TW371784B - Method for fabricating semiconductor device - Google Patents

Method for fabricating semiconductor device

Info

Publication number
TW371784B
TW371784B TW083101369A TW83101369A TW371784B TW 371784 B TW371784 B TW 371784B TW 083101369 A TW083101369 A TW 083101369A TW 83101369 A TW83101369 A TW 83101369A TW 371784 B TW371784 B TW 371784B
Authority
TW
Taiwan
Prior art keywords
cobalt
platinum
nickel
iron
amorphous silicon
Prior art date
Application number
TW083101369A
Other languages
Chinese (zh)
Inventor
Shunpei Yamazaki
Yasuhiko Takemura
Hongyong Zhang
Toru Takayama
Hideki Uochi
Original Assignee
Semiconductor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5048531A external-priority patent/JPH06244103A/en
Priority claimed from JP5048535A external-priority patent/JP3041497B2/en
Application filed by Semiconductor Energy Lab Co Ltd filed Critical Semiconductor Energy Lab Co Ltd
Application granted granted Critical
Publication of TW371784B publication Critical patent/TW371784B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)

Abstract

A method for fabricating semiconductor device such as thin film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transistor point of the substrate so as to crystalline the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.
TW083101369A 1993-02-15 1994-02-18 Method for fabricating semiconductor device TW371784B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5048531A JPH06244103A (en) 1993-02-15 1993-02-15 Manufacture of semiconductor
JP4853393 1993-02-15
JP5048535A JP3041497B2 (en) 1993-02-15 1993-02-15 Semiconductor manufacturing method

Publications (1)

Publication Number Publication Date
TW371784B true TW371784B (en) 1999-10-11

Family

ID=27293320

Family Applications (3)

Application Number Title Priority Date Filing Date
TW087103916A TW484190B (en) 1993-02-15 1994-02-18 Semiconductor and semiconductor device
TW083101369A TW371784B (en) 1993-02-15 1994-02-18 Method for fabricating semiconductor device
TW089101225A TW509999B (en) 1993-02-15 1994-02-18 Semiconductor and a method of manufacturing a semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW087103916A TW484190B (en) 1993-02-15 1994-02-18 Semiconductor and semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW089101225A TW509999B (en) 1993-02-15 1994-02-18 Semiconductor and a method of manufacturing a semiconductor device

Country Status (6)

Country Link
US (5) US5639698A (en)
EP (2) EP1119053B1 (en)
KR (2) KR0171923B1 (en)
CN (1) CN1052110C (en)
DE (1) DE69428387T2 (en)
TW (3) TW484190B (en)

Families Citing this family (303)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6975296B1 (en) * 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
CN100465742C (en) 1992-08-27 2009-03-04 株式会社半导体能源研究所 Active matrix display
US5403762A (en) * 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
US6323071B1 (en) 1992-12-04 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
JP3165304B2 (en) * 1992-12-04 2001-05-14 株式会社半導体エネルギー研究所 Semiconductor device manufacturing method and semiconductor processing apparatus
US6997985B1 (en) * 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
JP3562588B2 (en) * 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
EP1119053B1 (en) * 1993-02-15 2011-11-02 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating TFT semiconductor device
US5985741A (en) 1993-02-15 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6413805B1 (en) 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
TW241377B (en) 1993-03-12 1995-02-21 Semiconductor Energy Res Co Ltd
US5501989A (en) * 1993-03-22 1996-03-26 Semiconductor Energy Laboratory Co., Ltd. Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer
US5818076A (en) * 1993-05-26 1998-10-06 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US6090646A (en) * 1993-05-26 2000-07-18 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
KR100186886B1 (en) * 1993-05-26 1999-04-15 야마자끼 승페이 Semiconductor device manufacturing method
KR100355938B1 (en) * 1993-05-26 2002-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device manufacturing method
US5488000A (en) 1993-06-22 1996-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
US6713330B1 (en) 1993-06-22 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
TW295703B (en) * 1993-06-25 1997-01-11 Handotai Energy Kenkyusho Kk
US6730549B1 (en) * 1993-06-25 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
US5663077A (en) 1993-07-27 1997-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
US5529937A (en) * 1993-07-27 1996-06-25 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating thin film transistor
JP2814049B2 (en) 1993-08-27 1998-10-22 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
TW264575B (en) * 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
CN1052566C (en) 1993-11-05 2000-05-17 株式会社半导体能源研究所 Method for manufacturing semiconductor device
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
US5869362A (en) * 1993-12-02 1999-02-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US6798023B1 (en) * 1993-12-02 2004-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film
JP2860869B2 (en) * 1993-12-02 1999-02-24 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
CN100472752C (en) 1993-12-02 2009-03-25 株式会社半导体能源研究所 Manufacturing method of semiconductor device
US6074901A (en) * 1993-12-03 2000-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for crystallizing an amorphous silicon film and apparatus for fabricating the same
KR100319332B1 (en) 1993-12-22 2002-04-22 야마자끼 순페이 Semiconductor device and electro-optical device
JP3221473B2 (en) 1994-02-03 2001-10-22 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US6884698B1 (en) * 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
JP3150840B2 (en) * 1994-03-11 2001-03-26 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US6700133B1 (en) 1994-03-11 2004-03-02 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
JP3540012B2 (en) * 1994-06-07 2004-07-07 株式会社半導体エネルギー研究所 Semiconductor device manufacturing method
TW273639B (en) * 1994-07-01 1996-04-01 Handotai Energy Kenkyusho Kk Method for producing semiconductor device
TW345705B (en) 1994-07-28 1998-11-21 Handotai Energy Kenkyusho Kk Laser processing method
JP3897826B2 (en) * 1994-08-19 2007-03-28 株式会社半導体エネルギー研究所 Active matrix display device
JPH0869967A (en) 1994-08-26 1996-03-12 Semiconductor Energy Lab Co Ltd Method for manufacturing semiconductor device
JP3464285B2 (en) * 1994-08-26 2003-11-05 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TW403993B (en) * 1994-08-29 2000-09-01 Semiconductor Energy Lab Semiconductor circuit for electro-optical device and method of manufacturing the same
JPH0878693A (en) * 1994-08-31 1996-03-22 Semiconductor Energy Lab Co Ltd Method for manufacturing semiconductor device
US6706572B1 (en) 1994-08-31 2004-03-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film transistor using a high pressure oxidation step
JP3359794B2 (en) * 1994-08-31 2002-12-24 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP3442500B2 (en) 1994-08-31 2003-09-02 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor circuit
TW374247B (en) * 1994-09-15 1999-11-11 Semiconductor Energy Lab Co Ltd Method of fabricating semiconductor device
US5712191A (en) * 1994-09-16 1998-01-27 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6242289B1 (en) * 1995-09-08 2001-06-05 Semiconductor Energy Laboratories Co., Ltd. Method for producing semiconductor device
US5915174A (en) * 1994-09-30 1999-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
US6300659B1 (en) 1994-09-30 2001-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and fabrication method for same
JP3277082B2 (en) * 1994-11-22 2002-04-22 シャープ株式会社 Semiconductor device and manufacturing method thereof
JP3418647B2 (en) * 1994-12-09 2003-06-23 株式会社半導体エネルギー研究所 Semiconductor device manufacturing method and crystal growth promoter
US6337229B1 (en) 1994-12-16 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method of making crystal silicon semiconductor and thin film transistor
TW303526B (en) * 1994-12-27 1997-04-21 Matsushita Electric Industrial Co Ltd
JP4130237B2 (en) * 1995-01-28 2008-08-06 株式会社半導体エネルギー研究所 Method for manufacturing crystalline silicon film and method for manufacturing semiconductor device
TW305063B (en) * 1995-02-02 1997-05-11 Handotai Energy Kenkyusho Kk
US6011607A (en) * 1995-02-15 2000-01-04 Semiconductor Energy Laboratory Co., Active matrix display with sealing material
JP3364081B2 (en) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP3778456B2 (en) 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 Method for manufacturing insulated gate thin film semiconductor device
JP3138169B2 (en) * 1995-03-13 2001-02-26 シャープ株式会社 Method for manufacturing semiconductor device
US5834327A (en) 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
TW448584B (en) * 1995-03-27 2001-08-01 Semiconductor Energy Lab Semiconductor device and a method of manufacturing the same
US7075002B1 (en) 1995-03-27 2006-07-11 Semiconductor Energy Laboratory Company, Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
KR100265179B1 (en) * 1995-03-27 2000-09-15 야마자끼 순페이 Semiconductor device and manufacturing method
JP3216861B2 (en) * 1995-04-10 2001-10-09 シャープ株式会社 Method for forming polycrystalline silicon film and method for manufacturing thin film transistor
US6933182B1 (en) * 1995-04-20 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device and manufacturing system thereof
TW463378B (en) 1995-06-01 2001-11-11 Semiconductor Energy Lab Method of manufacturing semiconductor device
US6337109B1 (en) * 1995-06-07 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method of producing crystalline semiconductor
US6790714B2 (en) 1995-07-03 2004-09-14 Sanyo Electric Co., Ltd. Semiconductor device, display device and method of fabricating the same
US5771110A (en) * 1995-07-03 1998-06-23 Sanyo Electric Co., Ltd. Thin film transistor device, display device and method of fabricating the same
JP4056571B2 (en) 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP3295679B2 (en) * 1995-08-04 2002-06-24 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TW371796B (en) * 1995-09-08 1999-10-11 Semiconductor Energy Lab Co Ltd Method and apparatus for manufacturing a semiconductor device
JP3235817B2 (en) * 1995-09-21 2001-12-04 シャープ株式会社 Semiconductor circuit, semiconductor device, and manufacturing method thereof
JPH09146108A (en) * 1995-11-17 1997-06-06 Semiconductor Energy Lab Co Ltd Liquid crystal display device and its driving method
JP3917205B2 (en) 1995-11-30 2007-05-23 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP3907726B2 (en) 1995-12-09 2007-04-18 株式会社半導体エネルギー研究所 Method for manufacturing microcrystalline silicon film, method for manufacturing semiconductor device, and method for manufacturing photoelectric conversion device
JP3124480B2 (en) * 1995-12-12 2001-01-15 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TW319912B (en) * 1995-12-15 1997-11-11 Handotai Energy Kenkyusho Kk
US6204101B1 (en) 1995-12-15 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JPH09171192A (en) 1995-12-19 1997-06-30 Semiconductor Energy Lab Co Ltd Active matrix liquid crystal display device and manufacturing method thereof
JP3477301B2 (en) 1995-12-19 2003-12-10 株式会社半導体エネルギー研究所 Active matrix type liquid crystal display device and manufacturing method thereof
JP3737176B2 (en) 1995-12-21 2006-01-18 株式会社半導体エネルギー研究所 Liquid crystal display
US5985740A (en) 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
JP3729955B2 (en) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP3645378B2 (en) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP3645379B2 (en) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3645380B2 (en) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device, information terminal, head mounted display, navigation system, mobile phone, video camera, projection display device
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6331457B1 (en) * 1997-01-24 2001-12-18 Semiconductor Energy Laboratory., Ltd. Co. Method for manufacturing a semiconductor thin film
US6449024B1 (en) 1996-01-26 2002-09-10 Semiconductor Energy Laboratory Co., Inc. Liquid crystal electro-optical device utilizing a polymer with an anisotropic refractive index
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6180439B1 (en) * 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US6465287B1 (en) 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
US6055028A (en) * 1996-02-14 2000-04-25 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal electro-optical device
US6697129B1 (en) * 1996-02-14 2004-02-24 Semiconductor Energy Laboratory Co., Ltd. Guest-host mode liquid crystal display device of lateral electric field driving type
US6063654A (en) * 1996-02-20 2000-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor involving laser treatment
TW374196B (en) 1996-02-23 1999-11-11 Semiconductor Energy Lab Co Ltd Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same
TW317643B (en) 1996-02-23 1997-10-11 Handotai Energy Kenkyusho Kk
TW335503B (en) * 1996-02-23 1998-07-01 Semiconductor Energy Lab Kk Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method
JP3472024B2 (en) 1996-02-26 2003-12-02 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP3708620B2 (en) * 1996-03-01 2005-10-19 株式会社半導体エネルギー研究所 Active matrix liquid crystal electro-optical device
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6133119A (en) * 1996-07-08 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method manufacturing same
TW556263B (en) 1996-07-11 2003-10-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US8603870B2 (en) 1996-07-11 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US5773329A (en) * 1996-07-24 1998-06-30 International Business Machines Corporation Polysilicon grown by pulsed rapid thermal annealing
