TW202425103A - Semiconductor manufacturing device and semiconductor device manufacturing method - Google Patents

Abstract

[Topic] To provide a technology capable of confirming the state of chip peeling during production in a semiconductor manufacturing device. [Solution] A semiconductor manufacturing device comprises a peeling unit disposed below a dicing tape, a camera disposed below the dicing tape and near the peeling unit, and a control device. The control device is configured to peel the dicing tape from at least a portion of the chip by the peeling unit, and to obtain an image by the camera penetrating the dicing tape and photographing the back side of the chip from which the dicing tape has been peeled, and to confirm the state of chip peeling from the dicing tape based on the image.

Description

Semiconductor manufacturing device and semiconductor device manufacturing method

The present disclosure relates to a semiconductor manufacturing apparatus, and is applicable to a die bonder that can perform, for example, die peeling status confirmation.

Semiconductor manufacturing devices such as die bonders are devices that use bonding materials to bond (place and bond) components such as components to substrates or components. Bonding materials are, for example, liquid or film-like resins or solders. Components are, for example, semiconductor chips, MEMS (Micro Electro Mechanical System) and glass chips, etc., or electronic parts. Substrates are, for example, wire frames formed of wiring boards or metal sheets, glass substrates, etc.

For example, in the die bonding process by the die bonder, there is a process of peeling the die separated from the semiconductor wafer (hereinafter referred to as the wafer) from the dicing tape. The dicing tape is held on the wafer ring and carried into the die bonder. In the peeling process, the die is pushed up from the back of the dicing tape by the push-up unit, and the die is peeled one by one from the dicing tape held in the wafer supply unit, and picked up using a suction nozzle provided on a pickup head or a clamp of a bonding head. [Prior art literature] [Patent literature]

[Patent Document 3] Japanese Patent Application Publication No. 2021-158166

[The problem that the invention wants to solve]

In order to stabilize the pickup, it is required to manage the amount of the die peeled off from the dicing tape. For example, in the case where the die is peeled off from the dicing tape by a peeling unit such as a push-up unit, the peeling state of the die from the die dicing tape (die peeling state) is confirmed, and a wafer ring with a dicing tape holding the peeled die is unloaded from a semiconductor manufacturing device. In addition, there is a case where the back side of the die is photographed to confirm the die peeling state.

The subject of this disclosure is to provide a technology that can confirm the state of chip peeling in a semiconductor manufacturing device. Other subjects and novel features can be understood from the description of this manual and the attached drawings. [Means for solving the problem]

If the outline of the representative contents of the present disclosure is briefly described, it is as follows. That is, a semiconductor manufacturing device has a peeling unit disposed below a dicing tape, a camera disposed below the dicing tape and near the peeling unit, and a control device. The control device is configured to peel the dicing tape from at least a portion of the die by the peeling unit, and to obtain an image by the camera penetrating the dicing tape and photographing the back side of the die from which the dicing tape has been peeled, and to confirm the peeling state of the die from the dicing tape based on the image. [Effect of the invention]

According to the present disclosure, the state of die peeling can be confirmed in a semiconductor manufacturing device.

The following is a description of the embodiments and modifications using drawings. However, in the following description, the same components are given the same symbols and repeated descriptions are omitted. In addition, in order to make the description clearer, the width, thickness, shape, etc. of each part are schematically represented in the drawings compared to the actual state. Furthermore, even between multiple drawings, the relationship between the dimensions of each element and the ratio of each element do not necessarily have to be consistent.

The structure of a die bonder as one embodiment of a semiconductor manufacturing device is described using FIGS. 1 to 3. FIG. 1 is a schematic top view showing an example of the structure of a die bonder in an embodiment. FIG. 2 is a schematic diagram showing the schematic structure viewed from the direction of arrow A in FIG. 1. FIG. 3 is a schematic cross-sectional view showing the main parts of the wafer supply unit shown in FIG. 1.

The die bonder 1 generally comprises a wafer supply unit 10, a pickup unit 20, an intermediate platform unit 30, a bonding unit 40, a transport unit 50, a substrate supply unit 60, a substrate unloading unit 70 and a control unit (control device) 80. The Y direction is the front-to-back direction of the die bonder 1, the X direction is the left-to-right direction, and the Z direction is the up-down direction. The wafer supply unit 10 is arranged at the front side of the die bonder 1, and the bonding unit 40 is arranged at the rear side.

The wafer supply unit 10 includes a wafer cassette elevator 11 , a wafer holding table 12 , a peeling unit 13 , a wafer recognition camera 14 , and a downward-looking camera 15 .

The wafer cassette lifter 11 moves a wafer cassette (not shown) storing a plurality of wafer rings WR up and down to a wafer transfer height. The wafer correction chute (not shown) aligns the wafer ring WR supplied from the wafer cassette lifter 11. The wafer lifter (not shown) takes out the wafer ring WR from the wafer cassette and supplies it to the wafer holding table 12, or takes it out from the wafer holding table 12 and stores it in the wafer cassette.

The wafer holding stage 12 includes an expansion ring 121 for holding a wafer ring WR and a support ring 122 for horizontally positioning the dicing tape DT held on the wafer ring WR. The peeling unit 13 and the downward camera 15 are arranged inside the support ring 122.

A wafer W is bonded (pasted) on a dicing tape DT, and the wafer W is divided into a plurality of dies D. The dicing tape DT is transparent to visible light. A thin film adhesive material DF called a die attach film (DAF) is pasted between the wafer W and the dicing tape DT. The adhesive material DF is cured by heating.

The wafer holding table 12 is moved in the XY direction by a driving unit not shown in the figure, so that the picked-up die D is moved to the position of the peeling unit 13. Furthermore, the wafer holding table 12 rotates or XY-moves the wafer ring WR in the XY plane by a driving unit not shown in the figure. The peeling unit 13 is moved in the up and down direction by a driving unit not shown in the figure. The peeling unit 13 peels the die D from the dicing tape DT.

The wafer recognition camera 14 grasps the pick-up position of the die D picked up from the wafer W, or performs surface inspection of the die D. The downward-looking camera 15 confirms the state of die peeling.

The pickup unit 20 has a pickup head 21 and a Y-drive unit 23. A collet 22 is provided at the front end of the pickup head 21 to absorb and hold the peeled grain D. The pickup head 21 picks up the grain D from the wafer supply unit 10 and places it on the intermediate platform 31. The Y-drive unit 23 moves the pickup head 21 in the Y-axis direction. The pickup unit 20 has various drives (not shown) that lift, rotate, and move the pickup head 21 in the X-axis direction.

The intermediate platform section 30 has an intermediate platform 31 on which the die D is placed, and a platform recognition camera 34 for recognizing the die D on the intermediate platform 31. The intermediate platform 31 has suction holes for adsorbing the placed die D. The placed die D is temporarily held on the intermediate platform 31. The intermediate platform 31 is a placement platform on which the die D is placed, and is also a pickup platform on which the die D is picked up.

The bonding section 40 has a bonding head 41, a Y drive section 43, a substrate identification camera 44 and a bonding platform 46. A clamp 42 for adsorbing and holding the die D is provided at the front end of the pickup head 41. The Y drive section 43 moves the bonding head 41 in the Y-axis direction. The substrate identification camera 44 photographs a position identification mark (not shown) of the substrate S to identify the bonding position. Here, a plurality of product areas (hereinafter referred to as package areas P) that become a final package body are formed on the substrate S. The position identification mark is provided on each of the package body areas P. When the die D is placed on the substrate S, the bonding platform 46 is raised to support the substrate S from below. The bonding platform 46 has a suction port (not shown) for vacuum adsorbing the substrate S, which can fix the substrate S. The bonding stage 46 has a heating unit (not shown) for heating the substrate S. The bonding unit 40 has various driving units (not shown) for lifting, rotating, and moving the pickup head 41 in the X direction.

With such a configuration, the bonding head 41 corrects the pickup position or posture according to the imaging data of the stage recognition camera 34, and picks up the die D from the intermediate stage 31. Furthermore, the bonding head 41 performs bonding on the package area P of the substrate S according to the imaging data of the substrate recognition camera 44, or in a form of stacking on the die already bonded on the package area P of the substrate S.

The transport section 50 has a transport claw 51 for grabbing and transporting the substrate S and a transport channel 52 for moving the substrate S. The substrate S is moved in the X direction by using a ball screw (not shown) provided along the transport channel 52 to drive a nut (not shown) provided on the transport claw 51 of the transport channel 52. With such a configuration, the substrate S is moved from the substrate supply section 60 along the transport channel 52 to the bonding position, and after bonding, is moved to the substrate carrying section 70, and the substrate S is delivered to the substrate carrying section 70.

The substrate supply unit 60 takes out the substrate S stored in the transport jig and carried in from the transport jig and supplies it to the transport unit 50. The substrate carry-out unit 70 stores the substrate S carried by the transport unit 50 in the transport jig.

The control unit 80 has a memory device for storing programs (software) for monitoring and controlling the operations of various parts of the die bonder 1 and storing data, a central processing unit (CPU) for executing the programs stored in the memory device, and an input-output device (not shown). The input-output device includes an image capture device (not shown), a motor control device (not shown), and an I/O signal control device (not shown). The image capture device captures image data from the wafer recognition camera 14, the downward-looking camera 15, the stage recognition camera 34, and the substrate recognition camera 44. The motor control device controls the drive unit of the wafer supply unit 10, the drive unit of the pickup unit 20, the drive unit of the bonding unit 40, etc. The I/O signal control device is a signal unit that captures various sensor signals or controls the switch of the lighting device, etc.

A part of the manufacturing process of a semiconductor device using the die bonder 1 (the manufacturing method of the semiconductor device) is described using FIG4. FIG4 is a flow chart showing the manufacturing method of a semiconductor device using the die bonder shown in FIG1. In the following description, the operation of each part constituting the die bonder 1 is controlled by the controller 80.

(Wafer loading process: process S1) The wafer ring WR is supplied to the wafer cassette of the wafer cassette lifter 11. The supplied wafer ring WR is supplied to the wafer holding table 12. In addition, the wafer W is inspected for each die in advance by an inspection device such as a probe, and wafer image data indicating whether the die is good or bad is generated. The wafer image data is stored in the storage device of the control unit 80.

(Substrate loading process: process S2) The transport jig storing the substrate S is supplied to the substrate supply unit 60. In the substrate supply unit 60, the substrate S is taken out from the transport jig and fixed to the transport claw 51.

(Pick-up process: process S3) After process S1, the wafer holding table 12 is moved in such a way that the desired die D can be picked up from the dicing tape DT. The die D is photographed by the wafer recognition camera 14, and the positioning and surface inspection of the die D are performed based on the image data obtained by the photography. By performing image processing on the image data, the offset (X, Y, θ direction) of the die D on the wafer holding table 12 from the die position reference point of the die support is calculated for positioning. In addition, the die position reference point is a specific position of the wafer holding table 12 that is maintained as the initial setting of the device in advance. By performing image processing on the image data, the surface inspection of the die D is performed.

The positioned die D is peeled off from the dicing tape DT by the peeling unit 13 and the pickup head 21. The die D peeled off from the dicing tape DT is sucked and held by the cartridge provided in the pickup head 21, and is transported to the intermediate platform 31 and placed thereon.

The stage recognition camera 34 is used to photograph the die D on the intermediate stage 31. Based on the image data obtained by the photography, the die D is positioned and inspected on the surface. By processing the image data, the offset (in the X, Y, and θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonder is calculated and positioned. In addition, the die position reference point is a specific position of the intermediate stage 31 that is maintained as the initial setting of the device in advance. By processing the image data, the surface of the die D is inspected.

The pick-up head 21 that transported the die D to the intermediate platform 31 returns to the wafer supply unit 10. According to the above sequence, the next die D is peeled off from the dicing tape DT, and according to the same sequence thereafter, the die D is peeled off from the dicing tape DT one by one.

(Joining process: process S4) The substrate S is transported to the joining platform 46 by the transport unit 50. The substrate S placed on the joining platform 46 is photographed by the substrate recognition camera 44, and image data is obtained by photography. The image data is processed by image processing to calculate the offset (X, Y, θ direction) of the substrate S from the substrate position reference point of the die bonder 1. In addition, the substrate position reference point is maintained by presetting the specific position of the joining unit 40 as the initial setting of the device.

The die D is adsorbed by the clamp 42 by correcting the adsorption position of the bonding head 41 based on the offset of the die D on the intermediate platform 31 calculated in process S3. The die D is bonded to a specific location of the substrate S supported on the bonding platform 46 by the bonding head 41 that adsorbs the die D from the intermediate platform 31. Here, the specific location of the substrate S is the package area P of the substrate S, or the area where all components are mounted and components are bonded in other forms, or the bonding area of stacked components. The die D bonded to the substrate S is photographed by the substrate recognition camera 44, and based on the image data obtained by the photography, it is checked whether the die D is bonded to the desired location.

The bonding head 41 that has bonded the die D to the substrate S returns to the intermediate platform 31. According to the above sequence, the next die D is picked up from the intermediate platform 31 and bonded to the substrate S. This is repeated, and the die D is bonded to all the package regions P of the substrate S.

(Substrate unloading process: process S5) The substrate S to which the die D is bonded is transported to the substrate unloading unit 70. In the substrate unloading unit 70, the substrate S is taken out from the transport claw 51 and stored in the transport jig. The transport jig storing the substrate S is unloaded from the die bonder 1.

As described above, the die D is mounted on the substrate S and is carried out from the die bonder 1. Afterwards, the transport jig storing the substrate S with the die D mounted thereon is transported to the wire bonding process, and the electrode of the die D is electrically connected to the electrode of the substrate S via the Au wire or the like. Furthermore, the substrate S is transported to the molding process, and the die D and the Au wire are sealed with a molding resin (not shown), thereby completing the semiconductor package.

In the case of stacking bonding, following the wire bonding process, the substrate S on which the die D is mounted is carried and stored in a transfer jig and is moved into a die holder to stack the die D on the die D mounted on the substrate S. Furthermore, after being moved out of the die bonder, in the wire bonding process, the die D is electrically connected to the electrode of the substrate S via the Au wire. After the die D above the second section is peeled off from the dicing tape DT in the above method, it is transported to the bonding portion and stacked on the die D. After the above process is repeated a specific number of times, the substrate S is transported to the molding process, and a plurality of die D and Au wires are sealed with a molding resin (not shown), thereby completing the stacking seal.

The structure and operation of the peeling unit 13 are explained using Figures 5(a) to 5(c). Figure 5(a) is a schematic top view of the peeling unit shown in Figure 3. Figure 5(b) is a cross-sectional view of an important part of the peeling unit shown in Figure 5(a) in a state connected to the cutting tape. Figure 5(c) is a cross-sectional view of an important part of the peeling unit shown in Figure 5(a) in a state where the block is pushed up.

As shown in FIG. 5( a ), the stripping unit 13 has a block portion 131 having a plurality of blocks 131 a to 131 d, and a hemispherical head 132 having a plurality of suction holes (not shown) for adsorbing the dicing tape DT. The four blocks 131 a to 131 d can move up and down independently by the control unit 80. The top view shape of the concentric quadrilateral blocks 131 a to 131 d is configured to match the shape of the die D.

The picking action is to position the target die D on the cutting tape DT on the stripping unit 13, starting from the positioning of the collet 22 of the pick-up head 21 on the die D. As shown in FIG5(b), once the positioning is completed, vacuum is drawn through the suction holes and gaps (not shown) of the stripping unit 13, and the cutting tape DT is adsorbed on the stripping unit 13. At this time, the top of the blocks 131a to 131d is at the same height as the top of the hemispherical head 132 (initial position). In this state, vacuum is supplied from the vacuum supply source, and the collet 22 descends toward the device surface (top) of the die D while drawing vacuum, and lands on the top of the die D.

Afterwards, blocks 131a to 131d are pushed up at the same time, and the peeling unit 13 is set to the first state (PU1). The first state (PU1) is a state in which blocks 131a to 131d are in contact with the cutting tape DT. Afterwards, blocks 131a to 131d are further pushed up at the same time, and the peeling unit 13 is set to the second state (PU2). The second state (PU2) is a state in which blocks 131a to 131d are in contact with the cutting tape DT. Afterwards, blocks 131c and 131d are further pushed up at the same time, and the peeling unit 13 is set to the third state (PU3). The third state (PU3) is a state in which blocks 131c and 131d are in contact with the cutting tape DT. Then, as shown in FIG. 5( c ), the block 131 d is pushed up and the block portion 131 is set to a pyramid shape, and the peeling unit 13 is set to the fourth state (PU4). The fourth state (PU4) is a state where the block 131 d is in contact with the cutting tape DT. In this disclosure, this action is referred to as the MS (Multi Step) action.

In addition to the above-mentioned MS action, the peeling unit 13 can also perform the following actions. Blocks 131a to 131d are pushed up at the same time, and the peeling unit 13 is set to the first state (PU1). The first state (PU1) is a state in which blocks 131a to 131d are in contact with the cutting tape DT. Thereafter, block 131a descends, and the peeling unit 13 is set to the second state (PU2). The second state (PU2) is a state in which blocks 131b to 131d are in contact with the cutting tape DT. Thereafter, block 131b descends, and the peeling unit 13 is set to the third state (PU3). The third state (PU3) is a state in which blocks 131c and 131d are in contact with the cutting tape DT. Afterwards, the block 131c is lowered and the block portion 131 is set to a pyramid shape, and the stripping unit 13 is set to the fourth state (PU4). The fourth state (PU4) is a state where the block 131d abuts against the cutting tape DT. In this disclosure, this action is called RMS (Reverse Multi Step) action.

During the MS operation or the RMS operation, the die D is held in the state of being clamped by the whole or part of the barrel chuck 22 and the block portion 131. The block portion 131 is formed into a pyramid shape or the like, and by providing a step difference between a plurality of blocks, the dicing tape DT is peeled off from the die D by the tension of the dicing tape DT. In the state shown in FIG. 5( c ), the dicing tape DT is bonded to the die D only at the place where the block 131 d contacts the dicing tape DT.

Thereafter, the collet 22 is pushed upward and, at the same time, the block 131d is pulled down, so that the die D is completely separated from the dicing tape DT and picked up.

The first state (PU1), the second state (PU3) and the fourth state (PU4) in the MS action and the RMS action are performed by the multiple step actions of the stripping unit 13. According to the timing chart recipe (pick-up recipe), the control unit 80 drives the motors of each block 131a to 131d respectively. Here, in the timing chart recipe, the action of each block 131a to 131d is set for each block and each step by the time of the step, the speed of the rise or fall of the block, the height (position) of the block, etc. In this way, the stripping unit 13 performs the step action.

The confirmation of the chip peeling state of the wafer supply unit is explained using FIG. 2, FIG. 5(b), FIG. 5(c) and FIG. 6. FIG. 6 is a diagram showing the main structure of the wafer supply unit shown in FIG. 3 and an example of a picture showing the chip peeling state. The x-axis and y-axis shown in the picture IM in FIG. 6 correspond to the X-axis and Y-axis of the chip bonder 1.

As shown in FIG. 2 , the downward camera 15 is fixed and arranged in the movable range of the wafer holding table 12 beside the peeling unit 13 so as not to interfere with the peeling unit 13. The downward camera 15 is arranged to face upward so as to photograph the upper part thereof, and its optical axis is along the Z direction. The photography is preferably performed using oblique light illumination in which the illumination light is irradiated from a direction inclined relative to the optical axis of the downward camera 15.

In this embodiment, the die peeling state is confirmed when the conditions of the device are set before the die bonder 1 is continuously operated (before production starts). Alternatively, during the continuous operation of the die bonder 1 (during production), for example, when a new wafer ring WR is loaded on the wafer holding table 12, the die peeling state is confirmed. In addition, during the continuous operation, even between the above-mentioned process S1 and process S3, the die peeling state may be confirmed for each loading of the wafer ring WR, and even for multiple loadings of the wafer ring WR, it may be performed at a ratio of once. The multiple times may be a specific number of times, or an arbitrary number of times. Furthermore, in the continuous operation, it is preferable to use the die that is set as defective by the wafer mapping data to confirm the die peeling state. In this case, it is preferable to use the die that is not located at the end of the wafer to confirm the die peeling state. The sequence is described below.

First, the control unit 80 sets the peeling unit 13 to the fourth state (PU4) through the above-mentioned picking-up action, for example, as shown in FIG. 5(c), pushes up the block portion 131, and partially peels the dicing tape DT from the die D.

Next, the control unit 80 returns the peeling unit 13 from the fourth state (U4) shown in FIG. 5(c) to the initial state shown in FIG. 5(b).

Next, as shown in Fig. 6, the control unit 80 causes the stripping unit 13 to retreat downward. Furthermore, the control unit 80 causes the wafer holding stage 12 to move upward, and places the die (stripped die Dp) partially stripped from the dicing tape DT above the downward camera 15. In this case, the collet 22 of the pickup head 21 is also retracted upward.

Next, the control unit 80 uses the downward camera 15 to capture the peeled die Dp through the dicing tape DT to obtain an image IM. The image IM includes the peeling area PLD where the peeled die Dp is peeled from the dicing tape DT and the peeling marks of the unpeeled area UPL where the peeled die Dp is not peeled.

The above sequence enables confirmation of the die peeling state without receiving and delivering the wafer. Wafer receiving and delivering is to carry out or carry in the wafer ring WR holding the dicing tape DT having the peeled die Dp and the like from the die bonder 1.

Next, the control unit 80 processes the image IM obtained by the downward camera 15 to separate the peeled area PLD and the unpeeled area UPL to confirm the die peeling state. For example, the control unit 80 confirms the die peeling state by the positional relationship between the four outer end portions OP of the outermost block in the block portion 131 that abuts the dicing tape DT and the unpeeled area UPL.

By making the peeling unit 13 into the second state (PU2), the die peeling state can be confirmed by the positional relationship between the four outer ends OP of the block 131b and the unpeeled area UPL. By making the peeling unit 13 into the third state (PU3), the die peeling state can be confirmed by the positional relationship between the four outer ends of the block 131c and the unpeeled area UPL. By making the peeling unit 13 into the fourth state (PU4), the die peeling state can be confirmed by the positional relationship between the four outer ends of the block 131d and the unpeeled area UPL.

As shown in Fig. 6, the actual image IM is not an image with a high contrast between the peeled area PLD and the unpeeled area UPL, but a light image with a low contrast. Therefore, in the confirmation of the grain peeling state, the control unit 80 performs a smoothing process on the image IM, and performs an edge detection process in a band-shaped area on the image with noise removed by the smoothing process, so as to separate the peeled area PLD and the unpeeled area UPL and detect the peeling mark.

As the smoothing process, one or more smoothing filters are applied. For example, when using a 5×5 filter or a 7×7 filter, it is sufficient to apply the smoothing filter once, but when using a 3×3 filter, it is better to apply the smoothing filter multiple times.

Edge detection in a strip area (strip edge detection) is not performed on one pixel, but on multiple pixels. Since edge detection is usually derived from the change in density on a straight line, the inspection range is one pixel. However, in order to remove noise, when the edge length is quite long, there are cases where the inspection range is set to multiple pixels and averaged. Therefore, it is effective when the target image is a rectangle. For each side, for example, the edge of 10 pixels is detected, and each detected edge is extended to set a rectangular area. In addition, the shape of the unpeeled area UPL is a rectangle that imitates the shape of the block when viewed from above.

After the control unit 80 confirms the state of the grain peeling, it can use the image IM to make an appropriate judgment on the picking recipe or to correct or warn the picking recipe itself. This is explained using Figures 7(a) and 7(b). Figure 7(a) is a diagram showing an image of a peeling unit in the second state and a situation where the grain peeling is not sufficient. Figure 7(b) is a diagram showing an image of a peeling unit in the second state and a situation where the grain peeling is sufficient. In Figures 7(a) and 7(b), block 131a is located between the upper surface of the hemispherical head 132 and the upper surfaces of blocks 131b to 131d.

As shown in FIG. 7( b ), the control unit 80 determines that the peeling is complete (the grain peeling is sufficient) when the boundary between the peeling area PLD and the unpeeling area UPL is equal to or smaller than the periphery of the block formed by the four outer end portions OP of the block abutting against the dicing tape DT.

As shown in FIG7(a), the control unit 80 determines that the die peeling is insufficient when the boundary between the peeling area PLD and the unpeeled area UPL is larger than the block periphery. If the die peeling is insufficient, the pickup recipe may be corrected as described below.

In the mobile suit animation, the height of the block before shooting and the pickup timer time have been increased.

In the RMS operation, the block height of the whole block in the step of setting the first state (PU1) is increased. Or, the block height of the block before the descent of the block before the image is taken (in FIG. 7 (a)), the block height of the block 131a) is increased. Or, the time of the timer is increased. Or, a combination of these is also possible.

In RMS motion, the recipe is modified based on the priority of high speed and low stress. In case of giving priority to high speed, the push-up height is increased, or the time of the pick-up timer is reduced. Or, both are implemented. In case of giving priority to low stress, the push-up height is reduced, or the time of the pick-up timer is increased. Or, both are implemented.

When the peeled area PLD (unpeeled area UPL) is non-uniform in the x, y, and θ directions, the control unit 80 can correct the position of the mechanism from the grain peeling state. This is explained using Figures 8(a) to 8(d). Figure 8(a) is a picture showing a situation where grain peeling is non-uniform. Figure 8(b) is a picture showing a situation where the unpeeled area is deviated in the x direction. Figure 8(c) is a picture showing a situation where the unpeeled area is deviated in the y direction. Figure 8(d) is a picture showing a situation where the unpeeled area is deviated in the θ direction.

As shown in FIG8(a), when the position of the unpeeled area UPL is uneven relative to the block periphery OP (uneven grain peeling), the control unit 80 makes the height of the block where the area surrounded by the ellipse and the dicing tape DT abut is lower than the setting. That is, it is judged that the block portion 131 is inclined upward. In this way, the normality of the block flatness can be diagnosed. In the case where the control unit 80 judges that it is the block portion 131, it is also possible to issue a warning.

When the size of the boundary portion of the peeled area PLD and the unpeeled area UPL is equal to the block periphery, the control unit 80 can confirm the positional offset of the block portion 131 with respect to the grain D. When the unpeeled area UPL is confirmed to be offset in the (+) direction of the y-axis relative to the original area periphery OPa as shown in FIG8(b), the control unit 80 determines that the block portion 131 is offset in the (+) direction of the Y-axis. When the unpeeled area UPL is confirmed to be offset in the (-) direction of the x-axis relative to the original area periphery OPa as shown in FIG8(c), the control unit 80 determines that the block portion 131 is offset in the (+) direction of the X-axis. When the control unit 80 confirms that the unpeeled area UPL is offset in the (+) direction of the θ axis relative to the original area periphery OPa as shown in FIG8(d), it determines that the block portion 131 is offset in the (-) direction of the θ axis. The control unit 80 calculates the position offsets and corrects the position relationship between the wafer holding table 12 and the peeling unit 13 based on the calculated position offsets. For example, the position or posture of the wafer holding table 12 may be corrected, or the position or posture of the peeling unit 13 may be corrected.

According to the implementation mode, the die peeling state can be confirmed in a semiconductor manufacturing device such as a die bonder, and thus, the quality of the pick-up recipe or the operation failure of the peeling unit can be judged based on the die peeling state.

Furthermore, by using the implementation mode, it is possible to confirm the die peeling during each stage of the multi-stage push-up caused by multiple blocks.

Furthermore, by optimizing the peeling conditions of the pickup formula during implementation, it is possible to prevent cracks or gaps in the die during pickup. This allows for the pickup of thinner die. For example, in order to promote high-density mounting of semiconductor devices, a stacked package that three-dimensionally mounts multiple die on a wiring substrate has become practical. When assembling such a stacked package, so-called thin die that has been processed and thinned to a thickness of tens of μm is used. It is possible to pick up such thin die.

[Variations] Below, several representative variations of the implementation are exemplified. In the description of the following variations, for parts having the same structure and function as those described in the above-mentioned implementation, the same symbols as those in the above-mentioned implementation are used. Moreover, the description of such parts is set to be able to appropriately quote the description in the above-mentioned implementation within the scope of technical non-contradiction. Furthermore, within the scope of technical non-contradiction, one part of the above-mentioned implementation and all or part of the multiple variations can be appropriately and complexly applied.

(First variant) Fig. 9 is a diagram showing the main structure of the wafer supply unit in the first variant.

In the embodiment, an example of fixing the downward camera 15 is described. In contrast, in a second variant, the downward camera 15 is configured to be movable between a position above the peeling unit 13 and a position not interfering with the peeling unit 13. The control unit 80 causes the peeling unit 13 to retreat to a position below the downward camera 15 so as not to interfere with the downward camera 15, and moves the downward camera 15 itself to a position for peeling the grain Dp. The photography by the downward camera 15 is the same as that in the embodiment, and preferably, oblique light illumination is used to illuminate the illumination light from a direction inclined relative to the optical axis of the downward camera 15. Since the control unit 80 does not need to move the wafer holding table 12 to move the peeled die Dp, it is not necessary to retract the collet 22 of the pickup head 21. Accordingly, since the photography can be performed while the peeled die Dp is adsorbed by the collet 22, the peeled die Dp can be prevented from being attached to the dicing tape DT during the photography.

(Second variant) Figure 10(a) is a top view showing the main structure of the wafer supply unit in the second variant. Figure 10(b) is a cross-sectional view showing the main structure of the wafer supply unit in the second variant. In Figure 10(a), the dicing tape DT and the peeled die Dp are excluded.

The semicircular spherical head 132 of the peeling unit 13 in the second variant is made of a transparent material. Moreover, the optical axis of the downward camera 15 is tilted with respect to the Z direction, and the downward camera 15 is set at a position to photograph the back of the peeled grain Dp from obliquely below. One downward camera 15 is arranged facing one side of the peeled grain Dp. In addition, two downward cameras 15 may be arranged facing two adjacent sides of the peeled grain Dp. Furthermore, four downward cameras 15 may be arranged facing the four sides of the peeled grain Dp.

By such a configuration, even if the stripping unit 13 is not retracted downward or the stripped die Dp is not released from the cartridge 22, the state of the die stripping of the die Dp can be confirmed by pushing back on the block portion 131. Thus, the state of the die stripping can be confirmed even during the picking operation in production. Furthermore, as in the first variant, photography can be performed while the stripped die Dp is being adsorbed by the cartridge 22, so that the stripped die Dp can be prevented from being attached to the dicing tape DT during photography.

(Third variant) Figure 11 is a diagram showing the main structure of the wafer supply unit in the third variant.

The hemispherical head 132 of the peeling unit 13 in the third variant is made of a transparent material. The downward-looking camera 15 is also configured in the same manner as in the embodiment. Furthermore, an optical reflection mechanism 16a such as a prism or a reflector is disposed above the downward-looking camera 15 and below the cutting tape DT. The optical reflection mechanism 16a has a reflection surface of approximately 45 degrees relative to the optical axis of the downward-looking camera 15. Furthermore, the optical reflection mechanism 16b is disposed in the hemispherical head 132. The optical reflection mechanism 16b has an angle of less than 45 degrees relative to the upper surface of the hemispherical head 132. The downward-looking camera 15 is configured to face one side of the peeling grain Dp.

In addition, two downward-looking cameras 15 may be arranged facing two sides adjacent to the peeled grain Dp. Two sets of optical reflection mechanisms 16a and 16b are provided for the two downward-looking cameras 15. Furthermore, four downward-looking cameras 15 may be arranged facing the four sides of the peeled grain Dp. Four sets of optical reflection mechanisms 16a and 16b are provided for the four downward-looking cameras 15.

By such a configuration, even if the stripping unit 13 is not retracted downward or the stripped die Dp is not released from the cartridge 22, the state of the die stripping of the die Dp can be confirmed by pushing back on the block portion 131. Thus, the state of the die stripping can be confirmed even during the picking operation in production. Furthermore, as in the first variant, photography can be performed while the stripped die Dp is being adsorbed by the cartridge 22, so that the stripped die Dp can be prevented from being attached to the dicing tape DT during photography.

Although the invention created by the inventors is specifically described above based on the implementation forms and examples, the present disclosure is not limited to the above-mentioned implementation forms and examples, and various modifications can of course be made.

For example, in the embodiment, although the example in which the number of blocks is four is described, the number of blocks may be three or less or five or more depending on the grain size.

Furthermore, in the embodiment, although the multiple blocks of the peeling unit are described as being in a concentric angle shape, they may also be in a concentric circular shape or a concentric elliptical shape, or they may be in a structure in which the quadrilateral blocks are arranged in parallel.

Furthermore, in the embodiment, although the example of peeling off by pushing up a plurality of blocks of the peeling unit is described, peeling off by sliding the blocks etc. is also possible.

Furthermore, in the embodiment, although the example using the die attach film is described, it is also possible to provide a pre-formed portion on the substrate where the adhesive is applied without using the die attach film.

Furthermore, in the embodiment, a die bonder is described that picks up a die from a wafer supply unit with a pick-up head and places it on an intermediate platform, and bonds the die placed on the intermediate platform to a substrate with a bonding head. However, the present invention is not limited thereto, and can also be applied to a die bonding device that picks up a die from a die supply unit.

For example, the present invention can also be applied to a die bonder that has no intermediate platform and pick-up head and uses a bonding head to bond a die from a die supply unit to a substrate.

Furthermore, the invention can be applied to a flip chip bonder without an intermediate platform, which picks up a die from a wafer supply unit, rotates a die pick-up head upward to transfer the die to a bonding head, and then bonds the bonding head to a substrate.

In the embodiment, although a die bonder is used as an example for explanation, the present invention can also be applied to a semiconductor manufacturing device that places picked-up dies on a tray.

1: Die bonder (semiconductor manufacturing equipment) 12: Wafer holding table 13: Peeling unit 15: Downward-looking camera (camera) 80: Control unit (control device) D: Die Dp: Peeled die W: Wafer WR: Wafer ring

[FIG. 1] is a schematic top view showing an example of the structure of a die bonder in an implementation form. [FIG. 2] is a diagram showing the schematic structure viewed from the direction of arrow A in FIG. 1. [FIG. 3] is a schematic cross-sectional view showing the main parts of the wafer supply unit shown in FIG. 1. [FIG. 4] is a flow chart showing a method for manufacturing a semiconductor device of the die bonder shown in FIG. 1. [FIG. 5(a)] is a schematic top view of the peeling unit shown in FIG. 3. [FIG. 5(b)] is a cross-sectional view of an important part of the peeling unit shown in FIG. 5(a) in a state of being connected to a dicing tape. [FIG. 5(c)] is a cross-sectional view of an important part of the peeling unit shown in FIG. 5(a) in a state where a block is pushed up. [Fig. 6] is a diagram showing the main part structure and peeling state of the wafer supply unit shown in Fig. 3. [Fig. 7(a)] is a diagram showing a peeling unit in the second state and a picture showing a situation where the grain peeling is insufficient. [Fig. 7(b)] is a diagram showing a picture showing a peeling unit in the second state and a situation where the grain peeling is sufficient. [Fig. 8(a)] is a diagram showing a picture showing a situation where the grain peeling is uneven. [Fig. 8(b)] is a diagram showing a picture showing a situation where the unpeeled area is deviated in the x direction. [Fig. 8(c)] is a diagram showing a situation where the unpeeled area is deviated in the y direction. [Figure 8(d)] is a diagram showing an image of a situation where the unpeeled area is deviated in the θ direction. [Figure 9] is a diagram showing the main structure of the wafer supply unit in the first variant. [Figure 10(a)] is a top view showing the main structure of the wafer supply unit in the second variant. [Figure 10(b)] is a cross-sectional view showing the main structure of the wafer supply unit in the second variant. [Figure 11] is a diagram showing the main structure of the wafer supply unit in the third variant.

10: Wafer supply department

13: Stripping unit

15: Downward-looking camera (camera)

131: Block

131a~131d: Block

132: Hemispherical head

80: Control unit (control device)

D: Grain

DT: cutting tape

Dp: peeling grain

IM: Portrait

PLD: peeling zone

OP: Outer end

UPL: Unpeeled Area

Claims (16)

A semiconductor manufacturing device comprises: A wafer holding table that holds a wafer ring, and the wafer ring holds a dicing tape to which dies separated from a wafer are adhered; A peeling unit that is disposed below the dicing tape; A camera that is disposed below the dicing tape held on the wafer holding table and near the peeling unit; and The control device is configured to peel the dicing tape from at least a portion of the die during production by the peeling unit, and to obtain an image by the camera penetrating the dicing tape to photograph the back of the die from which the dicing tape has been peeled, and to confirm the peeling state of the die from the dicing tape based on the image. A semiconductor manufacturing device as claimed in claim 1, wherein the control device is configured to detect peeling marks on the image by smoothing and edge detection in a strip area. A semiconductor manufacturing device as claimed in claim 1, wherein the control device is configured to confirm the peeling state of the defective die from the dicing tape based on the wafer mapping data. A semiconductor manufacturing device as claimed in claim 2, wherein the control device is configured to correct the positional relationship between the wafer holding table and the peeling unit according to the peeling mark. A semiconductor manufacturing device as claimed in claim 2, wherein the control device is configured to issue a warning or set or modify the operating conditions of the peeling unit based on the peeling mark. A semiconductor manufacturing device as claimed in claim 2, wherein there is further provided an illumination device for irradiating illumination light at a specific angle relative to the optical axis of the camera. A semiconductor manufacturing device as claimed in claim 4 or 5, wherein the camera is arranged and fixed next to the peeling unit. A semiconductor manufacturing device as claimed in claim 7, wherein the control device is configured to move the die to above the camera, and the camera is used to photograph the die. A semiconductor manufacturing device as claimed in claim 8, wherein the peeling unit has a plurality of blocks for pushing up the die through the dicing tape, the control device is configured to operate the peeling unit in such a manner that the plurality of blocks in contact with the dicing tape are separated from the dicing tape from the die in sequence from the outside after all the plurality of blocks are pushed up, the peeling unit is lowered after at least one of the plurality of blocks is separated from the dicing tape, and the die is moved above the camera by the wafer holding table. A semiconductor manufacturing device as claimed in claim 4 or 5, wherein the control device is configured to lower the peeling unit and simultaneously move the camera to below the crystal grain, and photograph the crystal grain by the camera. A semiconductor manufacturing device as claimed in claim 10, wherein the peeling unit has a plurality of blocks that push up the die through the dicing tape, the control device is configured to: after all the plurality of blocks are pushed up, the plurality of blocks that abut against the dicing tape are sequentially separated from the dicing tape from the outside to peel the dicing tape from the die, the peeling unit is operated, after at least one of the plurality of blocks is separated from the dicing tape, the peeling unit is lowered, and the camera is moved below the die. A semiconductor manufacturing device as claimed in claim 1, wherein the peeling unit has a semi-spherical head formed of a transparent material and in contact with the dicing tape, the camera is disposed at a position tilted from the top and bottom to photograph the back of the die, and the control device is configured to photograph the back of the die from which the dicing tape is peeled by penetrating the semi-spherical head and the dicing tape while maintaining the peeling unit in contact with the dicing tape. A semiconductor manufacturing device as claimed in claim 1, wherein a first optical reflection mechanism is further provided above the camera, the peeling unit is provided with a semicircular spherical head formed by a transparent material and in contact with the dicing tape, and a second optical reflection mechanism is provided in the semicircular spherical head, and the control device is configured to penetrate the dicing tape and photograph the back side of the die from which the dicing tape is peeled off by the camera, the first optical reflection mechanism and the second optical reflection mechanism while maintaining the state in which the peeling unit is in contact with the dicing tape. A semiconductor manufacturing device comprises: a wafer holding table for holding a wafer ring, and the wafer ring for holding a dicing tape to which a die separated from a wafer is adhered; a peeling unit, which is arranged below the dicing tape; a camera, which is arranged below the dicing tape held on the wafer holding table and near the peeling unit; and a head, which has a collet for adsorbing the die; and The control device is configured to peel the dicing tape from at least a portion of the die by the peeling unit, and to obtain an image by the camera through the dicing tape to photograph the back of the die from which the dicing tape has been peeled while the die is being adsorbed by the clip, and to confirm the peeling state of the die from the dicing tape based on the image. A method for manufacturing a semiconductor device, comprising: A loading process, which is to load a wafer ring into a semiconductor manufacturing device, wherein the semiconductor manufacturing device is equipped with: a wafer holding table, which holds the wafer ring, and the wafer ring holds a dicing tape to which the dies separated from the wafer are adhered; a peeling unit, which is arranged below the dicing tape; and a peeling unit, which is arranged below the dicing tape; and a camera, which is arranged below the dicing tape; The peeling confirmation process is to peel the dicing tape from at least a portion of the die by the peeling unit, and to obtain an image by the camera penetrating the dicing tape to photograph the back of the die from which the dicing tape has been peeled, and to confirm the peeling state of the die from the dicing tape based on the image; The picking process is to pick up the die held by the wafer ring; and The bonding process is to bond the picked-up die to a substrate or a die that has been bonded to a substrate. A method for manufacturing a semiconductor device as claimed in claim 15, wherein the peeling confirmation process is to confirm the peeling state of the defective die from the dicing tape based on the wafer mapping data.

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