TW311274B - - Google Patents

Download PDF

Info

Publication number
TW311274B
TW311274B TW085108263A TW85108263A TW311274B TW 311274 B TW311274 B TW 311274B TW 085108263 A TW085108263 A TW 085108263A TW 85108263 A TW85108263 A TW 85108263A TW 311274 B TW311274 B TW 311274B
Authority
TW
Taiwan
Prior art keywords
terminal
resistive
patent application
item
terminals
Prior art date
Application number
TW085108263A
Other languages
Chinese (zh)
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Application granted granted Critical
Publication of TW311274B publication Critical patent/TW311274B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Protection Of Static Devices (AREA)

Description

五、 發明説明(1 經濟部中央標準局員工消費合作社印製 ΐ· 1關申請案對照 本案與另一美國專利申請案第08/53〇97〇號,題目爲「 採用不同長度之端子元件作靜電放電防護」有關,該案申 請Θ爲1995年9月20曰,其發明人與受讓人與本案相同, 本文納入作爲參考。 2 ·曼明領域 本發明與電子電路之靜電放電防護有關,尤其是指在半 導體晶片上形成的電路,具有絕緣體與細直線導體容易因 所存能量之快速放電而受損者。 3. Μ關技術説明 積體電路技術中速度與功能之增加是以更爲密集組裝的 電路與更細的導體線寬達成的。一積體電路特徵之側向尺 度也需要更薄的絕緣層,通常是在矽基材上以加熱成長的 二氧化矽。有用的電路是以75埃(人)厚的閘極氧化層製成 。雖然這些氧化物較薄時具有較低的缺陷密度,因此在崩 潰之則可承受較高的電場,但薄氧化膜更容易因偶發的靜 電放電(ESD)而崩潰。儲存技術之更進一步的進展將產生— 種在約1英吋見方的晶片上具有2〇 Mb容量之半導體唯讀記 憶體(ROM)。此種記憶體加上介面電路將含在一低成本而 精實的封裝中,約2.5 X 1.125 X 0.25英吋。此技術若繁衍進 入量產 < 消費市場時,將使保護敏感電路免於ESD之需求 增加。 將兀件中(如記憶體)細直線導體或薄閘極氧化物毀損的 4 本紙張尺度適财國_標準( ----------袭-----;—、玎------t (請先閱讀背面之注意事項再填寫本頁) Μ 311274 五、發明説明(2 ) 一種能量來源爲爲儲存於絕緣人體内的靜電能量。眾所週 知人體可充電至2000伏的電位(相對於地電位),而人體的 電容範圍從10 pf至100 pf。若人體内所存電荷加到一接地 之任何半導體晶片的間極輸入端,則所加電壓足以使薄絕 緣層開始崩潰’且此種快速的放電能量通常足以永久破壞 絕緣體或將晶片上的細直線導體蒸發。 許多金氧矽(MOS)元件裝有輸入保護電路,以一分路二 極體與-精實電阻器組成。此在比方説計算機的防護環境 下工作良好,但在量產市場中要將音樂存在—記憶晶片上 ,且該晶片經常反覆插入一可攜式放音機時就不太可靠。 而且此種保護電路在晶片上需要空間,且可能降低高速性 能。 當一記憶晶片插入主機裝備時,有好幾個ESD情況。第 一,主機裝備可能接到地電位,而處理晶片的工作者帶電 。第二,裝備與地隔離而帶電,插記憶體的工作者也需電 。第三,裝備帶電,但人不帶電。 因此有必要在所有這些情況下作靜電防護以確保記憶晶 片以及主機裝備的可靠作業。其目的在達成插入物與主機 裝備間的電位平衡,但不破壞可能窄至〇 5 "m的薄絕緣體 或導體路徑。 發明總述 本發明有關於保護積體電路以免靜電放電造成損壞之裝 置與方法,其中連接積體電路與其他裝置的插頭或插座具 有不同電阻與長度的端子,而以其承受靜電能量放電能力 -5- 本紙張尺度適用中國國家標準(CNS ) Λ4規格(210X297公釐) ---------批衣-----玎-------泳 (請先閲讀背面之.注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製V. Description of invention (1 Printed by the Ministry of Economic Affairs, Central Bureau of Standards, Employee Consumer Cooperative of 1 · 1 customs application case. This case is compared with another US Patent Application No. 08 / 53〇97〇. "Electrostatic discharge protection", the application Θ in this case is September 20, 1995, and its inventor and assignee are the same as this case, and this article is incorporated by reference. 2 · Manmin Field This invention relates to the protection of electrostatic discharge of electronic circuits. Especially refers to the circuits formed on semiconductor wafers, which have insulators and thin linear conductors that are easily damaged due to the rapid discharge of stored energy. 3. M Guan Technology Description The increase in speed and function of integrated circuit technology is more dense The assembled circuit is achieved with thinner conductor widths. The lateral dimensions of an integrated circuit feature also require a thinner insulating layer, usually silicon dioxide heated on silicon substrate. The useful circuit is The gate oxide layer is 75 angstroms thick. Although these oxides have a lower defect density when they are thinner, they can withstand higher electric fields when they break down, but the thin oxygen The chemical film is more likely to collapse due to accidental electrostatic discharge (ESD). Further advances in storage technology will result in a semiconductor read-only memory (ROM) with a capacity of 20 Mb on a wafer about 1 inch square. This kind of memory plus interface circuit will be contained in a low-cost and compact package, about 2.5 X 1.125 X 0.25 inches. If this technology multiplies into mass production < consumer market, it will protect sensitive circuits from The demand for ESD has increased. The 4 papers damaged by thin straight conductors or thin gate oxides in the elements (such as memory) are suitable for the country_standard (---------- 攻 ---- -; —, 玎 ------ t (please read the precautions on the back before filling in this page) Μ 311274 V. Description of the invention (2) An energy source is the static energy stored in the insulating human body. It is well known to the human body It can be charged to a potential of 2000 volts (relative to ground potential), and the capacitance of the human body ranges from 10 pf to 100 pf. If the charge stored in the human body is applied to the interpolar input terminal of any semiconductor chip connected to ground, the applied voltage is sufficient The thin insulating layer begins to collapse 'and this rapid discharge The amount is usually sufficient to permanently destroy the insulator or evaporate the thin linear conductors on the wafer. Many metal oxide silicon (MOS) devices are equipped with input protection circuits, consisting of a shunt diode and a precision resistor. For example, a computer It works well in the protective environment, but in the mass production market, it is necessary to store music on the memory chip, and the chip is often not reliable when it is repeatedly inserted into a portable player. And this protection circuit needs on the chip Space, and may reduce high-speed performance. When a memory chip is inserted into the host equipment, there are several ESD conditions. First, the host equipment may be connected to ground potential, and the workers handling the wafer are charged. Second, the equipment is isolated from ground Workers plugged into memory also need electricity. Third, equipment is charged, but people are not charged. Therefore, it is necessary to protect against static electricity under all these conditions to ensure the reliable operation of memory wafers and host equipment. The purpose is to achieve a potential balance between the insert and the host equipment, but without destroying a thin insulator or conductor path that may be as narrow as 5 m. SUMMARY OF THE INVENTION The present invention relates to a device and method for protecting integrated circuits from damage caused by electrostatic discharge, in which plugs or sockets connecting integrated circuits and other devices have terminals with different resistances and lengths, and with their ability to withstand electrostatic energy discharge- 5- This paper scale is applicable to China National Standard (CNS) Λ4 specification (210X297mm) --------- approved clothing ----- 玎 ------- swimming (please read the back page first .Notes to fill out this page) Printed by the Employees Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs

五、發明説明( 經濟部中央標準局員工消費合作社印裝 8U274 疋順序連接積體電路各個端子以限制起始放電電流。 本實例中’含電子電路之外殼上之端子有兩種長 中較長的端子電阻較高,並引至電子電路中較能承 =電能量放電的區域,此電路區域爲地路徑。其他的端 又車id肖電源’輸出信號路徑及輸人信號路徑連接 端:最先完成與插座上對應的地端子之接地連接 選擇較長端子之電阻使其能限制待連接裝置之插頭與 電位不平衡所造成的起始放電電流。積體電路 一,最厚的絕緣體與最大的線寬。電源 爲、亩I'長的⑻子長度,信號端子則最短,因此地路徑 ?:散靜電能量之最佳路徑,電源路徑爲次佳路徑,或者 路徑與接地路徑在插頭或插座構造上均可具有3 二明另一實例中,較長的電阻性端子是在插座上,插 子η含:待保護之電路以免靜電放電之外殼上的端 子配對此較長的電阻性端子爲供地連接之用。 m—實例中,較長的地端子在含有電路的外殼上 太恭配對端子其電阻高於所有其他端子。 =明再-實例中’含有電阻性端子的外殼對電路提供 連接最先完成。 彳有其他端子長’於是地 在所有的實例中,電阻性端 合金形成;或爲達成更高的=1一合金如錄鉻 性節段組成,以„合全材料*電/且性端子可由一電阻 材枓與—或多個導電柄段製成。 -6 - 本纸張尺度適财S B家標:規格(210x^i~ 裝 -訂 ^---- (請先閱讀背面之注意事項再填寫本頁) ^11274 A7 B7 4 五、發明説明( 實行本發明之方法則需要設置一插頭或插座,具有不同 長度之端子,安排成使引至電路最強健區域(一般爲地電路 或電源電路)之端子在配成一連接器對的程序中較早連接。 此方法可採用兩種,三種或四種不同的長度,其中地端子 最長,輸入信號端子最短。最先連接的端子其電阻比其他 端子高。地端子,電源端子或此兩種端子含有一電阻性元 件’當靜電能量消散時用以限制峰値電流。 本發明的優點爲,當積體電路随組裝密度與速度之增加 而對ESD日益敏感時,在晶片上無需額外的區域以對積體 電路提供另一種層次之防護。 本發明這些與其他的特色與優點在考量下面優選實例之 詳細説明並結合附圖後將更爲瞭解。 圖式簡述 圖1 A與1 B示出本發明一實例之俯視圖與側視圖; 圖1 C示出本發明另一實例之俯視圖; 圖2示出本發明又一實例之俯視圖;以及 圖3示出本發明再一實例之俯視圖;以及 圖4示出本發明進一步之實例之俯視圖。 這些圖均未按比例續'示。 優選實例詳沭 現在參考圖1,*出裝置100,其爲一插入式模組,包封 一電子電路,比方説可能是一處理器、放大器、開關、 憶電路或光電元件等積體電路。外殼11〇形成—空腔112 其中裝著電子電路114,這些電路是以習知的擴離子植 本紙張尺度適用中國國家標準(CNS ) Λ4規格(21 〇 X 297公楚 n. i - n^i ϋκ I m n —^n ^^^1 ^^^1-*.J 、-0 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印裝 3也74 Α7 Β7 經濟部中央標準局員工消費合作杜印製 五、發明説明(5 入、乳化、遮罩及蚀刻等程序形成的。這些電路各有一地 焊勢120、一電源焊替122、一或多個信號輸入焊塾丨24、及 —或多個輸出信號焊墊120。通常這些烊墊爲鋁,其上分別 以熱壓黏合法作出一系列金線連接13〇至136。連線13〇至 136的另一端則作成一系列端子14〇至146,連接裝置1〇〇與 —外部插座。還有一些其他的方法將晶片連至端子,如使 用撞壓技術’其中晶片的有效侧加以反轉,使撞壓處上的 焊錫重新流動而完成連接,最後引至同一外部端子。 電阻性端子140比其他端子長,於是最先與插座中其對應 的端子完成接觸,插座中的端子則終止於一平面(未示出) 。電阻性端子140並具—高於任一其他端子142至146之電阻 。地電位指定予端子140 ,晶片電源由端子142提供,晶片 ,入信號由一或多個端子144提供,晶片之輸出則連至—或 多個端子146。電阻性端子140的較高電阻不但由於其較大 長度造成,而且更重要的是由所選的製成材料造成。端子 可由一電阻合金如鎳鉻合金(65份Ni、12份心、23份以)製 成,其電阻率爲110 或以鎳鉻鐵耐埶人金 (T〇phet)A(80份Nl,20份Cr)製成,其電阻率爲1〇6口_ -cm ;其他端子則以銅合金製成,其電阻率僅爲! 7 cm 。電阻性端子mo連至電子電路114的地電路,地T 路比起其他電路—般具有較厚的絕緣體與較寬的導體路Ζ ,所以地電路最能消散電路上可能已累聚的靜 其將插入之插座上所累聚的靜電電荷。 ° ,5 靜電電荷的一種來源爲人體,在乾燥曰子時人體電荷可 8- 衣紙張尺度適财國國家標準(CNS )八4規格(21〇Χ297公楚— ---------*批衣------訂------球 (請先閱讀背面之注意事項再填寫本頁)V. Description of the invention (printed 8U274 printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. Connect the terminals of the integrated circuit in order to limit the initial discharge current. In this example, the terminals on the housing containing the electronic circuit have two long and medium long ones. The terminal resistance is higher, and leads to an area in the electronic circuit that is more able to withstand = electrical energy discharge. This circuit area is the ground path. The other ends are connected to the output signal path and input signal path of the power supply: the most First complete the ground connection with the corresponding ground terminal on the socket. Select the resistance of the longer terminal to limit the initial discharge current caused by the imbalance of the plug and potential of the device to be connected. Integrated circuit 1, the thickest insulator and the largest The line width of the power supply is ⑻ sub-length of mu, and the signal terminal is the shortest, so the ground path ?: the best path to dissipate static energy, the power path is the second best path, or the path and the ground path are in the plug or socket The structure can all have 3 Er Ming. In another example, the longer resistive terminal is on the socket, and the plug η contains: the circuit to be protected from electrostatic discharge on the housing The terminal is matched with this longer resistive terminal for ground connection. M—In the example, the longer ground terminal is too paired with the terminal on the housing containing the circuit, and its resistance is higher than all other terminals. = 明 再-例The 'case with resistive terminals is the first to provide connection to the circuit. There are other terminal lengths'. So in all cases, the resistive end alloy is formed; or to achieve a higher = 1 alloy, such as chromium The segment is composed of „composite material * electrical and flexible terminals can be made of a resistive material bar and — or more conductive handle segments. -6-This paper size is suitable for SB family standard: specifications (210x ^ i ~ Binding-binding ^ ---- (please read the precautions on the back before filling in this page) ^ 11274 A7 B7 4 5. Description of the invention (Practice of the method of the present invention requires the setting of a plug or socket with terminals of different lengths, Arranged so that the terminal leading to the most robust area of the circuit (generally a ground circuit or power circuit) is connected earlier in the procedure of configuring a connector pair. This method can use two, three or four different lengths, of which The ground terminal is the longest, the input signal terminal The shortest. The resistance of the first connected terminal is higher than that of the other terminals. The ground terminal, the power terminal or both terminals contain a resistive element to limit the peak current when the electrostatic energy dissipates. The advantage of the present invention is that when the As integrated circuits become more sensitive to ESD with increasing packing density and speed, there is no need for additional areas on the chip to provide another level of protection for integrated circuits. These and other features and advantages of the present invention are considered below for preferred examples The detailed description will be better understood in conjunction with the drawings. BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1 A and 1 B show a top view and a side view of an example of the present invention; FIG. 1 C shows a top view of another example of the present invention; FIG. 2 FIG. 3 shows a top view of yet another example of the present invention; and FIG. 3 shows a top view of yet another example of the present invention; and FIG. 4 shows a top view of a further example of the present invention. These figures are not continued to scale. The preferred example is detailed. Referring now to FIG. 1, the device 100 is a plug-in module that encapsulates an electronic circuit. For example, it may be an integrated circuit such as a processor, amplifier, switch, memory circuit, or optoelectronic component. The housing 11〇 is formed-a cavity 112 in which is mounted an electronic circuit 114, these circuits are based on the conventional ion-implanted paper standard of the Chinese National Standard (CNS) Λ4 specification (21 〇X 297 Gongchu n. I-n ^ i ϋκ I mn — ^ n ^^^ 1 ^^^ 1-*. J, -0 (please read the precautions on the back before filling out this page) Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 3 also 74 Α7 Β7 Du printed by the Ministry of Economic Affairs, Central Bureau of Standards and Staff's consumer cooperation V. Invention description (5 steps, emulsification, masking and etching etc. formed by these procedures. Each of these circuits has a ground potential 120, a power source replacement 122, and one or more signals Input pads 24, and-or a plurality of output signal pads 120. Usually these pads are aluminum, on which a series of gold wire connections 13〇 to 136 are made by thermocompression bonding respectively. Connections 13〇 to 136 At the other end, a series of terminals 140 to 146 are formed, connecting the device 100 to an external socket. There are other ways to connect the chip to the terminal, such as the use of impact technology where the effective side of the chip is reversed so that The solder on the impact point reflows to complete the connection, and finally leads to the same External terminals. The resistive terminal 140 is longer than other terminals, so it first completes contact with its corresponding terminal in the socket, and the terminal in the socket terminates in a plane (not shown). The resistive terminal 140 does not The resistance of one of the other terminals 142 to 146. The ground potential is assigned to terminal 140, the chip power is provided by terminal 142, the chip input signal is provided by one or more terminals 144, and the output of the chip is connected to one or more terminals 146. Resistance The higher resistance of the sexual terminal 140 is not only due to its larger length, but more importantly, it is caused by the selected manufacturing material. The terminal can be made of a resistance alloy such as nickel-chromium alloy (65 parts Ni, 12 parts core, 23 parts ) Made with a resistivity of 110 or made with Tocophet A (80 parts Nl, 20 parts Cr), with a resistivity of 10 0 _ -cm; other terminals It is made of copper alloy and its resistivity is only 7 cm. The resistive terminal mo is connected to the ground circuit of the electronic circuit 114. The ground T circuit has a thicker insulator and a wider conductor circuit than other circuits. , So the ground circuit can best dissipate the static electricity that may have accumulated on the circuit The electrostatic charge accumulated on the socket to be plugged in. °, 5 One source of electrostatic charge is the human body. When the human body is dry, the human body charge can be 8-. The size of the paper is suitable for the national standard (CNS) 8.4 specifications (21〇 Χ297 公 楚 —— --------- * Clothing ----- order ----- ball (please read the precautions on the back before filling this page)

經濟部中央標準局—工消費合作社印製 達200伏之電位(V),最大電容C則爲10〇pf。 對應的電荷Q=CV可能不小心加到電路上或配對的插座上 。當插頭與插座接觸時唯—能限制起始電流的爲其路徑中 排放靜電能量”聯電阻。對於起始於端子⑷之輸入信號 路徑,故意保持低電阻,而且,記憶電路所用之輸入信號 路徑具有極細的導體(0.5,以下),Μ的絕緣體如閑極氧 化物,可能僅75A厚’這些電路極易因靜電放電而受损。 但起始於電阻性端子140的地電路具有在較厚絕緣體上形 成的較寬線寬,所以較能消散靜電電荷。電阻性端子 做得比其他端子長,所以是較佳的放電端子。由電阻合金 所製成的電阻性端子140使起始放電電流降至一可容忍的 位準。在串聯的電阻電容放電路徑中,消散所存電荷的時 間與時間常數T = RC有關。需要更大電阻之處可用一電阻 性合金提供,電阻性端子140可由一電阻性節段19〇串聯 一或多個導電性柄段191而组成,如圖1(:所示。電阻性節 段190可由一金屬氧化物或陶瓷合金材料形成,這些都是 電子元件技術中眾所週知的。 外殼110爲一絕緣材料,如一塑膠或陶瓷,其電阻大於 1〇9Ω,此電阻將任何潛在的放電電流局限於微安培。所示 外殼11〇爲當一保護蓋(未示出)置於空腔112以及接線13〇至 136上心最後組裝前之狀況。外殼11〇也可延伸而完全支撑 端子140至146,但並未偏離本發明之精神。 观在參考圖2,示出一插座200介於裝備29〇與外殼21〇之 間,外殼210所含之電路在一半導體晶片(未示出)上形成, -9· 本紙張尺度迺用r國國家標準(CNS ) Α4規格(21〇><297公餐) (請先閲讀背面之注意事項再填寫本頁) •装· 訂 線—---- A7 B7 五、發明説明(7 ) 其中端子240連至晶片上的地電路,端子242連至晶片上的 電源電路,一或多個端子244連至晶片上的輸入電路,一或 多個端子246連至晶片上的輸出電路。端子25〇至256由插座 支撑,並分別與外殼上對應的端子24〇至246配對。端子25〇 提供地電位至晶片,且比端子252至256長,因此,地電路 爲晶片上最先連接的電路。端子25〇之電阻遠大於端子252 至256,因其以一電阻性合金製成,或因其具有—電阻性節 段260與一導電性柄段261_連。於此重覆討論關於用以提 供裝置100之電阻的構造與材料以及靜電能量之放電。端子 2>50與256連至裝備290,裝備29〇提供地電位、電源及輸入 信號,並分別經由連線280至284接收輸出信號。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 現在參考圖3,示示一插座300介於裝備"ο與外殼31〇之 間,外殼310含有在一半導體晶片上形成的電路(未示出)。 其中端子340連至晶片上的地電路,端子342連至晶片上的 電源電路,一或多個端子344連至晶片上的輸入電路,以及 一或多個端子346連至晶片上的輸出電路。由插座支撑的端 子350至356則調配成分別與外殼上的對應端子34〇至346配 對。端子340提供地電位至晶片,且比端子342至346長,因 此地電路爲晶片上最先連接的電路。插座上之端子35〇其電 阻遠高於端子352至356之電阻,因爲其以一電阻性合金製 成,或因爲其具一電阻性節段與一導電性柄段_連。於此 重覆討論關於用以提供裝置1 〇〇之電阻的構造與材料以及靜 電此里之放電。端子380至386連至裝置390,裝置390提供 地電位、電源及輸入信號,並分別經由連線3至384接收 -10- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公着) ^11274 A7 B7 五、發明説明(8 ) 輸出信號。 現在參考圖4,示出一插座340介於裝備490與外殼410之 間,外殼410含有在一半導體晶片上形成的電路(未示出), 其中端子440連至晶片上的地電路,端子442連至晶片上的 電源電路,一或多個端子444連至晶片上的輸入電路,以及 一或多個端子446連至晶片上的輸出電路。由插座支撑的端 子450至456則調配成分別與外殼上的對應端子440至446配 對。端子440提供地電位至晶片,且其電阻遠高於端子442 至44 6之電阻。插座上的端子460比插座上所有其他端子長 ,所以地電路爲晶片上最先連接的電路。外殼上的端子440 其電阻遠高於端子442至446之電阻,因爲其以一電阻性合 金製成,或因爲其具有一電阻性節段與一導電性柄段串連 。於此重覆討論關於用以提供裝置100之電阻的構造與材料 以及靜電能量之放電。端子480至486連至裝備490,裝備 490提供地電位、電源與輸入信號,並分別經由連線480至 484接收輸出信號。 經濟部中央標準局員工消費合作社印裝 (請先閱讀背面之注意事項再填寫本頁) 在一優選實例中,圖1至圖4中端子140、260、350與440 之電阻値範圍分別在103Ω與106Ω之間。將外殼插入插座是 在0.3秒内完成的,使得大部分的能量在輸入端子完成接觸 前可經由地端子在10-3秒内消散。人體之最大電容爲100 pf ,電阻則在104至106Ω,於是與一電容器經一電阻放電相關 的習知電流與電壓之指數衰減的時間常數爲T=RC,其單位 爲秒,此例中爲10·4至10—秒,在其間63%(l-(l/e))的靜電電 荷均已消散。當時間等於三倍時間常數時,95%的電荷均 -11 - 本紙張尺度適用中國國家標準(CNS )八4規格(210 X 297公釐) 五、發明説明(9 已消教。 可在此特別説明的實例中進行變化 與修正,但並不低祐 本發明之範園。尤其是各端子互相的相對位置可以^離 比方説電源與地連線可以是外邊的端子,信號載運端子則 介於其間。各端子不必爲-平面陣列,而可安排成一圓形 或一立體陣列。各型端子的確切長度可以變化,重要的斜 ESD最不敏感的地端子最先連接,對esd損傷最敏感的端 子最後連接。尚有許多其他顯而易見的組合,其中電源端 子亦可爲不同長度的電阻性端子。額外的長度與電阻可置 於外殼端子上或插座端子上,或者是額外的長度與電阻可 置於外殼與插座之間。The Central Standards Bureau of the Ministry of Economic Affairs and Industry-Consumer Cooperatives printed a potential (V) of 200 volts, with a maximum capacitance C of 10〇pf. The corresponding charge Q = CV may be accidentally added to the circuit or the matching socket. When the plug is in contact with the socket, the only way to limit the initial current is to discharge static energy in its path. "Resistance. For the input signal path starting from terminal ⑷, intentionally keep the resistance low, and the input signal path used by the memory circuit. With extremely thin conductors (0.5, below), M insulators such as idle pole oxides may be only 75A thick. These circuits are easily damaged by electrostatic discharge. However, the ground circuit starting from the resistive terminal 140 has a relatively thick thickness. The wider line width formed on the insulator makes it easier to dissipate the electrostatic charge. The resistive terminal is made longer than the other terminals, so it is a better discharge terminal. The resistive terminal 140 made of a resistive alloy makes the initial discharge current Reduced to a tolerable level. In the series resistance discharge path, the time to dissipate the stored charge is related to the time constant T = RC. Where a larger resistance is required, a resistive alloy can be used, and the resistive terminal 140 can be provided by a The resistive segment 190 is composed of one or more conductive shank segments 191 connected in series, as shown in FIG. 1 (: shown. The resistive segment 190 may be composed of a metal oxide or ceramic The formation of gold materials is well known in the technology of electronic components. The housing 110 is an insulating material, such as a plastic or ceramic, and its resistance is greater than 10 9 Ω. This resistance limits any potential discharge current to microamperes. The housing 11 shown 〇When a protective cover (not shown) is placed in the cavity 112 and the wires 13〇 to 136 before the final assembly. The housing 11〇 can also be extended to fully support the terminals 140 to 146, but without departing from the invention With reference to FIG. 2, a socket 200 is interposed between the equipment 29〇 and the housing 21〇. The circuit contained in the housing 210 is formed on a semiconductor chip (not shown). I use the national standard (CNS) Α4 specifications (21〇 > < 297 public meals) (please read the precautions on the back and then fill out this page) • Packing and binding —---- A7 B7 V. Invention Description (7) where terminal 240 is connected to the ground circuit on the chip, terminal 242 is connected to the power circuit on the chip, one or more terminals 244 are connected to the input circuit on the chip, and one or more terminals 246 are connected to the chip Output circuit. Terminals 25〇 to 256 are supported by the socket And are paired with corresponding terminals 24〇 to 246 on the housing. Terminal 25〇 provides ground potential to the chip and is longer than terminals 252 to 256. Therefore, the ground circuit is the first circuit connected on the chip. The resistance of terminal 25〇 It is much larger than the terminals 252 to 256, because it is made of a resistive alloy, or because it has a resistive segment 260 and a conductive handle segment 261_. The discussion about the resistance used to provide the device 100 is repeated here The structure and materials and discharge of electrostatic energy. Terminals 2> 50 and 256 are connected to equipment 290, equipment 29 provides ground potential, power and input signals, and receive output signals via connections 280 to 284, respectively. Printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling in this page). Referring now to FIG. 3, it shows that a socket 300 is between the equipment " ο and the housing 31. The housing 310 contains a Circuits (not shown) formed on semiconductor wafers. Terminal 340 is connected to the ground circuit on the chip, terminal 342 is connected to the power circuit on the chip, one or more terminals 344 are connected to the input circuit on the chip, and one or more terminals 346 are connected to the output circuit on the chip. The terminals 350 to 356 supported by the socket are paired with corresponding terminals 34 to 346 on the housing, respectively. Terminal 340 provides ground potential to the chip and is longer than terminals 342 to 346, so the ground circuit is the first circuit connected on the chip. The resistance of the terminal 35 on the socket is much higher than the resistance of the terminals 352 to 356 because it is made of a resistive alloy or because it has a resistive segment connected to a conductive handle segment. Here we repeat the discussion about the structure and materials used to provide the resistance of the device 100 and the discharge of static electricity. The terminals 380 to 386 are connected to the device 390. The device 390 provides ground potential, power, and input signals, and receives them through the connection 3 to 384. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 public) ^ 11274 A7 B7 5. Description of the invention (8) Output signal. Referring now to FIG. 4, a socket 340 is shown between the equipment 490 and the housing 410. The housing 410 contains a circuit (not shown) formed on a semiconductor wafer, where terminal 440 is connected to the ground circuit on the wafer, terminal 442 One or more terminals 444 are connected to the input circuit on the chip, and one or more terminals 446 are connected to the output circuit on the chip. The terminals 450 to 456 supported by the socket are paired with corresponding terminals 440 to 446 on the housing, respectively. The terminal 440 provides ground potential to the chip, and its resistance is much higher than the resistance of the terminals 442 to 446. The terminal 460 on the socket is longer than all other terminals on the socket, so the ground circuit is the first circuit connected on the chip. The resistance of the terminal 440 on the housing is much higher than the resistance of the terminals 442 to 446 because it is made of a resistive alloy or because it has a resistive segment connected in series with a conductive handle segment. Here we repeat the discussion about the structure and materials used to provide the resistance of the device 100 and the discharge of electrostatic energy. Terminals 480 to 486 are connected to equipment 490, which provides ground potential, power, and input signals, and receives output signals via connections 480 to 484, respectively. Printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) In a preferred example, the resistance values of terminals 140, 260, 350 and 440 in Figures 1 to 4 are in the range of 103Ω Between 106Ω. Inserting the housing into the socket is completed in 0.3 seconds, so that most of the energy can be dissipated in 10-3 seconds via the ground terminal before the input terminal completes contact. The maximum capacitance of the human body is 100 pf, and the resistance is 104 to 106 Ω, so the time constant of the exponential decay of the conventional current and voltage associated with the discharge of a capacitor through a resistance is T = RC, and its unit is seconds, in this example From 10.4 to 10 seconds, 63% (l- (l / e)) of the electrostatic charge has been dissipated. When the time is equal to three times the time constant, 95% of the charge is -11-This paper scale is applicable to the Chinese National Standard (CNS) 84 specifications (210 X 297 mm) V. Invention description (9 has been eliminated. Can be here Changes and corrections are made in the specifically described examples, but this does not detract from the scope of the present invention. In particular, the relative positions of the terminals can be separated from each other. For example, the power and ground connections can be external terminals, and the signal carrying terminals are In the meantime, each terminal does not have to be a planar array, but can be arranged in a circular or a three-dimensional array. The exact length of each type of terminal can vary, the most oblique ESD least sensitive ground terminal is connected first, and the most sensitive to esd damage The terminal is connected last. There are many other obvious combinations, among which the power terminal can also be a resistive terminal of different length. The extra length and resistance can be placed on the shell terminal or the socket terminal, or the extra length and resistance can be Place between the shell and the socket.

In 1· nf* ! -I - n I m ml m In、一-eJ- I - - nn 1^1 I {請先聞讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作杜印製 本紙張尺度適用中國國家標準(CNS ) A4規格(2〗0X29?公釐)In 1 · nf *! -I-n I m ml m In 、 一 -eJ- I--nn 1 ^ 1 I (Please read the precautions on the back before filling this page) Employee consumption cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs The size of the paper printed by Du Duan is applicable to the Chinese National Standard (CNS) A4 specification (2〗 0X29? Mm)

Claims (1)

第85108263號專利申請案 3 212?^專利範圍修正本(8θ年3月) A8 B8 C8 D8 ή午h'i丨V 經濟部中央標準局員工消費合作社印褽 六、申請專利範圍 1. 一種保護電子電路的裝置,該電子電路具有對靜電放電 較爲敏感的元件以及對靜電放電較不敏感的元件,該裝 置包含: ’ 一電阻性端子,具一第一長度,連至較不敏感的元 件;以及 一第二端子,具一第二長度,連至較爲敏感的元件; 其中第一長度超過第二長度。 2 .根據申請專利範圍第1項之裝置,其中該電阻性端子以 一高電阻合金製成。 3.根據申請專利範圍第2項之裝置,其中該高電阻合金爲 鎳鉻合金。 4 .根據申請專利範圍第1項之裝置,其中該電阻性端子包 含: 一電阻性節段;及 一導電性柄段。 5. 根據申請專利範圍第4項之裝置,其中該電阻性節段爲 一陶瓷金屬材料。 6. —種保護半導體晶片上所形成電路之裝置,以免於靜電 放電,該電路具有地、電源、輸出與輸入等元件,該裝 置包含: 一電阻性地端子,具一第一長度,連至該等地元件; 一組端子,具一第二長度,分別連至該電源、輸出與 輸入等元件; 其中第一長度超過第二長度。 44330.DOC 本紙張尺度適用中國國家揉準(CNS ) A4規格(210X297公釐) :-I - ; - ----- I I—I I --1» - !-1.1 - ------ (請先閱讀背面之注意事項再填寫本頁) A8 BS C8 D8 ^11274 々、申請專利範圍 7 .根據申請專利範圍第6項之裝置,其中該電阻性地端子 以一高電阻合金製成。 8 .根據申請專利範圍第7項之裝置,其中該高電阻合金爲 鎳鉻合金。 9 .根據申請專’利範圍第6項之裝置,其中該電阻性端子包 含: . 一電阻性節段;及 一導電性柄段。 10. 根據中請專利範圍第9項之裝置,其中該電阻性節段爲 一陶資:金屬材料。 11. 一種對積體電路記憶體作靜電防護之裝置,該裝置適於 插入一插座内,該插座有許多終止於一平面之端子,該 裝置包含: 一外殼,形成一固定該積體電路記憶體之空腔; 至少一電阻性地端子,具一第一曝露長度,由該外殼 支撑,並連至該記憶體之地; 一组由外殼支撑的端子,該等端子連至積體電路記憶 體以提供電源、至少一輸入連線及至少一輸出連線,各 端子具一短於第一曝露長度之第二曝露長度。 12. 根據申請專利範圍第1 1項之裝置,其中該電阻性地端子 以一高電阻合金製成。 13. 根據申請專利範圍第12項之裝置,其中該高電阻合金爲 鎳路合金。 14. 根據申請專利範圍第1 1項之裝置,其中該電阻性地端子 44330.DOC - 2 - 本紙伕尺度適用中國國家揉準(CNS ) A4規格(210X 297公釐) I --- I I I In ml I- - 11-- I I I-- s -- - I -I I- - (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 Α8 Β8 C8 D8 ^11274 々、申請專利範圍 包含: 一電阻性節段;及 一導電性柄段。 15. 根據申請專利範圍第14項之裝置,其中該電阻性節段爲 一陶瓷金屬#料3 16. 根據申請專利範圍第11項之裝置,其中該外殼的電阻超 過109Ω。 17. —種對一半導體晶片上形成之電路作靜電防護之插座, 該插座適於接納來自晶片的許多端子,該等端子終止於 一平面,該插座包含: 一電阻性端子,具一第一曝露長度,與裝備相連而提 供地電位至該晶片; 一組端子,包括一第二端子與裝備相連而提供電源至 該晶片,及至少一端子適於接納來自該晶片之輸出信 號,及至少一端子適於提供一輸入至晶片,此組中各端 子具一短於第一曝露長度之第二曝露長度。 18. 根據申請專利範圍第1 7項之插座,其中該電阻性端子以 一高電阻合金製成3 19. 根據申請專利範圍第1 8項之插座,其中該高電阻合金爲 鎳絡合金。 20. 根據申請專利範圍第1 7項之插座,其中該電阻性端子包 含: 一電阻性節段;及 一導電性柄段。 44330.DOC · 3 - 本紙張尺度適用中國國家標準(CNS ) Α4洗格(210Χ297公釐) I - - - - m - ----- ^^1 - -Ml-· I 1— 1^1 - — I . ^i (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 21. 根據申請專利範圍第20項之插座,其中該電阻性節段爲 一陶瓷:金屬材料。 ‘ 22. —種保護半導體晶片上形成之電子電路之插座,其各端 子均非等長,其中最長的端子連到晶片上的各地電位電 路,包含: 一電阻性端子與裝備相連而提供地電位至該晶片; 一組端子,與該電阻性端子等長,包括一第二端子與 製備相連而提供電源至該晶片,及至少一端子適於接納 一來自該晶片之輸出信號,及至少一端子適於提供一輸 入至晶片。 23. 根據申請專利範圍第2 2項之插座,其中該電阻性端子以 一高電阻合金製成。 24_根據申請專利範圍第2 3項之插座,其中該高電阻合金爲 鎳鉻合金。 25. 根據申請專利範圍第22項之插座,其中該電阻性端子包 含: 一電阻性節段;及 一導電性柄段。 經濟部中央標準局員工消費合作社印製 I - - 1- -i - - -- ! - I I I. 11— _ - - I I (請先S讀背面之注意事項再填寫本頁) 26. 根據申請專利範圍第25項之插座,其中該電阻性節段爲 一陶資:金屬材料。 27. —種保護一半導體晶片上形成之電路之外殼,該外殼可 插入一插座内,該插座則有一連至地電位之電阻性端 子,該外殼包含: 一地端子,具一第一曝露長度,連至晶片上的地電 44330.DOC - 4 - 本紙張尺度逋用中國國家標準(CNS ) A4規格(210 X 297公釐) A8 B8 C8 D8 ^112 74 六、申請專利範圍 路; (請先閱讀背面之注意事項再填寫本頁) 一組與晶片連接的端子,以提供電源至少一輸入連線 及至少一輸出連線,各端子具一短於第一曝露長度之第 二曝露長度。 28. 根據申請專知範圍第2 7項之外殼,其中外殼的電阻超過 109Ω。 29. —種保護半導體晶片上形成之電子電路以免於電性放電 之方法,包含·· 使用一含端子之插頭,各端子連至晶片上的地、電源 與信號等電路,其中地端早"之長度與電阻超過其他端 子。 30. 根據申請專利範圍第29項之方法,其中地端子之電阻範 圍從103 Ω至106Ω。 31. —種保護半導體晶片上形成之電子電路以免於電性放電 之方法,包含: 佼^用一含端子之插座,各端子適於與晶片上引至地、 電源及信號電路之端子配對,其中插座上地端子之長度 與電阻超過插座上其他端子。 經濟部中央標準局員工消費合作社印策 32. 根據申請專利範圍第3 1項之方法,其中地端子之電阻範 圍從103Ω至106Ω。 33. —種保護半導體晶片上形成之電子電路以免於電性放電 之方法,包含: 使用一插頭,具一地端子,其電阻高於插頭上所有其 他端子;以及 5- 44330.DOC 本紙張尺度適用中國國家樣率(CNS ) Α4洗格(210Χ297公釐)Patent Application No. 85108263 3 212? ^ Amendment of the patent scope (March 8θ) A8 B8 C8 D8 ή 午 h'i 丨 V Printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy VI. Application for a patent scope 1. A protection An electronic circuit device having components sensitive to electrostatic discharge and components less sensitive to electrostatic discharge. The device includes: a resistive terminal with a first length connected to the less sensitive component And a second terminal with a second length connected to more sensitive components; wherein the first length exceeds the second length. 2. The device according to item 1 of the patent application scope, wherein the resistive terminal is made of a high resistance alloy. 3. The device according to item 2 of the patent application scope, wherein the high-resistance alloy is a nickel-chromium alloy. 4. The device according to item 1 of the patent application scope, wherein the resistive terminal includes: a resistive segment; and a conductive handle segment. 5. The device according to item 4 of the patent application scope, wherein the resistive segment is a ceramic metal material. 6. A device to protect the circuit formed on the semiconductor chip from electrostatic discharge. The circuit has components such as ground, power, output, and input. The device includes: a resistive ground terminal with a first length connected to Such ground components; a set of terminals with a second length, respectively connected to the power supply, output and input components; wherein the first length exceeds the second length. 44330.DOC This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm): -I-;------ II—II --1 »-! -1.1------- (Please read the precautions on the back before filling this page) A8 BS C8 D8 ^ 11274 々, patent application scope 7. The device according to item 6 of the patent application scope, in which the resistive ground terminal is made of a high resistance alloy. 8. The device according to item 7 of the patent application scope, wherein the high-resistance alloy is a nickel-chromium alloy. 9. The device according to item 6 of the patent application scope, wherein the resistive terminal comprises:. A resistive segment; and a conductive handle segment. 10. The device according to item 9 of the Chinese patent application, where the resistive segment is a ceramic: metal material. 11. A device for electrostatic protection of integrated circuit memory, the device is suitable for being inserted into a socket, the socket has a number of terminals that terminate in a plane, the device includes: a housing, forming a memory for fixing the integrated circuit The cavity of the body; at least one resistive ground terminal with a first exposed length supported by the housing and connected to the memory ground; a set of terminals supported by the housing connected to the integrated circuit memory The body provides power, at least one input connection and at least one output connection, and each terminal has a second exposure length shorter than the first exposure length. 12. The device according to item 11 of the patent application scope, wherein the resistive ground terminal is made of a high resistance alloy. 13. The device according to item 12 of the patent application scope, wherein the high-resistance alloy is a nickel circuit alloy. 14. The device according to item 11 of the scope of the patent application, in which the resistive ground terminal 44330.DOC-2-The paper size is applicable to China National Standard (CNS) A4 specification (210X 297 mm) I --- III In ml I--11-- II I-- s--I -I I--(Please read the precautions on the back before filling out this page) Printed by the Ministry of Economic Affairs Central Standards Bureau Employee Consumer Cooperative Α8 Β8 C8 D8 ^ 11274 々. The scope of patent application includes: a resistive segment; and a conductive handle segment. 15. The device according to item 14 of the patent application scope, wherein the resistive segment is a ceramic metal material 3. The device according to item 11 of the patent application scope, wherein the resistance of the housing exceeds 109Ω. 17. A socket for electrostatic protection of a circuit formed on a semiconductor chip. The socket is suitable for receiving many terminals from the chip. The terminals terminate in a plane. The socket includes: a resistive terminal with a first Exposure length, connected to the equipment to provide ground potential to the chip; a set of terminals, including a second terminal connected to the equipment to provide power to the chip, and at least one terminal adapted to receive the output signal from the chip, and at least one The terminals are suitable for providing an input to the chip, and each terminal in this group has a second exposure length shorter than the first exposure length. 18. The socket according to item 17 of the patent application scope, wherein the resistive terminal is made of a high-resistance alloy 3 19. The socket according to item 18 of the patent application scope, wherein the high-resistance alloy is a nickel complex alloy. 20. The socket according to item 17 of the patent application scope, wherein the resistive terminal includes: a resistive segment; and a conductive handle segment. 44330.DOC · 3-This paper scale is applicable to the Chinese National Standard (CNS) Α4 wash grid (210Χ297 mm) I-----m------ ^^ 1--Ml- · I 1— 1 ^ 1 -— I. ^ I (please read the precautions on the back before filling in this page) A8 B8 C8 D8 printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 6. Scope of patent application 21. The socket according to item 20 of the scope of patent application, The resistive segment is a ceramic: metal material. '22. A kind of socket for protecting the electronic circuit formed on the semiconductor chip, the terminals are not of equal length, and the longest terminal is connected to the potential circuit on the chip, including: a resistive terminal connected to the equipment to provide ground potential To the chip; a set of terminals equal in length to the resistive terminal, including a second terminal connected to the preparation to provide power to the chip, and at least one terminal adapted to receive an output signal from the chip, and at least one terminal It is suitable for providing an input to the chip. 23. The socket according to item 22 of the patent application scope, wherein the resistive terminal is made of a high resistance alloy. 24_ The socket according to item 23 of the patent application scope, wherein the high-resistance alloy is nickel-chromium alloy. 25. The socket according to item 22 of the patent application scope, wherein the resistive terminal includes: a resistive segment; and a conductive handle segment. I--1- -i---!-II I. 11— _--II printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page) 26. According to the application The socket of item 25 of the patent scope, wherein the resistive segment is a ceramic material: metal material. 27. A casing for protecting a circuit formed on a semiconductor chip, the casing can be inserted into a socket, the socket has a resistive terminal connected to ground potential, the casing includes: a ground terminal with a first exposure length , Connected to the ground on the chip 44330.DOC-4-This paper standard adopts the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A8 B8 C8 D8 ^ 112 74 VI. The scope of patent application; (please Read the precautions on the back before filling this page.) A set of terminals connected to the chip to provide power for at least one input connection and at least one output connection. Each terminal has a second exposure length shorter than the first exposure length. 28. According to the enclosure of item 27 of the scope of application know-how, the resistance of the enclosure exceeds 109Ω. 29. A method to protect the electronic circuit formed on the semiconductor chip from electrical discharge, including the use of a plug with terminals, and each terminal is connected to the ground, power supply and signal circuits on the chip. ; The length and resistance exceed other terminals. 30. According to the method of claim 29 of the patent application scope, the resistance of the ground terminal ranges from 103 Ω to 106 Ω. 31. A method to protect the electronic circuit formed on the semiconductor chip from electrical discharge, including: using a socket with terminals, each terminal is suitable for mating with the terminal on the chip to the ground, power supply and signal circuit, The length and resistance of the ground terminal on the socket exceed the other terminals on the socket. The policy of the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 32. According to the method of item 31 of the patent application scope, the resistance of the ground terminal ranges from 103Ω to 106Ω. 33. A method of protecting electronic circuits formed on semiconductor chips from electrical discharge, including: using a plug with a ground terminal whose resistance is higher than all other terminals on the plug; and 5- 44330.DOC Applicable to China National Sample Rate (CNS) Α4 wash grid (210Χ297mm)
TW085108263A 1995-09-20 1996-07-09 TW311274B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53096895A 1995-09-20 1995-09-20

Publications (1)

Publication Number Publication Date
TW311274B true TW311274B (en) 1997-07-21

Family

ID=24115727

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085108263A TW311274B (en) 1995-09-20 1996-07-09

Country Status (2)

Country Link
JP (1) JPH09121450A (en)
TW (1) TW311274B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI502721B (en) * 2013-02-05 2015-10-01 Himax Tech Ltd Esd protection device for chip and esd protection method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI502721B (en) * 2013-02-05 2015-10-01 Himax Tech Ltd Esd protection device for chip and esd protection method thereof

Also Published As

Publication number Publication date
JPH09121450A (en) 1997-05-06

Similar Documents

Publication Publication Date Title
TW471144B (en) Method to prevent intrusions into electronic circuitry
US9450428B2 (en) Package module of battery protection circuit
US7497737B2 (en) Subminiature electrical connector including over-voltage and over-current circuit protection
US7064423B2 (en) IC module and IC card
US20090190277A1 (en) ESD Protection For USB Memory Devices
US7061091B2 (en) Surface mount package with integral electro-static charge dissipating ring using lead frame as ESD device
WO2000047030A1 (en) Electrostatic discharge protection package and method
JP3953815B2 (en) Flat mount with at least one semiconductor chip
TW311274B (en)
TW383518B (en) Electrical apparatus for overcurrent protection of electrical circuits
TWI299516B (en) Semiconductor device
TW381348B (en) Method for preventing CMOS wells damaging gate oxide
TW304299B (en)
TW299496B (en) Electrostatic discharge protection utilizing varying length terminal elements
TW200522090A (en) Over-current protection apparatus
TWI537835B (en) Memory cards and electronic machines
TW488055B (en) Semiconductor device including an integrated circuit housed in an array package having signal terminals arranged about centrally located power supply terminals
CN101379452A (en) Data cartridge with electrostatic discharge protection
TW529215B (en) IC carrying substrate with an over voltage protection function
TWI495077B (en) Multi-channel over-voltage protection device
JPS6297896A (en) Integrated circuit card
TW441077B (en) Hybrid integrated circuit device
TWI273696B (en) Semiconductor device and voltage division circuit
JP2010272488A (en) Incorporation of electrostatic protection portion into small connector
JPH0135483Y2 (en)