TW340202B - Overerase correction for flash memory which limits overerase and prevents erase verify errors - Google Patents

Overerase correction for flash memory which limits overerase and prevents erase verify errors

Info

Publication number
TW340202B
TW340202B TW084113742A TW84113742A TW340202B TW 340202 B TW340202 B TW 340202B TW 084113742 A TW084113742 A TW 084113742A TW 84113742 A TW84113742 A TW 84113742A TW 340202 B TW340202 B TW 340202B
Authority
TW
Taiwan
Prior art keywords
overerase
erasing
flash memory
correction
limits
Prior art date
Application number
TW084113742A
Other languages
English (en)
Inventor
E Cleveland Lee
K Chang Chung
Tang Yuan
S Leong Nancy
D Fliesler Michael
Kuo Tiao-Hua
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of TW340202B publication Critical patent/TW340202B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells

Landscapes

  • Read Only Memory (AREA)
TW084113742A 1995-10-24 1995-12-22 Overerase correction for flash memory which limits overerase and prevents erase verify errors TW340202B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/547,494 US5642311A (en) 1995-10-24 1995-10-24 Overerase correction for flash memory which limits overerase and prevents erase verify errors

Publications (1)

Publication Number Publication Date
TW340202B true TW340202B (en) 1998-09-11

Family

ID=24184870

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084113742A TW340202B (en) 1995-10-24 1995-12-22 Overerase correction for flash memory which limits overerase and prevents erase verify errors

Country Status (5)

Country Link
US (1) US5642311A (zh)
EP (1) EP0857346B1 (zh)
DE (1) DE69603742T2 (zh)
TW (1) TW340202B (zh)
WO (1) WO1997015928A1 (zh)

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US5912845A (en) * 1997-09-10 1999-06-15 Macronix International Co., Ltd. Method and circuit for substrate current induced hot e- injection (SCIHE) approach for VT convergence at low VCC voltage
US5912836A (en) * 1997-12-01 1999-06-15 Amic Technology, Inc. Circuit for detecting both charge gain and charge loss properties in a non-volatile memory array
US5930174A (en) * 1997-12-11 1999-07-27 Amic Technology, Inc. Circuit and method for erasing flash memory array
EP0932161B1 (en) * 1998-01-22 2004-06-09 STMicroelectronics S.r.l. Method for controlled erasing memory devices, in particular analog and multi-level flash-EEPROM devices
US6587903B2 (en) * 1998-02-27 2003-07-01 Micron Technology, Inc. Soft programming for recovery of overerasure
US6240023B1 (en) 1998-02-27 2001-05-29 Micron Technology, Inc. Method for efficiently executing soft programming of a memory block
US6188604B1 (en) 1998-03-02 2001-02-13 Amic Technology, Inc. Flash memory cell & array with improved pre-program and erase characteristics
US6157572A (en) * 1998-05-27 2000-12-05 Advanced Micro Devices Method for erasing flash electrically erasable programmable read-only memory (EEPROM)
US5901090A (en) * 1998-05-27 1999-05-04 Advanced Micro Devices Method for erasing flash electrically erasable programmable read-only memory (EEPROM)
US5875130A (en) * 1998-05-27 1999-02-23 Advanced Micro Devices Method for programming flash electrically erasable programmable read-only memory
US6052310A (en) * 1998-08-12 2000-04-18 Advanced Micro Devices Method for tightening erase threshold voltage distribution in flash electrically erasable programmable read-only memory (EEPROM)
US6188609B1 (en) * 1999-05-06 2001-02-13 Advanced Micro Devices, Inc. Ramped or stepped gate channel erase for flash memory application
US6122198A (en) * 1999-08-13 2000-09-19 Advanced Micro Devices, Inc. Bit by bit APDE verify for flash memory applications
US6046932A (en) * 1999-08-13 2000-04-04 Advanced Micro Devices, Inc. Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash EEPROM
JP4138173B2 (ja) 1999-08-26 2008-08-20 株式会社ルネサステクノロジ 不揮発性半導体記憶装置およびその消去方法
US6252803B1 (en) * 2000-10-23 2001-06-26 Advanced Micro Devices, Inc. Automatic program disturb with intelligent soft programming for flash cells
JP2002157890A (ja) * 2000-11-16 2002-05-31 Mitsubishi Electric Corp 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法
TW504702B (en) * 2001-04-13 2002-10-01 Amic Technology Corp Circuit and method for correcting overerased flash memory cells
US6400608B1 (en) * 2001-04-25 2002-06-04 Advanced Micro Devices, Inc. Accurate verify apparatus and method for NOR flash memory cells in the presence of high column leakage
EP1271552A3 (en) * 2001-06-21 2005-08-17 STMicroelectronics S.r.l. A method of refreshing an electrically erasable and programmable non-volatile memory
US6614695B2 (en) * 2001-08-24 2003-09-02 Micron Technology, Inc. Non-volatile memory with block erase
US7057935B2 (en) * 2001-08-30 2006-06-06 Micron Technology, Inc. Erase verify for non-volatile memory
JP3984445B2 (ja) * 2001-09-12 2007-10-03 シャープ株式会社 不揮発性半導体メモリ装置のオーバーイレースセル検出方法
US6654283B1 (en) 2001-12-11 2003-11-25 Advanced Micro Devices Inc. Flash memory array architecture and method of programming, erasing and reading thereof
US6646914B1 (en) 2002-03-12 2003-11-11 Advanced Micro Devices, Inc. Flash memory array architecture having staggered metal lines
US20040020066A1 (en) * 2002-08-02 2004-02-05 Morey Walter L. Siding revealer gauge
US6724662B2 (en) * 2002-09-04 2004-04-20 Atmel Corporation Method of recovering overerased bits in a memory device
US6754109B1 (en) 2002-10-29 2004-06-22 Advanced Micro Devices, Inc. Method of programming memory cells
JP3913704B2 (ja) * 2003-04-22 2007-05-09 株式会社東芝 不揮発性半導体記憶装置及びこれを用いた電子装置
JP4262033B2 (ja) * 2003-08-27 2009-05-13 株式会社ルネサステクノロジ 半導体集積回路
US7023734B2 (en) * 2004-03-03 2006-04-04 Elite Semiconductor Memory Technology, Inc. Overerase correction in flash EEPROM memory
US7009882B2 (en) * 2004-03-03 2006-03-07 Elite Semiconductor Memory Technology, Inc. Bit switch voltage drop compensation during programming in nonvolatile memory
TWI247311B (en) * 2004-03-25 2006-01-11 Elite Semiconductor Esmt Circuit and method for preventing nonvolatile memory from over erasure
US7035131B2 (en) * 2004-05-06 2006-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Dynamic random access memory cell leakage current detector
US7235997B2 (en) * 2004-07-14 2007-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS leakage current meter
US7599228B1 (en) 2004-11-01 2009-10-06 Spansion L.L.C. Flash memory device having increased over-erase correction efficiency and robustness against device variations
TW200727303A (en) * 2006-01-08 2007-07-16 Ememory Technology Inc A method and memory capable of improving the endurance of memory
US20080084737A1 (en) * 2006-06-30 2008-04-10 Eon Silicon Solutions, Inc. Usa Method of achieving zero column leakage after erase in flash EPROM
US7382661B1 (en) 2007-02-07 2008-06-03 Elite Semiconductor Memory Technology Inc. Semiconductor memory device having improved programming circuit and method of programming same
US7525849B2 (en) * 2007-02-13 2009-04-28 Elite Semiconductor Memory Technology, Inc. Flash memory with sequential programming
KR20170045406A (ko) * 2015-10-16 2017-04-27 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법

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US5237535A (en) * 1991-10-09 1993-08-17 Intel Corporation Method of repairing overerased cells in a flash memory
US5347489A (en) * 1992-04-21 1994-09-13 Intel Corporation Method and circuitry for preconditioning shorted rows in a nonvolatile semiconductor memory incorporating row redundancy
US5335198A (en) * 1993-05-06 1994-08-02 Advanced Micro Devices, Inc. Flash EEPROM array with high endurance
US5359558A (en) * 1993-08-23 1994-10-25 Advanced Micro Devices, Inc. Flash eeprom array with improved high endurance
US5424993A (en) * 1993-11-15 1995-06-13 Micron Technology, Inc. Programming method for the selective healing of over-erased cells on a flash erasable programmable read-only memory device

Also Published As

Publication number Publication date
DE69603742D1 (de) 1999-09-16
WO1997015928A1 (en) 1997-05-01
US5642311A (en) 1997-06-24
EP0857346A1 (en) 1998-08-12
EP0857346B1 (en) 1999-08-11
DE69603742T2 (de) 2000-04-13

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees