TW296448B - Active matrix liquid display device and driving method thereof - Google Patents
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Abstract
Description
經濟部中央樣羋局員工消f合作杜印敦 A7 B7 五、發明説明(1 ) 本發明係關於顯示特性及量產性優異之主動矩陣型液 晶顯示裝置及其驅動方法。 目前,主動矩陣型(薄膜電晶體型)液晶顯不裝置被 應用於許多用途上,而希望可更多階度化(全彩色化)。 液晶顯示裝置之顯示方式中’有一種在時間之2片基 板之各對向面形成平面狀顯示電極,將液晶充塡於其間, 於基板面施加垂直方向之電場於液晶層向動作之所謂磁扭 絲狀顯示方式(被稱爲縱電場方式),此方式在工業上已 被實用化。 另一種新方式係如揭示於特公昭6 3 — 2 1 9 0 7號 公報中,在同一基板上形成將電場施加於液晶上之一對電 極,於液晶層上施加平行於基板面之方向之電場而動作之 顯示方式(橫電場方式)。 在薄膜電晶體型液晶顯示裝置中,爲了進行多階度顯 示,將影像信號供給於信號電極之驅動電路,亦即所謂從 信號側驅動I C輸出之電壓,必須具有對應於階度數之多 値輸出位準。例如進行1 6階度顯示時,信號側驅動I C 必須能供給1 6 X 2 (因爲液晶必便進行交流驅動,故各 階度皆需要正極與負極之雙値)=3 2馗之輸出電壓。爲 了使各輸出可供給充分之電流,其輸出級具有運算放大器 ,在本例中需要3 2個運算放大器。該輸出級之運算放大 器其耐壓愈低其形狀愈下,故可縮小信號側驅動I C之形 狀。由於信號側驅動I C之形狀縮小,信號側驅動I C之 量產性較佳,又可縮小顯示裝置之外框形狀。然而爲了達 本紙浪尺度適用中國國家操準(CNS ) A4規格(21〇X297公釐) TL裝 訂------知 (請七閱讀背面之注意事項再填寫本頁) 經濟部中央標率局員工消費合作?t印裝 A7 B7 五、發明説明(2 ) 成此目的,必須降低信號側之輸出電壓之最大電壓。 在上述縱電場方式中,係以對向之一對平面狀透明電 極施加電壓於液晶層’而橫電場方式中係以形成於同一基 板面之一對線狀不透明電極施加電壓,故開口率必然的變 小。因此2個電極間之距離不能太小,2個電極間之距離 與縱電場方式比較變成較大,使得橫電場方式之電場變成 較小。因此,爲了產生相同之電場强度,前者施加於電極 間之電壓必須大於後者。 本發明之目的爲提供一種可陡用實用上十分低之信號 側驅動電路之驅動電壓驅動之橫電場方式之主動矩陣型液 晶顯示裝置,及其驅動方法,及提供一種不會產生污點, 畫質良好之橫電場方式之主動矩陣型液晶顯示裝置及其驅 動方法。 爲達成上述目的,本發明之要旨如下: (1 ) 一種將液晶組成物插入第1與第2基板間’於 第1基板上,由矩陣狀配置之許多掃描電極及信號電極形 成許多像素部,於像素部形成有轉換電晶體元件之主動矩 陣型液晶顯示裝置,其特徵爲,連接於轉換電晶體元件之 像素電極與基準電極上施加於平疔於基板面之電場’以電 極間之電壓將液晶組成物層之液晶分子之長軸方向保持與 基板面平行而使其動作,具有以液晶組成物之定向狀態及 偏光裝置形成明亮狀態與黑暗狀態之元件結構’而且於掃 描電極具有可輸出具備2値以上之非選擇電壓之掃描信號 之驅動裝匱。 本紙浪尺度適用中國國家標隼(CNS ) A4礼格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) i裝_Employees of the Central Sample Agency of the Ministry of Economic Affairs cooperated with Du Yindun A7 B7 5. Description of the invention (1) The present invention relates to an active matrix liquid crystal display device with excellent display characteristics and mass productivity and its driving method. At present, the active matrix type (thin film transistor type) liquid crystal display device is used in many applications, and it is hoped that it can be more stepped (full color). In the display method of the liquid crystal display device, there is a so-called magnetic field in which the flat display electrodes are formed on the opposite surfaces of the two substrates of the time, the liquid crystal is filled in between, and the electric field in the vertical direction is applied to the surface of the substrate. The twisted filament display method (called longitudinal electric field method) has been practically applied in industry. Another new method is disclosed in Japanese Patent Publication No. 6 3-2 1 097. A pair of electrodes that apply an electric field to the liquid crystal are formed on the same substrate, and a direction parallel to the surface of the substrate is applied to the liquid crystal layer. The display method of electric field operation (transverse electric field method). In the thin film transistor type liquid crystal display device, in order to perform multi-level display, the image signal is supplied to the drive circuit of the signal electrode, that is, the voltage output from the signal-side driver IC must have a multi-value output corresponding to the number of steps Level. For example, when performing 16-level display, the signal-side drive IC must be able to supply 16 X 2 (because the liquid crystal must be driven by AC, so each level requires a dual value for the positive and negative electrodes) = 32 output voltage. In order to provide sufficient current for each output, the output stage has an operational amplifier. In this example, 32 operational amplifiers are required. The lower the withstand voltage of the operational amplifier of the output stage, the lower its shape, so the shape of the driving IC on the signal side can be reduced. Since the shape of the signal-side driver IC is reduced, the mass-production of the signal-side driver IC is better, and the shape of the outer frame of the display device can be reduced. However, in order to achieve this standard, the Chinese National Standards (CNS) A4 specification (21〇X297mm) TL binding is used ----- know (please read the precautions on the back and fill in this page) Ministry of Economic Affairs Central Standard Rate Bureau employee consumption cooperation? T printed A7 B7 V. Description of the invention (2) For this purpose, the maximum voltage of the output voltage on the signal side must be reduced. In the above vertical electric field method, a voltage is applied to the liquid crystal layer by a pair of flat transparent electrodes, and in the horizontal electric field method, a voltage is applied to a linear opaque electrode formed on the same substrate surface, so the aperture ratio is inevitable Become smaller. Therefore, the distance between the two electrodes cannot be too small, and the distance between the two electrodes becomes larger compared with the longitudinal electric field method, so that the electric field in the transverse electric field method becomes smaller. Therefore, in order to generate the same electric field strength, the voltage applied between the former must be greater than the latter. The object of the present invention is to provide an active matrix liquid crystal display device which can be driven by a transverse electric field method using a driving voltage of a very low signal side driving circuit, and a driving method thereof, and to provide a stain-free, picture quality Active matrix liquid crystal display device with good transverse electric field method and driving method thereof. In order to achieve the above object, the gist of the present invention is as follows: (1) A liquid crystal composition is inserted between a first and a second substrate on a first substrate, and a plurality of pixel portions are formed by a plurality of scan electrodes and signal electrodes arranged in a matrix, An active matrix liquid crystal display device with a conversion transistor element formed in the pixel portion is characterized in that the pixel electrode and the reference electrode connected to the conversion transistor element are applied to the electric field flat on the substrate surface. The voltage between the electrodes will be The long axis direction of the liquid crystal molecules of the liquid crystal composition layer is kept parallel to the substrate surface to make it operate, and has an element structure in which the liquid crystal composition is oriented and the polarizing device forms a bright state and a dark state. 2 The drive device of the scan signal of the non-selected voltage above the value is scarce. This paper wave scale is applicable to China National Standard Falcon (CNS) A4 format (210X297mm) (please read the precautions on the back before filling out this page) i 装 _
*1T 經濟部中央標準局負工消費合作杜印裝 A7 B7 五、發明説明(3 ) (2 )基準電極係掃描電極,信號電極,像素電極以 外設置之共同電極。 (3)基準電極爲鄰接於像素部之掃描電極之一部分 0 (4 )轉換電晶體元件之臨限値V TH與形成明亮狀態 或黑暗狀態之像素電極與基準電極間之最大電壓V〇 N之關 係可滿足以下數式 V Τ Η〉| V Ο Ν | (5 )轉換電晶體元件之臨限値ν ΤΗ與形成明亮狀態 或黑暗狀態之像素電極與基準電極間之最大電壓V Ο Ν,形 成明亮狀態或黑暗狀態之像素電極與基準電極間之最小電 壓V 〇FF2關係可滿足以下數式* 1T Duo Printing Equipment Co-operation Consumption Cooperative Work, Central Bureau of Standards, Ministry of Economic Affairs A7 B7 V. Description of Invention (3) (2) The reference electrode is a common electrode provided outside the scan electrode, signal electrode, and pixel electrode. (3) The reference electrode is a part of the scan electrode adjacent to the pixel portion. 0 (4) The threshold VTH of the conversion transistor element and the maximum voltage V〇N between the pixel electrode and the reference electrode forming the bright or dark state The relationship can satisfy the following formula: V Τ Η> | V Ο Ν | (5) The threshold voltage ν Τ of the conversion transistor element and the maximum voltage V Ο Ν between the pixel electrode and the reference electrode forming the bright or dark state are formed The relationship between the minimum voltage V FF2 between the pixel electrode in the bright state or the dark state and the reference electrode can satisfy the following formula
Vth〉( I V 〇 N | 一 | V O F F I ) /2 (6 )轉換電晶體元件每一行具有p型,η型之特性 Ο (7 )轉換電晶體元件在1個像素上形成有2個以上 ’至少一個薄膜電晶體元件之源電極或吸電極連接於信號 電曰’至少一個薄膜電晶體元件之源極或吸極連接於後續 之掃描電極。 (8 )轉換電晶體元件在1涸像素上形成有2個以上 太成浪尺度適用中S ®家標準(CNS ) ( 21GX 297公簾)" (請先閱讀背面之注意事項再填寫本頁) 裝 、·ιτVth> (IV 〇N | One | VOFFI) / 2 (6) Each row of the conversion transistor element has p-type, n-type characteristics Ο (7) The conversion transistor element is formed with more than two on one pixel. The source electrode or the sink electrode of a thin film transistor element is connected to the signal electrode. The source electrode or the sink electrode of at least one thin film transistor element is connected to the subsequent scan electrode. (8) The conversion transistor element is formed with more than two Taicheng waves on a single pixel. The applicable S ® family standard (CNS) (21GX 297 public curtain) " (please read the precautions on the back before filling this page ) Outfit, ιτ
• J - A 經濟部中央標準局員工消費合作杜印製 A7 B7 五、發明説明(4 ) ,至少一個薄膜電晶體元件之源極或吸極連接於信號電極 ,至少一個薄膜電晶體元件之源極或吸極經由容量元件連 接於後續之掃描電極。 (9 )設定液晶組成物,摩擦方向,偏光板之配置, 基板間距離,及像素電極與基準電極間之距離,以便使形 成明亮狀態之電壓與形成黑暗狀態之電壓之差成爲5 V以 上0 (1 0 )將掃描信號之非選擇電壓輸出2値以上之驅 動方法。 _ (11) 改變施加於掃描電極之掃描信號之非選擇電 壓,主要以掃描電極與像素電極間之容量改變像素電極之 電壓。 (12) 將施加於掃描電極之掃描信號之非選擇電壓 在全部行中以同振幅,同週期,同相位變化。 (13) 於掃描電極上施加每一幀交替的具有2値之 非選擇電壓,在非選擇期間當中被保持於一定電位之掃描 信號,而且對信號電極輸出傳達每一行之像素電極與基準 電極間之電壓之極性不相同之影像信號。 (14) 將2値之非選擇電塵之電位差設定爲相等於 形成明亮狀態或黑暗狀態之像素電極與基準電極間之最大 電IE V。N,與形成明亮狀態或黑暗狀態之像素電極與基準 電極間之最小電壓V 〇 F F之和。 (15) 將2馗之非選擇電壓之電位差設定爲相等於 形成明亮狀態或黑暗狀態之像素電極與基準電極間之最大 衣錄尺度制巾® g家標準(CNS ) A4規格(210X297^7 --------|_裝----:---一訂-----1-線 (請4?閲讀背面之注意事項再填寫本頁) A7 20G448 __B7 五、發明説明(5 ) 電壓V 〇 N,與形成明亮狀態或黑暗狀態之像素電極與基準 電極間之最小電壓V 〇 F F之和之1 / 2倍。 (16)施加於具有p型轉換電晶體元件之掃描電極 之掃描信號之非選擇電壓之中心電壓高於施加於具有η型 轉換電晶體元件之掃描電極之掃描信號之非選擇電壓之中 心電壓,而且其電位差超過形成明亮狀態或黑暗狀態之像 素電極與基準電極間之最大電壓V ΰΝ。 (1 7 )從掃描電極供給基準電壓。 (1 8 )從掃描電極供給之基準電壓隨著影像信號電 壓之極性改變。 本發明之以下之作用係因爲使用橫電場方式作爲改變 在非選擇期間中供給於掃描電極之掃描信號之非選擇電壓 (斷路電壓),由於像素電極與掃描電極之容量結合使像 素電極之電壓變化之驅動方式而產生,並且由本發明之發 明者發現。 (第1作用) 橫電場方式之像素電極與共同電極間之電容量C LC較 縱電場方式爲小。其理由爲縱電堪方式中’係由像素電極 與共同電極構成平行平板電容量。因此,橫電場方式中’ 像素電極與掃描電極間之電容量C s相對的較像素電極與 共同電極間之電容量Cu爲大,結果,可配合掃描電極之 電壓變化將充分之偏壓施加於像素電極。因此’可減小形 成於像素電極與掃描電極間之電容量元件c s在1個像素 本紙張尺度適用中國國家標窣(CNS ) A4规格(210 X 297公釐) (請先M讀背面之注意事項再填寫本頁) -裝· 丁 、\=° 經濟部中央榡芈局員工消費合作社印製 A 7 B7 經濟部中央標準局員工消費合作社印«. 五、發明説明(6 ) 內儲有之領域之比例,可提高開口率。 (第2作用) 因爲像素電極與共同電極間之電容量C Lc小,故掃描 電極之負載電容量亦減小。因此,在掃描電極上施加調變 電壓之驅動方式其調變波形之失眞小,非常有利。因此, 可減小掃描信號之非選擇電壓之波形之失眞因畫像而改變 之比率。因此,可施加均勻之調變電壓,可抑制串音(朝 橫方向劃線之橫向污點)之發生。 (第3作用) 橫電場方式可利用鄰接之掃描電極作爲基準電極。因 此,可利用共同電極之領域作爲開口部,可提高開口部。 此外,配線電極之交叉點數減少,可減少電極之短路。 爲了以交流驅動液晶,從信號電極將影像信號充電於 基準電極,以便使充電於像素電極之電壓波形成爲交流波 形。然而,使用於主動矩陣型液晶顯示裝置之代表性主動 元件之無定型矽薄膜電晶體(a — A i TFT ),聚矽薄 膜電晶體(P — S i TFT)等具有吸極電流在掃描電壓 爲0 V之附近時開始流通之特性,亦即臨限値電壓V τ H爲 0V附近。因此,若使用掃描電壓之非選擇電壓(偏位準 )作爲基準電極使用時,上述電晶體元件中,即使將負電 壓充電於基準電壓仍不能將之保持。其理由爲,掃描電壓 之斷路位準高於像素電極電値之位準,故臨限馗電壓V Τ Π (請先閱讀背面之注意事項再填寫本頁)• J-A Ministry of Economic Affairs Central Standards Bureau employee consumer cooperation du printed A7 B7 V. Description of the invention (4), the source electrode or the sink electrode of at least one thin film transistor element is connected to the signal electrode, the source of at least one thin film transistor element The electrode or the sink is connected to the subsequent scan electrode via the capacity element. (9) Set the liquid crystal composition, rubbing direction, arrangement of polarizing plates, the distance between the substrates, and the distance between the pixel electrode and the reference electrode, so that the difference between the voltage in the bright state and the voltage in the dark state becomes 5 V or more 0 (1 0) A driving method that outputs the non-selected voltage of the scan signal by 2 or more. _ (11) Change the non-selected voltage of the scan signal applied to the scan electrode. The voltage of the pixel electrode is mainly changed by the capacity between the scan electrode and the pixel electrode. (12) The non-selected voltage of the scan signal applied to the scan electrodes changes with the same amplitude, the same period, and the same phase in all rows. (13) Apply a non-selected voltage with 2 values alternately every frame on the scan electrode, which is held at a certain potential during the non-selected period, and output to the signal electrode to communicate between the pixel electrode and the reference electrode of each row Image signals with different voltage polarities. (14) Set the potential difference of 2 non-selective dusts to be equal to the maximum electrical IEV between the pixel electrode and the reference electrode that form a bright state or a dark state. N, the sum of the minimum voltage V 〇 F F between the pixel electrode forming the bright state or the dark state and the reference electrode. (15) Set the potential difference of the 2 non-selective voltages to be equal to the maximum clothing size between the pixel electrode and the reference electrode forming a bright state or a dark state ® g home standard (CNS) A4 specification (210X297 ^ 7- ------- | _install ----: --- one order ----- 1-line (please 4? Read the precautions on the back and then fill out this page) A7 20G448 __B7 5. Description of the invention ( 5) The voltage V 〇N is 1/2 of the sum of the minimum voltage V 〇FF between the pixel electrode and the reference electrode forming the bright state or the dark state. (16) Applied to the scan electrode having a p-type conversion transistor element The center voltage of the non-selected voltage of the scan signal is higher than the center voltage of the non-selected voltage of the scan signal applied to the scan electrode with the n-type conversion transistor element, and the potential difference exceeds the pixel electrode and the reference forming the bright or dark state The maximum voltage V ΰΝ between the electrodes. (1 7) The reference voltage is supplied from the scan electrode. (1 8) The reference voltage supplied from the scan electrode changes with the polarity of the image signal voltage. The following effect of the present invention is because the transverse electric field is used Way as a change in The non-selection voltage (opening voltage) of the scan signal supplied to the scan electrode during the non-selection period is generated by the driving method in which the capacity of the pixel electrode and the scan electrode combine to change the voltage of the pixel electrode, and was discovered by the inventor of the present invention. 1st effect) The capacitance C LC between the pixel electrode and the common electrode of the horizontal electric field method is smaller than that of the vertical electric field method. The reason is that the vertical electric current method consists of the parallel flat plate capacitance formed by the pixel electrode and the common electrode. Therefore, In the horizontal electric field method, the capacitance C s between the pixel electrode and the scan electrode is relatively larger than the capacitance Cu between the pixel electrode and the common electrode. As a result, a sufficient bias voltage can be applied to the pixel electrode according to the voltage change of the scan electrode . Therefore, the capacitance component cs formed between the pixel electrode and the scanning electrode can be reduced to 1 pixel. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (please read the back of the first (Notes and then fill out this page)-installed · Ding, \ = ° Printed by the Consumer Cooperative of the Central Bureau of Economic Affairs of the Ministry of Economic Affairs A 7 B7 Member of the Central Standards Bureau of the Ministry of Economic Affairs Printed by the consumer cooperative «. V. Description of the invention (6) The ratio of the fields stored in it can increase the aperture ratio. (Second role) Because the capacitance C Lc between the pixel electrode and the common electrode is small, the load power of the scan electrode The capacity is also reduced. Therefore, the driving method of applying the modulation voltage to the scan electrode has a small loss of modulation waveform, which is very advantageous. Therefore, the loss of the waveform of the non-selected voltage of the scan signal can be reduced due to the change of the portrait Therefore, a uniform modulation voltage can be applied to suppress the occurrence of crosstalk (horizontal stains drawn in the horizontal direction). (3rd effect) The adjacent scanning electrode can be used as the reference electrode in the transverse electric field method. Therefore, the area of the common electrode can be used as the opening, and the opening can be increased. In addition, the number of crossing points of the wiring electrode is reduced, which can reduce the short circuit of the electrode. In order to drive the liquid crystal by AC, the image signal is charged from the signal electrode to the reference electrode, so that the voltage waveform charged to the pixel electrode becomes an AC waveform. However, amorphous silicon thin-film transistors (a — A i TFT), poly-silicon thin-film transistors (P — S i TFT), etc., which are representative active elements of active matrix liquid crystal display devices, have an sink current at the scanning voltage The characteristic that starts to flow when it is around 0 V, that is, the threshold value voltage V τ H is around 0V. Therefore, when the non-selected voltage (offset level) of the scan voltage is used as the reference electrode, the above transistor element cannot maintain the negative voltage even if it is charged to the reference voltage. The reason is that the open level of the scanning voltage is higher than the level of the pixel electrode, so the threshold voltage V Τ Π (please read the precautions on the back before filling this page)
L 裝 訂 線 本紙伕尺度適用中國國家標準(CNS ) A4規格(2丨0X297公釐) 經濟部中央標搫局員工消費合作社印製 A7 B7 五、發明説明(7 ) 在〇V左右之電晶體元件成爲斷路狀態,像素電極電値洩 漏成爲掃描電壓之斷路位準。因此,欲以交流驅動液晶, 必須另外設置基準電極,將基準電壓設定爲高於閘極電壓 之斷路位準之高位準。然而,使用具有高臨限値電壓之電 晶體而將掃描電極作爲基準電極,將掃描電壓之偏位準作 爲基準電壓使用,仍可充電並保持負之電壓,可用交流驅 動。本發明之特徵爲,電晶體之臨限値電壓V T H超過施加 於液晶之最大電壓Von或最大電壓VON與最小電壓VOFF 之差之1 / 2。因此,即使施加負電遞於液晶,像素電極 電位不會洩漏,可進行充分之保持動作及交流驅動,而且 可低電壓化。 又因爲將電晶體元件形成爲每一行具有p型,η型特 性,將施加於具有ρ型轉換電晶體元件之掃描電極之掃描 信號之非選擇電壓之中心電壓設定爲較施加於具有η型轉 換電晶體元件之掃描電極之掃描信號之非選擇電壓之中心 電壓更高,其電位差超過形成明亮狀態或黑暗狀態之像素 電極與基準電極間之最大電壓V 〇 Ν,藉此,即使臨限値電 壓V ΤΗ在〇 V附近或0 V,仍能以交流驅動液晶,而且可 低電壓化。 此外,於一個像素上形成2個薄膜電晶體元件,以~ 方之薄膜電晶體元件供給影像信號電壓,以另一方之薄膜 電晶體元件從後續之掃描電極供給基準電壓,即可進行液 晶之交流驅動。另外改變影像信號電壓之極性及基準電壓 ,即可低電壓化。 表紙浪尺度適用中國國家梂準(CNS ) A4g ( 210X297公釐) 10 (請七閱讀背面之注意事項再填寫本頁) -装· .丨線 娌濟部中央標準局負工消费含作社印製 A7 B7五、發明説明(8 ) 以下詳細說明本發明之實施例。 〔實施例1〕 第1圖表示液晶面板之一像素頜域之斷面構造。液晶 面板係由上側基板,下側基板,及充塡於兩者間之間隙之 液晶層所構成。在形於成下側基板之像素電極3與共電極 4間施加電壓而控制形成於兩個電極間之電場,控制液晶 之定向狀態而改變通過面板之背光之透過率。從液晶面板 之背光之相反側觀察時,可藉著控制施加於像素電極與共 同電極間之電壓而觀察到明亮狀態,黑暗狀態或兩者之中 間狀態。像素電極及共同電極朝向垂直於第1圖紙面之方 向成爲線狀的延伸,其間之距離爲1 5 " m。液晶層之厚 度爲4 〃 m,此數値小於像素電極與共同電極間之間隔 1 5 y m,故形成於液晶層中之電場1 〇 1 (電力線〉之 方向大致上朝向第1圖之橫方向(第1圖爲與實際裝置比 較,朝向顯示面板之厚度方向放大之圖)。 第3 1圖爲施加電壓於像素電極3與共同電極4間之 ----------I ^------tT-------il - (請先閲讀背面之注意事項再填寫本頁) ί 及未將差有應 。} 爲 。(5具反 圖 C > 圖電所生 式{ C 之生物發 模。ί 時產成子 之圖及壓間組分 態之 } 電其晶晶 狀時 a 加在液液 向察ί 施而於使 定觀。爲極由, 之.向圖 } 電,用 子橫之 d 同時作 分之時 < 共層互 晶板察及與物相 液面觀}極成之 之晶方 b 電組場 時液下丨素晶電 壓從或。像液與 電爲方圖於於性 加}上之加加異 施 b 從時施施向 未 ί 爲壓位場各 Erh/ iHnA ΙππΠ ΙβπΑ twnA \J/ 驾 imr ,} d 加同將介 時 a ί 施不,之 本紙浪尺度適用中國國家橾準(CNS ) A4規格(2I0X 297公釐)-11 - 經濟部中央橾準局負工消资合作杜印裝 A7 _______ B7_ 五、發明説明(9 ) 而朝電場方向改變其方向。如第1 ,3 1圖所示,於液晶 面板之上下面形成偏光板8 ,由於液晶組成物之折射率各 向異性與偏光板之相互作用,使通過液晶面板之光線之透 過率改變。因此,顯示亮度改變。 第3 2圖表示與電場方向1 0 1形成之界面附近之液 晶分子長軸(光軸)方向1 0 2所形成之角度0lc,及偏 光板之偏光透過軸1 Q 3所形成之角度4P之定義。偏光 板及液晶界面分別在上下設有一對,故視需表示爲4 Ρ τ, 0P2,0LC1,0LC2«。棒狀液晶分子5在未施加電場時, 與像素電極3 ,共同電極4之長度方向(第3 1 (C)正 面圖)成爲微小角度,亦即4 5度S Φ c丨< 9 0度。 第3 1 ,3 2圖中,以箭頭表示界面上之液晶分子長軸定 向(摩擦)方向1 0 3。在上下界面上之液晶分子定向方 向最好爲平行,即亦0 L C i =必L C 2 (=必L C )。液晶組成 物之介電各向界性假定爲正。 第3 3圖爲施加於像素電極與共同電極間之電壓V ^ c 與亮度之關係之特性,亦即所謂之光電特性。縱軸之亮度 係將亮度之最大値設定爲1 Q Q %,而以其相對値表示。 逐漸增加施加電壓時,可形成亮度從電壓V 〇 F F突然的變 强,在到達電壓V 〇 n之前,亮度對施加電壓成爲單調的增 加之特性。 如第1圖所示,於上側基板形成有彩色顯示用彩色減 波器1 1 ,遮斷通過像素周邊部之光線之非控制領域(不 能由施加於像素電極及共同電極間之電壓控制光線透過率 ^紙張尺度適用中國國家揉準(CNSM4iUL格(210X297公釐)-12 - (請先閱讀背面之注意事項再填寫本頁) 丨裝 、-» A7 B7 經濟部中央榡準局貞工消費合作社印装 五、發明説明( 之領域)之 基板表面平 分子之定向 形成在由透 於下側 述之各種配 電晶體(T 於由透明玻 本實施 過硏磨之透 膜電晶體, 定向膜6係 晶5定向。 之摩擦。上 場方向所形 。於各基板 4 . 5,折 ,2 0 〇C ) 物球體分散 "m。因此 〔曰東電工 偏光板之偏 8 方設定與 10) 光線而提高 滑之平坦化 使其朝向一 明玻璃及塑 基板形成像 線,進行施 F T )等。 璃或塑膠等 例中,基板 明玻璃基板 再於其最表 使用聚酰亞 在另一方之 下界面上之 成之角度爲 間挾持介電 射率各向異 之絲狀液晶 於基板間而 A V · d 爲 公司製G 1 光透過軸設 〇 ° (亦即 其正交,亦 對比之 膜1 2 定方向 膠等所 素電極 加於像 與上側 構成之 7係使 。在各 面上形 胺,在 基板上 摩擦方 8 8度 遮光膜 ,及未 之定向 構成之 及共同 素電極 基板相 基板7 用厚度 基板之 成定向 其上面 亦塗抹 向互相 (黑矩陣) 施加電壓時 控制膜6。 基板7上。 電極以外, 之電壓之轉 同的,各構 上° 1 . 1mm 一方之基板 膜6。本實 實施摩擦處 聚酰亞胺而 平行,而且 2 3,使 控制液晶 該構件係 又形成後 換之薄膜 件係形成 ,表面經 上形成薄 施例中之 理而使液 進行同樣 與施加電 請 閱 讀 背 冬 ί 事 項 再 噃IΪ裝 頁,L The binding paper size is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 0X297mm). The A7 B7 is printed by the Employee Consumer Cooperative of the Central Standard Bureau of the Ministry of Economic Affairs. 5. Description of the invention (7) Transistor elements around 0V In the open state, the pixel electrode electrical value leakage becomes the open level of the scanning voltage. Therefore, to drive the liquid crystal with AC, a reference electrode must be additionally provided, and the reference voltage should be set to a high level that is higher than the cutoff level of the gate voltage. However, using a transistor with a high threshold voltage and using the scan electrode as the reference electrode, and using the offset of the scan voltage as the reference voltage, it can still charge and maintain a negative voltage and can be driven by AC. The present invention is characterized in that the threshold voltage V TH of the transistor exceeds 1/2 of the difference between the maximum voltage Von applied to the liquid crystal or the maximum voltage VON and the minimum voltage VOFF. Therefore, even if negative electricity is applied to the liquid crystal, the pixel electrode potential does not leak, sufficient holding operation and AC drive can be performed, and the voltage can be reduced. Also, because the transistor elements are formed to have p-type and n-type characteristics for each row, the center voltage of the non-selected voltage applied to the scan signal of the scan electrode having the p-type conversion transistor element is set to be more than that applied to the n-type conversion The center voltage of the non-selected voltage of the scan signal of the scan electrode of the transistor element is higher, and the potential difference exceeds the maximum voltage V 〇Ν between the pixel electrode forming the bright state or the dark state and the reference electrode, thereby, even if the threshold voltage is limited When V Τ is near 0V or 0 V, the liquid crystal can still be driven by alternating current, and the voltage can be reduced. In addition, two thin film transistor elements are formed on one pixel, the image signal voltage is supplied by the thin film transistor element of the square, and the reference voltage is supplied from the subsequent scan electrode by the thin film transistor element of the other side, and the liquid crystal can be exchanged drive. In addition, change the polarity of the image signal voltage and the reference voltage to lower the voltage. The surface wave scale is applicable to China National Standards (CNS) A4g (210X297mm) 10 (please read the notes on the back of the page and fill out this page)-installed ·. 丨 Negative labor consumption of the Central Standards Bureau of the Ministry of Economic Affairs including social printing System A7 B7 V. Description of the invention (8) The following describes the embodiments of the present invention in detail. [Embodiment 1] FIG. 1 shows a cross-sectional structure of one pixel of the liquid crystal panel. The liquid crystal panel is composed of an upper substrate, a lower substrate, and a liquid crystal layer filling the gap between the two. A voltage is applied between the pixel electrode 3 and the common electrode 4 formed on the lower substrate to control the electric field formed between the two electrodes, and the orientation state of the liquid crystal is controlled to change the transmittance of the backlight passing through the panel. When viewed from the opposite side of the backlight of the liquid crystal panel, a bright state, a dark state, or an intermediate state can be observed by controlling the voltage applied between the pixel electrode and the common electrode. The pixel electrode and the common electrode extend linearly in a direction perpendicular to the first drawing plane, and the distance between them is 15 m. The thickness of the liquid crystal layer is 4 mm, which is smaller than the distance between the pixel electrode and the common electrode of 15 μm, so the direction of the electric field 1 〇1 (electric power line) formed in the liquid crystal layer is generally toward the lateral direction of FIG. 1 (The first picture is an enlarged view toward the thickness direction of the display panel compared with the actual device.) The third picture 1 is the applied voltage between the pixel electrode 3 and the common electrode 4 ---------- I ^ ------ tT ------- il-(Please read the precautions on the back before filling in this page) ί and will not be different.} Yes. (5 reverse picture C > picture electricity The resulting formula {C's biological hair model. Ί when the child is born and the pressure between the composition of the state} When the crystal is crystallized, a is added to the liquid and applied to the inspection to make it conservative. For the very reason, it. To the graph} electricity, when the sub-horizontal d is divided at the same time < the eutectic intercrystalline plate and the liquid phase view of the phase} the crystal side of the polar b electric field field under the liquid crystal voltage from or 。The liquid and electricity are added to the square graph on the nature plus} b from the time applied to the uncompressed pressure field Erh / iHnA ΙππΠ ΙβπΑ twnA \ J / driving imr,} d When a ί Shi no, This paper wave scale is applicable to the Chinese National Standard (CNS) A4 (2I0X 297mm) -11-The Ministry of Economic Affairs Central Bureau of Standards and Labor Duty Printing and Printing Cooperative A7 _______ B7_ V. Description of invention (9) and toward the electric field Change its direction. As shown in Figures 1 and 31, a polarizing plate 8 is formed above and below the liquid crystal panel. Due to the interaction between the refractive index anisotropy of the liquid crystal composition and the polarizing plate, the light passing through the liquid crystal panel is transmitted Therefore, the display brightness changes. Figure 3 2 shows the angle 0lc formed by the long axis (optical axis) direction 1 0 2 of the liquid crystal molecules near the interface with the electric field direction 1 0 1 and the polarization transmission axis of the polarizer 1 The definition of the angle 4P formed by Q 3. The polarizer and the liquid crystal interface are respectively provided with a pair at the top and bottom, so it is expressed as 4 Ρτ, 0P2, 0LC1, 0LC2 «if necessary. When the rod-shaped liquid crystal molecule 5 is not applied with an electric field, With the pixel electrode 3, the longitudinal direction of the common electrode 4 (the front view of the third 1 (C)) becomes a slight angle, that is, 4 5 degrees S Φ c 丨 < 90 degrees. In the 3 1, 3 2 figure, with The arrow indicates the orientation of the long axis of the liquid crystal molecules on the interface Wipe) direction 1 0 3. The orientation direction of the liquid crystal molecules on the upper and lower interfaces is preferably parallel, that is, 0 LC i = must LC 2 (= 必 LC). The dielectric anisotropy of the liquid crystal composition is assumed to be positive. Figure 3 3 shows the characteristics of the relationship between the voltage V ^ c and the brightness applied between the pixel electrode and the common electrode, which is the so-called photoelectric characteristics. The brightness of the vertical axis sets the maximum value of the brightness to 1 Q Q%, which is expressed by its relative value. When the applied voltage is gradually increased, the brightness may suddenly increase from the voltage V 〇 F F. Before reaching the voltage V 〇 n, the brightness becomes monotonously increasing to the applied voltage. As shown in FIG. 1, a color wave reducer 1 1 for color display is formed on the upper substrate to block the uncontrolled area of light passing through the peripheral portion of the pixel (the light transmission cannot be controlled by the voltage applied between the pixel electrode and the common electrode Rate ^ Paper scale is applicable to China National Standard (CNSM4iUL grid (210X297mm) -12-(please read the precautions on the back and then fill out this page) 丨 Installation,-» Printing 5. The orientation of the flat surface molecules on the surface of the substrate of the invention description (in the field) is formed by various power distribution crystals described below (T is a transparent film transistor that has been polished by transparent glass, the orientation film 6 is Crystal 5 orientation. The friction. The shape of the field direction. On each substrate 4.5, folded, 2 0 〇C) object sphere dispersion " m. Therefore [the 8 side of the East Electrician polarizer is set with 10) light and Improving the smoothing of the slide to form a line toward a clear glass and a plastic substrate, and applying FT) etc. In the case of glass or plastic, the substrate and the glass substrate use polyimide on the other side to form an angle at the interface of the other side to hold the filamentous liquid crystal with anisotropic dielectric emissivity between the substrates and AV · D is the company's G 1 light transmission axis is set to 0 ° (that is, its orthogonal and contrasting film 1 2 directional glue and other electrodes are added to the image and the upper side to form a 7 series. The amine is formed on each surface On the substrate, rub the 8-degree light shielding film on the substrate, and the unorientated and common electrode substrate phase substrate 7 with the thickness of the substrate. Orient the upper surface and apply the control film 6 when a voltage is applied to each other (black matrix). 7. If the voltage of the electrodes is the same, the structure of the substrate film is 1. 1mm on each side 6. In this embodiment, the polyimide is rubbed and parallel, and 2 3, the control liquid crystal is formed again. After the replacement of the thin film is formed, the surface is formed on the thin layer of the principle of the embodiment to make the liquid the same as the application of electricity. Please read the details of the winter and then install the page.
U 訂 (0LC1= 8 8 。) 係數各向異性△ ε爲正,其數値爲 性 Α?7 爲 〇. 〇72(589nm 組成物。其間隙d係將球型之聚合 在封\液晶之狀態下保持3 . 9 0 2 8 1 " m。以2片偏光板 22QDU〕挾持面板,將一方之 定爲與摩擦方向形成微小角度,亦 =8 3 ),將另 之狀態。如此可 木紙浪尺度適用中國國家梂準(CNS ) Α4現格(210Χ297公釐)-Π - Μ濟部中央標準局員工消費合作杜印掣 A7 __ B7 五、發明説明(11 ) 產生將施加於本發明之像素之電壓Vlc (像素電極3與共 同電極4間之電壓)從0逐漸增大而使亮度減小之最小値 之特性(第3 3圖)。本實施例中係採用低電壓(V〇ff )時爲黑暗狀態,高電壓時(V。n )爲明亮狀態之正常閉 合特性。Voff爲6. 9V,V〇N爲9. IV。本實施例 中雖然採用正常閉合方式,但亦可爲正常開啓方式。液晶 亦可使用具有負介電各向異性之液晶。 第2圖爲形成於下側基板之液晶層側之各種電極,配 線及TFT之平面配置之圖。1爲掃描電極(閘極),朝 向圖中之橫向方向延伸,互相成爲平行之許多掃描電極。 2爲信號電極(吸極),朝向圖中之縱方向延伸而交叉於 掃描電極,互相成爲平行之許多掃描電極。形成許多組由 互相接近設置之2條信號電極所構成之信號電極之組。在 信號電極之組與相鄰之信號電極之組之間形成有共同電極 4 。各共同電極4係由延伸至圖中之上下方向之成爲骨幹 之部分,及從該骨幹朝向左右彎折延伸之枝部分所構成。 如圖中所示,由信號電極e ,其相鄰之共同電極4 ,及相 鄰於該2個電極之掃描電極1所包圍之領域即爲1個像素 。在各像素中,於掃描電極上形成T F T 1 5 ° 3爲像素 電極(源極),從各T F T成爲倒U字狀彎曲而延伸。像 素電極之一部分重叠於相鄰之掃描電極,而在其部分形成 補助電容量元件1 6。 本實施例中,像素間距在掃描電極方向爲1 1 〇 " m ,在信號電極方向爲3 3 0 "m。電極寬度在跨越於許多 未紙浪尺度適用t國國家標準(CNS ) A4現格(210X 297公釐)~- 14 - ' ---------i ----^---1.-IT-----1 ^ 一 (請先閱讀背面之注意事項再填寫本頁) M濟部中央樣準局員工消費合作社印製 A 7 B7 i、發明説明(12) 像素形成之掃描電極1 ,信號電極2 ,共同電極4爲1 Ο "m,以防止因斷線而產生之線缺陷。一方面,爲了提開 口率,將分別形成於各像素領域之像素電極3及從共同電 極4之骨幹延伸之枝部分之寬度形成爲稍小,分別設定爲 6 a/ m。此外,將橫向之2個畫素形成爲一個共同電極, 將共同電極配線數減半。因此,可將開口率擴大,而且共 同電極4與掃描電極1之交叉部之短路或然率(依存於電 極交叉面積)亦減小。本實施例中,將信號電極數設定爲 6 4 0X3支,掃描電極數爲4 8 0支,共'同電極數爲 9 6 0支。此時像素數成爲1 〇 〇萬個° 第3圖爲將第2圖中之1個像素之部分再放大之圖。 第1圖爲第3圖中沿A — A —線之斷面圖。第4 ,5圖分 別爲第3圖中沿B — B —線,C — C /線之斷面圖。 如第4圖所示,TFT具有反交叉構造’於掃描電極 1上形成閘極絕綠膜(例如氮化矽),在其上面形成無定 型矽層2 2 ,然後與無定型矽層接觸的設置吸極2 ,源極 3 。T F T之吸極,源極分別由信號電極,像素電極所搆 成。在吸極,源極與無定型矽層2 2之間形成有作爲歐姆 式接觸層之η +型無定型碎層(未圖不)°本實施例中’ 以同一金屬材料(例如A j?)形成信號電極’像素電極3 ,及共同電極4。 如第5圖所示,在掃描電極13與像素電極3之間挾 持閛極絕緣膜9而形成補助電容量元件1 6。本實施例中 之補助電容量元件之面積較習用之縱電場方式時小許多, 本紙浪尺度通用中國國家標芈(CNS ) A4現格(210X 297公釐)-15 _ —HI— ^^^^1 Hi 1 11 L tln (f (讀t閲讀背面之注意事項再填寫本頁) 訂 線 v C 4 4 8 A7 __—_B7_ 五、發明説明(I3 ) 其電容値爲Cs二2 Ο Ο ί F。 本實施例中,係以前行之掃描電極及像素電極構成補 助電容量元件。但亦可由後行之掃描電極及像素電極構成 。此外,以橫方向鄰接之2個像素共用於電極之骨幹部分 ,但亦可於每一像素設設置共同電極,不會影響本發明之 效果。 以下說明電路結構及驅動波形。 第6圖表示本發明液晶顯示裝置之電路結構。2 1爲 顯示領域,在其橫方向形成有許多掃描電極1 ,在其縱方 經濟部中央標準局員工消費合作社印^ (請先閱讀背面之注意事項再填寫本頁) 向形成有許多信號電極2及共同電極,而在掃描電極與信 號電極之各交叉部形成有TFT。TFT之閘極G連接於 掃描電極,吸極D連接於信號電極。在T F T之源極S與 共同電極4之間形成有液晶電容量C L c,在源極S與前行 之掃描電極之間形成有補助電容量C s。第1圖所示之像 素電極3 ,共同電極4及液晶層形成電容量C L c。補助電 容量C s係在掃描電極1之掃描信號電壓從選擇電壓移轉 成非選擇電壓時,抑制經由T F T之閘極-源極間電容量 C c s混入像素電極3之電壓之場穿越電壓時所必須之電容 量,對C c s需要充分大之容量(例如1 0倍)。 第6圖中,18爲掃描電極驅動電路,將控制TFT 之導通與不導通狀態之掃描電壓與後述之調變電壓’從圖 之上方朝向下方依次施加於各掃描電極(線依次掃描)° 1 9爲信號電極驅動電路。供給各信號電極需要顯示:之影 像信號。在掃描電極施加TFT之導通電壓後,連接於該 木纸張尺A適用中國國家#孪(CNS ) A4说格(210X 297公釐)-16 - A7 B7 五、發明説明(l4 ) 掃描電極之T F T成爲導通狀態,供給於信號電極之影像 信號經由T F T施加於構成液晶電容量C α之像素電極。 17爲控制掃描電極驅動電路18及信號電極驅動電路 1 9之動作之控制電路,2 Q爲將電壓供給於共同電極之 共同電極驅動電路。 本發明之特徵爲,使用可輸出3値以上輸出之驅動器 LS I作爲掃描電極驅動用電路1 8 ,或從掃描電極驅動 用電路1 8輸出之電壓値爲3値以上。U set (0LC1 = 8 8.) The coefficient anisotropy △ ε is positive, its value is Α? 7 is 0.072 (589nm composition. The gap d is the polymerization of the spherical type in the seal \ liquid crystal Maintain 3. 9 0 2 8 1 " m. Hold the panel with two polarizing plates 22QDU], set one of them to form a slight angle with the rubbing direction, also = 8 3), and the other state. The wooden paper wave scale is applicable to the Chinese National Standard (CNS) Α4 present grid (210Χ297mm) -Π-ΜBJC Central Standards Bureau employee consumption cooperation Duyin A7 __ B7 V. Invention description (11) The production will be imposed In the pixel of the present invention, the voltage Vlc (the voltage between the pixel electrode 3 and the common electrode 4) gradually increases from 0 to minimize the brightness (Figure 33). In this embodiment, a low voltage (Vff) is used as a dark state, and a high voltage (V.n) is used as a normal closing characteristic in a bright state. Voff is 6.9V, V〇N is 9. IV. Although the normal closing method is adopted in this embodiment, it may be the normal opening method. As the liquid crystal, liquid crystal with negative dielectric anisotropy can also be used. Fig. 2 is a plan view of various electrodes, wiring, and TFTs formed on the liquid crystal layer side of the lower substrate. 1 is a scanning electrode (gate electrode), which extends in the lateral direction in the figure and becomes a plurality of scanning electrodes parallel to each other. 2 is a signal electrode (sink), which extends in the longitudinal direction of the figure and crosses the scan electrodes, and many scan electrodes become parallel to each other. A plurality of groups of signal electrodes composed of two signal electrodes arranged close to each other are formed. A common electrode 4 is formed between the group of signal electrodes and the group of adjacent signal electrodes. Each common electrode 4 is composed of a portion that extends into the backbone in the up-and-down direction in the figure, and a branch portion that extends from the backbone toward left and right. As shown in the figure, the area surrounded by the signal electrode e, its adjacent common electrode 4, and the scan electrode 1 adjacent to the two electrodes is one pixel. In each pixel, T F T 1 5 ° 3 is formed as a pixel electrode (source) on the scan electrode, and extends from each T F T into an inverted U-shape. One part of the pixel electrode overlaps with the adjacent scan electrode, and the auxiliary capacitance element 16 is formed on the part. In this embodiment, the pixel pitch is 1 1 0 " m in the direction of the scanning electrode and 3 3 0 " m in the direction of the signal electrode. The width of the electrode is applicable to the national standard of China (CNS) A4 (210X 297mm) in the span of many paperless scales ~-14-'--------- i ---- ^ --- 1.-IT ----- 1 ^ 1 (please read the precautions on the back before filling in this page) A 7 B7 i, invention description (12) formed by pixels printed by the Employee Consumer Cooperative of the Central Prototype Bureau of the Ministry of Economy and Economy The scanning electrode 1, the signal electrode 2, and the common electrode 4 are 1 Ο " m to prevent line defects due to wire breakage. On the one hand, in order to increase the aperture ratio, the widths of the pixel electrodes 3 formed in each pixel area and the branch portions extending from the backbone of the common electrode 4 are formed to be slightly smaller, and set to 6 a / m, respectively. In addition, two pixels in the horizontal direction are formed as a common electrode, and the number of common electrode wiring is halved. Therefore, the aperture ratio can be enlarged, and the probability of short circuit (depending on the electrode crossing area) of the intersection of the common electrode 4 and the scan electrode 1 is also reduced. In this embodiment, the number of signal electrodes is set to 6 4 0X3, the number of scanning electrodes is 4 8 0, and the number of common electrodes is 9 6 0. At this time, the number of pixels becomes 10 million °. FIG. 3 is a diagram in which the part of one pixel in FIG. 2 is further enlarged. Figure 1 is a cross-sectional view along line A-A-in Figure 3. Figures 4 and 5 are the cross-sectional views along line B-B-, C-C / in Figure 3, respectively. As shown in FIG. 4, the TFT has an anti-crossing structure. A gate green film (for example, silicon nitride) is formed on the scan electrode 1, an amorphous silicon layer 2 2 is formed thereon, and then contacts the amorphous silicon layer Set the source 2 and source 3. The absorber and source of T F T are composed of signal electrode and pixel electrode, respectively. Between the sink, the source and the amorphous silicon layer 22 is formed as an ohmic contact layer η + type amorphous broken layer (not shown) ° In this embodiment 'with the same metal material (eg A j? ) Form a signal electrode 'pixel electrode 3, and a common electrode 4. As shown in FIG. 5, the auxiliary electrode 9 is sandwiched between the scan electrode 13 and the pixel electrode 3 to form the auxiliary capacitance element 16. The area of the auxiliary capacitance component in this embodiment is much smaller than that of the conventional longitudinal electric field method. The standard of this paper wave is the general Chinese National Standard (CNS) A4 (210X 297 mm) -15 _ —HI— ^^^ ^ 1 Hi 1 11 L tln (f (read t read the notes on the back and then fill in this page) Threading v C 4 4 8 A7 __—_ B7_ V. Description of the invention (I3) The capacitance value is Cs 2 2 Ο Ο ί F. In this embodiment, the auxiliary capacitance element is formed by the scanning electrode and the pixel electrode in the front row. However, it can also be composed of the scanning electrode and the pixel electrode in the back row. In addition, two pixels adjacent in the horizontal direction are used as the backbone of the electrode Part, but it can also be provided with a common electrode for each pixel, which will not affect the effect of the present invention. The circuit structure and driving waveform will be described below. FIG. 6 shows the circuit structure of the liquid crystal display device of the present invention. 2 1 is the display field, in A number of scanning electrodes 1 are formed in the horizontal direction, which is printed on the employee consumer cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. (Please read the precautions on the back before filling out this page.) There are many signal electrodes 2 and common electrodes. scanning A TFT is formed at each intersection of the electrode and the signal electrode. The gate G of the TFT is connected to the scan electrode, and the sink D is connected to the signal electrode. A liquid crystal capacitance CL c is formed between the source S of the TFT and the common electrode 4, A supplementary capacitance C s is formed between the source electrode S and the preceding scanning electrode. The pixel electrode 3, the common electrode 4 and the liquid crystal layer shown in FIG. 1 form a capacitance CL c. The supplementary capacitance C s is used for scanning When the scanning signal voltage of the electrode 1 shifts from the selection voltage to the non-selection voltage, the capacitance necessary to suppress the field crossing voltage mixed with the voltage of the gate electrode-source capacitance C cs of the pixel electrode 3 through the TFT. cs needs a sufficiently large capacity (for example, 10 times). In Figure 6, 18 is the scan electrode drive circuit, which controls the scan voltage and the modulation voltage described later of the TFT conduction and non-conduction state from the top to the bottom of the figure Sequentially applied to each scanning electrode (line sequential scanning) ° 1 9 is a signal electrode driving circuit. Supplying each signal electrode needs to display the image signal: After applying the TFT on voltage to the scanning electrode, it is connected to the wooden paper ruler A Use China National #CNS (CNS) A4 said grid (210X 297 mm) -16-A7 B7 5. Description of the invention (l4) The TFT of the scanning electrode is turned on, and the image signal supplied to the signal electrode is applied to the liquid crystal via the TFT The pixel electrode of capacitance C α. 17 is a control circuit that controls the operation of the scan electrode drive circuit 18 and the signal electrode drive circuit 19, and 2Q is a common electrode drive circuit that supplies a voltage to the common electrode. The present invention is characterized by, As the scan electrode driving circuit 18, a driver LSI capable of outputting 3 or more values is used, or the voltage value output from the scan electrode driving circuit 18 is 3 or more.
信號電極驅動電路14係可施加包含畫像資訊之電壓 波形施加於信號電極2之電路。信號電壓波形之最大振幅 VDPP (第 7 圖之 VDH— VDL)爲 AV (第 3 3 圖:AV =V ON — V OFF)。本寅施例中,於共同電極施加一定電壓 0 第7圖表示本實施例之驅動電路所輸出之驅動波形。 第7 ( a )爲由掃描電極驅動電路1 8施加於第i 1個掃 描電極之掃描信號波形V〇( i — 1 ),第7 ( b )圖爲The signal electrode driving circuit 14 is a circuit that can apply a voltage waveform including portrait information to the signal electrode 2. The maximum amplitude VDPP of the signal voltage waveform (VDH—VDL in Figure 7) is AV (Figure 3 3: AV = V ON — V OFF). In this embodiment, a certain voltage is applied to the common electrode. Figure 7 shows the driving waveform output by the driving circuit of this embodiment. The 7th (a) is the scanning signal waveform V〇 (i — 1) applied to the i1th scanning electrode by the scanning electrode driving circuit 18, and the 7th (b) is
Μ濟部中央揉準局員工消f合作社印5L 由掃描電極驅動電路1 8施加於第i個掃描電極之掃描信 號波形Vc( i ),第7 ( c )圖爲由電極驅動電路1 9 施加於第j個信號電極之信號電壓波形V D ( ^,第7 ( d )圖爲施加於共同電極之電壓波形Vc。第7 ( e )圖爲 將上述電壓施加於掃描電極,信號電極,及共同電極時, 施加於形成在第i個掃描電極,第j個信號電極之交叉部 之像素之像素電極3之電壓V s。具有影像資訊之信號波 形施加於信號電極2 ,而掃描信號波形與影像信號波形成 17 --- I - . II- - - I -in HI .- 士^------ I (請t閱讀背面之注意事項再填寫本頁) 丨線 本紙張尺度適用中國國家榡芈(CNS ) A4規格(210X 297公釐) Μ濟部中央標华局Κ工消費合作杜印製 A 7 B7 五、發明説明(15) 爲同步的施加於掃描電極1 。影像信號電壓從信號電極2 經由TFT 1 5傳達至像素電極3 ,而在與共同電極之間 施加電壓於液晶部分。此時,調變供給於掃描電極i之掃 描信號波形V c之非選擇電壓(斷路電壓),當 T F T 1 5成爲斷路狀態時,利用電容量結合改變像素電 極3之電壓,將偏壓V B ( + ) ,v B ( _ )施加於像素電 極4之電壓。在此,V B ( + )表示偶幀(正幀)時之偏 壓,V B (—)表示奇幀(負幀)時之偏壓。如此,使從 像素電極3之電壓V s減去共同電極4之電壓v 〇之電壓値 ’亦即施加於液晶之電壓V = V s — V c顯著的高於不調 變供給於掃描電極之波形Vc之斷路電壓時(一定電位) 之電壓。施加於像素電極3之偏壓之振幅VB(+), V B (-)對於供給於前行之掃描電極1 3之掃描信號波 形V g (丨一1 )之非選擇電壓之變化量△ V G L ( △ v G L (+ ) = Vgl-Vgll 或△VglC — ) = Vc:Lh—Vgl 成爲 如下之關係:5L printed by the Cooperative Society of the Ministry of Economic Affairs, Ministry of Economic Affairs and Industry Cooperative Society. The scan signal waveform Vc (i) applied to the i-th scan electrode by the scan electrode drive circuit 18. The figure 7 (c) is applied by the electrode drive circuit 1 9 The signal voltage waveform VD at the jth signal electrode (^, Figure 7 (d) is the voltage waveform Vc applied to the common electrode. Figure 7 (e) is the application of the above voltage to the scan electrode, signal electrode, and common When the electrode is applied, the voltage V s is applied to the pixel electrode 3 of the pixel formed at the intersection of the i-th scan electrode and the j-th signal electrode. The signal waveform with image information is applied to the signal electrode 2, and the scan signal waveform and the image Signal wave formation 17 --- I-. II---I -in HI .- taxi ^ ------ I (please read the notes on the back and fill in this page)芈 芈 (CNS) A4 specification (210X 297mm) マ テ ィ ン デ ウ ン グ ビ ン デ ウ テ ウ テ ィ デ ウ ン グ テ ィ テ ィ ン グ A 7 B7 V. Description of the invention (15) It is applied to the scan electrode 1 synchronously. The image signal voltage is from The signal electrode 2 is transmitted to the pixel electrode 3 via the TFT 15 and the common electrode A voltage is applied to the liquid crystal portion at this time. At this time, the non-selected voltage (open voltage) of the scan signal waveform V c supplied to the scan electrode i is modulated, and when the TFT 15 becomes the open state, the pixel electrode 3 is changed by the capacitance combination Voltage, the bias voltages VB (+) and v B (_) are applied to the voltage of the pixel electrode 4. Here, VB (+) represents the bias voltage in the even frame (positive frame), and VB (—) represents the odd frame (Negative frame) bias. In this way, the voltage value of the voltage V s of the common electrode 4 minus the voltage V s of the pixel electrode 3, that is, the voltage applied to the liquid crystal V = V s-V c is significantly high The voltage Vb (+) and VB (-) of the bias voltage applied to the pixel electrode 3 are not adjusted when the cut-off voltage (a certain potential) of the waveform Vc supplied to the scan electrode is adjusted. The amount of change of the non-selected voltage of the scanning signal waveform V g (丨 -1) △ VGL (△ v GL (+) = Vgl-Vgll or △ VglC —) = Vc: Lh-Vgl becomes the following relationship:
Vb: (Cs/Ct) △Vgl .........(數 1 ) 在此,Cs表示補助電容量元件1 6之電容量,CT表示 從像素電極3觀察時之總容量値(c s + c L C + C 〇 s + C DS )。因此,將偏壓振幅V n設定爲正常閉合時成爲Vb: (Cs / Ct) △ Vgl ... (number 1) Here, Cs represents the capacitance of the auxiliary capacitance element 16 and CT represents the total capacitance value when viewed from the pixel electrode 3 ( cs + c LC + C 〇s + C DS). Therefore, when the bias amplitude V n is set to be normally closed, it becomes
Vb=V〇ff+AV/2 .........(數 2 ) 木紙浪尺度適用中國國家標準(CNS ) Α4現格(210X297公釐)-18 - .....1 *1 ^itt n^n ml ^ 1 f^i (請t閱讀背面之注意事項再填寫本頁) 、γ5 線 A7 B7 五、發明説明(I6 ) 正常開啓時成爲 V V ΟΝ+ΔΥ ......(數 3 ) 濟 部 中 央 樣 准 局 員 工 消 t 合 印 % 則在形 △ V / 黑暗狀 大振幅 )-,° ( 成黑暗 之電壓 本 之像素 板上, 極與共 之大約 1/1 式時, C G S ) 數1 ) 加充分 本 2 8 . 成明亮狀態 2 (偶幀) 態時供給一 V D P - P (— 若爲奇幀時 狀態時成爲 亦相同)。 實施例之橫 電極3相同 故其液晶容 同電極對向 3 7 0 f F 〇。因此, 將T F T之 設定爲較C ,非選擇電 之偏壓。 實施例中, 6 V ,V 以 時,從信號電極驅動電路1 9供給 之電壓於中央電壓Vd-centek,在形成 △ V / 2 (偶幀時)之電壓即可,其最 VDH=VDL)可減低至AV (第3 3圖 ,形成明亮狀態時成爲一 AV/2 ,形 △ V / 2 ,其極性反轉。表示中間階度 電場方式之液晶顯示元件中,將與線狀 之線狀共同電極4平行的配置於同一基 量Ci_c爲3 3 f F,與將平面狀像素電 的形成液晶電容量之習用之縱電場方式 (相同像素間距時)比較,大約小 若使用從掃描電極施加偏壓之橫電場方 寄生電容量(尤其閘極-源極間容量 s充分的小’則成爲c τ与C s,根據( 壓之變化量直接變成偏壓’可施Vb = V〇ff + AV / 2 ... (number 2) The wooden paper wave scale is applicable to the Chinese National Standard (CNS) Α4 present grid (210X297 mm) -18-..... 1 * 1 ^ itt n ^ n ml ^ 1 f ^ i (please read the notes on the back and fill in this page), γ5 line A7 B7 5. Invention description (I6) becomes VV ΟΝ + ΔΥ when normally open ... .. (Number 3) The% of the employees of the Central Prototype Bureau of the Ministry of Economic Affairs and the total printing is in the shape of △ V / dark-like large amplitude)-, ° (the pixel board that becomes the dark voltage, the total is about 1 / In formula 1, CGS) number 1) add enough book 2 8. In bright state 2 (even frame) state, supply a VDP-P (—it is the same in the case of odd frame state). The horizontal electrodes 3 in the embodiment are the same, so the liquid crystals are opposite to the electrodes 3 7 0 f F 〇. Therefore, the setting of T F T is lower than C and the electrical bias is not selected. In the embodiment, when the voltage is 6 V or V, the voltage supplied from the signal electrode driving circuit 19 is at the central voltage Vd-centek, and it is sufficient to form a voltage of △ V / 2 (in even frame), and the most VDH = VDL) Can be reduced to AV (Figure 3 3, when it is bright, it becomes an AV / 2, shape △ V / 2, its polarity is reversed. In the liquid crystal display device that represents the middle-order electric field method, it will be linear The common electrode 4 is arranged in parallel with the same base amount Ci_c of 3 3 f F. Compared with the conventional longitudinal electric field method (when the same pixel pitch) is used to form the liquid crystal capacitance of a planar pixel, it is about small if applied from the scan electrode The parasitic capacitance of the transverse electric field of the bias voltage (especially the sufficiently small capacitance s between the gate and the source ′ becomes c τ and C s, which can be directly applied to the bias voltage according to
將V 2 (請先閲讀背面之注意事項再填寫本頁)Set V 2 (please read the notes on the back before filling this page)
,V L Η 0 ,V丨)丨丨二2 4 .0 V . V L 丨.= 0 V,V GH V,V D L = 9 . 0 V , 夂紙張尺度適用中國國家橾率(CNS )八4说格(210X297公釐)-19 _ 經濟部中央標準局員工消費合作杜印策 A7 _B7 五、發明説明(17) V cc= 2 2 . 3V。結果,由閘極與源極間之寄生電容量, VL Η 0, V 丨) 丨 丨 2 2 4 .0 V. VL 丨. = 0 V, V GH V, VDL = 9.0 V, the paper scale is applicable to the Chinese National Standard Rate (CNS) 8 4 (210X297 mm) -19 _ Du Yince A7 _B7, the consumer consumption cooperation of the Central Bureau of Standards of the Ministry of Economy V. Invention description (17) V cc = 2 2 .3V. As a result, the parasitic capacitance between the gate and the source
Ccs所造成之電壓變動△Vcs( + ) ,AVCS ( —), △ V B,偏壓v B,液晶施加電壓V L C之有效値V r m S成 爲如表1所示數値。 表1各種電圧値 表示状態 △ Vgs (+) △ Vgs (-) Vb (+) Vb (-) △ Vb (·) △ Vb (+) Vrrns 明 0.44 0.82 7,61 7.61 0.14 0.14 9.11 暗 0.59 0.78 8.31 8.31 0.15 0.15 6.80The voltage variation caused by Ccs △ Vcs (+), AVCS (—), △ V B, bias voltage v B, the effective value V r m S of the liquid crystal applied voltage V L C becomes the value shown in Table 1. Table 1 State of various electrical pressure values △ Vgs (+) △ Vgs (-) Vb (+) Vb (-) △ Vb (·) △ Vb (+) Vrrns Bright 0.44 0.82 7,61 7.61 0.14 0.14 9.11 Dark 0.59 0.78 8.31 8.31 0.15 0.15 6.80
如表1所示,液晶施加電壓Vlc之最大電壓爲9 . 1 1 V ,與形成明亮狀態之電壓V。N相等,最小電壓爲 6 . 8 Ο V,與形成黑暗狀態之電壓V 〇 f F相等,可形成 第3 3圖所示亮度曲線之最大馗與最小値,可形成充分高 之對比8 0 ,而且信號電壓波形之最大振幅V D p - P = V D η 一 V D l = 2 . 9 V可實現低電壓化。 依照本實施例之掃描電極波形,掃描信號電壓之選擇 電壓V G Η,非選擇電壓中,較高之電壓V c L Η必須滿足以 下之條件。 V GH^ V DH + V rn+ V Μ .........(數 4 ) V GLH^ V S1+ V ΤΗ- V Μ .........(數 5 ) 在上式中,V s ,爲第7圖(e )所示之電壓馗’ V s 1 =V d l. — Δ V 〇 s ( — ) — Vn(_) °V.r|1 爲 TFT 匕臨 本紙浪尺度適用中國國家標準(CNS ) A4規格(2丨0X297公釐)-20 - -------——-¾------IT------線、 (讀it-閲讀背面之注意事項再填碎本頁) 經濟部中央櫺準局貞工消費合作社印策 A7 _B7 五、發明説明(IS) 限値,V Μ爲使T F T確實接通/斷路動作之邊緣電壓。 本實施例中,假設νΤΗ爲0,Vth=OV,νΜ= 4而設 定上述電壓。爲了修正直流成分將共同電極電!EVC設定 爲低於中央電壓Vd-CENTER大約△Vc: 0 . 5 V。 與前行之掃描電壓V。(:)從接通電壓V C Η下降至非 選擇電壓VCLH或之時序相差t d之時間差使掃描電 壓vc(l)上昇至接通電壓VCH,與前行之掃描電壓 V 從非選擇電壓V CLL下降至斷路電壓 VCL,或上昇之時序相差t d 2之時間差下降至掃描電壓 之非選擇電壓VCLI1,VCLL。其理爲考慮電壓波形 之失眞。本實施例中,tdl ,td2皆設定爲3vs ( 然而,如本實施例中,補助電容量元件1 6連接於前行之 掃描電極,而且從前行依次掃描時,或補助電容量元件 1 6連接於後行之掃描電極,而且從後行依次掃描時則可 不設置。若補助電容量元件1 6連接於前行之掃描電極, 而且從後行依次掃描時,或補助電容量元件1 6連接於後 行之掃描電極,而且從前行依次掃描時則必要)。 如上所述,液晶電容量只有3 3 f F,補助電容量元 件只有2 0 〇 f ρ,然而對9V之調變電壓(△Vc = △ G L η — V c L := V G L L — V「,匕)可施加大約8 v之偏壓。 因此只要2 . 9 V之極小之V d「- p (第7 ( C )區!)之驅 動電壓即可驅動顯示裝置。因此,可減小最需要電力之信 咸電極驅動電路1 9之消耗電力,可減小整個顯示裝置之 消耗電力。因爲又可減小信號電極驅動電路之晶粒大小, 本紙ft尺度適用 tn.i'^^TCNS) A4^ (21〇X297公慶)~~Γ" 91 :--- (請先閱讀背面之注意事項再填寫本頁) -* A7 ^06448 ____B7___ 五、發明説明(I9) 故顯示面周邊之邊緣之領域減小,可將顯裝置小型化。此 外,顯示面所佔有之比例增大,可提高視認性。同時,因 爲電容量元件小,故電容量元件所造成之開口領域之損失 消失,可形成5 3 %之高開口率,故可提高顯示畫面之亮 度。 1條掃描配線之電容量負載CG可由下式表示。 C G = Μ · { Cs( Cgs+Clc) + Cgs(Cs+Clc 4 } / (Cs+Cgs 十 Clc).........(數 6 ) 上式中,M爲橫方向之總像素數。縱電場方式時,因爲液 晶電容量Clc大,故Ccs<<Ct-c。因此成爲 C G = C s * Clc/ (Cs+Clc).........(數 7 ) 若考慮施加調變電壓△ v 之8 0 %之偏壓時,則成爲 Cs= 4 Clc,Cg 之最小値爲(4 / 5 ) .Clc。一方面 在橫電場方式中,Cgs—Clc<<Cs,成爲As shown in Table 1, the maximum voltage of the liquid crystal applied voltage Vlc is 9.1 1 V, and the voltage V that forms a bright state. N is equal, the minimum voltage is 6.8 V, which is equal to the voltage V 〇f F that forms the dark state, which can form the maximum value and the minimum value of the brightness curve shown in Figure 3 3, which can form a sufficiently high contrast 8 0, Moreover, the maximum amplitude of the signal voltage waveform VD p-P = VD η-VD l = 2.9 V can achieve a low voltage. According to the scan electrode waveform of this embodiment, the selected voltage V G Η of the scan signal voltage and the non-selected voltage, the higher voltage V c L Η must satisfy the following conditions. V GH ^ V DH + V rn + V Μ ......... (number 4) V GLH ^ V S1 + V ΤΗ- V Μ ......... (number 5) In the above formula , V s, is the voltage shown in Figure 7 (e) 'V s 1 = V d l. — Δ V 〇s (—) — Vn (_) ° Vr | 1 is the TFT daggers, the paper wave scale is applicable China National Standard (CNS) A4 specification (2 丨 0X297mm) -20------------- ¾ ------ IT ------ line, (read it-read back Note: Please fill in this page again.) A7 _B7 printed by the Ministry of Economic Affairs, Central Bureau of Economic Development, Jeonggong Consumer Cooperative V. Inventive (IS) Limitation, V Μ is the marginal voltage that enables the TFT to actually turn on / off. In this embodiment, the voltage is set assuming that νΤΗ is 0, Vth = OV, and νΜ = 4. In order to correct the DC component, the common electrode is charged! EVC is set lower than the central voltage Vd-CENTER by approximately △ Vc: 0.5 V. The scanning voltage V with the previous line. (:) The time difference from the turn-on voltage VCH to the non-selection voltage VCLH or the timing difference td causes the scan voltage vc (l) to rise to the turn-on voltage VCH, and the previous scan voltage V to fall from the non-selection voltage V CLL The time difference to the cut-off voltage VCL, or the rising time difference td 2 falls to the non-select voltages VCLI1 and VCLL of the scan voltage. The reason is to consider the loss of voltage waveform. In this embodiment, both tdl and td2 are set to 3vs (however, as in this embodiment, the auxiliary capacitance element 16 is connected to the scanning electrode in the previous row, and when scanning sequentially from the previous row, or the auxiliary capacitance element 16 is connected It is not necessary to scan electrodes in the back row, and it is not necessary to scan sequentially from the back row. If the auxiliary capacitance element 16 is connected to the scan electrode in the front row, and it is sequentially scanned from the back row, or the auxiliary capacitance element 16 is connected to Scan the electrode in the back row, and it is necessary to scan sequentially from the front row). As mentioned above, the liquid crystal capacitance is only 3 3 f F, and the auxiliary capacitance element is only 20 〇f ρ, but for a modulation voltage of 9V (△ Vc = △ GL η — V c L: = VGLL — V “, dagger ) A bias voltage of about 8 V can be applied. Therefore, as long as the driving voltage of V d "-p (region 7 (C)!) Is as small as 2.9 V, the display device can be driven. Therefore, the most needed power can be reduced The power consumption of the Shinsen electrode drive circuit 19 can reduce the power consumption of the entire display device. Because the grain size of the signal electrode drive circuit can also be reduced, the ft scale of this paper applies to tn.i '^^ TCNS) A4 ^ (21〇X297 公 庆) ~~ Γ " 91: --- (please read the precautions on the back before filling in this page)-* A7 ^ 06448 ____B7___ 5. Description of the invention (I9) Therefore, the area around the periphery of the display surface Reduce the size of the display device. In addition, the proportion of the display surface increases, which can improve visibility. At the same time, because the capacitance component is small, the loss of the opening area caused by the capacitance component disappears, which can be formed. 3% high aperture ratio, so it can improve the brightness of the display screen. The capacitance load CG can be expressed by the following formula: CG = Μ · {Cs (Cgs + Clc) + Cgs (Cs + Clc 4) / (Cs + Cgs 十 Clc) ......... (number 6) In the formula, M is the total number of pixels in the horizontal direction. In the vertical electric field method, the liquid crystal capacitance Clc is large, so Ccs < < Ct-c. Therefore, it becomes CG = C s * Clc / (Cs + Clc) ... ...... (Number 7) When considering the application of a bias voltage of 80% of the modulation voltage △ v, it becomes Cs = 4 Clc, and the minimum value of Cg is (4/5) .Clc. On the one hand In the transverse electric field mode, Cgs—Clc < < Cs becomes
Cg= 2 Cgs+Clc ·_·......(數 8 ) 假設C G s = C L C時,成爲C <; = 3 c L f:。如上所述,橫電 場方式之液晶電容量c L C'爲縱電場方式之1 / 1 〇 ,故 C c大約成爲2 . 7倍之數値。通常朝向橫方向劃線之串 ^紙浪尺度適用中國國家樣窣(CNS〉A4規格(210X 297公釐)-22 - tm —^n n^i tn· ^^1» 11 am ϋ (請it-Mt?背面之注意事項再填寫本頁) 訂 線 經濟部中央橾準局Μ工消費合作社印震 經濟郎中失_率局員二消费含咋江屮捉 A7 ___B7 五、發明説明(2〇) 音(橫污點)係因顯示之不同所造成之電壓波形失眞之變 化而發生。尤其在調變掃描電極之電壓’使信號電壓之振 幅變小之軀動方法,掃描電極之電壓波形失眞之變化使實 效偏壓實效的改變。因此,將調變掃描電極之電壓而使電 場之信號電壓之振幅減小之驅動方法與橫電場方式組合, 即可充分的施加偏壓,而且可抑制橫污點之發生。 本實施例中,1支掃描電極之電容量小至6 9 PF。 因此觀察掃描電壓波形之結果,調變電壓幾乎不發生波形 失眞,利用目視不能確認任何橫污點之發生。 〜 如上所述,本實施例中,可使低驅動電壓,高開口率 ,高畫質同時存在。此外,本實施例中,於第3 3圖中顯 示明亮狀態之電壓V〇N與顯示黑暗狀態之電壓V〇FF之差 爲5 V以下,因此可使用在一般用L S I (例如C — MOS位準)用過程中製造之耐壓5V以下之LSI作爲 信號側驅動電路1 9 ,可提高顯示裝置之量產性,降低成 本。 不重曼調變電壓時,亦即,假 設 VDH 二 2 2. 5V,V〇l=4. 3V,則成爲 VDP-P = 18.2乂。本寅施例中爲乂〇卜1,=2.9乂故與不重疊 調變電壓時比較,可將V u 〃 p減低至1 / 6以下。 〔實施例2〕 本實施例中,驅動波形與實施例1不相同。 第8圖表示本實施例之驅動波形。實施例1中,在同 本乡氏張尺度適用中國國家標準(CNS ) ( 210X297公着)~- 23 - '~ (請先閲讀背面之注意事項再填寫本頁) 裝 '11 經濟部中央標準局月工消资合作社印袈 A7 B7五、發明説明(21) —幀內施加之調變電壓△VcL( + ) ,△Vnui —)在全 部掃描線成爲正或負之同一極性。但在本實施例中,在相 鄰之掃描線間其調變電壓之極性互相反轉。因此,成爲施 加於像素電極之電壓Vs之波形極生,在每一行時反轉之 所謂每一行反轉驅動。本實施例中,對應於實施例1之( 數4 ),(數5 )之條件可由下式表示: V GH^ V DH + V TH + V Μ .........(數 9 ) V GL^ V S1+ V ΤΗ - V Μ .........(數 1 〇 ) V GLH^.V S2 + V ΤΗ~~ V χΜ .........(數 1 1 ) 上式中,vs2爲第8圖所示之電壓値,VS2=Vdl — Δ V GS ( + )。假設Vm=4V而設定電壓後,各電壓成 爲 Vd-center: 1 5 · Ο V ’ Vgh= 2 0 . 5 V,Vgl - ? V d η ~ 1 6 . 5V * Vdl— 1 3 6V j Vglh — 9. Ο V » V gll = 9 . ο V » V C= 1 4 . 5V° 閘極 與源極間之寄生電容量C「.s所造成之電壓變動Gs( + ) » Δ V G S ( — ) ,Δν 偏JEV B’施加於液晶之電壓 V C之實數値ν r m s成爲如表2所示數値。 表2各種電圧値 表示状態 厶 VGS (+) 厶 Vgs (-) VB <+) VB (.) △ Vb (-) AVB U) Vrms 明 0.31 0.69 7.61 7.61 0.14 0.14 9.11 暗 0.45 0.64 8.31 8.31 0.15 0.15 6.80 本紙浪尺度通用t國國家橾準(CNS ) A4規格(2丨0X297公釐)-24 _ (請先閲讀背面之注意事項再填寫本寅) 装· 訂 線 A7 B7 經濟部中央橾準局貝工消f合作杜印製 五、發明説明(22) 本實施例中,藉著進行每一行反轉驅動而設定相同邊 緣電壓Vm,仍可將掃描電極之電壓之最大振幅値從 2 8 . 6V減小至2 0. 5V。因此,可減小使用於掃描 側驅動電路1 8之掃描側驅動I C之耐壓及消耗電力。 本實施例除了實施例1之效果以外,又可使用低耐壓 之掃描側驅動I C,可更減小消耗電力。 〔實施例2〕 - 本實施例之像素之電極結構及驅動方式與實施例1不 相同。 第9圖爲下側基板之許多像素之領域之平面構造圖。 第1 0圖爲其1個像素部分之放大圖。第1 1圖爲第1 〇 圖中沿D — D—線之斷面圖。第1 2圖爲本實施例之顯示 裝置之電路圖。 如第9 ,1 2圖所示,將成爲共同電極4之骨幹之配 線形成與掃描電極1平行而拉出至與面板之掃描電極驅動 電路1 8相反側之邊緣,將之共同連接而連接於共同電極 驅動電路2 0。從成爲各共同電極之骨幹之配線朝向上下 方向延伸成爲枝之配線。如此,爲了儘可能實現高開口率 ,將縱方向之鄰接每兩個像素作爲1條共同電極配線,將 共同電極配線數減半。掃描電極1與共同電極4係以相同 之金屬材料形成。 如第1 1圖所示,以像素電極3與共同電極4挾持閘 木紙浪尺度逍用中國國家揉準(CNS ) A4说格(210X297公釐)-25 ' ---------:—裝-- (請Λ,-閱讀背面之注意事項再填寫本頁)Cg = 2 Cgs + Clc · _ · ...... (number 8) When C G s = C L C, it becomes C <; = 3 c L f :. As described above, the liquid crystal capacitance c L C ′ of the transverse electric field method is 1/100 of the longitudinal electric field method, so C c becomes approximately 2.7 times the value. A string usually crossed in the horizontal direction ^ The paper wave scale is applicable to the Chinese national sample (CNS> A4 size (210X 297 mm) -22-tm — ^ nn ^ i tn · ^^ 1 »11 am ϋ (please it- Note on the back of Mt? And then fill out this page) The Central Economic and Trade Bureau of the Ministry of Economics, the Ministry of Economic Affairs, the Meng Consumer Cooperative, Yinzhen Economic Langzhong _The rate of the member of the second consumption, including the Ajiang ___B7. V. Invention description (2〇) Sound ( Horizontal stains) occur due to the change in the voltage waveform caused by the difference in display. Especially in the method of modulating the voltage of the scanning electrode to make the amplitude of the signal voltage smaller, the change in the voltage waveform of the scanning electrode is ineffective. Changes in the effectiveness of the bias voltage. Therefore, combining the driving method of modulating the voltage of the scan electrode to reduce the amplitude of the signal voltage of the electric field and the transverse electric field method can sufficiently apply the bias voltage, and can suppress the occurrence of transverse stains. In this embodiment, the capacitance of one scanning electrode is as small as 6 9 PF. Therefore, as a result of observing the scanning voltage waveform, the waveform of the modulated voltage hardly loses its shape, and the occurrence of any horizontal stains cannot be confirmed visually. ~ As above In this embodiment, low driving voltage, high aperture ratio, and high image quality can coexist. In addition, in this embodiment, the voltage V〇N in the bright state and the voltage V in the dark state are displayed in FIG. 33. 〇 The difference of FF is 5 V or less, so it is possible to use an LSI with a withstand voltage of 5 V or less manufactured in the process of general LSI (for example, C-MOS level) as the signal-side drive circuit 1 9, which can increase the mass production of display devices Reduce the cost. When the voltage is not adjusted, that is, assuming VDH 2 2.5V, V〇l = 4.3V, it becomes VDP-P = 18.2 乂. In this example, it is 乂 〇 卜1, = 2.9. Therefore, compared with the case where the modulation voltage is not overlapped, V u 〃 p can be reduced to less than 1/6. [Embodiment 2] In this embodiment, the driving waveform is different from Embodiment 1. Figure 8 It shows the driving waveform of this example. In Example 1, the Chinese national standard (CNS) (210X297 publication) is applied at the same scale as the local township. ~-23-'~ (Please read the precautions on the back before filling this page ) Installed '11 Monthly Consumers' Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (21) — In-frame application The modulation voltage △ VcL (+), △ Vnui -) in the whole portion of the scan line becomes the same positive or negative polarity. However, in this embodiment, the polarities of the modulation voltages are reversed between adjacent scan lines. Therefore, the waveform of the voltage Vs applied to the pixel electrode is extremely reversed and is reversed every line, so-called inversion driving for each line. In this embodiment, the conditions corresponding to (number 4) and (number 5) in embodiment 1 can be expressed by the following formula: V GH ^ V DH + V TH + V M ... (number 9 ) V GL ^ V S1 + V ΤΗ-V Μ ......... (number 1 〇) V GLH ^ .V S2 + V ΤΗ ~~ V χΜ ......... (number 1 1) In the above formula, vs2 is the voltage value shown in Figure 8, VS2 = Vdl — Δ V GS (+). Assuming that Vm = 4V and set the voltage, each voltage becomes Vd-center: 1 5 · Ο V 'Vgh = 2 0. 5 V, Vgl-? V d η ~ 1 6 .5V * Vdl— 1 3 6V j Vglh — 9. Ο V »V gll = 9. Ο V» VC = 1 4 .5V ° parasitic capacitance between gate and source C "voltage variation caused by .s Gs (+)» Δ VGS (—), Δν bias JEV B 'The real number value ν rms of the voltage VC applied to the liquid crystal becomes the number value shown in Table 2. Table 2 shows the state of various electrical pressure values VGS (+) Vgs (-) VB < +) VB (. ) △ Vb (-) AVB U) Vrms Ming 0.31 0.69 7.61 7.61 0.14 0.14 9.11 Dark 0.45 0.64 8.31 8.31 0.15 0.15 6.80 The standard of the paper wave standard is the national standard of China (CNS) A4 specifications (2 丨 0X297mm) -24 _ (Please read the precautions on the back before filling in the Ben Yin) Binding · Stranding A7 B7 Central Ministry of Economics and Trade Bureau of the Ministry of Industry and Commerce Co., Ltd. Printed in cooperation V. Invention description (22) In this embodiment, by doing each line Reverse driving and setting the same edge voltage Vm can still reduce the maximum amplitude value of the voltage of the scan electrode from 28.6V to 20.5V. Therefore, it is possible to reduce the use of the scanning side drive circuit 18 Withstand voltage and power consumption of the scan-side driver IC. In addition to the effects of Embodiment 1, this embodiment can also use a low-withstand voltage scan-side driver IC, which can further reduce power consumption. [Embodiment 2]- The electrode structure and driving method of the pixels of this embodiment are different from those of Embodiment 1. FIG. 9 is a plan view of the structure of many pixels in the lower substrate. FIG. 10 is an enlarged view of one pixel. 1 1 is a cross-sectional view along line DD in FIG. 10. FIG. 12 is a circuit diagram of the display device of this embodiment. As shown in FIGS. 9 and 12, it will become the common electrode 4. The wiring of the backbone is formed parallel to the scanning electrode 1 and pulled out to the edge opposite to the scanning electrode driving circuit 18 of the panel, and is connected together and connected to the common electrode driving circuit 20. From the wiring that becomes the backbone of each common electrode Wiring extending up and down into branches. In this way, in order to achieve the highest possible aperture ratio, every two adjacent pixels in the vertical direction are used as one common electrode wiring, and the number of common electrode wiring is halved. Scan electrode 1 and common electrode 4 Tie The same metal material is formed. As shown in Figure 11, the pixel electrode 3 and the common electrode 4 are used to hold the wooden paper wave scale and use the Chinese National Standard (CNS) A4 said grid (210X297mm) -25 '- -------:-install-- (please read the notes on the back and fill in this page)
、1T 線 經濟部中央橾準局負工消费合作杜印製 A7 B7 五、發明説明(23 ) 極絕緣模9而形成補助電容體元件1 6。共同電極4係經 由像素電極3 ,信號電極2 ,及閘極絕緣膜9形成於另一 層,故共同電極4與信號電極絕不發生短路,可將兩者之 距離縮小至3 # m。因此,可減小與顯示無關之信號電極 2與其相鄰之共同電極間之領域之面積,因此由像素電極 2與共同電極4之枝部分將像素4分割(實施例1中爲3 分割),因此,與實施例1比較,雖然可減小電極間之間 隙,但可確保與實施例1相同之高開口率。藉著減小電極 間之間隙,可減低施加於電極間之電壓而施加相同大小之 電場於液晶。如上所述,依照本實施例,可維持與實施例 1相同之亮度,而其驅動電壓較實施例1爲低。 因爲將共同電極4形成於鄰接信號電極2之位置,故 來自信號電極2之電場之大部分終止於共同電極4 ’故可 藉著共同電極之屛蔽效果防止信號電極2與像素電極3發 生容量結合,可抑制因信號電極之電壓變動所產生之像素 電極之電壓變動。如此,可抑制縱方向之串音(縱污點) 之發生,可提高顯示品質。 本實施例中,信號電極有6 4 Ο X 3支,掃描電極有 4 8 0支,共同電極有2 4 0支,其總像素數與實施例1 相同,大約爲1 0 0萬個。如此,本實施例與實施例1比 較可大幅度的減少共同電極之數量’故可顯著的減少斷線 或然率,或與其他電極間之短路或然率,可提高製造回板 時之良品率。本實施例中,將成爲共同電極之骨幹之配線 以縱方向之鄰接2像素形成爲共同狀態’但設置於母一像 本紙浪尺度適用中國國家標準(CNS ) A4見格(210X297公釐)-26 一 (請先閱讀背面之注意事項再填寫本頁) -裝. 、1Τ 線 A7 B7 Μ濟部中央樣準局ac;工消費合作钍印装 五、發明説明( 24 ) 1 素 亦 可 達 成 本 發 明 之 效 果 0 i I 第 1 3 rm 圖 表 示 本 實 施 例 之 顯 示 裝 置 之 駆 動 波 形 0 將 掃 I 描 信 號 V G C i - 1 ) , V G ( 1 ) 之 非 選 擇 電 壓 於 每 一 掃 描 期 間 在 - 1 I V G L «與V G L L 之 間 交 替 的 發 生 變 化 0 此 時 1 使 斷 路 電 壓 之 請 先- Μ 1 I I 振 幅 値 1 V G L Η 一 -V G L L 1 與 共 同 電 極 電 壓 之 振 幅 値 IXJ S 背 1 1 1 V C Η — V C L 1 之 數 値 相 同 9 使 像 素 電 極 3 , 掃 描 電 極 1 1 I 意 I 9 1 3 共 同 電 極 4 之 相 對 電 壓 之 關 係 經 常 成 爲 — 定 0 因 事 • 再 1 爲 同 時 調 變 共 同 電 極 之 電 壓 V C |故可使掃描信號之非選 填 1 裝 寫 本 擇 電 之 調 變 相 位 在 全 部 行 上 形 成 爲 同 相 位 〇 因 此 實 施 頁 1 1 例 1 中 之 掃 描 側 驅 動 I C 之 輸 出 需 要 有 4 値 但 在 本 實 施 1 1 例 中 只 要 3 値 即 可 驅 動 故 可 減 小 掃 描 側 驅 動 I C 內 部 之 1 1 電 路 規 模 可 將 掃 描 側 驅 動 I C 小 型 化 0 若 使 用 施 加 調 變 1 訂 電 壓 於 掃 描 側 驅 動 I C 之 接 地 電 壓 或 將 斷 路 電 壓 直 接 輸 1 1 出 之 I C 作 爲 掃 描 側 驅 動 I C 則 可 使 用 2 値 輸 出 之 之 掃 1 I 描 側 驅 動 I C 9 可 更 小 型 化 〇 I 本 實 施 例 除 了 實 施 例 1 之 效 果 以 外 1 又 可 減 低 驅 動 電 線 I 壓 9 又 可 抑 制 縱 方 向 之 串 音 之 發 生 0 又 可 提 高 面 板 之 良 品 1 1 1 率 〇 又 因 爲 可 將 掃 描 側 驅 動 I C 小 型 化 故 可 將 整 個 顯 示 1 1 裝 置 小 型 化 0 1 ί 本 實 施 例 之 驅 動 方 法 又 可 應 用 於 實 施 例 1 之 像 素 構 造 1 ί 中 0 此 時 仍 可 將 掃 描 側 驅 動 I C 小 型 化 〇 1 1 本 實 施 例 中 9 於 每 一 掃 描 期 間 交 替 的 改 變 調 變 電 壓 , 1 I 然 而 於 每 2 個 掃 描 期 間 以 上 , 或 於 每 —. 幀 期 間 交 替 的 改 1 1 變 調 變 電 壓 , 仍 可 產 生 相 同 效 果 0 1 1 1 本紙張尺度適用中圃國家標隼(CNS ) A4規格(210X297公釐)-27 - 經濟部中央橾準局Μ工消费合作社印褽 28 A7 ___ _B7_ 五、發明説明(25 ) 〔實施例4〕 第14圖表示本實施例之液晶顯示裝置之許多像素部 之結構。第1 5圖表示1個像素之放大圖。 本實施例中不設置共同電極4,將前行之掃描電極 1 3作爲對向於像素電極3之基準電極使用。液晶層之液 晶分子之定向,主要係由像素電極3與從前行之掃描電極 1 3朝向直角方向延伸之枝電極間之電場E所控制。本實 施例中係從前行之掃描電極拉出枝電極,-但亦可從後行之 掃描配線拉出。補助電容量元件1 6係以像素電極3與前 行之掃描電極1 3挾持閘極絕綠膜9而形成。因爲前行之 掃描電極1 3係經由閘極絕緣膜設在與信號電極2不同之 層,故可將掃描電極5與信號電極2間之距離縮子爲 3 # m。因爲不設置共同電極,故可將上述實施例之共同 電極配線部之領域作爲開口部使用。如上所述,減小不能 控制光透過狀態之領域之面積,故可將像素4分割而減小 電極間之間隙,但仍可確保超過實施例1 ,實施例3之開 口率。因此,依照本實施例,可更提高亮度,其驅動電壓 較實施例1低。因爲將前行之掃描電極1 3之枝電極鄰接 於信號電極2形成,故來自信號電極2之大部分電場皆終 止於掃描電極1 3之枝電極,故與實施例3相同的,可抑 制因信號電極2之電壓變動所造成之像素電極3之電壓變 動,可抑制縱方向之串音之發生。 第1 6圖爲本實施例之顯示裝置之電路圖。因爲不設 t伕尺度適用中國國家標準(CNS ) A4洗格(210X297公着) (請先閲讀背面之注意事項再填寫本頁) 裝- 訂 線 296448 A7 經濟部中央梂準局W工消費合作杜印袈 B7五、發明説明(26) 置共同電極,故不需要共同電極驅動電路。如此,可省略 共同電極配線及共同電極驅動電路,故與實施例1比較可 提高面板之量產性。 第17圖表示本實施例之驅動波形。(a) , (b) 爲掃描信號電壓,(c )爲信號電電,(d )爲施加於像 素電極之電壓,e爲像素電極與掃描電極間之差電壓。本 實施例中之掃描信號與實施例3相同。因爲施加於像素電 極1之掃描信號電壓中之調變電壓,與作爲基準電壓之施 加於前行之掃描電極13之掃描信號電壓中之調變電壓爲 同一波形,故基準電極與掃描電極之電壓波形之失眞之不 同而造成之調變電壓波形之相位偏差消失,可將偏壓忠實 的反映於液晶施加電壓。 假設在非選擇期間中施加之最大閘極電壓爲V > ,則 如第1 7圖所示,V / = V ◦ N。本實施例中,爲了施加交 流波形於液晶施加電壓V ^ c而控制T F T之臨限値電壓 V τ H,以滿足V τ Η > V 〇 N。如此,以掃描信號之非選擇電 壓爲基準,將負値之液晶施加電壓(_ V )充電於像素 電極,亦可充分的保持動作。本實施例中,將無定型矽膜 厚度薄膜化使其移位至高電壓側,控制閘極臨限値電壓 V Τ Η。臨限値電壓V τ Η係定義爲在 V Τ Η < V c < V D + V Τ Η之範圍內,將吸極電流之平方根 λ/TF對閘極電壓ν c標繪,成爲直線近似化時,該直線與 閘極電壓V c軸之交點之閘極電壓V。。本實施例中,係利 用半導體膜之薄膜化控制閘極臨限値電壓。但亦可利用閘 尺度適用中國國家揉準(CNS )八4礼格(210Χ 297公釐)-29 - (请先M讀背面之注意事項再填寫本頁) -裝. 訂 線 ,哩濟部中央樣準局貝工消f合作社印製 A7 _________B7 五、發明説明(27 ) 極材料,閘極絕綠膜,半導體膜等之材料選擇,摻雜質, 背部通道控制等控制閛極臨限値電壓。亦可利用其中之一 種,或組合予以控制,只要滿足有關閘極臨限値電壓之條 件,即不超超本發明之範疇。 本實施例除了實施例1及實施例3之效果以外,又可 提高亮度,可提高面板之量產性。 尤其使V τΗ超過V ON,即可以掃描信號之非選擇電壓 作爲基準,充電保持於負電壓,可使用交流驅動液晶。因 此耐用時間加長,可提*供不發生殘像現象之高畫質主動矩 陣型液晶顯示裝置。 本實施例之像素結構亦可應用實施例1及2之驅方法 0 〔實施例5〕 本實施例之驅動方法與實施例4不相同。 第1 8圖表示本實施例之驅動波形。本實施例中,於 掃描電極上施加在同一幀內之非選擇電壓爲一定,但於每 一幀改變非選擇電壓値,每一行之相位差爲(1 + 1掃描 期間/ 1個幀)之掃描信號電壓。當施加於前行之掃描電 極1 3之非選擇電壓爲2個非選擇電壓V d Η,v C U中之 較高一方之電壓V c η時,施加負電壓於液晶。若施加於 前行之掃描電極13之非選擇電壓爲較低之一方之電壓 V c L L時,施加影像f言號V η以便施加負電壓於液晶’並於 選擇時間經由T F 丁施加電壓於像素電極。如此’可施加 本紙張尺度適用中國國家揉準(CNS ) A4规格(210X297公釐)-30 - --------(丨裝------訂------線 (請先閱讀背面之注意事項再填寫本頁) 梵濟部t央標準局®:工消f合作社印裝 A7 _ B7 五、發明説明(28 ) 交流驅動波形於液晶。 如第1 8圖所示,本實施例亦需要成爲V<=V〇N/ 可滿足V ΤΗ > V 〇N之T F T之臨限値電壓。又不必如實 施例4所述,每一掃描期間改變非選擇電壓,消耗電力低 ,而且每一行可反轉其極性,可抑制其內爍現象。本實施 例中,藉著使非選擇電壓之較高之電壓V 與較低電壓 VCLL之差VGLH — VCLL等於V〇n+ V〇FF,可使影像信號 電壓之最大振幅V PP-P成爲V ON — V OFF’可與實施例4 相同的實現低電壓化。 本實施例與實施例4比較可減少掃描電極驅動電路之 消耗電力。 〔實施例6〕 第19圖表示本實施例之液晶顯示裝置之驅動波形。 本實施例之驅動波形基本上與實施例5相同,只有將非選 擇電壓之較高電壓VCI^H與較低電壓Vc “之差VCLH — VGLL設定爲(V〇N+V〇FF) / 2與實施例5不相同。因 此,如第1 9 ( C )圖所示影像信號電壓Vd之最大振幅、 1T line Duzhong printed by the Ministry of Economic Affairs Central Bureau of Preservation and Consumer Affairs A7 B7 V. Description of the invention (23) The polar insulating mold 9 forms the auxiliary capacitor element 16. The common electrode 4 is formed on another layer via the pixel electrode 3, the signal electrode 2, and the gate insulating film 9, so the common electrode 4 and the signal electrode never short-circuit, and the distance between the two can be reduced to 3 #m. Therefore, the area of the area between the signal electrode 2 that is not related to display and the adjacent common electrode can be reduced, so the pixel 4 is divided by the branch portion of the pixel electrode 2 and the common electrode 4 (3 division in Embodiment 1), Therefore, compared with Example 1, although the gap between the electrodes can be reduced, the same high aperture ratio as in Example 1 can be ensured. By reducing the gap between the electrodes, the voltage applied between the electrodes can be reduced to apply the same amount of electric field to the liquid crystal. As described above, according to this embodiment, the same brightness as in Embodiment 1 can be maintained, and the driving voltage is lower than in Embodiment 1. Because the common electrode 4 is formed adjacent to the signal electrode 2, most of the electric field from the signal electrode 2 terminates in the common electrode 4 ', so that the signal electrode 2 and the pixel electrode 3 can be prevented from generating capacity by the masking effect of the common electrode In combination, the voltage fluctuation of the pixel electrode due to the voltage fluctuation of the signal electrode can be suppressed. In this way, the occurrence of crosstalk (vertical stain) in the vertical direction can be suppressed, and the display quality can be improved. In this embodiment, there are 6 4 0 X 3 signal electrodes, 4 8 0 scan electrodes, and 2 4 0 common electrodes. The total number of pixels is the same as that in Embodiment 1, about 1 million. In this way, this embodiment can greatly reduce the number of common electrodes compared with Embodiment 1. Therefore, the probability of wire breakage or the probability of short-circuiting with other electrodes can be significantly reduced, which can improve the yield rate when manufacturing backboards. In this embodiment, the wiring that becomes the backbone of the common electrode is formed as a common state with 2 pixels adjacent to each other in the longitudinal direction, but it is set in the mother-like image. The paper scale is applicable to the Chinese National Standard (CNS) A4 see grid (210X297 mm)- 26 1. (Please read the precautions on the back before filling in this page)-installed., 1T line A7 B7 Μ Ministry of Central Prototype Bureau ac; industrial and consumer cooperation Thorium printing and installation V. Description of invention (24) 1 element can also be reached The effect of the present invention 0 i I The first 1 3 rm diagram shows the motion waveform of the display device of this embodiment. The non-selected voltage of the scanning signal VGC i-1) and VG (1) is -1 during each scanning period. IVGL «and VGLL alternately change 0 At this time 1 Please make the breaking voltage first-Μ 1 II Amplitude value 1 VGL Η--VGLL 1 and common electrode voltage amplitude value IXJ S back 1 1 1 VC Η — VCL The number of 1 is the same 9 makes the pixel electrode 3, the scanning electrode 1 1 I meaning I 9 1 3 total The relationship of the relative voltage of the electrode 4 often becomes-fixed 0 due to the fact • 1 is to simultaneously modulate the voltage VC of the common electrode | Therefore, the non-optional filling of the scanning signal 1 can be made. For the same phase. Therefore, the output of the scan-side driver IC in Example 1 needs to have 4 values. However, in this example, only 3 values can be used for driving, so the number of 1 1 circuits inside the scan-side driver IC can be reduced. The size of the scan-side driver IC can be miniaturized. 0 If you use modulation 1 to apply a voltage to the ground voltage of the scan-side driver IC or directly output an open circuit voltage as the IC of the scan-side driver IC, you can use the 2-value output. Scan 1 I scan side driver IC 9 can be more compact. In addition to the effect of embodiment 1, this embodiment can reduce the drive wire I voltage 9 The occurrence of crosstalk in the vertical direction can be suppressed 0 and the good product rate of the panel 1 1 1 can be improved. Since the scan-side driver IC can be miniaturized, the entire display 1 1 device can be miniaturized. 0 1 ί The driving method of this embodiment It can also be applied to the pixel structure 1 in the first embodiment. In this case, the scan-side driver IC can still be miniaturized. 1 1 In this embodiment, 9 alternately changes the modulation voltage during each scanning period. More than 2 scanning periods, or alternately changing between each frame period. 1 1 Changing the modulation voltage can still produce the same effect. 0 1 1 1 This paper scale is applicable to the Zhongpu National Standard Falcon (CNS) A4 specification (210X297 mm) -27-The Ministry of Economic Affairs, Central Bureau of Industry and Commerce, Mgong Consumer Cooperative Printed 28 A7 ___ _B7_ V. Description of the Invention (25) [Embodiment 4] FIG. 14 shows the structure of many pixel portions of the liquid crystal display device of this embodiment. Figure 15 shows an enlarged view of one pixel. In this embodiment, the common electrode 4 is not provided, and the scanning electrode 13 in the preceding row is used as a reference electrode opposed to the pixel electrode 3. The orientation of the liquid crystal molecules in the liquid crystal layer is mainly controlled by the electric field E between the pixel electrode 3 and the branch electrode extending from the forward scanning electrode 13 toward the right angle direction. In this embodiment, the branch electrode is pulled out from the scanning electrode in the front row, but it can also be pulled out from the scanning wiring in the back row. The auxiliary capacitance element 16 is formed by sandwiching the gate electrode green film 9 with the pixel electrode 3 and the scanning electrode 13 on the front side. Since the scanning electrode 13 in the preceding row is provided on a layer different from the signal electrode 2 through the gate insulating film, the distance between the scanning electrode 5 and the signal electrode 2 can be reduced to 3 # m. Since no common electrode is provided, the area of the common electrode wiring portion of the above embodiment can be used as an opening. As described above, the area of the area where the light transmission state cannot be controlled is reduced, so that the pixel 4 can be divided to reduce the gap between the electrodes, but the aperture ratio of the first and third embodiments can still be ensured. Therefore, according to the present embodiment, the brightness can be further improved, and the driving voltage is lower than that of the first embodiment. Since the branch electrode of the scanning electrode 13 in the previous row is formed adjacent to the signal electrode 2, most of the electric field from the signal electrode 2 is terminated by the branch electrode of the scanning electrode 13, so the same as in the embodiment 3 can be suppressed The voltage variation of the pixel electrode 3 caused by the voltage variation of the signal electrode 2 can suppress the occurrence of crosstalk in the vertical direction. FIG. 16 is a circuit diagram of the display device of this embodiment. Because there is no t-scale standard, the Chinese National Standard (CNS) A4 washing grid (210X297 public) is required (please read the precautions on the back before filling out this page) Packing-Stranding 296448 A7 Central Bureau of Economic Affairs of the Ministry of Economic Affairs W Industry and Consumer Cooperation Du Yinhuan B7 5. Description of the invention (26) The common electrode is placed, so no common electrode drive circuit is required. In this way, the common electrode wiring and the common electrode driving circuit can be omitted, so compared with the first embodiment, the mass productivity of the panel can be improved. Fig. 17 shows the driving waveform of this embodiment. (A), (b) is the scanning signal voltage, (c) is the signal electrical power, (d) is the voltage applied to the pixel electrode, and e is the difference voltage between the pixel electrode and the scanning electrode. The scan signal in this embodiment is the same as in Embodiment 3. Because the modulation voltage in the scan signal voltage applied to the pixel electrode 1 is the same waveform as the modulation voltage in the scan signal voltage applied to the scan electrode 13 in the previous row as the reference voltage, the voltages of the reference electrode and the scan electrode The phase deviation of the modulated voltage waveform caused by the difference in the waveform disappears, and the bias voltage can be faithfully reflected in the applied voltage of the liquid crystal. Assuming that the maximum gate voltage applied during the non-selection period is V >, as shown in Figure 17, V / = V ◦ N. In this embodiment, the threshold voltage V τ H of T F T is controlled in order to apply an AC waveform to the liquid crystal application voltage V ^ c to satisfy V τ Η > V 〇 N. In this way, the pixel electrode can be charged by applying a negative voltage (_V) to the pixel electrode based on the non-selected voltage of the scan signal, and the holding operation can be sufficiently maintained. In this embodiment, the thickness of the amorphous silicon film is thinned to shift to the high voltage side, and the gate threshold voltage V Τ Η is controlled. The threshold voltage V τ Η is defined as the square root of the sink current λ / TF plotted against the gate voltage ν c within the range of V Τ Η < V c < VD + V Τ Η to become a straight line approximation When changing, the gate voltage V at the intersection of the straight line and the gate voltage V c axis. . In this embodiment, the thickness of the semiconductor film is used to control the threshold voltage of the gate. However, the gate scale can also be used to apply the Chinese National Standardization (CNS) 84 4 grid (210Χ 297 mm) -29-(please read the precautions on the back before filling this page)-install. Threading, Liji Department Printed by the Central Prototype Bureau Beigongxiao Cooperative Society A7 _________B7 5. Description of the invention (27) Selection of materials for the electrode material, gate green film, semiconductor film, dopant, back channel control and other control limits Voltage. It can also be controlled by one or a combination of them, as long as the conditions related to the threshold voltage of the gate are satisfied, it does not exceed the scope of the present invention. In addition to the effects of Embodiments 1 and 3, this embodiment can increase the brightness and the mass productivity of the panel. In particular, when V τΗ exceeds V ON, the non-selected voltage of the scanning signal can be used as a reference, the charge is maintained at a negative voltage, and the AC can be used to drive the liquid crystal. Therefore, the durability time is longer, and it is possible to provide a high-quality active matrix type liquid crystal display device that does not cause afterimages. The pixel structure of this embodiment can also use the driving methods of Embodiments 1 and 2 0 [Embodiment 5] The driving method of this embodiment is different from Embodiment 4. Fig. 18 shows the driving waveform of this embodiment. In this embodiment, the non-selected voltage applied to the scan electrode in the same frame is constant, but the non-selected voltage value is changed every frame, and the phase difference of each row is (1 + 1 scan period / 1 frame) Scanning signal voltage. When the non-selection voltage applied to the scanning electrode 13 in the previous row is the higher of the two non-selection voltages V d H, v C U, V c η, a negative voltage is applied to the liquid crystal. If the non-selected voltage applied to the scan electrode 13 in the previous row is the lower one of the voltage V c LL, the image f signal V η is applied so as to apply a negative voltage to the liquid crystal 'and the voltage is applied to the pixel via TF D at the selected time electrode. This' can be applied to this paper standard is applicable to China National Standardization (CNS) A4 specifications (210X297 mm) -30--------- (丨 installed ------ ordered ------ line (Please read the precautions on the back before filling in this page.) Central Bureau of Standards of the Fanji Ministry: Printed by ABC Cooperative Society A7 _ B7 V. Description of Invention (28) AC drive waveform on the LCD. As shown in Figure 18 It is shown that this embodiment also needs to be the threshold voltage of the TFT with V < = V〇N / which can satisfy V TH > V ON. It is not necessary to change the non-selection voltage during each scan as described in Embodiment 4, The power consumption is low, and the polarity of each row can be reversed to suppress the flicker phenomenon. In this embodiment, by making the difference between the higher voltage V of the non-selected voltage and the lower voltage VCLL VGLH-VCLL equal to V. n + V〇FF can make the maximum amplitude of the video signal voltage V PP-P become V ON-V OFF 'can achieve the same voltage as in Example 4. Compared with Example 4, this example can reduce the scanning electrode drive circuit Power consumption. [Embodiment 6] FIG. 19 shows the driving waveform of the liquid crystal display device of this embodiment. The driving of this embodiment The waveform is basically the same as that in Embodiment 5, except that the difference VCLH-VGLL of the higher voltage VCI ^ H and the lower voltage Vc of the non-selected voltage is set to (V〇N + V〇FF) / 2 and Embodiment 5 is not The same. Therefore, the maximum amplitude of the image signal voltage Vd as shown in Figure 19 (C)
Vdp-p增大爲(3V〇n— V〇ff) / 2 > 但 TFT 之臨限 値電壓Vth成爲大於VkAV/〗。(V〇N—V〇FF) / 2 ,可將負之最大電壓(一 Von)施加於液晶。因此,與 實施例4 ,5比較,可使用臨限値電壓低之T F T,而且 與非選擇電壓爲1値時之影像信號電壓之最大振幅V D P - P =2 VON比較,可低電壓化(Von+Voff) / 2。本寊 木紙浪尺度適用中國國家標準(CNS ) A4規格(2I0X297公釐)-31 - --------- I 裝-- - 夤 (請先閲讀背面之注意事崎再填寫本I) -tr M濟部中央樣嗥局負工消资合作杜印裝 _B7 五、發明説明(29 ) 施例之驅動方式中,如第3 4圖所示’將0LC之角度設定 爲更大,即可使V〇N 成爲更小,又可使用臨限値 電壓低之TFT,同時可將影像信號電壓低電壓化。 本實施例與實施例4 , 5比較,具有可使用臨限値電 壓低之TFT之效果。 〔實施例7〕 第2 0圖表示本實施例液晶顯示裝置之驅動波形。本 實施例中,於每一行交替的形成P型TFT與η型TFT 。因此,可使用臨限値電壓VTH爲負電壓之TFT。爲了 使臨限値電壓VTH成爲負電壓,具有p型TFT之掃描電 極之非選擇電壓之中心値V c - P必須高於具有η型T F T 之掃描電極之非選擇電壓之中心値VCL-N,而且其電位差 必須超過V〇n+AVs。在此,AVs爲場穿越電壓之最大 値。因此,可將影像信號電壓之最大振幅VDP-P減小至 V〇n+Z^Vs+AV 〇 本實施例與實施例4比較,可使用負電壓臨限値電壓 VTH之T F T,而且可將影像信號電壓低電壓化。 〔實施例8〕Vdp-p increases to (3V〇n-V〇ff) / 2 > However, the threshold value of the TFT Vth becomes greater than VkAV /〗. (V〇N-V〇FF) / 2, the negative maximum voltage (one Von) can be applied to the liquid crystal. Therefore, compared with Examples 4 and 5, a TFT with a low threshold voltage can be used, and compared with the maximum amplitude of the image signal voltage VDP-P = 2 VON when the non-selection voltage is 1 value, the voltage can be reduced (Von + Voff) / 2. The size of this paper is suitable for the Chinese National Standard (CNS) A4 specification (2I0X297mm) -31---------- I installed--夤 (please read the precautions on the back side before filling in this I) -tr M The Ministry of Economic Affairs, Central Bureau of Prosperity and Economic Cooperation, Du Printing Co., Ltd. _B7 V. Description of the invention (29) In the driving method of the embodiment, as shown in Figure 34, 'set the angle of 0LC to be more Larger, can make V〇N smaller, and can use TFT with low threshold voltage, at the same time can reduce the image signal voltage. Compared with Examples 4 and 5, this embodiment has the effect that a TFT with a low threshold voltage can be used. [Embodiment 7] FIG. 20 shows the driving waveform of the liquid crystal display device of this embodiment. In this embodiment, P-type TFTs and n-type TFTs are alternately formed in each row. Therefore, a TFT whose threshold value voltage VTH is a negative voltage can be used. In order to make the threshold voltage VTH a negative voltage, the center value V c-P of the non-selection voltage of the scan electrode with p-type TFT must be higher than the center value VCL-N of the non-selection voltage of the scan electrode with n-type TFT, And the potential difference must exceed V〇n + AVs. Here, AVs is the maximum value of the field crossing voltage. Therefore, the maximum amplitude VDP-P of the image signal voltage can be reduced to Vn + Z ^ Vs + AV. In this embodiment, as compared with Embodiment 4, a TFT with a negative voltage threshold voltage VTH can be used, and the The video signal voltage becomes lower. [Example 8]
本實施例之像素結搆及驅動方法與寅施例1不相同。 本實施例中構成如第2 1圖之像素。第2 2圖爲像素 之等效電路。第2 3圖爲第2 1圖中沿E — E /線之斷面 圖。第2 4圖爲沿F — F >線之斷面圖。第2 5圖爲沿G 木紙張·尺度適用中國國豕標牟(CNS ) A4規格(2〖〇 X 297公爱)_ 39 _ , 裝 i 線 (請先閱讀背面之注意事項再填寫本頁) A7 __________B7_五、發明説明(3〇 ) —G >線之斷面圖。如第2 1圖所示,像素係形成薄膜電 晶體元件1 5 a ,1 5 b。如第2 1圖所示,將配合畫像 之信號電壓施加於薄膜電晶體元件1 5 a之吸極2 5 a, 經由其源極2 6 a,穿孔3 1連接於像素電極3。將供給 與像素電極成爲電位差之基準電極4之電壓從次行之掃描 電極1 3 a經由穿孔3 2 ,薄膜電晶體元件1 5 b之吸極 2 5 b ,源極2 6 b供給。如第2 5圖所示,以像素電極 3 ,基準電極4 ,閘極絕緣膜9形成補助電容量元件 1 6 a。補助電容量元件1 6 a係鵪了藉著吸收信號之雜 訊而將像素電極之電位保持於定電位而設置。如此,於一 個像素內設置2個薄膜電晶體元件,而如第2 4圖所示, 使像素電極3與基準電極4間之電場方向E主要與基板面 成爲平行或具有水平方向成分。在此係使用2個薄膜電晶 體元件,但亦可使用3個以上之薄膜電晶體原件而形成冗 長結構。同樣的,補助電容量元件1 6 a亦可使用2個以 上。在此,因爲像素電極3與基準電極4間之調整只使用 光罩,故可抑制施加於液晶層之電場e之不均匀。又因以 同一層形成兩個源極,故可將像素電極3與基準電極4間 之距離d之不均勻壓制於5 %以下。 以下說明驅動方式。第2 7圖表示施加於各電極之電 壓之波形。進行每一行寫人信號之線順序驅動。掃描電壓 波形4 0 : V c (〉係由選擇一個行之T F T而使其成爲接 通狀態之選擇脈波4 1 : V η 〇 n (,與將電位V c供給於 1行以前之基準電極之基準電壓脈波5 1 : V C 所構成 ( CNS } ( 210X297^* )~- 33 - -------^ 裝------IT------.^ (t先閱讀背面之注意事項再填寫本頁) Β7 五、發明説明(31) 。第i + 1行之基準電壓脈波5 2 : V。c 〇 - 1 )係與第i (請先閲It背面之注意事項再填寫本頁) 行之掃描線之選擇脈波4 1 : V 〇 〇 n t 〇同步的施加。因此 ,當選擇脈波41施加於第i行之掃描線之掃描電壓波形 4 0時,薄膜電晶體元件1 5 a,1 5 b接通,信號電壓 波形6 1 : Vdo)與第i +1行之基準電壓脈波5 2 : V 〇cc( m分別被寫入經由薄膜電晶體元件1 5 a, 1 5 b連接於信號電極2及掃描電極1 3 a之補助電容量 元件1 6 a ,及液晶5 a。當該行之寫入期間(1 Η )終 了後,掃描電壓波形4 0 : V c 下降至斷路位準(非選 擇電壓),薄膜電晶體元件1 5 a,1 5 b成爲斷路狀態 ,保持寫入之電壓。但實際上,當掃描電壓波形4 0下降 至斷路位準時,產生因薄膜電晶體元件5 a ,5 b之寄生 電容量所產生之耦合雜訊所造成之電壓移位7 6 ,7 7 , 而被保持於該電壓。施加於液晶之電壓上施加薄膜電晶體 元件1 5 a,1 5 b之各源極電壓7 1 ,7 2間之電壓 7 8 ,而由該電壓決定該像素之亮度(透過率)。 本實施例中,從次行之掃描電極供給電位於基準電極 ,因此不需要施加電壓於基準電極之特別共同電極,故可 減少形成共同電極之過程。此外,與實施例4 ,5 ,6不 相同,不必使T F T之臨限値成爲高電壓,即使使用臨限 値爲0附近或0以下之T F T,仍能以交流驅動液晶。在 習用之驅動方法中,於將薄膜電晶體元件從導通狀態轉換 成斷路狀態時,經由薄膜電晶體元ί牛之寄生電容量接受之 電壓移位7 6 ,7 7而產生之 夜晶施加電壓之直流成分, 本紙浪尺度適用中國國家標隼(CNS >八4洗格(210X 297公釐)-34 A7 A7 經濟部中央橾準扃5¾工消費合作社印製 __B7 五、發明説明(32) 在本實施例中由2個薄膜電晶體元件互相抵消,故不會發 生。因此,不必進行過去以共同電極修正之直流成分之修 正,可用交流驅動液晶,因此不會發生閃爍。同樣的,亦 未確認到因直流成分所造成之殘像,亮度傾斜度亦不明顯 。若使用Μ I Μ二極體等之2端子元件時,因元件臨限値 之不均匀而產生之亮度不均匀等畫質不良亦同樣的由2個 元件抵消,故可消除亮度不均勻。 〔實施例9〕 本實施例之結構除了以下要之外,其他皆與實施例8 相同。 第2 8圖表示本實施例之像素平面圖。第2 9圖爲其 等效電路圖。將供給電位於基準電極4之薄膜電晶體元件 1 5之吸極與次行之掃描配線4以電容量元件1 0 1連接 。爲了消除因信號而產生之雜訊,將連接於像素電極3與 基準電極4間之電容量元件6以2個電容量元件6 a,6 b之串聯電路形成,藉此,可取消第8實施例中所必須之 全部穿孔。因此,在需要細微加工之像素內,不需要進行 層間絕緣膜之圖型化及開孔等加工處理,不會發生因絕緣 膜加工不良而產生之異層間之短路及接觸不良,而且可減 小與顯示無關之穿孔領域,藉此可提高開口率,提供高品 質液晶顯示裝置。 利用電容量結合供給電位於基準電極4時,如第2 9 圖所示,可由電容量元伴1 〇 1與補助電容量元件1 6 b 氏張尺度適用中國國家標準(CNS ) A4規格(210X297公釐_)~- 35 - " ' -------——-d------訂------線 (請先Μ讀背面之注意事領再填寫本頁) A7 2^6448 五、發明説明(33 ) ,1 6 c之合成電容量之比決定基準電極4之電位。假設 像素電極3之電壓爲VdS,次行之掃描電極之電壓爲 Vcc(1),基準電極4之電壓爲Vc( i ),補助電容量元 件1 6 b,1 6 c之電容量値分別爲Cl 7 ,C6 a, C 6 b,其合成電容量値爲C 1 0 2 ,電容量元件1 〇 1 之電容量値爲C 1 0 1時,因爲像素電極3與基準電極4 間之液晶電容量非常小,故 C 6 a X C 6 b C 6 a X C 6 b C 1 0 2 = C 1 7 +—-- ^ c 6 a + c 6 b C 6 a + C 6 b 施加於液晶之電壓爲 C 1 Ο 2 VD(j) - VC(i) = VD(j)-丨(VD(j) — VGC(1)) . c 1 0 1 + C 1 〇 2 + VGC(i)) C 1 0 .1 =(VD(j) - VGC(丨))~ - c 1 〇 1 + C 1 〇 2 因此,若電容量元(牛1 〇 1之電容量値c 1 〇 1冗 '力 大於合成電容量C 1 〇 2時,可施加充分電壓驅動液晶, 本紙張尺度通用中國國家樣準(CNS ) Α4况格(210x297公董)'36 ---------、裝------訂------線 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局負工消费合作社印¾ 經濟部中央標準局員工消費合作社印裝 ______ B7 五、發明説明(34 ) 即使爲2〜3倍,只有次行之掃描電極之電壓振幅增大 2 5〜3 3%,對顯示特性不發生任何影響。 依照本實施例,利用電容量結合供給對向電極之電歷 ,故不需要層間絕緣膜之圖型化及開孔等加工處理,可滅 小與顯示無關之領域,藉此可提高開口率,可提供因絕緣 膜加工之不良所造成之缺陷減少’高品質之液晶顯7K裝置The pixel structure and driving method of this embodiment are different from those of Embodiment 1. In this embodiment, the pixels shown in Fig. 21 are formed. Figure 22 shows the equivalent circuit of the pixel. Figure 23 is a cross-sectional view along line E-E / in Figure 21. Figure 24 is a cross-sectional view along the line F-F >. The second picture is the A4 specification of China National Standards (CNS) A4 (2 〖〇X 297 public love) _ 39 _, along the G wood paper and scale. (Please read the precautions on the back before filling this page ) A7 __________B7_ V. Description of the invention (3〇) —G > line cross-sectional view. As shown in FIG. 21, the pixel system is formed with thin film transistor elements 15a and 15b. As shown in FIG. 21, the signal voltage corresponding to the portrait is applied to the sink electrode 25 a of the thin film transistor element 15 a, and through the source electrode 26 a, the through hole 31 is connected to the pixel electrode 3. The voltage supplied to the reference electrode 4 having a potential difference from the pixel electrode is supplied from the scan electrode 1 3 a of the next row through the perforation 3 2, the sink electrode 2 5 b of the thin film transistor element 15 b, and the source electrode 2 6 b. As shown in FIG. 25, the auxiliary capacitance element 16a is formed by the pixel electrode 3, the reference electrode 4, and the gate insulating film 9. The auxiliary capacitance element 16a is provided by absorbing the noise of the signal to maintain the potential of the pixel electrode at a constant potential. In this way, two thin film transistor elements are provided in one pixel, and as shown in FIG. 24, the electric field direction E between the pixel electrode 3 and the reference electrode 4 is mainly parallel to the substrate surface or has a horizontal component. Two thin film transistors are used here, but more than three original thin film transistors can also be used to form a redundant structure. In the same way, more than two supplementary capacitance components 16a can be used. Here, since only the photomask is used for adjustment between the pixel electrode 3 and the reference electrode 4, unevenness of the electric field e applied to the liquid crystal layer can be suppressed. Since the two sources are formed in the same layer, the unevenness of the distance d between the pixel electrode 3 and the reference electrode 4 can be suppressed to less than 5%. The driving method will be described below. Figure 27 shows the waveform of the voltage applied to each electrode. Carry out the sequential drive of the writing signal line of each line. Scanning voltage waveform 4 0: V c (> is the selection pulse 4 1: V η 〇n by selecting the TFT of one row and turning it on (and the reference electrode before the potential V c is supplied to one row The reference voltage pulse 5 1: VC (CNS) (210X297 ^ *) ~-33-------- ^ Install ------ IT ------. ^ (T first Read the precautions on the back and then fill out this page) Β7 5. Description of invention (31). The reference voltage pulse wave 5 2 in line i + 1 5 2: V. c 〇- 1) and i (please read the back of It first (Notes need to fill in this page again) The selection of the scanning pulse of the scanning line 4 1: V 〇〇nt synchronous application. Therefore, when the selection pulse 41 is applied to the scanning voltage waveform of the scanning line of the i-th row 40, The thin film transistor element 1 5 a, 1 5 b is turned on, and the signal voltage waveform 6 1: Vdo) and the reference voltage pulse wave of the i + 1th line 5 2: V 〇cc (m are written via the thin film transistor element 1 5 a, 1 5 b is connected to the auxiliary capacitance element 16 a of the signal electrode 2 and the scan electrode 1 3 a, and the liquid crystal 5 a. When the writing period (1 Η) of the row ends, the scan voltage waveform 4 0: V c drops to the cut-off level (not selected Select voltage), the thin film transistors 1 5 a, 1 5 b become open, and maintain the written voltage. But in fact, when the scanning voltage waveform 40 drops to the open level, the thin film transistor 5 a, The voltage shift caused by the coupling noise caused by the parasitic capacitance of 5 b is shifted by 7 6, 7 7, and is maintained at this voltage. The voltage applied to the liquid crystal is applied with thin film transistor elements 1 5 a, 1 5 b The voltage 7 8 between each source voltage 7 1 and 7 2 determines the brightness (transmittance) of the pixel by this voltage. In this embodiment, the power supplied from the scan electrode of the next row is located at the reference electrode, so there is no need to apply The voltage is at the special common electrode of the reference electrode, so the process of forming the common electrode can be reduced. In addition, unlike Embodiments 4, 5, and 6, it is not necessary to make the threshold value of the TFT high, even if the threshold value is used near 0 Or the TFT below 0 can still drive the liquid crystal with AC. In the conventional driving method, when the thin film transistor element is switched from the on state to the off state, the parasitic capacitance of the thin film transistor element is accepted The DC component of the night crystal applied voltage generated by the pressure shift 7 6, 7 7, this paper wave scale is applicable to the Chinese national standard falcon (CNS > eight 4 wash grid (210X 297 mm) -34 A7 A7 Central Ministry of Economic Affairs Printed by the Industrial and Consumer Cooperatives __B7 5. Description of the invention (32) In this embodiment, the two thin film transistor elements cancel each other, so it does not happen. Therefore, it is not necessary to correct the DC component corrected in the past with the common electrode, and the liquid crystal can be driven by AC, so flicker does not occur. Similarly, the afterimage caused by the DC component has not been confirmed, and the brightness gradient is not obvious. When using a 2-terminal device such as a MOSFET, unevenness in brightness due to unevenness in the threshold value of the device is also offset by the two devices, so uneven brightness can be eliminated. [Embodiment 9] The structure of this embodiment is the same as Embodiment 8 except for the following points. Figure 28 shows a pixel plan view of this embodiment. Figure 29 is its equivalent circuit diagram. The sink electrode of the thin film transistor element 15 which supplies electricity to the reference electrode 4 and the scan line 4 of the next row are connected with the capacitance element 10 1. In order to eliminate the noise generated by the signal, the capacitance element 6 connected between the pixel electrode 3 and the reference electrode 4 is formed as a series circuit of two capacitance elements 6 a, 6 b, whereby the eighth implementation can be eliminated All the necessary holes in the example. Therefore, in pixels that require fine processing, there is no need for processing such as patterning and opening of the interlayer insulating film, short circuit and contact failure between different layers due to poor processing of the insulating film will not occur, and it can be reduced The perforation field, which is not related to display, can improve the aperture ratio and provide a high-quality liquid crystal display device. When the combined power supply is located at the reference electrode 4, as shown in Figure 2 9, the Chinese National Standard (CNS) A4 specification (210X297 Mm_) ~-35-" '------------ d ------ order ------ line (please read the notice on the back before filling this page ) A7 2 ^ 6448 V. Description of the invention (33) The ratio of the combined capacitance of 16 c determines the potential of the reference electrode 4. Assuming that the voltage of the pixel electrode 3 is VdS, the voltage of the scan electrode of the next row is Vcc (1), the voltage of the reference electrode 4 is Vc (i), and the capacitance values of the auxiliary capacitance elements 16b and 16c are respectively Cl 7, C6 a, C 6 b, the combined capacitance value is C 1 0 2, and the capacitance value of the capacitance element 1 〇1 is C 1 0 1, because the liquid crystal electricity between the pixel electrode 3 and the reference electrode 4 The capacity is very small, so C 6 a XC 6 b C 6 a XC 6 b C 1 0 2 = C 1 7 + —-- ^ c 6 a + c 6 b C 6 a + C 6 b The voltage applied to the liquid crystal is C 1 Ο 2 VD (j)-VC (i) = VD (j)-丨 (VD (j) — VGC (1)). C 1 0 1 + C 1 〇2 + VGC (i)) C 1 0 .1 = (VD (j)-VGC (丨)) ~-c 1 〇1 + C 1 〇2 Therefore, if the capacitance (the electric capacity of cattle 1 〇1 value c 1 〇1 redundant 'power is greater than the combined power When the capacity is C 1 〇2, a sufficient voltage can be applied to drive the liquid crystal. The standard of this paper is China National Standard (CNS) Α4 condition grid (210x297 public director) '36 ---------, installed ---- --Subscribe ------ Line (please read the notes on the back before filling out this page) Printed by the Ministry of Economic Affairs Central Bureau of Standards Consumer Cooperatives ¾ Central Bureau of Standards Printed by the industrial and consumer cooperative ______ B7 V. Description of the invention (34) Even if it is 2 to 3 times, only the voltage amplitude of the scan electrode in the second row increases by 2 5 to 3 3%, which does not have any effect on the display characteristics. According to this The embodiment uses the capacitance combined with the supply of the counter electrode's electrical history, so there is no need for processing such as patterning and opening of the interlayer insulating film, which can eliminate small areas not related to display, thereby improving the aperture ratio and providing Reduced defects due to poor processing of insulating film 'High-quality LCD 7K device
I 0 〔實施例1 0〕 本實施例之結構除了以下要件以外,其他與實施例8 相同。 第3 0圖爲驅動波形圖。像素結構及等效電路與第 2 1 ,2 2圖相同。本實施例之特徵爲:掃描電壓波形 4 0 : V c ( , — α )中,將基準電壓脈波5 ·· V G c C , - i )於每 1行以V cc爲中心進行極性反轉。因爲液晶電壓爲信號電 壓6 1與基準電壓脈波5 2之差電壓,故將選擇行之次行 之掃描電壓波形之基準電壓脈波5 2於每一行予以極性反 轉,藉此可實現液晶之每一行反轉驅動所造成之低電壓驅 動。適當的選擇基準電壓5 1 ,5 2之電壓振幅,以及使 信號電極與對向電壓之中心値相等,即可使信號電壓之振 幅成爲最小。 本實施例中,如此的選擇驅動條件’故可將信號側驅 動電路低電壓化,並且可減小因每一行之極性反轉所造成 之閃爍。 本紙浪尺度適用中國國家標準(CNS ) A4此格(210X297公釐)-37 (請先閱讀背面之注意事項再填寫本頁) 裝 --° .¾濟部中央標準局員工消費合作杜印製 A7 _ B7 五、發明説明(35) 〔實施例1 1〕 本實施例除了以下要件以外,其他與實施例1 0相同 〇 第31圖表示本實施例之2行2列之像素平面圖。第 3 2圖爲等級電路圖。第3 3圖表示其驅動波形。整個顯 示裝置藉著反復實施該像素配置而構成。像素之基本結構 與第2 1圖之第1實施例相同。本實施例之特徵爲:基準 電極4與供給電位之掃描電-極間之連接,係於每一列連接 於上下之掃描電極1及1 3 a,而其驅動方式係以實施例 1 0之低電壓驅動爲基礎,於選擇掃描電極時,在上下掃 描電極上,於每一例施加在實施例1 Q中,於每一行進行 極性反轉而施加之2種基準電壓。 依照本實施例,可將寫入液晶之極性於每一列反轉, 藉著在閘極配線上將串音電流以相反極之信號電壓寫入而 消除橫污點,如此可防止橫污點之產生,同時,又可將信 號電壓予以低電壓化。又於每一行進行極性反轉,藉此可 同時防止縱方向污點之發生,可提供高畫質低電®驅動。 以上利用實施例說明本發明之透過型液晶顯示裝置, 本發明亦可應用於反射型液晶顯示裝置。薄膜電晶體之構 造(正交叉構造,反交叉構造,共面構造等),及其材質 不受實施例之限制。 亦可將周邊電路(信號電極驅動電路’掃描電極驅動 電路,共同電極驅動電路之一部分或全部以1 c晶粒之狀 本紙張尺度適用中國國家標準(CNS ) A4洗格(210X297公釐)-此. --------卜裝------訂------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標率局員工消资合作社印裝 Α7 Β7 五、發明説明(36) 態直接黏接於構成顯示面板之基板7表面。亦可將周邊電 路之一部分或全部以聚矽T F T等一體的形成於基板7表 面。如此,與將周邊電設置於顯示面板外部時比較,可將 整個顯示裝置小型化。 將本發明之液晶顯示裝置與資訊處理裝置,記憶裝置 ,輸入裝置,輸出裝置,通信裝置等組合而可構成各種 〇A用機器,攜帶用機器。 依照本發明,將利用基板界面方向之電場轉換液晶之 方式,以調變掃描電極之電壓而予以低電壓化,可同時實 現低驅動電壓化,及高像素開口率化。如此,可提供消耗 電力低,明亮,視認性佳之薄膜電晶體型液晶顯示裝置。 同時又可抑制調變掃描電極之電壓而低電壓化之驅動方式 中成爲問題之串音(橫污點)之發生,可提供高畫質之薄 膜電晶體型液晶顯示裝置。此外,又可藉著薄膜電晶體元 件之臨限値電壓之控制,或形成η型薄膜電晶體元件與P 型薄膜電晶體元件,將掃描電極作爲基準電極,而且可實 現低驅動電壓化。此外,將2個薄膜電晶體元件作爲1個 像素使用,即可從掃描電極供給基準電位,而且可實現低 驅動電壓化及高畫質化。 圖式: 第1圖爲本發明實施例1之液晶顯示裝置之斷面圖( 第3圚中沿Α — Α線); 第2圖爲包含鄰接像素之實施例1之像素構造之正面 本紙張尺度適用中國國家揉準(CNS ) A4洗格(210X297公釐) 39 ----------裝d-----訂------線 (請先閲讀背面之注意事項再填寫本頁) Μ濟部中央標準局I工消費合作社印製 A7 B7 五、發明説明(37 ) ΓΒΠ · 圖, 第3圖爲實施例1之像素之構造之正面圖; 第4圖爲第3圖中沿B _ B >線之側斷面圖: 第5圖爲第3圖爲圖中沿C — C >線之側斷面圖; 第6圖爲實施例1之顯示裝罝之電路圖: 第7圖爲實施例1之驅動波形之圖: 第8圖爲實施例2之驅動波形之圖: 第9圖爲包含鄰接像素之實施例3之像素構造之正面 圖, 第10圖爲實施例3之像素之構造之正面圖; 第1 1圖爲第1 0圖中沿D — D /線之側斷面圖; 第1 2圖爲實施例3之顯示裝置之電路結構之圖; 第1 3圖爲實施例3之驅動波形之圖; 第14圖爲包含鄰接像素之實施例4之像素構造之正 面圖; 第1 5圖爲實施例4之像素構造之正面圖: 第16圖爲實施例4之顯示裝置之電路圖; 第1 7圖爲實施例4之驅動波形之圖; 第18圖爲實施例5之驅動波形之圖; 第1 9圖爲實施例6之驅動波形之圖: 第2 0圖爲實施例7之驅動波形之圖: 第2 1圖爲實施例8之像素構造之正面圖; 第2 2圖爲實施例8之像素之透過電路圖: 第2 3圖爲第2 1圖中沿E — E /線之側斷面圖; (請先閱讀背面之注意事項再填寫本頁) 裝. 訂 本紙張尺度適用中國國家榡丰(CNS ) Α4規格(210Χ 297公釐) 40 M濟部中央樣準局貞工消f合作杜印策 A7 __ϋ— 五、發明説明(38 ) 第2 4圖爲第2 1圖中沿F - F -線之側斷面圖: 第2 5圖爲第2 1圖中沿G — G >線之側斷面圖: 第2 6圖爲實施例8之顯示裝置之電路圖; 第2 7圖爲本發明實施例8之驅動波形之圖: 第2 8圖爲實施例9之像素構造之正面圖: 第2 9圖爲實施例9之像素透過電路圖; 第3 〇圖爲實施例1 〇之驅動波形之圖: 第3 1圖爲本發明液晶顯示裝置之液晶之動作之圖’ 第3 2圖爲電場方向與蝎面上之分子長軸定向方向( 摩擦方向)0 LC’偏光板偏光軸方向0 P所形成之角度之· 圖; 第3 3圖爲本發明實施例1之光電特性之圖,爲正常 關閉型之例。 第3 4圖爲爲表示光電特性之場面上之分子長軸定向 方向(摩擦方向0 lc依存性之圖,爲正常關閉型之例。 〔記號說明〕 1 :掃描電極(閘極)。 2 :信號電極(吸極)。 3 :像素電極(源極)。 4 :共同電極(基準電壓)° 5 :液晶組成物層中之液晶分子。 6 :定向控制膜。 7 :基板。 本紙浪尺度適用中國國家橾牟(CNS > A4洗格(210X297公釐〉-41 - (請先閱讀背面之注意事項再填寫本頁) 装 Μ 經濟部中央標準局員工消f合作社印袈 A7 B7 五、發明説明(39 ) 8 :偏光板。 9 :閘極絕綠膜。 1 0 :保護膜。 1 1 :彩色濾波器。 1 2 :平坦化膜。 1 3 :前行之掃描電極。 1 3 a :後行之掃描電極。 15、15a' 15b:TFT (薄膜電晶體)。 1 6 、1 6a、1 6b、1 6c :補助電容量元件。 1 7 :控制電路。 1 8 :掃描電極驅動電路。 1 9 :信號電極驅動電路。 2 0 :共同電極驅動電路。 2 1 :顯示領域。 2 2 :無定形矽層。 2 3:遮光膜(黑矩陣)。 2 4 :遮光膜之分界線。 1 0 1 :電場方向。 1 0 2 :界面上之分子長軸定向方向(摩擦方向)° 1 0 3 :偏光板偏光透過軸方向。 本紙張尺度適用中國國家標準(CNS ) A4洗格(210X297公釐)-42 - (請先K讀背面之注意事項再填寫本頁) -裝. 訂I 0 [Embodiment 1 0] The structure of this embodiment is the same as Embodiment 8 except for the following requirements. Figure 30 is the driving waveform. The pixel structure and equivalent circuit are the same as in Figs. 2 1 and 2 2. The characteristic of this embodiment is that: in the scanning voltage waveform 40: V c (, — α), the reference voltage pulse wave 5 ·· VG c C,-i) is reversed in polarity with V cc as the center in each line . Since the liquid crystal voltage is the difference voltage between the signal voltage 61 and the reference voltage pulse 52, the reference voltage pulse 52 of the scan voltage waveform of the next row of the selected row is reversed in polarity in each row, whereby the liquid crystal can be realized Low voltage drive caused by inversion driving of each row. The amplitude of the signal voltage can be minimized by appropriately selecting the voltage amplitudes of the reference voltages 5 1 and 5 2 and equalizing the center values of the signal electrode and the opposing voltage. In this embodiment, such a selected driving condition can reduce the voltage of the signal-side driving circuit, and can reduce the flicker caused by the polarity reversal of each row. This paper wave scale is applicable to the Chinese National Standard (CNS) A4 (210X297mm) -37 (please read the precautions on the back and then fill out this page).-° A7 _ B7 V. Description of the invention (35) [Embodiment 1 1] This embodiment is the same as Embodiment 10 except for the following requirements. FIG. 31 shows a pixel plan view of 2 rows and 2 columns of this embodiment. Figure 3 2 is a hierarchical circuit diagram. Figure 33 shows the driving waveform. The entire display device is constructed by repeatedly implementing this pixel arrangement. The basic structure of the pixel is the same as the first embodiment shown in FIG. 21. The characteristic of this embodiment is: the connection between the reference electrode 4 and the scanning electrode-supply electrode of the supply potential is connected to the upper and lower scanning electrodes 1 and 1 3 a in each column, and the driving method is as low as that of embodiment 10 Based on the voltage driving, when the scan electrodes are selected, two types of reference voltages are applied to the upper and lower scan electrodes in Example 1 Q in Example 1 and the polarity inversion is applied in each row. According to this embodiment, the polarity of the written liquid crystal can be reversed for each column, and the horizontal stain can be eliminated by writing the crosstalk current on the gate wiring with the signal voltage of the opposite pole, thus preventing the generation of horizontal stains, At the same time, the signal voltage can be reduced. It also reverses the polarity of each line, thereby preventing the occurrence of vertical stains at the same time, and providing high image quality and low power® driving. The above uses embodiments to describe the transmissive liquid crystal display device of the present invention, and the present invention can also be applied to a reflective liquid crystal display device. The structure of the thin film transistor (forward cross structure, reverse cross structure, coplanar structure, etc.) and its material are not limited by the examples. The peripheral circuit (signal electrode drive circuit 'scan electrode drive circuit, part or all of the common electrode drive circuit can be in the shape of 1 c grain. This paper size is applicable to the Chinese National Standard (CNS) A4 wash (210X297 mm)- This. -------- Bu Zhuang ------ Subscribe ------ Line (please read the precautions on the back and then fill out this page). Printed by the Employee Consumer Cooperative of the Central Standard Rate Bureau of the Ministry of Economic Affairs. Install Α7 Β7 5. Description of the invention (36) State directly adhered to the surface of the substrate 7 constituting the display panel. Part or all of the peripheral circuits can also be integrally formed on the surface of the substrate 7 with polysilicon TFTs. In this way, the peripheral When the electricity is installed outside the display panel, the entire display device can be miniaturized. The liquid crystal display device of the present invention can be combined with an information processing device, a memory device, an input device, an output device, a communication device, etc. to form various OA devices , Portable device. According to the present invention, the method of using the electric field in the direction of the substrate interface to convert the liquid crystal to modulate the voltage of the scanning electrode to lower the voltage, which can simultaneously achieve a lower driving voltage and a higher voltage. The aperture ratio is improved. In this way, it can provide a thin-film transistor-type liquid crystal display device with low power consumption, bright, and good visibility. At the same time, it can suppress the crosstalk that is a problem in the low-voltage driving method by modulating the voltage of the scanning electrode The occurrence of horizontal stains) can provide high-quality thin-film transistor-type liquid crystal display devices. In addition, it can also control the threshold voltage of the thin-film transistor element, or form an n-type thin-film transistor element and a P-type thin film In the transistor element, the scan electrode is used as the reference electrode, and the driving voltage can be reduced. In addition, when two thin film transistor elements are used as one pixel, the reference potential can be supplied from the scan electrode, and the driving voltage can be reduced. And high image quality. Drawings: Figure 1 is a cross-sectional view of the liquid crystal display device according to Embodiment 1 of the present invention (along the line A-A in the third frame); Figure 2 is the embodiment 1 including adjacent pixels The front side of the pixel structure of this paper is suitable for the Chinese national standard (CNS) A4 wash grid (210X297mm) 39 ---------- installed d ----- set ----- line ( Please read the notes on the back first (Fill in this page) A7 B7 printed by the I-Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (37) ΓΒΠ · Figure 3 is a front view of the pixel structure of Example 1; Figure 4 is the third The side cross-sectional view along the B _ B > line in the figure: Figure 5 is the third cross-sectional view along the C-C > line in the figure; Figure 6 is the display decoration of Example 1 Circuit diagram: Figure 7 is a diagram of the driving waveform of Example 1: Figure 8 is a diagram of the driving waveform of Example 2: Figure 9 is a front view of the pixel structure of Example 3 including adjacent pixels, Figure 10 is Front view of the pixel structure of Embodiment 3; FIG. 11 is a side cross-sectional view along line D-D / in FIG. 10; FIG. 12 is a diagram of the circuit structure of the display device of Embodiment 3; Figure 13 is a diagram of the driving waveform of Example 3; Figure 14 is a front view of the pixel structure of Example 4 including adjacent pixels; Figure 15 is a front view of the pixel structure of Example 4: Figure 16 FIG. 17 is a circuit diagram of the display device of Embodiment 4; FIG. 17 is a diagram of the driving waveform of Embodiment 4; FIG. 18 is a diagram of the driving waveform of Embodiment 5; Fig. 20 is the driving waveform of the embodiment 6: Fig. 20 is the driving waveform of the embodiment 7: Fig. 21 is the front view of the pixel structure of the embodiment 8; Fig. 22 is the pixel of the embodiment 8 Through the circuit diagram: Figure 2 3 is the side cross-sectional view along line E-E / line in Figure 21; (please read the precautions on the back and then fill out this page) to install. The size of this paper is applicable to the Chinese national fengfeng ( CNS) Α4 specification (210Χ 297 mm) 40 M Ministry of Economic Affairs Central Prototype Bureau Zhen Gongxiao f cooperation Du Yince A7 __ϋ— V. Description of the invention (38) Figure 2 4 is the picture 2 1 along F-F -Side cross-sectional view of the line: Figure 2 5 is a cross-sectional view of the side along the G-G > line in Figure 21: Figure 2 6 is a circuit diagram of the display device of Example 8; Figure 2 7 is The driving waveforms of Embodiment 8 of the present invention: FIG. 28 is a front view of the pixel structure of Embodiment 9: FIG. 29 is the pixel transmission circuit diagram of Embodiment 9; FIG. 30 is the driving of Embodiment 1 Waveform diagram: Fig. 31 is a diagram of the operation of the liquid crystal of the liquid crystal display device of the present invention 'Fig. 3 2 is the direction of the electric field and the orientation direction of the molecular long axis on the scorpion surface (friction Direction) 0 LC 'polarizer polarizing axis direction 0 P formed angle; Figure; Figure 3 3 is a diagram of the photoelectric characteristics of Example 1 of the present invention, which is an example of a normally closed type. Figure 34 is a diagram showing the orientation of the long axis of the molecule on the scene of the photoelectric characteristics (the rubbing direction is 0 lc dependent), which is an example of a normally closed type. [Description of Symbols] 1: Scanning electrode (gate). 2: Signal electrode (sink). 3: Pixel electrode (source). 4: Common electrode (reference voltage) ° 5: Liquid crystal molecules in the liquid crystal composition layer. 6: Orientation control film. 7: Substrate. This paper wave scale is applicable. China National Mou Mouth (CNS > A4 wash grid (210X297mm> -41-(please read the precautions on the back before filling in this page) Installed by the Ministry of Economic Affairs, Central Bureau of Standards, Employee Consumer Cooperatives Cooperative A7 B7 V. Description (39) 8: Polarizing plate. 9: Gate green film. 1 0: Protective film. 1 1: Color filter. 1 2: Flattening film. 1 3: Scanning electrode on the front. 1 3 a: Scan electrode after the line. 15, 15a '15b: TFT (Thin Film Transistor). 16, 16a, 16b, 16c: auxiliary capacitance element. 1 7: control circuit. 1 8: scan electrode drive circuit. 1 9: Signal electrode drive circuit. 2 0: Common electrode drive circuit. 2 1: Display area. 2 2: Amorphous Layer 2: 3: Light-shielding film (black matrix). 2 4: Demarcation line of the light-shielding film. 1 0 1: Electric field direction. 1 0 2: Direction of molecular long axis orientation on the interface (friction direction) ° 1 0 3: Polarized light The polarized light of the board passes through the axis. This paper scale is applicable to the Chinese National Standard (CNS) A4 wash grid (210X297mm) -42-(please read the precautions on the back side before filling in this page)-install.
Claims (1)
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| TW83105754A TW296448B (en) | 1994-06-24 | 1994-06-24 | Active matrix liquid display device and driving method thereof |
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| TW83105754A TW296448B (en) | 1994-06-24 | 1994-06-24 | Active matrix liquid display device and driving method thereof |
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