TW374050B - Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing - Google Patents

Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing

Info

Publication number
TW374050B
TW374050B TW087112772A TW87112772A TW374050B TW 374050 B TW374050 B TW 374050B TW 087112772 A TW087112772 A TW 087112772A TW 87112772 A TW87112772 A TW 87112772A TW 374050 B TW374050 B TW 374050B
Authority
TW
Taiwan
Prior art keywords
trace
chemical mechanical
mechanical polishing
isrm
predicted
Prior art date
Application number
TW087112772A
Other languages
English (en)
Chinese (zh)
Inventor
Andreas Wiswesser
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW374050B publication Critical patent/TW374050B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW087112772A 1997-10-31 1998-08-03 Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing TW374050B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US96208597A 1997-10-31 1997-10-31

Publications (1)

Publication Number Publication Date
TW374050B true TW374050B (en) 1999-11-11

Family

ID=25505399

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087112772A TW374050B (en) 1997-10-31 1998-08-03 Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing

Country Status (4)

Country Link
EP (1) EP1027576A1 (de)
JP (1) JP2001522139A (de)
TW (1) TW374050B (de)
WO (1) WO1999023449A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI574787B (zh) * 2011-04-28 2017-03-21 應用材料股份有限公司 改變用於研磨控制的係數與函數

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6628397B1 (en) 1999-09-15 2003-09-30 Kla-Tencor Apparatus and methods for performing self-clearing optical measurements
US6671051B1 (en) 1999-09-15 2003-12-30 Kla-Tencor Apparatus and methods for detecting killer particles during chemical mechanical polishing
EP1244907A1 (de) * 1999-12-23 2002-10-02 KLA-Tencor Corporation Vor-ort-überwachung für metallisationsprozesse unter verwendung von wirbelstrommessungen und optischen messungen
IL134626A (en) * 2000-02-20 2006-08-01 Nova Measuring Instr Ltd Test structure for metal cmp process control
US6919957B2 (en) 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
US6633831B2 (en) 2000-09-20 2003-10-14 Kla Tencor Technologies Methods and systems for determining a critical dimension and a thin film characteristic of a specimen
US7106425B1 (en) 2000-09-20 2006-09-12 Kla-Tencor Technologies Corp. Methods and systems for determining a presence of defects and a thin film characteristic of a specimen
US7130029B2 (en) 2000-09-20 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for determining an adhesion characteristic and a thickness of a specimen
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US7349090B2 (en) 2000-09-20 2008-03-25 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography
US20020072296A1 (en) 2000-11-29 2002-06-13 Muilenburg Michael J. Abrasive article having a window system for polishing wafers, and methods
US6514775B2 (en) 2001-06-29 2003-02-04 Kla-Tencor Technologies Corporation In-situ end point detection for semiconductor wafer polishing
US6801322B2 (en) 2001-12-13 2004-10-05 Freescale Semiconductor, Inc. Method and apparatus for IN SITU measuring a required feature of a layer during a polishing process
US6935922B2 (en) 2002-02-04 2005-08-30 Kla-Tencor Technologies Corp. Methods and systems for generating a two-dimensional map of a characteristic at relative or absolute locations of measurement spots on a specimen during polishing
US7160173B2 (en) 2002-04-03 2007-01-09 3M Innovative Properties Company Abrasive articles and methods for the manufacture and use of same
US6709312B2 (en) 2002-06-26 2004-03-23 Motorola, Inc. Method and apparatus for monitoring a polishing condition of a surface of a wafer in a polishing process
US7089081B2 (en) 2003-01-31 2006-08-08 3M Innovative Properties Company Modeling an abrasive process to achieve controlled material removal
JP2005203729A (ja) * 2003-12-19 2005-07-28 Ebara Corp 基板研磨装置
CN100372093C (zh) * 2004-12-10 2008-02-27 上海宏力半导体制造有限公司 研磨去除率的实时测量方法
US7306507B2 (en) * 2005-08-22 2007-12-11 Applied Materials, Inc. Polishing pad assembly with glass or crystalline window
US20090275265A1 (en) * 2008-05-02 2009-11-05 Applied Materials, Inc. Endpoint detection in chemical mechanical polishing using multiple spectra
US9551567B2 (en) * 2013-10-25 2017-01-24 Applied Materials, Inc. Reducing noise in spectral data from polishing substrates
JP7046358B2 (ja) * 2018-04-17 2022-04-04 スピードファム株式会社 研磨装置
CN108627107B (zh) * 2018-05-08 2019-09-27 中煤科工集团重庆研究院有限公司 管道内沉积粉尘厚度监测装置及方法
KR102708233B1 (ko) * 2019-02-15 2024-09-23 주식회사 케이씨텍 기판 연마 시스템
CN115284162B (zh) * 2022-07-19 2024-03-19 华虹半导体(无锡)有限公司 介质层的物理性能、半导体芯片性能的监测方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5290396A (en) * 1991-06-06 1994-03-01 Lsi Logic Corporation Trench planarization techniques
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
DE69635816T2 (de) * 1995-03-28 2006-10-12 Applied Materials, Inc., Santa Clara Verfahren zum Herstellen einer Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen
US5835221A (en) * 1995-10-16 1998-11-10 Lucent Technologies Inc. Process for fabricating a device using polarized light to determine film thickness

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI574787B (zh) * 2011-04-28 2017-03-21 應用材料股份有限公司 改變用於研磨控制的係數與函數

Also Published As

Publication number Publication date
WO1999023449A1 (en) 1999-05-14
JP2001522139A (ja) 2001-11-13
EP1027576A1 (de) 2000-08-16

Similar Documents

Publication Publication Date Title
TW374050B (en) Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing
AU4366900A (en) Apparatus for measuring relative hydration of a substrate
US6334807B1 (en) Chemical mechanical polishing in-situ end point system
US4208240A (en) Method and apparatus for controlling plasma etching
US6618130B2 (en) Method and apparatus for optical endpoint detection during chemical mechanical polishing
EP0881484A3 (de) Verfahren und Vorrichtung zur "In-Situ" Überwachtung der Dicke während chemisch-mechanischen Polierens
ATE222523T1 (de) Verfahren und vorrichtung zum überwachen der dicke mit einem mehrwellenlängen-spektrometer in einem chemisch-mechanischen polierverfahren
AU2003292386A1 (en) Workpiece inspection method
TW200507143A (en) Method and system for monitoring an etch process
WO2002087825A8 (en) Integrated endpoint detection system with optical and eddy current monitoring
CA2520559A1 (en) A method and apparatus for inspecting a tubular
WO2003005430A3 (en) Method and apparatus for controlling a plating process
GB2381662A (en) Method and apparatus for modeling thickness profiles and controlling subsequent etch process
EP1014437A3 (de) In-situ Messmethode und Halbleiterherstellungsapparat
EP1528355A3 (de) Dynamischer Vergleich von Artefakten
EP1571414A3 (de) Vorrichtung und Verfahren zum Oberflächenkonturmessen
WO2000026609A3 (en) Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing
WO1998005066A2 (en) Methods and apparatus for the in-process detection and measurement of thin film layers
EP0204926A3 (de) Verfahren und Vorrichtung zum Arbeitsfähigkeitsnachweis einer Probe
EP0859406A3 (de) Permanent montierte Referenzprobe für ein Substrat-Messgerät
WO2002097878A3 (en) Method and apparatus for determining process layer conformality
WO2001018734A8 (en) Calibration process for shape measurement
FR2703461B1 (fr) Procédés et appareils de mesure, d'uniformisation, de réglage, de nettoyage, de fabrication et de polissage.
TW355825B (en) Method and apparatus for measuring etch uniformity of a semiconductor wafer
WO2002018100A3 (en) Method and apparatus for measuring a polishing condition