TW326547B - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method

Info

Publication number
TW326547B
TW326547B TW085116291A TW85116291A TW326547B TW 326547 B TW326547 B TW 326547B TW 085116291 A TW085116291 A TW 085116291A TW 85116291 A TW85116291 A TW 85116291A TW 326547 B TW326547 B TW 326547B
Authority
TW
Taiwan
Prior art keywords
desired orientation
semiconductor device
previous
thin film
film transistor
Prior art date
Application number
TW085116291A
Other languages
Chinese (zh)
Inventor
Shunpei Yamazaki
Satoshi Teramoto
Jun Oyama
Yasushi Ogata
Masahiko Hayakawa
Mitsuaki Osame
Hisashi Ohtani
Original Assignee
Handotai Enetgy Kenkyusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP32464596A external-priority patent/JP3645379B2/en
Application filed by Handotai Enetgy Kenkyusho Kk filed Critical Handotai Enetgy Kenkyusho Kk
Application granted granted Critical
Publication of TW326547B publication Critical patent/TW326547B/en

Links

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)

Abstract

A semiconductor device, which is fabricated to a thin film transistor on active polysilicon layer with insulation substrates, has the features as follows: 1) polysilicon containing continuous crystallization structure in desired orientation, and its crystallization grain boundary in previous desired orientation; 2) in thin film transistor, the connection direction of source and drain regions having the same direction as previous desired orientation; 3) impurity segregating along previous grain boundary.
TW085116291A 1996-02-20 1996-12-30 Semiconductor device and its manufacturing method TW326547B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5833496 1996-02-20
JP8875996 1996-03-17
JP32464596A JP3645379B2 (en) 1996-01-19 1996-11-19 Method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
TW326547B true TW326547B (en) 1998-02-11

Family

ID=58262279

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085116291A TW326547B (en) 1996-02-20 1996-12-30 Semiconductor device and its manufacturing method

Country Status (1)

Country Link
TW (1) TW326547B (en)

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees