TW370570B - Deposition of titanium nitride films having improved uniformity - Google Patents

Deposition of titanium nitride films having improved uniformity

Info

Publication number
TW370570B
TW370570B TW087102666A TW87102666A TW370570B TW 370570 B TW370570 B TW 370570B TW 087102666 A TW087102666 A TW 087102666A TW 87102666 A TW87102666 A TW 87102666A TW 370570 B TW370570 B TW 370570B
Authority
TW
Taiwan
Prior art keywords
deposition
titanium nitride
nitride films
improved uniformity
low pressure
Prior art date
Application number
TW087102666A
Other languages
English (en)
Inventor
Kenny King-Tai Ngan
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW370570B publication Critical patent/TW370570B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW087102666A 1997-02-26 1998-06-22 Deposition of titanium nitride films having improved uniformity TW370570B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/806,966 US6071811A (en) 1997-02-26 1997-02-26 Deposition of titanium nitride films having improved uniformity

Publications (1)

Publication Number Publication Date
TW370570B true TW370570B (en) 1999-09-21

Family

ID=25195246

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087102666A TW370570B (en) 1997-02-26 1998-06-22 Deposition of titanium nitride films having improved uniformity

Country Status (7)

Country Link
US (1) US6071811A (zh)
EP (1) EP0861921B1 (zh)
JP (1) JPH10298747A (zh)
KR (1) KR19980071719A (zh)
DE (1) DE69802726T2 (zh)
SG (1) SG65737A1 (zh)
TW (1) TW370570B (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6706541B1 (en) * 1999-10-20 2004-03-16 Advanced Micro Devices, Inc. Method and apparatus for controlling wafer uniformity using spatially resolved sensors
US6342448B1 (en) * 2000-05-31 2002-01-29 Taiwan Semiconductor Manufacturing Company Method of fabricating barrier adhesion to low-k dielectric layers in a copper damascene process
US6699372B2 (en) 2001-04-16 2004-03-02 Agere Systems Guardian Corporation Method of coil preparation for ionized metal plasma process and method of manufacturing integrated circuits
US7659209B2 (en) 2001-11-14 2010-02-09 Canon Anelva Corporation Barrier metal film production method
US20030091739A1 (en) * 2001-11-14 2003-05-15 Hitoshi Sakamoto Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
KR20030039649A (ko) * 2001-11-14 2003-05-22 조치형 볼펜 볼의 코팅장치 및 방법
KR20030089756A (ko) * 2002-05-18 2003-11-28 주식회사 하이닉스반도체 삼원계 확산배리어막의 형성 방법 및 그를 이용한구리배선의 형성 방법
US7067409B2 (en) * 2004-05-10 2006-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
US7378744B2 (en) * 2004-05-10 2008-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
KR100731993B1 (ko) 2006-02-16 2007-06-27 주식회사 뉴파워 프라즈마 내부 방전 브리지를 갖는 플라즈마 소오스
US9115425B2 (en) 2010-10-18 2015-08-25 Electronics And Telecommunications Research Institute Thin film depositing apparatus
KR101382997B1 (ko) * 2012-02-08 2014-04-08 현대자동차주식회사 코팅층 표면 처리 방법
KR101509639B1 (ko) * 2013-10-18 2015-04-07 주식회사 포스코 방향성 전기강판의 세라믹 분말 코팅용 저압 형성 및 유지 장치
CN113614274A (zh) 2019-03-22 2021-11-05 应用材料公司 用于沉积具有超导膜的多层器件的方法及装置
EP3942088A4 (en) 2019-03-22 2022-12-21 Applied Materials, Inc. Method and apparatus for deposition of metal nitrides
CN110965023A (zh) * 2019-12-25 2020-04-07 北京北方华创微电子装备有限公司 氮化钛薄膜沉积方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1954366C2 (de) * 1969-10-29 1972-02-03 Heraeus Gmbh W C Verfahren und Vorrichtung zur Herstellung von harten UEberzuegen aus Titan- und/oder Tantalverbindungen
GB2085482B (en) * 1980-10-06 1985-03-06 Optical Coating Laboratory Inc Forming thin film oxide layers using reactive evaporation techniques
US5618388A (en) * 1988-02-08 1997-04-08 Optical Coating Laboratory, Inc. Geometries and configurations for magnetron sputtering apparatus
FR2699934B1 (fr) * 1992-12-30 1995-03-17 Lorraine Inst Nat Polytech Procédé de contrôle de la concentration en métalloïde d'un dépôt réalisés par voie physique en phase vapeur réactive à l'aide d'un plasma froid de pulvérisation.
JPH06268083A (ja) * 1993-03-11 1994-09-22 Sony Corp 半導体装置の配線
JP2754176B2 (ja) * 1995-03-13 1998-05-20 エルジイ・セミコン・カンパニイ・リミテッド 緻密なチタン窒化膜及び緻密なチタン窒化膜／薄膜のチタンシリサイドの形成方法及びこれを用いた半導体素子の製造方法
US5604140A (en) * 1995-05-22 1997-02-18 Lg Semicon, Co. Ltd. Method for forming fine titanium nitride film and method for fabricating semiconductor element using the same
US5591672A (en) * 1995-10-27 1997-01-07 Vanguard International Semiconductor Corporation Annealing of titanium - titanium nitride in contact hole
US5801098A (en) * 1996-09-03 1998-09-01 Motorola, Inc. Method of decreasing resistivity in an electrically conductive layer

Also Published As

Publication number Publication date
DE69802726D1 (de) 2002-01-17
EP0861921B1 (en) 2001-12-05
DE69802726T2 (de) 2002-08-08
SG65737A1 (en) 1999-06-22
JPH10298747A (ja) 1998-11-10
KR19980071719A (ko) 1998-10-26
US6071811A (en) 2000-06-06
EP0861921A1 (en) 1998-09-02

Similar Documents

Publication Publication Date Title
TW370570B (en) Deposition of titanium nitride films having improved uniformity
DE60218305D1 (de) Verwendung von unter atmosphärischem druck erzeugten dichten plasmen zur behandlung von abgasen
EP1243667A3 (en) Gas recirculation flow control method and apparatus for use in vacuum system for semiconductor manufacture
KR960035890A (ko) 타이타늄 카보 나이트라이드층의 개질 방법
HU9500429D0 (en) Improved method and apparatus for achieving high reaction rates
WO1999067440A3 (en) Substrate support member with a purge gas channel and pumping system
EP0747366A3 (en) Melamine of improved purity produced by high-pressure, non-catalytic process
TW200510257A (en) Vacuum degassing method for molten glass flow
TW200515187A (en) System and method for a unified composition engine in a graphics processing system
PL369603A1 (en) Coating method and coating
GB2391701A (en) Thermal regulation of an ion implantation system
AU2002357160A1 (en) Copper deposition using copper formate complexes
KR960002624A (ko) 건식 에칭 방법
CA2026902A1 (en) Process for nitrocarburizing components made from steel
TW362137B (en) Vacuum pump
MXPA02011882A (es) Metodo continuo para modificar el almidon y sus derivados por enzimas de ramificacion.
TW370569B (en) Method for depositing golden titanium nitride
MXPA04000691A (es) FLUIDOS DE POZO DE ALTA DENSIDAD TeRMICAMENTE ESTABLES.
AU1902095A (en) Porous metal composite body
CA2326239A1 (fr) Procede de carbonitruration a basse pression de pieces en alliage metallique
AU6538094A (en) Method of inhibiting the transcription of genes
MY128779A (en) Alkenyl-containing isobutylene group block copolymer and process for producing it
AU2710099A (en) Vacuum strip coating installation
WO2002025696A3 (en) Reducing deposition of process residues on a surface in a chamber
HU9501777D0 (en) Method of treatment of chronic prostatitis with 17-beta-monosubstituted-carbamoly-4-aza-5-alpha-androst-1-en-3-ones