TW322593B - - Google Patents
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- Publication number
- TW322593B TW322593B TW86106676A TW86106676A TW322593B TW 322593 B TW322593 B TW 322593B TW 86106676 A TW86106676 A TW 86106676A TW 86106676 A TW86106676 A TW 86106676A TW 322593 B TW322593 B TW 322593B
- Authority
- TW
- Taiwan
- Prior art keywords
- landmark
- corrosion
- surrounding
- magnet mechanism
- magnetic
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 69
- 238000004544 sputter deposition Methods 0.000 claims description 61
- 230000007797 corrosion Effects 0.000 claims description 57
- 238000005260 corrosion Methods 0.000 claims description 57
- 230000007246 mechanism Effects 0.000 claims description 53
- 239000010409 thin film Substances 0.000 claims description 17
- 230000000875 corresponding effect Effects 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 4
- 230000002079 cooperative effect Effects 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- 239000002245 particle Substances 0.000 description 32
- 239000010408 film Substances 0.000 description 27
- 238000000151 deposition Methods 0.000 description 18
- 230000008021 deposition Effects 0.000 description 18
- 239000000306 component Substances 0.000 description 17
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 13
- 238000000427 thin-film deposition Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 239000008358 core component Substances 0.000 description 9
- 238000000429 assembly Methods 0.000 description 8
- 230000000712 assembly Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000004907 flux Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 244000227633 Ocotea pretiosa Species 0.000 description 2
- 235000004263 Ocotea pretiosa Nutrition 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241000282326 Felis catus Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW86106676A TW322593B (fr) | 1997-05-19 | 1997-05-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW86106676A TW322593B (fr) | 1997-05-19 | 1997-05-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW322593B true TW322593B (fr) | 1997-12-11 |
Family
ID=51567156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW86106676A TW322593B (fr) | 1997-05-19 | 1997-05-19 |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW322593B (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI414618B (zh) * | 2005-08-26 | 2013-11-11 | 尼康股份有限公司 | A holding device, an assembling system, a sputtering device, and a processing method and a processing device |
-
1997
- 1997-05-19 TW TW86106676A patent/TW322593B/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI414618B (zh) * | 2005-08-26 | 2013-11-11 | 尼康股份有限公司 | A holding device, an assembling system, a sputtering device, and a processing method and a processing device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |