TW329564B - The bottom electrode of IC capacitor and its manufacturing method - Google Patents

The bottom electrode of IC capacitor and its manufacturing method

Info

Publication number
TW329564B
TW329564B TW085110425A TW85110425A TW329564B TW 329564 B TW329564 B TW 329564B TW 085110425 A TW085110425 A TW 085110425A TW 85110425 A TW85110425 A TW 85110425A TW 329564 B TW329564 B TW 329564B
Authority
TW
Taiwan
Prior art keywords
bottom electrode
region
capacitor
manufacturing
substrate
Prior art date
Application number
TW085110425A
Other languages
English (en)
Inventor
Azuma Masamichi
A Paz De Araujo Carlos
D Cuchiaro Joseph
Original Assignee
Symetrix Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Symetrix Corp filed Critical Symetrix Corp
Application granted granted Critical
Publication of TW329564B publication Critical patent/TW329564B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
TW085110425A 1995-04-26 1996-08-27 The bottom electrode of IC capacitor and its manufacturing method TW329564B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/427,897 US5708302A (en) 1995-04-26 1995-04-26 Bottom electrode structure for dielectric capacitors

Publications (1)

Publication Number Publication Date
TW329564B true TW329564B (en) 1998-04-11

Family

ID=23696756

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085110425A TW329564B (en) 1995-04-26 1996-08-27 The bottom electrode of IC capacitor and its manufacturing method

Country Status (8)

Country Link
US (1) US5708302A (zh)
EP (1) EP0823126B1 (zh)
JP (1) JPH11511903A (zh)
KR (1) KR100313468B1 (zh)
CN (1) CN1181840A (zh)
DE (1) DE69624350T2 (zh)
TW (1) TW329564B (zh)
WO (1) WO1996034407A1 (zh)

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Publication number Priority date Publication date Assignee Title
US6660610B2 (en) * 1996-07-08 2003-12-09 Micron Technology, Inc. Devices having improved capacitance and methods of their fabrication
JPH10209392A (ja) * 1997-01-22 1998-08-07 Sony Corp 半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法
US5784310A (en) * 1997-03-03 1998-07-21 Symetrix Corporation Low imprint ferroelectric material for long retention memory and method of making the same
US6104049A (en) * 1997-03-03 2000-08-15 Symetrix Corporation Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same
US6051879A (en) 1997-12-16 2000-04-18 Micron Technology, Inc. Electrical interconnection for attachment to a substrate
KR100505455B1 (ko) * 1997-12-30 2005-10-07 주식회사 하이닉스반도체 반도체 소자의 캐패시터 형성 방법
US6541375B1 (en) * 1998-06-30 2003-04-01 Matsushita Electric Industrial Co., Ltd. DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention
KR100293720B1 (ko) 1998-10-01 2001-07-12 박종섭 반도체 소자의 캐패시터 형성 방법
US6541806B2 (en) * 1999-01-14 2003-04-01 Symetrix Corporation Ferroelectric device with capping layer and method of making same
US6465828B2 (en) 1999-07-30 2002-10-15 Micron Technology, Inc. Semiconductor container structure with diffusion barrier
DE19937503C1 (de) * 1999-08-09 2001-01-04 Siemens Ag Verfahren zum Ätzen von wismuthaltigen Oxidfilmen
DE19959711A1 (de) * 1999-12-10 2001-06-21 Infineon Technologies Ag Verfahren zur Herstellung einer strukturierten Metallschicht
JP3608459B2 (ja) * 1999-12-28 2005-01-12 株式会社村田製作所 薄膜積層体、強誘電体薄膜素子およびそれらの製造方法
US6417537B1 (en) * 2000-01-18 2002-07-09 Micron Technology, Inc. Metal oxynitride capacitor barrier layer
DE10041699A1 (de) * 2000-08-24 2002-03-21 Infineon Technologies Ag Niedertemperatur-Prozessierung ferroelektrischer Strontium-Wismuth-Tantalat-Schichten und Herstellung ferroelektrischer Bauelemente daraus
US7327582B2 (en) * 2000-09-21 2008-02-05 Ultrasource, Inc. Integrated thin film capacitor/inductor/interconnect system and method
US6890629B2 (en) 2001-09-21 2005-05-10 Michael D. Casper Integrated thin film capacitor/inductor/interconnect system and method
AU2001296281A1 (en) 2000-09-21 2002-04-02 Michaeld. Casper Integrated thin film capacitor/inductor/interconnect system and method
US7914755B2 (en) * 2001-04-12 2011-03-29 Eestor, Inc. Method of preparing ceramic powders using chelate precursors
US6489645B1 (en) * 2001-07-03 2002-12-03 Matsushita Electric Industrial Co., Ltd. Integrated circuit device including a layered superlattice material with an interface buffer layer
US6998696B2 (en) 2001-09-21 2006-02-14 Casper Michael D Integrated thin film capacitor/inductor/interconnect system and method
US7425877B2 (en) * 2001-09-21 2008-09-16 Ultrasource, Inc. Lange coupler system and method
US7030425B1 (en) * 2002-10-01 2006-04-18 Tram, Inc. Buried emitter contact for thyristor-based semiconductor device
KR100524935B1 (ko) * 2002-11-04 2005-10-31 삼성전자주식회사 반도체 메모리 소자의 제조방법
US7824990B2 (en) * 2005-12-05 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-metal-oxide high-K gate dielectrics
US7545042B2 (en) * 2005-12-22 2009-06-09 Princo Corp. Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure
US8853116B2 (en) 2006-08-02 2014-10-07 Eestor, Inc. Method of preparing ceramic powders
US7993611B2 (en) * 2006-08-02 2011-08-09 Eestor, Inc. Method of preparing ceramic powders using ammonium oxalate
US20100285316A1 (en) * 2009-02-27 2010-11-11 Eestor, Inc. Method of Preparing Ceramic Powders
WO2010099517A2 (en) * 2009-02-27 2010-09-02 Eestor, Inc. Reaction tube and hydrothermal processing for the wet chemical co-precipitation of oxide powders
CN108122790B (zh) 2016-11-29 2020-12-18 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
EP4611500A1 (en) * 2024-02-28 2025-09-03 Huawei Technologies Co., Ltd. Ferroelectric device and method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4300149A (en) * 1979-09-04 1981-11-10 International Business Machines Corporation Gold-tantalum-titanium/tungsten alloy contact for semiconductor devices and having a gold/tantalum intermetallic barrier region intermediate the gold and alloy elements
US5046043A (en) * 1987-10-08 1991-09-03 National Semiconductor Corporation Ferroelectric capacitor and memory cell including barrier and isolation layers
US5005102A (en) * 1989-06-20 1991-04-02 Ramtron Corporation Multilayer electrodes for integrated circuit capacitors
EP0490288A3 (en) * 1990-12-11 1992-09-02 Ramtron Corporation Process for fabricating pzt capacitors as integrated circuit memory elements and a capacitor storage element
US5348894A (en) * 1993-01-27 1994-09-20 Texas Instruments Incorporated Method of forming electrical connections to high dielectric constant materials

Also Published As

Publication number Publication date
KR100313468B1 (ko) 2002-01-17
US5708302A (en) 1998-01-13
CN1181840A (zh) 1998-05-13
DE69624350T2 (de) 2003-06-26
DE69624350D1 (de) 2002-11-21
KR19990008079A (ko) 1999-01-25
WO1996034407A1 (en) 1996-10-31
JPH11511903A (ja) 1999-10-12
EP0823126A1 (en) 1998-02-11
EP0823126B1 (en) 2002-10-16

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