TW406446B - Thermopile infrared sensor and manufacture method thereof - Google Patents

Abstract

A kind of thermopile infrared sensor comprising a plurality of thermocouple pairs. Each pair of the thermocouple is formed by jointing the straight-strip shape polysilicon conductor and the bent metal conductor. Using the method of bent metal conductor, it could lower efficiently the heat conduction characteristics of the whole structure and increase the degree of sensitivity of the device. Besides, this invention also provides the manufacture method of the above-mentioned thermopile infrared sensor, wherein, the formation of the thermal insulation structure supporting the thermocouple pairs utilizes the high-density plasma active ion etching technique to selectively remove the silicon substrate material and leave the thin-film structure as the support. Meanwhile, the chip cutting between each device also utilizes the same dry-method anisotropic etching technique to complete the chip separation, which is used to replace the traditional diamond-knife cutting method to increase the production yield.

Description

406446 V. Description of the invention (1) [Background of the invention] Field of the invention The present invention relates to a thermopile infrared sensor and a manufacturing method thereof. Description of conventional technology In recent years, thermocouples are widely used for temperature measurement. Its principle is to generate a diffusion current by heating one end of the junction of two conductors and causing a temperature difference between the other end of the two conductors. The back electromotive force can be balanced by eliminating this current, and this thermoelectromotive force is the Seedback voltage. By measuring the Seebeck voltage, you can know the temperature difference across the thermocouple and correct the temperature. The size of the Seebeck voltage is determined by the product of the temperature difference between the two ends and the Seebeck coefficient of the two conductors. Beck voltage value multiplied by the number of thermocouples in series. The structure of a conventional thermopile infrared sensor will be described below. FIG. 1A shows a top view of a conventional thermopile sensor. Fig. 1B is a sectional view taken along line L-L of Fig. 1A, and Fig. 1C is a wiring diagram of Fig. 1A. 1A and 1B, this thermopile sensor includes: a silicon substrate 1; a first dielectric layer 2 and an insulating film 2 ', which are respectively located on the front and back of the silicon substrate 1; a plurality of polycrystalline silicon conductors 3, On the first dielectric layer 2; a second dielectric layer 4 on the first dielectric layer 2 and the polycrystalline silicon conductor 3 for covering the polycrystalline silicon conductor 3; a plurality of metal conductors 5 on the second dielectric layer 4; a third dielectric layer 6 is located on the second dielectric layer 4 and the metal conductor 5 to cover the metal conductor 5; a black body layer 7 is located in the central region of the third dielectric layer 6 and To

Page 4 _406446_ V. Description of the invention (2) Absorption of heat; and a depression 8. 1A and 1B, in the structure of this thermopile sensor, according to the degree of thermal conduction, it can be divided into a thermal insulation region 9 located above the depression 8 and a heat sink region 1 located outside the thermal insulation region 9 0. Among them, the heat absorbed by the black body layer 7 cannot be dissipated in the thermal insulation region 9, and solid heat conduction can be performed only in a direction toward the heat sink region 10. 1B and 1C, each pair of polycrystalline silicon conductor 3 and metal conductor 5 are in contact with a hot end at a thermal insulation region 9 to form a thermocouple 11, and a plurality of thermocouples 11 are connected to a heat sink in series. The cold end (not shown) of the body region 10. In order to improve the yield of thermopile sensors, usually each hot end or cold end should have multiple contacts 12. The distance between two adjacent thermocouples 1 is 1, which is hereinafter referred to as the design specification. Hereinafter, the structure of another conventional thermopile sensor will be described. FIG. 2A shows a top view of a conventional thermopile sensor. Fig. 2B is a cross-sectional view taken along the line M-M of Fig. 2A, and Fig. 2C is a wiring diagram of Fig. 2A. As shown in Figures 2A and 2B, the structure of this type of thermopile sensor is mostly similar to Figures 1A and 1B, and will not be described in detail here. Comparing FIG. 2B and FIG. 1B, the difference between the two is: The thermopile sensor of FIG. 2B is a floating plate (first dielectric layer 2) caused by anisotropic etching on the front side of the wafer to support the plurality The thermocouple 11 and the black body layer 7 and the like, and the thermopile sensor of FIG. 1B is a thin film (the first dielectric layer 2) formed by the anisotropic engraving on the back of the wafer to support the plurality of thermocouples 11 and Blackbody layer 7 and so on. The characteristics of the thermopile sensor will be described below. The characteristics of the above thermopile sensor can be expressed in the following quantities:

III11

Page 5 4〇fi446 V. Description of the invention (3) Measure Rv, Johnson noise V], equivalent and special

j τ from noise power NFP

The fixed detection rate D *, its corresponding formula can be expressed as: Force NbP Να 〇s + Gg + Gr

Vj = V4®47 D '

κ ~ mF (1) (2) ⑶ (4) where N is the number of thermocouples connected in series, and α is the number U / W. Gs, Gg, and Gr are the element's Baker system and radiant heat conduction, respectively. k is the Boltzmann constant, τ is the sensed solid, pain (.10, R is the resistance value of the thermocouple in series, △ f is the area of the thermostat of the bottle, tube, and tube.,,, neck width, and A In order to sense the gas for such a thermopile sensor, its high-quality fixed height sensing degree 1 and the specific measurement rate D * reduce the Johnson Sensitivity = · ^ Power NEP. In order to compare the normality, in the fixed If the sensor ’s NEP value is smaller, the sensor ’s NLE value is smaller, ie, the larger the inverse value (Rv / Vj) of the NEP is, the better. Yuetong's 'Yearly' thermoelectric stacks made with semiconductor lithography and micromachining technologies can be found in the following attachment: ^ (l). GRLahiji and KDWise, " A batch-fabricated silicon thermopile infrared detector ", IEEE Trans. Electron Devices ED-29,

〇ft446 V. Description of the invention (4) PP14-22, (1 982) (Annex I);. (2). W.G. Baer, T. Hull, Kevin D. Wise, K.

Najafi and Kensall D. Wise, " A multiplexed silicon-infrared thermal imager ", Transducers 9.1, pp631-634, (1991) (Annex II); (3). R. Lenggenhager, H. B a 11 es, J. Peer and M. Forster, " Thermoelectric infrared sensors by CMOS technology ", IEEE Electron Device Letters 13, 4 5 4, (1 9 9 2) (Annex III); and (4). E. Olgun, O. Akar, H. Kulah and T. Akin, " An integrated thermopile structure with high responsivity using any stndard CMOS process ",

Trans, ducers’97, PP 1 2 6 3-1 2 6 6, (1 9 9 7) (Annex 4). (Shenfeng Institute ^ f = Dedicated as an example, the meta-metal proposed by E. 〇1 gun et al. = = 2 to 2 is caused by the Seebeck coefficient α r ^ 卞 王 一 J / 、 啕 更 啕To). However, this result can be deduced from the formula ⑴ as N-type silicon and P-type silicon phase, and J noise is higher than other sensors. The reason is that the overall sensor R and other metal materials have high resistance values. The production of materials and pieces must match the value of ^ ^ without much change. In addition, this one-dimensional completion is completed, which increases the complexity of the process: etch suppression method of P + + crystalline silicon / metal thermopile sensing stray t reduces the yield of mass production. Although the value of 1 is lower, the V: value is the same.

