TW425664B - Forming method for junction contact structure - Google Patents
Forming method for junction contact structure Download PDFInfo
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- TW425664B TW425664B TW87119511A TW87119511A TW425664B TW 425664 B TW425664 B TW 425664B TW 87119511 A TW87119511 A TW 87119511A TW 87119511 A TW87119511 A TW 87119511A TW 425664 B TW425664 B TW 425664B
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000004140 cleaning Methods 0.000 claims abstract description 54
- 239000004020 conductor Substances 0.000 claims abstract description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 150000002978 peroxides Chemical class 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 16
- 238000005406 washing Methods 0.000 claims description 14
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 4
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000004576 sand Substances 0.000 claims 1
- 239000009600 shenyin Substances 0.000 claims 1
- 238000005245 sintering Methods 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 abstract description 3
- 230000001590 oxidative effect Effects 0.000 abstract description 3
- 229920005591 polysilicon Polymers 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- HALQELOKLVRWRI-VDBOFHIQSA-N doxycycline hyclate Chemical compound O.[Cl-].[Cl-].CCO.O=C1C2=C(O)C=CC=C2[C@H](C)[C@@H]2C1=C(O)[C@]1(O)C(=O)C(C(N)=O)=C(O)[C@@H]([NH+](C)C)[C@@H]1[C@H]2O.O=C1C2=C(O)C=CC=C2[C@H](C)[C@@H]2C1=C(O)[C@]1(O)C(=O)C(C(N)=O)=C(O)[C@@H]([NH+](C)C)[C@@H]1[C@H]2O HALQELOKLVRWRI-VDBOFHIQSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000011257 shell material Substances 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
425664 五、發明說明（υ 發明領域 本案係為一種接點接觸結構形成方法，尤指一種半導體元 件之製造過程中之接點接觸結構形成方法。 發明背景 在半導體元件之特性中’接面漏電（Juncti〇n leakage)* 對於7C件性能表現有相當折損之現象，特別是在造成動態 隨機存取記憶體（DRAM)之資料維持時間（data retension time)太鈕之負面影響。而在元件積集度要求曰益增加’ 疋件面積相對縮小之同時，如何維持甚至增加動態隨機存 取記憶體（DRAM)中電容元件之電容量，以及減少接面漏電 現象所造成之遺漏電流（leakage current)，實為動態隨 機存取記憶體（DRAM)製造業者之一重要課題。 請參見第一圖，其係電容器節點1〇(CapacU〇r N〇de) 以及位το線1KBit Line)，以經摻雜之多晶矽導體層來做 為接觸導通之示意圖中當用以讓經摻雜之多晶矽導體 層通過之開孔12於介電層13形成後，習用方式係於進行一 DHFOUute Hydr〇gen Floride )清洗步驟 金氧半電晶體元件（NM0S)之源（沒）極區14之表面141上所 可能殘留之雜質後’再進行該經摻雜之多晶石夕導體層之成 長。 然而由於做為該N型金氧半電晶體元件⑽〇s)源（沒）425664 V. Description of the Invention (υ Field of the Invention The present invention relates to a method for forming a contact contact structure, particularly a method for forming a contact contact structure in the manufacturing process of a semiconductor device. BACKGROUND OF THE INVENTION Juncti〇n leakage) * There is a considerable loss in performance of 7C devices, especially in the negative impact of the data retension time of dynamic random access memory (DRAM). While increasing the requirements, the relative reduction in the area of the file, how to maintain or even increase the capacitance of the capacitive element in the dynamic random access memory (DRAM), and reduce the leakage current caused by the leakage of the interface, It is really an important issue for manufacturers of dynamic random access memory (DRAM). Please refer to the first figure, which is the capacitor node 10 (CapacU0r Node) and bit το line 1KBit Line) to be doped The polycrystalline silicon conductor layer is used as a contact for conducting. When the doped polycrystalline silicon conductor layer passes through the opening 12 formed in the dielectric layer 13 Afterwards, the conventional method is to perform a DHFOUute Hydrogen Floride cleaning step on the surface (141) of the source (none) electrode region 14 of the metal-oxide-semiconductor element (NMOS), and then perform the doping. The growth of polycrystalline slab conductor layers. However, as the source of the N-type metal-oxide-semiconductor element (0s) (not)