KR100500033B1 (en) 1996-10-15 2005-09-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 A semiconductor device
TW451284B (en) 1996-10-15 2001-08-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3683660B2 (en) 1996-10-16 2005-08-17 株式会社半導体エネルギー研究所 Projection type color image display device and driving method thereof
JP3788649B2 (en) * 1996-11-22 2006-06-21 株式会社半導体エネルギー研究所 Liquid crystal display
JPH10228248A (en) * 1996-12-09 1998-08-25 Semiconductor Energy Lab Co Ltd Active matrix display device and manufacturing method thereof
JP3917698B2 (en) * 1996-12-12 2007-05-23 株式会社半導体エネルギー研究所 Laser annealing method and laser annealing apparatus
JPH10199807A (en) 1996-12-27 1998-07-31 Semiconductor Energy Lab Co Ltd Method for manufacturing crystalline silicon film
JPH10198292A (en) 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method thereof
US6011275A (en) 1996-12-30 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6331722B1 (en) 1997-01-18 2001-12-18 Semiconductor Energy Laboratory Co., Ltd. Hybrid circuit and electronic device using same
US6355509B1 (en) 1997-01-28 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Removing a crystallization catalyst from a semiconductor film during semiconductor device fabrication
JPH10223532A (en) * 1997-02-10 1998-08-21 Semiconductor Energy Lab Co Ltd Method for manufacturing semiconductor and method for manufacturing semiconductor device
US6830616B1 (en) * 1997-02-10 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor and manufacturing method of semiconductor device
JP3973723B2 (en) * 1997-02-12 2007-09-12 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP3942683B2 (en) 1997-02-12 2007-07-11 株式会社半導体エネルギー研究所 Semiconductor device manufacturing method
JP3976828B2 (en) * 1997-02-17 2007-09-19 株式会社半導体エネルギー研究所 Method for producing crystalline silicon film
JP3765902B2 (en) 1997-02-19 2006-04-12 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device and manufacturing method of electronic device
JP4401448B2 (en) * 1997-02-24 2010-01-20 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP4242461B2 (en) 1997-02-24 2009-03-25 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP3844552B2 (en) * 1997-02-26 2006-11-15 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TW379360B (en) 1997-03-03 2000-01-11 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US5994164A (en) * 1997-03-18 1999-11-30 The Penn State Research Foundation Nanostructure tailoring of material properties using controlled crystallization
JP3544280B2 (en) 1997-03-27 2004-07-21 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JPH10282414A (en) * 1997-04-09 1998-10-23 Canon Inc Zoom lens
US6241817B1 (en) * 1997-05-24 2001-06-05 Jin Jang Method for crystallizing amorphous layer
JP3376247B2 (en) * 1997-05-30 2003-02-10 株式会社半導体エネルギー研究所 Thin film transistor and semiconductor device using thin film transistor
US6541793B2 (en) 1997-05-30 2003-04-01 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and semiconductor device using thin-film transistors
US6307214B1 (en) 1997-06-06 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
JP3844561B2 (en) 1997-06-10 2006-11-15 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US6501094B1 (en) * 1997-06-11 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a bottom gate type thin film transistor
JP3717634B2 (en) * 1997-06-17 2005-11-16 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US6066547A (en) * 1997-06-20 2000-05-23 Sharp Laboratories Of America, Inc. Thin-film transistor polycrystalline film formation by nickel induced, rapid thermal annealing method
JP3830623B2 (en) 1997-07-14 2006-10-04 株式会社半導体エネルギー研究所 Method for manufacturing crystalline semiconductor film
JP3295346B2 (en) 1997-07-14 2002-06-24 株式会社半導体エネルギー研究所 Method for producing crystalline silicon film and thin film transistor using the same
US5940693A (en) 1997-07-15 1999-08-17 Sharp Laboratories Of America, Inc. Selective silicide thin-film transistor and method for same
US6326226B1 (en) 1997-07-15 2001-12-04 Lg. Philips Lcd Co., Ltd. Method of crystallizing an amorphous film
JP3754184B2 (en) 1997-07-16 2006-03-08 株式会社半導体エネルギー研究所 Method for manufacturing flat panel display having thin film transistor
JP3939399B2 (en) 1997-07-22 2007-07-04 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP3974229B2 (en) * 1997-07-22 2007-09-12 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JPH1140498A (en) 1997-07-22 1999-02-12 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JP4318768B2 (en) 1997-07-23 2009-08-26 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP4180689B2 (en) 1997-07-24 2008-11-12 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US5950078A (en) * 1997-09-19 1999-09-07 Sharp Laboratories Of America, Inc. Rapid thermal annealing with absorptive layers for thin film transistors on transparent substrates
KR100269312B1 (en) * 1997-10-14 2000-10-16 윤종용 Method for crystallization of silicon film and fabricating method for thin film transistor-liquid crystal display using the same
US5937315A (en) * 1997-11-07 1999-08-10 Advanced Micro Devices, Inc. Self-aligned silicide gate technology for advanced submicron MOS devices
JPH11145056A (en) * 1997-11-07 1999-05-28 Sony Corp Semiconductor materials
JP3107024B2 (en) * 1997-12-09 2000-11-06 日本電気株式会社 Method for manufacturing thin film transistor
JPH11204434A (en) * 1998-01-12 1999-07-30 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method thereof
JP4376979B2 (en) 1998-01-12 2009-12-02 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP4236722B2 (en) * 1998-02-05 2009-03-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US6060392A (en) * 1998-02-11 2000-05-09 National Semiconductor Corporation Fabrication of silicides by excimer laser annealing of amorphous silicon
US6821710B1 (en) 1998-02-11 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US6444390B1 (en) 1998-02-18 2002-09-03 Semiconductor Energy Laboratory Co., Ltd. Process for producing semiconductor thin film devices using group 14 element and high temperature oxidizing treatment to achieve a crystalline silicon film
EP2280398A3 (en) * 1998-02-23 2011-03-09 Kabushiki Kaisha Toshiba Information storage medium, information playback method and apparatus and information recording method
JP3980159B2 (en) * 1998-03-05 2007-09-26 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US6657225B1 (en) * 1998-03-25 2003-12-02 Seiko Epson Corporation Semiconductor component, active matrix substrate for a liquid crystal display, and methods of manufacturing such component and substrate
US6482684B1 (en) * 1998-03-27 2002-11-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a TFT with Ge seeded amorphous Si layer
US6312979B1 (en) 1998-04-28 2001-11-06 Lg.Philips Lcd Co., Ltd. Method of crystallizing an amorphous silicon layer
JP2000039628A (en) 1998-05-16 2000-02-08 Semiconductor Energy Lab Co Ltd Semiconductor display device
US6228693B1 (en) * 1998-06-05 2001-05-08 Sharp Laboratories Of America, Inc. Selected site, metal-induced, continuous crystallization method
US6015752A (en) * 1998-06-30 2000-01-18 Advanced Micro Devices, Inc. Elevated salicide technology
US6524662B2 (en) * 1998-07-10 2003-02-25 Jin Jang Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof
US7294535B1 (en) 1998-07-15 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7153729B1 (en) * 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US6346437B1 (en) * 1998-07-16 2002-02-12 Sharp Laboratories Of America, Inc. Single crystal TFT from continuous transition metal delivery method
JP3592535B2 (en) 1998-07-16 2004-11-24 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US7282398B2 (en) * 1998-07-17 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same
US7084016B1 (en) * 1998-07-17 2006-08-01 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
JP2000058839A (en) 1998-08-05 2000-02-25 Semiconductor Energy Lab Co Ltd Semiconductor device including semiconductor circuit including semiconductor element and method for manufacturing the same
US6559036B1 (en) 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6294441B1 (en) 1998-08-18 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6271131B1 (en) 1998-08-26 2001-08-07 Micron Technology, Inc. Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers
US6204172B1 (en) 1998-09-03 2001-03-20 Micron Technology, Inc. Low temperature deposition of barrier layers
US6784034B1 (en) 1998-10-13 2004-08-31 Lg. Philips Lcd Co., Ltd. Method for fabricating a thin film transistor
US6323081B1 (en) 1998-09-03 2001-11-27 Micron Technology, Inc. Diffusion barrier layers and methods of forming same
US6284655B1 (en) 1998-09-03 2001-09-04 Micron Technology, Inc. Method for producing low carbon/oxygen conductive layers
US6239028B1 (en) * 1998-09-03 2001-05-29 Micron Technology, Inc. Methods for forming iridium-containing films on substrates
US6392810B1 (en) 1998-10-05 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, beam homogenizer, semiconductor device, and method of manufacturing the semiconductor device
JP2000174282A (en) * 1998-12-03 2000-06-23 Semiconductor Energy Lab Co Ltd Semiconductor device
US6287698B1 (en) 1998-12-08 2001-09-11 H. B. Fuller Licensing & Financing, Inc. Process for improving hydrolysis resistance of polyurethane dispersion adhesives and bonded assemblies produced therefrom
US6380007B1 (en) 1998-12-28 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP3331999B2 (en) * 1999-02-09 2002-10-07 日本電気株式会社 Manufacturing method of semiconductor thin film
JP2001007342A (en) * 1999-04-20 2001-01-12 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method thereof
US6329286B1 (en) 1999-04-27 2001-12-11 Micron Technology, Inc. Methods for forming conformal iridium layers on substrates
US6878968B1 (en) 1999-05-10 2005-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6680487B1 (en) * 1999-05-14 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same
JP4298131B2 (en) 1999-05-14 2009-07-15 株式会社半導体エネルギー研究所 Method for manufacturing liquid crystal display device
KR100317641B1 (en) 1999-05-21 2001-12-22 구본준, 론 위라하디락사 Thin film transistor and the method of fabricating the same
KR100317639B1 (en) * 1999-05-21 2001-12-22 구본준, 론 위라하디락사 Thin film transistor, liquid crystal display device and the method of fabricating the same
TW459275B (en) * 1999-07-06 2001-10-11 Semiconductor Energy Lab Semiconductor device and method of fabricating the same
JP3432187B2 (en) * 1999-09-22 2003-08-04 シャープ株式会社 Method for manufacturing semiconductor device
WO2001026143A1 (en) * 1999-10-04 2001-04-12 Matsushita Eletric Industrial Co., Ltd. Method of manufacturing semiconductor device
JP3579316B2 (en) * 1999-10-19 2004-10-20 三洋電機株式会社 Method for manufacturing semiconductor device
US7232742B1 (en) 1999-11-26 2007-06-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes forming a material with a high tensile stress in contact with a semiconductor film to getter impurities from the semiconductor film
TW473800B (en) * 1999-12-28 2002-01-21 Semiconductor Energy Lab Method of manufacturing a semiconductor device
KR100660814B1 (en) * 1999-12-31 2006-12-26 엘지.필립스 엘시디 주식회사 Semiconductor layer formation method of thin film transistor
GB2358084B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Semiconductor transistor
US7071041B2 (en) * 2000-01-20 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
TW503439B (en) * 2000-01-21 2002-09-21 United Microelectronics Corp Combination structure of passive element and logic circuit on silicon on insulator wafer
US7098084B2 (en) * 2000-03-08 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6916693B2 (en) * 2000-03-08 2005-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6913986B2 (en) * 2000-04-04 2005-07-05 Matsushita Electric Industrial Co., Ltd. Method and apparatus for fabricating a thin film and thin film transistor and method of fabricating same
US6291255B1 (en) * 2000-05-22 2001-09-18 Industrial Technology Research Institute TFT process with high transmittance
JP2001345451A (en) * 2000-05-30 2001-12-14 Hitachi Ltd Thin film semiconductor integrated circuit device, image display device using the same, and method of manufacturing the same
US6683333B2 (en) 2000-07-14 2004-01-27 E Ink Corporation Fabrication of electronic circuit elements using unpatterned semiconductor layers
US6660631B1 (en) 2000-08-31 2003-12-09 Micron Technology, Inc. Devices containing platinum-iridium films and methods of preparing such films and devices
US6599818B2 (en) * 2000-10-10 2003-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method
JP2002176000A (en) * 2000-12-05 2002-06-21 Semiconductor Energy Lab Co Ltd Heat treatment apparatus and method of manufacturing semiconductor device
US7045444B2 (en) 2000-12-19 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device that includes selectively adding a noble gas element
US7534977B2 (en) * 2000-12-28 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Heat treatment apparatus and method of manufacturing a semiconductor device
KR100715908B1 (en) * 2000-12-29 2007-05-08 엘지.필립스 엘시디 주식회사 Thin Film Transistor and Manufacturing Method Thereof
KR20020057382A (en) * 2001-01-04 2002-07-11 주승기 Method and apparatus for fabricating a semiconductor device
US6858480B2 (en) 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI221645B (en) * 2001-01-19 2004-10-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP3940560B2 (en) * 2001-01-25 2007-07-04 独立行政法人産業技術総合研究所 Manufacturing method of semiconductor device
US7115453B2 (en) * 2001-01-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US6770518B2 (en) * 2001-01-29 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP2002231627A (en) * 2001-01-30 2002-08-16 Semiconductor Energy Lab Co Ltd Method for manufacturing photoelectric conversion device
US7141822B2 (en) * 2001-02-09 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP4993810B2 (en) 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP5088993B2 (en) 2001-02-16 2012-12-05 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
SG114529A1 (en) * 2001-02-23 2005-09-28 Semiconductor Energy Lab Method of manufacturing a semiconductor device
SG114530A1 (en) * 2001-02-28 2005-09-28 Semiconductor Energy Lab Method of manufacturing a semiconductor device
SG118117A1 (en) 2001-02-28 2006-01-27 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US6830994B2 (en) * 2001-03-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a crystallized semiconductor film
JP2002270507A (en) * 2001-03-14 2002-09-20 Hitachi Cable Ltd Method for forming crystalline silicon layer and crystalline silicon semiconductor device
JP4718700B2 (en) 2001-03-16 2011-07-06 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US7052943B2 (en) 2001-03-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6812081B2 (en) * 2001-03-26 2004-11-02 Semiconductor Energy Laboratory Co.,.Ltd. Method of manufacturing semiconductor device
US6855584B2 (en) * 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP2001332496A (en) * 2001-03-30 2001-11-30 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
JP2001338877A (en) * 2001-03-30 2001-12-07 Semiconductor Energy Lab Co Ltd Manufacturing method of semiconductor device
US7253032B2 (en) 2001-04-20 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Method of flattening a crystallized semiconductor film surface by using a plate
JP4854866B2 (en) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US7067416B2 (en) * 2001-08-29 2006-06-27 Micron Technology, Inc. Method of forming a conductive contact
JP4108308B2 (en) * 2001-09-18 2008-06-25 本田技研工業株式会社 How to cancel your PIN code
TWI291729B (en) 2001-11-22 2007-12-21 Semiconductor Energy Lab A semiconductor fabricating apparatus
JP2003163221A (en) * 2001-11-28 2003-06-06 Semiconductor Energy Lab Co Ltd Method for manufacturing semiconductor device
KR100967824B1 (en) * 2001-11-30 2010-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Manufacturing method of semiconductor device
US7133737B2 (en) * 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
US7214573B2 (en) * 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
JP3992976B2 (en) 2001-12-21 2007-10-17 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP4030758B2 (en) 2001-12-28 2008-01-09 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US6727122B2 (en) * 2001-12-29 2004-04-27 Lg. Philips Lcd Co., Ltd. Method of fabricating polysilicon thin film transistor
US7524688B2 (en) * 2002-05-22 2009-04-28 Tpo Hong Kong Holding Limited Active matrix display devices and the manufacture thereof
US6908797B2 (en) * 2002-07-09 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP3949027B2 (en) * 2002-08-06 2007-07-25 富士通株式会社 Analog switch circuit
US6861338B2 (en) * 2002-08-22 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
KR100930362B1 (en) 2002-11-04 2009-12-08 엘지디스플레이 주식회사 Polycrystalline Silicon Film Formation Method And Manufacturing Method Of Thin Film Transistor Including The Same
JP4115252B2 (en) * 2002-11-08 2008-07-09 シャープ株式会社 Semiconductor film and manufacturing method thereof, and semiconductor device and manufacturing method thereof
US7232715B2 (en) * 2002-11-15 2007-06-19 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating semiconductor film and semiconductor device and laser processing apparatus
US7374976B2 (en) * 2002-11-22 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin film transistor
JP4097521B2 (en) * 2002-12-27 2008-06-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US6929564B2 (en) * 2003-01-08 2005-08-16 Taylor Made Golf Company, Inc. Golf club head
JP4059095B2 (en) * 2003-02-07 2008-03-12 セイコーエプソン株式会社 Complementary thin film transistor circuit, electro-optical device, electronic equipment
TWI254456B (en) * 2003-06-12 2006-05-01 Ind Tech Res Inst A thermal plate crystallization method
US7282738B2 (en) * 2003-07-18 2007-10-16 Corning Incorporated Fabrication of crystalline materials over substrates
US7071022B2 (en) 2003-07-18 2006-07-04 Corning Incorporated Silicon crystallization using self-assembled monolayers
US6939754B2 (en) * 2003-08-13 2005-09-06 Sharp Laboratories Of America, Inc. Isotropic polycrystalline silicon and method for producing same
US7964925B2 (en) * 2006-10-13 2011-06-21 Hewlett-Packard Development Company, L.P. Photodiode module and apparatus including multiple photodiode modules
KR101132266B1 (en) * 2004-03-26 2012-04-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US7288480B2 (en) * 2004-04-23 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit and method for manufacturing the same, CPU, memory, electronic card and electronic device
WO2006022780A2 (en) * 2004-08-05 2006-03-02 California Institute Of Technology Method for fabricating crystalline silicon
US7683373B2 (en) * 2004-10-05 2010-03-23 Samsung Mobile Display Co., Ltd. Thin film transistor and method of fabricating the same
US7365410B2 (en) * 2004-10-29 2008-04-29 Freescale, Semiconductor, Inc. Semiconductor structure having a metallic buffer layer and method for forming
TWI382455B (en) * 2004-11-04 2013-01-11 Semiconductor Energy Lab Semiconductor device and method of manufacturing same
US7575959B2 (en) 2004-11-26 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US20060197088A1 (en) * 2005-03-07 2006-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US7863660B2 (en) * 2005-05-31 2011-01-04 Sharp Kabushiki Kaisha Photodiode and display device
JP4434080B2 (en) 2005-06-03 2010-03-17 トヨタ自動車株式会社 Insulated gate semiconductor device and manufacturing method thereof
KR100646937B1 (en) * 2005-08-22 2006-11-23 삼성에스디아이 주식회사 Polycrystalline Silicon Thin Film Transistor and Manufacturing Method Thereof
US20070117287A1 (en) * 2005-11-23 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
JP5352081B2 (en) * 2006-12-20 2013-11-27 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR100839735B1 (en) 2006-12-29 2008-06-19 삼성에스디아이 주식회사 Transistor, manufacturing method thereof and flat panel display device having same
US20080179762A1 (en) * 2007-01-25 2008-07-31 Au Optronics Corporation Layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer, and applications of the same
US7754600B2 (en) 2007-03-01 2010-07-13 Hewlett-Packard Development Company, L.P. Methods of forming nanostructures on metal-silicide crystallites, and resulting structures and devices
TWI464510B (en) * 2007-07-20 2014-12-11 Semiconductor Energy Lab Liquid crystal display device
KR101329352B1 (en) * 2007-10-17 2013-11-13 삼성전자주식회사 Method for manufacturing of semiconductor device
JP5436101B2 (en) * 2008-09-05 2014-03-05 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TWI455186B (en) * 2009-01-23 2014-10-01 Univ Nat Chiao Tung Fabrication of metal - induced crystals by ion implantation
TWI384534B (en) * 2009-01-23 2013-02-01 Univ Nat Chiao Tung A Method for Improving the Properties of Lateral Crystalline Layer by Using Metal to Improve Metal
KR101088457B1 (en) * 2009-04-07 2011-12-01 주식회사 테라세미콘 Manufacturing method of polysilicon mask using metal catalyst and manufacturing method of semiconductor device using same
FR2950477A1 (en) * 2009-09-18 2011-03-25 Commissariat Energie Atomique Thin polycrystalline silicon layer forming method for e.g. photovoltaic cell, involves depositing silicon layer on surface of substrate, and exposing substrate and silicon layer to heat treatment suitable to crystallization of silicon
KR101049802B1 (en) * 2009-11-20 2011-07-15 삼성모바일디스플레이주식회사 Method for manufacturing polycrystalline silicon layer, thin film transistor, organic light emitting display device having same and method for manufacturing thereof
US8232148B2 (en) * 2010-03-04 2012-07-31 International Business Machines Corporation Structure and method to make replacement metal gate and contact metal
EP2701182A3 (en) 2010-12-10 2014-06-04 Teijin Limited Semiconductor laminate, semiconductor device, method for producing semiconductor laminate, and method for manufacturing semiconductor device
DE102012213077A1 (en) * 2012-07-25 2014-01-30 Robert Bosch Gmbh Method for contacting a semiconductor material with a contact layer
US8946062B2 (en) * 2012-11-21 2015-02-03 Guardian Industries Corp. Polycrystalline silicon thick films for photovoltaic devices or the like, and methods of making same
KR102048941B1 (en) 2013-04-12 2020-01-09 삼성디스플레이 주식회사 Flexible substrate and manufacturing method thereof, organic light emitting diode display
CN103972050A (en) * 2014-05-14 2014-08-06 京东方科技集团股份有限公司 Preparation method of polycrystalline silicon thin film, polycrystalline silicon thin film transistor and array substrate
TWI593024B (en) * 2015-07-24 2017-07-21 友達光電股份有限公司 Method for manufacturing thin film transistor
CN111509061B (en) * 2020-03-20 2023-10-20 中国科学院宁波材料技术与工程研究所 Preparation method of p-type polycrystalline silicon film and its application in passivated contact solar cells

