TW278207B - Method and apparatus for deposition of material on a semiconductor wafer - Google Patents
Method and apparatus for deposition of material on a semiconductor waferInfo
- Publication number
- TW278207B TW278207B TW84107533A TW84107533A TW278207B TW 278207 B TW278207 B TW 278207B TW 84107533 A TW84107533 A TW 84107533A TW 84107533 A TW84107533 A TW 84107533A TW 278207 B TW278207 B TW 278207B
- Authority
- TW
- Taiwan
- Prior art keywords
- deposition
- nozzles
- mass flow
- during
- semiconductor wafer
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title abstract 4
- 239000000463 material Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 235000012431 wafers Nutrition 0.000 abstract 4
- 239000007789 gas Substances 0.000 abstract 2
- 239000012159 carrier gas Substances 0.000 abstract 1
- 239000002131 composite material Substances 0.000 abstract 1
Abstract
A method and apparatus for deposition of material on a semiconductor wafer (W) which produces a high level of thickness uniformity on each wafer and among the several wafers processed at the same time in a barrel reactor (10). The mass flow rates ofreactant vapor and its carrier gas from two nozzles (20,21) into the reaction chamber of the barrel reactor are purposely unbalanced. A first of the nozzles (20) emits gas at a greater mass flow rate than a second of the nozzles (21) during a first half of the deposition cycle. The second nozzle emits gas at a greater mass flow rate than the first nozzle during a second half of the deposition cycle. The composite of the layers deposited on the wafers during each half cycle produces a layer having a uniform thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW84107533A TW278207B (en) | 1995-07-20 | 1995-07-20 | Method and apparatus for deposition of material on a semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW84107533A TW278207B (en) | 1995-07-20 | 1995-07-20 | Method and apparatus for deposition of material on a semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW278207B true TW278207B (en) | 1996-06-11 |
Family
ID=51397441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW84107533A TW278207B (en) | 1995-07-20 | 1995-07-20 | Method and apparatus for deposition of material on a semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW278207B (en) |
-
1995
- 1995-07-20 TW TW84107533A patent/TW278207B/en active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100329515B1 (en) | CD deposition method | |
| EP1560252B1 (en) | Deposition apparatus | |
| US4513021A (en) | Plasma reactor with reduced chamber wall deposition | |
| US20050229848A1 (en) | Thin-film deposition apparatus | |
| JP2760717B2 (en) | Method for manufacturing semiconductor device | |
| MY115858A (en) | Method and apparatus for purging barrel reactors | |
| US20050252447A1 (en) | Gas blocker plate for improved deposition | |
| TW363086B (en) | A CVD apparatus and CVD method | |
| TW347416B (en) | Post treatment method for in-situ cleaning | |
| WO1997003223A1 (en) | Gas distribution apparatus | |
| KR20010034921A (en) | Substrate support member with a purge gas channel and pumping system | |
| EP0878823A3 (en) | Plasma-enhanced chemical vapor deposition apparatus and method M | |
| US20050281951A1 (en) | Dielectric barrier discharge method for depositing film on substrates | |
| KR20050057618A (en) | Atomic layer deposition methods and atomic layer deposition tool | |
| JPH02234419A (en) | Plasma electrode | |
| KR20180068244A (en) | Substrate deposition equipment and substrate deposition method using the same | |
| JPH03255618A (en) | Vertical type cvd device | |
| TW278207B (en) | Method and apparatus for deposition of material on a semiconductor wafer | |
| JPH04297030A (en) | Chemical vapor deposition device | |
| KR100697267B1 (en) | Chemical Vapor Deposition Equipment | |
| KR100818390B1 (en) | Showerhead Structure of Chemical Vapor Deposition Equipment and Gas Spraying Method Using the Showerhead | |
| JPH02184022A (en) | Cvd electrode | |
| US20250034704A1 (en) | Substrate processing apparatus and substrate processing method | |
| JPH04320025A (en) | Chemical vapor growth apparatus | |
| KR100284630B1 (en) | Method of manufacturing semiconductor device by chemical vapor deposition |