TW344862B - Manufacture of semiconductor wafer - Google Patents

Manufacture of semiconductor wafer

Info

Publication number
TW344862B
TW344862B TW086107020A TW86107020A TW344862B TW 344862 B TW344862 B TW 344862B TW 086107020 A TW086107020 A TW 086107020A TW 86107020 A TW86107020 A TW 86107020A TW 344862 B TW344862 B TW 344862B
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
manufacture
wafer
alkali
etching
Prior art date
Application number
TW086107020A
Other languages
English (en)
Inventor
Fumitaka Kai
Masahiko Maeda
Kenji Kawate
Original Assignee
Komatsu Denshi Kinzoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Application granted granted Critical
Publication of TW344862B publication Critical patent/TW344862B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW086107020A 1996-09-12 1997-05-24 Manufacture of semiconductor wafer TW344862B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8279819A JPH1092777A (ja) 1996-09-12 1996-09-12 半導体ウェハの製造方法

Publications (1)

Publication Number Publication Date
TW344862B true TW344862B (en) 1998-11-11

Family

ID=17616364

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086107020A TW344862B (en) 1996-09-12 1997-05-24 Manufacture of semiconductor wafer

Country Status (3)

Country Link
US (1) US5899731A (zh)
JP (1) JPH1092777A (zh)
TW (1) TW344862B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI650811B (zh) * 2016-09-26 2019-02-11 日商斯庫林集團股份有限公司 基板處理方法及基板處理裝置

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0928017B1 (en) 1997-12-09 2014-09-10 Shin-Etsu Handotai Co., Ltd. Semiconductor wafer processing method
MY119304A (en) * 1997-12-11 2005-04-30 Shinetsu Handotai Kk Silicon wafer etching method and silicon wafer etchant
US6632277B2 (en) 1999-07-14 2003-10-14 Seh America, Inc. Optimized silicon wafer gettering for advanced semiconductor devices
US6454852B2 (en) 1999-07-14 2002-09-24 Seh America, Inc. High efficiency silicon wafer optimized for advanced semiconductor devices
US6395085B2 (en) 1999-07-14 2002-05-28 Seh America, Inc. Purity silicon wafer for use in advanced semiconductor devices
US6716722B1 (en) 1999-07-15 2004-04-06 Shin-Etsu Handotai Co., Ltd. Method of producing a bonded wafer and the bonded wafer
KR100297738B1 (ko) * 1999-10-07 2001-11-02 윤종용 챔퍼가 형성된 금속 실리사이드층을 갖춘 반도체소자의 제조방법
EP1313135A1 (en) * 2000-06-29 2003-05-21 Shin-Etsu Handotai Co., Ltd Method for processing semiconductor wafer and semiconductor wafer
JP2003068996A (ja) * 2001-08-22 2003-03-07 Sumitomo Mitsubishi Silicon Corp 張り合わせシリコン基板の製造方法
JP2003077875A (ja) * 2001-09-04 2003-03-14 Toshiba Ceramics Co Ltd シリコンウェーハの洗浄方法
JP2003163335A (ja) * 2001-11-27 2003-06-06 Shin Etsu Handotai Co Ltd 貼り合わせウェーハの製造方法
KR100797734B1 (ko) 2003-12-05 2008-01-24 가부시키가이샤 섬코 편면 경면 웨이퍼의 제조 방법
JP2005203507A (ja) * 2004-01-14 2005-07-28 Siltronic Japan Corp 半導体ウェーハの加工方法および半導体ウェーハ処理装置
JP4857738B2 (ja) * 2005-11-30 2012-01-18 信越半導体株式会社 半導体ウエーハの洗浄方法および製造方法
JP2007150167A (ja) * 2005-11-30 2007-06-14 Shin Etsu Handotai Co Ltd 半導体ウエーハの平面研削方法および製造方法
JP2008166805A (ja) * 2006-12-29 2008-07-17 Siltron Inc 高平坦度シリコンウェハーの製造方法
JP2009200360A (ja) * 2008-02-22 2009-09-03 Tkx:Kk シリコン部材の表面処理方法
WO2016098701A1 (ja) * 2014-12-15 2016-06-23 シャープ株式会社 半導体基板の製造方法、光電変換素子の製造方法、半導体基板および光電変換素子
TW202316513A (zh) * 2021-08-27 2023-04-16 日商東京威力科創股份有限公司 基板處理方法及基板處理系統

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08126873A (ja) * 1994-10-28 1996-05-21 Nec Corp 電子部品等の洗浄方法及び装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI650811B (zh) * 2016-09-26 2019-02-11 日商斯庫林集團股份有限公司 基板處理方法及基板處理裝置

Also Published As

Publication number Publication date
JPH1092777A (ja) 1998-04-10
US5899731A (en) 1999-05-04

Similar Documents

Publication Publication Date Title
TW344862B (en) Manufacture of semiconductor wafer
TW346670B (en) Fabrication process and fabrication apparatus of SOI substrate
TW349244B (en) Method of fabricating a semiconductor device using a CMP process and a polishing apparatus for such a CMP process
AU1683899A (en) Abrasive, method of polishing wafer, and method of producing semiconductor device
MY119277A (en) Method of manufacturing semiconductor monocrystalline mirror-surface wafers which includes a gas phase etching process, and semiconductor monocrystalline mirror-surface wafers manufactured by the method
AU1670597A (en) Cerium oxide abrasive, semiconductor chip, semiconductor device, process for the production of them, and method for the polishing of substrates
IL155856A0 (en) Abrasive article having a window system for polishing wafers, and methods
TW354276B (en) Methods of grinding and grinding machine, especially for carrying out said grinding method
WO2002001620A3 (en) Two step chemical mechanical polishing process
WO2001078116A3 (en) System for the preferential removal of silicon oxide
AU4518297A (en) Process for producing semiconductor article
MY133102A (en) Method for treating substrates for microelectronics and substrates obtained according to said method
ZA9711554B (en) Process for the production of higher oxo alcohols.
EP1055486A3 (en) Dressing apparatus and polishing apparatus
EP1005069A3 (en) Semiconductor wafer and method for fabrication thereof
TW332903B (en) The manufacture of semiconductor wafer
TW327242B (en) Method of global planarization in fabricating integrated circuit devices
WO2000013852A8 (en) Apparatuses and methods for polishing semiconductor wafers
GB2296818B (en) Method of producing semiconductor wafer
MY133452A (en) Polishing method for wafer and holding plate
TW365020B (en) Manufacturing method for semiconductor wafer
AU2003232723A1 (en) Nut and method for the production thereof
TW330881B (en) The apparatus & method for shaping a polishing pad & polishing semiconductor wafers
MY123286A (en) Semiconductor wafer manufacturing method
TW200420380A (en) Polishing method