TW337596B - Process for producing self-aligned silicide - Google Patents
Process for producing self-aligned silicideInfo
- Publication number
- TW337596B TW337596B TW085115376A TW85115376A TW337596B TW 337596 B TW337596 B TW 337596B TW 085115376 A TW085115376 A TW 085115376A TW 85115376 A TW85115376 A TW 85115376A TW 337596 B TW337596 B TW 337596B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- metal layer
- tisi2
- tin
- aligned silicide
- Prior art date
Links
- 229910021332 silicide Inorganic materials 0.000 title abstract 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 8
- 229910008479 TiSi2 Inorganic materials 0.000 abstract 5
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 abstract 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
Landscapes
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
A process for producing a self-aligned silicide, which comprises: (a) forming a first Ti metal layer on a MOS structure defined with a gate and formed with a source/drain active region; (b) forming a TiN layer on the Ti metal layer; (c) forming a second Ti metal layer on the TiN silicide; (d) heating the first Ti metal layer, TiN layer and the second Ti metal layer so that silicon (Si) in the gate, source/drain active region and the first Ti metal layer form a TiSi2 layer; (e) removing the second Ti metal layer, TiN layer and the first Ti metal layer which is not reacted into TiSi2 with silicon; and (f) heating the TiSi2 layer to convert the TiSi2 layer into a TiSi2 layer with a lower resistivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW085115376A TW337596B (en) | 1996-12-12 | 1996-12-12 | Process for producing self-aligned silicide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW085115376A TW337596B (en) | 1996-12-12 | 1996-12-12 | Process for producing self-aligned silicide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW337596B true TW337596B (en) | 1998-08-01 |
Family
ID=58263216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085115376A TW337596B (en) | 1996-12-12 | 1996-12-12 | Process for producing self-aligned silicide |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW337596B (en) |
-
1996
- 1996-12-12 TW TW085115376A patent/TW337596B/en not_active IP Right Cessation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |