TW482922B - Method of preparing a poly-crystalline silicon film - Google Patents

Method of preparing a poly-crystalline silicon film Download PDF

Info

Publication number
TW482922B
TW482922B TW087112267A TW87112267A TW482922B TW 482922 B TW482922 B TW 482922B TW 087112267 A TW087112267 A TW 087112267A TW 87112267 A TW87112267 A TW 87112267A TW 482922 B TW482922 B TW 482922B
Authority
TW
Taiwan
Prior art keywords
thin film
silicon thin
film
amorphous silicon
substrate
Prior art date
Application number
TW087112267A
Other languages
English (en)
Chinese (zh)
Inventor
Shinichi Kawamura
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TW482922B publication Critical patent/TW482922B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
TW087112267A 1997-09-25 1998-07-27 Method of preparing a poly-crystalline silicon film TW482922B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9260303A JPH11102861A (ja) 1997-09-25 1997-09-25 多結晶シリコン薄膜の製造方法

Publications (1)

Publication Number Publication Date
TW482922B true TW482922B (en) 2002-04-11

Family

ID=17346167

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087112267A TW482922B (en) 1997-09-25 1998-07-27 Method of preparing a poly-crystalline silicon film

Country Status (4)

Country Link
US (1) US6099918A (2)
JP (1) JPH11102861A (2)
KR (1) KR100305255B1 (2)
TW (1) TW482922B (2)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6730368B1 (en) * 1997-09-25 2004-05-04 Kabushiki Kaisha Toshiba Method of preparing a poly-crystalline silicon film
JP4174862B2 (ja) * 1998-08-04 2008-11-05 ソニー株式会社 薄膜トランジスタの製造方法および半導体装置の製造方法
CN1262508C (zh) * 2000-08-28 2006-07-05 应用材料有限公司 玻璃衬底的预多晶硅被覆
JP5127101B2 (ja) * 2001-06-28 2013-01-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101912888B1 (ko) * 2011-10-07 2018-12-28 어플라이드 머티어리얼스, 인코포레이티드 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들
KR101734386B1 (ko) 2015-06-03 2017-05-12 에이피시스템 주식회사 박막 증착장치 및 기판처리방법
CN118207622A (zh) * 2024-03-18 2024-06-18 江苏豪林能源科技有限公司 一种多晶硅制品的低温制备系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5766344A (en) * 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US5366926A (en) * 1993-06-07 1994-11-22 Xerox Corporation Low temperature process for laser dehydrogenation and crystallization of amorphous silicon
JPH07221035A (ja) * 1994-02-07 1995-08-18 Semiconductor Energy Lab Co Ltd 基板処理装置およびその動作方法
JPH09246198A (ja) * 1996-03-01 1997-09-19 Matsushita Electric Ind Co Ltd 高易動度多結晶シリコン薄膜の製造方法
JP3193333B2 (ja) * 1997-10-24 2001-07-30 株式会社半導体エネルギー研究所 マルチチャンバー装置

Also Published As

Publication number Publication date
KR100305255B1 (ko) 2001-11-02
US6099918A (en) 2000-08-08
JPH11102861A (ja) 1999-04-13
KR19990029468A (ko) 1999-04-26

Similar Documents

Publication Publication Date Title
US5766344A (en) Method for forming a semiconductor
US5365875A (en) Semiconductor element manufacturing method
JP4026182B2 (ja) 半導体装置の製造方法、および電子機器の製造方法
JP2623276B2 (ja) 薄膜半導体装置の製造方法
JP3580473B2 (ja) アモルファス膜の結晶化方法および薄膜トランジスタ
TW404045B (en) The manufacture method of semiconductor device
JP3869189B2 (ja) 薄膜トランジスタの作製方法
JP2000353666A (ja) 半導体薄膜およびその製造方法
EP1113486B1 (en) Method of doping a semiconductor
TW515101B (en) Method for fabrication of field-effect transistor
JP3041177B2 (ja) 半導体装置の製造方法
KR20030060403A (ko) 비정질 실리콘의 결정화 방법
JP3977455B2 (ja) 半導体装置の作製方法
JP2007502025A (ja) シリコン薄膜の焼鈍方法およびそれから調製される多結晶シリコン薄膜
TW482922B (en) Method of preparing a poly-crystalline silicon film
JP3924828B2 (ja) 結晶性半導体膜の製造方法、および薄膜トランジスタの製造方法
CN104900491A (zh) 薄膜晶体管及其制作方法、显示装置
US7022191B2 (en) Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof
US6730368B1 (en) Method of preparing a poly-crystalline silicon film
JP4001906B2 (ja) 半導体装置の作製方法
US6451637B1 (en) Method of forming a polycrystalline silicon film
KR100712176B1 (ko) 유기 전계 발광 소자 및 그 제조 방법
JPH05259458A (ja) 半導体装置の製法
TW200403723A (en) Active matrix display devices and the manufacture thereof
JP2002134426A (ja) 薄膜の製造方法とその製造装置、および薄膜トランジスタとその製造方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees