407362 A7 B7 _ 五、發明說明（l ) (發明所屬之技術領域） 本發明有關於使用半導體自力消弧元件之功率變換裝 置，特別是有關於備有經改良之緩衝器之功率變換裝置。 (先前技術） 在於使用電晶體，IGBT等之自力消弧元件之功率 變換裝置中，爲了抑制當自力消弧元件之隔斷電流時之由 電路電感所致之跳昇電壓起見，以傍通存蓄於電感之能量 爲目的在自力消弧元件之兩端間將連接緩衝電路。 在於電流容量大，開關頻數比較高之自力消弧元件之 緩衝電路就有，如日本專利公報實開平6 — 7 7 2 5 9號 圖3所揭示之串聯連接電容器與二極體而介著電阻將電容 器之充電能予以放電之方式乃習知。 又，爲了抑制上述緩衝二極體之恢復所致之跳昇電壓 而如同公報特開平3— 1 0 7 3 2 8號圖3所揭示，與緩 衝二極體並聯地連接電容器、電阻器之串聯電路者。 (發明所欲解決之課題） 以上述先前技術時對於抑制由緩衝二極體之恢復所致 之跳昇電壓及抑制振動之效果並不充分，而會發生雜訊， 特別是會推昇自數ΜΗ z到數十ΜΗ z帶之雜訊水平而有 不得不加大雜訊濾波器等之雜訊抑制裝置之問題。 本發明之目的乃以提供提高了抑制由緩衝二極體之恢 復所致之跳昇電壓之效果之經改良之功率變換裝置也。 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐） i I J-----------------1 ^ilm —11^ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -4- 一 一 經濟部智慧財產局員工消費合作社印製 A7 ______B7 五、發明說明6 ) (解決課題之手段） 本發明乃在其一面而言，乃在具備有並聯連接於功率 變換裝置之構成構件之半導體元件之第1電容器及二極體 之第1串聯連接體及並聯連接於此二極體之第2電容器及 電阻器之第2串聯連接體之功率變換裝置中，將上述第丄 第2之串聯連接體使之成一體地予以模製爲其特徵者。 依此構成時得將第2之緩衝器近接於緩衝二極體地予 以配置，由而可以抑制此緩衝電路之電感於小値以資將緩 衝二極體之恢復所致之跳昇電壓抑制於小値。 本發明係其其他之面而言，乃在具備有並聯連接於功 率變換裝置之構成構件之半導體元件之第1電容器及二極 體之第1串聯連接體及並聯連接於此二極體之第2電容器 及電阻器之第2串聯連接體之功率變換裝置中，将上述第 1串聯連接體與第2電容器成一體地予以模製爲其特徵者 0 依此構成時，得將第2之電容器近接於緩衝二極體地 予以配置，由而可抑制電路之電感於小値，除了可抑制由 緩衝二極體之恢復所致之跳昇電壓於小値之外，亦可以防 止由上述之第2之電阻器之發熱所致之對於第1及第2之 電容器之熱的影響也。 本發明乃又在另一面而言，將上述緩衝二極體與第2 電容器據位於大致同一平面上地予以配置，且使之靠近且 排齊於上述第1電容器地予以配置，而將上述第1串聯連407362 A7 B7 _ V. Description of the invention (1) (Technical field to which the invention belongs) The present invention relates to a power conversion device using a semiconductor self-arc extinguishing element, and more particularly to a power conversion device provided with an improved buffer. (Prior art) In power conversion devices using self-powered arc extinguishing elements such as transistors, IGBTs, etc., in order to suppress the jump voltage caused by the circuit inductance when the self-powered arc extinguishing element cuts off the current, The purpose of the energy stored in the inductor is to connect a buffer circuit between the two ends of the self-extinguishing arc extinguishing element. There is a buffer circuit of a self-powered arc extinguishing element with a large current capacity and a relatively high switching frequency. For example, the Japanese Patent Gazette Shikaihei 6-7 7 2 5 9 Figure 3 discloses a series connection of a capacitor and a diode with a resistor interposed therebetween. The manner in which the capacitor's charge can be discharged is known. In addition, in order to suppress the jump voltage caused by the recovery of the above-mentioned buffer diode, as disclosed in Japanese Unexamined Patent Publication No. Hei. 3-1 0 7 3 2 8 Figure 3, a series connection of a capacitor and a resistor is connected in parallel with the buffer diode. Circuit person. (Problems to be Solved by the Invention) In the above-mentioned prior art, the effect of suppressing the jump voltage and vibration caused by the recovery of the buffered diode is not sufficient, and noise may occur, especially the number will increase There is a problem that the noise level of the MZz band to tens of MZz bands has to be increased by noise suppression devices such as noise filters. It is an object of the present invention to provide an improved power conversion device which improves the effect of suppressing the jump voltage caused by the recovery of a buffered diode. This paper size applies to China National Standard (CNS) A4 (210x297 mm) i I J ----------------- 1 ^ ilm —11 ^ (Please read the note on the back first Please fill in this page for further information) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4-1 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ______B7 V. Description of Invention 6) (Means for Solving the Problems) On the one hand, it is the first series connection body including a first capacitor and a diode of a semiconductor element connected in parallel to the components of the power conversion device, and a second capacitor and resistor connected in parallel to the diode. In the power conversion device of the second series connection body, the second series connection body described above is integrally molded as its characteristic. According to this structure, the second buffer must be arranged close to the buffer diode, so that the inductance of this buffer circuit can be suppressed in Xiaoying to suppress the jump voltage caused by the recovery of the buffer diode. Xiaoyan. The present invention is, in other aspects, a first series connection body including a first capacitor and a diode of a semiconductor element connected in parallel to constituent elements of a power conversion device, and a first connection body connected in parallel to the diode. In the power conversion device of the second series connection body of the two capacitors and resistors, the first series connection body and the second capacitor are integrally molded as the characteristics. 0 When this structure is adopted, the second capacitor may be formed. Placed close to the buffer diode ground, so that the inductance of the circuit can be suppressed to Xiaoyan. In addition to suppressing the jumper voltage caused by the recovery of the buffer diode to Xiaoyan, it can also prevent the The heat generated by the resistor of 2 also affects the heat of the first and second capacitors. According to another aspect of the present invention, the buffer diode and the second capacitor are arranged on substantially the same plane, and are arranged close to and aligned with the ground of the first capacitor. 1 in series
Ik!!!· t A I 1 {請先W讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -5- 經濟部智慧財產局員工消費合作社印*'取 407362 a： _____B7_______ 五、發明說明S ) 接體及第2電容器成一體地予以模製爲其特徵者。 依此構成時，對於容積比較大之第1電容器以靠近且 排齊的配置該比較的容積小的上述緩衝二極體及構成該緩 衝器之第2電容器而實施模製，由而可以使緩衝配線非常 短，更可抑制電感値於小値，由而將由緩衝二極體之恢復 所致之跳昇電壓或振動可抑制於非常小之値也。 於本發明之再一其他之面而言，將上述緩衝二極體與 第2電容器配置於上述半導體元件與上述第1緩衝電容値 所挾接之緩衝器引出端子之導體板，而將上述第1之串聯 體及第2電容器成一體地予以模製爲特徵者。 依此構成時，得將上述第2緩衝器非常接近的配置於 連接於半導體元件之緩衝器端子之導體板地可以配線，所 以可以將上述第2之緩衝器之配線對於上述第1電容器與 上述緩衝器端子之導體板之間之緩衝二極體地非常的短， 更可抑制電感，可以抑制由緩衝二極體之恢復所致之跳昇 電壓於極小値也。 (發明之實施形態） 圖1係依本發明之一實施例之實力變換裝置之電路圖 ，標號1及2係I GBT等之自力消弧元件，串聯連接於 直流端子3，4間。標號5係表示電路之配線電感。緩衝 器組件6，7乃連接於自力消弧元件之I GBT1及2之 兩端間。這些緩衝組件6，7係分別備有緩衝電容器8， 9及緩衝二極體1 〇，1 1之第1串聯連接體（略稱爲 本紙張尺度適用中國國家標準（CNS)A.i規格（210 X 297公釐) ~ - - . Is— — — — — — I! I! ——— — — — II ^ ·1111111 ^ (請先Μ讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 407362 A7 __ B7__ 五、發明說明4 ) CD緩衝器）。這些各串聯連接點12，13係由引出線 (端子）1 4，1 5而引出於組件之外，而與各直流端子 4，3之間連接放電電阻器1 6，1 7。上述各緩衝二極 體1 0，1 1之兩端間分別連接由第2緩衝電容器1 8或 1 9及電阻器2 0，或2 1之第2串聯連接體所成之CR 緩衝器22或23。 由上述而構成功率變換裝置之一相份2 4。以其他二 相份2 5及26而構成三相功率變換裝置。27，28， 2 9係其三相交流端子。 CD緩衝器8，10或9，11係具有當各IGBT 1或2之OF F時之配線電感5所存蓄之能量經由各 I G B T傍通吸收之作用，以資抑制過電壓之發生。換言 之雖然I GBT1或20FF之後，使緩衝電容器8或9 充電的使電流經過二極體1 0或1 1繼續流通以資抑制過 電壓之發生。此充電係繼續到配線電感5之存蓄能相等於 緩衝電容器8或9之充電能爲止。不久會停止。對於電容 器之充電終了時，存儲於電容器8或9之能量乃介著直流 電源（不圖示）而對於放電電阻1 6或1 7開始放電。 當緩衝電容器8或9之自充電而移行至放電之階段， 而在緩衝二極體1 0或1 1有微小之逆電流（恢復電流） 流通，不久會急峻的停止，由而緩衝二極體1 0或1 1之 兩端將發生鬚狀之電壓振動。該起因於二極體之恢復之振 動將引起電磁雜訊，有引起機器之誤動作，對音響機器之 雜訊之發生等等障礙。因此使須要有插入雜訊濾波器等外 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） - - ------------:裝--------訂· (請先Μ讀背面之注意事項再填寫本頁) 407362 B7 五、發明說明έ ) (請先閱讀背面之注意事項再填寫本頁) 部對策，而恢復電壓大時濾波器也須要用大型者。爲了在 內部抑制由二極體之恢復所致之振動起見，如上述在緩衝 二極體1 0或1 1之兩端連接CR緩衝器2 2或2 3。 在本實施例中，這些CR緩衝器2 2或2 3係成一體 地組入在緩衝器組件6或7之內部。下面說明該構成。 圖2係依本發明之功率變換裝置一相片臂之斜視圖。 在收容有I GBT1之I GBT組件3 0之端子上以 螺絲固定自緩衝器組件6所引出之引出端子3 1 ，3 2 , 在緩衝器組件6內藏有，如圖1之電路所說明之由緩衝器 (第1 )電容器8及緩衝二極體1 0之串聯連接體所成， 連接於引出端子3 1與3 2之間之CD緩衝器，及對該二 極體並聯連接之由第2電容器1 8及電阻器2 0之串聯連 接體所成之CR緩衝器22。 經濟部智慧財產局員工消費合作社印製 於是構成自一方之引出端子31而介著直角的豎起之 頸部3 3又折彎於直角之導體板3 4，及由此導體板3 4 再連繫於豎立於直角之豎立部3 5之導體蓋。該豎立部 3 5之先端連接有組件內最大構件之該緩衝（第1 )電容 器8之一端，自另一方之引出端子3 2也介由直角的豎立 之頸部3 6構成連繫於再度直角的折彎之導體板之導體桿 。在此導體板3 7以連接緩衝二極體1 0之一端1 Ο 1地 予以載置，該二極體1 0之另一端1 0 2即以引線3 9而 連接於，粘貼狀的連接於緩衝電容器8之另一端之導體板 3 8。再者，使乏與緩衝二極體1 0之同一平面上的連接 配置有CR緩衝器2 2之緩衝（第2 )電容器1 8及電阻 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公* ) -8- A7 407362 _______B7 五、發明說明) 器2 0。即緩衝二極體1 〇之陽極端子1 〇 1係連接於導 體板3 7，電容器1 8之一端1 8 1係連接於此導體板3 7。電容器1 8之另一端1 8 2即連接於電阻器2 0之一 端。又電阻器2 0之另一端即連接於上述二極體1 〇之另 一端103。二極體10之另一端102及103係在內 部連繫。將這些成一體以樹脂來模製構成緩衝器組件6。 據位於大致同一平面上之二極體1 0，第2電容器1 8及電阻器2 0即以靠近排齊於緩衝（第1 )電容器8狀 ’且以緩衝（第1 )電容器8及導體板3 7來挾持的被配 置’又由緩衝（第1 )電容器8及I GBT 1所挾持狀的 被配置。 由而將C D緩衝器及C R緩衝器成一體地予以模製收 容於同一封裝內，於是可以使C R緩衝器之配置之自由度 增加，如圖2所示地使之在非常小空間內之配線有所可能 ，C D緩衝器之電流之環即可收納於極小之空間內，由而 可以將配線之電感抑制於很小。再者使流於C R緩衝器及 流於電阻之電流之方向，與流於導體板3 7內之電流之方 向爲相反方向由而抵消配線之磁束，將配線之電感更抑制 於小値，由而將由二極體之恢復所發生之跳昇電壓及振動 非常有效的予以控制。 該結果，可以縮短連接於I GBT 1之構成CD緩衝 器之電容器8與二極體1 〇之配線長度，又可以將連接於 二極體之C R緩齒器之配線長度使之與先前技術之’引出 於C D緩衝器之外部之二個引出端子1 4與3 1之間連接 * 1 ' · J------------裝----II 訂·1!1 — ！線 (請先Μ讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -9 - 407362 B： _ 五、發明說明6 ) (請先Μ讀背面之注意ί項再填寫本頁> CR緩衝器2 2之方式者相比較時顯著地可以縮短，由而 可以使配線之電感爲極小値，充分的可以抑制上述之由二 極體之恢復所致之振動電壓也。 圖3係爲說明本發明之一實施例之效果之用之 IGBT之電流。電壓特性圖。同圖（a)係習用者，將 C R緩衝器2 2或2 3附裝於外部時之特性，如圖中以圓 所圍繞之部份41所示IGBT之集極、射極間電壓 VCD發生振動。同圖（b )係本發明之一實施例之方式將 CR緩衝器2 2或2 3成一體的模製於緩衝器組件6及7 內時之特性。而如以圓圍繞之部份4 2所示I G B T之集 極•射極間電壓V。D之振動乃被抑制於小値。 下面參照圖4〜圖6說明本發明之第2實施例。 圖4係對應於圖1之本發明之其他實施例之功率變換 裝置之電路圖。在與圖1相同之構件標上相同之標號以省 略其說明，在此實施例中，C D緩衝器8，1 0或1 1 * 經濟部智慧財產局員工消费合作社印製 1 3及CD緩衝器2 2或2 3中之第2電容器1 8或1 9 乃成一體地組入於緩衝器組件6 1或7 1之內部，而CR 緩衝器2 2或2 3中之電阻器2 0或2 1即配置於組件之 外部。 圖5係對應於圖2之本發明之其他一實施例電力變換 裝置之一相片臂之斜視圖，圖5係由圖5之箭示V 1方向 所視之圖。 在緩衝器組件6 1內，據位於與緩衝二極體1 0之同 一平面上地連接配置有CR緩衝器2 2之緩衝（第2 )電 本紙張&度適用中國國家標準（CNS)A4規格（210*297公芨） -10- B7 407362 五、發明說明§ ) 谷器1 8。惟電阻器即由組件6 1所引出之引出線4 1， 4 2而引出於組件之外面。配置於組件6 1側近。 據位於大致同一平面上之二極體1 〇，第2電容器 1 8即相靠排齊於在於緩衝（第1 )電容器8與I GBT 組件3 0之間之緩衝器引出端子之導體板狀，這些二極體 1 0、第2電容器1 8，附裝於外部之電阻器2 0乃又被 挾持於緩衝（第1 )電容器8與I GBT組件3 0之狀地 被配置。 該結果，與上述實施例一般，可以充分的抑制由二極 體之恢復所致之振電壓之外，由於電阻器2 0之發熱不容 易傳至緩衝器組件6 1 ，所以可以抑制由電阻器2 0之溫 度上昇所致之緩衝器組件61之溫度之上昇。 在上述之實施例乃，以變流裝置之正側自力消弧元件 1之緩衝器爲例做說明，惟對於負側之自力消弧元件2時 ，只是極性，配置有替換而其他同樣也。 (發明之效果） 依本發明時，利用C D緩衝器組件之封裝之模製而可 以固定C R緩衝器，因此可增加C R緩衝器之配置之自由 度，可以近接於C R緩衝器之二極體的予以配置，所以得 將C R緩衝器電路之電感抑制於極小値，由而有效的可抑 制由緩衝二極體之恢復所致之跳昇電壓或振動，所以可抑 制雜訊之發生，對於外部機器之誤動作之抑制或對於雜訊 濾波器之成本之降低上有效果。 <請先閱讀背面之注意事項再填寫本頁) 裝 I ·1 t 1 I^eJ* 1 ·_1 1 it t— I 線 經濟部智慧財產局員工消費合作社印剎^ 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公芨） -11 - 經濟部智慧財產局員工消費合作社印製 407362 五、發明說明6 ) 又將C R緩衝電阻器外部安裝於組件之外側時即可抑 制組件之溫度之上昇也。 