TW373341B - Separate absorption and multiplication avalanche photodiode - Google Patents
Separate absorption and multiplication avalanche photodiodeInfo
- Publication number
- TW373341B TW373341B TW084110176A TW84110176A TW373341B TW 373341 B TW373341 B TW 373341B TW 084110176 A TW084110176 A TW 084110176A TW 84110176 A TW84110176 A TW 84110176A TW 373341 B TW373341 B TW 373341B
- Authority
- TW
- Taiwan
- Prior art keywords
- avalanche
- layer
- avalanche photodiode
- absorption
- multiplication
- Prior art date
Links
- 238000010521 absorption reaction Methods 0.000 title abstract 5
- 239000000463 material Substances 0.000 abstract 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 2
- 229910006990 Si1-xGex Inorganic materials 0.000 abstract 1
- 229910007020 Si1−xGex Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
An amorphous silicon based hole-injection type SAMAPD (separate absorption and multiplication avalanche photodiode) has been invented. The device was made by separating the absorption layer and avalanche layer from the conventional APD (avalanche photodiode). This will make most voltage bias to be acrossed on avalanche layer (high energy bandgap material) and enlarge the avalanche multiplication effect, i.e., increasing the optical gain. In addition, the voltage bias acrossed on absorption layer will be small and this will limit the dark current. Using I-a-Si: H as avalanche layer material and a-Si1-xGex: H as absorption layer material, the hole-injection type SAMAPD yields a very high optical gain of 686 at a reverse bias of 16V under an incident light power of Pin=1 μw. The conventional compound material APD always have the problems about high temperature process or complicated preparation process, thus raising the cost of the device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW084110176A TW373341B (en) | 1995-09-29 | 1995-09-29 | Separate absorption and multiplication avalanche photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW084110176A TW373341B (en) | 1995-09-29 | 1995-09-29 | Separate absorption and multiplication avalanche photodiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW373341B true TW373341B (en) | 1999-11-01 |
Family
ID=57941736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084110176A TW373341B (en) | 1995-09-29 | 1995-09-29 | Separate absorption and multiplication avalanche photodiode |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW373341B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI664718B (en) * | 2018-05-04 | 2019-07-01 | National Central University | Boss-Shaped Avalanche Photodetector |
-
1995
- 1995-09-29 TW TW084110176A patent/TW373341B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI664718B (en) * | 2018-05-04 | 2019-07-01 | National Central University | Boss-Shaped Avalanche Photodetector |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |