A7 經濟部中央標準局員工消費合作社印裝 ^04825_ 五、發明説明（1 ) <發明背景> 本發明係關於高速熱處理裝置。 於半導體晶圓或玻璃基板等表面上，形成擴散層，矽 氧化膜或矽氮化膜時，會使用各種之熱處理裝置。例如， 在半導體裝置之製造工程中，常常使用CVD裝置，氧化 膜形成裝置，熱擴散處理裝置等。 例如在日本特開平3 — 8 2 0 1 6號公報中，記載著 關於將多數之晶圓進行整批處理之縱型熱處理裝置之技術 。使用這種裝置對晶圚進行不純物擴散處理時，要關閉縱 型熱處理爐之供給口及排氣口之閘門，將晶圓與船形容器 —起放入處理管內。其次，將處理管內以加熱器加熱至處 理溫度，然後再將處理氣體供給至處理管內，則處理氣體 對晶圓產生作用，於是不純物元素擴散至晶画之中。 最近，隨著稹體電路之高速化，高集稹化等，而漸漸 有使晶圓表W表面之擴散深度愈來愈淺之傾向。爲了控制 較淺之擴散深度，必須以短時間使晶圓上昇至一定溫度以 上（例如1 0 0 0 °C )，同時藉由強制冷卻來控制一定的 溫度傾率，即控制設定溫度（例如5 0 0 °C )之保持時間 及溫度下降時間。因此，目前都是在縱型熱處理爐的供給 口或排氣口裝設風扇，強制地將冷卻空氣導入間隙內。 但是，使用風扇強制地加以冷卻’則晶圓之溫度與加 熱器之溫度（具體地說是設於加熱器之熱電偶之溫度）的 溫度差會變大，因此要等到晶圓與加熱器成爲同溫度（ 2 5 °C )需要很長的時間（2 0分）。所以’如圖1所示 4 - (請先閱讀背面之注意事項再填寫本頁)A7 Printed by the Employees Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs ^ 04825_ V. Description of the invention (1) < Background of the invention > The present invention relates to a high-speed heat treatment device. When forming a diffusion layer, silicon oxide film or silicon nitride film on the surface of a semiconductor wafer or glass substrate, various heat treatment devices are used. For example, in the manufacturing process of semiconductor devices, CVD devices, oxide film forming devices, thermal diffusion processing devices, etc. are often used. For example, Japanese Patent Laid-Open No. 3-8 2 016 discloses the technology of a vertical heat treatment apparatus that processes a large number of wafers in batches. When using this device to diffuse impurities in the crystal, close the gates of the supply port and exhaust port of the vertical heat treatment furnace, and put the wafer together with the boat-shaped container into the processing tube. Secondly, the heater in the processing tube is heated to the processing temperature, and then the processing gas is supplied to the processing tube, the processing gas acts on the wafer, and the impurity elements diffuse into the crystal picture. Recently, with the increase in the speed of the bulk circuit, the increase in the concentration of the grain, etc., there has been a tendency to gradually make the diffusion depth of the surface of the wafer surface W shallower and shallower. In order to control the shallow diffusion depth, the wafer must be raised above a certain temperature in a short time (for example, 100 ° C), and a certain temperature inclination is controlled by forced cooling, that is, the set temperature (for example, 5) 0 0 ° C) holding time and temperature falling time. Therefore, at present, fans are installed at the supply port or exhaust port of the vertical heat treatment furnace to forcibly introduce cooling air into the gap. However, if the fan is forcibly cooled, the temperature difference between the temperature of the wafer and the temperature of the heater (specifically, the temperature of the thermocouple provided in the heater) will increase, so wait until the wafer and the heater become the same The temperature (2 5 ° C) takes a long time (20 minutes). So ’as shown in Figure 1 4-(Please read the notes on the back before filling in this page)
本紙張尺度適用中國國家標準（C’NS ) A4規格（210X 297公釐） A7 A7 經濟部中央標準局員工消費合作杜印製 B7___ 五、發明説明（2 ) ，在將加熱器電源關掉後的初期冷卻期間c 1 ’係使用風 扇對加熱器施予強制空氣冷卻，而將加熱器溫度Τη冷卻 至5 0 0 °C，之後的冷卻期間C 2，係不斷地對風扇反覆 地進行開、關之操作，以控制加熱器的溫度TH於 5 0 0°C左右，直到晶圓之溫度Tw降至5 0 0°C爲止。 像這樣的習知裝置，係必需要不停地對風扇進行開’關之 操作，同時，對於降溫控制也需要很多的時間，所以生產 效率很低。 而且，這種縱型熱處理爐，由於要同時處理多數之晶 圓，所以在處理管之上部，中間，下部處之晶圓之間’會 有溫度差產生，使良品率降低" 日本特開平1 一 1 8 6 6 1 6號公報所記載之熱處理 裝置，係於發熱電阻體及處理管之間，配置S i C製的均 熱構件，以防止晶圓間之加熱溫度的不平均。這種均熱構 件，係具有使處理管內之所有的晶圓之熱度相等之作用， 及防止發熱電阻或斷熱材所飛濺出之異物混入處理管內之 作用。 通常，熱處理裝置之電阻發熱體，係使用 F e C r A 1合金之加熱單元。F e C rA 1合金加熱單 元，在1 2 0 〇°C時具有2W/c m2之表面負載。但是 ’近年來，產業要求至少要有3 0°C/分（最理想的是 100°C/分（昇溫時）與60°C/分（降溫時））之昇 降溫度之高速昇降熱處理裝置，而使得表面負載很髙（ 2 0W/Cm2_)的二矽化鉬被大家所注目。 本紙张尺度適用中國國家棣準（CNS ) A4規格（210X 297公釐） 5 ----------_| (請先閲讀背面之注意事項再填寫本頁) -9 線 經濟部中央樣準局員工消费合作杜印袈 A7 ____B7__ 五、發明説明（3 ) 但是，上述均熱構件如存在於晶圓與電阻發熱體之間 ，則在最初時晶圓之溫度上昇速度度會變小，而且由於均 熱構件之存在，使發熱電阻體來的紅外線不容易通過》 如不設置均熱構件，則電阻發熱體及其支撐構件所產 生之F e，C u，N a等之金靥離子，會透過石英壁而侵 入處理管內，使晶圓被重金屬所污沒。 <發明目的及特徵> 本發明之目的，係提供能將基板迅速且平均地昇溫及 降溫，而使生產效率及良品率提髙之高速熱處理裝置之溫 度控制方法及其裝置。 又，本發明之另一目的，係提供可防止基板遭受重金 靥污染之高速熱處理裝置。 本發明之高速熱處理裝置之溫度控制方法之特徵，係 於處理管內，對暫用基板以複數的加熱手段模擬地加熱， 然後藉由溫度檢測手段分別事先檢測把握住處理管內之各 區域的暫用基板到達目標溫度爲止之基板昇溫圖案，及加 熱手段達到目標溫度爲止之加熱昇溫圖案；將要進行處理 之基板以面對面之排列方式收容於處理管內，對基板加熱 時，藉由上述溫度檢測手段分別檢測出處理管內之各區域 之溫度；在各區域之基板溫度到達目標溫度而安定下來的 這期間，依據上述各檢測溫度及上述基板昇溫圖案及加熱 器昇溫圖案，而以控制手段控制加熱手段，迅速且平均地 將基板昇溫。 (請先閱讀背面之注意事項再填寫本頁) -* 線 本紙張尺度適用中國國家標準（CNS > A4规格（210X 297公釐） -6 - 經濟部中央標準局員工消费合作杜印褽 A7 B7 五、發明説明（4 ) 如以下所示’各加熱手段被控制。 將三個溫度檢測手段分別設於處理管內之基板附近， 藉由各溫度檢測手段分別檢測出處理管內之上部’中部’ 下部之溫度。昇溫速度係以上部最慢’其次爲下部，中部 之順序。所以’提高對上部區域加熱器之供電置’則可提 高均一性。又，配合加熱單元之檢測溫度τΗ，將基板加 熱，可以使基板溫度tw迅速達到目標溫度。 更者，也可以在加熱中，藉由送風手段使處理管冷卻 〇 又，本發明之高速熱處理裝置之特徵爲：具有，有外 壁及內壁，至少有一開口，而且裝有複數個基板之縱型處 理管；及配置於上述縱型處理管之周圍的斷熱材；及設於 上述斷熱材及上述縱型處理管間之表面負載，係1 0W/ c m 2以上，對上述處理管加熱之電阻發熱體：及經由上 述開口，將上述複數片之基板搬入/搬出於縱型處理管內 之昇降機構；及對上述縱型處理管之外壁及內壁的相互間 所形成之間隙供給氣體之氣體供給手段。 所供給之氣體，最好是使用能與金靥產生反應之鹵系 氣體，氧氣，空氣等之反應性氣體。又，供給之氣體，並 不只限於反應性氣體，氮氣或氬氣體等之非反應性氣體也 可 ° <圖式說明> 1係表示說明習知之溫度控制方法之溫度圖。 本紙張尺度適用中國國家標牟（CNS ) A4規格（210X 297公釐） (請先閱讀背面之注意事項再填寫本頁)This paper scale is applicable to the Chinese National Standard (C'NS) A4 specification (210X 297 mm) A7 A7 Employee's consumer cooperation of the Central Standards Bureau of the Ministry of Economic Affairs du printed B7___ V. Invention description (2), after turning off the heater power During the initial cooling period c 1 ', the fan is used to force the air cooling of the heater, and the heater temperature Tn is cooled to 500 ° C. After the cooling period C 2, the fan is turned on and off repeatedly. The relevant operation is to control the heater temperature TH at about 500 ° C until the wafer temperature Tw drops to 500 ° C. Such a conventional device must constantly turn on and off the fan, and at the same time, it takes a lot of time for the cooling control, so the production efficiency is very low. Moreover, since this vertical heat treatment furnace processes many wafers at the same time, there will be a temperature difference between the wafers in the upper, middle, and lower parts of the processing tube, which will reduce the yield rate. The heat treatment device described in Gazette No. 1 1 8 6 6 1 6 is arranged between the heating resistor and the processing tube, and a heat equalizing member made of Si C is arranged to prevent uneven heating temperature between wafers. This soaking device has the effect of equalizing the heat of all the wafers in the processing tube and preventing the foreign substances splashed by the heating resistor or the thermal insulation material from being mixed into the processing tube. Normally, the resistance heating element of the heat treatment device is a heating unit using F e C r A 1 alloy. The F e C rA 1 alloy heating unit has a surface load of 2W / cm 2 at 120 ° C. However, in recent years, the industry has required at least 30 ° C / min (the ideal is 100 ° C / min (when heating) and 60 ° C / min (when cooling)) high-speed lifting heat treatment device, Molybdenum disilicide, which makes the surface load very high (20W / Cm2_), has attracted everyone's attention. This paper scale is applicable to China National Standard (CNS) A4 (210X 297mm) 5 ----------_ | (Please read the precautions on the back before filling this page) -9 The Central Sample Bureau's consumer cooperation Du Yinhua A7 ____B7__ V. Description of the invention (3) However, if the above heat equalizing member exists between the wafer and the resistance heating element, the temperature rise rate of the wafer will change at the beginning It is small and the infrared rays from the heating resistor are not easy to pass due to the presence of the heat equalizing member. If no heat equalizing member is provided, the gold such as F e, Cu, Na generated by the resistance heating element and its supporting member Ionium ions will invade the processing tube through the quartz wall, causing the wafer to be contaminated by heavy metals. < Objectives and features of the invention > The object of the present invention is to provide a temperature control method and apparatus for a high-speed heat treatment apparatus capable of rapidly and evenly raising and lowering the temperature of a substrate while improving production efficiency and yield. In addition, another object of the present invention is to provide a high-speed heat treatment apparatus that can protect the substrate from heavy metal contamination. The characteristic of the temperature control method of the high-speed heat treatment device of the present invention is that the temporary substrate is heated by a plurality of heating means in a simulated manner, and then the temperature detection means is used to detect and grasp each area in the processing pipe in advance. Temporarily use the substrate temperature increasing pattern until the substrate reaches the target temperature, and the heating temperature increasing pattern until the heating means reaches the target temperature; the substrate to be processed is contained in the processing tube in a face-to-face arrangement, and the substrate is heated by the above temperature detection Means respectively detect the temperature of each area in the processing tube; during the period when the substrate temperature of each area reaches the target temperature and settles down, it is controlled by the control means according to each detected temperature and the substrate heating pattern and heater heating pattern The heating means quickly and evenly raises the temperature of the substrate. (Please read the precautions on the back before filling in this page)-* The size of the line paper is in accordance with the Chinese National Standard (CNS > A4 specification (210X 297mm) -6-Employee Consumer Cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs Du Yin r B7 5. Description of the invention (4) As shown below, 'each heating means is controlled. Three temperature detection means are provided near the substrate in the processing tube, and the upper part inside the processing tube is detected by each temperature detection means' The temperature of the lower part of the middle part. The heating rate is the slowest of the upper part, followed by the order of the lower part and the middle part. Therefore, increasing the power supply to the heater in the upper area can improve the uniformity. In addition, with the detection temperature τΗ of the heating unit, Heating the substrate allows the substrate temperature tw to reach the target temperature quickly. Furthermore, the heating tube can also be used to cool the processing tube by air blowing. The high-speed heat treatment device of the present invention is characterized by having an outer wall and an inner wall. The wall has at least one opening, and is equipped with a plurality of vertical processing tubes of the substrate; and a heat insulating material disposed around the vertical processing tubes; and is provided on the The surface load between the heat insulating material and the vertical processing tube is 10 W / cm 2 or more, a resistance heating element that heats the processing tube: and the plurality of substrates are carried in / out of the vertical type through the opening Lifting mechanism in the treatment tube; and gas supply means for supplying gas to the gap formed between the outer and inner walls of the above-mentioned vertical treatment tube. The supplied gas is preferably a halogen that can react with the gold It is a reactive gas such as gas, oxygen, air, etc. In addition, the supplied gas is not limited to only reactive gas, non-reactive gas such as nitrogen or argon gas, etc. < Schematic description > The temperature chart of the known temperature control method. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) (please read the precautions on the back before filling this page)
、ST 線 經濟部中央標準局員工消費合作社印製 A7 _____B7_____ 五、發明説明（5 ) 圖2係表示本發明之第1實施例之高速熱處理爐之斷 面方塊圖。 圖3係說明實施例之溫度控制方法之溫度圖。 圖4係表示本發明之第2實施例之高速熱處理爐之剖 面方塊圖。 圖5係表示在急速加熱時加熱器之溫度TH，處理室 之內部溫度Τι及晶圓溫度Tw之實測結果之圖。 圖6係表示急速加熱時加熱器之溫度TH，處理室之 內部溫度Τι及晶圓之溫度Tw之實測結果之圖。 圖7係表示本發明之第3實施例之高速熱處理爐之剖 面圖。 圖8係表示第3實施例之高速熱處理爐之處理管之剖 面圖。 圖9係表示將外部切開之加熱單元之斜視圖。 圖1 0係表示加熱單元之裝置部之部份剖面圖。 圖1 1係表示載置於環盤上之晶圓之部份剖面圖》 圖1 2係表示說明環盤上的晶圓被射入輻射熱之部份 斷面圖。 圖13係表示環盤上之晶圖及非環盤上之晶圓的溫度 分佈之溫度特性圖。 圖1 4 A係表示本發明之實施例之熱處理裝置之縱剖 面圖。 圖1 4 B係表示熱處理裝置內部之長方向的溫度分佈 之特性圖。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐）_ 8 _ (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部中央標隼局員工消費合作杜印製 A7 B7 五、發明説明（6 ) Η 1 5係表示擴大熱處理裝置之下部之部份剖面圖。 0 1 6係表示本發明之實施例之熱處理裝置之剖面圖 〇 圖1 7係表示本發明之實施例之熱處理裝置剖面方塊 圖。 _1 8係表示擴大熱處理裝置的下部之部份剖面圖》 HI 9係表示本發明之實施例之熱處理裝置部份剖面 圖9 圖2 0係表示熱處理裝置之冷卻系統之冷卻電路圖。 圖2 1係表示熱處理裝置之其他的冷卻系統之冷卻電 路圖》 <實施例> 以下，參閱圖式說明本發明之種種實施例。 如圖2所示，第1實施例之熱處理裝置，係接受縱型 晶圓承載體5 ，而同時對多數之晶圓W進行熱處理者。此 熱處理裝置，係具備有包含溫度控制器2 0之溫度控制系 統’以高速對晶圓W進行熱處理。熱處理裝置，係具備有 石英製之處理管1 ，及加熱器3a ，3b，3c ，及外殼 4 ’及承載體昇降機構6。 處理管1及外殼4之間，形成間隙2 ，間隙2的下部 連通於冷氣供給口 7，間隙2的上部連通著排氣口 8。冷 氣供給口 7，經由管路與風扇15連通，排氣口 8係經由 熱交換器2 7及管2 5與風扇1 6連通。包含有風扇1 6 本紙張尺度適用中國國家橾準（CNS > A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) -s —線 經濟部中央標隼局員工消费合作杜印製 A7 B7 五、發明説明（7 ) 之排氣系，更與集合排氣管2 6連通" 溫度控制裝置之加熱器，係由上部加熱器3 a ，中央 部加熱器3 b及下部加熱器3 c所構成，各部之加熱器 3a ，3b，3c係從電源22獲得電力。溫度控制裝置 之溫度檢測手段，係由設於處理管1內之內部上方熱電偶 1 8 a ，及內部中央部熱電偶1 8 b及內部下方熱電偶 18c所構成。內部熱電偶18a〜18c，係連接於溫 度控制器2 0之輸入部》又，各部之加熱器3 a〜3 c之 溫度，係利用加熱器部熱電偶1 9 a〜1 9 c來檢測出， 其檢測溫度信號被輸入至溫度控制器2 0。 此溫度控制器2 0，係內藏有未圖示之微電腦，以程 式事先將實驗所收集之各種資料記憶於記憶體2 1內，而 依據記憶資料及各部之檢測溫度，來控制電源2 2。即， 管1內的上部，中央部及下部之晶圓溫度Τιυ，ΤιΜ， T1L_及加熱器之溫度TH，會進入微電腦之C P U中。 供給口 7，係設於爐本體4的下部之8個地方，與環 狀空間2 3相連通。這些供給口 7，係連接著插入於間隙 2內之噴嘴2 4 ，使風扇1 5所供給之冷卻空氣平均地流 入間隙2內。又，排氣口8係經由閘門1 3 b及槽管2 5 ，而與設置於工場等處之排氣管2 6相連接。又，槽管 2 5係被設置於，作爲冷卻使用而將高溫之排出氣體冷卻 至室溫之熱交換器2 7，及將排出氣體順利地吸至排氣管 2 6之排氣風扇1 6之間》 反應氣體導入管9插於處理管1內。此反應氣體導入 (請先閱讀背面之注意事項再填寫本頁) •^/1 線 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 10 ^04825 A7 B7 經濟部中央樣準局員工消费合作杜印製 五、發明説明（8 ) 管9上形成有多數的等間隔之氣體導入孔9 a。又，處理 管1內連接著排氣管1 0，藉由未圖示之連接於此排氣管 1 0之真空泵浦等之吸引手段，使處理管1內被吸成真空 9 晶圓承載體5，係介由保溫筒1 1而被載置於石英製 之蓋體1 2之上。此蓋體1 2，係形成爲堵塞處理管1之 下部開口。藉由0型油環12a ，使兩者1 ，12之連接 部份被密封成氣密狀態。 其次，說明溫度控制裝置。 首先，封閉供給口7及排氣口8之閘門13a ， 1 3b，堵塞供給口 8及排氣口 8 »然後，藉由昇降機構 6的驅動，使晶圓承載體5上昇，將晶圓承載體2 5插入 處理管1內。接著，將加熱器電源2 2打開，藉由加熱器 3 a〜3 c ，使處理管1內加熱至比預定溫度（5 0 0°C )爲高（例如1000 °C)之後，打開閘門13a ， 1 3 b ，開放供給口 7及排氣口 8 ，同時，驅動供給風扇 1 5及排氣風扇1 6 ’將外面之空氣導入間隙2內，強制 地將處理管1及晶圓W冷卻。 如圖3所示，檢測晶圓溫度Tiu，TiM，T1L，將檢 測出之溫度信號傳送至溫度控制器2 0，依據這些信號， 分別將電源2 2供給至上部加熱器3 a 、中央部加熱器 3 b、下部加熱器3 c之供電量加以控制。即，中央部之 晶圖溫度TltI最高’其次依序爲下方部之晶圚溫度丁 上方部之晶圓溫度T1U。配合上述之狀況來控制供給加熱 (請先閲讀背面之注意事項再填寫本頁) 訂 線 本紙張尺度適用t國國家標準（CNS ) A4規格（2丨0x297公釐）-11- A7 B7 經濟部中央標隼局員工消費合作社印裝 五、發明説明（9 ) 器 3 a 3 C 之 給 電 量 使 晶 圓 W 之 加 熱 溫 度 平 均 〇 1 1 如 此 > 在 使 晶 圓 的 溫 度 保 持 在 預 定 溫 度 之 狀 態 下 » 從 1 1 反 應 氣 體 導 入 管 9 將 反 rrbs 應 氣 體 供 給 至 處 理 管 1 內 I 來 進 行 1 I 請 1 I 晶 圓 表 面 之 不 純 物 的 擴 散 處 理 〇 此 擴 散 處 理 結 束 後 ， 將 電 k, Μ 1 I 讀 1 源 2 2 關 閉 > 將 例 如 氮 ( N 2〕 之清洗氣體導入處理管 L 背 1¾ 1 | 內 » 進 行 清 洗 〇 然 後 » 在 處 理 管 1 內 之 溫 度 降 至 定 溫 度 之 注 音 1 事 1 ( 2 5 °c ) 之 後 1 驅 動 昇 降 機 構 6 » 使 晶 圓 承 載 體 5 下 降 項 再 1 » 取 出 晶 圓 W > 結 束 處 理 作 業 0 填 寫 本 1 其 次 9 參 閱 圖 4 圖 6 說 明 第 2 實 施 例 0 又 t 省 略 第 頁 1 1 2 實 施 例 中 與 第 1 實 施 例 共 通 部 份 之 說 明 〇 1 1 如 圖 4 所 示 第 2 實 施 例 之 溫 度 控 制 裝 置 係 於 供 給 1 | 扇 1 5 及 溫 度 控 制 器 2 0 之 間 設 置 反 相 器 2 8 同 時 9 訂 I 也 在 排 氣 扇 1 6 與 溫 度 控 制 器 2 0 之 間 設 置 反 相 器 2 9 1 1 I 0 這 些 反 相 器 2 8 2 9 係 具 有 接 受 從 溫 度 控 制 器 2 0 1 1 來 的 指 令 然 後 對 風 扇 1 5 1 6 之 風 量 加 以 控 制 之 機 能 〇 1 此 溫 度 控 制 裝 置 係 將 藉 由 內 部 上 方 熱 電 偶 1 8 a » 線 1 內 部 中 央 熱 電 偶 1 8 b 及 內 部 下 方 熱 電 偶 1 8 C 所 檢 測 出 1 | 之 溫 度 信 號 傳 送 至 溫 度 控 制 器 2 0 〇 溫 度 控 制 器 2 0 > 係 I 依 據 所 接 受 之 信 號 來 控 制 加 熱 器 電 源 2 2 * 控 制 上 部 加 熱 1 1 | 器 2 a 9 中 央 部 加 熱 器 3 b 9 下 部 加 熱 器 3 C 之 溫 度 ♦ 同 1 1 時 控 制 反 相 器 2 8 2 9 之 頻 率 〇 即 溫 度 控 制 器 2 0 1 1 » 係 使 供 給 扇 1 5 及 排 氣 扇 1 6 之 旋 轉 數 改 變 — 邊 控 制 1 1 冷 卻 空 氣 之 供 給 量 一 邊 也 控 制 排 氣 量 〇 1 各 加 熱 器 3 a » 3 b 及 3 C 之 溫 度 » 係 分 別 藉 由 配 置 1 張 紙 本 準 標 家 國 國 中 用 適 規 經濟部中央標準局員工消費合作杜印製 A7 ______B7__ 五、發明説明（10 ) 於其附近之加熱器部熱電偶1 9 a ，1 9 b及1 9 c所檢 測出’其檢測信號係輸入至溫度控制器2 0。此溫度控制 器2 0 ’係內藏有連接於外部記億體2 1之微電腦（未圖 示）。外部記憶體21 ，係記憶有在實際的處理之前所作 成之上部’中央部及下部之晶圓的溫度Tw(TWh，TWni 及Twj?)及，加熱部熱電偶1 9 a〜1 9 c之檢測溫度 Τ η ( T Hh，T Hn^ THj?)及內藏熱電偶 18a 〜18c 之檢測溫度ΤΙ (ΤΙ h，Tim及ΤΙ又）。內藏之電 腦，其中之程式係被設計成將內部熱電偶1 8 c〜1 8 c 之檢測溫度Τ 1及溫度資料作比較演算，來控制加熱器電 源22。又，在上述實施例中，係將加熱手段3a〜3c 及溫度檢測手段1 8 a〜1 8 c設置成各3組，也可以將 其設成各2組或4組》 作爲事先測定晶圓溫度T w所用之暫用晶圓D W，係 準備有上部用（DWa)，中間部用（DW6)及下部用 (DWc)共計3片。資料作成用的各暫用晶圓DWa ， DWb及DWc ，係安裝有晶圓熱電偶30a ，30b及 30c。晶圓熱電偶30a ，30b ，30c之檢測溫度 Twh’ TWm&TWi，係被輸入至溫度控制器2 0。 其次，參閱圇5及圖6 ，說明控制急速加熱時間晶圓 溫度T w之情況。 如圖5所示，以前，如將多數之晶圓W，以加熱器 3a ，3b，3c加熱’使其在短時間溫度上昇，則加熱 器溫度TH，處理室之內部溫度Τ 1 ，晶圓溫度TW，係 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 13 (請先閱讀背面之注意事項再填寫本頁) 、1Τ 線 A7 B7 經濟部中央標隼局貝工消費合作杜印製 五、發明説印 (11 ) 分 別 如 圖 —· 般 變 化 〇 從 圖 可 知 加 熱 器 溫 度 Τ Η 9 從 初 期 1 1 溫 度 2 0 0 °c 至 百 栖 慑 溫 度 1 0 0 0 °c 所 須 要 的 時 間 爲 約 1 1 1 0 分 鐘 0 然 後 » 再 經 過 1 0 分 鐘 則 晶 圓 溫 度 Τ W 到 達 請 λ 聞 1 1 巨 標 溫 度 1 0 0 0 °C 9 之 後 * 處 理 室 的 內 部 溫 度 Τ 1 到 達 I I g 標 溫 度 1 0 0 0 °C 0 這 些 溫 度 T W T Η » Τ I 之 測 定 讀 背 面 1 1 I 結 果 > 只 要 使 用 之 熱 處 理 爐 的 構 造 t 被 處 理 體 之 處 理 片 段 之 注 意 1 | 及 加 熱 手 段 之 昇 溫 速 度 等 之 諸 條 件 相 同 » 則 常 會 有 相 同 之 事 項 再 1 結 果 〇 即 1 指 定 在 加 熱 途 中 某 一 時 之 內 部 溫 度 Τ 1 > 則 該 填 寫 本 1 時 間 之 加 熱 器 溫 度 T Η 及 晶 圓 溫 度 T W 同 樣 地 可 求 得 〇 頁 S_^ 1 1 參 閱 圖 6 說 明 以 本 實 施 例 之 方 法 控 制 晶 圓 溫 度 Τ W 時 1 1 之 狀 況 〇 1 I 在 進 行 實 m rsi> 處 理 之 前 » 先 進 行 記 億 於 記 億 體 2 1 之 溫 訂 I 度 資 料 之 作 成 0 首 先 關 閉 供 給 □ 7 及 排 氣 □ 8 之 閘 門 1 1 I 1 3 a 1 3 b 堵 塞 供 給 □ 7 及 排 氣 □ 8 〇 然 後 分 別 1 1 | 在 晶 圓 承 載 體 5 的 上 部 中 間 部 及 下 部 裝 設 暫 用 晶 圓 1 D W a D W b D W C 將 承 載 體 5 裝 入 處 理 管 1 內 〇 線 1 其 次 在 溫 度 控 制 器 2 0 在 溫 度 資 料 作 成 模 式 之 狀 態 1 1 下 將 巨 標 溫 度 設 定 在 1 0 0 0 °c 打 開 加 熱 器 電 源 2 2 1 同 時 « 開 始 晶 圖 熱 電 偶 3 0 a 3 0 b 及 3 0 C 及 內 ! 1 部 熱 電 偶 1 8 a 1 8 b 及 1 8 C 及 加 熱 部 熱 電 偶 1 I 1 9 a » 1 9 b 及 1 9 C 之 溫 度 測 定 〇 這 些 熱 電 偶 3 0 a 1 1 3 0 C 1 8 a 1 8 C 及 1 9 a 1 9 C 所 測 定 之 資 1 1 料 » 係 藉 由 溫 度 控 制 器 2 0 之 微 電 腦 變 換 成 溫 度 控 制 用 的 1 資 料 » 然 後 記 億 於 記 憶 體 2 1 〇 此 溫 度 控 制 用 的 資 料 1 係 1 本紙張尺度適用中國國家標隼（CNS〉A4規格（210X297公釐） A7 B7 經濟部中央標隼局員工消费合作社印製 五、發明説明（ 12 ) 表 示 在 各 時 刻 之 晶 圓 溫 度 T W 及 內 部 溫 度 T 1 及 加 熱 器 溫 1 1 度 T Η 的 二 者 間 之 對 Tzhg 應 關 係 之 資 料 9 相 當 於 圖 5 及 圖 6 所 1 1 示 之 溫 度 圖 〇 然 後 進 行 測 量 直 到 晶 圓 W 之 溫 度 T W 到 達 I I 請 1 1 巨 標 溫 度 爲 止 » 在 收 集 了 溫 度 控 制 用 之 資 料 後 1 將 加 熱 器 先 閱 1 I 電 源 2 2 關 閉 > 使 晶 圓 承 載 體 5 下 降 > 取 下 暫 用 晶 圓 讀 背 1 I D W a j D W b 及 D W C 〇 之 注 意 1 1 | 如 上 述 這 樣 作 溫 度 控 制 用 的 資 料 後 » 進 行 實 際 之 處 理 事 項 再 1 1 1 動 作 0 這 時 ) 首 先 » 關 閉 供 給 □ 7 及 排 氣 □ 8 之 閘 門 填 寫 本 1 1 3 a > 1 3 b > 堵 塞 供 給 P 7 及 排 氣 □ 8 〇 然 後 將 未 頁 1 1 處 理 之 晶 圓 W 裝 載 於 晶 圓 承 載 體 5 上 再 將 晶 圓 承 載 體 5 1 1 裝 入 處 理 管 1 內 〇 其 次 » 將 溫 度 控 制 器 2 0 設 於 實 際 處 理 1 1 模 式 之 狀 態 下 » 設 定 巨 標 溫 度 打 開 加 熱 電 源 2 2 開 始 訂 I 加 熱 0 這 時 溫 度 控 制 器 2 0 係 藉 由 內 部 熱 電 偶 1 8 a 1 I > 1 8 b 及 1 8 C 隨 時 監 視 內 部 溫 度 T 1 〇 然 後 依 據 1 1 1 內 部 溫 度 Τ 1 及 記 憶 於 記 憶 體 2 1 之 測 定 資 料 控 制 加 熱 1 線 1 器 3 a 3 b 及 3 C 之 溫 度 將 晶 圓 W 加 熱 至 巨 標 溫 度 〇 如 圖 6 所 示 » 如 —- 邊 控 制 風 扇 1 5 1 6 之 旋 轉 數 1 1 — 邊 控 制 對 加 熱 器 3 a 3 b > 3 C 之 供 電 量 » 則 加 熱 器 1 I 溫 度 T Η > 在 短 時 間 即 超 過 S 標 溫 度 1 0 0 0 °C 1 接 著 實 | 際 之 晶 圓 溫 度 T W * 大 約 在 1 0 分 鐘 即 應 該 會 到 達 1 1 I 1 0 0 0 °C 〇 由 於 係 配 合 昇 溫 速 度 來 控 制 風 扇 1 5 » 1 6 1 1 I 之 旋 轉 數 » 所 以 > 實 際 之 晶 圓 溫 度 T W 在 到 達 巨 標 溫 度 1 ! 1 0 0 0 °c 之 後 也 不 會 產 生 過 熱 現 象 > 而 能 維 持 在 1 1 0 0 0 °c 〇 之 後 y 內 部 溫 度 T 1 達 到 巨 標 溫 度 1 本紙張尺度適用中國國家標準（CNS > A4堤格（2丨0>< 297公釐） 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（13 ) 1 000°C，熱平衡也安定，所以使風扇15 ，16定常 旋轉。 將晶圓溫度TW保持在目標溫度之狀態下，將反應性 氣體供給至處理管1內，在晶圓的表面進行不純物成分之 擴散。在熱擴散處理終了之後，將處理管1內以N 2氣體 清洗。使處理管1內之溫度冷卻至室溫（例如2 5 °C)， 則將風扇15 ，16停止，將晶圓承載體5從處理管1卸 下。 依據上述實施例，可良好地控制晶圆W之淺的擴散深 度。又，可以對配置於處理管內之上部，中央部，下部之 晶圓W，在實質上沒有溫度差的情況下平均地進行加熱處 理。 又，藉由配置於晶圓附近之溫度檢測手段，檢測晶圓 處理氣體之內部溫度T1 ，依據以檢測溫度控制加熱手段 ，同時，控制送風手段之送風容量，所以可以迅速且正確 地進行配合晶圓W之急速冷卻狀況之溫度控制。如此，即 可提高生產率及良品率。 其次，參閱圖7〜圖1 3 ，說明其他之實施例。 圚7所示之熱處理裝置，係使用於半導體晶圓之氧化 擴散處理之氧化擴散爐。此氧化擴散爐之處理管4 0，係 很容易通過紅外線等之輻射熱線，係由不易產生異物之高 純物石英或藍賣石所構成。此處理管4 0之開口端部，連 結著不銹鋼製之基座（未圔示），藉此支持處理管4 0。 處理管40之壁，係二重壁40a ，40b。於內壁 (請先閱讀背面之注意事項再填寫本頁) 、?τ 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） -16 - ^04825 at Β7 五、發明説明（14 ) 40b之中，形成處理空間42。在處理空間42內’保 溫筒1 1上所載置之承載體5被裝載/卸載。保溫筒1 1 係載置於凸緣蓋12上’此凸緣蓋12被安裝於電梯臂上 。承載體5係從下部開口 4 1被裝入處理室4 0內》保溫 筒1 1係與具有皮帶5 4之旋轉機構未圖示相連結》 如圖8所示，處理管40，係由外管40a及內管 40b所構成，管40a ，40b之相互間形成空間 40c。在開口端側，兩管40a，40b被熔接而成一 體，而空間4 0 c被關閉。此空間4 0 c係連通有洗淨氣 體導入用管7 6及排氣管4 0 d。管7 0係於處理管4 0 的上部，在空間4 0 c處有開□。管4 0 d係於處理管 4 0的下部，在空間4 0 c處有開□。管4 0 d之一端係 連通於排氣裝置（未圖示）。 經濟部中央標隼局月工消費合作杜印製 管7 0係與收容有氯氣或氧氣之洗淨氣體供給源（未 圚示）相連接。又，洗淨氣體亦可以使用氯氣以外之鹵系 氣體。又，使洗淨氣體與金靥離子產生化學反應，再排出 也可，更者也可以將金颶離子與氮氣一起排出。從洗淨氣 體供給源至空間4 0 c ，係將體積比爲1〜1 〇%之含有 量的氯氣’或流量5 m3 /分左右之氧氣加以供給。又， 將上述氣體混合使用時，總置設定爲5〜8 m3 /分之供 給量β 從管7 0導入氣體之時序，係被設定成有金屬離子發 生時，例如，設定成在處理管內之昇溫時，及處理溫度被 維持之期間。又，此導入時序，亦可以是在每次處理實行 17 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家櫺準（CNS ) Α4規格（210 X 297公羞） 經濟部中央樣隼局員工消费合作社印裝 A7 B7 五、發明説明（15 ) 時，但是，由於聚集金靥離子從空間內排出之關係，在金 屬離子發生較少之時期即昇溫或裝載/卸載時，最好避免 氣體之導入。這是爲了減低氣體的消耗。又，在處理管 4 0及發熱電阻5 6之間設置間隙，最好是將空氣等之冷 媒流入此間隙。即，形成從下方向上方之空氣流，將晶圓 W強制冷卻。 連通於處理管氣體供給源（未圖示）之管5 0，係被 設置於處理空間4 2內》管5 0係沿著內臂4 0 b從管下 部至上部，在管的天花板處有開口》 處理管4 0之外周，係安裝有電阻發熱體5 6。於電 阻發熱體5 6的外側設有筒狀斷熱材5 8，藉由此筒狀斷 熱材5 8，使電阻發熱體5 6被支持。然後更在筒狀斷熱 材58的外周，分別設置內壁52及外壁64。在內殼 6 2及外殼6 4處，收容有使冷媒循環之冷卻管6 0。 電阻發熱體，係被分成頂部5 6 a ’中間5 6 b及尾 部56c之三個區域。各區域56a ，56b，56c， 在空間4 2內藉由溫度控制器（未圖示）’分別獨立地被 溫度控制，使晶圓W所在之領域平均地被加熱。又’斷熱 材5 8也定配合上述頂部，中間及尾部等三個區域，分成 頂側，中側及尾側之斷熱材5 8 a ，5 8 b，5 8 c。 如圖9所示，斷熱材58a ，58b，58c ’係由 半圓筒狀之物體組合而成之圖筒形狀。而電阻發熱體 5 6 a ，5 6 b，5 6 c也是將左右分開之物體組合而成 者。斷熱材5 8之厚度，希望是在4 5mm以下’最理想 ---------ψ------IT------^ (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 18 - A7 B7 經濟部中央標隼局貝工消费合作杜印製 五、發明説明（ 16 ) 的 是 2 5 m m 左 右 者 〇 像 這 樣 的 斷 熱材 5 8之厚 度，在機 1 I 械 的 強 度 能 維 持 的 範 圍 內 > 儘 可 能 地使 其薄。 1 1 1 電 阻 發 熱 體 5 6 a y 5 6 b > 5 6 C係由一 硅化鉬（ 1 I 請 1 Μ 0 S i 2： >所製成者 。實際上 ，係使用主成分爲二硅化 先 閲 1 I 1 1 鉬 ( Μ 0 S i 2： 之加熱器 (K an tha 1 公 司所出產 之 背 1 I Ka n t h a 1 Super發熱體' ) >此二硅化鉬製之發熱電阻體， 注 意 1 事 1 在 常 溫 下 其 電 阻 值 非 常 低 9 在 變 成 高溫 時其電阻 值也變大 項 再 1 填 1 0 電 阻 發 熱 體 之 線 徑 > 最 好 是 在 1 .5 m m以上 ，6 m m 寫 本 I 以 下 0 其 理 由 是 » 線 徑 d 如 果 超 過 6 m m，則不 能進行理 頁 1 1 想 之 高 速 昇 溫 及 高 速 降 溫 而 線 徑 d小 於1 . 5 m m時， 1 1 會 變 的 很 容 易 折 斷 〇 又 電 阻 發 熱 體之 表面負載 ，在 1 1 1 2 0 0 °C 設 定 成 1 0 3 0 W / c m 2是最適當的。而 訂 I 比 起 習 知 之 F e C r A 1 加 熱 器 ( 最大 表面負載 在 1 I 1 2 0 0 °c 爲 2 W / C m 2 ) M c )S 2加熱器 可獲得數 1 1 I 倍 至 十 數 倍 的 發 熱 量 〇 因 此 相 對 於F e C r A 1發熱體 1 1 線 之 1 0 °c / 分 之 昇 溫 速 度 Μ 0 S i 2加熱器至少可得到 1 3 0 °c / 分 最 大 可 得 到 1 0 0 °c /分 之昇溫速 度。 1 1 如 圖 9 所 示 又 電 阻 發 熱 體 5 6 a ，5 6 b ， I I 5 6 C 係 被 設 成 在 各 個 區 域 沿 著 周面 ，有1相 線材沿著 1 I 縱 方 向 延 伸 » 上 下 互 相 地 折 成 U 字 形且 成連續之 形狀（以 1 1 1 下 > 稱 此 形 狀 爲 連 績 彎 曲 形 » 如 圖 10 所示，形 成爲連績 1 1 | 彎 曲 之 發 熱 電 阻 體 5 6 a ♦ 5 6 b ，5 6 c，藉 由卡釘 1 1 6 6 而 被 安 裝 保 持 於 各 斷 墊 構 件 5 8 a * 5 8 b ，5 8 c 1 之 內 側 面 〇 此 卡 釘 6 6 係 在 發 熱 電 阻體 5 6a， 5 6b- 1 本紙張尺度適用中國國家標準（CNS M4規格（2丨0X297公釐） 經濟部中央揉隼局員工消费合作杜印製 A7 ___B7_ 五、發明説明（π ) 5 6 C的上部，安裝於各各折返部之頂部，將這些發熱電 阻體吊著支撐著，同時，在電阻發熱體56a，56b ， 5 6 c的下部，避開各折曲部而將直線部分加以支持，使 其位置固定。藉由像這樣使電阻發熱體56a ，56b ， 5 6 c的下部折返部處於解放之狀態，而能容許電阻發熱 體56a，56b，56c之熱膨脹及收縮所造成之上下 方向的長度之變化。 更者，電阻發熱體56a ，56b，56c，如被加 熱則表面會產生二氧化矽（Si 〇2)，這個會產生保護 膜之作用，所以不容易折斷》這種情況時，將與電阻發熱 體56a ’ 56b，56c直接接觸之卡釘66表面，以 即使在例如1 2 0 0 °C之高溫亦不會與二氧化矽產生作用 之惰性材料形成，使電阻發熱體56a ，56b，56c ’不會在卡釘6 6的接觸部折斷。作爲卡釘6 6之鍍層材 料，有例如鐵（Fe)，銅（Cu)，鎳（Ni)等。又 ，卡釘6 6之整體也可以用這些材料。 如圖1 1及圖1 2所示，承載體5等間隔地收容有多 數片之晶圓W。各晶圓w，其周緣部係藉由環盤5 4而分 別地被支持著。環盤5 4係具備有載置部5 4 a及側壁部 5 4 b。該側壁部5 4 b之高度丁2像與晶圓W的厚度T 相同或比較大。如圚1 2之點線所示，從加熱源來的輻射 熱，被相鄰接之晶圓W所遮斷，限制了到達晶園W的中央 部分之輻射熱量•環盤5 4之相互之間的間隔Li，係可 使晶圓W裝載/卸載於載置部之搬送臂（未圖示）能出入 本紙張尺度適用中國國家標準（CNS ) A4現格（210X297公產） ------：----^------,玎------^ · (請先閲讀背面之注意事項再填寫本頁) -20 - 經濟部中央樣牟局負工消費合作社印褽 A7 _— _B7__ 五、發明説明（is ) 之尺寸。又，側壁部5 4 b之寬度L2，係能夠避免在晶 及環盤5 4膨脹時之相互干擾之寬度。 圖1 3係以橫軸表示從晶圓中心所看到之位置，而以 縱軸表示晶圓溫度之晶圓溫度分佈圖。圚中，曲線TR係 表示本實施例（使用環盤5 4之情況）之結果，曲線TN 係表示比較例（未使用環盤5 4之情況）之結果。從圓可 以看出，實施例比比較例之晶圚面內之溫度均一性要好》 其次說明作用。 將承載體5裝入處理管4 0內，將處理管4 0排氣。 供電給各加熱器56a ，56b，56c ，使晶圓W高速 昇溫。又，最好是在將承載體5搬入前，先將處理空間 4 2內加熱至6 0 0 °C以下。在6 0 0°C以下的溫度時， 氧化膜的生成速度變慢，對提高生產率而言是有利的。另 外一方面，加熱器5 6之輻射熱直接透過處理管1 0，射 入空間4 2內之晶圓_ W。習知構造有在中間的均熱構件， 而本案沒有，因此本案之晶圖W昇溫較快。 介由管7 0，將洗淨氣體導入空間4 0內。當使加熱 器56a ，56b ，56c發熱時，會產生二氧化矽（ 5 i 0 2 )，同時，從卡釘66產生Fe ’ Cu ，Na等 之金屬離子。這些金靥離子等透過外管4 0 a ，進入空間 40c內》更者，金靥離子等會企圖穿過內部40b ，但 是被洗淨氣體所遮住，經由排氣管4 0 d排出外部。 依據本實施例，洗淨氣體本身之溫度昇高，也可以使 與金靥離子之反應性提高。所以，使提高金属離子之收集 本紙張尺度適用中國國家標準（CNS ) A4规格（210X 297公釐）_ ~' II-------1------ΐτ------# (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消費合作杜印製 A7 ______B7____ 五、發明説明（l9 ) 率成爲可能。又，此效果在降溫處理中特別地顯著’至少 在降溫時，上述洗淨氣體之供給是有效果的。 又依據本實施例，藉由環盤使晶圓之周緣部成爲可裝 載之構造，所以比起晶圓的中心部，周緣部之熱容量可設 定成較大的狀態。因此，可防止藉由相鄰接之半導體晶圓 而使入射輻射熱被遮住時所產生之周緣部之異常的溫度上 昇，而且，射入周緣部之熱線被遮住，所以能更確實地防 止溫度上昇。 更者，依據本實施例，由於斷熱材的厚度比習知者薄 ，所以可以使處理管之熱容量變小，而確保高速熱處理爐 之溫度變化速度。而且，習知之熱處理爐所使用之斷熱材 的厚度，與本實施例之2 5mm相比，習知者爲5 Omm 以上。由此厚度的不同，可使加熱器之直接接觸的熱輻射 有效地作用，而使晶圓的溫度上昇加速。 其次，參閱圖14A，14B，14C，說明其他的 實施例之縱型熱處理裝置。 如圖1 4A所示，縱型熱處理裝置8 0，係具有處理 管82，加熱器84及岐管86。處理管82，係具有被 設成同軸之外管1 2 2及內管1 2 4 »於外管1 2 2的外 周設有加熱器8 4 » 如圖1 5所示’岐管8 6，係經由分別配置於外管 1 2 2及內管1 2 4的下端之0形環，支撐著處理管8 2 。此岐管8 6係分別與處理氣體用導入管9 0 ,清洗氣體 用導入管9 2及排氣管9 4相連接。 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐）_ 22 _ ' I---------4------ΐτ------i (請先閱讀背面之注意事項再填寫本頁) 2^4825 A7 B7 經濟部中央標隼局貝工消费合作社印製 五、發明説明（2〇 ) 1 於 岐 管 8 6 的 下 方 設 置 承 載 體 電 梯 8 8 » 藉 此 使 承 載 1 | 體 5 被 昇 降 可 能 地 支 持 著 9 在 承 載 體 電 梯 8 8 的 電 梯 臂 1 ! 1 0 0 其 eta 與 岐 管 8 6 的 下 端 開 □ 相 對 之 位 置 > 設 有 蓋 體 1 I 请 I 1 0 2 0 先 閱 1 I 讀 1 I 電 梯 臂 1 0 0 » 除 了 蓋 體 1 0 2 之 外 » 在 其 蓋 體 背 ώ 1 I 之 I 1 0 2 之 上 方 » 設 有 保 溫 筒 承 受 台 1 0 4 9 此 保 溫 筒 承 受 注 意 1 事 1 台 1 0 4 載 有 保 溫 筒 1 1 > 而 此 保 溫 筒 1 1 的 上 端 承 載 體 項 再 1 填 1 5 被 支 撐 著 0 承 載 體 5 及 內 管 1 2 4 係 由 石 英 所 形 成 〇 岐 寫 本 飞 管 8 6 之 周 壁 部 及 電 梯 臂 8 0 的 蓋 體 1 0 2 係 由 鋁 或 鋁 頁 1 1 合 金 所 作 成 的 〇 岐 管 8 6 的 周 壁 部 及 電 梯 臂 1 0 0 的 蓋 體 1 1 1 0 2 形 成 可 確 保 密 閉 空 間 全 域 之 平 均 之 熱 的 傳 導 之 領 1 I 域 〇 又 也 可 以 於 蓋 體 1 0 2 上 安 裝 加 熱 器 以 配 合 需 要 1 訂 I 對 蓋 體 1 0 2 加 熱 0 在 岐 管 8 6 的 壁 部 設 有 作 爲 〇 型 環 1 1 1 的 冷 卻 用 之 冷 媒 通 路 4 0 0 1 1 又 岐 管 8 6 的 表 面 以 矽 系 之 覆 蓋 材 料 進 行 電 鍍 0 覆 1 蓋 材 料 係 作 爲 晶 圓 W 之 重 金 靥 污 染 防 止 用 以 二 氧 化 矽 ( 線 1 S i 0 2 ) 作成的。 但是 由於岐管8 e 5的表面係以薄的 1 I 氧 化 鋁 覆 膜 所 形 成 > 只 是 這 層 氧 化 膜 在 與 高 溫 處 理 氣 體 接 1 1 觸 之 下 是 不 夠 的 0 所 以 可 以 在 岐 管 8 6 的 表 面 進 行 防 蝕 鋁 I i 處 理 » 然 後 再 錠 上 氧 化 矽 0 又 * 岐 管 8 6 之 覆 蓋 材 料 t 除 1 1 了 S i 0 2之外· 也可以使用/ 2 〇 3 ! S i C 1 1 S i 3N 4 0 1 1 如 圖 1 4 B 所 示 9 在 裝 置 的 長 方 向 向 產 生 溫 度 斜 率 〇 1 在 習 知 的 裝 置 係 如 圖 之 溫 度 曲 線 T 2所示 岐管比處理 適 尺 張 紙 準 標 家 經濟部中央橾隼局員工消費合作社印製 A7 B7 五、發明説明（21 ) 管上部之溫度爲低。如此，則由於岐管8 6的放熱，使處 理環境之處理溫度不均一。所以，均熱的區域之溫度也變 的不安定，均熱區域之溫度不安定時，則形成薄膜所需要 的溫度也變的不平均，使晶圓W之間的薄膜形成條件變的 不均~*。 另一方面，本實施例之裝置，係如溫度曲線Τι所示 ，岐管8 6之溫度被保持在1 5 0°C。這是因爲將溫度調 整機構設於岐管8 6的原因。作爲溫度調整機構，可使用 埋在岐管8 6的周壁部之包皮加熱器1 2。此包皮加熱器 1 2係具有可撓性。而且在岐管8 6的表面覆蓋有二氧化 矽，所以可確實地控制重金靥離子的發生。 又’如圖1 6所示，也可以將清除部1 5 0設於岐管 的周圍。像這樣的清除部1 5 0，係如記載於日本特開平 2 — 876 1 8號公報者。即，外管1 22經由外岐管 1 5 2而被固定於基底塊1 5 4，內管1 2 4經由內岐管 1 5 6而被固定於外岐管1 5 2的下端。 基底塊1 5 4的下方，此包圍外岐管1 5 2及內岐管 1 5 6的外周及下面之狀態’設置圓筒容器狀之清除部本 體1 5 8。清除部本體1 5 8係由鋁系合金材料所作成的 。又’構件152，154 ’ 156，158係以二氧化 矽（S i 0 2)覆蓋。 又’清除部本體1 5 8的側面，設置排氣口 1 6 2 ， 更者’在下面形成在使承載體電梯9 8昇降時被開放之開 口 1 64。此開口 1 64係藉由閘門1 66而被開閉。閘 本紙張尺度適用中國國家橾準（CNS ) A4規格（210X297公釐） -----^---'1^-----------—0 (請先閲讀背面之注意事項再填寫本頁) -24 - A7 B7 經濟部中央橾準局員工消費合作社印製 五、發明説明（22 ) I 門 1 6 6 係 以 二 氧 化 矽 覆 於 鋁 系 金 靥 材 料 上 而 作 成 者 0 1 1 I 像 這 樣 的 構 造 t 也 可 以 使 岐 管 附 近 領 域 之 溫 度 分 佈 一 1 1 樣 〇 N 1 I 請 1 1 其 次 » 參 閱 圖 1 7 及 圖 1 8 說 明 其 他 的 實 施 例 之 高 先 閱 I I 讀 1 1 速 熱 處 理 裝 置 0 又 此 實 施 例 與 上 述 實 施 例 相 同 部 分 之 說 背 1¾ 1 I 之 1 明 I 予 以 省 略 〇 注 素 1 事 1 此 實 施 例 之 高 速 熱 處 理 裝 置 係 於 岐 管 2 1 1 及 蓋 體 項 再 填 1 1 2 的，外 周 安 裝 加 熱 器 1 4 b 0 又 在 供 給 管 9 及 排 氣 管 寫 本 十 1 0 的 外 面 分 別 安 裝 加 熱 器 1 4 a 〇 這 些 加 熱 器 1 4 a » 頁 1 1 1 4 b 係 形 成 爲 薄 片 狀 分 別 與 電 源 1 4 C 連 接 <3 這 些 加 1 1 熱 器 1 4 a 1 4 b 可 予 先 覆 蓋 於 管 9 1 0 上 也 可 以 1 1 在 每 次 進 行 處 理 時 捲 於 管 9 1 0 上 又 蓋 體 1 2 沒 訂 | 有 冷 媒 導 入 空 間 1 2 b 此 冷 媒 導 入 空 間 1 2 b 係 經 由 1 I 開 閉 閥 2 3 0 及 泵 浦 2 3 1 與 冷 卻 水 儲 存 槽 2 3 2 連 通 1 1 1 如 圖 1 8 所 示 加 熱 器 用 電 源 1 4 C 係 被 溫 度 控 制 線 I 器 2 0 所 控 制 〇 溫 度 控 制 器 2 0 的 輸 入 側 連 接 著 熱 電 偶 1 1 2 1 5 〇 熱 電 偶 2 1 5 係 安 裝 於 岐 管 用 的 0 型 環 2 1 6 的 I 附 近 〇 從 熱 電 偶 2 1 5 來 的 檢 測 信 — 進 入 溫 度 控 制 器 I 2 0 則 從 溫 度 控 制 器 2 0 向 電 源 1 4 發 出 指 令 信 號 藉 1 1 I 由 加 熱 器 1 4 a 1 4 b 使 岐 管 2 1 1 於 1 5 0 °c 1 1 1 2 0 0 °C 之 範 圍 被 加 熱 0 此 處 將 加 熱 溫 度 控 制 在 1 1 1 5 0 °C •-W 2 0 0 °c 之 範 圍 的 理 由 係 反 應 生 成 物 不 會 付 1 著 在 管 9 > 1 0 > 岐 管 2 1 1 及 蓋 體 1 2 之 內 面 也 不 會 1 本紙張尺度適用中國國家標準（€奶）六4規格（2丨0/297公釐）_25 A7 B7 經濟部中央標準局負工消费合作杜印製 五、發明説明（ 23 ) 1 使 0 型 環 2 1 6 y 1 2 a 受 到 熱 的 損 傷 〇 又 9 也 可 以 將 加 1 I 熱 器 1 4 a ♦ 1 4 b 埋 設 於 管 9 9 1 0 » 岐 管 2 1 1 及 蓋 1 1 體 1 2 之 中 〇 又 » 如 圖 1 7 之 點 線 所 示 » 藉 由 溫 度 控 制 器 1 I 請 1 1 2 0 來 控 制 冷 媒 供 給 系 之 開 關 閥 2 3 0 也 是 可 能 的 〇 藉 此 先 閲 I | 讀 1 * 可 防 止 蓋 體 1 2 之 溫 度 超 過 所 期 望 之 溫 度 以 上 〇 背 ιέ 1 I 其 次 » 參 閱 圖 1 9 圖 2 1 說 明 其 他 實 施 例 之 高 速 之 注 旁 1 1 熱 處 理 裝 置 0 又 » 此 實 施 例 與 上 述 實 施 例 相 同 部 分 之 說 明 項 JL 填 1 予 以 省 略 〇 寫 本 t 高 速 熱 處 理 裝 置 係 將 處 理 管 1 加 熱 至 1 0 0 0 X 之 頁 'w*' 1 1 後 9 急 速 冷 卻 至 5 0 0 °c 然 後 要 再 冷 卻 至 室 溫 ( 約 1 1 2 5 °C ) 則 需 要 將 多 置 之 冷 卻 空 氣 從 供 給 □ 7 導 入 空 間 1 1 2 內 之 後 再 從 排 氣 □ 8 排 出 至 外 部 0 以 -V.A» 刖 像 這 樣 的 強 訂 1 制 冷 卻 係 使 用 清 淨 室 內 ( cl e a η room ) 之 清 淨 空 氣 所 1 I 以 空 氣 清 淨 設 備 會 大 型 化 0 又 僅 只 是 將 乾 淨 的 空 氣 從 排 1 1 1 氣 □ 排 出 至 工 場 外 部 所 以 會 造 成 能 源 浪 費 〇 1 1 所 以 本 實 施 例 之 裝 置 爲 了 有 效 利 用 處 理 管 冷 卻 用 線 I 之 乾 淨 空 氣 而 置 設 了 乾 淨 空 氣 之 循 環 電 路 0 空 氣 循 環 電 1 1 路 係 由 管 槽 3 2 0 流 量 檢 測 器 3 2 6 y ilS 濾 器 3 2 7 | 管 3 2 9 所 構 成 〇 管 槽 3 2 0 係 從 排 氣 □ 8 至 流 量 檢 測 J I 器 3 2 6 管 3 2 9 係 被 設 成 於 從 流 量 檢 測 器 3 2 6 至 供 1 1 | 給 □ 0 從 管 3 2 9 起 y 分 岐 管 3 2 5 被 分 岐 » 此 分 岐 管 1 1 3 2 5 設 有 清 淨 空 氣 取 入 用 之 開 閉 閥 3 2 4 0 此 開 閉 閥 1 1 3 2 4 之 驅 動 部 與 流 1: 檢 測 3 2 相 連 接 〇 將 開 閉 閥 3 2 4 1 打 開 » 則 新 的 清 淨 空 氣 被 取 入 循 環 電 路 〇 又 * 於 供 給 □ 7 1 1. 本紙張尺度適用中國國家標率（CNS)A4規格（ 210X297公釐）__ 26 294825 A7 B7 經濟部中央櫺隼局貝工消費合作社印製 五、發明説明（ 24 ) 設 有 閘 門 1 3 a 於 排 氣 □ 8 設 有 閘 門 1 3 b 〇 而 且 9 管 1 1 槽 3 2 0 設 有 熱 轉 換 器 3 2 1 及 風 扇 3 1 6 〇 熱 轉 換 器 1 1 3 2 1 t 係 藉 由 溫 度 控 制 器 2 0 被 控 制 0 在 溫 度 控 制 器 1 | 2 0 之 輸 入 側 連 接 著 熱 電 偶 3 2 8 〇 熱 電 偶 3 2 8 係 設 於 請 先 閱 1 I 熱 轉 換 器 3 2 1 的 下 游 側 管 槽 3 2 0 之 中 0 背 面 1 1 其 次 » 說 明 高 速 熱處 理 爐 之 動 作 0 之 注 意 1 1 I 關 閉 閘 門 1 3 a 1 3 b t 將 承 載 體 5 插 入 處 理 酋 1 事 項 再 1 內 〇 其 次 藉 由 加 熱 器 3 將 處 理 管 1 內 加 熱 至 比 5 0 0 °C 填 寫 1 % 高 之 溫 度 ( 例 如 1 0 0 0 V ) 0 其 次 » 打 開 閘 門 1 3 a 5 頁 _✓ 1 1 1 3 b 使 供 給 □ 7 與 排 氣 □ 8 相 連 通 > 驅 動 風 扇 1 5 » 1 I 1 6 〇 藉 此 > 將 冷 卻 空 氣 導 入 間 隙 2 內 » 處 理 管 1 及 晶 圖 1 I W 被 強 制 冷 卻 至 大 約 5 0 0 °C 0 暫 時 保 持 於 此 溫 度 〇 排 出 訂 I 空 氣 藉 由 熱 轉 換 器 3 2 1 被 冷 卻 後 藉 由 濾 清 器 3 2 7 除 1 1 I 去 不 純 物 或 塵 埃 等 再 回 到 間 隙 2 內 0 1 1 1 又 如 循 環 管 路 3 2 0 3 2 9 內 之 流 量 降 低 則 從 1 1 檢 測 器 3 2 6 來 的 檢 測 信 qpfa Μ 被 傳 送 至 開 閉 閥 3 2 4 使 開 線 1 閉 閥 3 2 4 打 開 0 藉 此 可 使 清 淨 室 內 之 空 氣 補 充 至 循 環 1 1 管 路 3 2 0 3 2 9 內 〇 | 如 上 述 之 處 理 » 在 將 晶 圓 的 溫 度 保 持 在 •~* 定 溫 度 之 狀 I 態 下 對 晶 圓 W 進 行 擴 散 處 理 9 在 此 擴 散 處 理 終 了 之 後 1 1 I 將 電 源 關 掉 » 將 氮 氣 ( N 2 ) 導入處理管1 內進行清洗。 1 1 I 然 後 » 在 處 理 管 1 內 之 溫 度 降 到 一 定 溫 度 ( 2 5 °C ) 之 後 1 1 > 將 承 載 體 5 降 下 » 取 出 晶 圓 W 〇 1 而 且 i 如 圖 2 0 所 示 ♦ 將 2 系 統 之 熱 排 氣 管 線 3 3 1 本紙張尺度適用中國國家橾準（CNS)A4規格（ 210X297公釐）_ 27 A7 B7 五、發明説明（25 ) ，332 ，設於清淨室330，330之間，也可以於此 熱排氣管線331 ，332上連接循環管路320 »熱排 氣管線331 ，332 ，係不同於工場之排氣管線，另外 設置者。 又，如圖21所示，也可以在2個清淨室330 ， 330之間，設置1個系統之熱排氣管線333。如此， 藉由使用熱排.氣管線331 ，332，333 ，而可以共 用複數之熱處理裝置1所使用之冷卻空氣。 I---------：-IS------1T------# (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -28 ~5. ST line Printed by the Employees Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy A7 _____B7_____ 5. Description of the invention (5) FIG. 2 is a sectional block diagram of the high-speed heat treatment furnace of the first embodiment of the present invention. FIG. 3 is a temperature diagram illustrating the temperature control method of the embodiment. Fig. 4 is a cross-sectional block diagram showing a high-speed heat treatment furnace according to a second embodiment of the present invention. Fig. 5 is a graph showing the measured results of the heater temperature TH, the internal temperature of the processing chamber T1, and the wafer temperature Tw during rapid heating. Fig. 6 is a graph showing the measured results of the temperature TH of the heater during the rapid heating, the internal temperature To of the processing chamber, and the temperature Tw of the wafer. Fig. 7 is a cross-sectional view showing a high-speed heat treatment furnace according to a third embodiment of the present invention. Fig. 8 is a cross-sectional view showing the treatment tube of the high-speed heat treatment furnace of the third embodiment. Fig. 9 is a perspective view of a heating unit with its exterior cut. Fig. 10 is a partial cross-sectional view showing the device portion of the heating unit. Fig. 11 shows a partial cross-sectional view of the wafer placed on the ring disk. Fig. 12 shows a partial cross-sectional view illustrating that the wafer on the ring disk is injected with radiant heat. Fig. 13 is a graph showing the temperature characteristics of the crystal diagram on the ring disk and the temperature distribution of the wafer on the non-ring disk. Fig. 14 A is a longitudinal sectional view showing a heat treatment apparatus according to an embodiment of the present invention. Fig. 14 B is a characteristic diagram showing the longitudinal temperature distribution inside the heat treatment apparatus. This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) _ 8 _ (please read the precautions on the back before filling in this page). Ordered by the Ministry of Economic Affairs Central Standard Falcon Bureau employee consumption cooperation A7 B7 five Description of the invention (6) Η15 is a partial cross-sectional view showing the lower part of the enlarged heat treatment device. 0 1 6 is a cross-sectional view showing a heat treatment apparatus according to an embodiment of the present invention. FIG. 17 is a cross-sectional block diagram showing a heat treatment apparatus according to an embodiment of the present invention. _1 8 is a partial cross-sectional view showing the expanded lower part of the heat treatment device. HI 9 is a partial cross-sectional view of the heat treatment device according to an embodiment of the present invention. FIG. 9 and FIG. 20 are cooling circuit diagrams showing the cooling system of the heat treatment device. Figure 2 1 is a cooling circuit diagram showing other cooling systems of the heat treatment device < Examples > Hereinafter, various examples of the present invention will be described with reference to the drawings. As shown in FIG. 2, the heat treatment apparatus of the first embodiment receives a vertical wafer carrier 5 and heat-processes a large number of wafers W at the same time. This heat treatment apparatus is provided with a temperature control system including a temperature controller 20 'to heat-treat the wafer W at a high speed. The heat treatment apparatus includes a processing tube 1 made of quartz, heaters 3a, 3b, 3c, a housing 4 ', and a carrier lifting mechanism 6. A gap 2 is formed between the processing tube 1 and the housing 4, the lower part of the gap 2 communicates with the cold air supply port 7, and the upper part of the gap 2 communicates with the exhaust port 8. The cooling air supply port 7 communicates with the fan 15 via a pipe, and the exhaust port 8 communicates with the fan 16 via a heat exchanger 2 7 and a tube 25. Including fan 1 6 The paper size is applicable to China National Standard (CNS & A4 specifications (210X297mm) (please read the notes on the back before filling this page) -s — the line of the Ministry of Economic Affairs Central Standard Falcon Bureau employee consumption cooperation Duyin A7 B7 5. The exhaust system of the invention (7) is connected to the exhaust pipe 26. The heater of the temperature control device consists of the upper heater 3a, the central heater 3b and The lower heater 3c is composed of heaters 3a, 3b, and 3c of each part, which receive power from the power supply 22. The temperature detection means of the temperature control device is composed of a thermocouple 18a located inside the processing tube 1 above, and The internal central thermocouple 18 b and the internal lower thermocouple 18c are formed. The internal thermocouples 18a to 18c are connected to the input part of the temperature controller 20, and the temperature of the heaters 3 a to 3 c of each part, It is detected by the thermocouple 1 9 a ~ 1 9 c of the heater part, and its detected temperature signal is input to the temperature controller 20. The temperature controller 20 is a microcomputer not shown in the program Remember all the data collected in the experiment in advance In the body 21, according to the memory data and the detected temperature of each part, the power supply 22 is controlled. That is, the wafer temperatures Τιυ, ΤΜ, T1L_ and heater temperature TH in the upper, central and lower parts of the tube 1, It will enter the CPU of the microcomputer. The supply ports 7 are located at 8 places in the lower part of the furnace body 4 and communicate with the annular space 23. These supply ports 7 are connected to the nozzles 2 4 inserted in the gap 2 So that the cooling air supplied by the fan 15 evenly flows into the gap 2. The exhaust port 8 is connected to the exhaust pipe 26 provided in a factory or the like through the gate 13 b and the slot pipe 25 In addition, the slot tube 25 is provided as a heat exchanger 2 7 for cooling to discharge high-temperature exhaust gas to room temperature, and an exhaust fan 1 that smoothly sucks the exhaust gas to the exhaust pipe 26 Between 6》 The reaction gas introduction tube 9 is inserted into the processing tube 1. This reaction gas introduction (please read the precautions on the back and then fill out this page) • ^ / 1 The size of the printed paper applies to the Chinese National Standard (CNS) A4 (210X 297 mm) 10 ^ 04825 A7 B7 Employee consumption of the Central Bureau of Standards of the Ministry of Economic Affairs Cooperative Duprinting 5. Description of the invention (8) The tube 9 is formed with a plurality of equally spaced gas introduction holes 9a. In addition, the processing tube 1 is connected to an exhaust tube 10, which is connected to it by an unillustrated connection. The suction means such as vacuum pump of the exhaust pipe 10 causes the inside of the processing pipe 1 to be sucked into a vacuum 9 The wafer carrier 5 is placed on the quartz cover 1 2 through the thermal insulation cylinder 1 1 The cover 12 is formed to block the lower opening of the processing tube 1. With the 0-type oil ring 12a, the connection between the two 1, 12 is sealed in an airtight state. Next, the temperature control device will be described. First, the gates 13a, 13b that close the supply port 7 and the exhaust port 8 block the supply port 8 and the exhaust port 8 »Then, the wafer carrier 5 is raised by the driving of the elevating mechanism 6 to carry the wafer The body 25 is inserted into the treatment tube 1. Next, the heater power supply 22 is turned on, and the heater 3 a to 3 c is used to heat the processing tube 1 to a temperature higher than a predetermined temperature (500 ° C) (for example, 1000 ° C), and then the gate 13a is opened. , 1 3 b, the supply port 7 and the exhaust port 8 are opened, and at the same time, the supply fan 15 and the exhaust fan 16 ′ are driven to introduce outside air into the gap 2 to forcibly cool the processing tube 1 and the wafer W. As shown in FIG. 3, the wafer temperatures Tiu, TiM, T1L are detected, and the detected temperature signals are transmitted to the temperature controller 20. Based on these signals, the power supply 22 is respectively supplied to the upper heater 3a and the central heating The power supply of the heater 3 b and the lower heater 3 c is controlled. That is, the crystal pattern temperature TltI at the center is the highest ', followed by the crystal temperature at the lower part and the wafer temperature T1U at the upper part. Control the supply heating according to the above conditions (please read the precautions on the back before filling in this page). The paper size of the binding book is applicable to the national standard (CNS) A4 specification (2 丨 0x297mm) -11- A7 B7 Ministry of Economic Affairs Printed by the Central Standard Falcon Bureau Employee Consumer Cooperative Fifth, the invention description (9) The power supply of the device 3 a 3 C makes the heating temperature of the wafer W average 〇1 1 so > in the state of keeping the wafer temperature at a predetermined temperature Next »From the 1 1 reaction gas introduction tube 9, the reaction gas is supplied to the processing tube 1 to perform 1 I, please 1 I, the diffusion treatment of impurities on the surface of the wafer. After this diffusion treatment is completed, the electricity k, Μ 1 I Read 1 Source 2 2 Turn off> Introduce a cleaning gas such as nitrogen (N 2) into the processing tube L back 1¾ 1 | inside »perform cleaning ○ then» Zhuyin 1 event 1 where the temperature in the processing tube 1 drops to a fixed temperature (2 5 ° c) The rear 1 drives the lifting mechanism 6 »The wafer carrier 5 is lowered by 1 again» Take out the wafer W > End the processing operation 0 Fill in the book 1 Next 9 See FIG. 4 FIG. 6 illustrates the second embodiment 0 again t omit the page 1 1 2 The description of the parts common to the first embodiment in the embodiment 〇1 1 As shown in FIG. 4, the temperature control device of the second embodiment is provided with an inversion between the supply 1 | fan 1 5 and the temperature controller 2 0 Inverter 2 8 At the same time 9 Order I Inverter 2 9 1 1 I 0 is also provided between exhaust fan 1 6 and temperature controller 2 0 These inverters 2 8 2 9 have an acceptable slave temperature controller 2 0 1 1 command and then the function of controlling the air volume of the fan 1 5 1 6 〇1 This temperature control device will pass the internal upper thermocouple 1 8 a »line 1 internal central thermocouple 1 8 b and internal lower thermocouple 1 8 C detected 1 | temperature signal is sent to Temperature controller 2 0 〇Temperature controller 2 0 > System I According to the received signal to control the heater power supply 2 2 * Control upper heating 1 1 | Device 2 a 9 Central heater 3 b 9 Lower heater 3 C Temperature ♦ Same as 1 1 to control the frequency of inverter 2 8 2 9 〇 The temperature controller 2 0 1 1 »is to change the rotation speed of supply fan 1 5 and exhaust fan 1 6-side control 1 1 cooling air The supply volume also controls the exhaust volume. 〇1 The temperature of the heaters 3 a »3 b and 3 C» is configured by allocating 1 piece of paper to the standard bidder, the country ’s intermediate use, the Ministry of Economic Affairs, the Central Bureau of Standards, and the employee consumption cooperation Duyin A7 ______B7__ 5. Description of the invention (10) Detected by the thermocouples 1 9 a, 1 9 b and 1 9 c in the heater part near it's detection signal is input to the temperature controller 20. This temperature controller 2 0 'is a built-in microcomputer (not shown) connected to the external memory 2 1. The external memory 21 stores the temperature Tw (TWh, TWni and Twj?) Of the wafers made in the upper part, the central part and the lower part before the actual processing, and the thermocouple 1 9 a to 1 9 c of the heating part The detection temperature T n (T Hh, T Hn ^ THj?) And the detection temperature T I of the built-in thermocouples 18a to 18c (T I h, Tim and T I again). The built-in computer, the program is designed to compare and calculate the detected temperature T 1 and the temperature data of the internal thermocouples from 18 c to 18 c to control the heater power supply 22. Moreover, in the above-mentioned embodiment, the heating means 3a to 3c and the temperature detection means 18 a to 18 c are arranged in three groups, or they may be arranged in two groups or four groups. The temporary wafer DW used for the temperature T w is prepared with a total of 3 wafers for the upper part (DWa), middle part (DW6) and lower part (DWc). The temporary wafers DWa, DWb and DWc for data creation are equipped with wafer thermocouples 30a, 30b and 30c. The detection temperature Twh 'TWm & TWi of the wafer thermocouples 30a, 30b, 30c is input to the temperature controller 20. Next, refer to Fig. 5 and Fig. 6 to explain the case of controlling the wafer temperature T w during the rapid heating time. As shown in FIG. 5, in the past, if the majority of wafers W were heated by heaters 3a, 3b, and 3c to raise the temperature in a short time, the heater temperature TH, the internal temperature of the processing chamber T1, the wafer The temperature TW is the standard of this paper. The Chinese National Standard (CNS) Α4 specification (210X297 mm) 13 (please read the notes on the back before filling in this page), 1T line A7 B7 Ministry of Economic Affairs Central Standard Falcon Bureau Beige Consumer Cooperation Du Yin made five, the invention of the seal (11), as shown in Figure-changes in general. From the figure we can see that the heater temperature Τ Η 9 from the initial 1 1 temperature 2 0 0 ° C to Baiqijing temperature 1 0 0 0 ° C The time required is about 1 1 1 0 minutes 0 and then »after another 10 minutes the wafer temperature TW reaches please λ smell 1 1 giant temperature 1 0 0 0 0 ° C 9 after * the internal temperature of the processing chamber T 1 reaches II g Standard temperature 1 0 0 0 ° C 0 Measurement of these temperatures TWT Η »Τ I Read the back side 1 1 I Result> As long as the structure of the heat treatment furnace used t of the body to be processed Attention to the processing of the fragments 1 | The conditions of the heating means and the like are the same »There are often the same things. 1 Result 0 is 1 Specify the internal temperature at a certain time during the heating Τ 1 > The heater temperature T Η and the wafer temperature TW can be obtained in the same way. Page S_ ^ 1 1 Refer to FIG. 6 to explain the situation of 1 1 when the wafer temperature TW is controlled by the method of this embodiment. ; Before processing »First make the temperature data of 1 billion in 1 billion 1 to 0. First close the supply □ 7 and exhaust □ 8 gate 1 1 I 1 3 a 1 3 b block the supply □ 7 and discharge Air □ 8 〇 Then 1 1 | Install temporary wafers 1 DW a DW b DWC in the upper middle part and lower part of the wafer carrier 5 Load the carrier 5 into the processing tube 1 〇 Line 1 Secondly, temperature control Device 2 0 in temperature The state of the data creation mode 1 1 Set the giant temperature to 1 0 0 0 ° C Turn on the heater power 2 2 1 At the same time «Start the crystal thermocouple 3 0 a 3 0 b and 3 0 C and within! 1 thermoelectric Couple 1 8 a 1 8 b and 1 8 C and heating part thermocouple 1 I 1 9 a »1 9 b and 1 9 C temperature measurement. These thermocouples 3 0 a 1 1 3 0 C 1 8 a 1 8 C And 1 9 a 1 9 C The measured material 1 1 material »is converted into 1 data for temperature control by the microcomputer of the temperature controller 2 0» and then recorded in the memory 2 1 〇 This temperature control data 1 Department 1 This paper scale is applicable to the Chinese National Standard Falcon (CNS> A4 specification (210X297 mm) A7 B7 Printed by the Employee Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs V. Invention description (12) indicates the wafer temperature TW at each moment and The internal temperature T 1 and the heater temperature 1 1 degree T Η between the two Tzhg should be related to the data 9 is equivalent to Figure 5 and Figure 6 1 The temperature graph shown in Figure 1 and then measure until the temperature of wafer W TW reaches II Please 1 1 giant temperature »After collecting the temperature control data 1 read the heater 1 I power supply 2 2 turn off > Lower the wafer carrier 5> Remove the temporary wafer reader 1 IDW aj DW b and DWC 〇 Note 1 1 | After using the temperature control data as described above »Perform the actual processing and then 1 1 1 Action 0 At this time) First »close the gate of supply □ 7 and exhaust □ 8 fill in the book 1 1 3 a > 1 3 b > block supply P 7 and exhaust □ 8 〇 W is loaded on the wafer carrier 5 and then the wafer carrier 5 1 1 is loaded into the processing tube 1. Secondly »The temperature controller 2 0 is set to the state of the actual processing 1 1 mode» Set the standard temperature to turn on the heating Power 2 2 start I Heating 0 At this time, the temperature controller 2 0 monitors the internal temperature T 1 at any time by the internal thermocouple 1 8 a 1 I > 1 8 b and 18 C and then according to the internal temperature 1 1 1 1 1 1 The measurement data of 2 1 controls the heating 1 line 1 3 a 3 b and 3 C temperature to heat the wafer W to the giant temperature 〇 as shown in Figure 6 »If --- side control fan 1 5 1 6 rotation number 1 1 — While controlling the power supply to the heater 3 a 3 b > 3 C »then the heater 1 I temperature T Η > in a short time exceeds the S standard temperature 1 0 0 0 0 ° C 1 then real | The round temperature TW * should reach 1 1 I 1 0 0 0 ° C in about 10 minutes. Because the fan is controlled in accordance with the heating rate 1 5 »1 6 1 1 I rotation number» So > the actual wafer The temperature TW will not be overheated after reaching the giant standard temperature of 1! 1 0 0 0 ° C> but can be maintained at 1 1 0 0 After 0 ° c 〇, the internal temperature T 1 reaches the giant standard temperature 1 This paper scale is applicable to the Chinese national standard (CNS > A4 dike (2 丨 0 > < 297mm) Printed by the Employees ’Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A7 B7 V. Description of the invention (13) 1 000 ° C, the thermal balance is also stable, so the fans 15 and 16 rotate steadily. While maintaining the wafer temperature TW at the target temperature, the reactive gas is supplied into the processing tube 1, and the impurity components are diffused on the surface of the wafer. After the thermal diffusion treatment is completed, the inside of the treatment tube 1 is purged with N 2 gas. When the temperature in the processing tube 1 is cooled to room temperature (for example, 25 ° C), the fans 15 and 16 are stopped, and the wafer carrier 5 is removed from the processing tube 1. According to the above embodiment, the shallow diffusion depth of the wafer W can be well controlled. In addition, the wafers W arranged in the upper part, the central part, and the lower part of the processing tube can be heated evenly without a temperature difference. In addition, the temperature detection means disposed near the wafer detects the internal temperature T1 of the wafer processing gas, controls the heating means based on the detected temperature, and at the same time controls the air supply capacity of the air supply means, so that the crystal can be quickly and accurately Temperature control of the rapid cooling condition of circle W. In this way, productivity and yield can be improved. Next, referring to FIGS. 7 to 13, other embodiments will be described. The heat treatment device shown in Fig. 7 is an oxidation diffusion furnace used for oxidation diffusion treatment of semiconductor wafers. The treatment tube 40 of this oxidation diffusion furnace is easy to pass infrared rays and other radiant heat rays, and is composed of high-purity quartz or sapphire which is hard to produce foreign matter. The open end of the processing tube 40 is connected to a stainless steel base (not shown) to support the processing tube 40. The wall of the processing tube 40 is a double wall 40a, 40b. On the inner wall (please read the precautions on the back before filling in this page), τ This paper size is applicable to the Chinese National Standard (CNS) Α4 specifications (210X297 mm) -16-^ 04825 at Β7 5. Invention description (14) Among 40b, the processing space 42 is formed. In the processing space 42, the carrier 5 placed on the 'warming cylinder 11 is loaded / unloaded. The heat preservation tube 1 1 is placed on the flange cover 12 '. The flange cover 12 is mounted on the elevator arm. The carrier 5 is loaded into the processing chamber 40 from the lower opening 41. The thermal insulation cylinder 11 is connected to a rotating mechanism with a belt 54 (not shown). As shown in FIG. 8, the processing tube 40 is formed from the outside. The tube 40a and the inner tube 40b are formed, and the tubes 40a and 40b form a space 40c between each other. On the open end side, the two tubes 40a, 40b are welded into one body, and the space 40c is closed. This space 40 c is connected to the purging gas introduction pipe 76 and the exhaust pipe 40 d. The tube 70 is attached to the upper part of the processing tube 40, and is open at the space 40c. The tube 4 0 d is attached to the lower part of the processing tube 4 0 and is open at the space 4 0 c. One end of the tube 40 d is connected to an exhaust device (not shown). The Duyin Pipe Co., Ltd. of the Ministry of Economic Affairs, Central Standard Falcon Bureau, Monthly Industry and Consumer Cooperation is connected to a cleaning gas supply source (not shown) containing chlorine or oxygen. In addition, as the cleaning gas, halogen gas other than chlorine gas may be used. In addition, the cleaning gas may be chemically reacted with the gold ions, and then discharged, or the gold ions may be discharged together with nitrogen. From the cleaning gas supply source to the space 40 c, chlorine gas with a volume ratio of 1 to 10% or oxygen with a flow rate of about 5 m3 / min is supplied. In addition, when the above gases are mixed and used, the total setting is set to the supply amount β of 5 to 8 m3 / min. The timing of introducing the gas from the tube 70 is set such that when metal ions occur, for example, it is set in the processing tube The temperature rises, and the period during which the treatment temperature is maintained. In addition, this introduction sequence can also be implemented every time. 17 (please read the notes on the back before filling in this page) This paper standard is applicable to China National Standards (CNS) Α4 specification (210 X 297 public) Ministry of Economic Affairs When the Central Sample Falcon Bureau Employee Consumer Cooperative printed A7 B7 V. Description of the invention (15), however, due to the relationship between the accumulation of gold ions released from the space, when the metal ions occur less, that is, when the temperature is increased or when loading / unloading It is best to avoid the introduction of gas. This is to reduce gas consumption. In addition, a gap is provided between the processing tube 40 and the heating resistor 56, and it is preferable to allow refrigerant such as air to flow into this gap. That is, an air flow from below to above is formed, and the wafer W is forcibly cooled. The tube 50 connected to the gas supply source (not shown) of the processing tube is installed in the processing space 42. The tube 50 is along the inner arm 40b from the bottom to the top of the tube. There is a tube ceiling Opening >> The outer periphery of the processing tube 40 is equipped with a resistance heating element 56. A cylindrical heat insulating material 58 is provided on the outer side of the resistance heating body 56, and the cylindrical heat insulating material 58 supports the resistance heating body 56. Then, an inner wall 52 and an outer wall 64 are provided on the outer periphery of the cylindrical heat insulating material 58, respectively. In the inner shell 6 2 and the outer shell 6 4, a cooling tube 60 that circulates the refrigerant is contained. The resistance heating element is divided into three areas of the top 5 6 a 'middle 5 6 b and the tail 56c. Each area 56a, 56b, 56c is independently temperature-controlled in the space 42 by a temperature controller (not shown) ', so that the area where the wafer W is located is heated evenly. Also, the heat insulating material 5 8 must be matched with the above-mentioned three areas of the top, middle, and tail, and is divided into top, middle, and tail side heat insulating materials 5 8 a, 5 8 b, and 5 8 c. As shown in Fig. 9, the heat-insulating materials 58a, 58b, 58c 'are in the shape of a picture tube formed by combining semi-cylindrical objects. The resistance heating elements 5 6 a, 5 6 b, and 5 6 c are also composed of objects separated from left and right. The thickness of the heat insulation material 5 8 is hoped to be below 4 5mm 'the most ideal --------- ψ ------ IT ------ ^ (Please read the notes on the back first (Fill in this page) This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X 297mm) 18-A7 B7 The Central Standard Falcon Bureau of the Ministry of Economic Affairs, Beihai Consumer Cooperation Co., Ltd. Printed 5. The description of the invention (16) is 2 5 The thickness of the heat insulation material 58 such as this is within a range where the mechanical strength of the machine 11 can be maintained > as thin as possible. 1 1 1 Resistance heating element 5 6 ay 5 6 b > 5 6 C is made of molybdenum silicide (1 I please 1 Μ 0 S i 2: >. In fact, the main component is disilicide First read 1 I 1 1 molybdenum (Μ 0 S i 2: heater (back 1 I Ka ntha 1 Super heating element produced by K an tha 1 company)) > this heating resistor made of molybdenum silicide, note 1 thing 1 its resistance value is very low at normal temperature 9 its resistance value also becomes larger when it becomes high temperature 1 then fill in 1 0 the diameter of the resistance heating element > it is better to be more than 1.5 mm, 6 mm The reasons for the following 0 are: »If the wire diameter d exceeds 6 mm, it cannot be processed. 1 1 When the wire diameter d is less than 1.5 mm, the 1 1 will be easily broken. The surface load of the heating element is set to 1 0 3 0 W / cm 2 at 1 1 1 2 0 0 ° C. The order I is more than the conventional F e C r A 1 plus Heater (maximum surface load at 1 I 1 2 0 0 ° C is 2 W / C m 2) M c) S 2 heater can obtain a number of 1 1 I to ten times the amount of heat generation 〇 Therefore relative to F e C r A 1 heating element 1 1 line 1 0 ° c / min heating rate Μ 0 S i 2 heater can get at least 1 3 0 ° c / min maximum can get 100 ° C / min heating rate. 1 1 As shown in FIG. 9, the resistance heating element 5 6 a, 5 6 b, II 5 6 C system is set in each area along the peripheral surface, and there is a 1-phase wire extending in the longitudinal direction of 1 I »up and down mutually Folded into a U shape and into a continuous shape (1 1 1 down > this shape is called a continuous curved shape »As shown in Figure 10, formed as a continuous performance 1 1 | curved heating resistor 5 6 a ♦ 5 6 b ， 5 6 c, which is installed and held on the inner surface of each broken pad member 5 8 a * 5 8 b, 5 8 c 1 by the staple 1 1 6 6. The staple 6 6 is attached to the heating resistor 5 6a, 5 6b- 1 This paper size is suitable for China Standard (CNS M4 specification (2 丨 0X297mm) The Ministry of Economic Affairs Central Falcon Bureau employee consumption cooperation du printed A7 ___B7_ V. Invention description (π) 5 6 C The upper part, installed on the top of each rebate department, these The heating resistor is suspended and supported. At the same time, at the lower part of the resistor heating elements 56a, 56b, 56c, the straight portions are supported to avoid the bent portions to fix the position. By releasing the lower folded portion of the resistance heating elements 56a, 56b, 56c in this way, the length change in the up and down directions due to the thermal expansion and contraction of the resistance heating elements 56a, 56b, 56c can be tolerated. Furthermore, the resistance heating elements 56a, 56b, 56c, if heated, will produce silicon dioxide (Si 〇2) on the surface, which will have a protective film effect, so it is not easy to break "In this case, it will heat with the resistance The body 56a '56b, 56c directly contacts the surface of the staple 66, and is formed of an inert material that does not interact with silicon dioxide even at a high temperature of, for example, 1 200 ° C, so that the resistance heating body 56a, 56b, 56c' It will not break at the contact part of the staple 66. As the plating material of the staple 66, there are, for example, iron (Fe), copper (Cu), nickel (Ni) and the like. Also, the entirety of the staples 6 6 can also use these materials. As shown in FIGS. 11 and 12, the carrier 5 houses a plurality of wafers W at equal intervals. Each wafer w has its peripheral edge portion supported by the ring disk 54 respectively. The ring disk 54 is provided with a mounting portion 5 4 a and a side wall portion 5 4 b. The height 2 image of the side wall portion 54b is the same as or larger than the thickness T of the wafer W. As indicated by the dotted line in 圚 12, the radiant heat from the heating source is blocked by the adjacent wafer W, which limits the radiant heat reaching the central part of the crystal park W The interval Li is to allow the wafer W to be loaded / unloaded on the transfer arm (not shown) of the placement section to be able to enter and exit the paper. The Chinese standard (CNS) A4 is applicable (210X297 public production) ------ : ---- ^ ------, 玎 ------ ^ · (Please read the notes on the back before filling in this page) -20-Printed by the Consumer Labor Cooperative of the Central Sample Bureau of the Ministry of Economic Affairs A7 _— _B7__ V. The size of the invention description (is). In addition, the width L2 of the side wall portion 5 4 b is a width that can avoid mutual interference when the crystal and the ring disk 54 expand. In Fig. 13, the horizontal axis represents the position seen from the center of the wafer, and the vertical axis represents the wafer temperature profile of the wafer temperature. In the graph, the curve TR represents the result of this example (when the ring disk 54 is used), and the curve TN represents the result of the comparative example (when the ring disk 54 is not used). It can be seen from the circle that the examples have better temperature uniformity in the crystal plane than the comparative examples. The carrier 5 is put into the processing tube 40, and the processing tube 40 is exhausted. Electricity is supplied to the heaters 56a, 56b, 56c, and the wafer W is heated up at a high speed. Furthermore, it is preferable to heat the processing space 42 below 600 ° C before carrying the carrier 5 in. At a temperature of 600 ° C. or lower, the formation rate of the oxide film becomes slow, which is advantageous for improving productivity. On the other hand, the radiant heat of the heater 56 directly passes through the processing tube 10 and enters the wafer_W in the space 42. The conventional structure has a heat soaking member in the middle, but this case does not, so the crystal pattern W in this case heats up faster. The cleaning gas is introduced into the space 40 through the tube 70. When the heaters 56a, 56b, and 56c generate heat, silicon dioxide (5 i 0 2) is generated, and at the same time, metal ions such as Fe'Cu, Na, etc. are generated from the staple 66. These gold tantalum ions pass through the outer tube 40a and enter the space 40c. Furthermore, the gold tantalum ions will attempt to pass through the inner 40b, but will be blocked by the cleaning gas and will be discharged outside through the exhaust pipe 40d. According to this embodiment, the temperature of the cleaning gas itself can also increase the reactivity with the gold ions. Therefore, the paper standard for improving the collection of metal ions is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) _ ~ 'II ------- 1 ------ lτ ----- -# (Please read the precautions on the back before filling out this page) A7 ______B7____ printed by the consumer cooperation of the Central Standard Falcon Bureau of the Ministry of Economic Affairs 5. The invention description (l9) rate becomes possible. In addition, this effect is particularly remarkable in the cooling process. At least when the temperature is lowered, the supply of the cleaning gas is effective. According to this embodiment, the peripheral portion of the wafer can be loaded by the ring disk. Therefore, the thermal capacity of the peripheral portion can be set to be larger than the central portion of the wafer. Therefore, it is possible to prevent the abnormal temperature rise of the peripheral portion generated when the incident radiant heat is shielded by the adjacent semiconductor wafers, and the heat rays incident on the peripheral portion are shielded, so it can be more surely prevented The temperature rises. Furthermore, according to this embodiment, since the thickness of the heat insulating material is thinner than the conventional one, the heat capacity of the processing tube can be reduced, and the temperature change rate of the high-speed heat treatment furnace can be ensured. In addition, the thickness of the heat-insulating material used in the conventional heat treatment furnace is 50 mm or more compared to the 25 mm in this embodiment. As a result of this difference in thickness, the heat radiation in direct contact with the heater can be effectively acted to accelerate the temperature rise of the wafer. Next, referring to Figs. 14A, 14B, and 14C, a vertical heat treatment apparatus of another embodiment will be described. As shown in FIG. 14A, the vertical heat treatment apparatus 80 includes a processing tube 82, a heater 84, and a manifold 86. The processing tube 82 has a coaxial outer tube 1 2 2 and an inner tube 1 2 4 »A heater 8 4 is provided on the outer periphery of the outer tube 1 2 2» As shown in FIG. 15 'manifold 8 6, The treatment tube 8 2 is supported by O-rings arranged at the lower ends of the outer tube 1 2 2 and the inner tube 1 2 4, respectively. This manifold 86 is connected to an inlet pipe 90 for processing gas, an inlet pipe 9 2 for cleaning gas and an exhaust pipe 94 respectively. This paper scale is applicable to China National Standard (CNS) A4 specification (210X297mm) _ 22 _ 'I --------- 4 ------ lτ ------ i (please first Read the precautions on the back and fill out this page) 2 ^ 4825 A7 B7 Printed by the Central Standard Falcon Bureau Beigong Consumer Cooperative of the Ministry of Economic Affairs V. Description of Invention (2〇) 1 Install the carrier lift 8 8 under the manifold 8 6 » With this, the carrier 1 | the body 5 can be lifted up and down, possibly supporting 9 the elevator arm 1 of the carrier elevator 8 8! 1 0 0 its eta is relative to the lower end of the manifold 8 6 □ relative position > with a cover 1 I Please I 1 0 2 0 Read 1 I Read 1 I Elevator arm 1 0 0 »In addition to the cover body 1 0 2» On the back of the cover body 1 Above I 1 0 2 »Equipped with an insulation tube bearing platform 1 0 4 9 This heat preservation tube bears attention 1 thing 1 set 1 0 4 contains the heat preservation tube 1 1 > and the upper end bearing of this heat preservation tube 1 1 Body item 1 is filled with 1 5 is supported. 0 Carrier body 5 and inner tube 1 2 4 are formed by quartz. The peripheral wall part of the flying tube 8 6 and the cover body 1 0 2 of the elevator arm 8 0 are made of aluminum or Aluminium sheet 1 1 alloy 〇 The peripheral wall portion of the manifold 8 6 and the cover body of the elevator arm 1 0 0 1 1 1 0 2 Form a leader that can ensure the average heat conduction in the entire area of the enclosed space 1 I area A heater can be installed on the cover body 1 0 2 to suit the needs. 1 Order I. Heat the cover body 1 0 2. 0 A cooling medium passage 4 for cooling the O-ring 1 1 1 is provided on the wall of the manifold 8 6. 0 1 1 The surface of the manifold 8 6 is electroplated with a silicon-based covering material. The 0-covering 1 covering material is made of silicon dioxide (line 1 S i 0 2) to prevent heavy gold contamination of the wafer W. However, because the surface of the manifold 8 e 5 is formed with a thin 1 I aluminum oxide film> It is just that this oxide film is not enough to contact the high-temperature processing gas 1 1 0, so it can be in the manifold 8 6 The surface of the surface is treated with alumite I i »Then silicon oxide is added on the ingot 0 * The cover material t of the manifold 8 6 is other than 1 1 S i 0 2 · It can also be used / 2 〇3! S i C 1 1 S i 3N 4 0 1 1 as shown in Fig. 1 4 B. 9 A temperature slope is generated in the longitudinal direction of the device. In the conventional device, the temperature ratio T 2 is shown in the temperature curve of the conventional device. A7 B7 printed by the Staff Consumption Cooperative of the Central Falcon Bureau of the Ministry of Economics. V. Description of Invention (21) The temperature of the upper part of the tube is low. In this way, the heat generated by the manifold 86 makes the processing temperature of the processing environment uneven. Therefore, the temperature of the soaking area also becomes unstable. When the temperature of the soaking area becomes unstable, the temperature required to form a thin film also becomes uneven, so that the thin film forming conditions between the wafers W become uneven ~ *. On the other hand, in the device of this embodiment, the temperature of the manifold 86 is maintained at 150 ° C as shown in the temperature curve Tι. This is because the temperature adjustment mechanism is provided in the manifold 86. As the temperature adjustment mechanism, a foreskin heater 12 embedded in the peripheral wall portion of the manifold 86 may be used. This foreskin heater 12 is flexible. In addition, the surface of the manifold 86 is covered with silicon dioxide, so the occurrence of heavy gold ions can be reliably controlled. Also, as shown in Fig. 16, the clearing unit 150 may be provided around the manifold. Such a clearing unit 150 is described in Japanese Patent Application Laid-Open No. 2-87618. That is, the outer tube 1 22 is fixed to the base block 1 5 4 via the outer manifold 15 2, and the inner tube 1 2 4 is fixed to the lower end of the outer manifold 1 5 2 via the inner manifold 1 5 6. Below the base block 154, the outer periphery of the outer manifold 1 5 2 and the inner manifold 1 5 6 and the state below them are provided with a cylindrical container-shaped removal part body 1 5 8. The main body 1 5 8 of the cleaning part is made of aluminum alloy material. The 'members 152, 154' 156, 158 are covered with silicon dioxide (S i 0 2). In addition, an exhaust port 1 6 2 is provided on the side surface of the cleaning unit body 1 5 8, and furthermore, an opening 1 64 which is opened when lifting the carrier elevator 9 8 is formed below. This opening 1 64 is opened and closed by the gate 1 66. The size of the gate paper is applicable to the Chinese National Standard (CNS) A4 (210X297mm) ----- ^ --- '1 ^ ------------ 0 (please read the back (Notes and then fill out this page) -24-A7 B7 Printed by the Consumer Consultative Cooperative of the Central Department of Economics of the Ministry of Economic Affairs V. Description of Invention (22) I Door 1 6 6 is made of aluminum oxide coated with silicon dioxide. 0 1 1 I The structure t like this can also make the temperature distribution in the vicinity of the manifold a 1 1 like 〇N 1 I please 1 1 second »Refer to Figure 1 7 and Figure 1 8 to explain other embodiments of high first reading II Read 1 1 Rapid heat treatment device 0 The same part of this embodiment is the same as the above-mentioned embodiment. The description of 1 ¾ 1 I 1 Ming I is omitted. Note 1 Event 1 The high-speed heat treatment device of this embodiment is based on the manifold 2 1 1 and the cover Body item Fill in 1 1 2 and install a heater 1 4 b 0 on the outer periphery. Install heaters 1 4 a on the outside of the supply pipe 9 and exhaust pipe 10 10 respectively. These heaters 1 4 a »Page 1 1 1 4 b It is formed into a sheet and connected to the power supply 1 4 C < 3 These add 1 1 heater 1 4 a 1 4 b can be covered on the tube 9 1 0 in advance or 1 1 can be wound on the tube 9 1 0 and cover 1 2 not ordered | There is a refrigerant introduction space 1 2 b This refrigerant introduction space 1 2 b is connected to the cooling water storage tank 2 3 2 via 1 I on-off valve 2 3 0 and the pump 2 3 1 1 1 1 The power supply for the heater as shown in Figure 18 1 4 C is controlled by the temperature control line I 2 0. The thermostat 1 is connected to the input side of the temperature controller 2 0 1 2 1 5 〇 The thermocouple 2 1 5 is a 0-ring installed on the manifold 2 1 6 Near I. Detection letter from thermocouple 2 1 5-Enter the temperature controller I 2 0, then send a command signal from the temperature controller 2 0 to the power supply 1 4 borrow 1 1 I by the heater 1 4 a 1 4 b Manifold 2 1 1 is heated in the range of 1 5 0 ° C 1 1 1 2 0 0 ° C 0 Here the heating temperature is controlled at 1 1 1 5 0 ° C • -W 2 0 0 ° C The reason for this is that the reaction product will not be paid 1 on the tube 9 > 1 0 > the inside of the manifold 2 1 1 and the cover 1 2 will not be 1 This paper size is applicable to the Chinese National Standard (€ Milk) VI 4 Specifications (2 丨 0 / 297mm) _25 A7 B7 Printed by the Ministry of Economic Affairs, Central Standards Bureau, Negative Labor and Consumer Cooperation V. Description of the invention (23) 1 The 0-ring 2 1 6 y 1 2 a is thermally damaged. Another 9 can also be added 1 I heater 1 4 a ♦ 1 4 b buried in the tube 9 9 1 0 »Manifold 2 1 1 and cover 1 1 body 1 2 〇 You» as shown in Figure 1 7 dotted line Show »It is also possible to control the on-off valve 2 3 0 of the refrigerant supply system by the temperature controller 1 I please 1 1 2 0. By this I first read I | Read 1 * It can prevent the temperature of the cover 1 2 from exceeding the expected Above the temperature 〇Back 1 I Second »Refer to Figure 1 9 Figure 2 1 Description of other embodiments of high-speed note side 1 1 Hot place Apparatus 0 again »This embodiment is the same as the above-mentioned embodiment. The description item JL is filled in 1 and is omitted. Scripts t The high-speed heat treatment device heats the processing tube 1 to 1 0 0 0 0 X page 'w *' 1 1 after 9 rapid After cooling to 5 0 0 ° C and then to room temperature (approximately 1 1 2 5 ° C), it is necessary to introduce additional cooling air from the supply □ 7 into the space 1 1 2 and then discharge it from the exhaust □ 8 to External 0 to -VA »A strong cooling system like this uses a clean room in a clean room (cl ea η room) 1 I The air cleaning equipment will increase the size of the room. 0 I just clean the air from the row 1 1 1 The air □ is discharged to the outside of the factory, so it will cause energy waste. 1 1 Therefore, the device of this embodiment is provided with a clean air circulation in order to effectively use the clean air of the processing pipe cooling line I Circuit 0 Air circulation circuit 1 1 The system consists of tube slots 3 2 0 Flow detector 3 2 6 y ilS filter 3 2 7 | Tube 3 2 9 〇 Tube slot 3 2 0 is from exhaust □ 8 to flow detection JI 3 2 6 Pipe 3 2 9 is set from flow detector 3 2 6 to supply 1 1 | for □ 0 from pipe 3 2 9 y branch manifold 3 2 5 is divided »the branch manifold 1 1 3 2 5 There is an on-off valve 3 2 4 0 for the intake of clean air. The drive part of this on-off valve 1 1 3 2 4 is connected to the flow 1: detection 3 2. The on-off valve 3 2 4 1 is opened »The new clean air It is taken into the circulation circuit. It is also available for supply. □ 7 1 1. This paper scale is applicable to China ’s National Standard Rate (CNS) A4 (210X297 mm) __ 26 294825 A7 B7 Printed by the Beigong Consumer Cooperative of the Central Falcon Bureau of the Ministry of Economic Affairs V. Description of the invention (24) A gate 1 3 a is provided for the exhaust □ 8 A gate 1 3 b is provided and 9 tubes 1 1 slots 3 2 0 are provided with a heat exchanger 3 2 1 and a fan 3 1 6 〇 The converter 1 1 3 2 1 t is controlled by the temperature controller 2 0 0 The thermocouple 3 2 8 is connected to the input side of the temperature controller 1 | 2 0 〇 The thermocouple 3 2 8 is set in Please read 1 I Downstream side of the heat exchanger 3 2 1 3 2 0 in the middle 0 Back 1 1 Next »Explain the action of the high-speed heat treatment furnace 0 Note 1 1 I Close the gate 1 3 a 1 3 bt Insert the carrier 5 into the processing chief 1 Matter 1. Within 1 second. Next, heat the inside of the processing tube 1 to a temperature higher than 5 0 0 0 ° C by the heater 3 (fill in 1% higher temperature (eg 1 0 0 0 V)) 0 Second »Open the gate 1 3 a 5 Page_ ✓ 1 1 1 3 b Connect the supply □ 7 to the exhaust □ 8> drive the fan 1 5 »1 I 1 6 〇 by this> introduce the cooling air into the gap 2» the processing tube 1 and the crystal 1 IW are Forced cooling to approximately 5000 ° C 0 Temporarily maintained at this temperature. Exhaust I Air is cooled by heat exchanger 3 2 1 by Filter 3 2 7 except 1 1 I to remove impurities or dust etc. and then return to the gap 2 0 1 1 1 Another example is that the flow rate in the circulation line 3 2 0 3 2 9 decreases from 1 1 detector 3 2 6 The test letter qpfa Μ is sent to the on-off valve 3 2 4 to open the line 1 to close the valve 3 2 4 to open 0 so that the air in the clean room can be replenished to the circulation 1 1 pipeline 3 2 0 3 2 9 〇 | As above Treatment »Diffusion of wafer W in the state of keeping the temperature of the wafer at a constant temperature of ~~ * 9 After the end of this diffusion treatment 1 1 I Turn off the power» Introduce nitrogen (N 2) Process tube 1 for cleaning. 1 1 I Then »After the temperature in the processing tube 1 drops to a certain temperature (2 5 ° C) 1 1 > Lower the carrier 5» Take out the wafer W 〇1 and i as shown in Figure 2 0 ♦ 2 Hot exhaust line of the system 3 3 1 This paper standard is applicable to China National Standard (CNS) A4 (210X297 mm) _ 27 A7 B7 V. Description of invention (25), 332, located between clean rooms 330, 330 It is also possible to connect the circulation line 320 to the hot exhaust lines 331, 332 »the hot exhaust lines 331, 332, which are different from the exhaust lines of the factory, and are installed separately. Furthermore, as shown in FIG. 21, one system hot exhaust line 333 may be provided between the two clean rooms 330 and 330. In this way, by using the heat exhaust gas lines 331, 332, and 333, the cooling air used in the plural heat treatment devices 1 can be shared. I ---------:-IS ------ 1T ------ # (Please read the precautions on the back before filling out this page) Printed by the Employee Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs The size of the paper used is in accordance with Chinese National Standard (CNS) A4 (210X 297mm) -28 ~