圖式之簡單說明 第1圖係依本發明之一實施例之功率變換裝置之電路 圖。 第2圖係表示本發明之一實施例之功率變換裝置之一 相片臂之構造之斜視圖。 第3圖係表示本發明之一實施例之效果之半導體元件 之電壓•電流特性圖。 第4圖係依本發明之其他實施例之功率變換裝置圖之 電路圖。 第5圖係依本發明之其他實施例之功率變換裝置圖之 一相片臂之構造之斜視圖。 第6圖係第5圖之箭示v1方向視圖。 (標號說明） 1.2 IGBT (半導體自力消弧元件） 3,4 功率變換裝置之直流端子 5 配線電感 6,61,7 緩衝器組件 8,9 C D緩衝電容器 10,11 C D緩衝二極體 14,15,31,32 引出端子 本紙張尺度適用中國國家標準（CKS)Al規格（210 X 297公釐） 12 I.------I 11 ---^----ίιΓ,ι^-l·!· (請先閱讀背面之注意事項再填寫本頁) 407362 A7 B7 經濟部智慧財產局員工消費合作社印制衣 五、發明說明$〇 ) 16,17 放 電 電 阻 器 18,19 C R 緩 衝 電 容 器 20,21 C R 緩 衝 電 阻 器 22,23 C R 緩 衝 器 24 〜26 功 率 變 換 裝 置 之 各 相 27-29 功 率 變 換 裝 置 之 交 流端子 30 I G B T 組 件 34,37,38 導 體 板 39 引 線 41,42 電 阻 器 2 0 之 引 線 ' 一 ' . H ψ— I ^Mw n n Λ I I ^1 ^1 ^1 I i 1 m_l 一0, ^1 ^1 ^1 ^1 ^1 \ (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210* 297公餐） -13-Ik !!! · t AI 1 {Please read the precautions on the back before filling out this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -5- Employees of Intellectual Property Bureau, Ministry of Economic Affairs Consumption cooperative seal * 'take 407362 a: _____B7_______ V. Description of the invention S) The connector and the second capacitor are integrally molded as its characteristics. In this configuration, the first capacitor having a relatively large volume is molded in close proximity to the relatively small buffer diodes and the second capacitor constituting the buffer, so that the buffer can be buffered. The wiring is very short, and the inductance can be suppressed to a small value, so that the jump voltage or vibration caused by the recovery of the buffer diode can be suppressed to a very small value. In still another aspect of the present invention, the buffer diode and the second capacitor are arranged on a conductor plate of a buffer lead-out terminal connected to the semiconductor element and the first buffer capacitor, and the first It is characterized in that the series body of 1 and the second capacitor are integrally molded. With this configuration, the second buffer may be placed on the ground of the conductor plate connected to the buffer terminal of the semiconductor element in close proximity. Therefore, the wiring of the second buffer may be used for the first capacitor and the above. The ground of the buffer diode between the conductor plates of the buffer terminal is very short, and the inductance can be suppressed, and the jump voltage caused by the recovery of the buffer diode can be suppressed to a minimum. (Implementation Mode of the Invention) Fig. 1 is a circuit diagram of a power conversion device according to an embodiment of the present invention. Reference numerals 1 and 2 are self-powered arc extinguishing elements such as I GBT, which are connected in series between DC terminals 3 and 4. Reference numeral 5 denotes a wiring inductance of the circuit. The buffer assemblies 6, 7 are connected between the two ends of I GBT1 and 2 of the self-extinguishing arc extinguishing element. These buffer assemblies 6, 7 are respectively equipped with buffer capacitors 8, 9 and buffer diodes 10, 11 and the first series connection body (abbreviated to this paper standard applicable to China National Standard (CNS) Ai specifications (210 X 297 mm) ~--. Is— — — — — — I! I! ——— — — — II ^ · 1111111 ^ (Please read the notes on the back before filling out this page) Employees of Intellectual Property Bureau, Ministry of Economic Affairs Printed by the consumer cooperative 407362 A7 __ B7__ V. Description of the invention 4) CD buffer). Each of these series connection points 12, 13 is led out of the module by lead wires (terminals) 1, 4, 15 and discharge resistors 16, 17 are connected to the DC terminals 4, 3, respectively. The CR buffer 22 formed by the second buffer capacitor 18 or 19 and the resistor 20 or the 2 in series connection of the two buffer diodes 10 or 11 is connected between the two ends of the buffer diodes 10 or 11 respectively. twenty three. One of the components of the power conversion device is constituted as described above. A three-phase power conversion device is constituted by the other two-phase components 25 and 26. 27, 28, 2 9 are their three-phase AC terminals. The CD buffers 8, 10, 9, and 11 have the function of absorbing the energy stored in the wiring inductance 5 when the OF F of each IGBT 1 or 2 is passed through each I G B T bypass to suppress the occurrence of overvoltage. In other words, although I GBT1 or 20FF, the buffer capacitor 8 or 9 is charged so that the current continues to flow through the diode 10 or 11 to suppress the occurrence of overvoltage. This charging is continued until the stored energy of the wiring inductance 5 is equal to the charged energy of the buffer capacitor 8 or 9. It will stop soon. When the charging of the capacitor is completed, the energy stored in the capacitor 8 or 9 is discharged through the DC power supply (not shown) and the discharge resistor 16 or 17 is started. When the buffer capacitor 8 or 9 self-charges and migrates to the discharge stage, and there is a slight reverse current (recovery current) flowing in the buffer diode 10 or 11, it will soon stop sharply, so the buffer diode A whisker-like voltage vibration will occur at both ends of 10 or 11. The vibration caused by the recovery of the diode will cause electromagnetic noise, cause malfunction of the machine, and cause the occurrence of noise to the audio machine. Therefore, it is necessary to have external paper sizes such as noise filters inserted. The Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applicable.--------------: installation ---- ---- Order (Please read the precautions on the back before filling this page) 407362 B7 V. Description of the invention) (Please read the precautions on the back before filling this page) Some countermeasures, and filter when the restoration voltage is large The device also requires a large person. In order to suppress the vibration caused by the recovery of the diode internally, CR buffers 2 2 or 2 3 are connected to both ends of the buffer diode 10 or 11 as described above. In this embodiment, these CR buffers 22 or 23 are integrated into the buffer assembly 6 or 7 as a whole. This configuration will be described below. FIG. 2 is a perspective view of a photo arm of the power conversion device according to the present invention. The terminals 3 1 and 3 2 drawn from the buffer assembly 6 are fixed with screws to the terminals of the I GBT assembly 30 which contains I GBT1. They are hidden in the buffer assembly 6 as shown in the circuit of FIG. 1. It is formed by the serial connection of the buffer (first) capacitor 8 and the buffer diode 10, the CD buffer connected between the lead-out terminals 3 1 and 32, and the parallel connection of the diode by the first 2 CR buffer 22 formed by a series connection of a capacitor 18 and a resistor 20. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs then printed the terminal neck 31 which was formed from one side and interposed the right-angled neck 3 3 and was bent at the right-angled conductor plate 3 4, and the conductor plate 3 4 was connected again. The conductor cover is attached to an upright portion 35 standing at a right angle. The tip of the upright part 3 5 is connected to one end of the buffer (first) capacitor 8 which is the largest component in the module, and the lead-out terminal 3 2 from the other side is also connected to the right-angled angle via the right-angled upright neck 36. The conductor rod of a bent conductor plate. Here, the conductor plate 37 is placed so that one end 10 of the buffer diode 10 is connected, and the other end 10 of the diode 10 is connected with a lead 39, and is connected in a paste-like manner to The other end of the snubber capacitor 8 is a conductor plate 38. Furthermore, a CR buffer 2 2 buffer (second) capacitor 18 and a resistor are arranged on the same plane of the connection between the buffer diode 10 and the buffer diode 10, and the Chinese paper standard (CNS) A4 specification (210 X 297 male *) -8- A7 407362 _______B7 V. Description of the invention) Device 2 0. That is, the anode terminal 10 of the buffer diode 10 is connected to the conductive plate 37, and one terminal 18 of the capacitor 18 is connected to the conductive plate 37. The other end of the capacitor 18 is connected to one end of the resistor 20. The other end of the resistor 20 is connected to the other end 103 of the diode 10 above. The other ends 102 and 103 of the diode 10 are connected internally. These are integrally molded with resin to constitute the bumper assembly 6. According to the diodes 10 located on approximately the same plane, the second capacitor 18 and the resistor 20 are aligned close to the buffer (first) capacitor 8 and the buffer (first) capacitor 8 and the conductor plate 37 is configured to be supported by '7, and is again configured by the buffer (first) capacitor 8 and I GBT 1. As a result, the CD buffer and the CR buffer are integrally molded and housed in the same package, so that the degree of freedom in the configuration of the CR buffer can be increased. As shown in FIG. 2, wiring in a very small space It is possible that the current loop of the CD buffer can be stored in a very small space, so that the inductance of the wiring can be suppressed to a very small value. Furthermore, the direction of the current flowing in the CR buffer and the resistance is opposite to the direction of the current flowing in the conductor plate 37, so as to cancel the magnetic flux of the wiring, and the inductance of the wiring is further suppressed to a small value. The jump voltage and vibration caused by the recovery of the diode can be controlled very effectively. As a result, the wiring length of the capacitor 8 and the diode 10 connected to the CD buffer of the GBT 1 can be shortened, and the wiring length of the CR retarder connected to the diode can be shortened to that of the prior art. 'The connection between the two lead-out terminals 1 4 and 3 1 which are led out of the CD buffer * 1' · J ------------ install ---- II order · 1! 1 — !! (Please read the notes on the back before filling in this page) The printed paper size of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) -9-407362 B: _ 5 、 Explanation 6) (Please read the note on the back first and then fill out this page> The method of CR buffer 2 2 can be significantly shortened when compared, so that the inductance of the wiring can be extremely small. It can also suppress the above-mentioned vibration voltage caused by the recovery of the diode. Figure 3 is a IGBT current used to illustrate the effect of an embodiment of the present invention. The voltage characteristic diagram. The same figure (a) is a user, When the CR buffer 2 2 or 2 3 is attached to the outside, the voltage between the collector and the emitter VCD of the IGBT as shown by the circled part 41 in the figure oscillates. The same figure (b) The characteristics of one embodiment of the invention when the CR buffers 22 or 23 are integrally molded in the buffer components 6 and 7. And the IGBT collector as shown by the circled part 4 2 • The vibration between the emitter voltages V and D is suppressed to a small value. The following describes this with reference to FIGS. 4 to 6. The second embodiment of the invention. Fig. 4 is a circuit diagram of a power conversion device corresponding to the other embodiment of the invention of Fig. 1. The same components as those in Fig. 1 are marked with the same reference numerals to omit their descriptions. In this embodiment, , CD buffer 8, 10 or 1 1 * Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 13 and the second capacitor 18 or 19 of the CD buffer 2 2 or 23 is integrated into one The inside of the buffer assembly 61 or 71, and the resistor 20 or 21 in the CR buffer 22 or 23 is disposed outside the assembly. FIG. 5 corresponds to another implementation of the present invention of FIG. 2 For example, a perspective view of a photo arm of a power conversion device, FIG. 5 is a view seen from the arrow V 1 direction of FIG. 5. In the buffer assembly 61, it is located on the same plane as the buffer diode 10. The ground connection is equipped with a CR buffer 2 2 buffer (second) electric paper & degree applicable to China National Standard (CNS) A4 specifications (210 * 297 cm) -10- B7 407362 V. Description of the invention §) Valley 1 8. However, the resistors are led out of the module by the lead wires 4 1 and 4 2 of the module 6 1. It is arranged near the 1 side of the component 6. According to the two diodes 10 located on the substantially same plane, the second capacitor 18 is aligned with the conductor plate shape of the buffer lead-out terminal between the buffer (first) capacitor 8 and the I GBT component 30, These diodes 10, the second capacitor 18, and the externally attached resistor 20 are held in the buffer (first) capacitor 8 and the I GBT module 30. This result is similar to that of the above embodiment, and it is possible to sufficiently suppress the vibration voltage caused by the recovery of the diode. Since the heat generated by the resistor 20 is not easily transmitted to the buffer component 6 1, the resistor can be suppressed. The temperature rise of the buffer unit 61 caused by the temperature rise of 20. In the above-mentioned embodiment, the buffer of the positive-side self-extinguishing arc extinguishing element 1 of the converter is taken as an example for explanation. However, when the negative-side self-extinguishing arc extinguishing element 2 is used, only the polarity is replaced, and the other is the same. (Effects of the Invention) According to the present invention, the CR buffer can be fixed by using the molding of the CD buffer package. Therefore, the degree of freedom of the CR buffer can be increased, and it can be close to the diode of the CR buffer. It is configured so that the inductance of the CR buffer circuit must be kept to a minimum, so that it can effectively suppress the jump voltage or vibration caused by the recovery of the buffer diode, so it can suppress the occurrence of noise. For external equipment The suppression of malfunction can be effective in reducing the cost of the noise filter. < Please read the precautions on the back before filling this page) Install I · 1 t 1 I ^ eJ * 1 · _1 1 it t— I-line printing and printing of employee cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ This paper size applies to China National Standard (CNS) A4 Specification (210 X 297 Gong) -11-Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Printed by the Consumers' Cooperative 407362 V. Description of Invention 6) When the CR buffer resistor is externally installed outside the module, it can be suppressed The temperature of the module also rises. Brief Description of the Drawings Fig. 1 is a circuit diagram of a power conversion device according to an embodiment of the present invention. Fig. 2 is a perspective view showing the structure of a photo arm, which is a power conversion device according to an embodiment of the present invention. Fig. 3 is a voltage-current characteristic diagram of a semiconductor device showing the effects of an embodiment of the present invention. Fig. 4 is a circuit diagram of a power conversion device diagram according to another embodiment of the present invention. Fig. 5 is a perspective view showing a structure of a photo arm according to a power conversion device diagram of another embodiment of the present invention. Figure 6 is a view from the arrow of Figure 5 in the direction of v1. (Symbol description) 1.2 IGBT (semiconductor self-extinguishing element) 3, 4 DC terminal of power conversion device 5 Wiring inductance 6, 61, 7 Snubber assembly 8, 9 CD snubber capacitor 10, 11 CD snubber diode 14, 15 , 31, 32 lead-out terminal This paper size is applicable to Chinese National Standard (CKS) Al specification (210 X 297 mm) 12 I .------ I 11 --- ^ ---- ίιΓ, ι ^ -l ·! · (Please read the precautions on the back before filling in this page) 407362 A7 B7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economy V. Invention Description $ 〇) 16,17 Discharge resistor 18,19 CR Snubber capacitor 20 , 21 CR snubber resistor 22,23 CR snubber 24 to 26 Phases of power conversion device 27-29 AC terminal of power conversion device 30 IGBT module 34, 37, 38 Conductor plate 39 Lead 41, 42 Resistor 2 0 Lead '一'. H ψ— I ^ Mw nn Λ II ^ 1 ^ 1 ^ 1 I i 1 m_l one 0, ^ 1 ^ 1 ^ 1 ^ 1 ^ 1 \ (Please read the precautions on the back before filling this page ) This paper size applies to China National Standard (CNS) A4 (210 * 297 mm) ) -13-