TW201947758A - 發光二極體薄片、顯示裝置、發光裝置、顯示裝置之製造方法及發光裝置之製造方法 - Google Patents

發光二極體薄片、顯示裝置、發光裝置、顯示裝置之製造方法及發光裝置之製造方法 Download PDF

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Publication number
TW201947758A
TW201947758A TW108107073A TW108107073A TW201947758A TW 201947758 A TW201947758 A TW 201947758A TW 108107073 A TW108107073 A TW 108107073A TW 108107073 A TW108107073 A TW 108107073A TW 201947758 A TW201947758 A TW 201947758A
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TW
Taiwan
Prior art keywords
light
layer
emitting
wiring
light emitting
Prior art date
Application number
TW108107073A
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English (en)
Chinese (zh)
Inventor
平賀広貴
黄鐘日
加藤大望
吉田学史
Original Assignee
日商東芝股份有限公司
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Application filed by 日商東芝股份有限公司 filed Critical 日商東芝股份有限公司
Publication of TW201947758A publication Critical patent/TW201947758A/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW108107073A 2018-03-02 2019-03-04 發光二極體薄片、顯示裝置、發光裝置、顯示裝置之製造方法及發光裝置之製造方法 TW201947758A (zh)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP2018-037436 2018-03-02
JP2018037435 2018-03-02
JP2018-037435 2018-03-02
JP2018037436 2018-03-02
JP2018-053535 2018-03-20
JP2018053535 2018-03-20
JP2018053534 2018-03-20
JP2018-053534 2018-03-20
JP2018174318 2018-09-18
JP2018-174318 2018-09-18

Publications (1)

Publication Number Publication Date
TW201947758A true TW201947758A (zh) 2019-12-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW108107073A TW201947758A (zh) 2018-03-02 2019-03-04 發光二極體薄片、顯示裝置、發光裝置、顯示裝置之製造方法及發光裝置之製造方法

Country Status (2)

Country Link
TW (1) TW201947758A (ja)
WO (1) WO2019168187A1 (ja)

Families Citing this family (16)

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KR102626452B1 (ko) * 2019-01-15 2024-01-18 삼성디스플레이 주식회사 발광 소자의 제조방법 및 발광 소자를 포함하는 표시 장치
JP7617356B2 (ja) * 2019-10-01 2025-01-20 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
FR3105591B1 (fr) * 2019-12-20 2022-10-07 Commissariat Energie Atomique Procede de fabrication d’une couche de nitrure d’aluminium texture
CN113451108B (zh) * 2020-03-24 2024-06-25 中国科学院苏州纳米技术与纳米仿生研究所 一种超柔性透明半导体薄膜及其制备方法
CN113497077A (zh) * 2020-04-03 2021-10-12 京东方科技集团股份有限公司 无机发光二极管基板及其制备方法
JP2024099071A (ja) * 2021-03-17 2024-07-25 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
CN116783640A (zh) * 2021-03-29 2023-09-19 日亚化学工业株式会社 图像显示装置的制造方法和图像显示装置
WO2022209748A1 (ja) * 2021-03-29 2022-10-06 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
CN116897383A (zh) * 2021-03-30 2023-10-17 日亚化学工业株式会社 图像显示装置的制造方法和图像显示装置
WO2023058308A1 (ja) * 2021-10-05 2023-04-13 株式会社ジャパンディスプレイ 発光装置および発光装置形成基板
KR20230082726A (ko) * 2021-12-01 2023-06-09 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
JP7727762B2 (ja) * 2022-01-28 2025-08-21 株式会社ジャパンディスプレイ 発光装置
CN118556301A (zh) * 2022-01-28 2024-08-27 株式会社日本显示器 发光装置以及发光装置形成基板
CN115206198A (zh) 2022-07-20 2022-10-18 Tcl华星光电技术有限公司 拼接屏及显示装置
CN118116896A (zh) * 2022-11-30 2024-05-31 成都辰显光电有限公司 显示面板、制作方法及显示装置
WO2025033154A1 (ja) * 2023-08-07 2025-02-13 株式会社ジャパンディスプレイ 窒化物半導体デバイスの製造方法および窒化物半導体デバイス

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JPH11121811A (ja) * 1997-10-16 1999-04-30 Gifu Prefecture Kenkyu Kaihatsu Zaidan ３色ｌｅｄとそれを用いた表示パネル及び表示装置と製法
JP3690340B2 (ja) * 2001-03-06 2005-08-31 ソニー株式会社 半導体発光素子及びその製造方法
JP4474441B2 (ja) * 2007-06-29 2010-06-02 株式会社沖データ 発光パネル、表示装置及び光源装置
JP5403497B2 (ja) * 2007-09-05 2014-01-29 独立行政法人物質・材料研究機構 結晶成長用基板とこれを用いた結晶成長方法
JP2012182247A (ja) * 2011-02-28 2012-09-20 Tdk Corp 発光体
DE102012109460B4 (de) * 2012-10-04 2024-03-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Leuchtdioden-Displays und Leuchtdioden-Display
JP2014154673A (ja) * 2013-02-07 2014-08-25 Seiko Epson Corp 映像表示デバイスおよびプロジェクター
US20170260651A1 (en) * 2014-11-24 2017-09-14 Innosys, Inc. Gallium Nitride Growth on Silicon
US9368549B1 (en) * 2015-09-02 2016-06-14 Nthdegree Technologies Worldwide Inc. Printed mesh defining pixel areas for printed inorganic LED dies

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