TW202111148A - 包括介電層之結構、其形成方法及執行形成方法的反應器系統 - Google Patents

包括介電層之結構、其形成方法及執行形成方法的反應器系統 Download PDF

Info

Publication number
TW202111148A
TW202111148A TW109128204A TW109128204A TW202111148A TW 202111148 A TW202111148 A TW 202111148A TW 109128204 A TW109128204 A TW 109128204A TW 109128204 A TW109128204 A TW 109128204A TW 202111148 A TW202111148 A TW 202111148A
Authority
TW
Taiwan
Prior art keywords
reaction chamber
precursor
substrate
species
adsorbed
Prior art date
Application number
TW109128204A
Other languages
English (en)
Other versions
TWI895278B (zh
Inventor
張彥
野澤俊久
Original Assignee
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 filed Critical 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司
Publication of TW202111148A publication Critical patent/TW202111148A/zh
Application granted granted Critical
Publication of TWI895278B publication Critical patent/TWI895278B/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Spectroscopy & Molecular Physics (AREA)

Abstract

本發明揭露形成包含具有經改良性質(諸如，比方說，經改良之彈性模數及/或介電常數)之介電膜之結構的方法。例示性的膜可使用循環沉積製程形成。例示性方法使用活性物種來裂解(例如，對稱結構化)前驅物分子以形成高品質介電層。

Description

包括介電層之結構及其形成方法
本揭露大致上係關於用來形成適用於製造電子裝置之結構的方法及系統。本揭露之實例係關於使用電漿增強型循環沉積製程來形成包括低-k介電膜之結構的方法及系統。
於製造電子裝置期間，需要沉積具有低介電常數(低- к)之非晶形膜來用於若干應用，包括絕緣及減輕積體電路內的串擾。低- к膜可使用多種技術來沉積，包括，例如，電漿增強型化學氣相沉積(PECVD)。通常，利用PECVD，前驅物分子於氣相中過度解離，其導致沉積相當多孔的非晶膜。使用PECVD之介電材料沉積可具有相當低的k值；然而，膜亦可能具有不期望地低的彈性模數。
使用中性射束的PECVD方法產生改良的彈性模數並產生對稱結構化膜。然而，中性射束方法的成本較高且可能難以實施。
因此，所欲的是用於在基材上形成高品質材料(諸如高品質介電材料(例如，氧化矽))之改良系統及方法，及使用此類方法及/或系統所形成之結構。本節中描述的問題及解決方案之任何討論僅為了提供本揭露內文之目的而包括在本發明中，且不應視為承認在完成本發明時已知討論之任何或全部內容。
本揭露之各種實施例係關於形成包括高品質絕緣或介電膜之結構的方法。雖然在下文更詳細地討論本揭露之各種實施例應對先前方法及系統之缺點的方式，但大致上，本揭露之各種實施例提供包括使用活性物種來形成具有期望性質之膜的改良方法及系統。
根據本揭露之一實施例，提供一種於基材表面上沉積材料之方法，其包括以下步驟：(a)於反應腔室內提供上述基材；(b)於反應腔室內提供前驅物，其中上述前驅物吸附於基材表面上而形成經吸附物種；(c)於提供上述前驅物之後沖洗反應腔室；及(d)使上述經吸附物種暴露至活性物種以裂解上述經吸附物種及藉此於基材表面上形成經裂解經吸附物種。上述前驅物可係對稱結構化前驅物。對稱結構化前驅物可係跨越水平軸對稱的(symmetrical across a horizontal axis)。上述對稱結構化前驅物可包含氧。根據本揭露之一些實例，對稱結構化前驅物包含線性主鏈及連接至主鏈之複數個有機(例如，甲基、乙基、丙基)基團。上述前驅物可包含Si-O鍵。上述前驅物可包含矽及有機基團。根據此等實施例之各種態樣，前驅物可包含線性主鏈，上述線性主鏈包含沿上述主鏈且位在側鏈上之矽-氧及矽-碳-矽鍵。
舉特定實例來說，對稱結構化前驅物可包含以下中之一或多者：二甲基二甲氧矽烷(DMDMOS)、四甲基-1,3-二甲氧二矽氧烷(DMOTMDS)、四乙基-1,3-二甲氧二矽氧烷、四丙基-1,3-二甲氧二矽氧烷、四丁基-1,3-二甲氧二矽氧烷、四甲基-1,3-二乙氧二矽氧烷、四甲基-1,3-二丙氧二矽氧烷、四乙基-1,3-二乙氧二矽氧烷、四乙基-1,3-二丙氧二矽氧烷、四丙基-1,3-二乙氧二矽氧烷、四丙基-1,3-二丙氧二矽氧烷、四丁基-1,3-二乙氧二矽氧烷、或四丁基-1,3-二丙氧二矽氧烷。活性物種可於反應腔室內形成。
活性物種可使用遠端電漿形成。用來形成活性物種之氣體可包含氬、氦、或氬及氦兩者。用來形成活性物種之氣體可另外或替代地包含氫氣。於步驟(d)期間，電漿可經脈衝或連續地供應。上述方法可包含PEALD製程。上述方法可進一步包括於步驟(d)之後沖洗反應腔室之步驟。反應物氣體可於步驟(a)至(d)期間連續地饋送至反應腔室。於步驟(d)期間，一或多個有機基團可自經吸附物種，例如自前驅物分子之末端裂解。反應腔室內之壓力可係介於約500 Pa及約1000 Pa或約1000 Pa及約5000 Pa之間。反應腔室內之溫度可係介於約70 °C及約50 °C或約50 °C及約30 °C之間。低-к介電膜可藉由重複步驟(a)至(d)形成於基材上直至達成期望膜厚度為止。
結構可根據如文中所揭露之方法來形成。
反應器系統可經組態以進行如文中所揭露之方法。
相關領域中具有通常知識者將從已參照隨附圖式之某些實施例的下列詳細描述輕易明白這些及其他實施例；本發明並未受限於任何已揭露的一或多個特定實施例。
雖然在下文揭露某些實施例及實例，相關領域中具有通常知識者將瞭解本揭露延伸超出具體揭露的實施例及/或用途及其明顯修改及等效物。因此，期望本揭露之範疇不應受限於下文所描述之特定實施例。
本揭露大致上係關於形成結構，諸如適用於形成電子裝置之結構之方法；關於用於執行該等方法之反應器系統；及關於使用該等方法形成之結構。舉例來說，文中描述之系統及方法可用來形成(例如，非晶形)高品質絕緣或介電層。在一些實施例中，該等層係使用循環製程使用一或多種惰性製程氣體(例如，氬及氦)及還原製程氣體(例如，氫)來形成。舉例來說，使用於循環製程中之製程氣體可包含氬、氦、及氫中之一或多者。在一些實施例中，該等層係使用對稱結構化前驅物形成。
在本發明中，「氣體(gas)」可包括在室溫及壓力下為氣體、汽化固體、及/或汽化液體之材料，並取決於上下文可由單一氣體或氣體混合物構成。除了製程氣體以外的氣體(亦即，非通過氣體分配組合件(諸如噴淋頭)、其他氣體分配裝置、或類似者所引入的氣體)可用於例如密封反應空間，且可包括諸如稀有氣體的密封氣體。在一些實施例中，術語「前驅物(precursor)」可指參與生成另一化合物的化學反應之化合物，且具體係指構成膜基質或膜的主要骨架之化合物；術語「反應物(reactant)」可與術語前驅物(例如，Ar、He、及/或H2 )互換地使用。術語「惰性氣體(inert gas)」可指當施加RF功率時，不參與化學反應的氣體及/或激發前驅物的氣體，但不像反應物，上述惰性氣體無法在可察覺的程度上變為膜基質之一部分。例示性的惰性氣體包括He、Ar、N2 、及其任何組合。亦可使用氫作為惰性氣體及/或還原劑。
如本文中所使用，用語「基材(substrate)」可指可用以形成或在其上可形成裝置、電路、或膜之任何(多個)下伏材料。基材可包括塊材(諸如矽(例如單晶矽))、其他IV族材料(諸如鍺)、或化合物半導體材料(諸如II-VI族或III-V族半導體)，並可包括上覆或下伏於塊材的一或多層。進一步地，基材可包括各種部件(features)，諸如形成在基材之一層的至少一部分之內或之上的凹部、線、及類似者。部件可具有範圍在，例如，約1至約50或約3至約20之相當高的縱橫比。
本文中所使用之術語「膜」及/或「層」可指任何連續或不連續結構及材料，諸如藉由本文中所揭露方法而沉積之材料。例如，膜及/或層可包括二維材料、三維材料、奈米粒子或甚至部分或完整分子層或部分或完整原子層或原子及/或分子團簇。膜或層可包含具有針孔的材料或層，其可係至少部分連續的。
如本文所使用，術語「循環沉積」可指將前驅物(反應物)依序引入至反應腔室中，以在基材上方沉積膜，並且包括諸如原子層沉積及循環化學氣相沉積之沉積技術。
如本文所使用，術語「循環化學氣相沉積」可指任何製程，其中將基材依序暴露於兩種或更多種揮發性前驅物，該等前驅物在基材上反應及/或分解以產生所需沉積。
如本文中所使用，術語「原子層沉積(atomic layer deposition)」(ALD)可指氣相沉積製程，其中沉積循環(一般係複數個接續的沉積循環)係在反應腔室中實施。一般而言，在各循環期間，前驅物係化學吸附至沉積表面(例如基材表面或先前沉積的下伏表面，諸如來自先前ALD循環的材料)，形成不易與額外前驅物起反應的單層或次單層(亦即，自限制反應)。其後，可隨後將反應物(例如，另一前驅物、反應氣體、還原氣體、及/或惰性氣體)引入至反應腔室中，以用於在沉積表面上將經化學吸附之前驅物轉化為所欲材料。通常，此反應物能夠與前驅物進一步反應(例如，裂解經吸附前驅物的一部分)。此外，在每個循環期間，亦可利用沖洗步驟以在轉化經化學吸附的前驅物之後自反應腔室移除過量前驅物及/或自反應腔室移除過量反應物及/或反應副產物。進一步地，當使用(多個)前驅物組成物、反應性氣體、及沖洗(例如惰性載體)氣體的交替脈衝執行時，如本文中所使用之用語「原子層沉積(atomic layer deposition)」亦意指包括由相關用語指定的製程，諸如，化學氣相原子層沉積(chemical vapor atomic layer deposition)、原子層磊晶(atomic layer epitaxy, ALE)、分子束磊晶(MBE)、氣體源MBE、或有機金屬MBE、及化學束磊晶。PEALD係指一種ALD製程，其中在ALD步驟之一或多者期間施加電漿。
如本文所使用，「結構」可包括如文中所述之基材。結構可包括上覆基材的一或多個層，其係如文中所述來形成。
進一步地，在本揭露中，變數之任兩個數字可構成變數之可工作範圍，且所指示之任何範圍可包括或排除端點。此外，所指示的變數之任何數值(不管該等數值是否以「約」來指示)可指精確值或近似值並包括等效值，且在一些實施例中可指平均值、中值、代表值、多數值等。進一步地，在本揭露中，於一些實施例中，用語「包括(including)」、「由…構成(constituted by)」、及「具有(having)」係獨立地指「一般或廣泛地包含(typically or broadly comprising)」、「包含(comprising)」、「基本上由…組成(consisting essentially of)」、或「由…組成(consisting of)」。在本發明中，於一些實施例中，任何已定義之意義未必排除尋常及慣例意義。
在本揭露中，於一些實施例中，「連續地(continuously)」可指不中斷真空、在時間線上無中斷、無任何材料插入步驟、未改變處理條件、其後立即、作為下一步驟、或在兩結構間無有別於上述兩結構之插入的離散物理或化學結構之一或多者。
在本揭露中，對稱結構化前驅物可指具有跨越水平對稱平面之對稱性的前驅物。舉例來說，DMDMOS在跨越水平軸的上方及下方係對稱的，其中在水平軸上方及下方的各化學(例如，有機)基團係相同的，亦即，甲基。
現參考圖式，圖1繪示根據本揭露之至少一實施例之沉積製程100的示意圖式。在所繪示的製程中，如所繪示，反應物氣體(例如，He、Ar及/或H2 )係於整個沉積循環中及視情況於沉積循環之前提供。各沉積循環始於饋送步驟110，其中將前驅物氣體提供至反應空間，然後再關閉。接著，在沖洗步驟120中，將前驅物氣體自反應空間清除。然後，在電漿開啟步驟130中，提供電漿(例如，RF)功率並關閉。電漿可以兩個或更多個脈衝提供，或其可於步驟130期間連續地提供。隨後，在後沖洗步驟140中，可將任何過剩的前驅物及/或副產物自反應空間清除。可重複沉積循環，直至達成期望的沉積材料厚度為止。上述製程可用來形成絕緣或低-к介電材料層。舉例來說，可使用製程100形成氧化物、氮化物、及碳化物層中之一或多者。舉例來說，上述之層可為或可包括SiO2 、SiN、SiOC、SiCN、SiC、SiON、SiOCN、SiBN、SiBO、GeOx 、GeN、AlOx 、TiO2 、及TaO2 中之一或多者。
圖2繪示於根據本揭露之一例示性實施例之沉積循環期間的反應。在所繪示之實例中，將前驅物，例如，對稱結構化前驅物，諸如二甲基二甲氧矽烷(DMDMOS)前驅物，饋送至反應腔室中。在其他實施例中，使用不同的對稱結構化前驅物。在一些實施例中，使用含氧的對稱結構化前驅物。在一些實施例中，對稱結構化前驅物包含較跨越對稱的水平平面之鍵更容易斷裂之沿對稱的水平平面的鍵。在一些實施例中，前驅物跨越對稱的垂直平面亦係對稱的。其他可使用之對稱結構化前驅物的實例包括四甲基-1,3-二甲氧二矽氧烷(DMOTMDS)、四乙基-1,3-二甲氧二矽氧烷、四丙基-1,3-二甲氧二矽氧烷、四丁基-1,3-二甲氧二矽氧烷、四甲基-1,3-二乙氧二矽氧烷、四甲基-1,3-二丙氧二矽氧烷、四乙基-1,3-二乙氧二矽氧烷、四乙基-1,3-二丙氧二矽氧烷、四丙基-1,3-二乙氧二矽氧烷、四丙基-1,3-二丙氧二矽氧烷、四丁基-1,3-二乙氧二矽氧烷、四丁基-1,3-二丙氧二矽氧烷、及其類似物。在其他實施例中，使用非對稱結構化前驅物。
在此實例中，於將DMDMOS前驅物饋送至反應腔室後，沖洗步驟將未黏附或吸附至基材上的任何過剩前驅物排空。於沖洗後，當打開電漿時，Ar離子自DMDMOS物種裂解甲基端基。然後，後沖洗步驟自反應腔室排空甲基副產物。如所繪示，於DMDMOS末端的自由氧基可結合產生膜。
在一些實施例中，電漿步驟係以脈衝提供。脈衝式電漿可增強對來自反應腔室的任何殘留的前驅物及/或任何副產物的沖洗，及防止其被納入至膜中。在其中使用脈衝式電漿的一些實施例中，可提供RF功率之各脈衝持續低於0.1秒、低於0.05秒、或低於0.04秒。在一些實施例中，RF功率的持續時間為0.04、0.05、0.1、0.2、0.3、0.4、0.5、0.6、0.7、0.8、0.9、1.0、2.0、3.0、4.0、或5.0秒，及在上述數字的任何兩者間的範圍。脈衝循環中之關閉時間的持續時間可取決於其他製程條件，諸如流率、壓力等等。根據本揭露之特定實例，關閉時間的持續期間較前驅物於反應腔室內之滯留時間的持續時間長。在一些實施例中，調整電漿條件以不破壞前驅物中的原始對稱結構。
在一些實施例中，使用遠端電漿。在一些實施例中，使用直接電漿。