C:\ProgramFiIes\Patent\pdl571.ptd 第 4 頁 425664 年孑月 __案號871195】1 五、發明說明（2) 免丁 極區1 4之紐糝雜之矽基板，其滲雜濃度約為】〇18 (原子/立 方公分），而該經摻雜之多晶矽導體層之摻雜j度則 與1〇2°(原子/立方公分）’因此當經摻雜之多晶矽導體層',、 該開孔13中成長完成時，其中濃度較高之摻質將因擴二 應而透過該已被清洗乾淨之表面14ί進入該濃度較低之/ (汲）極區14，進而造成源（汲）極區Η之摻雜濃度增加，’田 而導致接面漏電（juncU〇n leakage)之現象趨向顯著 得所完成之動態隨機存取記憶體（DRAM)具有資料唯 ^ (data retens.on ^ ± ^ 用技術手段之缺失，並提供一實際技疋白 發展本案之一主要目的。 丁仅术違成，係為 發明概述 一本案係為一種接點接觸結構形成方法，應 70件之製造過程中，本方法包含下列步驟：二—乂導體 形成一開孔，用以露出該介電層下一經摻雜' 2電層上 過該開孔對於該經摻雜之矽基材進行一产哚 •材：透 程序中包含有提供一氧化劑進行作用之；驟；〗另該清洗 該開孔中形成一經摻雜之多晶矽導體層，用以 於 過該清洗程序之該經摻雜之矽基材。 要觸至進行 根據上述構想，接點接觸結構形 矽基材係為一N型金氧半電晶體元件(_ ’中=摻雜之 區。 彳、你〈及）極C: \ ProgramFiIes \ Patent \ pdl571.ptd Page 4 425664 January __Case No. 871195] 1 V. Description of the invention (2) The doped silicon substrate without the butt electrode region 14 has a doping concentration of about Is] 〇18 (atoms / cubic centimeter), and the doping degree of the doped polycrystalline silicon conductor layer is 10 ° (atomic / cubic centimeter) 'so when the doped polycrystalline silicon conductor layer', When the growth in the opening 13 is completed, the dopant with a higher concentration will pass through the cleaned surface 14 into the lower-concentrated / (drain) electrode region 14 due to the second expansion, thereby causing a source (drain) ) The doping concentration of ytterbium in the polar region increases, and the phenomenon of junction leakage caused by the field tends to be significant. The completed dynamic random access memory (DRAM) has data only ^ (data retens.on ^ ± ^ The lack of technical means, and provide a practical technique to develop one of the main purposes of this case. Ding Zhishu is a summary of the invention. This case is a method of forming a contact contact structure. It should be a 70-piece manufacturing process. In this method, the method includes the following steps: Two-the ytterbium conductor forms an opening for Out of the dielectric layer, the next doped '2 electrical layer passes through the openings to produce a dopant material for the doped silicon substrate: the penetration process includes the role of providing an oxidant; step; A doped polycrystalline silicon conductor layer is formed in the cleaning of the opening to pass through the cleaning process of the doped silicon substrate. To reach the above-mentioned concept, the contact-contact structure-shaped silicon substrate is An N-type metal-oxide-semiconductor element (_ 'in = doped region. 彳, you <and) pole
