TW309657B - - Google Patents

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Info

Publication number: TW309657B
Authority: TW; Taiwan
Prior art keywords: data; aforementioned; plural; complex; semiconductor memory
Prior art date: 1995-10-04

Application number

TW085112087A

Other languages

English (en)

Chinese (zh)

Original Assignee

Toshiba Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-10-04

Filing date

1996-10-03

Publication date

1997-07-01

1996-10-03 Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd

1997-07-01 Application granted granted Critical

1997-07-01 Publication of TW309657B publication Critical patent/TW309657B/zh

Links

239000004065 semiconductor Substances 0.000 claims description 200
230000015654 memory Effects 0.000 claims description 118
238000012360 testing method Methods 0.000 claims description 90
239000000872 buffer Substances 0.000 claims description 69
230000001360 synchronised effect Effects 0.000 claims description 30
238000003491 array Methods 0.000 claims description 18
230000005540 biological transmission Effects 0.000 claims description 14
239000000463 material Substances 0.000 claims description 8
230000009471 action Effects 0.000 claims description 6
230000002079 cooperative effect Effects 0.000 claims description 6
208000003580 polydactyly Diseases 0.000 claims description 5
238000000034 method Methods 0.000 claims description 3
239000011159 matrix material Substances 0.000 claims description 2
PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 5
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239000012190 activator Substances 0.000 claims 1
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BWSIKGOGLDNQBZ-LURJTMIESA-N (2s)-2-(methoxymethyl)pyrrolidin-1-amine Chemical compound COC[C@@H]1CCCN1N BWSIKGOGLDNQBZ-LURJTMIESA-N 0.000 description 1
YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
101710179738 6,7-dimethyl-8-ribityllumazine synthase 1 Proteins 0.000 description 1
235000009328 Amaranthus caudatus Nutrition 0.000 description 1
240000001592 Amaranthus caudatus Species 0.000 description 1
101100426900 Caenorhabditis elegans trd-1 gene Proteins 0.000 description 1
101710186608 Lipoyl synthase 1 Proteins 0.000 description 1
101710137584 Lipoyl synthase 1, chloroplastic Proteins 0.000 description 1
101710090391 Lipoyl synthase 1, mitochondrial Proteins 0.000 description 1
101000905241 Mus musculus Heart- and neural crest derivatives-expressed protein 1 Proteins 0.000 description 1
241001183271 Verrucomicrobiaceae Species 0.000 description 1
SAZUGELZHZOXHB-UHFFFAOYSA-N acecarbromal Chemical compound CCC(Br)(CC)C(=O)NC(=O)NC(C)=O SAZUGELZHZOXHB-UHFFFAOYSA-N 0.000 description 1
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239000002994 raw material Substances 0.000 description 1
238000011084 recovery Methods 0.000 description 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Dram (AREA)
Semiconductor Memories (AREA)

TW085112087A 1995-10-04 1996-10-03 TW309657B (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP25773595		1995-10-04

Publications (1)

Publication Number	Publication Date
TW309657B true TW309657B (de)	1997-07-01

Family

ID=17310377

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW085112087A TW309657B (de)	1995-10-04	1996-10-03

Country Status (3)

Country	Link
KR (1)	KR100261641B1 (de)
CN (1)	CN1099118C (de)
TW (1)	TW309657B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR100363079B1 (ko) *	1999-02-01	2002-11-30	삼성전자 주식회사	이웃한 메모리 뱅크들에 의해 입출력 센스앰프가 공유된 멀티 뱅크 메모리장치
DE19960557B4 (de) *	1999-12-15	2006-09-07	Infineon Technologies Ag	Integrierter dynamischer Halbleiterspeicher mit zeitlich gesteuertem Lesezugriff
DE19960558B4 (de) *	1999-12-15	2008-07-24	Qimonda Ag	Halbleiterspeicher vom wahlfreien Zugriffstyp (DRAM)
JP4540889B2 (ja) *	2001-07-09	2010-09-08	富士通セミコンダクター株式会社	半導体メモリ
KR100451466B1 (ko) *	2002-10-31	2004-10-08	주식회사 하이닉스반도체	테스트 성능이 개선된 반도체 메모리 장치
CN102522116B (zh) *	2003-03-18	2014-07-09	株式会社东芝	可编程阻抗存储器器件
KR100929826B1 (ko) *	2008-06-04	2009-12-07	주식회사 하이닉스반도체	반도체 메모리 소자
KR101060899B1 (ko) *	2009-12-23	2011-08-30	주식회사 하이닉스반도체	반도체 메모리 장치 및 이의 동작 방법
KR20140008766A (ko) *	2012-07-11	2014-01-22	에스케이하이닉스 주식회사	반도체메모리장치
KR102076196B1 (ko) *	2015-04-14	2020-02-12	에스케이하이닉스 주식회사	메모리 시스템, 메모리 모듈 및 메모리 모듈의 동작 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2519593B2 (ja) *	1990-10-24	1996-07-31	三菱電機株式会社	半導体記憶装置

1996
- 1996-10-03 TW TW085112087A patent/TW309657B/zh not_active IP Right Cessation
- 1996-10-04 KR KR1019960044672A patent/KR100261641B1/ko not_active Expired - Fee Related
- 1996-10-04 CN CN96121178A patent/CN1099118C/zh not_active Expired - Lifetime

Also Published As

Publication number	Publication date
KR970023369A (ko)	1997-05-30
KR100261641B1 (ko)	2000-07-15
CN1099118C (zh)	2003-01-15
CN1154559A (zh)	1997-07-16

Legal Events

Date	Code	Title	Description
2014-04-01	MM4A	Annulment or lapse of patent due to non-payment of fees

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US6215720B1 (en)	2001-04-10	High speed operable semiconductor memory device with memory blocks arranged about the center
TW309657B (de)	1997-07-01
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JPH0587917B2 (de)	1993-12-20
KR20010002766A (ko)	2001-01-15	리프레시 주기 선택 회로 및 입/출력 비트 폭 선택 회로를 구비한 다이내믹 랜덤 액세스 메모리 장치
CN111613261A (zh)	2020-09-01	用于交叉点型存储器单元的双极解码器
US6789137B2 (en)	2004-09-07	Semiconductor memory device allowing reduction of I/O terminals
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KR100881133B1 (ko)	2009-02-02	컬럼 어드레스 제어 회로
KR100471740B1 (ko)	2005-07-18	반도체메모리용메인앰프회로,반도체메모리및반도체메모리의제조방법
TW388119B (en)	2000-04-21	Decode signal comparator
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US6452861B1 (en)	2002-09-17	Semiconductor memory device allowing simultaneous inputting of N data signals
KR101907072B1 (ko)	2018-10-12	반도체 메모리 장치 및 그 동작 방법
TW200407911A (en)	2004-05-16	Integrated memory using prefetch architecture and method for operating an integrated memory