Family Cites Families (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US28385A (en) * 1860-05-22 Improvement in apparatus for clarifying cane-juice
US28386A (en) * 1860-05-22 Improvement in seed-planters
USRE28385E (en) 1968-03-20 1975-04-08 Method of treating semiconductor devices
US3556880A (en) 1968-04-11 1971-01-19 Rca Corp Method of treating semiconductor devices to improve lifetime
US3783049A (en) * 1971-03-31 1974-01-01 Trw Inc Method of platinum diffusion
US4231809A (en) * 1979-05-25 1980-11-04 Bell Telephone Laboratories, Incorporated Method of removing impurity metals from semiconductor devices
JPS5833822A (en) * 1981-08-21 1983-02-28 Mitsubishi Electric Corp Preparation of semiconductor substrate
JPS58130517A (en) * 1982-01-29 1983-08-04 Hitachi Ltd Manufacture of single crystal thin film
AT380974B (en) * 1982-04-06 1986-08-11 Shell Austria METHOD FOR SETTING SEMICONDUCTOR COMPONENTS
JPS58190020A (en) * 1982-04-30 1983-11-05 Seiko Epson Corp Epitaxial growth method
JPS5983993A (en) * 1982-11-02 1984-05-15 Nec Corp Growth of semiconductor layer of single crystal
JPS60202952A (en) * 1984-03-28 1985-10-14 Fujitsu Ltd Manufacture of semiconductor device
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
EP0178447B1 (en) * 1984-10-09 1993-02-17 Fujitsu Limited A manufacturing method of an integrated circuit based on semiconductor-on-insulator technology
JPH07105338B2 (en) * 1985-08-07 1995-11-13 日本電気株式会社 Method for manufacturing semiconductor device
US4810673A (en) * 1986-09-18 1989-03-07 Texas Instruments Incorporated Oxide deposition method
US4783379A (en) * 1987-04-17 1988-11-08 Tosoh Smd, Inc. Explosive crystallization in metal/silicon multilayer film
US5225355A (en) * 1988-02-26 1993-07-06 Fujitsu Limited Gettering treatment process
US5010037A (en) * 1988-10-14 1991-04-23 California Institute Of Technology Pinhole-free growth of epitaxial CoSi2 film on Si(111)
JPH02140915A (en) * 1988-11-22 1990-05-30 Seiko Epson Corp Manufacturing method of semiconductor device
US5075259A (en) * 1989-08-22 1991-12-24 Motorola, Inc. Method for forming semiconductor contacts by electroless plating
DE69125886T2 (en) * 1990-05-29 1997-11-20 Semiconductor Energy Lab Thin film transistors
JPH0462976A (en) * 1990-06-30 1992-02-27 Nippon Seiki Co Ltd Manufacture of acceleration sensor
GB9014723D0 (en) * 1990-07-03 1990-08-22 Marconi Gec Ltd Crystallisation process
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films
JP2650003B2 (en) * 1991-02-14 1997-09-03 信越化学工業株式会社 Method for producing silicon single crystal by chemical vapor deposition method and method for fractional determination of ultratrace elements in chlorosilanes as raw materials and ultratrace elements in produced silicon single crystal
JPH0824104B2 (en) * 1991-03-18 1996-03-06 株式会社半導体エネルギー研究所 Semiconductor material and manufacturing method thereof
JPH05182923A (en) * 1991-05-28 1993-07-23 Semiconductor Energy Lab Co Ltd Laser annealing method
GB9114018D0 (en) * 1991-06-28 1991-08-14 Philips Electronic Associated Thin-film transistor manufacture
JPH05109737A (en) * 1991-10-18 1993-04-30 Casio Comput Co Ltd Method of manufacturing thin film transistor
US5244819A (en) * 1991-10-22 1993-09-14 Honeywell Inc. Method to getter contamination in semiconductor devices
JP2865925B2 (en) * 1992-01-16 1999-03-08 太陽誘電株式会社 Method for producing dielectric porcelain composition
US5485019A (en) * 1992-02-05 1996-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JP3204735B2 (en) * 1992-06-01 2001-09-04 株式会社東芝 Manufacturing method of hydrogenated amorphous silicon thin film transistor
US5288662A (en) * 1992-06-15 1994-02-22 Air Products And Chemicals, Inc. Low ozone depleting organic chlorides for use during silicon oxidation and furnace tube cleaning
US5300187A (en) * 1992-09-03 1994-04-05 Motorola, Inc. Method of removing contaminants
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
US5604360A (en) * 1992-12-04 1997-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor
JP2534189B2 (en) * 1993-01-29 1996-09-11 株式会社フジクラ Switching branch board
US5843225A (en) * 1993-02-03 1998-12-01 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor and process for fabricating semiconductor device
JP3497198B2 (en) * 1993-02-03 2004-02-16 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device and thin film transistor
JPH06296023A (en) * 1993-02-10 1994-10-21 Semiconductor Energy Lab Co Ltd Thin-film semiconductor device and manufacture thereof
EP1119053B1 (en) * 1993-02-15 2011-11-02 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating TFT semiconductor device
US5275851A (en) * 1993-03-03 1994-01-04 The Penn State Research Foundation Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates
JP3193803B2 (en) * 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor element
TW241377B (en) * 1993-03-12 1995-02-21 Semiconductor Energy Res Co Ltd
US5569936A (en) * 1993-03-12 1996-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing crystallization catalyst
US5624851A (en) * 1993-03-12 1997-04-29 Semiconductor Energy Laboratory Co., Ltd. Process of fabricating a semiconductor device in which one portion of an amorphous silicon film is thermally crystallized and another portion is laser crystallized
CN1542929B (en) * 1993-03-12 2012-05-30 株式会社半导体能源研究所 Manufacturing method of semiconductor device
US5501989A (en) * 1993-03-22 1996-03-26 Semiconductor Energy Laboratory Co., Ltd. Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer
JP2847031B2 (en) * 1993-05-03 1999-01-13 現代電子産業株式会社 Semiconductor element wiring manufacturing method
US5481121A (en) * 1993-05-26 1996-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having improved crystal orientation
US5488000A (en) * 1993-06-22 1996-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
US5663077A (en) * 1993-07-27 1997-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
US5529937A (en) * 1993-07-27 1996-06-25 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating thin film transistor
US5492843A (en) * 1993-07-31 1996-02-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device and method of processing substrate
JP2975973B2 (en) * 1993-08-10 1999-11-10 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JP2762215B2 (en) * 1993-08-12 1998-06-04 株式会社半導体エネルギー研究所 Method for manufacturing thin film transistor and semiconductor device
JP2814049B2 (en) * 1993-08-27 1998-10-22 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JPH07335904A (en) * 1994-06-14 1995-12-22 Semiconductor Energy Lab Co Ltd Thin film semiconductor integrated circuit
TW264575B (en) * 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
US5612250A (en) * 1993-12-01 1997-03-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a catalyst
JP3562590B2 (en) * 1993-12-01 2004-09-08 株式会社半導体エネルギー研究所 Semiconductor device manufacturing method
JP2860869B2 (en) * 1993-12-02 1999-02-24 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
US5654203A (en) * 1993-12-02 1997-08-05 Semiconductor Energy Laboratory, Co., Ltd. Method for manufacturing a thin film transistor using catalyst elements to promote crystallization
KR100319332B1 (en) * 1993-12-22 2002-04-22 야마자끼 순페이 Semiconductor device and electro-optical device
JP3378078B2 (en) * 1994-02-23 2003-02-17 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JPH07335906A (en) * 1994-06-14 1995-12-22 Semiconductor Energy Lab Co Ltd Thin film semiconductor device and manufacturing method thereof
JP3072000B2 (en) * 1994-06-23 2000-07-31 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US5426061A (en) * 1994-09-06 1995-06-20 Midwest Research Institute Impurity gettering in semiconductors
US5712191A (en) * 1994-09-16 1998-01-27 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
JP3942651B2 (en) * 1994-10-07 2007-07-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP3486240B2 (en) * 1994-10-20 2004-01-13 株式会社半導体エネルギー研究所 Semiconductor device
US5756364A (en) * 1994-11-29 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Laser processing method of semiconductor device using a catalyst
TW448584B (en) * 1995-03-27 2001-08-01 Semiconductor Energy Lab Semiconductor device and a method of manufacturing the same
JP4318768B2 (en) * 1997-07-23 2009-08-26 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device

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US5897347A (en) 1999-04-27
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US5608232A (en) 1997-03-04
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DE69428387T2 (en) 2002-07-04
KR0171923B1 (en) 1999-02-01
EP1119053B1 (en) 2011-11-02
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EP1119053A3 (en) 2002-01-09
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CN1098554A (en) 1995-02-08

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