TW334579B - Semiconductor device and manufacture the same - Google Patents
Semiconductor device and manufacture the sameInfo
- Publication number
- TW334579B TW334579B TW085116284A TW85116284A TW334579B TW 334579 B TW334579 B TW 334579B TW 085116284 A TW085116284 A TW 085116284A TW 85116284 A TW85116284 A TW 85116284A TW 334579 B TW334579 B TW 334579B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- thermally oxidized
- silicon film
- mask
- conducted
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 229910052759 nickel Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229940078494 nickel acetate Drugs 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
A silicon oxide film 202 and an amorphous silicon film 203 are formed on a quartz substrate 201. A mask 204, on which an aperture 205 is provided in such a manner that the amorphous silicon film 203 is exposed, is formed. Then, a nickel acetate solution, containing a nickel element, is applied and heat treatmen is conducted. A crystal grown film 207 advances in parallel with the substrate 201 from the aperture 205 toward the circumference, and a silicon film 208, having a transversely grown region, is formed. Then, a mask 204 is removed, a thermally oxidized film 209 is formed by heat treatment, and a nickel element is taken into the thermally oxidized film 209. Then, the thermally oxidized film 209 is removed, and a crystalline silicon film 208 is formed. Then, a pattern 210 is formed in such a manner that the direction, which links a source region and a drain region, and the orientation of crystallization are coincided with each other, and etching treatment etc. is conducted. By the way to make it available to conduct a high speed operation.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5833496 | 1996-02-20 | ||
| JP8875996 | 1996-03-17 | ||
| JP32464496A JP3645378B2 (en) | 1996-01-19 | 1996-11-19 | Method for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW334579B true TW334579B (en) | 1998-06-21 |
Family
ID=58262992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085116284A TW334579B (en) | 1996-02-20 | 1996-12-30 | Semiconductor device and manufacture the same |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW334579B (en) |
-
1996
- 1996-12-30 TW TW085116284A patent/TW334579B/en not_active IP Right Cessation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |