TW364112B - Semiconductor memory having redundancy circuit - Google Patents

Semiconductor memory having redundancy circuit

Info

Publication number
TW364112B
TW364112B TW086113829A TW86113829A TW364112B TW 364112 B TW364112 B TW 364112B TW 086113829 A TW086113829 A TW 086113829A TW 86113829 A TW86113829 A TW 86113829A TW 364112 B TW364112 B TW 364112B
Authority
TW
Taiwan
Prior art keywords
memory
memory cell
judgment device
pad
semiconductor memory
Prior art date
Application number
TW086113829A
Other languages
English (en)
Inventor
Masashi Horiguchi
Shinichi Miyatake
Tathunori Mushya
Yasuhiro Kasama
Yoichi Matsuno
Original Assignee
Hitachi Ltd
Hitachi Ulsi Sys Co Ltd
Hitachi Device Eng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Ulsi Sys Co Ltd, Hitachi Device Eng filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW364112B publication Critical patent/TW364112B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/842—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by introducing a delay in a signal path
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
TW086113829A 1996-09-27 1997-09-23 Semiconductor memory having redundancy circuit TW364112B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25583196A JP3613622B2 (ja) 1996-09-27 1996-09-27 半導体メモリ

Publications (1)

Publication Number Publication Date
TW364112B true TW364112B (en) 1999-07-11

Family

ID=17284218

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086113829A TW364112B (en) 1996-09-27 1997-09-23 Semiconductor memory having redundancy circuit

Country Status (4)

Country Link
US (1) US5983358A (zh)
JP (1) JP3613622B2 (zh)
KR (1) KR100446853B1 (zh)
TW (1) TW364112B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI483261B (zh) * 2011-09-25 2015-05-01 Nanya Technology Corp 記憶體裝置及其操作方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3219148B2 (ja) * 1998-11-26 2001-10-15 日本電気株式会社 データメモリ装置
JP2002015595A (ja) * 2000-06-29 2002-01-18 Sanyo Electric Co Ltd 冗長メモリ回路
JP2002042495A (ja) * 2000-07-21 2002-02-08 Mitsubishi Electric Corp 冗長救済回路、方法および半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0670880B2 (ja) * 1983-01-21 1994-09-07 株式会社日立マイコンシステム 半導体記憶装置
JPS6013398A (ja) * 1983-07-04 1985-01-23 Hitachi Ltd 半導体多値記憶装置
JPH0666394B2 (ja) * 1983-12-16 1994-08-24 富士通株式会社 半導体記憶装置
DE3485595D1 (de) * 1983-12-23 1992-04-23 Hitachi Ltd Halbleiterspeicher mit einer speicherstruktur mit vielfachen pegeln.
JPS62184700A (ja) * 1986-02-10 1987-08-13 Hitachi Ltd 半導体記憶装置
JPH01224998A (ja) * 1988-03-04 1989-09-07 Toshiba Corp 半導体記憶装置
JP3268823B2 (ja) * 1992-05-28 2002-03-25 日本テキサス・インスツルメンツ株式会社 半導体記憶装置
US5550394A (en) * 1993-06-18 1996-08-27 Texas Instruments Incorporated Semiconductor memory device and defective memory cell correction circuit
JP3441161B2 (ja) * 1994-05-26 2003-08-25 株式会社東芝 不揮発性半導体記憶装置
US5528539A (en) * 1994-09-29 1996-06-18 Micron Semiconductor, Inc. High speed global row redundancy system
US5845319A (en) * 1995-08-23 1998-12-01 Fujitsu Limited Disk array device which separates local and physical disks using striping and operation mode selection
US5706292A (en) * 1996-04-25 1998-01-06 Micron Technology, Inc. Layout for a semiconductor memory device having redundant elements

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI483261B (zh) * 2011-09-25 2015-05-01 Nanya Technology Corp 記憶體裝置及其操作方法

Also Published As

Publication number Publication date
JPH10106287A (ja) 1998-04-24
KR100446853B1 (ko) 2004-11-26
US5983358A (en) 1999-11-09
KR19980024926A (ko) 1998-07-06
JP3613622B2 (ja) 2005-01-26

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