在一些實施例中，於如圖2所繪示之步驟110、120、130及140中之一或多者期間於反應腔室內的溫度係介於約50與70 °C之間或介於約30與50 °C之間。在一些實施例中，於如圖2所繪示之步驟110、120、130、及140中之一或多者期間於反應腔室內的壓力係介於約500與約1000 Pa或約1000與約5000 Pa之間。
在一些實施例中，在PEALD製程期間，用來形成電漿之RF產生器的功率可係介於約20W與約200W、約40W與約150W、或約20W與約50W之間。在一些實施例中，未施加偏壓。在其他實施例中，可施加低偏壓。舉例來說，介於噴淋頭與基座之間的偏壓可係介於約2W與約50W、約5W與約30W、或約2W與約15W之間。
在一些實施例中，使用PEALD製程。在其他實施例中，可使用其他循環沉積製程，諸如混合ALD-CVD製程之PECVD。在循環沉積製程中，可重複循環以形成期望厚度之層。舉例來說，可形成具有2 nm至約300 nm或約10 nm至約150 nm之厚度之層。
在一些實施例中，利用連續或脈衝式電漿，前驅物至反應腔室之流動速率(sccm)係15、80、160或前述數字之任兩者之範圍。
使用於本揭露之方法中之反應器可包括任何適當的氣相反應器。例示性的反應器包括ALD(例如，PEALD)反應器及CVD(例如，PECVD)反應器。圖6係適用於本揭露之例示性實施例之例示性PEALD設備300之示意圖。PEALD設備300包括在反應腔室3之內部11(反應區)中平行且彼此面對的一對導電平板電極4、2。當向一側施加RF功率(13.56 MHz或27 MHz)20，且於另一側12將電源電接地時，於電極之間激發電漿。可在下台(lower stage) 2(下部電極)中提供溫度調節器，且可將放置在其上之基材1的溫度保持在期望溫度。上部電極4亦充當噴淋板，且反應物氣體及/或稀釋氣體(若使用)以及前驅物氣體係分別通過氣體管線21及氣體管線22以及通過噴淋板4引入至反應腔室3中。此外，在反應腔室3中，提供具有排氣管線7之圓管13，通過其排出反應腔室3之內部11中的氣體。此外，設置在反應腔室3下方之傳送室5具備密封氣體管線24，以經由傳送室5的內部16(傳送區)將密封氣體引入至反應腔室3的內部11中，其中提供用於分開反應區與傳送區之分隔板14(此圖式省略閘閥，晶圓係通過該閘閥傳送至傳送室5中或從該傳送室5傳送)。傳送室亦具備排氣管線6。在一些實施例中，反應器係與經程式化來實施文中所述之PEALD製程的控制器400結合。
藉由本揭露之方法形成之結構200繪示於圖7。結構200可包括如文中所述之基材210。結構可包括上覆基材之一或多個層220，其係如文中所述來形成。
實例
以下提供之實例意欲為說明性。除非另外指示，否則本揭露之實施例不受限於以下提供的具體實例。
實例1
根據圖1及2中繪示之製程藉由PEALD於基材上形成低-k膜。使用連續電漿步驟進行循環。圖3繪示本揭露之方法產生類似ALD的膜生長。圖3A係顯示每循環之生長(GPC)(nm/循環)與前驅物饋送時間(秒)之間之關係圖，其指示於1秒的饋送時間後生長達到飽和點。圖3B顯示GPC與RF開啟時間(秒)之間的關係，其指示於大約0.6秒的電漿開啟時間後生長達到飽和點。圖3C顯示GPC與沖洗時間(秒)之間的關係，其指示於約2秒時沖洗實質上完成。於約2秒後，GPC主要係歸因於表面反應。圖3D顯示膜厚度(nm)與於沉積製程中重複之循環數之間的關係。圖3D指示層厚度與沉積循環數成比例地增加。兩者之間的關係實質上為線性，指示類似ALD的膜生長。
實例2
圖4A及4B繪示根據本揭露之實施例在不同製程條件下形成之Si-CH3 膜的傅立葉轉換紅外(FTIR)光譜。在1000 Pa壓力、200 W功率、及2秒之製程條件下，k值係約4。在1000 Pa壓力、200 W功率、及0.3秒下，k值係約4。在3000 Pa壓力、100 W功率、及0.15秒下，k值係3.1。在此等條件下之經改良的k值係較諸呈現3.23之k值之習知PECVD方法(參考)的進一步改良。當電漿離子能量減小時，Si-CH3 峰增加。此係經由提高壓力、減小功率、及減小電漿開啟時間，保持前驅物中之原始Si-CH3 結構來達成。
圖5繪示在於圖4中確定之最佳條件(明確言之3000 Pa壓力、100 W功率、及0.15秒)下使用脈衝式電漿相對連續電漿形成之 Si-CH3 膜的FTIR光譜。於脈衝放電期間沉積的膜具有較連續放電高的 Si-CH3 峰，據認為其係由減少或減輕副產物之納入膜中所產生。
上文所述之本揭露之實例實施例並未限制本揭露的範疇，因為這些實施例僅為本揭露之實施例之實例。任何等效實施例皆旨在本揭露之範疇內。實際上，除本文所示及所述之實施例以外，在所屬技術領域中具有通常知識者當可從本說明書明白本揭露之各種修改(諸如，所述元件之替代可用組合)。此類修改及實施例亦意欲落在隨附之申請專利範圍的範疇內。
1, 210:基材 2, 4:電極 3:反應腔室 5:傳送室 6, 7:排氣管線 11:反應腔室之內部 12:電接地之一側 13:圓管 14:分隔板 16:傳送室的內部 20:RF功率 21, 22:氣體管線 24:密封氣體管線 200:結構 220:層 300:PEALD設備 400:控制器
當結合下列說明圖式考慮時，可藉由參照實施方式及申請專利範圍而得到對本發明之例示性實施例的更完整了解。 圖1繪示根據本揭露之一實施例之PEALD製程序列。 圖2繪示於根據本揭露之一實施例之PEALD製程之一個循環期間發生的反應。 圖3 (A)-(D)係繪示根據本揭露之一實施例之每循環之低-к膜生長(GPC)(nm/循環)與(A)饋送時間(秒)，(B)RF開啟時間(秒)，及(C)沖洗時間(秒)之間之關係的圖。(D)繪示根據本揭露之一實施例於膜厚度(nm)與循環數之間的關係。 圖4A及圖4B繪示根據本揭露之實施例在不同製程條件下形成之Si-CH3 膜的傅立葉轉換紅外(FTIR)光譜。圖4A之分解圖插圖提供於圖4B中。 圖5繪示根據本揭露之實施例使用脈衝式電漿步驟及連續電漿步驟之Si-CH3 膜的FTIR光譜。 圖6繪示用於沉積可根據本揭露之實施例使用之介電膜之PEALD(電漿增強型原子層沉積)設備的示意圖。 圖7繪示根據本揭露之實施例形成之結構的示意圖。 將理解到的是，圖式中之元件係為了簡單及清楚起見而繪示且不一定按比例繪製。例如，圖式中的一些元件之尺寸可相對於其他元件誇大，以幫助提升對本揭露所繪示之實施例的瞭解。
100:製程
110,120,130,140:步驟

Claims (22)

  1. 一種在一基材之一表面上沉積一材料之方法，該方法包含下列步驟： (a)在一反應腔室內提供該基材； (b)於該反應腔室內提供一對稱結構化前驅物，其中該對稱結構化前驅物吸附於該基材之該表面上而形成一經吸附物種； (c)於提供該對稱結構化前驅物之後沖洗該反應腔室；及 (d)使該經吸附物種暴露至一活性物種以裂解該經吸附物種及藉此於該基材之該表面上形成一經裂解經吸附物種。
  2. 如請求項1所述之方法，其中該對稱結構化前驅物係跨越水平軸對稱的。
  3. 如請求項1所述之方法，其中該對稱結構化前驅物包含氧。
  4. 如請求項1所述之方法，其中該對稱結構化包含以下中之一或多者：二甲基二甲氧矽烷(DMDMOS)、四甲基-1,3-二甲氧二矽氧烷(DMOTMDS)、四乙基-1,3-二甲氧二矽氧烷、四丙基-1,3-二甲氧二矽氧烷、四丁基-1,3-二甲氧二矽氧烷、四甲基-1,3-二乙氧二矽氧烷、四甲基-1,3-二丙氧二矽氧烷、四乙基-1,3-二乙氧二矽氧烷、四乙基-1,3-二丙氧二矽氧烷、四丙基-1,3-二乙氧二矽氧烷、四丙基-1,3-二丙氧二矽氧烷、四丁基-1,3-二乙氧二矽氧烷、或四丁基-1,3-二丙氧二矽氧烷。
  5. 如請求項1所述之方法，其中該活性物種係於該反應腔室內形成。
  6. 如請求項1所述之方法，其中該活性物種係使用一遠端電漿形成。
  7. 如請求項1所述之方法，其中用來形成該活性物種之氣體包含氬、氦、或氬及氦兩者。
  8. 如請求項1所述之方法，其中用來形成該活性物種之氣體包含氫氣。
  9. 如請求項1所述之方法，其中，在步驟(d)期間，脈衝一電漿。
  10. 如請求項1所述之方法，其中，在步驟(d)期間，連續供應一電漿。
  11. 如請求項1所述之方法，其中該方法包括一PEALD製程。
  12. 如請求項1所述之方法，其進一步包括於步驟(d)之後沖洗該反應腔室之一步驟。
  13. 如請求項1所述之方法，其中一反應物氣體於步驟(a)至(d)期間連續地饋送至該反應腔室。
  14. 如請求項1所述之方法，其中該前驅物包含Si-O鍵。
  15. 如請求項1所述之方法，其中該前驅物包含矽及一有機基團。
  16. 如請求項15所述之方法，其中於步驟(d)中自該經吸附物種裂解出一有機基團。
  17. 如請求項1所述之方法，其中該反應腔室內之一壓力係介於約500 Pa與約1000 Pa、或約1000 Pa與約5000 Pa之間。
  18. 如請求項1所述之方法，其中該反應腔室內之一溫度係介於約70 °C與約50 °C、或約50 °C與約30 °C之間。
  19. 一種於一基材上形成一低-к介電膜之方法，其係經由執行如請求項1至17中任一項所述之方法，及重複步驟(a)至(d)直至達成期望膜厚度為止。
  20. 一種結構，其係根據請求項1至18中任一項所述之方法來形成。
  21. 一種反應器系統，其係用來執行如請求項1至18中任一項所述之步驟。
  22. 一種在一基材之一表面上沉積一材料之方法，該方法包含下列步驟： (a)在一反應腔室內提供該基材； (b)於該反應腔室內提供一前驅物，其中該前驅物吸附於該基材之該表面上而形成一經吸附物種； (c)於提供該前驅物之後沖洗該反應腔室；及 (d)使該經吸附物種暴露至一活性物種以裂解該經吸附物種及藉此形成一包含該材料之層。
TW109128204A 2019-08-29 2020-08-19 包括介電層之結構、其形成方法及執行形成方法的反應器系統 TWI895278B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962893645P 2019-08-29 2019-08-29
US62/893,645 2019-08-29

Publications (2)

Publication Number Publication Date
TW202111148A true TW202111148A (zh) 2021-03-16
TWI895278B TWI895278B (zh) 2025-09-01

Family

ID=74680062

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109128204A TWI895278B (zh) 2019-08-29 2020-08-19 包括介電層之結構、其形成方法及執行形成方法的反應器系統

Country Status (3)

Country Link
US (1) US20210066075A1 (zh)
KR (1) KR20210028093A (zh)
TW (1) TWI895278B (zh)

Families Citing this family (261)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR102762543B1 (ko) 2016-12-14 2025-02-05 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
TWI815813B (zh) 2017-08-04 2023-09-21 荷蘭商Ａｓｍ智慧財產控股公司 用於分配反應腔內氣體的噴頭總成
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
TWI791689B (zh) 2017-11-27 2023-02-11 荷蘭商Ａｓｍ智慧財產控股私人有限公司 包括潔淨迷你環境之裝置
JP7214724B2 (ja) 2017-11-27 2023-01-30 エーエスエム アイピー ホールディング ビー．ブイ． バッチ炉で利用されるウェハカセットを収納するための収納装置
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
KR102695659B1 (ko) 2018-01-19 2024-08-14 에이에스엠 아이피 홀딩 비.브이. 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102600229B1 (ko) 2018-04-09 2023-11-10 에이에스엠 아이피 홀딩 비.브이. 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
TWI843623B (zh) 2018-05-08 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
US12272527B2 (en) 2018-05-09 2025-04-08 Asm Ip Holding B.V. Apparatus for use with hydrogen radicals and method of using same
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
TWI871083B (zh) 2018-06-27 2025-01-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料之循環沉積製程
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
CN110970344B (zh) 2018-10-01 2024-10-25 Asmip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
US12378665B2 (en) 2018-10-26 2025-08-05 Asm Ip Holding B.V. High temperature coatings for a preclean and etch apparatus and related methods
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR102748291B1 (ko) 2018-11-02 2024-12-31 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI866480B (zh) 2019-01-17 2024-12-11 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR102727227B1 (ko) 2019-01-22 2024-11-07 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
TWI873122B (zh) 2019-02-20 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR102762833B1 (ko) 2019-03-08 2025-02-04 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR102858005B1 (ko) 2019-03-08 2025-09-09 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR102809999B1 (ko) 2019-04-01 2025-05-19 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR102897355B1 (ko) 2019-04-19 2025-12-08 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR102869364B1 (ko) 2019-05-07 2025-10-10 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR102929471B1 (ko) 2019-05-07 2026-02-20 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR102929472B1 (ko) 2019-05-10 2026-02-20 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP7612342B2 (ja) 2019-05-16 2025-01-14 エーエスエム・アイピー・ホールディング・ベー・フェー ウェハボートハンドリング装置、縦型バッチ炉および方法
JP7598201B2 (ja) 2019-05-16 2024-12-11 エーエスエム・アイピー・ホールディング・ベー・フェー ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
KR20200141002A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
KR102918757B1 (ko) 2019-06-10 2026-01-28 에이에스엠 아이피 홀딩 비.브이. 석영 에피택셜 챔버를 세정하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
KR102911421B1 (ko) 2019-07-03 2026-01-12 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646B (zh) 2019-07-10 2026-02-10 Asmip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR102895115B1 (ko) 2019-07-16 2025-12-03 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102860110B1 (ko) 2019-07-17 2025-09-16 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
TWI826704B (zh) 2019-07-17 2023-12-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 自由基輔助引燃電漿系統和方法
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
KR102903090B1 (ko) 2019-07-19 2025-12-19 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
CN112309843B (zh) 2019-07-29 2026-01-23 Asmip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309900B (zh) 2019-07-30 2025-11-04 Asmip私人控股有限公司 基板处理设备
KR20210015655A (ko) 2019-07-30 2021-02-10 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 방법
CN112309899B (zh) 2019-07-30 2025-11-14 Asmip私人控股有限公司 基板处理设备
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (ko) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 화학물질 공급원 용기를 위한 액체 레벨 센서
KR20210018761A (ko) 2019-08-09 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 냉각 장치를 포함한 히터 어셈블리 및 이를 사용하는 방법
KR20210021266A (ko) 2019-08-14 2021-02-25 에이에스엠 아이피 홀딩 비.브이. 웨이퍼를 처리하는 장치 및 방법
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP7810514B2 (ja) 2019-08-21 2026-02-03 エーエスエム・アイピー・ホールディング・ベー・フェー 成膜原料混合ガス生成装置及び成膜装置
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR102928101B1 (ko) 2019-08-23 2026-02-13 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR102868968B1 (ko) 2019-09-03 2025-10-10 에이에스엠 아이피 홀딩 비.브이. 칼코지나이드 막 및 상기 막을 포함한 구조체를 증착하기 위한 방법 및 장치
KR102806450B1 (ko) 2019-09-04 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR102733104B1 (ko) 2019-09-05 2024-11-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US12469693B2 (en) 2019-09-17 2025-11-11 Asm Ip Holding B.V. Method of forming a carbon-containing layer and structure including the layer
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
TW202128273A (zh) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體注入系統、及將材料沉積於反應室內之基板表面上的方法
KR102948143B1 (ko) 2019-10-08 2026-04-07 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
TWI846966B (zh) 2019-10-10 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成光阻底層之方法及包括光阻底層之結構
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR102845724B1 (ko) 2019-10-21 2025-08-13 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
US11996292B2 (en) 2019-10-25 2024-05-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR102890638B1 (ko) 2019-11-05 2025-11-25 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR102861314B1 (ko) 2019-11-20 2025-09-17 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112951697B (zh) 2019-11-26 2025-07-29 Asmip私人控股有限公司 基板处理设备
CN112885692B (zh) 2019-11-29 2025-08-15 Asmip私人控股有限公司 基板处理设备
CN120432376A (zh) 2019-11-29 2025-08-05 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
KR102943768B1 (ko) 2019-12-19 2026-03-26 에이에스엠 아이피 홀딩 비.브이. 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
TWI887322B (zh) 2020-01-06 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 反應器系統、抬升銷、及處理方法
JP7730637B2 (ja) 2020-01-06 2025-08-28 エーエスエム・アイピー・ホールディング・ベー・フェー ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102882467B1 (ko) 2020-01-16 2025-11-05 에이에스엠 아이피 홀딩 비.브이. 고 종횡비 피처를 형성하는 방법
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TWI889744B (zh) 2020-01-29 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 污染物捕集系統、及擋板堆疊
TW202513845A (zh) 2020-02-03 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體裝置結構及其形成方法
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
KR102916725B1 (ko) 2020-02-13 2026-01-23 에이에스엠 아이피 홀딩 비.브이. 수광 장치를 포함하는 기판 처리 장치 및 수광 장치의 교정 방법
KR20210103953A (ko) 2020-02-13 2021-08-24 에이에스엠 아이피 홀딩 비.브이. 가스 분배 어셈블리 및 이를 사용하는 방법
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TWI895326B (zh) 2020-02-28 2025-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 專用於零件清潔的系統
KR102943116B1 (ko) 2020-03-04 2026-03-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 정렬 고정구
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR102775390B1 (ko) 2020-03-12 2025-02-28 에이에스엠 아이피 홀딩 비.브이. 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
US12173404B2 (en) 2020-03-17 2024-12-24 Asm Ip Holding B.V. Method of depositing epitaxial material, structure formed using the method, and system for performing the method
KR102755229B1 (ko) 2020-04-02 2025-01-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TWI887376B (zh) 2020-04-03 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體裝置的製造方法
TWI888525B (zh) 2020-04-08 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
KR20210127620A (ko) 2020-04-13 2021-10-22 에이에스엠 아이피 홀딩 비.브이. 질소 함유 탄소 막을 형성하는 방법 및 이를 수행하기 위한 시스템
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR102901748B1 (ko) 2020-04-21 2025-12-17 에이에스엠 아이피 홀딩 비.브이. 기판을 처리하기 위한 방법
TW202539998A (zh) 2020-04-24 2025-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 包含釩化合物之組成物與容器及用於穩定釩化合物之方法及系統
KR102866804B1 (ko) 2020-04-24 2025-09-30 에이에스엠 아이피 홀딩 비.브이. 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
CN113555279A (zh) 2020-04-24 2021-10-26 Asm Ip私人控股有限公司 形成含氮化钒的层的方法及包含其的结构
KR102934380B1 (ko) 2020-04-24 2026-03-05 에이에스엠 아이피 홀딩 비.브이. 바나듐 보라이드 및 바나듐 포스파이드 층을 포함한 구조체를 형성하는 방법
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
KR102783898B1 (ko) 2020-04-29 2025-03-18 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
JP7726664B2 (ja) 2020-05-04 2025-08-20 エーエスエム・アイピー・ホールディング・ベー・フェー 基板を処理するための基板処理システム
KR20210137395A (ko) 2020-05-07 2021-11-17 에이에스엠 아이피 홀딩 비.브이. 불소계 라디칼을 이용하여 반응 챔버의 인시츄 식각을 수행하기 위한 장치 및 방법
JP7736446B2 (ja) 2020-05-07 2025-09-09 エーエスエム・アイピー・ホールディング・ベー・フェー 同調回路を備える反応器システム
KR102788543B1 (ko) 2020-05-13 2025-03-27 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
KR102936676B1 (ko) 2020-05-15 2026-03-10 에이에스엠 아이피 홀딩 비.브이. 다중 전구체를 사용하여 실리콘 게르마늄 균일도를 제어하기 위한 방법
KR102905441B1 (ko) 2020-05-19 2025-12-30 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102795476B1 (ko) 2020-05-21 2025-04-11 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR20210145079A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 기판을 처리하기 위한 플랜지 및 장치
TWI873343B (zh) 2020-05-22 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基材上形成薄膜之反應系統
KR20210146802A (ko) 2020-05-26 2021-12-06 에이에스엠 아이피 홀딩 비.브이. 붕소 및 갈륨을 함유한 실리콘 게르마늄 층을 증착하는 방법
TWI876048B (zh) 2020-05-29 2025-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
KR20210156219A (ko) 2020-06-16 2021-12-24 에이에스엠 아이피 홀딩 비.브이. 붕소를 함유한 실리콘 게르마늄 층을 증착하는 방법
TWI908816B (zh) 2020-06-24 2025-12-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TWI873359B (zh) 2020-06-30 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
US12431354B2 (en) 2020-07-01 2025-09-30 Asm Ip Holding B.V. Silicon nitride and silicon oxide deposition methods using fluorine inhibitor
KR102707957B1 (ko) 2020-07-08 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR20220010438A (ko) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. 포토리소그래피에 사용하기 위한 구조체 및 방법
TWI878570B (zh) 2020-07-20 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
KR20220011092A (ko) 2020-07-20 2022-01-27 에이에스엠 아이피 홀딩 비.브이. 전이 금속층을 포함하는 구조체를 형성하기 위한 방법 및 시스템
TW202219303A (zh) 2020-07-27 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 薄膜沉積製程
KR20220020210A (ko) 2020-08-11 2022-02-18 에이에스엠 아이피 홀딩 비.브이. 기판 상에 티타늄 알루미늄 카바이드 막 구조체 및 관련 반도체 구조체를 증착하는 방법
KR102915124B1 (ko) 2020-08-14 2026-01-19 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
TWI911263B (zh) 2020-08-25 2026-01-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 清潔基板的方法、選擇性沉積的方法、及反應器系統
TW202534193A (zh) 2020-08-26 2025-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成金屬氧化矽層及金屬氮氧化矽層的方法
TWI911265B (zh) 2020-08-27 2026-01-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、及裝置結構
TWI904232B (zh) 2020-09-10 2025-11-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積間隙填充流體之方法及相關系統和裝置
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
KR20220036866A (ko) 2020-09-16 2022-03-23 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물 증착 방법
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TWI889903B (zh) 2020-09-25 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
TW202229612A (zh) 2020-10-06 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 在部件的側壁上形成氮化矽的方法及系統
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
KR102855834B1 (ko) 2020-10-14 2025-09-04 에이에스엠 아이피 홀딩 비.브이. 단차형 구조 상에 재료를 증착하는 방법
KR102873665B1 (ko) 2020-10-15 2025-10-17 에이에스엠 아이피 홀딩 비.브이. 반도체 소자의 제조 방법, 및 ether-cat을 사용하는 기판 처리 장치
TW202217037A (zh) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積釩金屬的方法、結構、裝置及沉積總成
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202229620A (zh) 2020-11-12 2022-08-01 特文特大學 沉積系統、用於控制反應條件之方法、沉積方法
TW202229795A (zh) 2020-11-23 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具注入器之基板處理設備
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 注入器、及基板處理設備
KR20220077875A (ko) 2020-12-02 2022-06-09 에이에스엠 아이피 홀딩 비.브이. 샤워헤드 어셈블리용 세정 고정구
US12255053B2 (en) 2020-12-10 2025-03-18 Asm Ip Holding B.V. Methods and systems for depositing a layer
US12159788B2 (en) 2020-12-14 2024-12-03 Asm Ip Holding B.V. Method of forming structures for threshold voltage control
CN114639631A (zh) 2020-12-16 2022-06-17 Asm Ip私人控股有限公司 跳动和摆动测量固定装置
TW202232639A (zh) 2020-12-18 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具有可旋轉台的晶圓處理設備
TW202226899A (zh) 2020-12-22 2022-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具匹配器的電漿處理裝置
KR20220090435A (ko) 2020-12-22 2022-06-29 에이에스엠 아이피 홀딩 비.브이. 전구체 캡슐, 용기 및 방법
KR20220090438A (ko) 2020-12-22 2022-06-29 에이에스엠 아이피 홀딩 비.브이. 전이금속 증착 방법
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
USD1099184S1 (en) 2021-11-29 2025-10-21 Asm Ip Holding B.V. Weighted lift pin
USD1060598S1 (en) 2021-12-03 2025-02-04 Asm Ip Holding B.V. Split showerhead cover
TW202332793A (zh) * 2022-01-07 2023-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成碳氧化矽層之方法及系統及使用其形成之結構

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6677253B2 (en) * 2001-10-05 2004-01-13 Intel Corporation Carbon doped oxide deposition
US6825134B2 (en) * 2002-03-26 2004-11-30 Applied Materials, Inc. Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow
US7335980B2 (en) * 2004-11-04 2008-02-26 International Business Machines Corporation Hardmask for reliability of silicon based dielectrics
US7902080B2 (en) * 2006-05-30 2011-03-08 Applied Materials, Inc. Deposition-plasma cure cycle process to enhance film quality of silicon dioxide
US8236684B2 (en) * 2008-06-27 2012-08-07 Applied Materials, Inc. Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer
US9997357B2 (en) * 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9611544B2 (en) * 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9076646B2 (en) * 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US10804094B2 (en) * 2016-05-06 2020-10-13 Applied Materials, Inc. Methods of depositing SiCON with C, O and N compositional control
US9328416B2 (en) * 2014-01-17 2016-05-03 Lam Research Corporation Method for the reduction of defectivity in vapor deposited films
US20160049293A1 (en) * 2014-08-14 2016-02-18 Air Products And Chemicals, Inc. Method and composition for providing pore sealing layer on porous low dielectric constant films
US9478414B2 (en) * 2014-09-26 2016-10-25 Asm Ip Holding B.V. Method for hydrophobization of surface of silicon-containing film by ALD
US10041167B2 (en) * 2015-02-23 2018-08-07 Applied Materials, Inc. Cyclic sequential processes for forming high quality thin films
TWI701357B (zh) * 2015-03-17 2020-08-11 美商應用材料股份有限公司 用於膜沉積的脈衝化電漿
US9786492B2 (en) * 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
KR102378021B1 (ko) * 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
US11749563B2 (en) * 2018-06-27 2023-09-05 Taiwan Semiconductor Manufacturing Co., Ltd. Interlayer dielectric layer