A06446 5. Description of the invention (5) Low. Therefore, the Rv / t of a polycrystalline silicon / metal thermopile sensor is similar to that of an N-type polysilicon. Silicon / P-type silicon sensor. Polycrystalline silicon / metal thermopile sensors have the advantages of simple manufacturing process and high yield. Therefore, how to improve the characteristics of this sensor is the subject to be explored and discussed below. From formula (1), it can be found that the most direct way to increase the Rv value of the sensor is to increase the number of thermocouples N, or choose a material with a high 0: coefficient. However, N and α are determined by the process design specification λ (distance between thermocouples) and Material decision. After the process is selected, it cannot be changed. In this case, improving the structure's heat conduction value (05 + 08 邝 "is another feasible way. This is because reducing the heat conduction value will not only increase the value of the sensor, but also according to formula (2) V; has no effect, so its Rv / V; value can be increased accordingly. Generally, the heat conduction value of the structure of this type of sensor is dominated by the solid heat conduction value 05, because a large number of thermocouples N has increased. Solid heat conduction value. Therefore, it is the object of the present invention to effectively reduce the solid heat conduction value of a thermopile sensor without changing the component manufacturing process. The following will explain the conventional thermopile sensor manufacturing layout caused by its high quality Analysis of the polycrystalline silicon / metal thermal sensor can find the Seebeck coefficient (about 50 to 2000 times of A 1 and Au metal) and resistance value (about A1, Au metal) 1000-2000 times), and its solid thermal conductivity value is dominated by metal (in general sensors, the thermal conductivity value of metal is about 3 times that of polycrystalline silicon). Therefore, it can be effective if the thermal conductivity value of metal can be reduced increase 1 value. In general, intuitive method of reducing thermal conductivity values, i.e.

_406446_ V. Explanation of the invention (6) is to increase the distance of heat transmission. For the layout of traditional sensors, it is to extend the strip material constituting the thermocouple. Although this can effectively reduce the thermal conductivity value, it is accompanied by more Many disadvantages. Firstly, the resistance value of polycrystalline silicon is increased due to the increase in length, which causes the L value to increase, so the Rv / Vj value does not increase significantly; secondly, the increase in length makes the mechanical characteristics of the suspension structure more fragile, and easily causes the film to crack; Finally, because the equivalent area of the sensor is increased, the number of units per unit area is reduced. Therefore, it is necessary to consider the above problems while reducing the heat conduction value. Fig. 3A shows a schematic partial layout of a conventional thermopile sensor. Referring to Fig. 3A, the polycrystalline dream conductor 3 is composed of a polycrystalline material 'and the metal conductor 5 is composed of a metallic material, and may also be composed of gold or 1C-compatible aluminum. The polycrystalline silicon conductor 3 and the metal conductor 5 are located on the first dielectric layer 2 and the second dielectric layer 4, respectively, and make ohmic contact only in the hot contact area 冷 and the cold contact area. Based on the above reasons, for a thermopile sensor of this structure, directly extending the length of the thermocouple cannot obtain a better effect. Although the layout of the sensor is best to obtain the maximum number of thermocouple pairs N, the distance λ between the thermocouples is its minimum design specification. If the selected materials and processes have been determined, the characteristics of the sensor will also be determined. As mentioned earlier, the solid heat conduction value of a thermopile sensor is determined by the metal conductor 5 composed of a metal material. Therefore, if the effective length of the metal conductor 5 can be increased, its heat conduction value can be effectively reduced. Figure 3B shows a partial layout of another conventional thermopile sensor. Referring to FIG. 3B, the polycrystalline silicon conductor 3 and the metal conductor 5 are also located on the first dielectric layer 2 and the second dielectric layer 4, respectively, and are used only in the hot contact area Η and the cold contact area.

Page 9 406446 V. Description of the invention (7) Contact with Mu. It is characterized in that the metal conductors 5 composed of metal materials are arranged in a curved manner. Under the condition that the design specifications have been fixed, although the effective length of the metal conductor 5 is increased by η times (η > 1), the distance between the thermocouples 11-will also increase by about η λ. Therefore, it does not have much influence in increasing Rv. In the following, the problems faced by the conventional method of manufacturing a thermopile sensor will be described. The main problems faced in the production of thermopile elements using silicon anisotropic etching are two: one is the structural deformation or cracking caused by the residual stress of the floating structure; the other is the vibration and The suspension structure rupture caused by cooling water flushing. In general, residual stress compensation can be accomplished using silicon oxide and silicon nitride with different stress properties in the IC process. Therefore, the damage caused by the traditional diamond knife wafer cutting is a major problem facing the production of thermopile sensors. One solution is to etch on the scribe line while performing silicon anisotropic etching of the suspension structure. The disadvantage of this method is that the effective area occupied by the scribe line is too large, thereby reducing the sensing output per unit area.器 数。 Number of devices. Therefore, it is another object of the present invention to solve the problems faced by the above production methods. Therefore, the purpose of the present invention is as follows: (1) To improve the characteristics of a thermopile infrared sensor, that is, to reduce the polycrystalline silicon / metal thermopile infrared sensitivity without changing the sensor area, chip size, and number of thermocouples. The solid heat conduction value of the detector to increase the sensitivity and keep the Jansen noise unchanged; (2) Improve the production yield: use high-density plasma active ion etching technology

Page 10 406446 V. Description of the invention (8) Simultaneously used as anisotropic etching and wafer separation technology to form a suspended structure, to replace the traditional silicon anisotropic etching and wafer cutting methods to increase the number of components per unit area and increase production Yield. [Comprehensive description of the invention] Therefore, the object of the present invention is to provide a thermopile infrared sensor and a method for manufacturing the same, which can improve the characteristics of the sensor and increase the yield rate of production. According to a first aspect of the present invention, a thermopile infrared sensor includes: a silicon substrate; a first dielectric layer on the silicon substrate; and a plurality of polycrystalline silicon conductors on the first dielectric layer. A second dielectric layer on the first dielectric layer and the polycrystalline silicon conductor to cover the polycrystalline silicon conductor; a plurality of metal conductors on the second dielectric layer; a third dielectric layer on the first dielectric layer Two dielectric layers and the above-mentioned metal conductors are used to cover the above-mentioned metal conductors; and a blackbody layer is located in the central region of the third dielectric layer to absorb heat; wherein the silicon substrate, the first to third dielectrics, The electrical layer and the metal conductor each include a thermally insulated region located in the central region and a heat sink region located outside the central region, and the metal conducting system is electrically connected in series and in contact with the plurality of hot ends in the thermally insulated region. The heat sink body area is in contact with a plurality of cold ends; the above-mentioned thermopile infrared sensor further includes: a fourth to n-th dielectric layer (where η is a positive integer greater than or equal to 4) and sequentially arranged Yudi Between the three dielectric layers and the black body layer, and the fourth dielectric layer is adjacent to the third dielectric layer; and the metal conductive system is in a meandering shape, more inclusive

— 406446 V. Description of the invention (9) Contains: the first to (n-2) metal sub-conductors of the complex array, wherein the-metal sub-conducting system is interposed between the second and third dielectric layers, the first (N-2) The metal subconducting system is interposed between the (nl) th and nth dielectric layers, and the kth metal subconductor (l < k < n-2, where k is a positive integer) is interposed respectively Between the (k + Ι) th and (k + 2) th dielectric layers, and each of the first to (n-2) th metal subconductors is projected onto the second dielectric layer, it presents the first Arranged in order to (n-2) th metal sub-conductor. According to the type of the sensor, the cutting should be in place, and the cutting conductor with multiple first dielectrics is dielectrically formed on the first and first crystalline silicon-shaped electrical layers according to the manufacturing force of the present invention; therefore, the first contact Hot junction and cold crystalline silicon are conductors of the third dielectric and two metals, one group of which is more than the first gold channel; in the body, the hot junction of silicon conductors and methods, materials, dielectric layers The second dielectric metal conductive end, the body and the metal conductor contacted by the sub-conductor on the first stacked electrical layer include the following polycrystalline silicon material on the opposite side of the above-mentioned Shi Xi formed on the stacked electrical layer upper body and the center respectively-metal conductive ~ The formation of the third medium is suitable for the formation of thermal conductors, and the steps are as follows: a broken substrate is formed on the first substrate to form a first intersecting scribe lane on the silicon substrate; the first-conductor; the second on the polycrystalline silicon The dielectric layer is formed by forming the hot end and the cold end of the above-mentioned polycrystalline stone formed by a plurality of odd-numbered pairs in a curved shape; and the second dielectric layer is formed by a plurality of singularities. % Of gold The polysilicon conducting end and the cold end are not formed by the same, and the second metal subconducts infrared rays, and an electrical layer, an edge film, a dielectric layer conductor are connected to a plurality of first gold conductors, but the same electrical layer and the cutting subconductor are not connected. Contact group polycrystalline system and

AM446 V. Description of the invention (10) The first metal conductor is projected on the first system and is arranged on two adjacent first gold and second metal sub-conductors; the first metal conductor is deposited on the edge film covering the hot end. A plurality of engraved window covers are formed under the hot end, and the upper part is accurate; the black body layer and the fourth dielectric material are stacked to form a wafer fixing layer; when the board performs high-density plasma active ions through the cutting window in a dry type And removing the wafer fixing layer on the back surface of the silicon substrate, so that the heat-like polycrystalline silicon conductor and the curved gold according to the present invention effectively reduce the heat transfer of the overall structure, and furthermore, the present invention uses high-density electricity to remove silicon. The substrate material and the left-over money engraving technology are used to complete the wafer separation type to increase the production yield. [Brief description of the diagram] Figure 1A shows a conventional heat map. Figure 1B is along the line L of Figure U. Figure 1C is the thermopile sense of Figure 1A. Figure 2A shows a conventional thermal dielectric layer. The metal subconductors belong to the conductor; a plurality of cuts are formed between the third dielectric layer and the four dielectric layers-to form a plurality of blackbody layers; the above-mentioned insulation window, the above-mentioned etching window, the above-mentioned etching window, and the above-mentioned cutting On the electrical layer, the silicon-based money is engraved with a polymer thick film material through the above-mentioned engraved window to form a plurality of depressions. The wafer is separated by anisotropic etching. A wafer fixing tape is adhered, and then the sensing is performed. Manufacturing process. The stack infrared sensor uses a pair of thermocouples joined by straight conductors, which can guide the characteristics and increase the sensitivity of the component. I active ion etching technology, selective thin film structure. At the same time, the top view of the traditional diamond knife-cutting square-stack sensor is replaced by a dry type. A sectional view of L. Wiring diagram of the tester. Top view of a stack sensor. 406446 V. Description of the invention (11) FIG. 2B is a cross-sectional view taken along the line M-M of FIG. 2A. FIG. 2C is a wiring diagram of the thermopile sensor of FIG. 2A. FIG. 3A is a schematic three-dimensional wiring diagram of the thermopile sensor according to FIGS. 1A and 2A. FIG. 3B is a three-dimensional wiring diagram of another thermopile sensor. 4A and 4B are schematic cross-sectional views of different parts of a thermopile sensor according to a preferred embodiment of the present invention. Fig. 4C is a schematic three-dimensional wiring diagram of the thermopile sensor according to Figs. 4A and 4B. Fig. 5 is a graph showing the relationship between the input power and the output thermoelectromotive force of a thermopile sensor with an SMT structure and a conventional structure according to the present invention. 6A to 6A are schematic diagrams showing a manufacturing process of a thermopile sensor according to the present invention in a cross section. Figs. 7A to 7A are schematic diagrams showing the manufacturing process of the thermopile sensor according to the present invention in another section. [Description of symbols] 1 ~ dream substrate 2 ~ first dielectric layer 3 ~ polycrystalline silicon conductor _4 ~ second dielectric layer 5 ~ metal conductor 5a ~ first metal sub-conductor 5b ~ second metal sub-conductor

Page 14 406446 V. Description of the invention (12) 6 ~ Third dielectric layer 7 ~ Black body layer 8 ~ Depression 9 ~ Thermal insulation region 1 0 ~ Heat sink region 1 1 ~ Thermocouple 1 2 ~ Contact 1 3 ~ Fourth dielectric layer 1 4 ~ Cutting track 15 ~ Etching window 16 ~ Cutting window 17 ~ Wafer fixing layer 18 ~ Tape [Description of the preferred embodiment] In order to solve the above-mentioned problem, the present invention proposes another multilayer bending Metal-like method (Serpentine Multi meTal, hereinafter referred to as SMT) to achieve the purpose of reducing thermal conductivity. 4A and 4B are cross-sectional views of different parts of a thermopile sensor according to a preferred embodiment of the present invention, and FIG. 4C is a schematic three-dimensional layout diagram of the thermopile sensor according to a preferred embodiment of the present invention. As shown in FIGS. 4A and 4B, the thermopile sensor includes: a stone substrate 1; a first dielectric layer 2 and an insulating film 2 ', which are located on the front and back of the silicon substrate 1, respectively; and a plurality of polycrystalline silicon conductors 3, located on the first dielectric layer 2; a second dielectric layer 4, located on the first dielectric layer 2 and the polycrystalline silicon conductor 3, for covering the polycrystalline silicon conductor 3; a plurality of first metal sub-conductors 5a, located On the second dielectric layer 4; a third dielectric

Page 15 406446 V. Description of the invention (13) f 6 is considered on the upper second dielectric layer 4 and the first metal sub-conductor 5a, and is used for "Ϊ; 6 / ,; the plurality of second metal sub-conductors 5b, located at上 On the dielectric layer 6, a fourth dielectric layer 13 is located on the third dielectric layer 6 and the second sub-conductor 5b to cover the second metal sub-conductor 讣; a mile: gold 7 is located on the first Among the four dielectric layers 13 are μm…, the body layer and a canopy 8. The central layer of the layer 13 is used to absorb heat; referring to FIG. 4C, we can understand the measurement of this embodiment more clearly. The layout of the components. Comparing FIG. 4C with FIG. 3A, this implementation is sensitive to dividing the metal conductor 5 of FIG. 3A into an odd-numbered pair of features 5a and an even-numbered pair of second metal sub-conductors 5b. Among them, the first gold metal The sub-conductor 5a and:-the intersecting sub-conductor "are made of two identical metal processes: formed on the first; the electrical layer 4 and the third dielectric layer 6; Because there is a third dielectric layer 6 between the "shape 5a" and the second metal sub-conductor 5b, the first and ^^ and 5b of the SMT can be overlapped with each other during the layout without causing short, -In the case where the minimum design specification of the 'body' remains unchanged: =: The dagger can be used in the length of the two-metal subconductor 5U5b, so as to increase the sensing of the first and second devices. In order to prove the feasibility of SMT, the cantilever-type thermopile knives made by the eighth layout method of the present invention should be shown in Figures 3A and 40 / Tang as two aluminum, corresponding to η The value is also about 2. The width of the metal used is ^!) // !!!, the number of thermocouples N = 21, and its size is 200 " m, and 64.8kQ. About the SMT junction of the present invention is the relationship between the input power and the output thermal voltage of the 64.2 ΙΩ tester. The structure of the thermopile inductor is shown in Figure 5, which can be issued --406446_ V. Description of the invention (14) Under the same radiation wheel input, the thermopile sensor of SMT technology has a higher wheel output voltage, which increases by a multiple. It is caused by the effective reduction of the heat conduction value, and its resistance value does not affect its 1 value. Therefore, only two additional electrical processes are required in the manufacturing process to make the Rv / L value more effective than the traditional thermopile sensing element. In addition, the present invention also provides a thermopile infrared sensor manufacturing. Figure 6A To 6H are schematic diagrams showing the manufacturing process of a thermopile infrared sensor according to a preferred embodiment of the present invention with a cross section of a part. Figs. 7A to 7H are schematic cross-sectional views showing the manufacturing process of a thermopile infrared sensor according to a preferred embodiment of the present invention. As shown in FIG. 6A and FIG. 7A, a silicon substrate 1 is first provided, and then a low-stress dielectric material is used to form a first dielectric layer 2 on the Shixi substrate 1 and located on the first dielectric layer 2. An insulating film 2 is formed on the opposite silicon substrate, and then a plurality of scribe lines 14 are formed on the first dielectric layer 2. Then, as shown in FIGS. 6B and 7B, a plurality of polycrystalline silicon conductors 3 are formed on the first dielectric layer 2 with polycrystalline silicon. Next, a second dielectric layer 4 'is deposited with a dielectric material on the polycrystalline silicon conductor 3 and the first dielectric layer 2 to form a plurality of scribe lines. Then, a plurality of first metal sub-conductors 5a are formed in a meandering shape on the second dielectric layer 4, and the first metal sub-conductors 5a are in contact with the odd-numbered pair of polycrystalline silicon conductors 3 at the hot end and the cold end (not shown). Next, as shown in FIGS. 6C and 7C, on the second dielectric layer 4 and the first metal

Page 17 406446 V. Description of the invention (15) A third dielectric layer 6 'is stacked on the sub-conductor 5a and a plurality of scribe lines 14 are formed. Then 'a plurality of second metal sub-conductors 5b are formed in a meandering shape on the third dielectric layer 6, and the second metal sub-conductors 5b and the polycrystalline silicon conductor 3 of the even pair are in contact with the hot end respectively' and the second metal sub-conductor 5b When the first metal sub-conductors 5a are projected on the first dielectric layer 2, each second metal sub-conductor 5b is interposed between two adjacent first metal sub-conductors 5a. Then, as shown in FIGS. 6D and 7D, a fourth dielectric layer 13 'is stacked on the third dielectric layer 6 and the second metal sub-conductor 5b to form a plurality of scribe lines 14. Next, a black body layer 7 is formed in a region covering the hot end H. Next, as shown in FIGS. 6E and 7E, a plurality of etching windows 15 and cutting windows 16 are formed on the insulating film 2. The etching windows 5 are covered under the hot end η and each cutting window 16 Align with β of each cutting track 14 Then, as shown in FIGS. 6F and 7F, a high-molecular thick film material is stacked on the black body layer 7 and the fourth dielectric layer 13 to form a wafer fixing layer 17 ^ 接 & gt As shown in FIGS. 6G and 7G, the silicon substrate 8 ^ ΐ density plasma (HDP) active ion etching is performed on the silicon substrate 8 through the etching window 15 to form a plurality of depressions 8 ′ at the same time through the cutting window 16 in the same dry type The square axis is carved into the film separation process. After that, as shown in FIGS. 7H and 8H, the broken substrate is fixed to 4 =, and then the wafer fixing layer is removed, to complete the production process of the surface of the sensor. Therefore, the manufacturing process of the present invention is characterized by: (1-17 the process of engraving and cutting, which will break the day-to-day phenomenon; (2) the use of high-density electrical signals, and electro-active ion etching technology, and

40 ^ 446 V. Description of the Invention (16) Simultaneously perform wafer anisotropic etching and wafer separation processes to take silicon anisotropic etching and wafer cutting methods to increase unit crystal and increase production yield. Generation of traditional round capacity

Page 19

Claims (1)

406446 VI. Scope of patent application 1. A thermopile infrared sensor, comprising: a stone substrate; a first dielectric layer on the silicon substrate; a plurality of polycrystalline silicon conductors on the first dielectric layer; A second dielectric layer on the first dielectric layer and the polycrystalline silicon conductors to cover the polycrystalline silicon conductors; a plurality of metal conductors on the second dielectric layer; a third dielectric layer, Located on the second dielectric layer and the metal conductors to cover the metal conductors; and a blackbody layer located in a central region of the third dielectric layer to absorb heat; wherein the silicon substrate, The first to third dielectric layers and the metal conductors each include a thermal insulation region located in a central region and a heat sink region located outside the central region, and the metal conductive systems are electrically connected in series, and It is in contact with a plurality of hot ends in a thermal insulation region, and is in contact with a plurality of cold ends in a heat sink region; It is characterized in that the thermopile infrared sensor further comprises: a fourth to n-th dielectric layer (η is greater than Equal to 4 (Integer), sequentially interposed between the third dielectric layer and the black body layer, and the fourth dielectric layer is adjacent to the third dielectric layer; and the metal conductive system is in a meandering shape, more Including: the first to (η-2) metal sub-conductors of the complex array, wherein the first metal sub-conducting system is interposed between the second and third dielectric layers, the first Page 20_406446_ VI. Patent application scope (n-2) The metal subconducting system is interposed between the (nl) th and nth dielectric layers, and the kth metal subconductor (l < k < n- 2, k is a positive integer) are respectively interposed between the (k + 1) th and (k + 2) th dielectric layers, and each of the first to (n-2) th metal subconductors After the groups are projected onto the second dielectric layer, they are arranged in the order of the first to (n-2) th metal sub-conductors. 2. For the thermopile infrared sensor of item 1 of the scope of patent application, the value of η is 4. 3. A method for manufacturing a thermopile infrared sensor, comprising the following steps: providing a broken substrate; forming a first dielectric layer on the silicon substrate with a low-stress dielectric material, and positioning the first dielectric layer on the silicon substrate; An insulating film is formed on the silicon substrate on the opposite side of the electrical layer, and then a plurality of scribe lines are formed on the first dielectric layer; a plurality of polycrystalline silicon conductors are formed on the first dielectric layer with polycrystalline silicon; and on the polycrystalline silicon A second dielectric layer is stacked with a dielectric material on the Shi Xi conductor and the first dielectric layer, and a plurality of cutting tracks are formed; and a plurality of first metal sub-conductors in a meandering shape are formed on the second dielectric layer, The first metal sub-conductors are in contact with the hot and cold ends of the polycrystalline silicon conductors in odd pairs, respectively. The hot and cold ends formed by the contact are not formed by the same group of polycrystalline silicon conductors and the first metal sub-conductor; Stacking a third dielectric layer on the second dielectric layer and the first metal sub-conductors and forming a plurality of cutting tracks; forming a plurality of second metal sub-conductors in a meandering shape on the third dielectric layer, The first Polycrystalline silicon conductors with two metal subconductors and even pairs Page 21 _406446_ 6. The scope of the patent application is that the body is in contact with the hot end. The hot end and the cold end formed by the contact are not formed by the same group of polycrystalline silicon conductor and the second metal subconductor, and the second metal subconductor system. When the first metal sub-conductors are projected on the first dielectric layer, each of the second metal sub-conductors is interposed between two adjacent first metal sub-conductors; between the third dielectric layer and A fourth dielectric layer is stacked on the second metal sub-conductors, and a plurality of cutting tracks are formed; a plurality of black body layers are formed on the area covering the hot end; a plurality of etching windows and cuttings are formed on the insulating film Windows, the etched windows are covered under the hot ends, and the cutting windows are aligned with the cutting tracks; on the blackbody layer and the fourth dielectric layer, a polymer thick The film material is stacked to form a wafer fixing layer; the silicon substrate is subjected to high-density plasma active ion etching through the etching windows to form a plurality of depressions, and the wafers are separated by dry anisotropic etching through the cutting windows. A wafer fixing tape is adhered to the back of the silicon substrate, and then the wafer fixing layer is removed to complete the manufacturing process of the sensor. Page 22