TW329540B - The method for etching metal layer - Google Patents

The method for etching metal layer

Info

Publication number
TW329540B
TW329540B TW086102419A TW86102419A TW329540B TW 329540 B TW329540 B TW 329540B TW 086102419 A TW086102419 A TW 086102419A TW 86102419 A TW86102419 A TW 86102419A TW 329540 B TW329540 B TW 329540B
Authority
TW
Taiwan
Prior art keywords
metal layer
connection hole
etching metal
gas
etch
Prior art date
Application number
TW086102419A
Other languages
English (en)
Inventor
Kei Hattori
Akira Kobayashi
Mikio Nonaka
Shin Takefuji
Masaru Kasai
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW329540B publication Critical patent/TW329540B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW086102419A 1996-03-01 1997-02-27 The method for etching metal layer TW329540B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04496696A JP3897372B2 (ja) 1996-03-01 1996-03-01 金属膜のエッチング方法

Publications (1)

Publication Number Publication Date
TW329540B true TW329540B (en) 1998-04-11

Family

ID=12706230

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086102419A TW329540B (en) 1996-03-01 1997-02-27 The method for etching metal layer

Country Status (5)

Country Link
US (1) US5846886A (zh)
JP (1) JP3897372B2 (zh)
KR (1) KR100237942B1 (zh)
DE (1) DE19706763B4 (zh)
TW (1) TW329540B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6579806B2 (en) 2000-07-12 2003-06-17 Applied Materials Inc. Method of etching tungsten or tungsten nitride in semiconductor structures

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3003608B2 (ja) * 1997-01-23 2000-01-31 日本電気株式会社 半導体装置の製造方法
JP2000252259A (ja) * 1999-02-25 2000-09-14 Sony Corp ドライエッチング方法及び半導体装置の製造方法
KR100358640B1 (ko) * 1999-09-02 2002-10-30 삼성전자 주식회사 반도체장치 제조를 위한 텅스텐 플러그 형성방법
US6500356B2 (en) * 2000-03-27 2002-12-31 Applied Materials, Inc. Selectively etching silicon using fluorine without plasma
US20030010354A1 (en) * 2000-03-27 2003-01-16 Applied Materials, Inc. Fluorine process for cleaning semiconductor process chamber
JP2002025986A (ja) * 2000-07-06 2002-01-25 Matsushita Electric Ind Co Ltd ドライエッチング方法
US6843258B2 (en) * 2000-12-19 2005-01-18 Applied Materials, Inc. On-site cleaning gas generation for process chamber cleaning
JP2002343798A (ja) * 2001-05-18 2002-11-29 Mitsubishi Electric Corp 配線層のドライエッチング方法、半導体装置の製造方法および該方法によって得られた半導体装置
US20030121796A1 (en) * 2001-11-26 2003-07-03 Siegele Stephen H Generation and distribution of molecular fluorine within a fabrication facility
US20040151656A1 (en) * 2001-11-26 2004-08-05 Siegele Stephen H. Modular molecular halogen gas generation system
US20040037768A1 (en) * 2001-11-26 2004-02-26 Robert Jackson Method and system for on-site generation and distribution of a process gas
US6933243B2 (en) * 2002-02-06 2005-08-23 Applied Materials, Inc. High selectivity and residue free process for metal on thin dielectric gate etch application
JP2010199182A (ja) * 2009-02-24 2010-09-09 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
US9418869B2 (en) * 2014-07-29 2016-08-16 Lam Research Corporation Method to etch a tungsten containing layer
JP7496725B2 (ja) * 2020-07-20 2024-06-07 東京エレクトロン株式会社 エッチング方法およびエッチング装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4824802A (en) * 1986-02-28 1989-04-25 General Electric Company Method of filling interlevel dielectric via or contact holes in multilevel VLSI metallization structures
GB2228822A (en) * 1989-03-01 1990-09-05 Gen Electric Co Plc Electronic devices.
US4980018A (en) * 1989-11-14 1990-12-25 Intel Corporation Plasma etching process for refractory metal vias
DE69034137D1 (de) * 1990-10-01 2004-06-03 St Microelectronics Srl Herstellung von Kontaktanschlüssen bei der alles überdeckenden CVD-Abscheidung und Rückätzen
US5164330A (en) * 1991-04-17 1992-11-17 Intel Corporation Etchback process for tungsten utilizing a NF3/AR chemistry
JPH0645326A (ja) * 1992-04-08 1994-02-18 Nec Corp 半導体装置の製造方法
JPH0774243A (ja) * 1993-06-30 1995-03-17 Kawasaki Steel Corp 半導体装置の製造方法
US5514604A (en) * 1993-12-08 1996-05-07 General Electric Company Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6579806B2 (en) 2000-07-12 2003-06-17 Applied Materials Inc. Method of etching tungsten or tungsten nitride in semiconductor structures

Also Published As

Publication number Publication date
DE19706763A1 (de) 1997-11-06
JPH09246239A (ja) 1997-09-19
JP3897372B2 (ja) 2007-03-22
KR100237942B1 (ko) 2000-01-15
DE19706763B4 (de) 2004-02-12
US5846886A (en) 1998-12-08
KR970065771A (ko) 1997-10-13

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Legal Events

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