TW432130B - Process for controlling thermal history of Czochralski-grown silicon - Google Patents

Process for controlling thermal history of Czochralski-grown silicon Download PDF

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Publication number
TW432130B
TW432130B TW086111381A TW86111381A TW432130B TW 432130 B TW432130 B TW 432130B TW 086111381 A TW086111381 A TW 086111381A TW 86111381 A TW86111381 A TW 86111381A TW 432130 B TW432130 B TW 432130B
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Taiwan
Prior art keywords
ingot
switch
rate
thermal history
pulling
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Application number
TW086111381A
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English (en)
Inventor
Harold W Korb
Sadasivam Chandrasekhar
Robert J Falster
Joseph C Holzer
Kyong-Min Kim
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Memc Electronic Materials
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Publication of TW432130B publication Critical patent/TW432130B/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Switch Cases, Indication, And Locking (AREA)

Description

M432130 六、申請專利範圍： 動開關用固定支架，可使一觸動開關設置在-電 該電磁開關包括有一上、下殼體’該下殼體内 接觸器及一熱動繼電器，且接續多數電線使 ^ Θ、熱動繼電器與觸動開關的接點組成為電連 接’该固定支架，包括： —上延伸部份，可連結該觸動開關； —下延伸部份，可固定於該下殼體；及 上延；連接部份，位於該上、下延伸部份之間，使該 由於，；二下延伸部份及轉折連接部份連接成為-體； si觸的接點組位置被提高，可有效增加配線 二間，且安裝便利，可縮短組立工時。 2中如申請專利範圍g !項所述之觸動 盆 二訂殼體的内壁面設有-插座可用以接納該ΐ:伸部 中二圍、第2項所述之觸動開關用固定支架，其 住於i插座的=的兩側邊緣㈣延伸有—擔止部，可抵 ⑶開關用固定支架，其 面作表面接觸。 Ί有夕個凸點可與該插座的内壁 7 M4321.30 七、圖式·
10
圖 M432130
2 M432130
3 M432130
Pi
M432130 四、指定代表圖： (一) 本案指定代表圖為：第（二） (二) 本代表圖之元件符號簡單說明： 觸動開關用固定支架20 下延伸部份22 擋止部25 電磁開關30 下殼體32 熱動繼電器34 快速端子36 圖。 上延伸部份21 轉折連接部份23 上殼體31 電磁接觸器33 觸動開關35 M432130 101年4月丨0曰修正替換頁 五、新型說明： 【新型所屬之技術領域】 本創作有關一種觸動開關用固定支架，尤指一種設置 於電磁開關中，而可提高觸動開關之接點組位置之固定支 架。 【先前技術】 一般而言，電磁開關廣泛用作電力的斷開和控制電 路在^到控制負載的電器，所以經常運用於電 控制對象。 所示，傳統電磁開關1〇包括有—上、下殼體， 安裝有一電磁接觸器12、一觸動開關13、 2= ’最後接續電線15使該電磁接觸器& 3 = ff繼電器14成為電連接。該下殼體11形 成有承接槽16可接納該觸動開，並 電線15與該電磁接觸器12及 ;条 該接點組設置在該承接槽16巾，’由於， 空間狹小，㈣¥致電線15的配線 J f線15易月文洛在該觸動 方，進而影_ 17的操作，此缺失須加以Li 【新型内容】 位置本:==固且定安\=^^ 以解决的習知技術所存在的固有問題。、m工時， 為達上述之目的及功效’本創作觸動開關用固定支 3 M432130 101年4月10曰修正替換頁 架，可使一觸動開關設置在一電磁開關中，該電磁開關包 括有一上、下殼體，該下殼體内安裝有一電磁接觸器及一 熱動繼電器，且接續多數電線使該電磁接觸器、熱動繼電 器與觸動開關的接點組成為電連接，該固定支架，包括有 一上延伸部份，可連結該觸動開關；一下延伸部份，可固 定於該下殼體；及一轉折連接部份，位於該上、下延伸部 份之間，使該上延伸部份、下延伸部份及轉折連接部份連 接成為一體。 【實施方式】 茲有關本創作之詳細内容及技術說明，現以實施例作 進一步說明，但應瞭解的是，該等實施例僅為例示說明之 用，而不應被解釋為本創作實施之限制。 請參閱圖二至圖五所示，本創作觸動開關用固定支架 20，可將一觸動開關35設置在一電磁開關30中，該電磁 開關30包括有一上、下殼體31、32，該下殼體32内安裝 有一電磁接觸器33、一熱動繼電器34。該觸動開關35具 有二片快速端子36可作為電線之連接。該下殼體32的内 壁面設有一插座37可用以接納該固定支架20。 該固定支架20具有一上延伸部份21，可連結該觸動 開關35 ; —下延伸部份22，可插入於該下殼體32的插座 37内，使該固定支架20安裝於下殼體32 ;及一轉折連接 部份23位於該上、下延伸部份21、22之間，並使該上延 伸部份21、下延伸部份22及轉折連接部份23連接成為一 該下延伸部份22的表面具有二只凸點24可與插座37 M4.32130 101年4月10日修正替換頁 的内壁面作表面接觸，及兩側邊緣向外延伸有二只擋止部 25可限制該下延伸部份22的插入深度。 該觸動開關35可利用鉚合或其它連接方式來與該固 定支架20的上延伸部份21成為連結，最後將該固定支架 20的下延伸部份22插入於下殼體32的插座37内，直到 該擋止部25抵住插座37的頂端為止。由於，該觸動開關 35被組裝在固定支架20的上延伸部份21，而提高該快速 端子36的接點位置，可有效增加配線空間，且安裝便利， 可縮短組立工時。 惟以上所述者，僅為本創作之較佳實施例而已，當不 能以此限定本新型實施之範圍，即大凡依本創作申請專利 範圍及創作說明内容所作之簡單的等效變化與修飾，皆仍 屬本創作專利涵蓋之範圍内。 【圖式簡單說明】 圖一為傳統電磁開關之平面不意圖。 圖二為本創作固定支架結合有觸動開關且安裝於電磁開關 之下殼體之立體圖，其下殼體未與上殼體組合。 圖三為本創作固定支架結合有觸動開關且安裝於電磁開關 之下殼體之平面圖。 圖四為圖三之右側視圖。 圖五為本創作觸動開關用固定支架未插入於下殼體之插座 之分解圖。 上延伸部份21 【主要元件符號說明】 觸動開關用固定支架20 M432130 下延伸部份22 凸點24 電磁開關3 0 下殼體32 熱動繼電器34 快速端子36 101年4月10日修正替換頁 轉折連接部份23 擋止部25 上殼體31 電磁接觸器33 觸動開關35 插座37
TW086111381A 1996-08-08 1997-09-05 Process for controlling thermal history of Czochralski-grown silicon TW432130B (en)

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US08/694,157 US5779791A (en) 1996-08-08 1996-08-08 Process for controlling thermal history of Czochralski-grown silicon

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US (1) US5779791A (zh)
EP (2) EP1148158A3 (zh)
JP (1) JPH1095698A (zh)
KR (1) KR19980018538A (zh)
DE (1) DE69707781T2 (zh)
SG (1) SG54540A1 (zh)
TW (1) TW432130B (zh)

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Publication number Publication date
EP0823497A1 (en) 1998-02-11
KR19980018538A (ko) 1998-06-05
EP1148158A2 (en) 2001-10-24
DE69707781T2 (de) 2002-04-25
DE69707781D1 (de) 2001-12-06
SG54540A1 (en) 1998-11-16
EP1148158A3 (en) 2003-08-27
EP0823497B1 (en) 2001-10-31
JPH1095698A (ja) 1998-04-14
US5779791A (en) 1998-07-14

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