TW350978B - Splash coating device for manufacturing of IC barrier films - Google Patents

Splash coating device for manufacturing of IC barrier films

Info

Publication number: TW350978B
Authority: TW; Taiwan
Prior art keywords: titanium; substrate; manufacturing; barrier films; splash coating
Prior art date: 1997-02-24

Application number

TW086115675A

Other languages

English (en)

Chinese (zh)

Inventor

Masahiko Kobayashi

Original Assignee

Anelva Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-02-24

Filing date

1997-10-23

Publication date

1999-01-21

1997-10-23 Application filed by Anelva Corp filed Critical Anelva Corp

1999-01-21 Application granted granted Critical

1999-01-21 Publication of TW350978B publication Critical patent/TW350978B/zh

Links

239000011248 coating agent Substances 0.000 title abstract 3
238000000576 coating method Methods 0.000 title abstract 3
230000004888 barrier function Effects 0.000 title abstract 2
238000004519 manufacturing process Methods 0.000 title abstract 2
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 5
229910052719 titanium Inorganic materials 0.000 abstract 5
239000010936 titanium Substances 0.000 abstract 5
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
239000000758 substrate Substances 0.000 abstract 4
230000005684 electric field Effects 0.000 abstract 2
229910052757 nitrogen Inorganic materials 0.000 abstract 2
NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 abstract 1
238000000137 annealing Methods 0.000 abstract 1
238000010438 heat treatment Methods 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/24—Nitriding

Landscapes

Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Physical Vapour Deposition (AREA)
Electrodes Of Semiconductors (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

TW086115675A 1997-02-24 1997-10-23 Splash coating device for manufacturing of IC barrier films TW350978B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP9055550A JPH10237639A (ja)	1997-02-24	1997-02-24	集積回路用バリア膜を作成するスパッタリング装置

Publications (1)

Publication Number	Publication Date
TW350978B true TW350978B (en)	1999-01-21

Family

ID=13001823

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW086115675A TW350978B (en)	1997-02-24	1997-10-23	Splash coating device for manufacturing of IC barrier films

Country Status (3)

Country	Link
JP (1)	JPH10237639A (2)
KR (1)	KR19980070035A (2)
TW (1)	TW350978B (2)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5962923A (en) *	1995-08-07	1999-10-05	Applied Materials, Inc.	Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
KR100440261B1 (ko) *	2001-12-22	2004-07-15	주식회사 하이닉스반도체	반도체 소자의 금속 배선 형성 방법
US9659758B2 (en)	2005-03-22	2017-05-23	Honeywell International Inc.	Coils utilized in vapor deposition applications and methods of production
JP5521136B2 (ja) *	2007-10-26	2014-06-11	エリコン・アドヴァンスド・テクノロジーズ・アーゲー	３次元半導体パッケージングにおけるＳｉ貫通ビアのメタライゼーションへのＨＩＰＩＭＳの適用
JP5808623B2 (ja) *	2011-09-07	2015-11-10	株式会社アルバック	バリアメタル層の形成方法
US11183373B2 (en)	2017-10-11	2021-11-23	Honeywell International Inc.	Multi-patterned sputter traps and methods of making
CN115110025B (zh) *	2022-07-20	2023-10-20	苏州大学	一种螺旋波等离子体溅射沉积氮化钨薄膜的方法
CN115074689B (zh) *	2022-07-21	2023-06-02	苏州大学	一种螺旋波等离子体反应溅射沉积制备氮化钛薄膜的方法

1997
- 1997-02-24 JP JP9055550A patent/JPH10237639A/ja active Pending
- 1997-10-23 TW TW086115675A patent/TW350978B/zh active
- 1997-10-24 KR KR1019970054594A patent/KR19980070035A/ko not_active Ceased

Also Published As

Publication number	Publication date
JPH10237639A (ja)	1998-09-08
KR19980070035A (ko)	1998-10-26

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