TW202123781A - Plasma processing equipment and plasma processing method achieving the purpose of increasing a self-bias voltage in the plasma processing equipment - Google Patents

Plasma processing equipment and plasma processing method achieving the purpose of increasing a self-bias voltage in the plasma processing equipment Download PDF

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TW202123781A
TW202123781A TW109140827A TW109140827A TW202123781A TW 202123781 A TW202123781 A TW 202123781A TW 109140827 A TW109140827 A TW 109140827A TW 109140827 A TW109140827 A TW 109140827A TW 202123781 A TW202123781 A TW 202123781A
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signal
electrode structure
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TWI811587B (en
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黃振華
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大陸商中微半導體設備（上海）股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
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Abstract

An embodiment of the present invention discloses plasma processing equipment and a plasma processing method. The plasma processing equipment includes: a first electrode structure and a second electrode structure disposed oppositely, a signal processor electrically connected to the first electrode structure and a signal generator electrically connected to the signal processor. The signal generator is used for generating a first signal, and the signal processor is used for processing the first signal for feeding between the first electrode structure and the second electrode structure, so as to generate plasma. The signal processor includes a first signal processor, which is used for converting the first signal into a second signal. The second signal corresponds to a function that is a function of the n-th power of a first function with an opposite sign, wherein the first function is a periodic sine function or a periodic cosine function, where n is an even number greater than zero, so that the function value of the second signal fed between the first electrode structure and the second electrode structure is always negative, thereby forming a relatively high self-bias voltage on a surface of a substrate to be processed, which achieves the purpose of increasing the self-bias voltage in the plasma processing equipment.

Description

等離子體處理設備以及等離子體處理方法Plasma processing equipment and plasma processing method

本發明涉及等離子體的技術領域，尤其涉及一種等離子體處理設備以及等離子體處理方法。The present invention relates to the technical field of plasma, in particular to a plasma processing equipment and a plasma processing method.

等離子體已被用於製造半導體和顯示器件的各種製程，例如沉積、蝕刻、 剝落、清潔等製程。目前，作為通常用於半導體和顯示器件的製造領域的等離子體源包括電容耦合等離子體(capacitively coupled plasma，簡稱CCP)源和電感耦合等離子體(inductively coupled plasma，簡稱ICP)源。Plasma has been used in various processes for manufacturing semiconductors and display devices, such as deposition, etching, peeling, and cleaning processes. At present, plasma sources commonly used in the manufacturing field of semiconductors and display devices include a capacitively coupled plasma (CCP) source and an inductively coupled plasma (ICP) source.

典型的CCP設備在平行的電極之間施加射頻(RF)電能，並且通過分佈在電極表面上的電荷形成電場，由此產生等離子體，進行蝕刻等製程。需要說明的是，提高等離子體的能量在利用CCP設備進行高深寬比的蝕刻製程中至關重要，而提高CCP設備中的自偏壓是提高等離子體能量的主要途徑。因此，如何提高等離子體處理設備中的自偏壓成為所屬技術領域中具有通常知識者急待解決的技術問題。A typical CCP device applies radio frequency (RF) power between parallel electrodes, and forms an electric field through the electric charges distributed on the surface of the electrodes, thereby generating plasma, and performing processes such as etching. It should be noted that increasing the plasma energy is very important in the high aspect ratio etching process using CCP equipment, and increasing the self-bias voltage in the CCP equipment is the main way to increase the plasma energy. Therefore, how to increase the self-bias voltage in the plasma processing equipment has become an urgent technical problem to be solved by those with ordinary knowledge in the technical field.

為解決上述技術問題，本發明實施例提供了一種等離子體處理設備以及等離子體處理方法，以提高所述等離子體處理設備中的自偏壓。In order to solve the above technical problems, embodiments of the present invention provide a plasma processing device and a plasma processing method to increase the self-bias voltage in the plasma processing device.

為解決上述問題，本發明實施例提供了如下技術方案： 一種等離子體處理設備，包括： 等離子體處理腔室； 位於所述等離子體處理腔室內，相對設置的第一電極結構和第二電極結構； 與所述第一電極結構電連接的訊號處理器以及與所述訊號處理器電連接的訊號發生器，所述訊號發生器用於產生第一訊號，所述訊號處理器用於對所述第一訊號進行處理後，饋入到所述第一電極結構和所述第二電極結構之間，以產生等離子體； 其中，所述訊號處理器包括第一訊號處理器，用於將所述第一訊號轉換成第二訊號，其中，所述第二訊號對應的函數為負的第一函數的n次方異號的函數，所述第一函數為週期性正弦函數或週期性餘弦函數，其中，n為大於零的偶數。In order to solve the foregoing problems, the embodiments of the present invention provide the following technical solutions: A plasma processing equipment, including: Plasma processing chamber; A first electrode structure and a second electrode structure located opposite to each other in the plasma processing chamber; A signal processor electrically connected to the first electrode structure and a signal generator electrically connected to the signal processor, the signal generator is used to generate a first signal, and the signal processor is used to respond to the first signal After processing, it is fed between the first electrode structure and the second electrode structure to generate plasma; Wherein, the signal processor includes a first signal processor for converting the first signal into a second signal, wherein the function corresponding to the second signal is a negative sign of the nth power of the first function The first function is a periodic sine function or a periodic cosine function, where n is an even number greater than zero.

較佳的，所述第一訊號為第一函數。Preferably, the first signal is a first function.

較佳的，所述第一訊號的波形為sinwt波形，所述第二訊號的波形為-sin2 wt波形。Preferably, the waveform of the first signal is a sinwt waveform, and the waveform of the second signal is a -sin 2 wt waveform.

較佳的，所述第一訊號處理器包括： 類比訊號乘法器，用於將所述第一訊號轉換成第三訊號，所述第三訊號對應的函數為第一函數的n次方的函數；以及 反相器，用於將所述第三訊號轉換成第二訊號。Preferably, the first signal processor includes: An analog signal multiplier for converting the first signal into a third signal, and the function corresponding to the third signal is a function of the nth power of the first function; and An inverter is used to convert the third signal into a second signal.

較佳的，所述訊號處理器還包括： 第二訊號處理器，所述第二訊號處理器用於將所述第二訊號放大後，饋入到所述第一電極結構和所述第二電極結構之間。Preferably, the signal processor further includes: The second signal processor is used to amplify the second signal and feed it between the first electrode structure and the second electrode structure.

較佳的，所述第二訊號處理器包括： 功率放大器，用於對所述第二訊號進行放大；以及 匹配器，用於匹配第一阻抗和第二阻抗，其中，所述第一阻抗為所述訊號發生器中的阻抗，所述第二阻抗為所述訊號發生器至所述第二電極結構所在支路上的所有阻抗之和。Preferably, the second signal processor includes: A power amplifier for amplifying the second signal; and A matching device for matching a first impedance and a second impedance, wherein the first impedance is the impedance in the signal generator, and the second impedance is the location from the signal generator to the second electrode structure The sum of all impedances on the branch.

一種等離子體處理方法，其中，應用於上述的等離子體處理設備，該等離子體處理方法包括下列步驟： 將待處理襯底放置在等離子體處理腔室內的第一電極結構上； 打開所述訊號發生器和所述訊號處理器，利用所述訊號處理器將對所述訊號發生器產生的第一訊號進行處理後饋入到所述第一電極結構和所述第二電極結構之間，並向所述等離子體處理腔室內通入製程氣體，以在所述第一電極結構和所述第二電極結構之間產生等離子體，對所述待處理襯底進行處理； 其中，所述訊號處理器包括第一訊號處理器，用於將所述第一訊號轉換成第二訊號，其中，所述第二訊號對應的函數為第一函數的n次方異號的函數，所述第一函數為週期性正弦函數或週期性餘弦函數，其中，n為大於零的偶數。A plasma processing method, wherein, applied to the above plasma processing equipment, the plasma processing method includes the following steps: Placing the substrate to be processed on the first electrode structure in the plasma processing chamber; Turn on the signal generator and the signal processor, and use the signal processor to process the first signal generated by the signal generator and feed it to the first electrode structure and the second electrode structure And pass a process gas into the plasma processing chamber to generate plasma between the first electrode structure and the second electrode structure to process the substrate to be processed; Wherein, the signal processor includes a first signal processor for converting the first signal into a second signal, wherein the function corresponding to the second signal is a function of the n-th power exclusive sign of the first function , The first function is a periodic sine function or a periodic cosine function, wherein n is an even number greater than zero.

較佳的，所述第一訊號處理器包括：類比訊號乘法器和反相器；利用所述訊號處理器將對所述訊號發生器產生的第一訊號進行處理後饋入到所述第一電極結構和所述第二電極結構之間包括下列步驟： 利用所述類比訊號乘法器將所述第一訊號轉換成第三訊號輸出給所述反相器，所述第三訊號對應的函數為第一函數的n次方的函數；以及 利用所述反相器將所述第三訊號轉換成第二訊號輸出。Preferably, the first signal processor includes: an analog signal multiplier and an inverter; the first signal generated by the signal generator is processed by the signal processor and then fed to the first signal The following steps are included between the electrode structure and the second electrode structure: Utilizing the analog signal multiplier to convert the first signal into a third signal and output to the inverter, the function corresponding to the third signal is a function of the nth power of the first function; and The inverter is used to convert the third signal into a second signal and output.

較佳的，所述訊號處理器還包括：第二訊號處理器，利用所述訊號處理器將對所述訊號發生器產生的第一訊號進行處理後饋入到所述第一電極結構和所述第二電極結構之間還包括下列步驟： 利用所述第二訊號處理器將所述第二訊號放大後，饋入到所述第一電極結構和所述第二電極結構之間。Preferably, the signal processor further includes: a second signal processor, using the signal processor to process the first signal generated by the signal generator and then feed it to the first electrode structure and the The second electrode structure also includes the following steps: After the second signal is amplified by the second signal processor, it is fed between the first electrode structure and the second electrode structure.

較佳的，所述第二訊號處理器包括：功率放大器和匹配器，利用所述第二訊號處理器將所述第二訊號放大後，饋入到所述第一電極結構和所述第二電極結構之間包括下列步驟： 利用所述功率放大器對所述第二訊號進行放大後輸出給匹配器；以及 利用所述匹配器匹配第一阻抗和第二阻抗，其中所述第一阻抗為所述訊號發生器中的阻抗，所述第二阻抗為所述訊號發生器至所述第二電極結構所在支路上的所有阻抗之和。Preferably, the second signal processor includes: a power amplifier and a matching device. After the second signal is amplified by the second signal processor, it is fed to the first electrode structure and the second signal. The electrode structure includes the following steps: Amplify the second signal by using the power amplifier and then output it to a matching device; and Use the matcher to match the first impedance and the second impedance, wherein the first impedance is the impedance in the signal generator, and the second impedance is the branch from the signal generator to the second electrode structure. The sum of all impedances on the road.

與習知技術相比，上述技術方案具有以下優點： 本發明的實施例所提供的等離子體處理設備及等離子體處理方法，其包括：相對設置的第一電極結構和第二電極結構，與所述第一電極結構電連接的訊號處理器以及與所述訊號處理器電連接的訊號發生器，所述訊號發生器用於產生第一訊號，所述訊號處理器用於對所述第一訊號進行處理後饋入到所述第一電極結構和所述第二電極結構之間，以產生等離子體。其中，所述訊號處理器包括第一訊號處理器，用於將所述第一訊號轉換成第二訊號，其中，所述第二訊號對應的函數為第一函數的n次方異號的函數，所述第一函數為週期性正弦函數或週期性餘弦函數，其中，n為大於零的偶數，從而使得饋入到所述第一電極結構和所述第二電極結構之間的第二訊號的函數值始終為負值，進而使得待處理襯底表面的電位始終為負值，以此在待處理襯底表面形成一個較高的自偏壓，實現提高所述等離子體處理設備中的自偏壓的目的，更適於對待處理襯底進行高深寬比蝕刻的應用。Compared with the conventional technology, the above technical solution has the following advantages: The plasma processing equipment and plasma processing method provided by the embodiments of the present invention include: a first electrode structure and a second electrode structure disposed opposite to each other, a signal processor electrically connected to the first electrode structure, and The signal generator is electrically connected to the signal processor, the signal generator is used to generate a first signal, and the signal processor is used to process the first signal and feed it to the first electrode structure and the first signal. Between the two electrode structures to generate plasma. Wherein, the signal processor includes a first signal processor for converting the first signal into a second signal, wherein the function corresponding to the second signal is a function of the n-th power exclusive sign of the first function , The first function is a periodic sine function or a periodic cosine function, where n is an even number greater than zero, so that the second signal fed between the first electrode structure and the second electrode structure The function value of is always negative, so that the potential of the surface of the substrate to be processed is always negative, so as to form a higher self-bias voltage on the surface of the substrate to be processed, so as to improve the self-bias in the plasma processing equipment. The purpose of the bias voltage is more suitable for the application of high aspect ratio etching of the substrate to be processed.

下面將結合本發明實施例中的附圖，對本發明實施例中的技術方案進行清楚、完整地描述，顯然，所描述的實施例僅僅是本發明一部分實施例，而不是全部的實施例。基於本發明中的實施例，所屬技術領域中具有通常知識者在沒有做出進步性的改變前提下所獲得的所有其他實施例，都屬於本發明保護的範圍。The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those with ordinary knowledge in the technical field without making progressive changes fall within the protection scope of the present invention.

在下面的描述中闡述了很多具體細節以便於充分理解本發明，但是本發明還可以採用其他不同於在此描述的其它方式來實施，所屬技術領域中具有通常知識者可以在不違背本發明內涵的情況下做類似推廣，因此本發明不受下面公開的具體實施例的限制。In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here. Those with ordinary knowledge in the technical field may not violate the connotation of the present invention. In the case of similar promotion, the present invention is not limited by the specific embodiments disclosed below.

正如背景技術部分所述，如何提高等離子體處理設備的自偏壓成為所屬技術領域中具有通常知識者亟待解決的技術問題。As mentioned in the background art, how to increase the self-bias voltage of the plasma processing equipment has become an urgent technical problem to be solved by those with ordinary knowledge in the art.

發明人研究發現，可以通過增加等離子體處理設備中射頻（即Radio Frequency，簡稱RF）訊號的功率或者增加等離子體處理設備中接地面積與靜電吸盤（即electrostatic chuck，簡稱ESC）面積的比值，來提高等離子體處理設備的自偏壓。但是，對於固定的腔體的等離子體處理設備，其接地面積與ESC面積的比值已經固定。因此，只有增加RF訊號的功率才可以增加自偏壓。而RF訊號功率的增加會帶來許多其他的附加效應，比如散熱系統更加複雜，面對等離子體的各種部件受到的轟擊增強從而壽命減短等。The inventor’s research found that it is possible to increase the power of the radio frequency (RF) signal in the plasma processing equipment or increase the ratio of the grounding area to the area of the electrostatic chuck (ESC) in the plasma processing equipment. Increase the self-bias voltage of plasma processing equipment. However, for a plasma processing device with a fixed cavity, the ratio of its grounding area to the ESC area has been fixed. Therefore, the self-bias voltage can only be increased by increasing the power of the RF signal. The increase in RF signal power will bring about many other additional effects, such as more complex heat dissipation systems, increased bombardment of various components facing plasma, and shortened lifespan.

如圖1-圖3所示，圖1示出了習知技術中的CCP設備形成的射頻RF訊號隨時間T變化的曲線圖，圖2示出了習知技術中的CCP設備形成的等離子體電位（即，plasma voltage）隨時間T變化的曲線圖，圖3示出了習知技術中的CCP設備中的待處理襯底表面的自偏壓（Vdc）隨時間T變化的曲線圖；從圖1、圖2和圖3可以看出，在進入到CCP設備的腔體內的射頻訊號的正半週期內，所述待處理襯底表面的電位為正，所述待處理襯底與等離子體之間會維持恒定的鞘層電壓，以維持等離子體呈準中性。因此，在該正半週期內，等離子體的電位會隨著待處理襯底表面電位的變化而變化，待處理襯底表面的自偏壓就等於鞘層電壓；在射頻訊號的負半週期內，所述待處理襯底表面的電位為負。由於此時等離子體的上表面與接地的上電極結構中的氣體噴淋頭之間仍然存在一個恒定電位的鞘層電壓以維持等離子體呈電中性。因此，在該負半週期內，等離子體電位維持不變，待處理襯底表面的自偏壓等於射頻電壓與鞘層電壓之和，並隨著射頻電壓的變化而變化，如圖3所示，使得在待處理襯底表面形成的平均自偏壓較小。As shown in Figures 1 to 3, Figure 1 shows a graph of the radio frequency RF signal formed by the CCP device in the prior art over time T, and Figure 2 shows the plasma formed by the CCP device in the prior art A graph of potential (ie, plasma voltage) variation with time T. FIG. 3 shows a graph of the self-bias voltage (Vdc) of the surface of the substrate to be processed in a CCP device in the prior art with time T; It can be seen from Figure 1, Figure 2 and Figure 3 that during the positive half cycle of the radio frequency signal entering the cavity of the CCP device, the potential of the surface of the substrate to be processed is positive, and the substrate to be processed and the plasma A constant sheath voltage is maintained in between to maintain a quasi-neutral plasma. Therefore, in the positive half period, the potential of the plasma will change with the change of the surface potential of the substrate to be processed, and the self-bias voltage on the surface of the substrate to be processed is equal to the sheath voltage; in the negative half period of the radio frequency signal , The potential of the surface of the substrate to be processed is negative. At this time, there is still a constant potential sheath voltage between the upper surface of the plasma and the gas shower head in the grounded upper electrode structure to maintain the plasma to be electrically neutral. Therefore, during the negative half period, the plasma potential remains unchanged, and the self-bias voltage on the surface of the substrate to be processed is equal to the sum of the RF voltage and the sheath voltage, and changes with the change of the RF voltage, as shown in Figure 3. , So that the average self-bias formed on the surface of the substrate to be processed is small.

有鑑於此，本發明實施例提供了一種等離子體處理設備，如圖4所示，所述等離子體處理設備包括： 等離子體處理腔室10； 位於所述等離子體處理腔室10內，相對設置的第一電極結構20和第二電極結構30； 與所述第一電極結構20電連接的訊號處理器40以及與所述訊號處理器40電連接的訊號發生器50。所述訊號發生器50用於產生第一訊號，所述訊號處理器40用於對所述第一訊號進行處理後，饋入到所述第一電極結構20和所述第二電極結構30之間，以產生等離子體。 其中，所述訊號處理器40包括第一訊號處理器41，用於將所述第一訊號轉換成第二訊號。其中，所述第二訊號對應的函數為第一函數的n次方異號的函數，所述第一函數為週期性正弦函數或週期性餘弦函數，其中，n為大於零的偶數。In view of this, an embodiment of the present invention provides a plasma processing device. As shown in FIG. 4, the plasma processing device includes: Plasma processing chamber 10; The first electrode structure 20 and the second electrode structure 30 are located opposite to each other in the plasma processing chamber 10; A signal processor 40 electrically connected to the first electrode structure 20 and a signal generator 50 electrically connected to the signal processor 40. The signal generator 50 is used to generate a first signal, and the signal processor 40 is used to process the first signal and feed it into the first electrode structure 20 and the second electrode structure 30 Time to generate plasma. The signal processor 40 includes a first signal processor 41 for converting the first signal into a second signal. Wherein, the function corresponding to the second signal is a function of the n-th power of the first function with an opposite sign, and the first function is a periodic sine function or a periodic cosine function, where n is an even number greater than zero.

本發明實施例所提供的等離子體處理設備，包括：相對設置的第一電極結構20和第二電極結構30，與所述第一電極結構20電連接的訊號處理器40以及與所述訊號處理器40電連接的訊號發生器50。所述訊號發生器50用於產生第一訊號，所述訊號處理器40用於對所述第一訊號進行處理後饋入到第一電極結構20和第二電極結構30之間，以產生等離子體。其中，所述訊號處理器包括第一訊號處理器，用於將所述第一訊號轉換成第二訊號。其中，所述第二訊號為第一函數的n次方異號的函數，所述第一函數為週期性正弦函數或週期性餘弦函數，其中，n為大於零的偶數，從而使得饋入到所述第一電極結構20和所述第二電極結構30之間的第二訊號的函數值始終為負值，進而使得待處理襯底表面的電位始終為負值，以此在待處理襯底表面形成一個較高的自偏壓，實現提高所述等離子體處理設備中的自偏壓的目的，更適於對待處理襯底進行高深寬比蝕刻的應用。The plasma processing equipment provided by the embodiment of the present invention includes: a first electrode structure 20 and a second electrode structure 30 arranged opposite to each other, a signal processor 40 electrically connected to the first electrode structure 20, and a signal processor 40 connected to the signal processing device. The signal generator 50 is electrically connected to the device 40. The signal generator 50 is used to generate a first signal, and the signal processor 40 is used to process the first signal and feed it between the first electrode structure 20 and the second electrode structure 30 to generate plasma body. Wherein, the signal processor includes a first signal processor for converting the first signal into a second signal. Wherein, the second signal is a function with a different sign to the nth power of the first function, and the first function is a periodic sine function or a periodic cosine function, where n is an even number greater than zero, so that the The function value of the second signal between the first electrode structure 20 and the second electrode structure 30 is always negative, so that the potential of the surface of the substrate to be processed is always negative, so that the A higher self-bias voltage is formed on the surface to achieve the purpose of increasing the self-bias voltage in the plasma processing equipment, which is more suitable for the application of high aspect ratio etching of the substrate to be processed.

需要說明的是，本發明中所述第二電極結構30接地，以在所述第一電極結構20和所述第二電極結構30之間形成電位差，便於位於所述第一電極結構20和所述第二電極結構30之間的製程氣體電離形成等離子體，最後通過所述第二電極結構30和所述等離子體處理腔室10回到訊號發生器50形成閉合回路。It should be noted that in the present invention, the second electrode structure 30 is grounded to form a potential difference between the first electrode structure 20 and the second electrode structure 30, which is convenient to be located between the first electrode structure 20 and the second electrode structure 30. The process gas between the second electrode structure 30 ionizes to form plasma, and finally returns to the signal generator 50 through the second electrode structure 30 and the plasma processing chamber 10 to form a closed loop.

在上述實施例的基礎上，在本發明的一個實施例中，所述第一電極結構20為下電極結構，所述第二電極結構30為上電極結構，且所述上電極結構接地。在本發明的另一個實施例中，所述第一電極結構20為上電極結構，所述第二電極結構30為下電極結構，且所述下電極結構接地。本發明對此並不做限定，具體視情況而定。下面以所述第一電極結構20為下電極結構，所述第二電極結構30為上電極結構，且所述上電極結構接地為例進行描述。On the basis of the foregoing embodiment, in an embodiment of the present invention, the first electrode structure 20 is a lower electrode structure, the second electrode structure 30 is an upper electrode structure, and the upper electrode structure is grounded. In another embodiment of the present invention, the first electrode structure 20 is an upper electrode structure, the second electrode structure 30 is a lower electrode structure, and the lower electrode structure is grounded. The present invention does not limit this, and it depends on the situation. In the following description, the first electrode structure 20 is the lower electrode structure, the second electrode structure 30 is the upper electrode structure, and the upper electrode structure is grounded as an example for description.

繼續如圖4所示，在本發明的一個實施例中，所述第一電極結構20包括靜電吸盤裝置21，所述靜電吸盤裝置21包括靜電吸盤和位於所述靜電吸盤下方的基座。所述靜電吸盤用於放置待處理襯底22。所述第二電極結構30包括氣體噴淋頭31，所述氣體噴淋頭31用於向所述等離子體處理腔室10中通入製程氣體，較佳的，所述氣體噴淋頭31接地，以在所述第一電極結構20和所述第二電極結構30之間形成電位差，便於位於所述第一電極結構20和所述第二電極結構30之間的製程氣體電離形成等離子體，最後通過所述第二電極結構30和所述等離子體處理腔室10回到訊號發生器50形成閉合回路。其中，所述等離子體處理腔室10接地。但本發明對此並不做限定具體視情況而定。As shown in FIG. 4, in an embodiment of the present invention, the first electrode structure 20 includes an electrostatic chuck device 21, and the electrostatic chuck device 21 includes an electrostatic chuck and a base located under the electrostatic chuck. The electrostatic chuck is used to place the substrate 22 to be processed. The second electrode structure 30 includes a gas shower head 31. The gas shower head 31 is used to pass process gas into the plasma processing chamber 10. Preferably, the gas shower head 31 is grounded. , To form a potential difference between the first electrode structure 20 and the second electrode structure 30 to facilitate ionization of the process gas between the first electrode structure 20 and the second electrode structure 30 to form plasma, Finally, the second electrode structure 30 and the plasma processing chamber 10 return to the signal generator 50 to form a closed loop. Wherein, the plasma processing chamber 10 is grounded. However, the present invention does not limit this to specific circumstances.

較佳的，在上述任一實施例的基礎上，在本發明的一個實施例中，所述訊號發生器50為頻率發生器，用於產生射頻訊號，但本發明對此並不做限定，在本發明的其他實施例中，所述訊號發生器50也可以為其他射頻訊號產生裝置，具體視情況而定。Preferably, on the basis of any of the above embodiments, in an embodiment of the present invention, the signal generator 50 is a frequency generator for generating radio frequency signals, but the present invention does not limit this. In other embodiments of the present invention, the signal generator 50 may also be other radio frequency signal generating devices, depending on the situation.

本發明實施例中提供的等離子體處理設備中，由於與第一電極結構20電連接的訊號處理器40所包括的第一訊號處理器41能夠將所述第一訊號轉換成第二訊號。其中，所述第二訊號對應的函數為第一函數的n次方的異號函數，所述第一函數為週期性正弦函數或週期性餘弦函數。其中，n為大於零的偶數，從而使得饋入到所述第一電極結構和所述第二電極結構之間的第二訊號的函數值始終為負值，進而使得靜電吸盤上的待處理襯底表面的電位始終為負值。又由於等離子體的電位由接地的上電極結構的表面的鞘層電壓決定，以此在待處理襯底22的表面上形成的自偏壓的瞬時值始終等於射頻電壓與鞘層電壓之和，從而在待處理襯底22的表面形成一個較高的自偏壓。由此可見，本發明實施例所提供的等離子體處理設備無需增大射頻功率，也無需改變等離子體的腔體結構，可以在保持等離子體處理設備的腔體結構和射頻功率的前提下，實現提高所述等離子體處理設備中的自偏壓的目的。In the plasma processing equipment provided in the embodiment of the present invention, the first signal processor 41 included in the signal processor 40 electrically connected to the first electrode structure 20 can convert the first signal into a second signal. Wherein, the function corresponding to the second signal is a function with an opposite sign to the nth power of the first function, and the first function is a periodic sine function or a periodic cosine function. Wherein, n is an even number greater than zero, so that the function value of the second signal fed between the first electrode structure and the second electrode structure is always a negative value, thereby making the substrate to be processed on the electrostatic chuck The potential of the bottom surface is always negative. Since the potential of the plasma is determined by the sheath voltage on the surface of the grounded upper electrode structure, the instantaneous value of the self-bias voltage formed on the surface of the substrate 22 to be processed is always equal to the sum of the radio frequency voltage and the sheath voltage. Thus, a relatively high self-bias voltage is formed on the surface of the substrate 22 to be processed. It can be seen that the plasma processing equipment provided by the embodiments of the present invention does not need to increase the radio frequency power, nor does it need to change the plasma cavity structure, which can be achieved under the premise of maintaining the plasma processing equipment cavity structure and radio frequency power. The purpose of increasing the self-bias voltage in the plasma processing equipment.

而且，由於靜電吸盤上的待處理襯底22的表面的電位始終為負值，且所述待處理襯底22與等離子體之間會維持恒定的鞘層電壓，以維持等離子體呈電中性，從而使得等離子體的電位始終不變。因此，本發明實施例所提供的等離子體處理設備所產生的等離子體的穩定性更高。Moreover, since the potential of the surface of the substrate 22 to be processed on the electrostatic chuck is always a negative value, and a constant sheath voltage is maintained between the substrate 22 to be processed and the plasma, so as to maintain the plasma to be electrically neutral. , So that the potential of the plasma is always constant. Therefore, the plasma generated by the plasma processing device provided by the embodiment of the present invention has higher stability.

另外，由於等離子體和靠近等離子體的上電極結構的表面之間只存在一個鞘層電壓差。因此，靠近等離子體的上電極結構的表面受到的等離子體的轟擊能量也比較弱，有利於上電極結構的使用壽命的延長。In addition, there is only one sheath voltage difference between the plasma and the surface of the upper electrode structure close to the plasma. Therefore, the bombardment energy of the plasma on the surface of the upper electrode structure close to the plasma is also relatively weak, which is beneficial to prolong the service life of the upper electrode structure.

在本發明上述任一實施例的基礎上，在本發明的一個實施例中，所述第一訊號對應的函數為第一函數，即所述第二訊號對應的函數為與第一訊號對應的函數的n次方異號的函數；在本發明的另一個實施例中，所述第一訊號對應的函數為第二函數，所述第二函數與所述第一函數互為正餘弦函數，即所述第一函數為正弦函數時，所述第二函數為餘弦函數，所述第一函數為餘弦函數時，所述第二函數為正弦函數，本發明對此並不做限定，具體視情況而定。On the basis of any of the foregoing embodiments of the present invention, in an embodiment of the present invention, the function corresponding to the first signal is the first function, that is, the function corresponding to the second signal is the function corresponding to the first signal A function of the n-th power of a function with an opposite sign; in another embodiment of the present invention, the function corresponding to the first signal is a second function, and the second function and the first function are sine and cosine functions, That is, when the first function is a sine function, the second function is a cosine function, and when the first function is a cosine function, the second function is a sine function, which is not limited by the present invention. It depends on the situation.

具體的，在本發明的一個實施例中，所述第一訊號的波形為sinwt波形，所述第二訊號的波形可以為-sin2 wt波形。在本發明的另一個實施例中，所述第一訊號的波形為sinwt波形，所述第二訊號的波形也可以為-cos2 wt波形。在本發明的又一個實施例中，所述第一訊號的波形為cos wt波形，所述第二訊號的波形可以為-cos2 wt波形。在本發明的再一個實施例中，所述第一訊號的波形為coswt波形，所述第二訊號的波形也可以為-sin2 wt波形。在本發明的其他實施例中，所述第一訊號的波形為sinwt波形，所述第二訊號的波形還可以為-sin4 wt或-cos4 wt波形。本發明對此不做限定，只要保證第二訊號的波形為-sinn wt或-cosn wt波形，n為大於零的偶數即可，具體視情況而定。Specifically, in an embodiment of the present invention, the waveform of the first signal is a sinwt waveform, and the waveform of the second signal may be a -sin 2 wt waveform. In another embodiment of the present invention, the waveform of the first signal is a sinwt waveform, and the waveform of the second signal may also be a -cos 2 wt waveform. In another embodiment of the present invention, the waveform of the first signal is a cos wt waveform, and the waveform of the second signal may be a -cos 2 wt waveform. In still another embodiment of the present invention, the waveform of the first signal is a coswt waveform, and the waveform of the second signal may also be a -sin 2 wt waveform. In other embodiments of the present invention, the waveform of the first signal is a sinwt waveform, and the waveform of the second signal may also be a -sin 4 wt or -cos 4 wt waveform. The present invention does not limit this, as long as it is ensured that the waveform of the second signal is -sin n wt or -cos n wt, and n is an even number greater than zero, depending on the situation.

在本發明上述任一實施例的基礎上，在本發明的一個實施例中，如圖5所示，所述第一訊號處理器41包括： 類比訊號乘法器411，用於將所述第一訊號轉換成第三訊號，所述第三訊號對應的函數為第一函數的n次方的函數，以使得所述第三訊號的函數值始終為正值； 反相器412，用於將所述第三訊號轉換成第二訊號，由於所述第二訊號對應的函數為第一函數的n次方異號的函數，以使得所述第二訊號的函數值始終為負值，從而使得待處理襯底22的表面上形成的自偏壓的瞬時值始終等於射頻電壓與鞘層電壓之和，進而在待處理襯底表面形成一個較高的自偏壓。On the basis of any of the foregoing embodiments of the present invention, in an embodiment of the present invention, as shown in FIG. 5, the first signal processor 41 includes: The analog signal multiplier 411 is used to convert the first signal into a third signal, and the function corresponding to the third signal is a function of the nth power of the first function, so that the function value of the third signal is always Positive value The inverter 412 is used to convert the third signal into a second signal. Since the function corresponding to the second signal is a function of the n-th power of the first function, the function of the second signal is The value is always negative, so that the instantaneous value of the self-bias voltage formed on the surface of the substrate 22 to be processed is always equal to the sum of the radio frequency voltage and the sheath voltage, thereby forming a higher self-bias voltage on the surface of the substrate to be processed .

在本發明上述任一實施例的基礎上，在本發明的一個實施例中，如圖6所示，所述訊號處理器40還包括：第二訊號處理器42，所述第二訊號處理器42用於將所述第二訊號放大後，饋入到所述第一電極結構20和所述第二電極結構30之間，以增大饋入到所述第一電極結構20和所述第二電極結構30之間的射頻訊號強度。On the basis of any of the foregoing embodiments of the present invention, in an embodiment of the present invention, as shown in FIG. 6, the signal processor 40 further includes: a second signal processor 42, the second signal processor 42 is used to amplify the second signal and feed it between the first electrode structure 20 and the second electrode structure 30 to increase the feed to the first electrode structure 20 and the second electrode structure. The strength of the radio frequency signal between the two electrode structures 30.

具體的，在本發明上述實施例的基礎上，在本發明的一個實施例中，如圖7所示，所述第二訊號處理器42包括：功率放大器421和匹配器422；其中，功率放大器421用於對所述第二訊號進行放大；匹配器422用於匹配第一阻抗和第二阻抗。其中，所述第一阻抗為所述訊號發生器50中的阻抗，所述第二阻抗為所述訊號發生器50至所述第二電極結構30所在支路上的所有阻抗之和，以使饋入到所述第一電極結構20和所述第二電極結構30之間的射頻訊號強度最大，從而以最大程度的提高等離子體處理腔室內的等離子體的能量，提高等離子體的蝕刻效果。Specifically, on the basis of the foregoing embodiment of the present invention, in an embodiment of the present invention, as shown in FIG. 7, the second signal processor 42 includes: a power amplifier 421 and a matcher 422; wherein, the power amplifier 421 is used to amplify the second signal; the matcher 422 is used to match the first impedance and the second impedance. Wherein, the first impedance is the impedance in the signal generator 50, and the second impedance is the sum of all impedances on the branch where the signal generator 50 to the second electrode structure 30 are located, so that the feed The radio frequency signal entering between the first electrode structure 20 and the second electrode structure 30 has the greatest intensity, thereby maximizing the energy of the plasma in the plasma processing chamber and improving the etching effect of the plasma.

具體的，如圖8-圖10所示，圖8示出了本發明所提供的等離子體處理設備形成的射頻RF訊號隨時間T變化的曲線圖，圖9示出了本發明所提供的等離子體處理設備形成的等離子體電位Plasma voltage隨時間T變化的曲線圖，圖10示出了本發明所提供的等離子體處理設備中的待處理襯底表面的自偏壓Vdc隨時間T變化的曲線圖。Specifically, as shown in Figures 8-10, Figure 8 shows a graph of the radio frequency RF signal formed by the plasma processing equipment provided by the present invention over time T, and Figure 9 shows the plasma provided by the present invention. A graph of the plasma potential Plasma voltage formed by the bulk processing device with time T. FIG. 10 shows the curve of the self-bias voltage Vdc on the surface of the substrate to be processed in the plasma processing device provided by the present invention with time T. Figure.

從圖8、圖9以及圖10可以看出，本發明實施例所提供的等離子體處理設備中，所述頻率發生器產生的射頻RF訊號依次經過類比訊號乘法器411、反相器412、功率放大器421和適配器422之後，進入到等離子體處理設備的等離子體處理腔室10內的射頻訊號的函數值始終為負值。又由於等離子體的電位由接地的上電極結構的表面的鞘層電壓決定。因此，本發明實施例所提供的等離子體處理設備可以使得待處理襯底22的表面上形成的自偏壓的瞬時值始終等於射頻電壓與鞘層電壓之和，在待處理襯底22的表面形成一個較高的平均自偏壓。It can be seen from FIG. 8, FIG. 9 and FIG. 10 that in the plasma processing equipment provided by the embodiment of the present invention, the radio frequency RF signal generated by the frequency generator passes through the analog signal multiplier 411, the inverter 412, and the power in sequence. After the amplifier 421 and the adapter 422, the function value of the radio frequency signal entering the plasma processing chamber 10 of the plasma processing equipment is always a negative value. In addition, the potential of the plasma is determined by the sheath voltage on the surface of the grounded upper electrode structure. Therefore, the plasma processing equipment provided by the embodiment of the present invention can make the instantaneous value of the self-bias voltage formed on the surface of the substrate 22 to be processed always equal to the sum of the radio frequency voltage and the sheath voltage. A higher average self-bias voltage is formed.

相應的，本發明還提供了一種等離子體處理方法，該等離子體處理方法應用於上述任一實施例中提供的等離子體處理設備，如圖11所示，該等離子體處理方法包括下列步驟： S10：將待處理襯底放置在等離子體處理腔室內的第一電極結構上； S20：啟動所述訊號發生器和所述訊號處理器，利用所述訊號處理器將對所述訊號發生器產生的第一訊號進行處理後饋入到所述第一電極結構和所述第二電極結構之間，並向所述等離子體處理腔室內通入製程氣體，以在所述第一電極結構和所述第二電極結構之間產生等離子體，對所述待處理襯底進行處理； 其中，所述訊號處理器包括第一訊號處理器，用於將所述第一訊號轉換成第二訊號。其中，所述第二訊號對應的函數為第一函數的n次方異號的函數，所述第一函數為週期性正弦函數或週期性餘弦函數，其中，n為大於零的偶數。Correspondingly, the present invention also provides a plasma processing method, which is applied to the plasma processing equipment provided in any of the foregoing embodiments. As shown in FIG. 11, the plasma processing method includes the following steps: S10: Place the substrate to be processed on the first electrode structure in the plasma processing chamber; S20: Start the signal generator and the signal processor, and use the signal processor to process the first signal generated by the signal generator and feed it to the first electrode structure and the second electrode structure. Between the electrode structures and pass a process gas into the plasma processing chamber to generate plasma between the first electrode structure and the second electrode structure to process the substrate to be processed; Wherein, the signal processor includes a first signal processor for converting the first signal into a second signal. Wherein, the function corresponding to the second signal is a function of the n-th power of the first function with an opposite sign, and the first function is a periodic sine function or a periodic cosine function, where n is an even number greater than zero.

在上述實施例的基礎上，在本發明的一個實施例中，所述第一電極結構為下電極結構，所述第二電極結構為上電極結構，且所述上電極結構接地。在本發明的另一個實施例中，所述第一電極結構為上電極結構，所述第二電極結構為下電極結構，且所述下電極結構接地。本發明對此並不做限定，具體視情況而定。下面以所述第一電極結構為下電極結構，所述第二電極結構為上電極結構，且所述上電極結構接地為例進行描述。On the basis of the foregoing embodiment, in an embodiment of the present invention, the first electrode structure is a lower electrode structure, the second electrode structure is an upper electrode structure, and the upper electrode structure is grounded. In another embodiment of the present invention, the first electrode structure is an upper electrode structure, the second electrode structure is a lower electrode structure, and the lower electrode structure is grounded. The present invention does not limit this, and it depends on the situation. In the following description, the first electrode structure is the lower electrode structure, the second electrode structure is the upper electrode structure, and the upper electrode structure is grounded as an example for description.

在本發明上述任一實施例的基礎上，在本發明的一個實施例中，所述第一電極結構包括靜電吸盤裝置，所述靜電吸盤裝置包括靜電吸盤和位於所述靜電吸盤下方的基座，所述靜電吸盤用於放置待處理襯底，所述第二電極結構包括氣體噴淋頭，所述氣體噴淋頭用於向所述等離子體處理腔室中通入製程氣體。較佳的，所述氣體噴淋頭接地，以在所述第一電極結構和所述第二電極結構之間形成電位差，便於位於所述第一電極結構和所述第二電極結構之間的製程氣體電離形成等離子體，最後通過所述第二電極結構和所述等離子體處理腔室回到訊號發生器形成閉合回路，其中，所述等離子體處理腔室接地。但本發明對此並不做限定，具體視情況而定。On the basis of any of the foregoing embodiments of the present invention, in an embodiment of the present invention, the first electrode structure includes an electrostatic chuck device, and the electrostatic chuck device includes an electrostatic chuck and a base located below the electrostatic chuck The electrostatic chuck is used to place the substrate to be processed, and the second electrode structure includes a gas shower head, and the gas shower head is used to pass process gas into the plasma processing chamber. Preferably, the gas shower head is grounded to form a potential difference between the first electrode structure and the second electrode structure, so as to facilitate the communication between the first electrode structure and the second electrode structure. The process gas is ionized to form plasma, and finally returns to the signal generator through the second electrode structure and the plasma processing chamber to form a closed loop, wherein the plasma processing chamber is grounded. However, the present invention does not limit this, and it depends on the situation.

較佳的，在上述任一實施例的基礎上，在本發明的一個實施例中，所述訊號發生器為頻率發生器，用於產生射頻訊號，但本發明對此並不做限定。在本發明的其他實施例中，所述訊號發生器也可以為其他射頻訊號產生裝置，具體視情況而定。Preferably, on the basis of any of the foregoing embodiments, in an embodiment of the present invention, the signal generator is a frequency generator for generating radio frequency signals, but the present invention does not limit this. In other embodiments of the present invention, the signal generator may also be other radio frequency signal generating devices, depending on the situation.

本發明實施例中提供的等離子體處理方法中，由於與第一電極結構電連接的訊號處理器所包括的第一訊號處理器能夠將所述第一訊號轉換成第二訊號。其中，所述第二訊號對應的函數為第一函數的n次方的異號函數，所述第一函數為週期性正弦函數或週期性餘弦函數，其中，n為大於零的偶數，從而使得饋入到所述第一電極結構和所述第二電極結構之間的第二訊號的函數值始終為負值，進而使得靜電吸盤上的待處理襯底表面的電位始終為負值。又由於等離子體的電位由接地的上電極結構的表面的鞘層電壓決定，以此在待處理襯底表面上形成的自偏壓的瞬時值始終等於射頻電壓與鞘層電壓之和，從而在待處理襯底表面形成一個較高的自偏壓。由此可見，本發明實施例所提供的等離子體處理設備無需增大射頻功率，也無需改變等離子體的腔體結構，可以在保持等離子體處理設備的腔體結構和射頻功率的前提下，實現提高所述等離子體處理設備中的自偏壓的目的。In the plasma processing method provided in the embodiment of the present invention, the first signal processor included in the signal processor electrically connected to the first electrode structure can convert the first signal into the second signal. Wherein, the function corresponding to the second signal is a function with an opposite sign to the nth power of the first function, and the first function is a periodic sine function or a periodic cosine function, where n is an even number greater than zero, so that The function value of the second signal fed between the first electrode structure and the second electrode structure is always negative, so that the potential of the surface of the substrate to be processed on the electrostatic chuck is always negative. Since the potential of the plasma is determined by the sheath voltage on the surface of the grounded upper electrode structure, the instantaneous value of the self-bias voltage formed on the surface of the substrate to be processed is always equal to the sum of the radio frequency voltage and the sheath voltage. A higher self-bias voltage is formed on the surface of the substrate to be processed. It can be seen that the plasma processing equipment provided by the embodiments of the present invention does not need to increase the radio frequency power, nor does it need to change the plasma cavity structure, which can be achieved under the premise of maintaining the plasma processing equipment cavity structure and radio frequency power. The purpose of increasing the self-bias voltage in the plasma processing equipment.

而且，由於靜電吸盤上的待處理襯底表面的電位始終為負值，且所述待處理襯底與等離子體之間會維持恒定的鞘層電壓，以維持等離子體呈電中性，從而使得等離子體的電位始終不變。因此，本發明實施例所提供的等離子體處理設備所產生的等離子體的穩定性更高。Moreover, because the potential of the surface of the substrate to be processed on the electrostatic chuck is always negative, and a constant sheath voltage is maintained between the substrate to be processed and the plasma to maintain the plasma to be electrically neutral, so that The potential of the plasma is always constant. Therefore, the plasma generated by the plasma processing device provided by the embodiment of the present invention has higher stability.

另外，由於等離子體和靠近等離子體的上電極結構的表面之間只存在一個鞘層電壓差。因此，靠近等離子體的上電極結構的表面受到的等離子體的轟擊能量也比較弱，有利於上電極結構的使用壽命的延長。In addition, there is only one sheath voltage difference between the plasma and the surface of the upper electrode structure close to the plasma. Therefore, the bombardment energy of the plasma on the surface of the upper electrode structure close to the plasma is also relatively weak, which is beneficial to prolong the service life of the upper electrode structure.

在本發明上述任一實施例的基礎上，在本發明的一個實施例中，所述第一訊號為第一函數，即所述第二訊號對應的函數為與第一訊號對應的函數的n次方異號的函數；在本發明的另一個實施例中，所述第一訊號對應的函數為第二函數，所述第二函數與所述第一函數互為正餘弦函數，即所述第一函數為正弦函數時，所述第二函數為餘弦函數，所述第一函數為餘弦函數時，所述第二函數為正弦函數，本發明對此並不做限定，具體視情況而定。On the basis of any of the foregoing embodiments of the present invention, in one embodiment of the present invention, the first signal is a first function, that is, the function corresponding to the second signal is n of the function corresponding to the first signal. In another embodiment of the present invention, the function corresponding to the first signal is a second function, and the second function and the first function are sine and cosine functions, that is, the When the first function is a sine function, the second function is a cosine function, and when the first function is a cosine function, the second function is a sine function. The present invention does not limit this, and it depends on the situation. .

具體的，在本發明的一個實施例中，所述第一訊號的波形為sinwt波形，所述第二訊號的波形可以為-sin2 wt波形。在本發明的另一個實施例中，所述第一訊號的波形為sinwt波形，所述第二訊號的波形也可以為-cos2 wt波形。在本發明的又一個實施例中，所述第一訊號的波形為cos wt波形，所述第二訊號的波形可以為-cos2 wt波形，在本發明的再一個實施例中，所述第一訊號的波形為coswt波形，所述第二訊號的波形也可以為-sin2 wt波形。在本發明的其他實施例中，所述第一訊號的波形為sinwt波形，所述第二訊號的波形還可以為-sin4 wt或-cos4 wt波形。本發明對此不做限定，只要保證第二訊號的波形為-sinn wt或-cosn wt波形，n為大於零的偶數即可，具體視情況而定。Specifically, in an embodiment of the present invention, the waveform of the first signal is a sinwt waveform, and the waveform of the second signal may be a -sin 2 wt waveform. In another embodiment of the present invention, the waveform of the first signal is a sinwt waveform, and the waveform of the second signal may also be a -cos 2 wt waveform. In another embodiment of the present invention, the waveform of the first signal is a cos wt waveform, and the waveform of the second signal may be a -cos 2 wt waveform. In still another embodiment of the present invention, the first signal The waveform of the first signal is a coswt waveform, and the waveform of the second signal may also be a -sin 2 wt waveform. In other embodiments of the present invention, the waveform of the first signal is a sinwt waveform, and the waveform of the second signal may also be a -sin 4 wt or -cos 4 wt waveform. The present invention does not limit this, as long as it is ensured that the waveform of the second signal is -sin n wt or -cos n wt, and n is an even number greater than zero, depending on the situation.

在本發明上述任一實施例的基礎上，在本發明的一個實施例中，所述第一訊號處理器包括：類比訊號乘法器和反相器；在本發明實施例中，利用所述訊號處理器將對所述訊號發生器產生的第一訊號進行處理後饋入到所述第一電極結構和所述第二電極結構之間包括下列步驟： 利用所述類比訊號乘法器將所述第一訊號轉換成第三訊號輸出給所述反相器，所述第三訊號對應的函數為第一函數的n次方的函數，以使得所述第三訊號的函數值始終為正值； 利用所述反相器將所述第三訊號轉換成第二訊號，由於所述第二訊號為第一函數的n次方異號的函數，以使得所述第二訊號的函數值始終為負值，從而使得待處理襯底表面上形成的自偏壓的瞬時值始終等於射頻電壓與鞘層電壓之和，進而在待處理襯底表面形成一個較高的自偏壓。On the basis of any of the foregoing embodiments of the present invention, in one embodiment of the present invention, the first signal processor includes: an analog signal multiplier and an inverter; in the embodiment of the present invention, the signal is used The processor processes the first signal generated by the signal generator and feeds it between the first electrode structure and the second electrode structure, including the following steps: The analog signal multiplier is used to convert the first signal into a third signal and output to the inverter. The function corresponding to the third signal is a function of the nth power of the first function, so that the first signal is The function value of the three signals is always positive; The inverter is used to convert the third signal into a second signal. Since the second signal is a function of the n-th power of the first function, the function value of the second signal is always negative Therefore, the instantaneous value of the self-bias voltage formed on the surface of the substrate to be processed is always equal to the sum of the radio frequency voltage and the sheath voltage, thereby forming a higher self-bias voltage on the surface of the substrate to be processed.

在本發明上述任一實施例的基礎上，在本發明的一個實施例中，所述訊號處理器還包括：第二訊號處理器，在本發明實施例中，利用所述訊號處理器將對所述訊號發生器產生的第一訊號進行處理後饋入到所述第一電極結構和所述第二電極結構之間還包括下列步驟： 利用所述第二訊號處理器將所述第二訊號放大後，饋入到所述第一電極結構和所述第二電極結構之間，以增大饋入到所述第一電極結構和所述第二電極結構之間的射頻訊號強度。On the basis of any of the foregoing embodiments of the present invention, in an embodiment of the present invention, the signal processor further includes: a second signal processor. In the embodiment of the present invention, the signal processor is used to Feeding the first signal generated by the signal generator between the first electrode structure and the second electrode structure after processing further includes the following steps: After the second signal processor is used to amplify the second signal, it is fed between the first electrode structure and the second electrode structure to increase the feeding to the first electrode structure and the second electrode structure. The strength of the radio frequency signal between the second electrode structures.

具體的，在本發明上述實施例的基礎上，在本發明的一個實施例中，所述第二訊號處理器包括：功率放大器和匹配器；在本實施例中，利用所述第二訊號處理器將所述第二訊號放大後，饋入到所述第一電極結構和所述第二電極結構之間包括下列步驟： 利用所述功率放大器將所述第二訊號放大後輸出給所述匹配器； 利用所述匹配器匹配第一阻抗和第二阻抗，其中，所述第一阻抗為所述訊號發生器中的阻抗，所述第二阻抗為所述訊號發生器至所述第二電極結構所在支路上的所有阻抗之和，以使饋入到所述第一電極結構和所述第二電極結構之間的射頻訊號強度最大，從而以最大程度的提高等離子體處理腔室內的等離子體的能量，提高等離子體的蝕刻效果。Specifically, on the basis of the foregoing embodiment of the present invention, in an embodiment of the present invention, the second signal processor includes: a power amplifier and a matching device; in this embodiment, the second signal processing After amplifying the second signal by the amplifier, feeding it between the first electrode structure and the second electrode structure includes the following steps: Amplify the second signal by using the power amplifier and output it to the matcher; Use the matcher to match the first impedance and the second impedance, wherein the first impedance is the impedance in the signal generator, and the second impedance is the location from the signal generator to the second electrode structure. The sum of all impedances on the branch to maximize the intensity of the radio frequency signal fed between the first electrode structure and the second electrode structure, thereby maximizing the energy of the plasma in the plasma processing chamber , Improve the etching effect of plasma.

綜上可知，本發明實施例中提供的等離子體處理設備及其等離子處理方法中，由於與第一電極結構電連接的訊號處理器所包括的第一訊號處理器能夠將所述第一訊號轉換成第二訊號。其中，所述第二訊號對應的函數為第一函數的n次方異號的函數，所述第一函數為週期性正弦函數或週期性餘弦函數。其中，n為大於零的偶數，從而使得饋入到所述第一電極結構和所述第二電極結構之間的第二訊號的函數值始終為負值，進而使得靜電吸盤上的待處理襯底表面的電位始終為負值。又由於等離子體的電位由接地的上電極結構的表面的鞘層電壓決定，以此在待處理襯底表面上形成的自偏壓的瞬時值始終等於射頻電壓與鞘層電壓之和，從而在待處理襯底表面形成一個較高的自偏壓。由此可見，本發明實施例所提供的等離子體處理設備而無需增大射頻功率，也無需改變等離子體的腔體結構，可以在保持等離子體處理設備的腔體結構和射頻功率的前提下，實現提高所述等離子體處理設備中的自偏壓的目的。In summary, in the plasma processing equipment and its plasma processing method provided in the embodiments of the present invention, the first signal processor included in the signal processor electrically connected to the first electrode structure can convert the first signal Into the second signal. Wherein, the function corresponding to the second signal is a function of the n-th power opposite sign of the first function, and the first function is a periodic sine function or a periodic cosine function. Wherein, n is an even number greater than zero, so that the function value of the second signal fed between the first electrode structure and the second electrode structure is always a negative value, thereby making the substrate to be processed on the electrostatic chuck The potential of the bottom surface is always negative. Since the potential of the plasma is determined by the sheath voltage on the surface of the grounded upper electrode structure, the instantaneous value of the self-bias voltage formed on the surface of the substrate to be processed is always equal to the sum of the radio frequency voltage and the sheath voltage. A higher self-bias voltage is formed on the surface of the substrate to be processed. It can be seen that the plasma processing equipment provided by the embodiments of the present invention does not need to increase the radio frequency power, and does not need to change the plasma cavity structure, and can maintain the cavity structure and radio frequency power of the plasma processing equipment. The purpose of increasing the self-bias voltage in the plasma processing equipment is achieved.

本說明書中各個部分採用並列和遞進的方式描述，每個部分重點說明的都是與其他部分的不同之處，各個部分之間相同相似部分互相參見即可。The various parts in this manual are described in a parallel and progressive manner. Each part focuses on the differences from other parts, and the same or similar parts between the various parts can be referred to each other.

對所公開的實施例的上述說明，使所屬技術領域中具有通常知識者能夠實現或使用本發明。對這些實施例的多種修改對所屬技術領域中具有通常知識者來說將是顯而易見的，本文中所定義的一般原理可以在不脫離本發明的精神或範圍的情況下，在其它實施例中實現。因此，本發明將不會被限制於本文所示的實施例，而是要符合與本文所公開的原理和新穎特點相一致的最寬的範圍。The above description of the disclosed embodiments enables those with ordinary knowledge in the technical field to implement or use the present invention. Various modifications to these embodiments will be obvious to those skilled in the art. The general principles defined in this document can be implemented in other embodiments without departing from the spirit or scope of the present invention. . Therefore, the present invention will not be limited to the embodiments shown in this text, but should conform to the widest scope consistent with the principles and novel features disclosed in this text.

10:等離子體處理腔室 20:第一電極結構 21:靜電吸盤裝置 22:待處理襯底 30:第二電極結構 31:氣體噴淋頭 40:訊號處理器 41:第一訊號處理器 411:類比訊號乘法器 412:反相器 42:第二訊號處理器 421:功率放大器 422:匹配器 50:訊號發生器 S10～S20:步驟10: Plasma processing chamber 20: First electrode structure 21: Electrostatic chuck device 22: Substrate to be processed 30: Second electrode structure 31: Gas sprinkler 40: signal processor 41: The first signal processor 411: Analog signal multiplier 412: inverter 42: second signal processor 421: Power Amplifier 422: matcher 50: signal generator S10～S20: steps

為了更清楚地說明本發明實施例或習知技術中的技術方案，下面將對實施例或習知技術描述中所需要使用的附圖作簡單地介紹，顯而易見地，下面描述中的附圖僅僅是本發明的一些實施例，對於所屬技術領域中具有通常知識者來講，在不付出進步性的改變的前提下，還可以根據這些附圖獲得其他的附圖。 圖1為習知技術中的CCP設備形成的射頻訊號隨時間變化的曲線圖； 圖2為習知技術中的CCP設備形成的等離子體電位隨時間變化的曲線圖； 圖3為習知技術中的CCP設備中的待處理襯底表面的自偏壓隨時間變化的曲線圖； 圖4為本發明實施例所提供的一種等離子體設備的結構示意圖； 圖5為本發明實施例所提供的另一種等離子體設備的結構示意圖； 圖6為本發明實施例所提供的又一種等離子體設備的結構示意圖； 圖7為本發明實施例所提供的再一種等離子體設備的結構示意圖； 圖8為本發明所提供的等離子體處理設備形成的射頻訊號隨時間變化的曲線圖； 圖9為本發明所提供的等離子體處理設備形成的等離子體電位隨時間變化的曲線圖； 圖10為本發明所提供的等離子體處理設備中的待處理襯底表面的自偏壓隨時間變化的曲線圖；以及 圖11為本發明所提供的一種等離子體處理方法的流程示意圖。In order to more clearly describe the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are merely These are some embodiments of the present invention. For those with ordinary knowledge in the technical field, other drawings can be obtained based on these drawings without making any progressive changes. Fig. 1 is a graph showing the time-varying radio frequency signal formed by CCP equipment in the prior art; Fig. 2 is a graph showing changes in plasma potential formed by CCP equipment in the prior art over time; FIG. 3 is a graph showing the change of the self-bias voltage on the surface of the substrate to be processed in the CCP device in the prior art with time; 4 is a schematic structural diagram of a plasma equipment provided by an embodiment of the present invention; 5 is a schematic structural diagram of another plasma equipment provided by an embodiment of the present invention; FIG. 6 is a schematic structural diagram of yet another plasma equipment provided by an embodiment of the present invention; FIG. 7 is a schematic structural diagram of still another plasma equipment provided by an embodiment of the present invention; Fig. 8 is a graph showing changes in radio frequency signal with time formed by the plasma processing equipment provided by the present invention; Fig. 9 is a graph showing changes in plasma potential with time formed by the plasma processing equipment provided by the present invention; 10 is a graph showing the change of the self-bias voltage on the surface of the substrate to be processed with time in the plasma processing equipment provided by the present invention; and FIG. 11 is a schematic flowchart of a plasma processing method provided by the present invention.

10:等離子體處理腔室 10: Plasma processing chamber

20:第一電極結構 20: First electrode structure

21:靜電吸盤裝置 21: Electrostatic chuck device

22:待處理襯底 22: Substrate to be processed

30:第二電極結構 30: Second electrode structure

31:氣體噴淋頭 31: Gas sprinkler

40:訊號處理器 40: signal processor

41:第一訊號處理器 41: The first signal processor

50:訊號發生器 50: signal generator

Claims (10)

一種等離子體處理設備，其中，包括： 一等離子體處理腔室； 一第一電極結構和一第二電極結構，其位於該等離子體處理腔室內，該第一電極結構和該第二電極結構相對設置； 與該第一電極結構電連接的一訊號處理器以及與該訊號處理器電連接的一訊號發生器，該訊號發生器用於產生一第一訊號，該訊號處理器用於對該第一訊號進行處理後，饋入到該第一電極結構和該第二電極結構之間，以產生一等離子體； 其中，該訊號處理器包括一第一訊號處理器，用於將該第一訊號轉換成一第二訊號，其中，該第二訊號對應的函數為與一第一函數的n次方異號的函數，該第一函數為週期性正弦函數或週期性餘弦函數，其中，n為大於零的偶數。A plasma processing equipment, which includes: A plasma processing chamber; A first electrode structure and a second electrode structure, which are located in the plasma processing chamber, and the first electrode structure and the second electrode structure are arranged opposite to each other; A signal processor electrically connected to the first electrode structure and a signal generator electrically connected to the signal processor, the signal generator is used to generate a first signal, and the signal processor is used to process the first signal Then, it is fed between the first electrode structure and the second electrode structure to generate a plasma; Wherein, the signal processor includes a first signal processor for converting the first signal into a second signal, wherein the function corresponding to the second signal is a function of the n-th power opposite sign of a first function , The first function is a periodic sine function or a periodic cosine function, where n is an even number greater than zero. 根據請求項1所述的等離子體處理設備，其中，該第一訊號對應的函數為該第一函數。The plasma processing apparatus according to claim 1, wherein the function corresponding to the first signal is the first function. 根據請求項2所述的等離子體處理設備，其中，該第一訊號的波形為sinwt波形，該第二訊號的波形為-sin2 wt波形。The plasma processing apparatus according to claim 2, wherein the waveform of the first signal is a sinwt waveform, and the waveform of the second signal is a -sin 2 wt waveform. 根據請求項1-3任一項所述的等離子體處理設備，其中，該第一訊號處理器包括： 一類比訊號乘法器，用於將該第一訊號轉換成一第三訊號，該第三訊號對應的函數為該第一函數的n次方的函數；以及 一反相器，用於將該第三訊號轉換成該第二訊號。The plasma processing equipment according to any one of claims 1-3, wherein the first signal processor includes: An analog signal multiplier for converting the first signal into a third signal, and the function corresponding to the third signal is a function of the nth power of the first function; and An inverter is used to convert the third signal into the second signal. 根據請求項1所述的等離子體處理設備，其中，該訊號處理器還包括： 一第二訊號處理器，該第二訊號處理器用於將該第二訊號放大後，饋入到該第一電極結構和該第二電極結構之間。The plasma processing equipment according to claim 1, wherein the signal processor further includes: A second signal processor for amplifying the second signal and feeding it between the first electrode structure and the second electrode structure. 根據請求項5所述的等離子體處理設備，其中，該第二訊號處理器包括： 一功率放大器，用於對該第二訊號進行放大；以及 一匹配器，用於匹配一第一阻抗和一第二阻抗，其中，該第一阻抗為該訊號發生器中的阻抗，該第二阻抗為該訊號發生器至該第二電極結構所在支路上的所有阻抗之和。The plasma processing equipment according to claim 5, wherein the second signal processor includes: A power amplifier for amplifying the second signal; and A matcher for matching a first impedance and a second impedance, wherein the first impedance is the impedance in the signal generator, and the second impedance is the branch from the signal generator to the second electrode structure The sum of all impedances. 一種等離子體處理方法，其中，應用於請求項1至6中任一項所述的等離子體處理設備，該等離子體處理方法包括下列步驟： 將一待處理襯底放置在一等離子體處理腔室內的一第一電極結構上；以及 啟動一訊號發生器和一訊號處理器，利用該訊號處理器將對該訊號發生器產生的一第一訊號進行處理後饋入到該第一電極結構和一第二電極結構之間，並向該等離子體處理腔室內通入製程氣體，以在該第一電極結構和該第二電極結構之間產生等離子體，對該待處理襯底進行處理； 其中，該訊號處理器包括一第一訊號處理器，用於將該第一訊號轉換成一第二訊號，其中，該第二訊號對應的函數為與一第一函數的n次方異號的函數，該第一函數為週期性正弦函數或週期性餘弦函數，其中，n為大於零的偶數。A plasma processing method, which is applied to the plasma processing equipment according to any one of claims 1 to 6, and the plasma processing method includes the following steps: Placing a substrate to be processed on a first electrode structure in a plasma processing chamber; and Start a signal generator and a signal processor, and use the signal processor to process a first signal generated by the signal generator and feed it between the first electrode structure and a second electrode structure, and to A process gas is passed into the plasma processing chamber to generate plasma between the first electrode structure and the second electrode structure to process the substrate to be processed; Wherein, the signal processor includes a first signal processor for converting the first signal into a second signal, wherein the function corresponding to the second signal is a function of the n-th power opposite sign of a first function , The first function is a periodic sine function or a periodic cosine function, where n is an even number greater than zero. 根據請求項7所述的等離子體處理方法，其中，該第一訊號處理器包括：一類比訊號乘法器和一反相器； 利用該訊號處理器將對該訊號發生器產生的該第一訊號進行處理後饋到該第一電極結構和該第二電極結構之間包括下列步驟： 利用該類比訊號乘法器將該第一訊號轉換成一第三訊號輸出給該反相器，該第三訊號對應的函數為該第一函數的n次方的函數；以及 利用該反相器將該第三訊號轉換成該第二訊號輸出。The plasma processing method according to claim 7, wherein the first signal processor includes: an analog signal multiplier and an inverter; Using the signal processor to process the first signal generated by the signal generator and feed it between the first electrode structure and the second electrode structure includes the following steps: Utilizing the analog signal multiplier to convert the first signal into a third signal and output to the inverter, the function corresponding to the third signal is a function of the nth power of the first function; and The inverter is used to convert the third signal into the second signal and output. 根據請求項7所述的等離子體處理方法，其中，該訊號處理器還包括：一第二訊號處理器； 利用該訊號處理器將對該訊號發生器產生的該第一訊號進行處理後饋入到該第一電極結構和該第二電極結構之間還包括下列步驟： 利用該第二訊號處理器將該第二訊號放大後，饋入到該第一電極結構和該第二電極結構之間。The plasma processing method according to claim 7, wherein the signal processor further includes: a second signal processor; Using the signal processor to process the first signal generated by the signal generator and feed it between the first electrode structure and the second electrode structure further includes the following steps: The second signal is amplified by the second signal processor and fed between the first electrode structure and the second electrode structure. 根據請求項9所述的等離子體處理方法，其中，該第二訊號處理器包括：一功率放大器和一匹配器； 利用該第二訊號處理器將該第二訊號放大後，饋入到該第一電極結構和該第二電極結構之間包括下列步驟： 利用該功率放大器對該第二訊號進行放大後輸出給該匹配器；以及 利用該匹配器匹配一第一阻抗和一第二阻抗，其中該第一阻抗為該訊號發生器中的阻抗，該第二阻抗為該訊號發生器至該第二電極結構所在支路上的所有阻抗之和。The plasma processing method according to claim 9, wherein the second signal processor includes: a power amplifier and a matcher; After amplifying the second signal by the second signal processor, feeding it between the first electrode structure and the second electrode structure includes the following steps: The second signal is amplified by the power amplifier and then output to the matcher; and Use the matcher to match a first impedance and a second impedance, where the first impedance is the impedance in the signal generator, and the second impedance is all the impedances from the signal generator to the branch where the second electrode structure is located Sum.
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