Also Published As

Publication number Publication date
TWI895278B (zh) 2025-09-01
US20210066075A1 (en) 2021-03-04
KR20210028093A (ko) 2021-03-11

Similar Documents

Publication Publication Date Title
TW202111148A (zh) 包括介電層之結構、其形成方法及執行形成方法的反應器系統
TWI804706B (zh) 氧化矽之拓撲選擇性膜形成之方法
TWI817004B (zh) 用於重組非晶碳聚合物膜之方法
TWI788311B (zh) 拓撲受限電漿增強循環沉積方法
JP6929279B2 (ja) ＳｉＯおよびＳｉＮを含む流動性膜を堆積させる方法
TWI479044B (zh) 硼膜界面工程
CN101690420B (zh) 氮化硼和氮化硼导出材料的沉积方法
US7601651B2 (en) Method to improve the step coverage and pattern loading for dielectric films
TWI523103B (zh) 在高開口率圖案上形成具有Ｓｉ－Ｎ鍵之共形膜的方法
CN113140503A (zh) 形成高纵横比特征的方法
US9613908B2 (en) Ultra-thin dielectric diffusion barrier and etch stop layer for advanced interconnect applications
CN113195786A (zh) 用于间隙填充的远程氢等离子体暴露以及掺杂或未掺杂硅碳化物沉积
CN109166787B (zh) 一种氧化硅薄膜的可流动化学气相沉积方法
CN107104036A (zh) 用于在沟槽侧壁或平整表面上选择性形成氮化硅膜的方法
KR20150079470A (ko) 펄싱된 플라즈마 노출을 사용하여 플라즈마 강화된 원자층 증착
CN103975419A (zh) 等离子体活化保形电介质膜沉积
TW201007832A (en) Method for critical dimension shrink using conformal PECVD films
US20250201628A1 (en) Methods for depositing gap filling fluids and related systems and devices
US12559837B2 (en) Method for depositing boron nitride
US10964587B2 (en) Atomic layer deposition for low-K trench protection during etch
US20230411147A1 (en) Methods and systems for forming a layer comprising silicon oxide
CN121336526A (zh) 用于硬模应用的含硅与金属材料的形成
JP2004186210A (ja) 窒素含有ケイ素化合物膜の形成方法