TW413395U - Support boat for object to be processed - Google Patents

Support boat for object to be processed

Info

Publication number
TW413395U
TW413395U TW088201413U TW88201413U TW413395U TW 413395 U TW413395 U TW 413395U TW 088201413 U TW088201413 U TW 088201413U TW 88201413 U TW88201413 U TW 88201413U TW 413395 U TW413395 U TW 413395U
Authority
TW
Taiwan
Prior art keywords
processed
support boat
boat
support
Prior art date
Application number
TW088201413U
Other languages
English (en)
Inventor
Katsuo Nishi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW413395U publication Critical patent/TW413395U/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H10P72/127—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterised by the substrate support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW088201413U 1995-05-31 1996-05-30 Support boat for object to be processed TW413395U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15675195A JP3218164B2 (ja) 1995-05-31 1995-05-31 被処理体の支持ボート、熱処理装置及び熱処理方法

Publications (1)

Publication Number Publication Date
TW413395U true TW413395U (en) 2000-11-21

Family

ID=15634528

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088201413U TW413395U (en) 1995-05-31 1996-05-30 Support boat for object to be processed

Country Status (4)

Country Link
US (1) US5897311A (zh)
JP (1) JP3218164B2 (zh)
KR (1) KR100395994B1 (zh)
TW (1) TW413395U (zh)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
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TW489827U (en) * 1998-04-09 2002-06-01 Kobe Steel Ltd Apparatus for high-temperature and high-pressure treatment of semiconductor substrates
US6171400B1 (en) 1998-10-02 2001-01-09 Union Oil Company Of California Vertical semiconductor wafer carrier
NL1012004C2 (nl) 1999-05-07 2000-11-13 Asm Int Werkwijze voor het verplaatsen van wafers alsmede ring.
US6099645A (en) * 1999-07-09 2000-08-08 Union Oil Company Of California Vertical semiconductor wafer carrier with slats
EP1072693A1 (en) * 1999-07-27 2001-01-31 Iljin Nanotech Co., Ltd. Chemical vapor deposition apparatus and method of synthesizing carbon nanotubes using the apparatus
DE10010694A1 (de) * 2000-03-04 2001-09-06 Roche Diagnostics Gmbh Blutlanzette mit hygienischen Spitzenschutz
US6287112B1 (en) * 2000-03-30 2001-09-11 Asm International, N.V. Wafer boat
KR100379476B1 (ko) * 2000-09-07 2003-04-10 엘지전자 주식회사 모세관을 이용한 탄소나노튜브의 성장방법
US7431585B2 (en) * 2002-01-24 2008-10-07 Applied Materials, Inc. Apparatus and method for heating substrates
US6835039B2 (en) * 2002-03-15 2004-12-28 Asm International N.V. Method and apparatus for batch processing of wafers in a furnace
US7104578B2 (en) * 2002-03-15 2006-09-12 Asm International N.V. Two level end effector
US20030233977A1 (en) * 2002-06-20 2003-12-25 Yeshwanth Narendar Method for forming semiconductor processing components
US7256375B2 (en) * 2002-08-30 2007-08-14 Asm International N.V. Susceptor plate for high temperature heat treatment
US6799940B2 (en) 2002-12-05 2004-10-05 Tokyo Electron Limited Removable semiconductor wafer susceptor
US7033126B2 (en) * 2003-04-02 2006-04-25 Asm International N.V. Method and apparatus for loading a batch of wafers into a wafer boat
US6825123B2 (en) * 2003-04-15 2004-11-30 Saint-Goban Ceramics & Plastics, Inc. Method for treating semiconductor processing components and components formed thereby
US7749196B2 (en) * 2003-07-02 2010-07-06 Cook Incorporated Small gauge needle catheterization apparatus
US7181132B2 (en) 2003-08-20 2007-02-20 Asm International N.V. Method and system for loading substrate supports into a substrate holder
US7727588B2 (en) * 2003-09-05 2010-06-01 Yield Engineering Systems, Inc. Apparatus for the efficient coating of substrates
US20050145584A1 (en) * 2004-01-06 2005-07-07 Buckley Richard F. Wafer boat with interference fit wafer supports
US7501370B2 (en) 2004-01-06 2009-03-10 Saint-Gobain Ceramics & Plastics, Inc. High purity silicon carbide wafer boats
JP4503397B2 (ja) * 2004-08-26 2010-07-14 東京エレクトロン株式会社 縦型熱処理装置及びその処理容器急速降温方法
US20060065634A1 (en) * 2004-09-17 2006-03-30 Van Den Berg Jannes R Low temperature susceptor cleaning
JP2008028306A (ja) * 2006-07-25 2008-02-07 Hitachi Kokusai Electric Inc 熱処理装置
US7661544B2 (en) * 2007-02-01 2010-02-16 Tokyo Electron Limited Semiconductor wafer boat for batch processing
JP5090097B2 (ja) * 2007-07-26 2012-12-05 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
TWI421965B (zh) * 2007-12-20 2014-01-01 聖高拜陶器塑膠公司 處理半導體製程元件之方法及其形成之元件
USD616391S1 (en) * 2009-03-06 2010-05-25 Tokyo Electron Limited Pedestal of heat insulating cylinder for manufacturing semiconductor wafers
USD616394S1 (en) * 2009-03-06 2010-05-25 Tokyo Electron Limited Support of wafer boat for manufacturing semiconductor wafers
USD616395S1 (en) * 2009-03-11 2010-05-25 Tokyo Electron Limited Support of wafer boat for manufacturing semiconductor wafers
USD616396S1 (en) * 2009-03-12 2010-05-25 Tokyo Electron Limited Pedestal of heat insulating cylinder for manufacturing semiconductor wafers
CN101532125B (zh) * 2009-04-21 2011-05-11 四川师范大学 多温段同时退火的真空退火装置
US20110091700A1 (en) * 2009-10-20 2011-04-21 Saint-Gobain Ceramics & Plastics, Inc. Microelectronic processing component having a corrosion-resistant layer, microelectronic workpiece processing apparatus incorporating same, and method of forming an article having the corrosion-resistant layer
JP5545055B2 (ja) * 2010-06-15 2014-07-09 東京エレクトロン株式会社 支持体構造及び処理装置
US9644285B2 (en) 2011-08-22 2017-05-09 Soitec Direct liquid injection for halide vapor phase epitaxy systems and methods
USD720309S1 (en) * 2011-11-18 2014-12-30 Tokyo Electron Limited Inner tube for process tube for manufacturing semiconductor wafers
USD720308S1 (en) * 2011-11-18 2014-12-30 Tokyo Electron Limited Inner tube for process tube for manufacturing semiconductor wafers
USD724551S1 (en) * 2011-11-18 2015-03-17 Tokyo Electron Limited Inner tube for process tube for manufacturing semiconductor wafers
USD725053S1 (en) * 2011-11-18 2015-03-24 Tokyo Electron Limited Outer tube for process tube for manufacturing semiconductor wafers
FR2984923B1 (fr) * 2011-12-27 2014-11-07 Soitec Silicon On Insulator Systèmes de dépôt comprenant des chambres de réaction configurées pour réaliser des opérations de métrologie in situ et procédés connexes
USD763807S1 (en) * 2014-05-22 2016-08-16 Hzo, Inc. Boat for a deposition apparatus
JP5869960B2 (ja) * 2012-05-28 2016-02-24 東京エレクトロン株式会社 接合システム、接合方法、プログラム及びコンピュータ記憶媒体
JP5752639B2 (ja) * 2012-05-28 2015-07-22 東京エレクトロン株式会社 接合システム、接合方法、プログラム及びコンピュータ記憶媒体
JP5966649B2 (ja) * 2012-06-18 2016-08-10 東京エレクトロン株式会社 熱処理装置
US9530675B2 (en) * 2012-09-19 2016-12-27 Stmicroelectronics Pte Ltd Wafer handling station including cassette members with lateral wafer confining brackets and associated methods
TWD161688S (zh) * 2012-12-27 2014-07-11 日立國際電氣股份有限公司 半導體製造裝置用晶舟
TWD163542S (zh) * 2013-03-22 2014-10-11 日立國際電氣股份有限公司 基板處理裝置用晶舟
TWD166332S (zh) * 2013-03-22 2015-03-01 日立國際電氣股份有限公司 基板處理裝置用晶舟之部分
TWD165429S (zh) * 2013-07-29 2015-01-11 日立國際電氣股份有限公司 半導體製造裝置用晶舟
TWD167988S (zh) * 2013-07-29 2015-05-21 日立國際電氣股份有限公司 半導體製造裝置用晶舟
TWD168827S (zh) * 2013-07-29 2015-07-01 日立國際電氣股份有限公司 半導體製造裝置用晶舟
USD748594S1 (en) * 2014-03-12 2016-02-02 Hitachi Kokusai Electric Inc. Reaction tube
USD742339S1 (en) * 2014-03-12 2015-11-03 Hitachi Kokusai Electric Inc. Reaction tube
KR20150110207A (ko) * 2014-03-24 2015-10-02 주식회사 테라세미콘 보트
JP1537313S (zh) * 2014-11-20 2015-11-09
JP1537630S (zh) * 2014-11-20 2015-11-09
JP1537312S (zh) * 2014-11-20 2015-11-09
JP1537629S (zh) * 2014-11-20 2015-11-09
CN104928649B (zh) * 2015-04-20 2017-12-05 中国科学院上海微系统与信息技术研究所 局域供碳装置及局域供碳制备晶圆级石墨烯单晶的方法
US10861727B2 (en) * 2018-03-13 2020-12-08 Samsung Electronics Co., Ltd. Segmented vertical wafer boat
KR20210044849A (ko) * 2018-09-20 2021-04-23 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
KR102782608B1 (ko) * 2019-10-14 2025-03-14 삼성전자주식회사 반도체 제조 장비
TW202326906A (zh) * 2021-11-02 2023-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體基板處理設備
KR102764904B1 (ko) 2021-12-31 2025-02-11 한화정밀기계 주식회사 다단 히터를 구비한 박막 증착 장치 및 이를 이용한 박막 증착 방법
TW202514846A (zh) * 2023-06-14 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於處理複數個基板之立式爐及處理方法
EP4498411A3 (en) * 2023-06-28 2025-03-26 ASM IP Holding B.V. Wafer boat system, holder ring and use thereof
TWI911672B (zh) * 2024-03-13 2026-01-11 力晶積成電子製造股份有限公司 晶圓承載裝置

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JPS6092826A (ja) * 1983-10-26 1985-05-24 Shin Kobe Electric Mach Co Ltd 圧空成形法
DE8801785U1 (de) * 1988-02-11 1988-11-10 Söhlbrand, Heinrich, Dr. Dipl.-Chem., 8027 Neuried Vorrichtung zur Temperaturbehandlung von Halbleitermaterialien
US5249960A (en) * 1991-06-14 1993-10-05 Tokyo Electron Sagami Kabushiki Kaisha Forced cooling apparatus for heat treatment apparatus
JP3234617B2 (ja) * 1991-12-16 2001-12-04 東京エレクトロン株式会社 熱処理装置用基板支持具
KR100260120B1 (ko) * 1993-09-30 2000-07-01 마쓰바 구니유키 열처리 장치
JPH07254591A (ja) * 1994-03-16 1995-10-03 Toshiba Corp 熱処理装置

Also Published As

Publication number Publication date
US5897311A (en) 1999-04-27
JPH08330318A (ja) 1996-12-13
JP3218164B2 (ja) 2001-10-15
KR100395994B1 (ko) 2004-02-14
KR960043040A (ko) 1996-12-21

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Legal Events

Date Code Title Description
GD4K Issue of patent certificate for granted utility model filed before june 30, 2004
MM4K Annulment or lapse of a utility model due to non-payment of fees