TW478016B - Method to strip off polyimide layer for electro-optic and semiconductor manufacture process - Google Patents

Abstract

This invention provides a method to strip off polyimide layer for electro-optic and semiconductor manufacture process, which includes following steps: (1) a carrier carrying at least one workpiece with polyimide layer on the surface moving to a soaking tank which contains enough chemical solution capable of loosing or stripping off polyimide layer to completely cover the workpiece carrier and to perform film-removal process to a plural number of workpieces; (2) the reacted workpiece being moving to a wash tank to wash away the residual solvent on the surface of workpiece using washing solution; (3) residual material on the surface of the workpiece being completely cleaned by a second washing treatment using washing solution; (4) the moisture on the surface of the washed workpiece is dried through baking dry or blowing dry to achieve stripping-off of the polyimide layer on the surface of the workpiece.

Description

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Λ No. 89m (m, description of the invention (i) glass surface i = ^ stripping wafers or glass for recording surface in the process of 1 conductor or optoelectronic element) film automation equipment (p〇iy m | de) Both can be used for semiconductors and light mines, especially at a matching layer; "and;:; large quantity, fast speed: to: amine film poly :: two in =: household's surface will be coated-species It is necessary to divide this film layer when the current industry is relatively wide. Although the plasma surface treatment can be done by plasma processing, which does not affect the strength of the wafer, it does not affect the strength of the wafer. Cool amine film firing room, the production capacity is not large, and it will be produced on the wafer surface: Xi Hang Xiao Er consumes time-consuming compounds, which affects subsequent processing and the final product = a combination of substances in the laboratory, small or partial removal The nature of the treatment is #suitable. Therefore, it is only suitable for the sudden increase in production capacity. This method is inconsistent with the following: = 求 = Current wafers plus fabrics will also be coated with polyurethane film during the process. If the coating is uneven or the degree is not the same, the NMP, which has been widely used in the LCD industry, must be removed before it is removed. The process is to be treated piece by piece, although please go Except that it is not available for roasting ^ 'It is Spin, Poiinnde) which is quite effective', but it still passes; = amine ^ Uncured The subsequent process or the characteristics of the final product, and even ^ 'lead to the impact 丨 do you directly report it? Instead, it affects the yield problem 'spin, and the method only handles ~ applicable / applicable to small-area LCDs' each time, and not applicable to large-scale products that are gradually mass-produced. In order to thoroughly meet the needs of the eye-catcher and future production capacity doubling, the present inventor has provided a method of ::: guide = a method of stripping the polyimide film layer in the process of photovoltaic elements. Placed in a soaking tank, 478016

MM, 89118080 V. Description of the invention (2) The immersion tank contains a chemical that can completely cover the treatment layer for loosening or stripping or etching reaction. ♦ Imine membrane / physical-sub-immersion treatment and can be completely :: Divide =: To achieve a large number of = fast processing and good results. , ... The advantages and characteristics of the method of the present invention are explained as follows: 12 copies. The film removal treatment using chemical solvent immersion in the Ming Dynasty can be performed in multiple pieces. The number of treatments is largely in the following: Increasing production capacity can save demand in response to 掸 α. . Q. This sudden increase in processing energy requires its 2 materials = chemical solvent soaking and film removal methods, which can be applied to a variety of earth materials such as round LCD, wafer size sealing grade wafer CSP, fiber, and other advanced Film removal for composite materials and various sulfamine layers. Shu Yu clothing surface + 3 winter: Mingzhi chemical solvent immersion film removal treatment method, the film removal treatment is two U and Shaanxi will not remove the dirty dead corners, and can be targeted for drying (cii / ed) or unbaked The (uncured) polyimide film layer (poiyiwde) is effectively stripped, and characteristics such as the formation of complexes on the treated surface are not formed. 4. The chemical solvent immersion and film removal treatment method of the present invention

The agent is composed of ALKANOLAMINE, 2- (2-aminoethoxy) ethyl (2- (2-AMIN0ETH0XY) ETHAN0L), BUTYROLACTONE, CYCLIC AMIDE, dimethylamine DIMETHYL SULFOXIDE), N-Methyltetrahydro Dbb (N-METHYL PYRR0LID0NE), tetramethylammonium hydroxide (tetRAMETHYL AMMONIUM Η YDR 0 XIDE) and other solvents are mixed, without chlorinated solvents, non-flammable, non-flammable With

478016 9 0 1 CM case number 89118080 month

V. Description of the invention (3) Carcinogens and solvents that destroy the ozone layer are environmentally friendly and do not harm related metals or other materials that may be in contact with them. They also have high flash points and high safety protection. ^ The method for stripping the polyimide film in the semiconductor or optoelectronic device manufacturing process according to the object of the present invention is described in detail as follows: As shown in the first figure, the flow chart of the specific implementation of the present invention is shown. In step 1, the processed object of the wafer or photovoltaic element with a polyurethane film layer on the surface is carried in a multi-piece manner (in principle, it is preferably 20 to 25 pieces) to be carried on the automation equipment. In the carrier, the carrier is transferred to an immersion tank containing a chemically mixed solvent capable of completely covering the treatment object carrier to carry out the release or peeling or etching reaction of the polyurethane film layer. The solvent system consists of alkylamines (eight 11 ^ 1 ^ 01 ^^ 11 cages), 2- (2-aminoethoxy) ethanol (2- (2 4%) ^ (^ 丁 [1 (^ 丫) £ 1 [ 1 ^ muscle〇, BUTYROLACTONE, CYCLIC AMIDE, DIMETHYL SULFOXIDE, N-METHYL PYRROL I DONE, Tetramethyl TeTRAMETHYL AMMONIUM Η YDR 0 XIDE and other solvents are mixed, of which, butyrolactone (BUTYR0LACT0NE) and N-Methyl Pyrrolo I DONE are strong cleaning power, flash A softening solvent with a fire point higher than 90 ° C and 100% miscibility with water, which can soften the polyimide film layer, which accounts for at least about 45% of the total mixed bath agent '2-(2- Ethoxy ) Ethanol (2 - (2-AMINOETHOXY) ETHANOL) can be reduced to the above-described aggressive solvent softening aid to the substrate buffer, which accounts for 35% or less of the total solvent mixture

Volume, cyclic ammonia (CYCLIC AMIDE), dimethyl amine hKDIMETHYL

478016 Amendment No. 89118080 (5) Description of the invention (4) SULFOXIDE) is an addition accelerator that can accelerate the release rate of the polyimide film layer from the above-mentioned chemical agent, which is about 彳 ς () / Α ^ "Magic Private" accounts for less than 15% of the total mixed solvent. Alkanolamine and tetramethyl τ & wind ammonium oxide (TETRAMETHYL AMMONIUM HYDROXIDE) can be 1: 夂 ^, ^ J to reduce In the case where the depolyimide film layer is re-attached to the substrate, an anti-static and lightning aid 0 / dyne electric additive is added, which accounts for less than 5% of the total mixed solvent amount to treat the polyimide film layer < The film is subjected to a film removing treatment. In the film removing treatment of κ-bismuth, the temperature of the film removing needs to be maintained at 〇04 ~ 2 丨 2. Between F, if it is a cured product of cured polyimide, the film removal time is between 5 and 90 minutes. If it is an unbaked polyimide film, (uncured polyimide), the film removal time is between 1 and 10 minutes. In step 2, the reacted processed material is transferred to a washing tank by using a carrier, and the washing tank contains a cleaning solution. The cleaning solution is pure water, deionized water, ethanol, and ultrapure water. Water, hydrogen peroxide, methanol, isopropanol, acetone or other alcohols, ketones, etc., among which pure water, deionized water, ultrapure water are all clean water, and the clean water accounts for at least 50% The flushing and spraying amount of hydrogen peroxide can quickly remove the residue on the surface of the treated object, which accounts for about 25% of the flushing amount. Water-based solvents can accelerate the speed and effect of cleaning. It accounts for less than 25% of the flushing amount and is used to remove residues or residual solvents on the surface of the treatment. During the treatment, the liquid temperature needs to be maintained 2 2 ~ Between 80 C, the rinse time needs to be maintained between 10 seconds and 2 minutes. In step 3, the surface of the processed object is further cleaned with a cleaning solution to remove the remaining material on the surface of the processed object.

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V. Description of the invention The temperature of the liquid should be kept at 22 ~ 80. Between C, the rinsing time was maintained between 10 seconds and 2 minutes. In step 4, the post-cleaning processed material is dried or blow-dried, and its temperature is maintained at 22 ~ 120. C ', and the time is maintained for 10 seconds to 2 minutes, that is, the moisture on the surface of the processed object can be dried to achieve the complete removal of the polyurethane film layer on the surface of the processed object. Therefore, the above method is implemented on automated equipment in cooperation, soaking tanks and washing tanks can be equipped with ultrasonic vibration, vacuum cleaning, running water ^ and mechanical actuation methods ^ short removal time, and chemical solvents immersed to remove the membrane. In the immersion tank, multiple pieces can be immersed in one treatment at the same time, the number of treatments can be increased, the production capacity can be increased, and the large-area film removal treatment can save stripping time. The following is the processing energy and conventional electricity of the present invention. The specific treatments of the pulp removal method and the NMp removal method can be compared (using the 0.6 · m polyimide film layer as the removal image): ^ 1, estimated by the plasma removal method: one sheet at a time, one cell at a time The area is removed, and each time is calculated in 5 minutes and calculated in 12-hour shifts. 20 working days per month can process 20X12X60 / 5 = 2880 pieces. 2. Estimation by NMP removal method: One piece at a time is calculated as 3 minutes (u n c u r e d) at a time of 12 hours, and 20 working days per month can be processed 20 × 2 × 60 × 3 = 4880 pieces. 3. Estimation of the stripping method of the present invention: 25 pieces of the minimum unit at a time, 2 minutes (uncured) each time, 12 hours per hour, and 20 working days per month.

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It is known from the above that the processing energy of the method of the present invention is 62.5 times that of division per month. Is it relevant? The removal method of 37.5 times is currently the best way to double the demand for future production capacity. -/ 、 The method of this month can use the same equipment to treat the furnace drying on the same equipment. It can be soaked with chemical solvents to remove the film. It will have a very good treatment effect on the injured objects. The materials used by government officials can improve the yield rate, and the above-mentioned methods provided by the present invention-the method of removing ... the amine film layer, which has treatments "Three of the three best peeling and treatment effects in the process Characteristics, can be due to # "large, fast processing speed need to strip the polyimide film layer :;" semiconductor "value. Positioned in the industrial use price

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Claims (1)

478016 89118080 l 〇, ij correction Six kinds of patent applications for semiconductors or methods, 1) Carrying the physical and chemical contents of the carrier 2) Washing, 3) Refinishing 4) Fully stripping on the surface 2. Stripping the electrical components in the process Transfer to a tool to react with the combined solvent to clean the material after cleaning; For example, if you apply for polyamine removal, please remove one polyisocyanate from the immersion tank in the following steps to dry the residual liquid on the surface and dry the patented polyamine film: strip the polyimide film during the process of electrical components: top In the processed material with a polyurethane film layer on the surface, 'the immersion tank is filled with a material capable of completely removing the moon; = multiple pieces of processed material that are loosened, stripped, or etched are removed at the same time. Go to the rinsing tank and use the cleaning solution to remove the residue or residual solvent. The secondary cleaning treatment will dry or blow dry the remaining physical objects on the surface of the treated object to achieve the polyurethane film on the surface of the treated object. The method of layering the semiconductor or optoelectronic element according to item 1 is completed, wherein the processing object can be a wafer or light. 3 · Stripping polyisocyanate during the process of semiconductor or optoelectronic element as described in item 1 of the scope of patent application Method of amine film layer, including alkylamine, (ALKANOLAMINE), 2- (2-aminoethoxy) ethanol (2- (2-AMINOETHOXY) ETHANOL), butyric acid (BUTYR0LACT0NE), cyclic ammonia (CYCLIC AMIDE ), Dijia, ^ (DIME THYL SULFOXIDE), N-fluorenyltetrahydrogen, and each g with (n-METHYL PYRR0LID0NE), tetramethyl hydroxide (TETRAMETHYL AMMONIUM Η Y D R 0 X I D E) and other solvents, including butyric acid Page 11 478016 Amended 90 j0 _ Case No. 89118080_ Year 26. The scope of patent application (BUTYROLACTONE) and N-methyl tetrahydrogen ketones (n-methyl PYRROLIDONE) are strong, the flash point is higher than 90, and 1 is miscible with water. A softening solvent that can soften the polyimide film f, which accounts for at least about 45% of the total mixed solvent amount, 2-(2-aminoethoxy) ethanol (2_ (2-AMINOETHOXY) ETHANOL) can reduce The above-mentioned softening solvent is an aggressive buffering aid for the base material, which accounts for about 35% or less of the total mixed solvent amount. Cyclic AMIDE and DIMETHYL SULFOXIDE can accelerate the polymerization of the softening solvent. Addition accelerator for the release rate of the sulfenylamine film layer, which accounts for about 15% of the total mixed solvent amount. The amine (ALKANOLAMINE) and the tetramethylammonium hydroxide (TETRAMETHYL AMMONIUM HYDROXIDE) can reduce the release rate. In the case where the polyurethane film layer is re-attached to the substrate, an antistatic auxiliary agent is added, which accounts for about 5% or less of the total mixed solvent amount. 4 · The method for stripping the polyimide film during the semiconductor or optoelectronic device manufacturing process described in item 1 of the scope of the patent application, wherein the immersion tank can be further equipped with ultrasonic vibration, vacuum cleaning, flowing water or mechanical agitation. To shorten the removal time. 5 · The method for stripping polyimide amine film in the process of semiconductor or optoelectronic device as described in the 1st member of the scope of application for patents, wherein the cleaning liquid is pure water, deionized water, ethanol, ultrapure water, and peroxide. Gas, methanol, isopropanol, acetone or other alcohols, etc., among which pure water, deionized water, ultrapure water are all clean water, and the clean water accounts for at least 50% of the flushing spray. Output, hydrogen peroxide can quickly remove the residue on the surface of the treated object, which accounts for about 25% of the flushing amount, methanol, ethanol, isopropanol, propane 478016 9〇 丨 〇 彳 8 _Case No. 89118080_Year Month Amendment_ VI. Patent application scope Ketone or other alcohol and ketone aqueous solvents can speed up the cleaning speed and effect, which accounts for about 25% of the flushing amount . 6. The method for stripping a polyimide film in a semiconductor or optoelectronic device manufacturing process as described in item 1 of the scope of patent application, wherein the temperature of the film removal is between 104 to 2 1 2 F. 7. The method for stripping a polyimide film layer during the manufacturing process of a semiconductor or optoelectronic device as described in item 1 of the scope of patent application, wherein the film is removed when the surface of the processed object is a cured polyimide layer The time is between 5 and 90 minutes. 8. The method for stripping a polyimide film in the process of manufacturing a semiconductor or a photovoltaic device as described in item 1 of the scope of the patent application, wherein the surface of the processed object is an uncured polyimide film (uncured ρ ο 1 yimide ) The film removal time is between 1 and 10 minutes. 9. The method for stripping the polyimide film layer in the process of semiconductor or optoelectronic device as described in item 1 of the scope of patent application, wherein the temperature of the rinsing treatment is between 22 ~ 80 ° C. 10. The method for stripping a polyimide film in a semiconductor or photovoltaic device manufacturing process as described in item 1 of the scope of the patent application, wherein the processing time is between 10 seconds and 2 minutes. 1 1. The method for stripping the polyimide film in the semiconductor or optoelectronic device manufacturing process described in item 1 of the scope of the patent application, wherein the temperature of the drying or blow-drying process is between 22 and 120 ° C. 1 2. A method for stripping a polyimide film in a semiconductor or optoelectronic device manufacturing process as described in item 1 of the scope of patent application, wherein during the drying or blow drying process Page 13 478016 Page 14