TW363226B - Heat treatment method for silicon wafer - Google Patents
Heat treatment method for silicon waferInfo
- Publication number
- TW363226B TW363226B TW084112414A TW84112414A TW363226B TW 363226 B TW363226 B TW 363226B TW 084112414 A TW084112414 A TW 084112414A TW 84112414 A TW84112414 A TW 84112414A TW 363226 B TW363226 B TW 363226B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- hydrogen
- heat treatment
- mechanical strength
- oxygen concentration
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 6
- 239000001257 hydrogen Substances 0.000 abstract 6
- 229910052739 hydrogen Inorganic materials 0.000 abstract 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 4
- 239000001301 oxygen Substances 0.000 abstract 4
- 229910052760 oxygen Inorganic materials 0.000 abstract 4
- 230000007423 decrease Effects 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14563094A JP3458342B2 (ja) | 1994-06-03 | 1994-06-03 | シリコンウェーハの製造方法およびシリコンウェーハ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW363226B true TW363226B (en) | 1999-07-01 |
Family
ID=15389455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084112414A TW363226B (en) | 1994-06-03 | 1995-11-22 | Heat treatment method for silicon wafer |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3458342B2 (ja) |
| TW (1) | TW363226B (ja) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994761A (en) | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
| US6190631B1 (en) | 1997-04-09 | 2001-02-20 | Memc Electronic Materials, Inc. | Low defect density, ideal oxygen precipitating silicon |
| US6828690B1 (en) | 1998-08-05 | 2004-12-07 | Memc Electronic Materials, Inc. | Non-uniform minority carrier lifetime distributions in high performance silicon power devices |
| EP1114454A2 (en) | 1998-09-02 | 2001-07-11 | MEMC Electronic Materials, Inc. | Silicon on insulator structure from low defect density single crystal silicon |
| US6336968B1 (en) | 1998-09-02 | 2002-01-08 | Memc Electronic Materials, Inc. | Non-oxygen precipitating czochralski silicon wafers |
| JP4405082B2 (ja) | 1998-09-02 | 2010-01-27 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 内部ゲッタリング性の改良された熱アニーリングされたウエハ |
| US6191010B1 (en) | 1998-09-02 | 2001-02-20 | Memc Electronic Materials, Inc. | Process for preparing an ideal oxygen precipitating silicon wafer |
| US6416836B1 (en) | 1998-10-14 | 2002-07-09 | Memc Electronic Materials, Inc. | Thermally annealed, low defect density single crystal silicon |
| US6284384B1 (en) | 1998-12-09 | 2001-09-04 | Memc Electronic Materials, Inc. | Epitaxial silicon wafer with intrinsic gettering |
| US20030051656A1 (en) | 1999-06-14 | 2003-03-20 | Charles Chiun-Chieh Yang | Method for the preparation of an epitaxial silicon wafer with intrinsic gettering |
| US6599815B1 (en) | 2000-06-30 | 2003-07-29 | Memc Electronic Materials, Inc. | Method and apparatus for forming a silicon wafer with a denuded zone |
| US6339016B1 (en) | 2000-06-30 | 2002-01-15 | Memc Electronic Materials, Inc. | Method and apparatus for forming an epitaxial silicon wafer with a denuded zone |
| JP2004537161A (ja) | 2001-04-11 | 2004-12-09 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 高抵抗率ｃｚシリコンにおけるサーマルドナー生成の制御 |
| KR100399946B1 (ko) * | 2001-06-30 | 2003-09-29 | 주식회사 하이닉스반도체 | 유동성 절연막의 열처리 방법 |
| US6955718B2 (en) | 2003-07-08 | 2005-10-18 | Memc Electronic Materials, Inc. | Process for preparing a stabilized ideal oxygen precipitating silicon wafer |
| KR100695004B1 (ko) * | 2005-11-01 | 2007-03-13 | 주식회사 하이닉스반도체 | 반도체 소자의 산화막 형성 방법 |
| US7485928B2 (en) | 2005-11-09 | 2009-02-03 | Memc Electronic Materials, Inc. | Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering |
| US8426297B2 (en) | 2008-08-08 | 2013-04-23 | Sumco Techxiv Corporation | Method for manufacturing semiconductor wafer |
-
1994
- 1994-06-03 JP JP14563094A patent/JP3458342B2/ja not_active Expired - Lifetime
-
1995
- 1995-11-22 TW TW084112414A patent/TW363226B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07335657A (ja) | 1995-12-22 |
| JP3458342B2 (ja) | 2003-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW363226B (en) | Heat treatment method for silicon wafer | |
| LT97088A (en) | Wastewater treatment method and plant | |
| EP1482066A4 (en) | SURFACE-TREATED STEEL PLATE AND MANUFACTURING METHOD THEREFOR | |
| AU6670898A (en) | Hot pressed silicon carbide wafer and method of using it as a dummy wafer | |
| UA27758C2 (uk) | Спосіб регулювання тиску на боці високого тиску пристрою і холодильний чи нагрівальний пристрій (варіанти) | |
| DK0683809T3 (da) | Overflademodificeret silica | |
| NZ297747A (en) | Treatment of wool/animal fibre with a plasma treatment followed by proteolytic enzyme treatment | |
| DK0804316T3 (da) | Værktøj til mekanisk overfladebehandling | |
| HU200794B (en) | Process for expressing malaria antigenes | |
| MY105857A (en) | Method for reforming fats and oils with enzymes. | |
| WO2001064397A3 (en) | Method for reducing tensile stress zones in the surface of a part | |
| GB2370417A (en) | A method and apparatus for forming an under bump metallization structure | |
| DE10292173D2 (de) | Verfahren und Vorrichtung zur Herstellung von Furnieren und von furnierten Teilen sowie Furniere und furnierte Teile | |
| MY120530A (en) | Combination preparation for use in dementia | |
| FR2783001B1 (fr) | Procede pour le traitement sous vide d'un quelconque substrat courbe, notamment un verre de lunettes, et cache propre a la mise en oeuvre d'un tel procede | |
| FR2469426A1 (fr) | Procede pour modifier les proprietes de surface d'articles faconnes en chlorure de polyvinyle, par exposition a un plasma | |
| BG98820A (en) | Method and device for the expansion of tobacco | |
| DE69700957D1 (de) | Verfahren zur durchführung einer behandlung in der anwesenheit einer zentrifugalen kraft sowie vorrichtung dafür | |
| GB9304399D0 (en) | Novel process | |
| HUP9700996A2 (hu) | Tárgy üvegből vagy üveg típusú anyagból, valamint eljárás a tárgy előállítására | |
| DE69030181D1 (de) | Verwendung von cromakalim/brl 38227 zur behandlung der überreaktivität der luftwege | |
| CY1109586T1 (el) | Επεξεργασια λιγνοκυτταρινουχων υποστρωματων με οζον | |
| JPS5719325A (en) | Production of steel product | |
| ES8601163A1 (es) | Un procedimiento para el tratamiento de la madera y de la pasta de madera | |
| JPS5743959A (en) | Polished special strip steel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |