicular to the length direction may be a rectangular shape, a quadrangular shape, a parallelogram, a triangular shape, or the like. A part of the sides and corners can form a circle. The cross-sectional shape can be adjusted during laser scribing and etching.

邊緣框架部210的厚度可以大於掩模單元片材部220的厚度。由於邊緣框架部210負責框架200的整體剛性,可以以數mm至數十cm的厚度形成。The thickness of the edge frame portion 210 may be larger than the thickness of the mask unit sheet portion 220. Since the edge frame portion 210 is responsible for the overall rigidity of the frame 200, it can be formed in a thickness of several mm to several tens of cm.

就掩模單元片材部220而言,實際上製造厚片材的工藝困難,過厚,則有可能在OLED 像素沉積工藝中有機物源600(參照圖20)堵塞通過掩模100的路徑。相反,過薄,則有可能難以確保足以支撐掩模100的剛性。由此,掩模單元片材部220優選比邊緣框架部210的厚度薄,但是比掩模100更厚。掩模單元片材部220的厚度可以約為0.1mm至1mm。並且,第一柵格片材部223、第二柵格片材部225的寬度可以約為1~5mm。The mask unit sheet portion 220 is actually difficult to manufacture a thick sheet, and if it is too thick, the organic matter source 600 (see FIG. 20) may block the path through the mask 100 during the OLED pixel deposition process. Conversely, if it is too thin, it may be difficult to ensure rigidity sufficient to support the mask 100. Accordingly, the mask unit sheet portion 220 is preferably thinner than the edge frame portion 210 but thicker than the mask 100. The thickness of the mask unit sheet portion 220 may be about 0.1 mm to 1 mm. In addition, the width of the first grid sheet portion 223 and the second grid sheet portion 225 may be about 1 to 5 mm.

在平面狀片材中,除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外,可以提供多個掩模單元區域CR(CR11~CR56)。從另一個角度來說,掩模單元區域CR可以是指在邊緣框架部210的中空區域R中,除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外的空白區域。In the planar sheet, in addition to the area occupied by the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225, a plurality of mask unit regions CR (CR11 to CR56) can be provided. . From another perspective, the mask unit region CR may refer to the hollow region R of the edge frame portion 210, except for the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225. A blank area outside the occupied area.

隨著掩模100的單元C與該掩模單元區域CR對應,實際上可以用作通過掩模圖案P沉積OLED的像素的通道。如前所述,一個掩模單元C與智能手機等的一個顯示器對應。一個掩模100中可以形成有用於構成一個單元C的掩模圖案P。或者,一個掩模100具備多個單元C且各個單元C可以與框架200的各個單元區域CR對應,但是為了精確地對準掩模100,需要避免大面積掩模100,優選具備一個單元C的小面積掩模100。或者,也可以是具有多個單元C的一個掩模100與掩模200的一個單元區域CR對應。此時,為了精確地對準,可以考慮具有2-3個單元C的掩模100與掩模200的一個單元區域CR對應。As the cell C of the mask 100 corresponds to the mask cell region CR, it can actually be used as a channel for depositing pixels of the OLED through the mask pattern P. As described above, one mask unit C corresponds to one display such as a smartphone. A mask 100 may be formed with a mask pattern P for forming a unit C. Alternatively, a mask 100 includes multiple cells C and each cell C can correspond to each cell region CR of the frame 200. However, in order to accurately align the mask 100, a large area mask 100 needs to be avoided. Small area mask 100. Alternatively, one mask 100 having a plurality of cells C may correspond to one cell region CR of the mask 200. At this time, in order to accurately align, it is considered that the mask 100 having 2-3 cells C corresponds to one cell region CR of the mask 200.

掩模200具備多個掩模單元區域CR,可以將各個掩模100以各個掩模單元C與各個掩模單元區域CR分別對應的方式黏合。各個掩模100可以包括形成有多個掩模圖案P的掩模單元C以及掩模單元C周邊的虛擬部(相當於除了單元C以外的掩模膜110部分)。虛擬部可以只包括掩模膜110,或者可以包括形成有與掩模圖案P類似形態的規定的虛擬圖案的掩模膜110。掩模單元C與框架200的掩模單元區域CR對應,虛擬部的一部分或者全部可以黏合於框架200(掩模單元片材部220)。由此,掩模100和框架200可以形成一體型結構。The mask 200 includes a plurality of mask unit regions CR, and each mask 100 may be bonded so that each mask unit C and each mask unit region CR correspond to each other. Each mask 100 may include a mask unit C in which a plurality of mask patterns P are formed, and a dummy portion (corresponding to a portion of the mask film 110 other than the unit C) around the mask unit C. The dummy portion may include only the mask film 110 or may include the mask film 110 formed with a predetermined dummy pattern similar to the mask pattern P. The mask unit C corresponds to the mask unit region CR of the frame 200, and a part or all of the dummy portion may be adhered to the frame 200 (the mask unit sheet portion 220). Thereby, the mask 100 and the frame 200 may form an integrated structure.

另一方面,根據另一實施例,框架不是以將掩模單元片材部220黏合於邊緣框架部210的方式製造,而是可以使用在邊緣框架部210的中空區域R部分直接形成與邊緣框架部210成為一體的柵格框架(相當於柵格片材部223、225)的框架。這種形態的框架也包括至少一個掩模單元區域CR,可以使掩模100與掩模單元區域CR對應,以製造框架一體型掩模。On the other hand, according to another embodiment, the frame is not manufactured in such a manner that the mask unit sheet portion 220 is adhered to the edge frame portion 210, but may be directly formed with the edge frame using the hollow region R portion of the edge frame portion 210. The portion 210 is a frame of an integrated grid frame (corresponding to the grid sheet portions 223 and 225). The frame in this form also includes at least one mask unit region CR, and the mask 100 can correspond to the mask unit region CR to manufacture a frame-integrated mask.

以下,對框架一體型掩模的製造過程進行說明。Hereinafter, a manufacturing process of the frame-integrated mask will be described.

首先,可以提供圖4以及圖5中所述的框架200。圖6是本發明的一實施例涉及的框架200的製造過程的概略圖。First, the frame 200 described in FIGS. 4 and 5 may be provided. FIG. 6 is a schematic diagram of a manufacturing process of a frame 200 according to an embodiment of the present invention.

參照圖6的(a),提供邊緣框架部210。邊緣框架部210可以是包括中空區域R的方框形狀。Referring to (a) of FIG. 6, an edge frame portion 210 is provided. The edge frame portion 210 may have a square shape including a hollow region R.

其次,參照圖6的(b),製造掩模單元片材部220。掩模單元片材部220使用軋製、電鑄或者其他的成膜工藝,製造平面狀的片材後,通過激光劃線、蝕刻等,去除掩模單元區域CR部分,從而可以製造。本說明書中,以形成6×5的掩模單元區域CR(CR11~CR56)為例進行說明。可以存在5個第一柵格片材部223以及4個第二柵格片材部225。Next, referring to FIG. 6 (b), a mask unit sheet portion 220 is manufactured. The mask unit sheet portion 220 can be manufactured by using a rolling, electroforming, or other film forming process to manufacture a planar sheet, and then removing the CR portion of the mask unit region by laser scribing, etching, or the like. In this specification, a description is given by taking the formation of a 6 × 5 mask cell region CR (CR11 to CR56) as an example. There may be five first grid sheet portions 223 and four second grid sheet portions 225.

然後,可以將掩模單元片材部220與邊緣框架部210對應。在對應的過程中,可以在拉伸F1~F4掩模單元片材部220的所有側部以使掩模單元片材部220平坦伸展的狀態下,使邊緣片材部221與邊緣框架部210對應。在一側部也能以多個點(作為圖6的(b)的例,1~3個點)夾持掩模單元片材部220並進行拉伸。另一方面,也可以不是所有側部,而是沿著一部分側部方向,拉伸F1、F2掩模單元片材部220。Then, the mask unit sheet portion 220 may correspond to the edge frame portion 210. In the corresponding process, the edge sheet portion 221 and the edge frame portion 210 may be stretched in a state where all the side portions of the F1 to F4 mask unit sheet portion 220 are stretched so that the mask unit sheet portion 220 is flat and stretched. correspond. The mask unit sheet portion 220 can also be stretched by sandwiching the mask unit sheet portion 220 at a plurality of points (as an example of (b) of FIG. 6, 1 to 3 points) on one side. On the other hand, the F1 and F2 mask unit sheet portions 220 may be stretched not in all the side portions but in a part of the side direction.

然後,使掩模單元片材部220與邊緣框架部210對應時,可以將掩模單元片材部220的邊緣片材部221以焊接W方式黏合。優選地,焊接W所有側部,以便掩模單元片材部220牢固地黏合於邊緣框架部210。應當最大限度地接近框架部210的角部側進行焊接W,才能最大限度地減少邊緣框架部210和掩模單元片材部220之間的翹起空間,並提升黏合性。焊接W部分可以以線(line)或者點(spot)形狀生成,具有與掩模單元片材部220相同的材料,並可以成為將邊緣框架部210和掩模單元片材部220連接成一體的媒介。Then, when the mask unit sheet portion 220 is made to correspond to the edge frame portion 210, the edge sheet portion 221 of the mask unit sheet portion 220 may be bonded by welding. Preferably, all side portions are welded so that the mask unit sheet portion 220 is firmly adhered to the edge frame portion 210. Welding should be performed as close to the corner side of the frame portion 210 as possible to minimize the warped space between the edge frame portion 210 and the mask unit sheet portion 220 and improve adhesion. The welding W portion can be generated in a line or spot shape, has the same material as the mask unit sheet portion 220, and can be formed by connecting the edge frame portion 210 and the mask unit sheet portion 220 into one body. medium.

圖7是本發明的另一實施例涉及的框架的製造過程的概略圖。圖6的實施例首先製造具備掩模單元區域CR的掩模單元片材部220後,黏合於邊緣框架部210,而圖7的實施例將平面狀的片材黏合於邊緣框架部210後,形成掩模單元區域CR部分。FIG. 7 is a schematic diagram of a manufacturing process of a frame according to another embodiment of the present invention. The embodiment of FIG. 6 first manufactures a mask unit sheet portion 220 having a mask unit region CR and then adheres it to the edge frame portion 210, while the embodiment of FIG. 7 adheres a planar sheet to the edge frame portion 210. A mask unit region CR portion is formed.

首先,與圖6的(a)相同地提供包括中空區域R的邊緣框架部210。First, the edge frame portion 210 including the hollow region R is provided in the same manner as in (a) of FIG. 6.

然後,參照圖7的(a),可以使平面狀的片材(平面狀的掩模單元片材部220’)與邊緣框架部210對應。掩模單元片材部220’是還未形成掩模單元區域CR的平面狀態。在對應的過程中,可以在拉伸F1~F4掩模單元片材部220’的所有側部以使掩模單元片材部220’平坦伸展狀態下,使其與邊緣框架部210對應。在一側部也能以多個點(作為圖7的(a)的例,1~3個點)夾持單元片材部220’並進行拉伸。另一方面,也可以不是所有側部,而是沿著一部分側部方向,拉伸F1、F2掩模單元片材部220’。Then, referring to (a) of FIG. 7, a planar sheet (planar mask unit sheet portion 220 ′) can be made to correspond to the edge frame portion 210. The mask unit sheet portion 220 'is a planar state in which the mask unit region CR has not been formed. In the corresponding process, all the side portions of the F1 to F4 mask unit sheet portion 220 'may be stretched to make the mask unit sheet portion 220' flat and stretched so as to correspond to the edge frame portion 210. The unit sheet portion 220 'can also be stretched by sandwiching the unit sheet portion 220' at a plurality of points (as an example in Fig. 7 (a), 1 to 3 points). On the other hand, the F1 and F2 mask unit sheet portions 220 'may be stretched not in all the side portions but in a part of the side direction.

然後,使掩模單元片材部220’與邊緣框架部210對應時,可以將掩模單元片材部220’的邊緣部分以焊接W方式進行黏合。優選地,焊接W所有側部,以便掩模單元片材部220’牢固地黏合於邊緣框架部220。應當最大限度地接近邊緣框架部210的角部側進行焊接W,才能最大限度地減少邊緣框架部210和掩模單元片材部220’之間的翹起空間,並提升黏合性。焊接W部分可以以線(line)或者點(spot)形狀生成,與掩模單元片材部220’具有相同材料,並可以成為將邊緣框架部210和掩模單元片材部220’連接成一體的媒介。Then, when the mask unit sheet portion 220 'is made to correspond to the edge frame portion 210, the edge portion of the mask unit sheet portion 220' can be adhered by welding. Preferably, all side portions are welded so that the mask unit sheet portion 220 'is firmly adhered to the edge frame portion 220. Welding should be performed as close to the corner side of the edge frame portion 210 as possible to minimize the warped space between the edge frame portion 210 and the mask unit sheet portion 220 'and improve adhesion. The welding W portion may be generated in a line or spot shape, and has the same material as the mask unit sheet portion 220 ′, and may be a unitary connection between the edge frame portion 210 and the mask unit sheet portion 220 ′. Media.

然後,參照圖7的(b),在平面狀的片材(平面狀的掩模單元片材部220’)上形成掩模單元區域CR。通過激光劃線、蝕刻等,去除掩模單元區域CR部分的片材,從而可以形成掩模單元區域CR。本說明書中,以形成6×5的掩模單元區域CR(CR11~CR56)為例進行說明。當形成掩模單元區域CR時,可以構成掩模單元片材部220,其中,與邊緣框架部210焊接W的部分成為邊緣片材部221,並且具備5個第一柵格片材部223以及4個第二柵格片材部225。Then, referring to FIG. 7 (b), a mask unit region CR is formed on a planar sheet (planar mask unit sheet portion 220 '). The mask unit region CR can be formed by removing a sheet of the CR unit region CR by laser scribing, etching, or the like. In this specification, a description is given by taking the formation of a 6 × 5 mask cell region CR (CR11 to CR56) as an example. When the mask unit region CR is formed, a mask unit sheet portion 220 may be configured, in which a portion welded to the edge frame portion 210 becomes the edge sheet portion 221 and includes five first grid sheet portions 223 and Four second grid sheet portions 225.

圖8以及圖9是本發明的一實施例涉及的框架一體型掩模的製造裝置10的俯視概略圖以及主視概略圖。圖10是本發明的一實施例涉及的框架一體型掩模的製造裝置10的局部放大概略圖。圖8至10中對於框架200具有2×5的掩模單元區域CR(CR11~CR52)進行舉例說明。8 and 9 are a schematic plan view and a front view of a manufacturing apparatus 10 for a frame-integrated mask according to an embodiment of the present invention. FIG. 10 is a partially enlarged schematic view of a manufacturing apparatus 10 for a frame-integrated mask according to an embodiment of the present invention. 8 to 10, the frame 200 has a 2 × 5 mask unit region CR (CR11 to CR52).

參照圖8至10,框架一體型掩模裝置10包括工作台15、台部20、夾持部30、夾持移動部40、頭部60、頭移動部70、隔振器80等。8 to 10, the frame-integrated mask device 10 includes a table 15, a table portion 20, a clamping portion 30, a clamping moving portion 40, a head portion 60, a head moving portion 70, a vibration isolator 80, and the like.

首先,稱為台架(gantry)的工作台15設置在結構物上,該結構物牢固地設置在地面,從而能夠防止外部的振動或者衝擊。為了進行更加可靠的工藝,工作台15的上部表面需精確調平。First, a table 15 called a gantry is provided on a structure, and the structure is firmly installed on the ground, thereby preventing external vibration or impact. In order to perform a more reliable process, the upper surface of the table 15 needs to be precisely leveled.

工作台15上設置有用於安裝並支撐框架200的台部20。台部20可以包括裝載部21、框架對準單元23以及框架支撐單元25。另外,還可以進一步包括加熱單元(未圖示)、背光單元(未圖示)。The table 15 is provided with a table portion 20 for mounting and supporting the frame 200. The stage portion 20 may include a loading portion 21, a frame alignment unit 23, and a frame support unit 25. In addition, it may further include a heating unit (not shown) and a backlight unit (not shown).

裝載部21可以與台部20的主體對應,可以具有寬板形態,從而可以提供裝載框架200的區域。工作台15上可以進一步包括台移動部27,台移動部27可以沿著X、Y、Z、θ軸中的至少一個方向移動台部20(或者,裝載部21)。θ軸方向可以是指在XY平面、YZ平面、XZ平面上旋轉的角度。圖8以及圖9中示出台移動部27呈軌道形態,以便能夠沿著Y軸方向移動裝載部21。但是,並非限定於此,可以使用軌道形態、傳送帶形態、鉸鏈形態、電機、齒輪等公知的移動/旋轉設備,以便能夠沿著不同方向進行移動/旋轉。The loading section 21 may correspond to the main body of the table section 20 and may have a wide plate shape, so that an area for loading the frame 200 can be provided. The table 15 may further include a table moving portion 27, and the table moving portion 27 may move the table portion 20 (or the loading portion 21) in at least one of the X, Y, Z, and θ directions. The θ-axis direction may refer to an angle of rotation on the XY plane, the YZ plane, and the XZ plane. 8 and 9 show that the stage moving section 27 has a track shape so that the loading section 21 can be moved in the Y-axis direction. However, the present invention is not limited to this, and known moving / rotating devices such as a rail shape, a belt shape, a hinge shape, a motor, and a gear may be used so as to be able to move / rotate in different directions.

框架對準單元23可以配置在框架支撐部25或者框架200的各側面、各角部,以對準框架200的位置。The frame alignment unit 23 may be disposed on each side and corner of the frame support portion 25 or the frame 200 to align the position of the frame 200.

框架支撐單元25可以具有與框架200相似的方框形態,以便能夠安裝並支撐框架200,並且可以配置在裝載部21或者框架對準部23上。框架支撐單元25可以在掩模100黏合於框架200的工序中防止邊緣框架部210以及掩模單元片材部220因張力而變形。框架支撐單元25可以配置成從框架200的下部緊貼到框架200。框架支撐單元25上表面可以形成有以緊密配合方式插入邊緣框架部210以及柵格框架部220的多個槽,槽內可以插入安裝框架200。因此,即使在因掩模黏合於框架200而施加張力的狀態下,也能夠防止框架200的變形。框架支撐單元25也可以是與圖17中將要後述的下部支撐單元90形成一體的結構。The frame support unit 25 may have a frame shape similar to the frame 200 so that the frame 200 can be mounted and supported, and may be disposed on the loading portion 21 or the frame alignment portion 23. The frame supporting unit 25 can prevent the edge frame portion 210 and the mask unit sheet portion 220 from being deformed by tension during the process of adhering the mask 100 to the frame 200. The frame supporting unit 25 may be configured to abut against the frame 200 from a lower portion of the frame 200. The upper surface of the frame supporting unit 25 may be formed with a plurality of grooves that are inserted into the edge frame portion 210 and the grid frame portion 220 in a close fit manner, and the mounting frame 200 may be inserted into the grooves. Therefore, the frame 200 can be prevented from being deformed even in a state where tension is applied due to the mask being stuck to the frame 200. The frame support unit 25 may have a structure integrally formed with a lower support unit 90 described later in FIG. 17.

其後,在相鄰的單元C上又黏合掩模100時,相鄰的多個掩模100對於配置在其之間的框架200施加相反的力,其結果,施加到框架200的張力能夠被抵消。在抵消這種張力以前,即,只黏合一個掩模100時,隨著框架支撐單元25安裝並收納框架200,可以防止在掩模100黏合工序中框架200的變形。Thereafter, when the mask 100 is adhered to the adjacent unit C, the adjacent masks 100 apply opposite forces to the frame 200 disposed therebetween. As a result, the tension applied to the frame 200 can be applied. offset. Until such a tension is canceled, that is, when only one mask 100 is adhered, the frame 200 can be prevented from being deformed in the mask 100 adhesion process as the frame support unit 25 is mounted and stored.

將掩模100黏合到框架200上的工序中,加熱單元(未圖示)可控制工藝溫度,或者加熱框架。In the step of bonding the mask 100 to the frame 200, a heating unit (not shown) can control a process temperature or heat the frame.

隨著背光單元(未圖示)朝向垂直上部(Z軸)方向發光,可以有助於頭部60的相機單元65確認掩模圖案P的對準形態。朝向垂直上部方向發光,可以使用直接發光的透過型,以及朝向垂直下部方向發設的光經反射後,朝向上部方向發光的反射型等。As the backlight unit (not shown) emits light in a vertical upper (Z-axis) direction, the camera unit 65 of the head 60 can help confirm the alignment pattern of the mask pattern P. The light emitting toward the vertical upper direction can be a transmissive type that emits light directly, and a reflection type that emits light toward the upper direction after reflecting light emitted toward the vertical lower direction.

夾持部30包括夾持單元31、夾持移動單元35、連接單元37。夾持部30可以對模板50進行夾持,所述模板50上黏合並支撐有掩模100。此時,夾持可以通過吸附模板50的上部表面的至少一部分而進行。或者,夾持可以包括在對掩模100沒有影響的範圍內固定模板50的一部分而進行。The clamping unit 30 includes a clamping unit 31, a clamping moving unit 35, and a connection unit 37. The clamping portion 30 can clamp the template 50, and the template 50 is adhered to and supports the mask 100. At this time, the clamping may be performed by sucking at least a part of the upper surface of the template 50. Alternatively, the clamping may be performed by fixing a part of the template 50 within a range that does not affect the mask 100.

夾持單元31可以以吸附模板50的上部表面的方式進行夾持。夾持單元31在XY平面形成為水平的形狀,其下部表面形成有多個吸附單元32。The gripping unit 31 can grip the upper surface of the template 50. The holding unit 31 is formed in a horizontal shape on the XY plane, and a plurality of suction units 32 are formed on a lower surface thereof.

吸附單元32可以單獨地連接到夾持單元31的下部,或者可以是在夾持單元31中以吸附孔形態形成的部分。隨著通過吸附單元32對模板50的上部表面施加吸壓,模板50可以吸附於夾持單元31的下部表面。雖然對吸附單元32的配置形態沒有限制,但是優選與掩模100的焊接部(進行激光焊接的區域)在Z軸上的區域不重疊,以防止阻擋激光的進入路徑。The adsorption unit 32 may be separately connected to a lower portion of the clamping unit 31 or may be a portion formed in the form of an adsorption hole in the clamping unit 31. As suction pressure is applied to the upper surface of the template 50 by the suction unit 32, the template 50 may be suctioned onto the lower surface of the clamping unit 31. Although there is no limitation on the arrangement form of the adsorption unit 32, it is preferable not to overlap the region on the Z axis of the welding portion (the region where the laser welding is performed) of the mask 100 to prevent the laser light from entering the path.

夾持移動單元35可沿著X、Y、Z、θ軸中的至少一個方向移動夾持單元31。本發明中,由於由夾持移動部40代替夾持單元31在X軸以及Y軸方向上的移動,因此,假設夾持移動單元沿著Z、θ軸的方向進行移動,並對此進行說明。夾持移動單元35可以不限定地使用可以沿著不同方向移動/旋轉的公知的移動/旋轉設備。另一方面,可以進一步包括用於連接夾持單元31和夾持移動單元35的輔助單元33。The clamp moving unit 35 can move the clamp unit 31 in at least one of the X, Y, Z, and θ axes. In the present invention, the gripping and moving unit 40 replaces the movement of the gripping unit 31 in the X-axis and Y-axis directions. Therefore, it is assumed that the gripping and moving unit moves in the directions of the Z and θ axes, and this will be described. . The clamp moving unit 35 may use a known moving / rotating device that can move / rotate in different directions without limitation. On the other hand, an auxiliary unit 33 for connecting the clamping unit 31 and the clamping moving unit 35 may be further included.

連接單元37可以將夾持移動單元35連接在夾持移動部40(或者夾持支撐單元43)上。The connection unit 37 may connect the clamp moving unit 35 to the clamp moving portion 40 (or the clamp support unit 43).

夾持移動部40可沿著X、Y、Z、θ軸中的至少一個方向移動夾持部30。其中,應理解,移動除了將夾持部30固定在夾持移動部40的狀態下,夾持移動部40沿著X、Y、Z、θ軸中的至少一個方向移動,以使夾持部30一同移動的概念以外,還可以包括在夾持移動部40不移動的狀態下,只移動夾持部30的概念。本發明中,假設夾持移動部40沿著夾持部30的X、Y軸方向進行移動,並且夾持移動單元35或者夾持支撐單元43沿著夾持部30的Z、θ軸方向進行移動,並對此進行說明。The clamp moving portion 40 can move the clamp portion 30 in at least one of the X, Y, Z, and θ axes. It should be understood that, in addition to the state in which the gripping portion 30 is fixed to the gripping moving portion 40, the gripping moving portion 40 moves along at least one of the X, Y, Z, and θ axes to move the gripping portion. The concept of 30 moving together may also include the concept of moving only the gripping part 30 in a state where the gripping moving part 40 is not moving. In the present invention, it is assumed that the gripping and moving portion 40 moves along the X and Y axis directions of the gripping portion 30 and the gripping and moving unit 35 or gripping support unit 43 moves along the Z and θ axis directions of the gripping portion 30 Move and explain this.

夾持移動部40可包括基座單元41、夾持支撐單元43、夾持軌道單元45。The clamp moving portion 40 may include a base unit 41, a clamp support unit 43, and a clamp rail unit 45.

基座單元41為寬板形態,上部可以提供用於配置夾持支撐單元43的空間。並且,其兩側部連接在夾持軌道單元45上,從而可以沿著夾持軌道單元45的形成方向移動。The base unit 41 has a wide plate shape, and a space for arranging the clamping and supporting unit 43 may be provided in the upper portion. In addition, both side portions thereof are connected to the clamping rail unit 45 so as to be movable along the forming direction of the clamping rail unit 45.

夾持支撐單元43配置在基座單元41上,從而可以支撐夾持部30。夾持支撐單元43可沿著形成在基座單元41上的基座軌道單元44的形成方向移動。The clamp support unit 43 is disposed on the base unit 41 so that the clamp portion 30 can be supported. The clamp support unit 43 is movable along the formation direction of the base rail unit 44 formed on the base unit 41.

夾持軌道單元45可以沿著台部20(或者,裝載部21)的形成方向形成在台部20的兩側,並且基座單元41可以在夾持軌道單元45上移動。The clamping rail unit 45 may be formed on both sides of the table portion 20 along the formation direction of the table portion 20 (or the loading portion 21), and the base unit 41 may be moved on the clamping rail unit 45.

根據一實施例,台部20大致沿著X軸方向形成,在台部20的長邊部分,可以沿著X軸方向形成有一對夾持軌道單元45。並且,基座單元41沿著Y軸方向延伸形成,其兩端分別連接在一對夾持軌道單元45,從而可以沿著X軸方向移動。並且,在基座單元41上沿著Y軸方向形成有基座軌道單元44,夾持支撐單元43連接在基座軌道單元44上,從而可以沿著Y軸方向移動。According to an embodiment, the stage portion 20 is formed substantially along the X-axis direction, and a pair of clamping rail units 45 may be formed along the X-axis direction on a long side portion of the stage portion 20. In addition, the base unit 41 is formed to extend along the Y-axis direction, and its two ends are respectively connected to a pair of clamping rail units 45 so as to be movable along the X-axis direction. In addition, a base rail unit 44 is formed on the base unit 41 along the Y-axis direction, and the clamp support unit 43 is connected to the base rail unit 44 so as to be movable in the Y-axis direction.

可以在台部20的左側部分上配置有框架200,並且在右側部分上配置有夾持部30以及夾持移動部40。基座單元41和台部20在Z軸上彼此隔開。因此,即使基座單元41通過夾持軌道單元45沿著X軸方向移動到左側的配置有框架200的區域,框架200和基座單元41也可以彼此不干涉。由此,可以使由支撐於基座單元41上的夾持部30夾持的託盤50與框架200上的特定單元區域CR對應。The frame 200 may be disposed on the left portion of the table portion 20, and the clamping portion 30 and the clamping moving portion 40 may be disposed on the right portion. The base unit 41 and the stage portion 20 are spaced apart from each other on the Z axis. Therefore, even if the base unit 41 is moved to the area on the left side where the frame 200 is arranged by the clamp rail unit 45 in the X-axis direction, the frame 200 and the base unit 41 may not interfere with each other. Accordingly, the tray 50 held by the holding unit 30 supported on the base unit 41 can be made to correspond to the specific unit region CR on the frame 200.

頭部60配置在台部20、夾持部30的上部。頭部60設置有激光單元61(61a、61b)、相機單元65、間隙感測器(gap sensor)、不良分析單元67等。The head 60 is disposed on the upper portion of the table portion 20 and the clamping portion 30. The head 60 is provided with a laser unit 61 (61a, 61b), a camera unit 65, a gap sensor, a failure analysis unit 67, and the like.

激光單元61可以生成用於焊接掩模和框架200的激光L。或者,激光單元61也可以生成對掩模100照射以進行激光修整的切割激光。一對激光單元61(61a、61b)彼此對置,並且可以設置成能夠調整X、Y軸上的位置。隔開的距離可以與掩模100的左側焊接部和右側焊接部的距離對應。當為了將掩模黏合到框架200上而照射激光L時,不需要分別對掩模100的左側/右側焊接部照射激光L,可以通過一次性照射激光L來進行焊接。由此,掩模100的兩側同時黏合到框架200上,因此相比於每次黏合一側的工藝,能夠縮短工藝時間,並且將掩模100在不變形的情況下穩定地黏合到框架200上。The laser unit 61 may generate a laser L for welding the mask and the frame 200. Alternatively, the laser unit 61 may generate a cutting laser that irradiates the mask 100 for laser trimming. A pair of laser units 61 (61a, 61b) are opposed to each other, and can be set to be able to adjust the positions on the X and Y axes. The spaced-apart distance may correspond to the distance between the left welding portion and the right welding portion of the mask 100. When the laser light L is irradiated in order to adhere the mask to the frame 200, it is not necessary to irradiate the laser light L to the left / right welding portion of the mask 100 separately, but the welding can be performed by irradiating the laser L at one time. As a result, both sides of the mask 100 are adhered to the frame 200 at the same time. Therefore, compared with the process of adhering one side each time, the process time can be shortened, and the mask 100 can be stably adhered to the frame 200 without being deformed. on.

相機單元65可以拍攝並感測掩模100、掩模圖案P的對準狀態。間隙感測器單元可以測量Z軸移位,或者頭部60與掩模100、框架200等之間的距離。不良分析單元可以檢測掩模100的不良狀態。The camera unit 65 can capture and sense the alignment state of the mask 100 and the mask pattern P. The gap sensor unit can measure the Z-axis shift, or the distance between the head 60 and the mask 100, the frame 200, and the like. The failure analysis unit can detect a failure state of the mask 100.

頭移動部70(71、75)可以沿著X、Y、Z、θ軸中的至少一個方向移動頭部60。本發明中,假設頭移動部70僅沿著X軸移動頭部60,並對此進行說明。第一頭移動部71連接有頭部60的上部,從而接受移動動力,在與第一頭移動部71的下部隔開設置的第二頭移動部75上,連接有頭部60的主要結構,可被引導沿著X軸引導件76在X軸方向上移動。The head moving section 70 (71, 75) can move the head 60 in at least one of the X, Y, Z, and θ directions. In the present invention, it is assumed that the head moving section 70 moves the head 60 only along the X axis, and this will be described. The first head moving part 71 is connected to the upper part of the head 60 so as to receive moving power. The main structure of the head 60 is connected to the second head moving part 75 provided separately from the lower part of the first head moving part 71. It can be guided to move in the X-axis direction along the X-axis guide 76.

隔振器80可以為了防止工作台15振動而設置。將掩模100黏合到框架200上時,即使在發生非常小的振動的環境下,也會對掩模圖案P的對準誤差PPA造成影響。因此,優選地,隔振器80將被動式減振器(passive isolator)設置在工作台15的下部,從而可以防止振動。The vibration isolator 80 may be provided in order to prevent the table 15 from vibrating. When the mask 100 is adhered to the frame 200, the alignment error PPA of the mask pattern P is affected even in an environment where very little vibration occurs. Therefore, it is preferable that the vibration isolator 80 is provided with a passive isolator at the lower portion of the table 15 so that vibration can be prevented.

圖11至12是本發明的一實施例涉及的在模板50上黏合掩模金屬膜110,並形成掩模100,從而製造掩模支撐用的模板的過程的概略圖。11 to 12 are schematic diagrams of a process of manufacturing a mask supporting template by bonding a mask metal film 110 to a template 50 and forming a mask 100 according to an embodiment of the present invention.

參照圖11的(a),可以提供模板(template)50。模板50可以是在掩模100附著並支撐於一表面的狀態下進行移動的媒介。優選地,模板50的一表面平坦,以便能夠支撐並移動平坦的掩模100。中心部50a可以與掩模金屬膜110的掩模單元C對應,而邊緣部50b與掩模金屬膜110的虛擬部對應。模板50可以是面積大於掩模金屬膜110的大平板形狀,以便能夠支撐掩模金屬膜110整體。Referring to (a) of FIG. 11, a template 50 may be provided. The template 50 may be a medium that moves while the mask 100 is attached and supported on a surface. Preferably, one surface of the template 50 is flat so that the flat mask 100 can be supported and moved. The center portion 50 a may correspond to the mask unit C of the mask metal film 110, and the edge portion 50 b may correspond to a dummy portion of the mask metal film 110. The template 50 may have a large flat plate shape having an area larger than that of the mask metal film 110 so as to be able to support the entirety of the mask metal film 110.

優選地,模板50是透明材料,以便在將掩模100對準框架200並進行黏合的過程中,容易地觀察視野(vision)等。另外,透明材料還可以透射激光。作為透明材料,可以使用玻璃(glass)、二氧化矽(silica)、耐熱玻璃、石英(quartz)、三氧化鋁(Al2 O3 )、硼矽酸鹽玻璃(borosilicate glass)、氧化鋯(zirconia)等材料。作為一例,模板50可以使用硼矽酸鹽玻璃中具有優秀的耐熱性、化學耐久性、機械強度、透明性等的BOROFLOAT® 33材料。另外,BOROFLOAT® 33的熱膨脹係數為約3.3,與因瓦合金掩模金屬膜110的熱膨脹係數差異小,因此容易控制掩模金屬膜110。Preferably, the template 50 is a transparent material in order to easily observe a vision or the like during the process of aligning the mask 100 with the frame 200 and adhering it. In addition, transparent materials can also transmit laser light. As the transparent material, glass, silica, heat-resistant glass, quartz, Al 2 O 3 , borosilicate glass, and zirconia can be used. ) And other materials. As an example, BOROFLOAT ® 33 material having excellent heat resistance, chemical durability, mechanical strength, transparency, etc. can be used for the template 50 in borosilicate glass. In addition, the thermal expansion coefficient of BOROFLOAT ® 33 is approximately 3.3, and the thermal expansion coefficient of the Invar alloy mask metal film 110 is small, so it is easy to control the mask metal film 110.

另一方面,模板50的與掩模金屬膜110接觸的一表面可以是鏡面,以便在與掩模金屬膜110(或者掩模100)的界面之間不發生空隙(air gap)。鑒於此,模板50的一表面的表面粗超度Ra可以是100nm以下。為了實現表面粗超度Ra為100nm以下的模板50,模板50可以使用晶片(wafer)。晶片的表面粗超度Ra為約10nm,市場上產品眾多,並且表面處理工序被廣為知曉,因此可以用作模板50。模板50的表面粗超度Ra為nm級,因此沒有空隙,或者幾乎沒有,通過激光焊接容易生成焊縫WB,因此可以不對掩模圖案P的對準誤差造成影響。On the other hand, a surface of the template 50 that is in contact with the mask metal film 110 may be a mirror surface so that an air gap does not occur between an interface with the mask metal film 110 (or the mask 100). In view of this, the surface roughness Ra of one surface of the template 50 may be 100 nm or less. In order to realize the template 50 having a surface roughness Ra of 100 nm or less, a wafer may be used as the template 50. The surface roughness Ra of the wafer is about 10 nm, there are many products on the market, and the surface treatment process is widely known, so it can be used as a template 50. The surface roughness Ra of the template 50 is in the order of nm, so there are no voids or almost no gaps, and the weld seam WB is easily generated by laser welding, so that it does not affect the alignment error of the mask pattern P.

模板50可以形成有激光通過孔51,以便從模板50上部照射的激光L到達掩模100的焊接部(待焊接區域)。激光通過孔51能夠以與焊接部的位置以及數量對應的方式形成於模板50。多個焊接部在掩模100的邊緣或者虛擬部DM以規定間距配置,因此多個激光通過孔51也可以以與之對應的方式以規定間距形成。作為一例,在掩模100的兩側(左側/右側)虛擬部DM,以規定間距配置多個焊接部100,因此在模板50的兩側(左側/右側)也可以以規定間距形成多個激光通過孔51。The template 50 may be formed with a laser passing hole 51 so that the laser light L irradiated from the upper portion of the template 50 reaches the welding portion (area to be welded) of the mask 100. The laser passing holes 51 can be formed in the template 50 so as to correspond to the position and number of the welded portions. Since the plurality of soldering portions are arranged at a predetermined pitch on the edge of the mask 100 or the dummy portion DM, the plurality of laser light passing holes 51 may be formed at a predetermined pitch in a corresponding manner. As an example, since the plurality of soldering portions 100 are arranged at a predetermined pitch on both sides (left / right) of the dummy portion DM on the mask 100, a plurality of lasers may be formed on both sides (left / right) of the template 50 at a predetermined pitch. Through the hole 51.

激光通過孔51並非必須與焊接部的位置以及數量對應。例如,也可以只對一部分激光通過孔51照射激光L,以進行焊接。另外,將掩模100與模板50對準時,也可以使用與焊接部不對應的激光通過孔51中的一部分,以替代對準標記。如果模板50的材料對激光L透明,則也可以不形成激光通過孔51。The laser light passing holes 51 do not necessarily correspond to the positions and numbers of the welded portions. For example, only a part of the laser light passing hole 51 may be irradiated with the laser light L to perform welding. In addition, when the mask 100 is aligned with the template 50, a part of the laser light passing hole 51 that does not correspond to the welded portion may be used instead of the alignment mark. If the material of the template 50 is transparent to the laser light L, the laser light passing hole 51 may not be formed.

可以在模板50的一表面形成臨時黏合部55。直到掩模100黏合於框架200以前,臨時黏合部55能夠使掩模100(或者掩模金屬膜110)臨時黏合於模板50的一表面,以便支撐在模板50上。A temporary adhesive portion 55 may be formed on one surface of the template 50. Until the mask 100 is adhered to the frame 200, the temporary adhesive portion 55 can temporarily adhere the mask 100 (or the mask metal film 110) to one surface of the template 50 so as to be supported on the template 50.

臨時黏合部55可以使用可通過加熱而分離的黏合劑或者黏合片材、可通過UV(紫外線)照射而分離的黏合劑或者黏合片材。The temporary adhesive portion 55 may be an adhesive or an adhesive sheet that can be separated by heating, an adhesive or an adhesive sheet that can be separated by UV (ultraviolet) irradiation.

作為一例,臨時黏合部55可以使用液體蠟(liquid wax)。液體蠟可以使用與在晶片的拋光步驟等中所使用的蠟相同的,對其類型不做特別限定。液體蠟可以包含丙烯酸樹脂、乙酸乙烯酯、尼龍以及多種聚合物等物質以及溶劑,作為主要用於控制與保持力相關的黏合力、耐衝擊性等的樹脂成分。作為一例,臨時黏合部55可以使用丁腈橡膠(ABR,Acrylonitrile butadiene rubber)作為樹脂成分,並且使用包含正丙醇的SKYLIQUID ABR-4016作為溶劑成分。液體蠟可通過旋塗法形成在臨時黏合部55上。As an example, a liquid wax may be used as the temporary adhesive portion 55. The liquid wax can be the same as the wax used in the polishing step of the wafer or the like, and its type is not particularly limited. The liquid wax may contain substances such as acrylic resin, vinyl acetate, nylon, and various polymers, as well as solvents, as a resin component mainly used to control the adhesive force, impact resistance, and the like related to the holding force. As an example, the temporary adhesive portion 55 may use a nitrile rubber (ABR, Acrylonitrile butadiene rubber) as a resin component, and use SKYLIQUID ABR-4016 containing n-propanol as a solvent component. The liquid wax may be formed on the temporary adhesive portion 55 by a spin coating method.

作為液體蠟的臨時黏合部55在高於85℃~100℃的溫度下黏度降低,在低於85℃的溫度下黏度升高,並且可以如固體似的局部凝固,從而能夠將掩模金屬膜110'和模板50固定並黏合在一起。As a liquid wax temporary bonding portion 55, the viscosity decreases at a temperature higher than 85 ° C to 100 ° C, and the viscosity increases at a temperature lower than 85 ° C, and can be partially solidified like a solid, so that the mask metal film can be 110 'and the template 50 are fixed and glued together.

在準備模板50之前或之後,可以準備掩模金屬膜110。The mask metal film 110 may be prepared before or after the template 50 is prepared.

作為一實施例,可以以軋製方式準備掩模金屬膜110。通過軋製工序製造的金屬片材在製造工藝上可以具有數十至數百μm的厚度。為了UHD水平的高分辨率,應該使用厚度為20μm以下的較薄的掩模金屬膜110,才能進行精細圖案化,為了UHD以上的超高分辨率,應該使用厚度為10μm的較薄的掩模金屬膜110。但是,通過軋製(rolling)工序製成的掩模金屬膜110'的厚度為約25~500μm,因此需要使其厚度變得更薄。As an example, the mask metal film 110 may be prepared in a rolling manner. The metal sheet manufactured by the rolling process may have a thickness of several tens to several hundreds of μm in the manufacturing process. For UHD level high resolution, a thin mask metal film 110 with a thickness of less than 20 μm should be used for fine patterning. For ultra high resolution above UHD, a thinner mask with a thickness of 10 μm should be used Metal film 110. However, since the thickness of the mask metal film 110 ′ manufactured by the rolling process is about 25 to 500 μm, it is necessary to make it thinner.

因此,可以進一步進行使掩模金屬膜110'的一表面平坦化PS(參照圖11的(b))的工序。其中,平坦化PS是指將掩模金屬膜110'的一表面(上表面)進行鏡面化的同時,去除掩模金屬膜110'的上部的一部分,從而縮小厚度。平坦化PS可以通過CMP(Chemical Mechanical Polishing,化學機械拋光)方法進行,並可以不受限制地使用公知的CMP方法。另外,可以通過化學濕式蝕刻(chemical wet etching)或者乾式蝕刻(dry etching)方法,縮小掩模金屬膜110'的厚度。此外,還可以不受限制地使用能夠使掩模金屬膜110'的厚度變薄的平坦化工序。Therefore, a step of planarizing PS (see FIG. 11 (b)) on one surface of the mask metal film 110 ′ can be further performed. Here, the flattening PS means that while one surface (upper surface) of the mask metal film 110 ′ is mirror-finished, a part of the upper portion of the mask metal film 110 ′ is removed, thereby reducing the thickness. The planarization PS can be performed by a CMP (Chemical Mechanical Polishing) method, and a known CMP method can be used without limitation. In addition, the thickness of the mask metal film 110 ′ can be reduced by a chemical wet etching method or a dry etching method. In addition, a planarization step capable of reducing the thickness of the mask metal film 110 'can be used without limitation.

在實施平坦化PS過程中,在作為一例的CMP過程中,能夠控制掩模金屬膜110'上部表面的表面粗糙度Ra 。優選地,可以進行進一步降低表面粗超度的鏡面化。或者,作為另一例,可在進行化學濕式蝕刻或乾式蝕刻過程以實施平坦化PS後,增加其他的CMP工序等拋光工序,以降低表面粗糙度RaDuring the implementation of the planarization PS, the surface roughness R a of the upper surface of the mask metal film 110 ′ can be controlled in the CMP process as an example. Preferably, specularization can be performed to further reduce the surface roughness. After Or, as another example, may be performed wet chemical etching or dry etching in the planarization process PS, a CMP process is to add other polishing step, to reduce the surface roughness R a.

如此,可以將掩模金屬膜110'的厚度縮小至約50μm以下。因此,優選地,將掩模金屬膜110的厚度形成為約2μm至50μm,更加優選地,可以將厚度形成為約5μm至20μm。但是,並非必須限定於此。In this way, the thickness of the mask metal film 110 ′ can be reduced to about 50 μm or less. Therefore, preferably, the thickness of the mask metal film 110 is formed to be about 2 μm to 50 μm, and more preferably, the thickness may be formed to be about 5 μm to 20 μm. However, it is not necessarily limited to this.

作為另一實施例,可以通過電鑄方式準備掩模金屬膜110。As another embodiment, the mask metal film 110 may be prepared by an electroforming method.

母板的基材可以是導電性材料,以便能夠實施電鑄。母板可以在電鑄中用作陰極體。The base material of the motherboard may be a conductive material so that electroforming can be performed. The motherboard can be used as a cathode body in electroforming.

作為導電性材料,金屬可以在表面上生成金屬氧化物,可以在金屬製造過程中流入有雜質,多晶矽基材可以存在夾雜物或者晶界(Grain Boundary),導電性高分子基材含有雜質的可能性高,並且強度、耐酸性等可能脆弱。將諸如金屬氧化物、雜質、夾雜物、晶界等的妨礙在母板(或者陰極體)表面均勻形成電場的因素稱為“缺陷”(Defect)。由於缺陷(Defect),無法對所述材料的陰極施加均勻的電場,有可能導致不均勻地形成一部分鍍膜110(或者掩模金屬膜110)。As a conductive material, metal can generate metal oxides on the surface, impurities can flow during the metal manufacturing process, polycrystalline silicon substrates can have inclusions or grain boundaries, and conductive polymer substrates may contain impurities. It is high-strength, and may be weak in strength and acid resistance. Factors such as metal oxides, impurities, inclusions, grain boundaries, etc., which hinder the uniform formation of an electric field on the surface of a motherboard (or cathode body) are called "Defects". Due to a defect, a uniform electric field cannot be applied to the cathode of the material, which may cause a part of the plating film 110 (or the mask metal film 110) to be unevenly formed.

在實現UHD級別以上的超高清像素中,鍍膜以及鍍膜圖案(掩模圖案P)的不均勻,有可能對形成像素產生不好的影響。例如,當前QHD畫質為500-600PPI(pixel per inch,每英寸像素),像素大小為約30-50μm,在4K UHD、8K UHD高畫質具有比之更高的~860PPI,~1600PPI等的分辨率。直接應用於VR設備的微型顯示器、或者插入VR設備後使用的微型顯示器以約2000PPI以上級別的高分辨率為目標,像素大小為約5~10μm。應用於此的FMM、陰影掩模的圖案寬度可以形成為數μm至數十μm大小,優選小於30μm的大小,因此數μm大小的缺陷也是在掩模的圖案尺寸中佔據很大比重程度的尺寸。另外,為了去除所述材料的陰極的缺陷,可以進行用於去除金屬氧化物、雜質等的附加工序,該過程中有可能又引發陰極材料被蝕刻等的其他缺陷。In the realization of ultra-high-definition pixels above UHD level, the unevenness of the coating film and the coating pattern (mask pattern P) may have a bad influence on the formation of pixels. For example, the current QHD picture quality is 500-600PPI (pixel per inch) and the pixel size is about 30-50μm. It has higher quality of 4K UHD and 8K UHD than ~ 860PPI, ~ 1600PPI Resolution. Mini-displays directly applied to VR devices, or micro-displays used after being inserted into VR devices, aim at high resolutions above 2000PPI, and the pixel size is about 5-10 μm. The pattern width of the FMM and the shadow mask applied thereto can be formed to a size of several μm to several tens of μm, preferably less than 30 μm. Therefore, a defect of a few μm size also occupies a large proportion in the pattern size of the mask. In addition, in order to remove defects of the cathode of the material, an additional process for removing metal oxides, impurities, and the like may be performed, and other defects such as etching of the cathode material may be caused in the process.

因此,本發明可以使用單晶矽材料的母板(或者陰極體)。特別是,優選單晶矽材料。可以對單晶矽材料的母板進行1019 /cm3 以上的高濃度摻雜,以便具有導電性。摻雜可以對整個母板進行,也可以僅對母板的局部表面進行。Therefore, the present invention can use a mother board (or cathode body) of a single crystal silicon material. In particular, a single crystal silicon material is preferred. The mother board of the single crystal silicon material can be doped at a high concentration of 10 19 / cm 3 or more so as to have conductivity. Doping can be performed on the entire mother board or only on a partial surface of the mother board.

另一方面,單晶材料可以使用Ti、Cu、Ag等金屬、GaN、SiC、GaAs、GaP、AlN、InN、InP、Ge等半導體、石墨(graphite)、石墨烯(graphene)等碳類材料、包含CH3 NH3 PbCl3 、CH3 NH3 PbBr3 、CH3 NH3 PbI3 、SrTiO3 等的鈣鈦礦(perovskite)結構等的超導用單晶陶瓷、飛機零部件用單晶超耐熱合金等。金屬、碳類材料通常是導電性材料。半導體材料可以進行1019 /cm3 以上的高濃度摻雜,以便具有導電性。其他材料可以進行摻雜或者形成氧空位(oxygen vacancy)等,以形成導電性。摻雜可以在母板整體進行,也可以只在母板的局部表面進行。On the other hand, for single crystal materials, metals such as Ti, Cu, and Ag, semiconductors such as GaN, SiC, GaAs, GaP, AlN, InN, InP, Ge, carbon materials such as graphite and graphene, comprising a CH 3 NH 3 PbCl 3, CH 3 NH 3 PbBr 3, CH 3 NH 3 PbI 3, SrTiO 3 perovskite-like (Transition of perovskite) crystal structure with a superconducting ceramics, single crystal superalloy aircraft parts Alloys, etc. Metal and carbon materials are usually conductive materials. The semiconductor material can be doped at a high concentration of 10 19 / cm 3 or more so as to have conductivity. Other materials may be doped or formed with oxygen vacancy to form conductivity. Doping may be performed on the entire motherboard or only on a part of the surface of the motherboard.

單晶材料由於沒有缺陷,電鑄時,由於在整體表面形成均勻的電場而生成均勻的鍍膜110。通過均勻的鍍膜製造的框架一體型掩模100、200可以進一步改善OLED像素的畫質水平。並且,由於無需進行去除、消除缺陷的附加工序,能夠降低工藝費用,並提升生產性。Since the single crystal material has no defects, a uniform plating film 110 is generated due to the formation of a uniform electric field on the entire surface during electroforming. The frame-integrated masks 100 and 200 manufactured by uniform coating can further improve the picture quality level of the OLED pixels. In addition, since no additional steps for removing and eliminating defects are required, it is possible to reduce process costs and improve productivity.

將導電性基材用作母板(陰極體(Cathode Body)),隔開配置陽極體(未圖示),並且可以在導電性基材上通過電鑄形成鍍膜110(或者掩模金屬膜110)。A conductive substrate is used as a mother substrate (cathode body), an anode body (not shown) is disposed at a distance, and a plating film 110 (or a mask metal film 110) can be formed on the conductive substrate by electroforming. ).

然後,可以從導電性基材分離鍍膜110。Then, the plating film 110 can be separated from the conductive substrate.

另一方面,將鍍膜110從導電性基材分離以前,可以進行熱處理。為了降低掩模100的熱膨脹係數,同時防止掩模100以及掩模圖案P的熱變形,在從導電性基材分離鍍膜110(或者,母板、陰極體)以前,進行熱處理。熱處理可以以300℃至800℃的溫度進行。On the other hand, before the plating film 110 is separated from the conductive substrate, heat treatment may be performed. In order to reduce the thermal expansion coefficient of the mask 100 and prevent thermal deformation of the mask 100 and the mask pattern P, heat treatment is performed before the plating film 110 (or the mother board, the cathode body) is separated from the conductive substrate. The heat treatment may be performed at a temperature of 300 ° C to 800 ° C.

一般,與通過軋製製成的因瓦合金薄板相比,通過電鑄製成的因瓦合金薄板的熱膨脹係數高。因此,對因瓦合金薄板進行熱處理,從而可以降低熱膨脹係數,但是該熱處理過程中有可能因瓦合金薄板發生剝離、變形等。這是由於在黏合於導電性基材狀態下,除了導電性基材的上部表面以外,還將鍍膜110形成至側面以及到下部表面的一部分,則即使進行熱處理,也不發生剝離、變形等,能夠穩定地進行熱處理。Generally, the thermal expansion coefficient of an Invar sheet produced by electroforming is higher than that of an Invar sheet produced by rolling. Therefore, heat treatment of the Invar alloy sheet can reduce the thermal expansion coefficient. However, during the heat treatment, the Invar alloy sheet may be peeled and deformed. This is because in the state of being adhered to the conductive substrate, in addition to the upper surface of the conductive substrate, the plating film 110 is formed to the side surface and a portion to the lower surface, and even if heat treatment is performed, peeling, deformation, etc. do not occur. Heat treatment can be performed stably.

與軋製工序相比,通過電鑄工序生成的掩模金屬膜110的厚度可以更薄。因此,還可以省略縮小厚度的平坦化PS工序,但是根據電鍍掩模金屬膜110'的表面層的組成、結晶結構/微觀結構而蝕刻特性有可能不同,因此需要通過平坦化PS來控制表面特性、厚度。The thickness of the mask metal film 110 generated by the electroforming process can be thinner than that of the rolling process. Therefore, it is possible to omit the planarization PS step of reducing the thickness, but the etching characteristics may be different depending on the composition of the surface layer and the crystal structure / microstructure of the plating mask metal film 110 ′. Therefore, it is necessary to control the surface characteristics by planarizing the PS. ,thickness.

然後,參照圖11的(b),可以在模板50上黏合金屬膜110'。將液體蠟加熱至85℃以上,使掩模金屬膜110'接觸於模板50後,使掩模金屬膜110'以及模板50通過輥之間,從而可以進行黏合。Then, referring to FIG. 11 (b), the metal film 110 ′ may be adhered to the template 50. After the liquid wax is heated to 85 ° C. or higher, the mask metal film 110 ′ is brought into contact with the template 50, and then the mask metal film 110 ′ and the template 50 are allowed to pass between the rollers so as to be bonded.

根據一實施例,在模板50進行約120℃、60秒的烘乾(baking),以使臨時黏合部55的溶劑進行汽化,並可以直接進行掩模金屬膜層疊(lamination)工序。層疊可以是在一表面形成有臨時黏合部55的模板50上裝載掩模金屬膜110',使其通過約100℃的上部輥(roll)與約0℃的下部輥之間來進行。其結果,掩模金屬膜110'可以通過臨時黏合部55接觸在模板50上。According to an embodiment, baking is performed at about 120 ° C. for 60 seconds at the template 50 to vaporize the solvent of the temporary bonding portion 55, and a mask metal film lamination step can be directly performed. The lamination may be performed by placing a mask metal film 110 ′ on a template 50 having a temporary adhesive portion 55 formed on a surface thereof, and passing the mask metal film 110 ′ between an upper roll at approximately 100 ° C. and a lower roll at approximately 0 ° C. As a result, the mask metal film 110 ′ can be in contact with the template 50 through the temporary adhesive portion 55.

圖13是本發明的一實施例涉及的臨時黏合部55的放大剖視概略圖。作為又一例,臨時黏合部55可以使用熱剝離膠帶(thermal release tape)。熱剝離膠帶可以是在中間配置有PET薄膜等芯膜56,在芯膜56的兩表面配置可熱剝離的黏合層(熱剝離黏合劑,thermal release adhesive)57a、57b,在黏合層57a、57b的外部配置剝離膜/離型膜58a、58b的形狀。其中,配置在芯膜56兩表面的黏合層57a、57b可以具有彼此不同的剝離溫度。FIG. 13 is an enlarged cross-sectional schematic view of a temporary adhesive portion 55 according to an embodiment of the present invention. As another example, a thermal release tape may be used as the temporary adhesive portion 55. The thermal release tape may include a core film 56 such as a PET film in the middle, thermally peelable adhesive layers (thermal release adhesives) 57a, 57b disposed on both surfaces of the core film 56, and adhesive layers 57a, 57b. The shape of the release film / release film 58a, 58b is arrange | positioned outside. The adhesive layers 57 a and 57 b disposed on both surfaces of the core film 56 may have different peeling temperatures from each other.

根據一實施例,在去除剝離膜/離型膜58a、58b的狀態下,熱剝離膠帶的下部表面(第二黏合層57b)可以黏合於模板50,而熱剝離膠帶的上部表面(第一黏合層57a)黏合於掩模金屬膜110'。第一黏合層57a和第二黏合層57b具有彼此不同的剝離溫度,因此當在後述的圖18中從掩模100分離模板50時,通過施加使第一黏合層57a熱剝離的熱,掩模100可以從模板50以及臨時黏合部55分離。According to an embodiment, in a state where the release film / release film 58a, 58b is removed, the lower surface of the thermal release tape (second adhesive layer 57b) may be adhered to the template 50, and the upper surface of the thermal release tape (first adhesive layer) The layer 57a) is adhered to the mask metal film 110 '. The first adhesive layer 57a and the second adhesive layer 57b have different peeling temperatures from each other. Therefore, when the template 50 is separated from the mask 100 in FIG. 18 to be described later, heat is applied to thermally peel off the first adhesive layer 57a. 100 may be separated from the template 50 and the temporary bonding portion 55.

接著,進一步參照圖11的(b),可以使掩模金屬膜110'的一表面進行平坦化PS。如上所述,通過軋製工序製成的掩模金屬膜110'可以通過平坦化PS工序縮小(110'->110)厚度。並且,通過電鑄工序製成的掩模金屬膜110也可以為了控制表面特性、厚度而進行平坦化PS工序。Next, referring to (b) of FIG. 11, one surface of the mask metal film 110 ′ may be planarized with PS. As described above, the thickness of the mask metal film 110 'made by the rolling process can be reduced (110'-> 110) by the planarization PS process. In addition, the mask metal film 110 produced by the electroforming process may be subjected to a planarization PS process in order to control the surface characteristics and thickness.

由此,如圖11的(c)所示,隨著掩模金屬膜110'的厚度縮小(110'->110),掩模金屬膜110的厚度可以形成為約5μm至20μm。Thus, as shown in (c) of FIG. 11, as the thickness of the mask metal film 110 ′ is reduced (110 ′-> 110), the thickness of the mask metal film 110 may be formed to about 5 μm to 20 μm.

然後,參照圖12的(d),可以在掩模金屬膜110上形成被圖案化的絕緣部25。絕緣部25可以由光刻膠材料利用印刷法等形成。Then, referring to (d) of FIG. 12, a patterned insulating portion 25 may be formed on the mask metal film 110. The insulating portion 25 may be formed of a photoresist material by a printing method or the like.

接著,可以進行掩模金屬膜110的蝕刻。可以不受限制地使用乾式蝕刻、濕式蝕刻等方法,蝕刻結果,從絕緣部25之間的中空空間26暴露的掩模金屬膜110的部分可以被蝕刻。掩模金屬膜110的被蝕刻部分可以構成掩模圖案P,並製造形成有多個掩模圖案P的掩模100。Next, the mask metal film 110 can be etched. A method such as dry etching, wet etching, or the like may be used without limitation. As a result of the etching, a portion of the mask metal film 110 exposed from the hollow space 26 between the insulating portions 25 may be etched. The etched portion of the mask metal film 110 may constitute a mask pattern P, and a mask 100 in which a plurality of mask patterns P are formed is manufactured.

然後,參照圖12的(e),可以去除絕緣部25,從而完成用於支撐掩模100的模板50的製造。Then, referring to (e) of FIG. 12, the insulating portion 25 may be removed, thereby completing the manufacture of the template 50 for supporting the mask 100.

掩模100可以包括形成有多個掩模圖案P的掩模單元C以及掩模單元C周邊的虛擬部DM。虛擬部DM與除了單元C以外的掩模膜110(掩模金屬膜110)部分對應,可以僅包括掩模膜110,或者包括形成有形狀與掩模圖案P相似的規定的虛擬部圖案的掩模膜110。虛擬部DM對應於掩模100的邊緣,虛擬部DM的一部分或者全部可以黏合於框架200(掩模單元片材部220)。The mask 100 may include a mask unit C on which a plurality of mask patterns P are formed, and a dummy portion DM around the mask unit C. The dummy portion DM corresponds to a portion of the mask film 110 (mask metal film 110) other than the cell C, and may include only the mask film 110 or a mask formed with a predetermined dummy portion pattern similar in shape to the mask pattern P.模 膜 110。 The film 110. The dummy portion DM corresponds to an edge of the mask 100, and a part or all of the dummy portion DM may be adhered to the frame 200 (mask unit sheet portion 220).

掩模圖案P的寬度可以為小於40μm,掩模100的厚度可以為約5~20μm。框架200具有多個掩模單元區域CR,因此可以具備多個掩模100且所述多個掩模具有的掩模單元C對應於各個掩模單元區域CR。另外,可以具備用於支撐各個掩模100的多個模板50。The width of the mask pattern P may be less than 40 μm, and the thickness of the mask 100 may be about 5 to 20 μm. Since the frame 200 has a plurality of mask unit regions CR, it may include a plurality of masks 100 and the mask units C included in the plurality of masks correspond to the respective mask unit regions CR. In addition, a plurality of templates 50 for supporting each mask 100 may be provided.

圖14是將本發明的一實施例涉及的掩模支撐用的模板50裝載於框架200上的過程的概略圖。FIG. 14 is a schematic diagram of a process in which a mask supporting template 50 according to an embodiment of the present invention is mounted on a frame 200.

參照圖14,模板50可以被夾持部30移送。夾持部30的吸附單元32可吸附黏合有掩模100的模板50表面的相反表面並進行移送。夾持部30吸附並移送模板50,掩模100通過臨時黏合部55黏合並支撐於模板50,因此,即使在框架200上移送模板50的過程中,也不會影響掩模100的黏合狀態以及對準狀態。Referring to FIG. 14, the template 50 may be transferred by the clamping portion 30. The suction unit 32 of the gripping portion 30 can suck the opposite surface of the surface of the template 50 to which the mask 100 is adhered and transfer it. The clamping portion 30 sucks and transfers the template 50, and the mask 100 is adhered and supported by the template 50 through the temporary bonding portion 55. Therefore, even when the template 50 is transferred on the frame 200, the adhesion state of the mask 100 and Alignment.

圖15是將本發明的一實施例涉及的模板50裝載在框架200上,以使掩模100與框架200的單元區域CR(CR11~CR52)對應的狀態的概略圖。以下,對框架200具有2×5的掩模單元區域CR(CR11~CR52)進行舉例說明。FIG. 15 is a schematic diagram of a state in which a template 50 according to an embodiment of the present invention is mounted on a frame 200 so that the mask 100 corresponds to a cell region CR (CR11 to CR52) of the frame 200. Hereinafter, the frame 200 has 2 × 5 mask unit regions CR (CR11 to CR52).

接著,參照圖15,可以使掩模100與框架200的一個掩模單元區域CR對應。通過將模板50裝載於框架200(或者,掩模單元片材部220)上,可以使掩模100與掩模單元區域CR對應。在控制夾持部30的位置的同時,可通過頭部60的相機單元65來觀察掩模100是否與掩模單元區域對應。由於模板50擠壓掩模100,因此,掩模100和框架200可以緊貼。Next, referring to FIG. 15, the mask 100 may correspond to one mask unit region CR of the frame 200. By mounting the template 50 on the frame 200 (or the mask unit sheet portion 220), the mask 100 can be made to correspond to the mask unit region CR. While controlling the position of the gripping portion 30, whether or not the mask 100 corresponds to a mask unit area can be observed by the camera unit 65 of the head 60. Since the template 50 presses the mask 100, the mask 100 and the frame 200 can be in close contact.

另一方面,還可以在框架200下部進一步配置下部支撐單元90(參照圖17)。下部支撐單元90可以是與框架支撐單元26形成一體的結構。下部支撐單元90可具有能夠進入到框架邊緣部210的中空區域內的程度的大小,並且可以是平板形狀。另外,下部支撐單元90的上部表面還可以形成有與掩模單元片材部220的形狀對應的規定的支撐槽(未圖示)。此時,邊緣片材部221以及第一柵格片材部223、第二柵格片材部225可插入到支撐槽內,可以更好地固定掩模單元片材部220。On the other hand, a lower support unit 90 (see FIG. 17) may be further disposed below the frame 200. The lower support unit 90 may be a structure integrally formed with the frame support unit 26. The lower support unit 90 may have a size capable of entering into the hollow region of the frame edge portion 210 and may be a flat plate shape. In addition, a predetermined support groove (not shown) corresponding to the shape of the mask unit sheet portion 220 may be formed on the upper surface of the lower support unit 90. At this time, the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225 can be inserted into the support groove, and the mask unit sheet portion 220 can be better fixed.

下部支撐單元90可以擠壓由掩模100接觸的掩模單元區域CR的相反表面。即,下部支撐單元90向上部方向支撐掩模單元片材部220,從而可以防止掩模單元片材部220在掩模100的黏合過程中向下部方向下垂。與此同時,下部支撐單元90和模板50朝向相反方向擠壓掩模100的邊緣以及框架200(或者,掩模單元片材部220),因此,可以保持掩模100的對準狀態,避免其散亂。The lower support unit 90 may press the opposite surface of the mask unit region CR contacted by the mask 100. That is, the lower support unit 90 supports the mask unit sheet portion 220 in the upper direction, so that the mask unit sheet portion 220 can be prevented from sagging in the lower direction during the bonding process of the mask 100. At the same time, the lower support unit 90 and the template 50 press the edges of the mask 100 and the frame 200 (or the mask unit sheet portion 220) in opposite directions, so that the alignment state of the mask 100 can be maintained and avoided. Scattered.

如此,僅憑在模板50上附著掩模100後,將模板50裝載於框架200上,就可以完成使掩模100與框架的掩模單元區域CR對應的過程,因此,可以在該過程中不對掩模100施加任何拉伸力。In this way, only by attaching the mask 100 to the template 50 and loading the template 50 on the frame 200, the process of making the mask 100 correspond to the mask unit region CR of the frame can be completed. The mask 100 applies any tensile force.

圖16是將本發明的一實施例涉及的掩模黏合到框架上的過程的概略圖。16 is a schematic diagram of a process of bonding a mask according to an embodiment of the present invention to a frame.

然後,對掩模100照射激光L,可通過激光焊接將掩模100黏合到框架200上。在被激光焊接的掩模的焊接部部分,生成焊縫WB,焊縫WB與可以掩模100/框架200具有相同材質並且與之連接成一體。彼此隔開的一對激光單元61a、61b可同時在掩模100的左側焊接部和右側焊接部照射激光L,以進行焊接。Then, the mask 100 is irradiated with laser light L, and the mask 100 can be adhered to the frame 200 by laser welding. A welding seam WB is generated at the welding portion of the mask to be laser-welded, and the welding seam WB and the mask 100 / frame 200 can be made of the same material and connected to the same. A pair of laser units 61 a and 61 b spaced apart from each other can simultaneously irradiate the laser light L to the left welding portion and the right welding portion of the mask 100 to perform welding.

圖17是通過本發明的一實施例涉及的吸附孔229,對掩模100施加吸附力的狀態的概略圖。FIG. 17 is a schematic diagram of a state where an adsorption force is applied to the mask 100 through the adsorption hole 229 according to an embodiment of the present invention.

另一方面,根據另一實施例,多個吸附孔229可形成在具有掩模單元區域CR的框架200的角部附近。具體地,多個吸附孔229可以形成在掩模單元片材部220的與其角部隔開規定距離的部分,更加具體地,可以形成在與邊緣片材部221的內側角部隔開規定距離的部分、以及與第一柵格片材部223、第二柵格片材部225的角部隔開規定距離的部分。On the other hand, according to another embodiment, a plurality of suction holes 229 may be formed near a corner of the frame 200 having the mask unit region CR. Specifically, the plurality of suction holes 229 may be formed in a portion of the mask unit sheet portion 220 spaced apart from its corner by a predetermined distance, and more specifically, may be formed in a predetermined distance away from the inner corner portion of the edge sheet portion 221. And a portion separated from a corner of the first grid sheet portion 223 and the second grid sheet portion 225 by a predetermined distance.

多個吸附孔229的形態、大小等在可以在施加真空吸壓的目的範圍內不受限制。但是,優選地,多個吸附孔229的位置不與掩模100的焊接部(焊接目標區域)重疊的位置。當焊接部與吸附孔229重疊時,由於掩模100與框架200(或者掩模單元片材部220)無法緊密接觸而有可能導致無法順利地形成基於激光焊接的焊縫WB。優選地,多個吸附孔229可以形成在與焊接部相鄰的部分,以使掩模100的焊接部部分更加緊貼於框架200(或者,掩模單元片材部220)。The shape, size, and the like of the plurality of adsorption holes 229 are not limited within the range in which the vacuum suction pressure can be applied. However, it is preferable that the positions of the plurality of suction holes 229 do not overlap with the welding portions (welding target regions) of the mask 100. When the welding portion overlaps with the suction hole 229, the mask 100 and the frame 200 (or the mask unit sheet portion 220) cannot be in close contact with each other, which may result in a failure to form a laser weld WB smoothly. Preferably, a plurality of suction holes 229 may be formed in a portion adjacent to the welding portion so that the welding portion portion of the mask 100 is more closely attached to the frame 200 (or the mask unit sheet portion 220).

如圖17所示,將模板50裝載於框架200(或者掩模單元片材部220)上時,掩模100的下部表面一部分與框架200(或者,掩模單元片材部220)上部接觸。形成於框架200(或者,掩模單元片材部220)的吸附孔229的上部與掩模100的下部表面對應,與吸附孔229下部對應的吸附力(吸壓)施加設備,可通過吸附孔229對掩模100施加吸附力VS(或者吸壓VS),從而可以吸附與吸附孔229對應的掩模100部分。因此,掩模100更加緊貼於框架200,當進行激光焊接時,可以更加穩定地生成焊縫WB。As shown in FIG. 17, when the template 50 is mounted on the frame 200 (or the mask unit sheet portion 220), a part of the lower surface of the mask 100 is in contact with the upper portion of the frame 200 (or the mask unit sheet portion 220). The upper portion of the suction hole 229 formed in the frame 200 (or the mask unit sheet portion 220) corresponds to the lower surface of the mask 100. The suction force (suction pressure) application device corresponding to the lower portion of the suction hole 229 can pass through the suction hole. 229 applies a suction force VS (or suction pressure VS) to the mask 100 so that a part of the mask 100 corresponding to the suction hole 229 can be suctioned. Therefore, the mask 100 is more closely attached to the frame 200, and when laser welding is performed, the weld seam WB can be generated more stably.

下部支撐單元90的上部可以形成有吸附部95。優選地,將吸附部95配置成與形成於框架200(或者,掩模單元片材部200)的吸附孔229的位置對應。換句話說,吸附部95能夠配置在下部支撐單元90上的可對吸附孔229集中施加吸附力VS(或者,吸壓VS)的位置。吸附部95可以使用公知的能夠吸入真空的裝置,並且可以與外部的吸壓發生裝置連接。作為一例,真空流路96形成於下部支撐單元90的內部,另一端與泵等的外部吸壓發生裝置(未圖示)連接,一端可以與吸附部95連接。與真空流路96連接的吸附部95的上部表面形成有多個孔、裂縫等,可以用作施加吸壓的通道。外部的吸壓發生裝置可以連接在下部支撐單元90的各個真空流路96,從而對各個真空流路96的吸壓進行個別控制,並且可以對全部的真空流路96的吸壓進行同時控制。An upper portion of the lower support unit 90 may be formed with an adsorption portion 95. Preferably, the suction part 95 is arranged so as to correspond to the position of the suction hole 229 formed in the frame 200 (or the mask unit sheet part 200). In other words, the suction part 95 can be arranged at a position on the lower support unit 90 where the suction force VS (or suction pressure VS) can be concentratedly applied to the suction hole 229. The suction unit 95 may use a known device capable of sucking a vacuum, and may be connected to an external suction pressure generating device. As an example, the vacuum flow path 96 is formed inside the lower support unit 90, the other end is connected to an external suction pressure generating device (not shown) such as a pump, and one end may be connected to the suction portion 95. A plurality of holes, cracks, and the like are formed on the upper surface of the suction part 95 connected to the vacuum flow path 96, and can be used as a passage for applying suction pressure. An external suction pressure generating device can be connected to each vacuum flow path 96 of the lower support unit 90, so that the suction pressure of each vacuum flow path 96 can be controlled individually, and the suction pressures of all the vacuum flow paths 96 can be controlled simultaneously.

從下部支撐單元90的吸附部95提供吸附力VS(或者,吸壓VS),隨著該吸附力VS通過吸附孔229施加到掩模100,掩模100可以向吸附部95側(下部側)被吸附。此時,掩模100與框架200(或者,掩模單元片材部220)的界面能夠緊密接觸。The suction force VS (or suction pressure VS) is provided from the suction portion 95 of the lower support unit 90, and as the suction force VS is applied to the mask 100 through the suction hole 229, the mask 100 can be moved toward the suction portion 95 (lower side). Being absorbed. At this time, the interface between the mask 100 and the frame 200 (or the mask unit sheet portion 220) can be brought into close contact.

由於吸附部95強烈地吸附掩模100,因此在掩模100與框架200的界面之間不存在微小的空隙。結果,掩模100與框架200(圖17的放大圖中,第一柵格片材部223)緊貼,因此不管在焊接部的任何部分照射激光L,也能在掩模100和框架200之間可以很好地生成焊縫WB。焊縫WB將掩模100和框架200連接成一體,最終可以穩定地進行焊接。Since the adsorption part 95 strongly adsorbs the mask 100, there is no minute gap between the interface between the mask 100 and the frame 200. As a result, the mask 100 is in close contact with the frame 200 (in the enlarged view of FIG. 17, the first grid sheet portion 223). Therefore, the laser beam L can be irradiated to any portion of the welding portion. Can well generate welds WB. The welding seam WB connects the mask 100 and the frame 200 into one body, and finally, welding can be performed stably.

圖18是將本發明的一實施例涉及的掩模100黏合到框架200上後,分離掩模100和模板50的過程的概略圖。FIG. 18 is a schematic diagram of a process of separating the mask 100 and the template 50 after the mask 100 according to an embodiment of the present invention is adhered to the frame 200.

參照圖18,將掩模100黏合到框架200上後,可以分離(debonding)掩模100和模板50。掩模100和模板50的分離可通過對臨時黏合部55進行加熱ET、化學處理CM、施加超聲波US、施加UV中的至少一種來實現。由於掩模100保持黏合於框架200的狀態,因此可以只抬起模板50。作為一例,加熱ET至高於85℃~100℃的溫度時,臨時黏合部55的黏度降低,並降低掩模100和模板50的黏合力,從而可以分離掩模100和模板50。作為另一例,在IPA、丙酮、乙醇等化學物質中浸漬CM臨時黏合部55,從而可以以溶解、去除臨時黏合部55的方式分離掩模100和模板50。作為另一例,施加超聲波US或者施加UV時,掩模100和模板50的黏合力變弱,從而可以分離掩模100和模板50。Referring to FIG. 18, after the mask 100 is adhered to the frame 200, the mask 100 and the template 50 can be debonded. The mask 100 and the template 50 can be separated by at least one of heating ET, chemically treating CM, applying ultrasonic waves US, and applying UV to the temporary adhesive portion 55. Since the mask 100 remains adhered to the frame 200, only the template 50 can be lifted. As an example, when the ET is heated to a temperature higher than 85 ° C. to 100 ° C., the viscosity of the temporary adhesive portion 55 decreases, and the adhesive force between the mask 100 and the template 50 is reduced, so that the mask 100 and the template 50 can be separated. As another example, the CM temporary adhesive portion 55 is immersed in a chemical substance such as IPA, acetone, or ethanol, so that the mask 100 and the template 50 can be separated by dissolving and removing the temporary adhesive portion 55. As another example, when ultrasonic wave US or UV is applied, the adhesive force between the mask 100 and the template 50 becomes weak, and the mask 100 and the template 50 can be separated.

更具體而言,用於黏合掩模100和模板50的臨時黏合部55為TBDB黏合材料(temporary bonding & debonding adhesive,臨時黏合和脫黏黏合劑),因此可以使用各種脫黏方法。More specifically, the temporary bonding portion 55 for bonding the mask 100 and the template 50 is a TBDB bonding material (temporary bonding & debonding adhesive), so various debonding methods can be used.

作為一例,可以使用基於化學處理CM的溶劑脫黏(Solvent Debonding)方法。隨著臨時黏合部55因溶劑(solvent)的滲透而溶解,可以實現脫黏。此時,由於掩模100形成有圖案P,溶劑可通過掩模圖案P以及掩模100與模板50的界面進行滲透。溶劑脫黏可以在常溫(room temperature)下脫黏,並且不需要其他設計複雜的脫黏設備,因此與其他脫黏方法相比,相對經濟。As an example, a solvent debonding (Solvent Debonding) method based on chemical treatment of CM can be used. As the temporary adhesive portion 55 is dissolved by the penetration of the solvent, debonding can be achieved. At this time, since the mask 100 is formed with the pattern P, the solvent can penetrate through the mask pattern P and the interface between the mask 100 and the template 50. Solvent debonding can be debonded at room temperature, and does not require other debonding equipment with complicated design, so it is relatively economical compared with other debonding methods.

作為另一例,可使用基於加熱ET的熱脫黏(Heat Debonding)方法。利用高溫的熱,引導臨時黏合部55的分解,當掩模100與模板50間的黏合力減少時,可以沿著上下方向或者左右方向進行分離。As another example, a heat debonding method based on heated ET may be used. Decomposition of the temporary adhesive portion 55 is guided by high-temperature heat, and when the adhesive force between the mask 100 and the template 50 is reduced, it can be separated in the up-down direction or the left-right direction.

作為另一例,可以使用基於加熱ET、施加UV等的可剝離黏合劑脫黏(eelable Adhesive Debonding)方法。當臨時黏合部55為熱剝離膠帶時,可通過剝離黏合劑脫黏方法進行脫黏,該方法不像熱脫黏方法似的需要高溫的熱處理以及昂貴的熱處理裝備,並且進行過程相對簡單。As another example, a peelable adhesive debonding method by heating ET, applying UV, or the like can be used. When the temporary adhesive portion 55 is a thermal release tape, the adhesive can be removed by a release adhesive debonding method, which does not require high-temperature heat treatment and expensive heat treatment equipment like the thermal debonding method, and the process is relatively simple.

作為另一例,可以使用基於化學處理CM、施加超聲波US、施加UV等的常溫脫黏(Room Temperature Debonding)方法。當對掩模100或者模板50的一部分(中心部)進行非黏合(non-sticky)處理時,可通過臨時黏合部55僅黏合於邊緣部分。並且,在脫黏時,溶劑滲透到邊緣部分,從而通過溶解臨時黏合部55來實現脫黏。該方法的優點在於,在進行黏合和脫黏期間,在除了掩模100、模板50的邊緣區域以外的剩餘部分,不發生直接損失或者在脫黏時不會因黏合材料殘餘物(residue)而發生缺陷等。另外,與熱脫黏法不同,脫黏時不需要高溫的熱處理過程,因此能夠相對地節省工藝費用。As another example, a room temperature debonding method based on chemical treatment of CM, application of ultrasound US, application of UV, and the like can be used. When a non-sticky process is performed on a part (central portion) of the mask 100 or the template 50, the temporary adhesive portion 55 can be adhered to only the edge portion. In addition, at the time of debonding, the solvent penetrates to the edge portion, thereby debonding is achieved by dissolving the temporary bonding portion 55. The advantage of this method is that during the bonding and debonding, in the remaining part except the edge area of the mask 100 and the template 50, no direct loss occurs or no residue due to the adhesive material is caused during debonding. Defects occur, etc. In addition, unlike the thermal debonding method, a high-temperature heat treatment process is not required during debonding, so that the process cost can be saved relatively.

圖19是將本發明的一實施例涉及的掩模100黏合在框架200的狀態的概略圖。FIG. 19 is a schematic view of a state in which a mask 100 according to an embodiment of the present invention is adhered to a frame 200.

參照圖19,一個掩模100可以黏合在一個單元區域CR上。Referring to FIG. 19, a mask 100 may be adhered to a unit region CR.

由於框架200的掩模單元片材部220具有薄的厚度,在對掩模100施加拉伸力的狀態下,黏合於掩模單元片材部220時,掩模100中殘存的拉伸力作用於掩模單元片材部220以及掩模單元區域CR,也有可能使它們變形。因此,應該在對掩模100不施加拉伸力的狀態下,將掩模100黏合於掩模單元片材部220。本發明將掩模100附著在模板50上,只需將模板50裝載於框架200上,就能完成使掩模100與框架200的掩模單元區域CR對應的過程,因此,在這一過程中,可以不對掩模100施加任何拉伸力。由此,可以防止因施加到掩模100的拉伸力作為張力(tension)反向作用於框架200而導致框架200(或者掩模單元片材部220)變形。Since the mask unit sheet portion 220 of the frame 200 has a thin thickness, when a tensile force is applied to the mask 100, the tensile force remaining in the mask 100 acts when the mask unit sheet portion 220 is adhered to the mask unit sheet portion 220. The mask unit sheet portion 220 and the mask unit region CR may deform them. Therefore, the mask 100 should be adhered to the mask unit sheet portion 220 without applying a tensile force to the mask 100. The present invention attaches the mask 100 to the template 50, and only needs to load the template 50 on the frame 200 to complete the process of making the mask 100 correspond to the mask unit region CR of the frame 200. Therefore, in this process It is not necessary to apply any tensile force to the mask 100. Thereby, it is possible to prevent the frame 200 (or the mask unit sheet portion 220) from being deformed due to the tensile force applied to the mask 100 acting as a tension on the frame 200 in the reverse direction.

現有的圖1的掩模10包括6個單元C1~C6,因此具有較長的長度,而本發明的掩模100包括一個單元C,因此具有較短的長度,因此PPA扭曲的程度能夠變小。假設包括多個單元C1~C6、...的掩模10的長度為1m,並且在1m的總長度中發生10μm的PPA誤差,則本發明的掩模100可以隨著相對長度減小(相當於單元C數量減少)而將上述誤差範圍變成1/n。例如,本發明的掩模100長度為100mm,則具有從現有的掩模10的1m減小為1/10的長度,因此在100mm的總長度中發生1μm的PPA誤差,顯著降低對準誤差。The existing mask 10 of FIG. 1 includes 6 cells C1 to C6, and thus has a longer length, and the mask 100 of the present invention includes one cell C, and therefore has a shorter length, so that the degree of PPA distortion can be reduced. . Assuming that the length of the mask 10 including a plurality of cells C1 to C6,... Is 1 m, and a PPA error of 10 μm occurs in the total length of 1 m, the mask 100 of the present invention can decrease with the relative length (equivalent As the number of cells C decreases), the above error range becomes 1 / n. For example, if the length of the mask 100 of the present invention is 100 mm, it has a length reduced from 1 m to 1/10 of the existing mask 10, so a PPA error of 1 μm occurs in the total length of 100 mm, which significantly reduces the alignment error.

另一方面,如果掩模100具備多個單元C,並且即使使各個單元C與框架200的各個單元區域CR對應也處於對準誤差最小化的範圍內,則掩模100也可以與框架200的多個掩模單元區域CR對應。或者,具有多個單元C的掩模100也可以與一個掩模單元區域CR對應。在這種情況下,也考慮到基於對準的工藝時間和生產性,掩模100優選具備盡可能少量的單元C。On the other hand, if the mask 100 is provided with a plurality of cells C, and the alignment error is minimized even if each cell C corresponds to each cell region CR of the frame 200, the mask 100 may be aligned with the frame 200. The plurality of mask cell regions CR correspond. Alternatively, the mask 100 having a plurality of cells C may correspond to one mask cell region CR. In this case, also in consideration of the process time and productivity based on the alignment, the mask 100 preferably has as few cells C as possible.

在本發明中,由於只需使掩模100的一個單元C對應並確認對準狀態即可,因此與同時使多個單元C(C1~C6)對應並需要確認全部的對準狀態的現有方法(參照圖1)相比,可以顯著縮短製造時間。In the present invention, since it is only necessary to make one cell C of the mask 100 correspond to and confirm the alignment state, the conventional method of corresponding to a plurality of cells C (C1 to C6) at the same time and to confirm all the alignment states is required (See Fig. 1) Compared with this, the manufacturing time can be significantly shortened.

即,本發明的框架一體型掩模的製造方法與現有方法相比,能夠明顯縮短時間,該現有方法需要通過使包含於6個掩模100的各個單元C11~C16分別與各個單元區域CR11~CR16對應並確認各個對準狀態的6次過程,同時使6個單元C1~C6對應,並且同時全部確認6個單元C1~C6的對準狀態。That is, the manufacturing method of the frame-integrated mask of the present invention can significantly reduce the time compared with the conventional method. This conventional method requires that each of the cells C11 to C16 included in the six masks 100 and each of the cell regions CR11 to CR11 ~ CR16 corresponds to and confirms the 6 processes of each alignment state, and simultaneously makes 6 cells C1 ~ C6 correspond, and simultaneously confirms the alignment states of 6 cells C1 ~ C6.

另外,在本發明的框架一體型掩模的製造方法中,使30個掩模100分別與30個單元區域CR(CR11~CR56)對應並對準的30次的過程中的產品收率,可以明顯高於使分別包括6個單元C1~C6的5個掩模10(參照圖1的(a))與框架對應並對準的5次過程中的現有產品的收率。由於對每次對應於6個單元C的區域對準6個單元C1~C6的現有方法是明顯繁瑣且困難的作業,產品收率低。In addition, in the method for manufacturing a frame-integrated mask of the present invention, the yield of the product during the 30 times corresponding to and aligning 30 masks 100 with 30 cell regions CR (CR11 to CR56) can be obtained. It is significantly higher than the yield of the existing product during the 5 times that the five masks 10 (refer to (a) in FIG. 1) including the six cells C1 to C6 correspond to the frame and are aligned. Because the existing method of aligning the six cells C1 to C6 to the area corresponding to the six cells C each time is a significantly tedious and difficult operation, the product yield is low.

另一方面,如圖11的步驟(b)所述,當通過層疊工序將掩模金屬膜110黏合到模板50時,約100℃的溫度可以施加到掩模金屬膜110。由此,可以在對掩模金屬膜110施加一部分拉伸力的狀態下,將其黏合到模板50。之後,當掩模100黏合到框架200上,並且模板與掩模100分離時,掩模100可以收縮規定量。On the other hand, as described in step (b) of FIG. 11, when the mask metal film 110 is adhered to the template 50 through a lamination process, a temperature of about 100 ° C. may be applied to the mask metal film 110. This allows the mask metal film 110 to be adhered to the template 50 in a state where a part of the tensile force is applied to the mask metal film 110. After that, when the mask 100 is adhered to the frame 200 and the template is separated from the mask 100, the mask 100 may be contracted by a predetermined amount.

在各個掩模100全部黏合於對應的掩模單元區域CR後,模板50和掩模100分離時,多個掩模100沿著相反方向施加收縮的張力,因此抵消該力量,在掩模單元片材部220不發生變形。例如,在附著於CR11單元區域的掩模100與附著於CR12單元區域的掩模100之間的第一柵格片材部223中,朝向附著於CR11單元區域的掩模100的右側方向作用的張力TS與朝向附著於CR12單元區域的掩模100的左側方向作用的張力可相互抵消。由此,最大限度地降低基於張力TS的框架200(或者掩模單元片材部220)的變形,從而能夠最大限度地降低掩模100(或者掩模圖案P)的對準誤差。After each mask 100 is adhered to the corresponding mask unit region CR, when the template 50 and the mask 100 are separated, the plurality of masks 100 apply a contracting tension in the opposite direction, so the force is cancelled out in the mask unit sheet. The material portion 220 is not deformed. For example, in the first grid sheet portion 223 between the mask 100 attached to the CR11 unit area and the mask 100 attached to the CR12 unit area, the first grid sheet portion 223 acts toward the right side of the mask 100 attached to the CR11 unit area. The tension TS and the tension acting in the left direction of the mask 100 attached to the CR12 unit region can cancel each other. This minimizes the deformation of the frame 200 (or the mask unit sheet portion 220) by the tension TS, and can minimize the alignment error of the mask 100 (or the mask pattern P).

圖20是本發明的一實施例涉及的利用框架一體型掩模100、200的OLED像素沉積裝置1000的概略圖。FIG. 20 is a schematic diagram of an OLED pixel deposition apparatus 1000 using frame-integrated masks 100 and 200 according to an embodiment of the present invention.

參照圖20,OLED像素沉積裝置1000包括:磁板300,容納有磁體310,並且排布有冷卻水管350;沉積源供給部500,從磁板300的下部供給有機物源600。Referring to FIG. 20, the OLED pixel deposition apparatus 1000 includes: a magnetic plate 300 that houses a magnet 310 and is arranged with cooling water pipes 350; a deposition source supply unit 500 that supplies an organic substance source 600 from a lower portion of the magnetic plate 300.

磁板300與沉積源沉積部500之間可以插入有用於沉積有機物源600的玻璃等目標基板900。目標基板900上可以以緊貼或非常接近的方式配置有使有機物源600按不同像素沉積的框架一體型掩模100、200(或者FMM)。磁體310可以產生磁場,並通過磁場,緊貼到目標基板900。A target substrate 900 such as glass for depositing an organic material source 600 may be interposed between the magnetic plate 300 and the deposition source deposition portion 500. The target substrate 900 may be provided with a frame-integrated mask 100 or 200 (or FMM) in which the organic source 600 is deposited in different pixels in a close or very close manner. The magnet 310 can generate a magnetic field, and can be closely attached to the target substrate 900 through the magnetic field.

沉積源供給部500可以往返於左右路徑並供給有機物源600,由沉積源供給部500供給的有機物源600可以通過形成於框架一體型掩模100、200的圖案P後沉積於目標基板900的一側。通過框架一體型掩模100、200的圖案P後沉積的有機物源600,可以用作OLED的像素700。The deposition source supply unit 500 can go back and forth to the left and right paths to supply the organic material source 600, and the organic material source 600 supplied by the deposition source supply unit 500 can be deposited on a target substrate 900 through a pattern P formed on the frame-integrated masks 100 and 200. side. The organic matter source 600 deposited after passing through the pattern P of the frame-integrated masks 100 and 200 can be used as the pixel 700 of the OLED.

為了防止由於陰影效應(Shadow Effect)發生的像素700的不均勻沉積,框架一體型掩模100、200的圖案可以傾斜地形成S(或者以錐形S形成)。沿著傾斜表面,在對角線方向上通過圖案的有機物源600,也可以有助於像素700的形成,因此,能夠整體上厚度均勻地沉積像素700。In order to prevent uneven deposition of the pixels 700 due to a shadow effect, the pattern of the frame-integrated masks 100 and 200 may be formed S (or formed in a cone S) obliquely. The organic matter source 600 passing the pattern in the diagonal direction along the inclined surface can also contribute to the formation of the pixels 700, and therefore, the pixels 700 can be uniformly deposited throughout the thickness.

如上所述,本發明列舉了優選實施例進行圖示和說明,但是不限於上述實施例,在不脫離本發明的精神的範圍內,本領域技術人員能夠進行各種變形和變更。這種變形及變更均落在本發明和所附的申請專利範圍的範圍內。As described above, the present invention has illustrated and described preferred embodiments, but is not limited to the above embodiments, and those skilled in the art can make various modifications and changes without departing from the spirit of the present invention. Such deformations and changes fall within the scope of the present invention and the appended patent applications.

1‧‧‧掩模1‧‧‧Mask

2‧‧‧框架 2‧‧‧ frame

3‧‧‧夾持器 3‧‧‧ Grip

4‧‧‧y軸移動軌道 4‧‧‧y-axis moving track

5‧‧‧Z軸移動軌道 5‧‧‧Z axis moving track

10‧‧‧框架一體型掩模的製造裝置 10‧‧‧ Frame manufacturing mask manufacturing device

15‧‧‧工作臺 15‧‧‧Workbench

20‧‧‧台部 20‧‧‧ Taiwan

21‧‧‧Y軸方向移動裝載部 21‧‧‧Y-axis moving loading section

23‧‧‧框架對準單元 23‧‧‧Frame alignment unit

25‧‧‧框架支撐部;框架支撐單元 25‧‧‧Frame support; frame support unit

26‧‧‧中空空間 26‧‧‧Hollow Space

27‧‧‧台移動部 27‧‧‧ mobile units

30‧‧‧夾持部 30‧‧‧Clamping section

31‧‧‧夾持單元 31‧‧‧Clamping unit

32‧‧‧吸附單元 32‧‧‧ Adsorption unit

33‧‧‧輔助單元 33‧‧‧ auxiliary unit

35‧‧‧夾持移動單元 35‧‧‧ Holding mobile unit

37‧‧‧連接單元 37‧‧‧Connecting unit

40‧‧‧夾持移動部 40‧‧‧Clamping and moving part

41‧‧‧基座單元 41‧‧‧ base unit

43‧‧‧夾持支撐單元 43‧‧‧ clamping support unit

44‧‧‧基座軌道單元 44‧‧‧ base track unit

45‧‧‧夾持軌道單元 45‧‧‧Clamp rail unit

50、50a、50b‧‧‧模板(template) 50, 50a, 50b‧‧‧ template

51‧‧‧激光通過孔 51‧‧‧laser through hole

55‧‧‧臨時黏合部 55‧‧‧Temporary Adhesive Section

56‧‧‧芯膜 56‧‧‧ core film

57a、57b‧‧‧黏合層 57a, 57b‧‧‧Adhesive layer

58a、58b‧‧‧剝離膜/離型膜 58a, 58b ‧‧‧ release film / release film

60‧‧‧頭部 60‧‧‧Head

61、61a、61b‧‧‧激光單元 61, 61a, 61b‧‧‧‧laser unit

65‧‧‧相機單元 65‧‧‧ camera unit

67‧‧‧不良分析單元 67‧‧‧Bad analysis unit

70、71、75‧‧‧頭移動部 70, 71, 75‧‧‧ head moving parts

76‧‧‧X軸引導件 76‧‧‧X-axis guide

80‧‧‧隔振器 80‧‧‧Isolator

90‧‧‧下部支撐單元 90‧‧‧ lower support unit

95‧‧‧吸附部 95‧‧‧ Adsorption Department

96‧‧‧真空流路 96‧‧‧Vacuum flow path

100‧‧‧掩模 100‧‧‧Mask

110‧‧‧掩模膜 110‧‧‧mask film

110'‧‧‧掩模金屬膜 110'‧‧‧Mask metal film

200‧‧‧框架 200‧‧‧ frame

210‧‧‧邊緣框架部 210‧‧‧Edge Frame Department

220、220’‧‧‧掩模單元片材部 220、220’‧‧‧‧Mask unit sheet section

221‧‧‧邊緣片材部 221‧‧‧Edge Sheet Department

223‧‧‧第一柵格片材部 223‧‧‧First grid sheet department

225‧‧‧第二柵格片材部 225‧‧‧Second Grid Sheet Department

300‧‧‧磁板 300‧‧‧ Magnetic plate

310‧‧‧磁體 310‧‧‧Magnet

350‧‧‧冷卻水管 350‧‧‧ cooling water pipe

500‧‧‧沉積源供給部 500‧‧‧Deposition source supply department

600‧‧‧有機物源 600‧‧‧ Organic Source

700‧‧‧像素 700‧‧‧ pixels

900‧‧‧目標基板 900‧‧‧ target substrate

1000‧‧‧OLED像素沉積裝置 1000‧‧‧OLED pixel deposition device

C、C1~C6、C11~C16‧‧‧單元、掩模單元 C, C1 ~ C6, C11 ~ C16‧‧‧ units, mask units

CR、CR11~CR56‧‧‧掩模單元區域 CR, CR11 ~ CR56 ‧‧‧ mask unit area

DM‧‧‧虛擬部、掩模虛擬部 DM‧‧‧Virtual Department, Mask Virtual Department

F1~F4‧‧‧拉伸力 F1 ~ F4‧‧‧Stretching force

L‧‧‧激光 L‧‧‧laser

P‧‧‧掩模圖案 P‧‧‧Mask pattern

R‧‧‧中空區域 R‧‧‧ hollow area

VS‧‧‧吸附力 VS‧‧‧Adsorption

W‧‧‧焊接 W‧‧‧welding

WB‧‧‧焊縫 WB‧‧‧ Weld

圖1以及圖2是將現有的掩模黏合到框架上的過程的概略圖。1 and 2 are schematic diagrams of a process of bonding a conventional mask to a frame.

圖3是在現有的掩模拉伸的過程中,單元之間發生對準誤差的概略圖。 FIG. 3 is a schematic diagram of an alignment error occurring between cells during a conventional mask stretching process.

圖4是本發明的一實施例涉及的框架一體型掩模的主視圖以及側剖視圖。 4 is a front view and a side cross-sectional view of a frame-integrated mask according to an embodiment of the present invention.

圖5是本發明的一實施例涉及的框架的主視圖以及側剖視圖。 5 is a front view and a side sectional view of a frame according to an embodiment of the present invention.

圖6是本發明的一實施例涉及的框架的製造過程的概略圖。 6 is a schematic diagram of a manufacturing process of a frame according to an embodiment of the present invention.

圖7是本發明的另一實施例涉及的框架的製造過程的概略圖。 FIG. 7 is a schematic diagram of a manufacturing process of a frame according to another embodiment of the present invention.

圖8以及圖9是本發明的一實施例涉及的框架一體型掩模的製造裝置的俯視概略圖以及主視概略圖。 8 and 9 are a schematic plan view and a front view of a manufacturing apparatus of a frame-integrated mask according to an embodiment of the present invention.

圖10是本發明的一實施例涉及的框架一體型掩模的製造裝置的局部放大概略圖。 10 is a partially enlarged schematic view of a manufacturing apparatus of a frame-integrated mask according to an embodiment of the present invention.

圖11至12是本發明的一實施例涉及的在模板上黏合掩模金屬膜,並形成掩模,從而製造掩模支撐用的模板的過程的概略圖。 11 to 12 are schematic diagrams of a process of manufacturing a mask supporting template by bonding a mask metal film to a template and forming a mask according to an embodiment of the present invention.

圖13是本發明的一實施例涉及的臨時黏合部的放大截面概略圖。 FIG. 13 is an enlarged cross-sectional schematic view of a temporary adhesive portion according to an embodiment of the present invention.

圖14是將本發明的一實施例涉及的掩模支撐用的模板裝載在框架上的過程的概略圖。 14 is a schematic diagram of a process of loading a mask supporting template according to an embodiment of the present invention on a frame.

圖15是將本發明的一實施例涉及的模板裝載在框架上,以使掩模與框架的單元區域對應的狀態的概略圖。 15 is a schematic diagram of a state in which a template according to an embodiment of the present invention is mounted on a frame so that a mask corresponds to a unit region of the frame.

圖16是將本發明的一實施例涉及的掩模黏合到框架上的過程的概略圖。 16 is a schematic diagram of a process of bonding a mask according to an embodiment of the present invention to a frame.

圖17是通過本發明的一實施例涉及的吸附孔對掩模施加吸附力的狀態的概略圖。 FIG. 17 is a schematic diagram of a state where an adsorption force is applied to a mask through an adsorption hole according to an embodiment of the present invention.

圖18是將本發明的一實施例涉及的掩模黏合到框架上後,分離掩模和模板的過程的概略圖。 18 is a schematic diagram of a process of separating a mask and a template after a mask according to an embodiment of the present invention is adhered to a frame.

圖19是將本發明的一實施例涉及的掩模黏合在框架的狀態的概略圖。 FIG. 19 is a schematic view of a state where a mask according to an embodiment of the present invention is adhered to a frame.

圖20是利用本發明的一實施例涉及的框架一體型掩模的OLED像素沉積裝置的概略圖。 20 is a schematic diagram of an OLED pixel deposition apparatus using a frame-integrated mask according to an embodiment of the present invention.

Claims (15)

一種框架一體型掩模的製造裝置,其特徵在於,包括: 台部,用於安裝並支撐框架; 夾持部,對模板進行夾持,所述模板上黏合並支撐有所述掩模; 夾持移動部,沿著X、Y、Z、θ軸中的至少一個方向移動所述夾持部; 頭部,向所述掩模的焊接部照射激光,並感測所述掩模的對準狀態;以及 頭移動部,沿著X、Y、Z軸中的至少一個方向移動所述頭部, 其中,所述夾持部以吸附所述模板的上部表面的至少一部分的方式進行夾持。A device for manufacturing a frame-integrated mask, comprising: Table section for mounting and supporting the frame; A clamping portion for clamping a template, and the template is adhered and supported with the mask; A clamping moving part, which moves the clamping part along at least one of the X, Y, Z, and θ axes; A head part, irradiating a laser to a welding part of the mask, and sensing an alignment state of the mask; and A head moving part that moves the head along at least one of the X, Y, and Z directions, The clamping portion is configured to clamp at least a part of an upper surface of the template. 如請求項1所述的框架一體型掩模的製造裝置,其特徵在於, 所述台部包括用於對準所述框架的位置的框架對準單元。The apparatus for manufacturing a frame-integrated mask according to claim 1, wherein The table portion includes a frame alignment unit for aligning the position of the frame. 如請求項1所述的框架一體型掩模的製造裝置,其特徵在於, 所述台部包括用於加熱所述框架的加熱單元。The apparatus for manufacturing a frame-integrated mask according to claim 1, wherein The table portion includes a heating unit for heating the frame. 如請求項1所述的框架一體型掩模的製造裝置,其特徵在於, 所述夾持部包括: 夾持單元,用於夾持所述模板; 夾持移動單元,沿著X、Y、Z、θ軸中的至少一個方向移動所述夾持單元;以及 連接單元,將所述夾持移動單元連接到所述夾持移動部。The apparatus for manufacturing a frame-integrated mask according to claim 1, wherein The clamping portion includes: A clamping unit for clamping the template; A clamping moving unit that moves the clamping unit along at least one of the X, Y, Z, and θ axes; and A connection unit that connects the clamp moving unit to the clamp moving portion. 如請求項4所述的框架一體型掩模的製造裝置,其特徵在於, 所述夾持單元形成有彼此隔開的多個吸附單元,多個所述吸附單元用於對所述模板施加吸壓。The apparatus for manufacturing a frame-integrated mask according to claim 4, wherein The clamping unit is formed with a plurality of suction units spaced apart from each other, and the plurality of suction units are used to apply suction pressure to the template. 如請求項5所述的框架一體型掩模的製造裝置,其特徵在於, 多個所述吸附單元配置成與所述掩模的焊接部在Z軸上的區域不重疊。The apparatus for manufacturing a frame-integrated mask according to claim 5, wherein A plurality of the adsorption units are arranged so as not to overlap the region on the Z axis of the soldered portion of the mask. 如請求項1所述的框架一體型掩模的製造裝置,其特徵在於, 所述夾持移動部包括: 基座單元; 夾持支撐單元,配置在所述基座單元上以支撐所述夾持部;以及 夾持軌道單元,用於移動所述基座單元, 其中,所述基座單元在沿著Z軸方向與所述台部隔開的區域內移動,使得所述夾持部進入到所述台部的上部。The apparatus for manufacturing a frame-integrated mask according to claim 1, wherein The clamping and moving part includes: Base unit A clamping support unit configured on the base unit to support the clamping portion; and A clamping rail unit for moving the base unit, Wherein, the base unit moves in a region spaced apart from the table portion along the Z-axis direction, so that the clamping portion enters an upper portion of the table portion. 如請求項1所述的框架一體型掩模的製造裝置,其特徵在於, 所述頭部包括激光單元,所述激光單元對所述掩模照射激光,以將所述掩模與所述框架進行焊接,或者對所述掩模照射激光,以進行激光修整。The apparatus for manufacturing a frame-integrated mask according to claim 1, wherein The head includes a laser unit that irradiates the mask with laser light to weld the mask to the frame or irradiates laser light to the mask to perform laser trimming. 如請求項8所述的框架一體型掩模的製造裝置,其特徵在於, 一對所述激光單元彼此隔開配置, 各個所述激光單元分別對所述掩模的一側及另一側的焊接部照射激光。The apparatus for manufacturing a frame-integrated mask according to claim 8, wherein A pair of said laser units are spaced apart from each other, Each of the laser units irradiates laser light to the welding portions on one side and the other side of the mask, respectively. 如請求項1所述的框架一體型掩模的製造裝置,其特徵在於, 所述框架包括: 邊緣框架部,其包括中空區域; 掩模單元片材部,具備多個掩模單元區域,並且連接於所述邊緣框架部。The apparatus for manufacturing a frame-integrated mask according to claim 1, wherein The framework includes: An edge frame portion including a hollow region; The mask unit sheet portion includes a plurality of mask unit regions and is connected to the edge frame portion. 如請求項10所述的框架一體型掩模的製造裝置,其特徵在於, 所述框架沿著第一方向以及垂直於第一方向的第二方向中的至少一個方向,具備多個所述掩模單元區域。The apparatus for manufacturing a frame-integrated mask according to claim 10, wherein The frame includes a plurality of the mask unit regions along at least one of a first direction and a second direction perpendicular to the first direction. 如請求項10所述的框架一體型掩模的製造裝置,其特徵在於, 多個吸附孔形成在具有所述掩模單元區域的掩模單元片材部的與角部隔開規定距離的部分上。The apparatus for manufacturing a frame-integrated mask according to claim 10, wherein A plurality of suction holes are formed in a portion of the mask unit sheet portion having the mask unit region at a predetermined distance from the corner portion. 如請求項12所述的框架一體型掩模的製造裝置,其特徵在於, 所述台部進一步包括下部支撐單元,所述下部支撐單元對所述框架的下部產生吸壓。The apparatus for manufacturing a frame-integrated mask according to claim 12, wherein The table portion further includes a lower support unit that generates suction pressure on a lower portion of the frame. 如請求項13所述的框架一體型掩模的製造裝置,其特徵在於, 所述下部支撐單元形成有至少一個真空流路,所述真空流路將從外部的吸壓產生單元生成的吸壓傳遞到所述吸附孔。The apparatus for manufacturing a frame-integrated mask according to claim 13, wherein The lower support unit is formed with at least one vacuum flow path, and the vacuum flow path transmits the suction pressure generated from an external suction pressure generating unit to the suction hole. 如請求項1所述的框架一體型掩模的製造裝置,其特徵在於, 所述掩模上形成有掩模圖案,所述掩模通過臨時黏合部黏合在所述模板上。The apparatus for manufacturing a frame-integrated mask according to claim 1, wherein A mask pattern is formed on the mask, and the mask is adhered to the template through a temporary adhesive portion.
TW108113411A 2018-04-20 2019-04-17 Producing device of mask integrated frame TW201945571A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20180046330 2018-04-20
KR10-2018-0046330 2018-04-20
KR10-2018-0126078 2018-10-22
KR1020180126078A KR102011723B1 (en) 2018-04-20 2018-10-22 Producing device of mask integrated frame

Publications (1)

Publication Number Publication Date
TW201945571A true TW201945571A (en) 2019-12-01

Family

ID=67807272

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108113411A TW201945571A (en) 2018-04-20 2019-04-17 Producing device of mask integrated frame

Country Status (4)

Country Link
KR (3) KR102011723B1 (en)
CN (1) CN110385527B (en)
TW (1) TW201945571A (en)
WO (1) WO2019203510A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI771976B (en) * 2020-04-09 2022-07-21 南韓商奧魯姆材料股份有限公司 Template for supporting mask and producing method thereof and producing method of mask and producing method of mask integrated frame

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210026168A (en) * 2019-08-29 2021-03-10 주식회사 오럼머티리얼 Template for supporting mask, producing method of template for supporting mask and producing method of mask integrated frame
KR102882349B1 (en) * 2020-05-04 2025-11-06 삼성디스플레이 주식회사 Apparatus for manufacturing mask assembly, method for manufacturing mask assembly and method for manufacturing display device
KR102833378B1 (en) * 2020-06-03 2025-07-14 삼성디스플레이 주식회사 Device for manufacturing mask and the method for manufacturing using it
KR102724543B1 (en) * 2020-07-23 2024-11-04 삼성디스플레이 주식회사 Mask chuck and mask manufacturing apparatus comprising it
JP7743186B2 (en) * 2021-01-08 2025-09-24 株式会社Magnolia White Vapor deposition mask manufacturing apparatus and vapor deposition mask manufacturing method
KR102908566B1 (en) * 2023-12-19 2026-01-08 한국과학기술연구원 Method for manufacturing optical waveguide having 3d mode converter using etching mask for fabricating 3d mode converter

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100534580B1 (en) * 2003-03-27 2005-12-07 삼성에스디아이 주식회사 Deposition mask for display device and Method for fabricating the same
KR100742385B1 (en) * 2006-01-23 2007-07-24 삼성에스디아이 주식회사 Mask alignment device and its alignment method
JP2008115411A (en) * 2006-11-01 2008-05-22 Seiko Epson Corp Vapor deposition mask manufacturing method, vapor deposition mask, and mask vapor deposition method
JP4985227B2 (en) * 2007-08-24 2012-07-25 大日本印刷株式会社 Vapor deposition mask, vapor deposition mask device, vapor deposition mask manufacturing method, vapor deposition mask device production method, and vapor deposition mask sheet-like member production method
KR100947442B1 (en) * 2007-11-20 2010-03-12 삼성모바일디스플레이주식회사 Vertical deposition mask manufacturing apparatus and manufacturing method of vertical deposition mask using same
KR101272299B1 (en) * 2011-08-25 2013-06-07 (주)한 송 Apparatus for manufacturing divided mask frame assembly for manufacturing AMOLED panel
CN104097027A (en) * 2013-04-10 2014-10-15 昆山思拓机器有限公司 Manufacturing method of OLED (Organic Light Emitting Diode) metal mask plate
JP2015127441A (en) * 2013-12-27 2015-07-09 大日本印刷株式会社 Method for manufacturing vapor deposition mask device
CN107425135A (en) * 2017-05-05 2017-12-01 京东方科技集团股份有限公司 Mask plate fixing base plate and mask plate fixing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI771976B (en) * 2020-04-09 2022-07-21 南韓商奧魯姆材料股份有限公司 Template for supporting mask and producing method thereof and producing method of mask and producing method of mask integrated frame

Also Published As

Publication number Publication date
KR102152686B1 (en) 2020-09-07
CN110385527B (en) 2021-10-29
CN110385527A (en) 2019-10-29
KR20190122598A (en) 2019-10-30
KR102011723B1 (en) 2019-08-19
WO2019203510A1 (en) 2019-10-24
KR20190122599A (en) 2019-10-30
KR102152687B1 (en) 2020-09-07

Similar Documents

Publication Publication Date Title
CN110385527B (en) Frame-integrated mask manufacturing device
TWI731482B (en) Template for supporting mask, template for supporting mask metal sheet, producing method of template for supporting mask and producing method of mask integrated frame
TWI731481B (en) Producing device of mask integrated frame
TWI825149B (en) Producing method of mask integrated frame and frame
TWI758661B (en) Template for supporting mask and producing method thereof and producing method of mask integrated frame
TWI810381B (en) Template for supporting mask and producing method thereof and producing method of mask integrated frame
CN111224019B (en) Mask supporting template, manufacturing method thereof, and manufacturing method of mask-frame connector
CN110318019A (en) The manufacturing method of mask, mask support buffer substrate and its manufacturing method
KR101988498B1 (en) Template for supporting mask and producing methoe thereof and producing method of mask integrated frame
KR102217811B1 (en) Producing method of template for supporting mask and producing method of mask integrated frame
CN111218644A (en) Method for manufacturing frame-integrated mask and method for separating/replacing mask of frame-integrated mask
KR102196797B1 (en) Template for supporting mask and producing methoe thereof and producing method of mask integrated frame
KR101986527B1 (en) Producing method of mask integrated frame and frame
TW202032833A (en) Producing method of mask, producing method of template for supporting mask and producing method of mask integrated frame
TWI826497B (en) Template for supporting mask and producing methoe thereof and producing method of mask integrated frame
TW201946311A (en) Manufacturing method of mask, buffer substrate for supporting mask and manufacturing method thereof
KR20200137592A (en) Template for supporting mask and producing method thereof and mask integrated frame and producing method thereof
CN120776238A (en) Mask manufacturing method, mask support template manufacturing method, and frame-integrated mask manufacturing method
KR20200143313A (en) Template for supporting mask
KR20210023918A (en) Template for supporting mask and producing method of mask integrated frame
KR20200098297A (en) Producing method of mask integrated frame
KR20200044639A (en) Producing method of mask, producing method of template for supporting mask and producing method of mask integrated frame