200(}' °8· 20. 〇〇5 425664 — ^ 89. 8. o r --塞复叫哑〜^7年4月幻R 格p V'- 五、發明說明（3) -f—^ -一-」—..... 根據上述構想’接點接觸結構形成方法中該經摻雜之 多晶矽導體層係用以做為該N型金氧半電晶體元件（nm〇s) 之源（汲）極區與電容器節點（Capacitor Node)或位元線 (Bit Line)接觸導通之用。 根據上述構想，接點接觸結構形成方法中該經摻雜之 矽基材與該經摻雜之多晶矽導體層之摻雜濃度分別約為 10〗8(原子/立方公分）以及1(p (原子/立方公分）。 根據上述構想，接點接觸結構形成方法中該清洗程序 係包含下列步驟：進行—HPMUydrogen chloride + Peroxide Mixture)清洗步驟，清洗時間約為1〇秒至1〇分 鐘之間。 根據上述構想’接點接觸結構形成方法中該清洗程序 係包含下列步驟：進行—APM(Amm〇ni⑽hydr〇xide +200 (} '° 8 · 20. 〇〇5 425664 — ^ 89. 8. or-Saifu called dumb ~ ^ April 7th magic R grid p V'- V. Description of the invention (3) -f- ^ -一-"—..... According to the above conception, the method of forming a contact contact structure, the doped polycrystalline silicon conductor layer is used as a source of the N-type metal-oxide-semiconductor element (nm〇s) The (drain) electrode region is used for conducting contact with a capacitor node or a bit line. According to the above concept, the doped silicon substrate and the doped silicon substrate in the method of forming a contact contact structure. The doping concentration of the polycrystalline silicon conductor layer is about 10, 8 (atoms / cubic centimeter) and 1 (p (atomic / cubic centimeter), respectively. According to the above idea, the cleaning procedure in the method of forming a contact contact structure includes the following steps: —HPMUydrogen chloride + Peroxide Mixture) cleaning step, the cleaning time is about 10 seconds to 10 minutes. According to the above conception, the method of forming a contact contact structure, the cleaning procedure includes the following steps: carry out-APM (Amm〇ni⑽hydr 〇xide +
Peroxide Mixture)清洗步驟’清洗時間約為1〇秒至1〇分 鐘之間。 ^根據上述構想’接點接觸結構形成方法中該清洗程序 係包含下列步驟：進行—spM(Sulfuric acid + Peroxide M i x t u r e )清洗步驟’清洗時間約為1 〇秒至丨〇分鐘之間。 ^ 根據上述構想’接點接觸結構形成方法中該清洗程序 係包含下列步驟：進行—DHF(Dilute Hydr〇gen F1〇ride) 清洗步驟；以及進行一HPM(Hydrogen Chloride +Peroxide Mixture) Washing Step 'The washing time is between about 10 seconds and 10 minutes. ^ According to the above conception, the cleaning procedure in the method for forming a contact contact structure includes the following steps: Performing a -spM (Sulfuric acid + Peroxide Mix) cleaning step 'The cleaning time is about 10 seconds to 10 minutes. ^ According to the above concept, the cleaning procedure in the method of forming a contact contact structure includes the following steps: performing a DHF (Dilute Hydrogen F1〇ride) cleaning step; and performing an HPM (Hydrogen Chloride +
Peroxide Mixture)清洗步驟，清洗時間約為1〇秒至1〇分 鐘之間。 根據上述構想，接點接觸結構形成方法中該清洗程序Peroxide Mixture) washing step, the washing time is about 10 seconds to 10 minutes. According to the above concept, the cleaning procedure in the method for forming a contact contact structure
第6頁 2000. 08.20,006 4256 6 4 五、發明說明（4) -- 係包含下列步驟：進行—DHF(Dilute Hydr〇gen n〇ride ) 凊洗步驟，以及進行一APM(Ammonium hydroxide + Peroxide Mixture)清洗步驟，清洗時間約為1〇秒至1〇分 鐘之間。 根據上述構想，接點接觸結構形成方法中該清洗程序 係包 3 下列步驟：進行一j)HF(Dilute Hydrogen Floride ) 清洗步驟’以及進行一 Sf>M(Sulfuric acid + Peroxide Mixture)清洗步驟，清洗時間約為1〇秒至1〇分鐘之間β 簡單圖式說明 本案得藉由下列圖式及詳細說明，俾得一更深入之了 解： 第一圖：其係電容器節點以及位元線以經摻雜之多晶矽導 體層來做為接觸導通之結構示意圖 第二圖：其係用以讓經摻雜之多晶矽導體層通過之開孔於 介電層形成後之結構示意圖。 本案圖式中所包含之各元件列禾如下： 電容器節點1 0 位元線1 1 開孔1 2 介電層1 3 源（>及）極區14 表面141 氧化矽薄層2 1Page 6 2000. 08.20,006 4256 6 4 V. Description of the invention (4)-The system includes the following steps: performing-DHF (Dilute Hydrogen n〇ride) washing step, and performing an APM (Ammonium hydroxide + Peroxide) Mixture) washing step, the washing time is about 10 seconds to 10 minutes. According to the above conception, the cleaning procedure in the method for forming a contact contact structure includes the following three steps: performing a j) HF (Dilute Hydrogen Floride) cleaning step 'and performing an Sf > M (Sulfuric acid + Peroxide Mixture) cleaning step, cleaning The time is about 10 seconds to 10 minutes. Β Simple diagram description This case can get a deeper understanding through the following diagram and detailed description: First picture: It is the capacitor node and the bit line in order to Schematic diagram of the structure of the doped polycrystalline silicon conductor layer for contact conduction. Figure 2 is a schematic diagram of the structure after the dielectric layer is formed to allow the doped polycrystalline silicon conductor layer to pass through the holes. The elements included in the scheme of this case are as follows: Capacitor node 10 Bit line 1 1 Opening 1 2 Dielectric layer 1 3 Source (&); Pole region 14 Surface 141 Thin silicon oxide layer 2 1
C:\Program Files\Patent\pdl571.ptd 第 7 頁 4 2566 4 五、發明說明（5) " ' -- 較佳實施例說明 請參見第二圖，其係用以讓經摻雜之多晶矽導體層通 過之開孔12於介電層13形成後之示意圖，本案較佳實施例 方法之特徵便為將習用方式所進行對於具有如第二圖所示 結構之晶片所進行之DHF(Dilute Hydr〇gen F1〇ride )清 洗步称加以改變，而以選自下列方法t之一來替代： (a) 進行一HPM(Hydrogen chloride + peroxide Mixture) 清洗步驟’清洗時間約為丨0秒至丨0分鐘之間β (b) 進行一APM(Ammonium hydroxide + Peroxide M i x t u r e )清洗步驟’清洗時間約為1 〇秒至1 〇分鐘之間s (c) 進行一SPM(Sulfuric acid + Peroxide Mixture)清洗 步驟，清洗時間約為1 0秒至1 〇分鐘之間。 (d) 進行一DHF(Dilute Hydrogen Floride )清洗步驟後， 再進行一 Η P M (H y d r 〇 g e n C h 1 〇 r i d e + P e r ο X i d e M i X t u r e) 清洗步驟*清洗時間約為1 〇秒至1 〇分鐘之間。 (e) 進行一DHF(Dilute Hydrogen Floride )清洗步驟； 後，再進行一ΑΡΜ(Αιηιηοηίιιιπ hydroxide + Peroxide Mixture)清洗步驟，清洗時間約為ι〇秒至ι〇分鐘之間。 (Ο 進行一DHF(Dilute Hydrogen Floride )清洗步驟； 後，再進行一SPM(Sulfuric acid + Peroxide Mixture) 清洗步驟，清洗時間約為1 0秒至1 〇分鐘之間。 而以上述清洗程序中任一程序來對該N型金氧半電晶C: \ Program Files \ Patent \ pdl571.ptd Page 7 4 2566 4 V. Description of the Invention (5) " '-For a description of the preferred embodiment, please refer to the second figure, which is used for doped polycrystalline silicon The schematic diagram of the opening 12 through the conductive layer after the dielectric layer 13 is formed. The feature of the method of the preferred embodiment of this case is that the DHF (Dilute Hydr) performed on the wafer with the structure shown in the second figure is performed in a conventional manner. 〇gen F1ride) The washing step is changed and replaced by one selected from the following methods: (a) Performing an HPM (Hydrogen chloride + peroxide Mixture) washing step. The washing time is about 0 seconds to 0. Β (b) An APM (Ammonium hydroxide + Peroxide Mix) cleaning step is performed between minutes. The cleaning time is about 10 seconds to 10 minutes. (C) An SPM (Sulfuric acid + Peroxide Mixture) cleaning step is performed. , The cleaning time is about 10 seconds to 10 minutes. (d) After performing a DHF (Dilute Hydrogen Floride) cleaning step, perform a PM (Hydr 〇gen C h 1 〇ride + Per ο X ide M i X ture) cleaning step * The cleaning time is about 1 〇 Seconds to 10 minutes. (e) Perform a DHF (Dilute Hydrogen Floride) cleaning step; after that, perform an APM (Αιηιηοηίιι hydroxide + Peroxide Mixture) cleaning step. The cleaning time is about ι0 seconds to ι0 minutes. (0) A DHF (Dilute Hydrogen Floride) cleaning step is performed; after that, an SPM (Sulfuric acid + Peroxide Mixture) cleaning step is performed, and the cleaning time is about 10 seconds to 10 minutes. In any of the above cleaning procedures, A program to the N-type metal-oxide semiconductor
C:\ProgramFiles\Patent\pdl571.ptd 第 8 頁 425664 .案號8711奶11 89.8. 修正 - 年β月·曰 五、發明說明（6) 體凡件（NMOS)之源（汲）極區14之表面141進行作用，除 了能將蝕刻開孔丨2所殘留之雜質去除外，尚以其中包含做 為氧化劑用途之過氧化氫（H202)將該源（汲）極區14之表面 141，處’作用成為一氧化矽（Si〇x)薄層21 ，而此薄層之厚 ，係隨清洗時間與源（汲）極區丨4之材質而有所變化，視 1要控制清洗時間以成長—適當厚度之氧化矽（s丨薄層 13ί ^有效地遏止當經摻雜之多晶矽導體層於該開孔 過該表面ill成進U度較高之摻質將因擴散效應所可能透 區"i:二度變^ 之現象趨=止接面漏電⑴心⑽ 憶體（DRAM)且右鲈复顯者使件所完成之動態隨機存取記 time)，徹底解半 之貝料維持時間（data retention 案之一主要目的。 用技術手段之缺失，達成發展本 創作本案得由孰習+ ϋ % 飾’然皆不脫如附申性φ技1之人士任施匠思而為諸般修 η月專利範圍所欲保護者。C: \ ProgramFiles \ Patent \ pdl571.ptd Page 8 425664. Case No. 8711 Milk 11 89.8. Amendment-Year β · Year V. Description of the Invention (6) Source (Drain) Pole Region 14 The surface 141 functions, in addition to removing impurities remaining in the etched openings 2 and the surface 141 of the source (drain) electrode region 14 containing hydrogen peroxide (H202) as an oxidant. 'It acts as a thin layer of silicon oxide (Si0x) 21, and the thickness of this thin layer varies with the cleaning time and the material of the source (drain) region, 4 depending on the control of the cleaning time to grow —Silicon oxide of appropriate thickness (thin thin layer 13) can effectively prevent the doped polycrystalline silicon conductor layer from passing through the surface to form a high degree of dopant through the surface. The dopant will be penetrated by the diffusion effect. ; i: the phenomenon of the second change ^ = the leakage of the interface, the heart, the memory (DRAM), and the dynamic random access time (completed by the player of the right bass), which completely halves the shell material maintenance time (One of the main purposes of the data retention case. The lack of technical means to achieve the development of this creation case must be studied + ϋ% The decoration is not as good as the person with the attached φ1 skill who can be repaired in various ways. Those who want to protect the patent scope.
第9頁 2000. 08. 20. 009 4256 6 4 二 _案號87119511 0年cP月十/日 修正 ：:v 圖式簡單說明 第一圖：其係電容器節點以及位元線以經摻雜之多晶矽導 體層來做為接觸導通之結構示意圖。 第二圖：其係用以讓經摻雜之多晶矽導體層通過之開孔於 介電層形成後之結構示意圖。Page 9 2000. 08. 20. 009 4256 6 4 2_Case No. 87119511 Revised on 10th / c of cP :: v The diagram briefly illustrates the first picture: it is the capacitor node and the bit line to be doped. A polysilicon conductor layer is used as a schematic diagram of contact conduction. Second figure: A schematic view of the structure of the dielectric layer after the openings for passing the doped polycrystalline silicon conductor layer through.
第10頁 2000.08. 20.012Page 10 2000.08. 20.012
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW87119511A TW425664B (en) | 1998-11-24 | 1998-11-24 | Forming method for junction contact structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW87119511A TW425664B (en) | 1998-11-24 | 1998-11-24 | Forming method for junction contact structure |
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| TW425664B true TW425664B (en) | 2001-03-11 |
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| TW87119511A TW425664B (en) | 1998-11-24 | 1998-11-24 | Forming method for junction contact structure |
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1998
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