TW347577B - Bottom electrode structure for integrated circuit capacitors and method of making the same - Google Patents

Bottom electrode structure for integrated circuit capacitors and method of making the same

Info

Publication number
TW347577B
TW347577B TW085110426A TW85110426A TW347577B TW 347577 B TW347577 B TW 347577B TW 085110426 A TW085110426 A TW 085110426A TW 85110426 A TW85110426 A TW 85110426A TW 347577 B TW347577 B TW 347577B
Authority
TW
Taiwan
Prior art keywords
integrated circuit
making
same
electrode structure
bottom electrode
Prior art date
Application number
TW085110426A
Other languages
Chinese (zh)
Inventor
Azuma Masamichi
A Paz De Araujo Carlos
D Cuchiaro Joseph
Original Assignee
Symetrix Corp
Matsushita Denshi Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Symetrix Corp, Matsushita Denshi Kk filed Critical Symetrix Corp
Application granted granted Critical
Publication of TW347577B publication Critical patent/TW347577B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

An integrated circuit component (20) comprising: a substrate (22) and a metal wiring layer (26); the integrated circuit being characterized in: a layer sequence being formed of a material between the substrate and the metal wiring layer, the layer sequence at least comprising a buffer layer made of a layered superlattice material, the layer sequence essentially having no extra wiring layer.
TW085110426A 1995-06-07 1996-08-27 Bottom electrode structure for integrated circuit capacitors and method of making the same TW347577B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47343295A 1995-06-07 1995-06-07

Publications (1)

Publication Number Publication Date
TW347577B true TW347577B (en) 1998-12-11

Family

ID=23879500

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085110426A TW347577B (en) 1995-06-07 1996-08-27 Bottom electrode structure for integrated circuit capacitors and method of making the same

Country Status (7)

Country Link
EP (1) EP0834196A1 (en)
JP (1) JPH11511293A (en)
KR (1) KR100333234B1 (en)
CN (1) CN1199506A (en)
CA (1) CA2223106A1 (en)
TW (1) TW347577B (en)
WO (1) WO1996041375A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3108039B2 (en) * 1997-01-18 2000-11-13 東京応化工業株式会社 Coating solution for forming a Bi-based ferroelectric thin film, ferroelectric thin film formed using the same, and ferroelectric memory
JP3195265B2 (en) * 1997-01-18 2001-08-06 東京応化工業株式会社 Coating solution for forming Bi-based ferroelectric thin film, ferroelectric thin film formed using the same, and ferroelectric memory
US6104049A (en) * 1997-03-03 2000-08-15 Symetrix Corporation Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same
JPH10313097A (en) * 1997-05-13 1998-11-24 Sharp Corp Ferroelectric thin film, manufacturing method and device comprising ferroelectric thin film
US6133092A (en) * 1998-07-24 2000-10-17 Symetrix Corporation Low temperature process for fabricating layered superlattice materials and making electronic devices including same
KR100293720B1 (en) * 1998-10-01 2001-07-12 박종섭 Capacitor Formation Method of Semiconductor Device
US6399521B1 (en) * 1999-05-21 2002-06-04 Sharp Laboratories Of America, Inc. Composite iridium barrier structure with oxidized refractory metal companion barrier and method for same
US6190963B1 (en) * 1999-05-21 2001-02-20 Sharp Laboratories Of America, Inc. Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for same
US6420740B1 (en) * 1999-05-24 2002-07-16 Sharp Laboratories Of America, Inc. Lead germanate ferroelectric structure with multi-layered electrode
US6788522B1 (en) * 2003-02-26 2004-09-07 Tdk Corporation Multi-layered unit including electrode and dielectric layer
WO2008156224A1 (en) * 2007-06-18 2008-12-24 Min A Lee Laminated structure having high resistance metal thin film of enhanced durability and reliability and forming method thereof
CN101810047A (en) 2007-09-27 2010-08-18 交互数字专利控股公司 Method and apparatus for allocating radio resources for transmitting message parts in enhanced RACH

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5046043A (en) * 1987-10-08 1991-09-03 National Semiconductor Corporation Ferroelectric capacitor and memory cell including barrier and isolation layers
EP0415751B1 (en) * 1989-08-30 1995-03-15 Nec Corporation Thin film capacitor and manufacturing method thereof
US5423285A (en) * 1991-02-25 1995-06-13 Olympus Optical Co., Ltd. Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications
US5164808A (en) * 1991-08-09 1992-11-17 Radiant Technologies Platinum electrode structure for use in conjunction with ferroelectric materials
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5248564A (en) * 1992-12-09 1993-09-28 Bell Communications Research, Inc. C-axis perovskite thin films grown on silicon dioxide
US5387459A (en) * 1992-12-17 1995-02-07 Eastman Kodak Company Multilayer structure having an epitaxial metal electrode

Also Published As

Publication number Publication date
CA2223106A1 (en) 1996-12-19
KR100333234B1 (en) 2002-06-20
KR19990022075A (en) 1999-03-25
JPH11511293A (en) 1999-09-28
CN1199506A (en) 1998-11-18
WO1996041375A1 (en) 1996-12-19
EP0834196A1 (en) 1998-04-08

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