五、發明說明（1) --------- hase本=係有巧於—種衰減式相位移光罩(atte_ted 2 m APSM)的製作方法，尤指一種能避免 重複曝光效應的衰減式相位移光罩之製作方法。 实/ 2體晶片上的圖案更小更精確，用來制定半 導m圖案的光罩也隨之進步^近來，t罩技術已 經開發出一種衰減式相位移光罩（APSM) ^ APSM上的表面主要分成兩種區域，完全透光區以及衰 減透光區，完全透光區的透光度接近1〇〇%，而衰減透光區 域的透光度則比完全透光區的透光度小非常的多，可能不 到10%，而且光穿過衰減透光區後的相位會與光穿過完全 透光，後的相位相反。完全透光區多半是以石英玻璃所構 成’农減透光區上則是多加上一層i⑽層β正因為於進 行曝光時有兩種不同相位的光，所以在半導體晶片上相對 於完全透光區以及衰減透光區的交界處會有光強度等於零 的地方產生。也就是說，半導體晶片上相對於完全透光區 與衰減透光區的區域能夠區別的更為清楚，因此，可以增 進曝光製程的解析度。 然而’曝光機台（即步進機）的執行過程是將APSM上的 圖案依序的形成在半導體晶片上，使半導體晶片上看起來 有複數個排列成矩陣之APSM上的圖案。如果，APSM僅僅是 由完全透光區以及衰減透光區所構成，則半導體晶片上每 兩個APSM上圖案的交界處，不應該顯影的地方，於曝光時 就會承受到兩倍衰減透光區域所造成的曝光量，大約為 20% β這種現象在四個APSM上圖案的交界處（切割道交會V. Description of the invention (1) --------- hase this = is a coincidence — a method of making an attenuated phase shift mask (atte_ted 2 m APSM), especially a method that can avoid repeated exposure effects Manufacturing method of attenuated phase shift mask. The pattern on real / two-body wafers is smaller and more accurate, and the mask used to formulate the semiconducting m-pattern has also progressed. Recently, t-mask technology has developed an attenuation phase shift mask (APSM). The surface is mainly divided into two areas, the fully transparent area and the attenuated transparent area. The transmittance of the fully transparent area is close to 100%, and the transmittance of the attenuated transparent area is greater than that of the fully transparent area. It is very small, maybe less than 10%, and the phase of the light after passing through the attenuation transmission area will be opposite to that of the light after passing through the full transmission. The fully transparent area is mostly composed of quartz glass. On the agricultural subtraction transparent area, an additional layer of i⑽ is added. Because of the two different phases of light during exposure, it is relatively transparent on the semiconductor wafer. There will be places where the light intensity is equal to zero at the boundary of the area and the attenuation transmission area. That is to say, the area on the semiconductor wafer relative to the fully transparent area and the attenuated transparent area can be more clearly distinguished, so the resolution of the exposure process can be increased. However, the execution process of the 'exposure machine (ie stepper) is to sequentially form the patterns on the APSM on the semiconductor wafer, so that the semiconductor wafer looks like a plurality of patterns on the APSM arranged in a matrix. If the APSM is only composed of a fully transparent area and an attenuated light transmission area, the junction of the pattern on every two APSMs on the semiconductor wafer, which should not be developed, will be subjected to double attenuation light transmission during exposure. The amount of exposure caused by the area is about 20% β This phenomenon occurs at the junction of the patterns on the four APSM
五、發明說明（3) 形成一相位移層、一遮光層以及一光阻層。接著進行一第 一曝光顯影製程，去除一第一預定區域中之該光阻層β然* 後進行一第一餘刻製程，去除該第一預疋區域中之該相位_ 移廣以及該遮光層。跟著進行一第二曝光顯影製程，以紫 外光（DV)為光源，對該光阻層曝光，以去除一第二預定區 域中之該光阻層。然後進行一第二钱刻製程，去除第二預 定區域中之該遮光層。最後進行一去光阻製裎，以去除該 光阻層。 ~ 本發明之優點在於僅僅需要一層光阻層便可以製作出 帶有不透光區域之APSM，製程非常簡便。而且，本發明以 紫外光（UV)為光源對該光阻層進行大面積之曝光並不是 以電子束寫入的方式進行曝光，所以曝光時間可以大幅 短，大幅的節省成本。 ' 為使本發明之上述目的、特徵和優點能更明顯易僅， 下文特舉-較佳實施例，並配合所附圖式，作詳細說明如 圖式之簡單說明：5. Description of the invention (3) Forming a phase shift layer, a light shielding layer and a photoresist layer. Next, a first exposure and development process is performed to remove the photoresist layer β in a first predetermined area, and then a first remaining process is performed to remove the phase_shift and the light-shielding in the first preliminary area. Floor. Then, a second exposure and development process is performed, and the photoresist layer is exposed using ultraviolet light (DV) as a light source to remove the photoresist layer in a second predetermined area. Then, a second etching process is performed to remove the light-shielding layer in the second predetermined area. Finally, a photoresist removal process is performed to remove the photoresist layer. ~ The advantage of the present invention is that APSM with opaque areas can be made with only one photoresist layer, and the manufacturing process is very simple. In addition, in the present invention, a large area of the photoresist layer is exposed by using ultraviolet light (UV) as a light source, and the exposure is not performed by electron beam writing, so the exposure time can be greatly shortened, and the cost can be greatly saved. '' In order to make the above-mentioned objects, features, and advantages of the present invention more obvious and easy, only the preferred embodiments are given below, and in conjunction with the accompanying drawings, a detailed description is given as a simple description of the drawings:
至圖&進行本發明之衰減式相位移光罩 (^PSM)的製作方法時的光罩剖 符號說明： 丁思W ^預定區域 10〜基板12相位移層； 14~遮光層16光阻層； 18~第一預定區域2〇第 22〜葉片。 "4 17042 五、發明說明（4) 實施例： 奋迠iff 圖至第7圖’第1圖至第7圖為進行本發明之 衣減式相位移光罩（ApSM)的製作方法時的光罩剖面示意 圖。 如第1、圖所示β本發明提供了一種衰減式相位移光罩 的製作方法，適用於一基板10。本發明之製作方法首先於 基板10上依序形成一相位移層12 '一遮光層14以及一光阻 層16譬如說，基板10以石英玻璃所構成。相位移層以 MoSiON所構成。遮光層14係以鉻所構成。如果基板1〇的透 光率定為100% ,則相位移層12的透光率約為3~8%，遮光層 14的透光率約等於零。 接著進行進行一第一曝光顯影製程’去除第一預定區 域18中之光阻層16 ’如第2圖所示。譬如說，以電子束為 曝光光源，於光阻層16上寫出希望的圖案，也就是使第一 預定區域18中的光阻層曝光。然後進行顯影，將第一預定 區域中的光阻層去除，如第2圖所示。 跟著進行一第一蝕刻製程，去除第一預定區域18中之 遮光層14以及相位移層12 ’如第3圖以及第4圖所示。譬如 說’先進行一溼蝕刻製程’以去除光阻層16未覆蓋處下之 遮光層14，如第3圖所示。然後進行一乾蝕刻製程，以去 除光阻層16未覆蓋處下之相位移層12，如第4圖所示。因 此’在第一預定區域18中，遮光層14以及相位移層12均被 去除了，只剩下基底1 0。 五、發明說明（5) 接著進行一第二曝光顯影製程，以紫外光（UV)為光 源，對光阻層16曝光，以去除第二預定區域2 0中之光阻層* 16，如第 5 圖所示。於 Kenji,·. "Ultra-Fine Mask Cleaning techno logy using Ultra-Violet Irradiation” Photo-mask Japan pp. 447-454, 1 998 中描 述，低壓水銀燈所產生的紫外光可以去除掉物體表面的有 機層（organ ic layer)，即光阻層，也描述了紫外光分解 了有機層中的鍵結。換言之，紫外光可以分解光阻層16， 降低光阻層16的厚度，甚至去除掉光阻層16。因此，本發 明中之第二曝光顯影製程可以用複數之葉片（blade) 22做 為擋版，以遮住該光阻層16不欲曝光之區域，然後對第二 預定區域20進行曝光。如第5A圖所示。葉片22可以製作為 活動式，就像照相機的光圈一樣，可以調整第二預定區域 20之大小，如第5B圖所示。 第二曝光顯影製程於進行曝光時可以通入臭氧（〇3)， 利用臭氧加速光阻層1 6的分解’達到去除光阻層丨6的目 的。第二曝光顯影數程可以包含一曝光製程以及一顯影製 程。曝光製程先以紫外光對第二預定區域2〇進行曝光，使 第二預定區域20中的光阻層16產生化學變化；接著進行一 顯影製程，以一顯影液去除第二預定區域2〇中之光阻層 '6。曝光製程不一定要完全的去除掉第二預定區域2〇中的 ，阻層16，如果曝光製程僅僅是減少了第二預定區域中的 光阻層厚度，沒有完全去除，則可以接著進行一氧電紫製 程，以去除第二預定區域2 0中之光阻層16，而沒有曝光到To Figure & Description of Photomask Cutout Symbols When Making the Attenuation Phase Shift Mask (^ PSM) of the Present Invention: Ding Si W ^ Predetermined Area 10 ~ 12 Phase Displacement Layer of the Substrate; 14 ~ Light Blocking Layer 16 Photoresist Layer; 18 ~ first predetermined area 20th ~ 22nd blade. " 4 17042 V. Description of the invention (4) Example: Fendi iff diagrams to FIG. 7 'FIGS. 1 to 7 are for the method of manufacturing the clothes-reducing phase shift mask (ApSM) of the present invention Schematic sketch of photomask. As shown in Fig. 1 and Fig. 1, the present invention provides a manufacturing method of an attenuation phase shift mask, which is suitable for a substrate 10. In the manufacturing method of the present invention, a phase shift layer 12 ', a light-shielding layer 14 and a photoresist layer 16 are sequentially formed on the substrate 10, for example, the substrate 10 is made of quartz glass. The phase shift layer is made of MoSiON. The light-shielding layer 14 is made of chromium. If the light transmittance of the substrate 10 is set to 100%, the light transmittance of the phase shift layer 12 is approximately 3 to 8%, and the light transmittance of the light shielding layer 14 is approximately equal to zero. Then, a first exposure development process is performed to remove the photoresist layer 16 'in the first predetermined area 18 as shown in FIG. For example, an electron beam is used as an exposure light source, and a desired pattern is written on the photoresist layer 16, that is, the photoresist layer in the first predetermined region 18 is exposed. Then, development is performed to remove the photoresist layer in the first predetermined area, as shown in FIG. 2. Following a first etching process, the light-shielding layer 14 and the phase shift layer 12 ′ in the first predetermined region 18 are removed, as shown in FIGS. 3 and 4. For example, "wet a wet etching process first" to remove the light-shielding layer 14 under the photoresist layer 16 which is not covered, as shown in FIG. Then, a dry etching process is performed to remove the phase shift layer 12 underneath the photoresist layer 16, as shown in FIG. 4. Therefore, in the first predetermined region 18, both the light shielding layer 14 and the phase shift layer 12 are removed, leaving only the substrate 10. V. Description of the invention (5) Next, a second exposure development process is performed, using ultraviolet light (UV) as a light source, to expose the photoresist layer 16 to remove the photoresist layer * 16 in the second predetermined area 20, as in the first 5 Figure. As described in Kenji, ·. &Quot; Ultra-Fine Mask Cleaning techno logy using Ultra-Violet Irradiation "Photo-mask Japan pp. 447-454, 1 998, the ultraviolet light generated by low-pressure mercury lamps can remove the organic layer on the surface of objects (Organic ic layer), that is, the photoresist layer, also describes that ultraviolet light decomposes the bonds in the organic layer. In other words, the ultraviolet light can decompose the photoresist layer 16, reduce the thickness of the photoresist layer 16, and even remove the photoresist layer. 16. Therefore, in the second exposure and development process of the present invention, a plurality of blades 22 can be used as a mask to cover the area of the photoresist layer 16 that is not to be exposed, and then the second predetermined area 20 is exposed As shown in Figure 5A. The blade 22 can be made movable, just like the aperture of a camera, and the size of the second predetermined area 20 can be adjusted, as shown in Figure 5B. The second exposure development process can be performed during exposure. Pass in ozone (〇3), use ozone to accelerate the decomposition of the photoresist layer 16 to achieve the purpose of removing the photoresist layer. The second exposure and development process may include an exposure process and a development process. First, the second predetermined region 20 is exposed with ultraviolet light to chemically change the photoresist layer 16 in the second predetermined region 20; then, a developing process is performed to remove the light in the second predetermined region 20 with a developing solution. Resist layer '6. It is not necessary to completely remove the resist layer 16 in the second predetermined area 20 during the exposure process. If the exposure process only reduces the thickness of the photoresist layer in the second predetermined area and is not completely removed, then An oxygen electro-violet process may be performed next to remove the photoresist layer 16 in the second predetermined area 20 without being exposed to
4170^2 五、發明說明（6) 的區域則會保留有一定厚度的光阻層16。 然後進行—第二蝕刻製程’去除第二預定區域20中之 遮光層14 ’如第6圖所示。譬如說’以一溼钱刻製程去除^ 第二預定區域2 0中之遮光層14。而APSM之邊緣區域便留下 了遮光層14，而遮光層14所在的區域便是不透光區域’如 第6圖所示。用以防止進行微影製程時，產生雙重曝光的 現象。 最後進行一去光阻製程，以去除光阻層16，如第7圖 所示。譬如說，以一氧電漿製程將光阻層16氧化掉，完全 除去基底10上的光阻層。這便完成了帶有不透光區域之 APSM的製作，如第7圖所示。 總而言之’本發明以紫外光來定義不透光區域β有下 列優點： 1. 紫外光的光源容易獲得··一般的半導體製程中往往 就有用紫外光進行烘烤的動作，所以光源不成問題^ 2. 成本低廉：製作不同的apsm時，只要調整活動式葉 片中間的曝光區域便可以控制不透光區域的面積大小。而 且’第二曝光顯影時’是以υν光對整個”㈣進行大面積曝 光，所以可以很快速的完成曝光的需求。 相較於習知的帶有不透光區域之ApSM的製作方法，本（ 發明利用UV光來取代電子束，以定義不透光區域的圖案。 ，此，本發明之製作方法能大幅的降低製程時間以及製作 成本’提高光罩製作的競爭力。 本發明雖以一較佳實施例揭露如上’然其並非用以限4170 ^ 2 5. In the region of (6), a photoresist layer 16 with a certain thickness will remain. Then, a second etching process is performed to remove the light shielding layer 14 ′ in the second predetermined region 20 as shown in FIG. 6. For example, 'the light-shielding layer 14 in the second predetermined region 20 is removed using a wet-money engraving process. The light shielding layer 14 is left in the edge area of the APSM, and the area where the light shielding layer 14 is located is an opaque area 'as shown in FIG. It is used to prevent double exposure during the lithography process. Finally, a photoresist removal process is performed to remove the photoresist layer 16, as shown in FIG. For example, the photoresist layer 16 is oxidized in an oxygen plasma process to completely remove the photoresist layer on the substrate 10. This completes the production of APSM with opaque areas, as shown in Figure 7. All in all, the present invention defines the opaque area β with ultraviolet light. The following advantages are provided: 1. Ultraviolet light source is easy to obtain ... In the general semiconductor manufacturing process, ultraviolet light is often used for baking, so the light source is not a problem. ^ 2 Low cost: When making different apsm, just adjust the exposure area in the middle of the movable blade to control the area of the opaque area. Moreover, during the “second exposure development”, a large area of the entire “曝光” is exposed with νν light, so the exposure requirement can be completed very quickly. Compared with the conventional method of manufacturing ApSM with opaque areas, this (The invention uses UV light to replace the electron beam to define the pattern of the opaque area. Therefore, the manufacturing method of the present invention can greatly reduce the process time and manufacturing cost, and 'improve the competitiveness of photomask manufacturing. Although the present invention The preferred embodiment is disclosed above, but it is not intended to be limited.
第9頁 五、發明說明（7) 定本發明，任何熟習此項技藝者，在不脫離本發明之精神 和範圍内，當可做些許的更動與濶飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。5. Explanation of the invention (7) Defining the present invention. Any person skilled in the art can make some changes and decorations without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be considered The attached application patent shall prevail.
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