494502 A7 B7 五、發明說明（） t明領域： (請先閱讀背面之注音？事項再填寫本頁) 本發明係有關製造半導體基板的設備與方法，更特別 是有關加強經過化學機械研磨技術（Cheniical Mechanical Polishing，CMP)研磨後的矽的清潔設備與方法。 發明背景： 經濟部智慧財產局員工消費合作社印製 製造半導體基板時，一細長棒狀單晶或多晶矽半導體 物質被切成約0.7mm厚的薄片，其後該薄片或基板被緊 壓在一旋轉研磨墊上，並被研磨泥漿所覆蓋並研磨。當研 磨墊旋轉時，研磨泥漿與基板的表面作用並磨擦該表面而 留下一層平滑的、鏡子一樣的表面。在研磨過程中，基板 表面的矽鍵斷掉而留下懸垂的、易鍵結的未飽合珍鍵。這 些未飽合鍵與氧或氧化劑作用形成一薄層氧化物以保護 矽基板表面（即’形成一保護層）。該保護層為親水性的（不 吸引微塵粒子），故便於後續的清潔工作。在形成保護層 之前，那些微塵粒子可被吸引至斥水性的矽表面，因此， 在後續的保護作用中，這些高密度被吸收的微塵粒子會被 埋入基板表面，而導致高度的表面缺陷，且使表面更粗 糙，而在後續的清洗過程中更難清洗。 傳統上’為降低該種缺陷，碎基板必須不斷的保持潮 濕’且在基板自一研磨器的超純水（DI Water)中移出時立 刻被浸入一清洗液中，在此的清洗液指的是含有氧化劑及 蚀刻液者，如過氧化铵混合物（Ammonium Peroxide mixtures，APM)氫氧四甲基氨光阻顯影液（tmAH)、四甲基 第2頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 外4502 A7494502 A7 B7 V. Description of invention () Fields of Ming: (Please read the note on the back? Matters before filling out this page) The present invention relates to equipment and methods for manufacturing semiconductor substrates, and more particularly to strengthening chemical mechanical polishing technology ( Cheniical Mechanical Polishing (CMP) silicon cleaning equipment and method. Background of the Invention: When a semiconductor substrate is printed and manufactured by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, an elongated rod-shaped single crystal or polycrystalline silicon semiconductor substance is cut into a thin sheet of about 0.7 mm in thickness, and then the sheet or substrate is compacted in a rotation The polishing pad is covered with abrasive slurry and ground. As the polishing pad rotates, the polishing slurry interacts with the surface of the substrate and rubs it, leaving a smooth, mirror-like surface. During the grinding process, the silicon bonds on the substrate surface are broken off, leaving draped, easily-bonded, unsaturated rare bonds. These unsaturated bonds interact with oxygen or oxidants to form a thin layer of oxide to protect the surface of the silicon substrate (i.e., 'form a protective layer'). The protective layer is hydrophilic (does not attract fine dust particles), so it is convenient for subsequent cleaning work. Before the protective layer is formed, those fine dust particles can be attracted to the water-repellent silicon surface. Therefore, in the subsequent protection, these high-density absorbed fine dust particles will be buried in the surface of the substrate, resulting in high surface defects. It also makes the surface rougher and more difficult to clean in subsequent cleaning processes. Traditionally, "to reduce such defects, the broken substrate must be kept moist constantly" and immediately immersed in a cleaning solution when the substrate is removed from the ultra-pure water (DI Water) of a grinder. The cleaning solution here refers to Those containing oxidants and etching solutions, such as Ammonium Peroxide mixtures (APM), tetramethylammonium photoresist developer (tmAH), tetramethyl. Page 2 This paper applies Chinese national standards (CNS) A4 size (210 X 297 mm) outside 4502 A7
五、發明說明（） 遭乳化叙混合物（Ammoniulr 氨與過氧化物的混合 V ' - XA1 \J ll I u 11 —e mixtures，APM)氫氧四甲基氨光阻顯影液 (TMA_過氧化氫的混合物之類。#用氨水或mm的 理由是為緩慢蝕刻該氧化表面，以於渣、、秦二 Λ於Μ洗則盡量去除微塵 粒子’因Λ，該清洗液提供了清潔及更多的再製的環境。 在清洗液中形成的保護層包含較少的缺陷因此便於清 洗。然而，即使以ΑΡΜ清洗，埋藏的缺陷及清洗的困難 依然存在。 因此，亟需一種改良的設備與方法以增進研磨後的基 板表面的可清潔力。 發明目的及概述： 本發明提供一種方法，其中一半導體基板（如，矽、 多晶矽、或絕緣體上的矽）在經過化學機械研磨技術 (Chemical Mechanical Polishing，CMP)研磨後，以一清洗 液，最好是被以去離子水大大地稀釋（例如，一階 等級）的清洗液所保護，該基板被緊壓至一與該基板做相 對運動的研磨墊上（即，在一清洗液拋光（a cleaning Solution Buff)過程中），以使該基板及/或研磨墊運動（旋 轉、移動等）。較佳地，該清洗液拋光（a Cleaning solution Buff)係實行於一研磨盤或一拋光盤（在CMP研磨機中通 常會整合有第二個研磨平台，作為研磨後之晶圓清洗用， 稱為buffing)(例如，在不同狀態的傳統研磨設備）上，其 後JL刻施以傳統的清洗步驟或即使研磨步驟。其結果顯示 第3頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) --------訂---------線· 經濟部智慧財產局員工消費合作社印製 494502 A7 B7 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 五、發明說明（ 極佳的基板缺陷率及清潔率。 相#该極佳的基板缺陷率及清潔率是歸因於埋入基 板表面的微塵粒子數目顯著的減少之故。微塵粒子數目顯 著的減少相信是歸因於： (1 )因為孩研磨表面保持與研磨墊作相對運動，故微 塵粒子無法與該研磨表面作靜態接觸，微塵粒子因此不會 於研磨表面上被吸收，反而被壓入該旋轉墊中，移動經過 孩研磨表面，因此於上護膜層時可顯著的降低被埋入研磨 表面的可能性； (2) 該保護膜層最好用稀釋的清洗液以較低速率製 成’因此可降低缺陷埋藏的可能性；而且 (3) 導入護膜層的清洗液在研磨完成後立刻形成因此 降低基板研磨表面與缺陷接觸的可能性；特別是該導入護 膜層的清洗液最好在研磨設備内形成，因此防止其暴露於 與基板處理者、基板運送者（例如，卡式晶圓）及下載過程 相關的缺陷中。 因為每個基板均同時在經過化學機械研磨技術 (Chemical Mechanical p〇iishing，CMp)研磨後即上護膜 層，故本發明的方法不僅降低潛在的缺陷，且在基板處理 上提供較少的改變，與脫離表面品質標準較小的偏差。 只要研磨盤被供以兩條液體供給線’實行本發明的方 法的設備可在基板被研磨的同一研磨盤上實行本發明的 方法；或亦可在另一研磨盤上實行本發明的方法。亦可使 用加壓的清洗液及/或加壓的去離子水以自研磨墊上更快 —-—---------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 494502 A7 B7 五、發明說明（） 速且均勻的沖掉微塵粒子。 本發明的其他目的、特徵與優點在下述的較佳實施例 的詳細敘述、申請專利範圍、及圖示中會更加明顯。 麗式簡單說明： 第1圖為本發明的研磨設備的上視圖。 第2圖為一包括第丨圖之研磨設備的基板研磨系統的上視 圖。 圖號對照說明： 11 研磨設備 13 轉盤 15 研磨墊手 17 基板後頭 19a-i c液體供應線 21 泥漿/清洗臂 23a — c液源 24 控制器 25 紋溝 S 基板 29 基板研磨系統 3 1a· _b研磨設備 33 可旋轉橫木 發明詳細說明： 第1圖為實行本發明之方法的研磨設備11的上視 圖。該研磨設備11包括一轉盤13,轉盤13上設有一研 磨墊1 5。迫緊一半導體基板例如，碎或多晶碎基板的基 板嵌頭1 7緊緊的抵住研磨墊1 5。一或多個液體供應線 1 9a-c與研磨墊1 5連結以自一液源導出液體，該液體供應 第5頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) — — — — — — — ·11111111 . 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（） 線1 9a-c最好如本行業所習知的方式，與延伸於該研磨墊 1 5上方的泥漿/清洗臂2丨相連結。 含有一清洗液（例如APM)的第一液源23a使護膜層 形成於一研磨過的矽表面，且藉由一清洗液供應線1 9a與 居研磨塾1 5相接。含有去離子水的第二液源23b藉由一 去離子水供應線1 9b與該研磨墊1 5相接。然而，清洗液 與去離子水可同在一個液源中並藉由一個液體供應線與 S汗磨塾1 5相接。該清洗液及/或去離子水可被加壓（例 如’ 15-20 psi)。含有研磨基板表面的泥漿的第三液源23c 汉毛基板嵌頭1 7上，該泥漿源23c藉由一泥漿供應線1 9c 入汶研磨塾1 5相接。若研磨係施行於一分離的研磨盤 上’如第2圖所示，泥漿源23c可被省略。較佳的，該研 磨塾15有一或多個紋溝25於其上，以於轉盤及研磨 墊1 5旋轉時分配液體。同樣地，亦可採用無紋溝的研磨 墊。 一與液體供應線1 9a-c相接的控制器24包含一程式 以將各液體供應至研磨墊1 5，並使該研磨設備如下所述 地運轉。 在運轉時，一基板S(例如一單晶矽、多晶矽或絕緣 體上的矽）藉由將該基板S裝載至基板嵌頭17上而被裝入 本發明的研磨設備丨丨中。該基板嵌頭1 7使基板s壓抵住 研磨墊1 5，且研磨墊1 5開始旋轉。一研磨泥漿藉由紋溝 25分佈在m墊上，研磨並與該基板s表面作用，最後留 下一層平滑的、平坦的矽表面。此後，泥漿及微塵粒子藉 第6頁 I紙張尺度適用中國國家標準（CNS)A4規格（21Q χ 297公餐)------- (請先閱讀背面之注音？事項再填寫本頁)V. Description of the Invention () Ammoniulr Ammonia and Peroxide Mixture V '-XA1 \ J ll I u 11 —e mixtures (APM) Tetramethylammonium Photoresist Developer (TMA_Peroxidation) The mixture of hydrogen and the like. # The reason for using ammonia or mm is to slowly etch the oxidized surface, and to remove the dust particles as much as possible when the slag, Qin Er Λ is washed, the cleaning solution provides cleaning and more The protective layer formed in the cleaning solution contains fewer defects and is therefore easy to clean. However, even with APM cleaning, buried defects and difficulties in cleaning still exist. Therefore, an improved device and method are urgently needed Improving the cleanability of the polished substrate surface. Purpose and Summary of the Invention: The present invention provides a method in which a semiconductor substrate (such as silicon, polycrystalline silicon, or silicon on insulator) is subjected to chemical mechanical polishing technology (Chemical Mechanical Polishing, CMP) After polishing, the substrate is protected by a cleaning solution, preferably a cleaning solution that is greatly diluted (eg, first order) with deionized water. The polishing pad is moved relative to the substrate (ie, during a cleaning solution buff) to move the substrate and / or the polishing pad (rotate, move, etc.). Preferably, the cleaning Liquid cleaning (a Cleaning solution Buff) is implemented on a polishing disk or a polishing disk (the second polishing platform is usually integrated in the CMP polishing machine for wafer cleaning after polishing, called buffing) (for example, On conventional grinding equipment in different states), JL then applied the traditional cleaning step or even the grinding step. The results show that the paper size on page 3 applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page) -------- Order --------- Line · Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives 494502 A7 B7 Intellectual Property of the Ministry of Economic Affairs Printed by the Bureau ’s Consumer Cooperatives 5. Description of the invention (Excellent substrate defect rate and cleaning rate. Phase # The excellent substrate defect rate and cleaning rate is due to the significant reduction in the number of fine dust particles buried on the substrate surface The significant reduction in the number of dust particles is believed to be due to: (1) Because the abrasive surface remains in relative motion with the polishing pad, the dust particles cannot make static contact with the abrasive surface, and therefore the dust particles are not absorbed on the abrasive surface Instead, it is pressed into the rotating pad and moves through the abrasive surface, so the possibility of being buried in the abrasive surface can be significantly reduced when the protective film layer is applied; (2) The protective film layer is preferably diluted with a cleaning solution Made at a lower rate so that the possibility of defect burying can be reduced; and (3) the cleaning liquid introduced into the coating layer is formed immediately after the polishing is completed, thereby reducing the possibility of the substrate's polished surface contacting the defect; especially the introduction protection The cleaning solution of the film layer is preferably formed in the polishing equipment, so it is prevented from being exposed to defects related to the substrate processor, the substrate carrier (for example, a cassette wafer), and the download process. Because each substrate is simultaneously coated with a chemical film after chemical mechanical polishing (CMp) grinding, the method of the present invention not only reduces potential defects, but also provides fewer changes in substrate processing. , Small deviation from the surface quality standard. As long as the polishing disc is supplied with two liquid supply lines', the apparatus for implementing the method of the present invention can perform the method of the present invention on the same polishing disc on which the substrate is polished; or the method of the present invention can be performed on another polishing disc. You can also use pressurized cleaning solution and / or pressurized deionized water to make it faster from the polishing pad. -Line (Please read the precautions on the back before filling this page) 494502 A7 B7 V. Description of the invention () Quickly and uniformly remove the dust particles. Other objects, features, and advantages of the present invention will become more apparent in the detailed description of the preferred embodiments described below, the scope of patent applications, and the drawings. Rebecca brief description: Figure 1 is a top view of the grinding equipment of the present invention. FIG. 2 is a top view of a substrate polishing system including the polishing apparatus of FIG. Comparative description of drawing numbers: 11 Grinding equipment 13 Turntable 15 Grinding pad hand 17 Substrate back 19a-ic liquid supply line 21 Mud / washing arm 23a — c Liquid source 24 Controller 25 Gutter S Substrate 29 Substrate polishing system 3 1a · _b grinding The device 33 can be rotated in detail. The first embodiment is a top view of the grinding device 11 for carrying out the method of the present invention. The grinding equipment 11 includes a turntable 13 on which a grinding pad 15 is provided. The substrate insert 17 of a semiconductor substrate such as a chipped or polycrystalline chipped substrate is tightly pressed against the polishing pad 15 tightly. One or more liquid supply lines 19a-c are connected to the polishing pad 15 to discharge liquid from a liquid source. The liquid supply is on page 5. This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm). (Please read the precautions on the back before filling out this page) — — — — — — — · 11111111. Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed A7 by the Consumers ’Cooperatives of the Ministry of Economic Affairs Intellectual Property Bureau The lines 19a-c are preferably connected to the mud / washing arms 2 丨 extending above the polishing pad 15 in a manner known in the art. The first liquid source 23a containing a cleaning solution (for example, APM) forms a protective film layer on a polished silicon surface, and is connected to the residential polishing pad 15 through a cleaning solution supply line 19a. The second liquid source 23b containing deionized water is connected to the polishing pad 15 through a deionized water supply line 19b. However, the cleaning solution and the deionized water may be in the same liquid source and connected to the S sweat mill 15 through a liquid supply line. The cleaning fluid and / or deionized water may be pressurized (e.g., ' 15-20 psi). The third liquid source 23c containing the slurry on the surface of the ground substrate is attached to the Han Mao substrate insert 17, and the slurry source 23c is connected to the grinding mill 15 through a mud supply line 19c. If the grinding is performed on a separate grinding disc 'as shown in Fig. 2, the mud source 23c can be omitted. Preferably, the grinding pad 15 has one or more grooves 25 thereon for distributing the liquid when the rotary table and the grinding pad 15 rotate. Similarly, a grooveless polishing pad may be used. A controller 24 connected to the liquid supply lines 19a-c contains a program to supply each liquid to the polishing pad 15 and causes the polishing apparatus to operate as described below. In operation, a substrate S (for example, a single crystal silicon, polycrystalline silicon, or silicon on an insulator) is loaded into the polishing apparatus of the present invention by loading the substrate S on a substrate insert 17. The substrate insert 17 presses the substrate s against the polishing pad 15 and the polishing pad 15 starts to rotate. A polishing slurry is distributed on the m pad through the grooves 25, grinds and interacts with the surface of the substrate s, and finally leaves a layer of smooth, flat silicon. After that, the mud and fine dust particles are applied on page 6 I paper size is applicable to Chinese National Standard (CNS) A4 specifications (21Q χ 297 meals) ------- (Please read the note on the back? Matters before filling out this page)
A7A7
五、發明說明（） 由自去離子水供應線19b噴出的高壓去離子水而從研磨 墊1 5上清洗掉，在此同時，藉由基板嵌頭丨7使基板s壓 抵住研磨墊1 5而與研磨墊丨5 一起繼續旋轉，如傳統方式 一般。 在研磨塾1 5與基板S都被清洗過後，清洗液自泥漿 源23c供應至研磨墊15，且高壓水持續被供應至研磨塾 15，而研磨墊15繼續與緊抵其上的基板s 一起旋轉。較 佳地，該清洗液以每分鐘2〇〇ml的低流率持續供應2〇秒 鐘，而在基板S與研磨墊15間作相對運動。該清洗液與 基板S表面反應而於其上形成一層親水性的氧化保護膜 層。因為該保護膜層係形成於在一清洗液拋光（aCleaning Solution Buff)過程中的該研磨墊上，任何與該基板s接觸 的微塵粒子均會被該旋轉的研磨墊1 5所載運，而產生一 個慣性力阻止缺陷埋入該研磨過的基板表面。在該研磨墊 上的清洗液濃度被大量的降低了，以確保在如此低速的相 對運動下氧化率也被降低，而令微塵粒子的埋入深度保持 在最小。此外，基板S不會暴露在晶圓處理者及下載過程 所產生的缺陷中。因為與清洗液的接觸是在清洗完成之後 很短的時間内（最好是立刻），相信較少的缺陷會從周圍的 環境中被吸收。不管上述的理由，測試結果也證明本發明 足方法可使基板含有較少的缺陷，且有較佳的可清潔度。 第2圖為基板研磨系統29的上視圖。該系統29包括 許多傳統的研磨設備31a-b以實行標準的研磨作用，並包 括第1圖之本發明的研磨設備11以實行本發明的方法 第7頁 本紙張尺度適用中關家標準（CNS)A4規格（210 X 297公爱)" --- 丨丨丨丨丨丨------# (請先閱讀背面之注音3事項再填寫本頁) 訂---------線. 經濟部智慧財產局員工消費合作社印製 494502 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（） 然而，第2圖的實施例中，只有研磨是於傳統的研磨設備 31a-b上貫行，且只有清洗液拋光（a cleaning Solution Buff) 是於本發明的研磨設備11上實行。因此於此實施例中， 研磨設備11不含有泥漿源23c，只包含兩條液體供應線（清 洗液及去離子水）；且傳統的研磨設備3 1 a-b不含有清洗液 源23a，只包含兩條液體供應線（泥漿及去離子水）。此外， 弟2圖中的傳統研磨設備3 1 a-b與本發明的研磨設備11 包含與第1圖之本發明的研磨設備11相同的組成，因此， 在該等研磨設備中以相同的圖號代表相同的部分。 特別的，傳統的研磨設備3 1 a-b具有一轉盤1 3a、 13b，其上設有一研磨墊15a、15b、一或多個液體供應線 19bl-cl、19b2_c2、一去離子水源23 M、23b2藉由去離 子水供應線19b 1、19b2而與研磨墊15a、15b相接、及一 或多個泥漿源23cl、23c2藉由泥漿供應線19 cl、19 c2 而與研磨墊1 5 a、1 5 b相接。 系統2 9亦可包括一個承載杯1 4及一與許多基板嵌頭 17a-d相連結的可旋轉橫木33，因此，基板s可承載於轉 盤13c上並自之承載於基板嵌頭17a上，同時基板嵌頭 1 7 b - d將基板緊壓在不同的研磨設備的研磨墊上。 操作時，一第一基板S 1被裝載（例如，經由一個圖中 未示的晶圓處理者）至承載杯14上，並自之被承載於第一 基板嵌頭17a上。該可旋轉橫木33運送第一基板si至第 一傳統研磨設備3U，於該處第一基板S1如前所述地被 研磨，同時第二基板S2被裝載至承載杯14上，並自之被 第8頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注咅？事項再填寫本頁) -I I I I I--訂---I I I I--· 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 五、發明說明（ 承载於第二基板嵌頭17b上。該可旋轉橫木33再次運送 第基板S 1至第二傳統研磨設備3 1 b以被研磨（例如：藉 由一個比第一傳統研磨設備31a所用的更細的泥漿）；第 基板S2被第一傳統研磨設備3丨a所研磨，且第三基板 S3被裝載至承載杯14上’並自之被承載於第二基板嵌頭 1 7c 上。 其後’可旋轉橫木33運送第一基板至本發明的 研磨設備1 1，在該處清洗液或清洗液及去離子水被供應 汗磨土 15而使第一基板S1的研磨表面形成一層護膜 層，如前第1圖之說明。同時第二基板82被第二傳統研 磨叹備3 1 b所研磨，第二基板s 3被第一傳統研磨設備3 J a 所研磨，及第四基板S4被被裝載至承載杯14上，並自之 被承載於第四基板嵌頭1 7d上。 其後，可旋轉橫木33運送第一基板S1至承載杯14， 於該處第一基板嵌頭17a將第一基板S1放至承載杯Μ 上，一個基板處理者（圖中未示）自該系統29中取出第一 基板Si。因為一護膜層，一個天生不起反應的膜層，存 在於第一基板S1的表面，故來自周圍環境、承載杯Μ戈 基板處理者（圖中未示）的缺陷不會被第一基板s 1所吸 收。如前所述，根據測試數據顯示，以此方式製成的其板 有較以先别技術製成者更低的缺陷等級。 以上所揭示者僅為本發明的較佳實施例，在本發明的 範圍内修改上述的設備與方法對熟悉該行人士 j 、 叩&為顯 而易見的。例如，於現有的泥漿/清洗臂上增加清洗液供 . , --------^--------- (請先閱讀背面之注意事項再填寫本頁) 494502 A7 ------B7______ 五、發明說明（） 應線’及’將傳統的設備作少許的修改以施加清洗液至研 磨塾上。當然，亦可在將基板自研磨器上下載之前，使用 (請先閱讀背面之注意事項再填寫本頁) 其他設備以施加清洗液至基板的研磨表面上當作前清洗 步驟。 任何設備均可使用，只要其具有一與基板的被研磨表 面相接觸的面’且在清洗液被施於該設備的接觸面（或基 板的被研磨表面）時其係與基板保持相對運動（例如轉 動、移動等）。該等設備可使用一或多個刷子或皮帶，且 同時接觸基板的整個被研磨表面。同樣的，任何方法均可 使用，只要其施加清洗液至基板的被研磨表面而可使微塵 粒子不會相對靜止於於該表面，及/或減緩研磨表面的氧 化速度以降低濩膜層中的缺陷數目。因此，可被了解的 疋，基板與孩接觸表面的相對速度可隨清洗液的稀釋度作 相反的改變，因為當氧化率降低時（例如，增加清洗液的 稀釋度），缺陷會移動得較慢（相對於該被研磨表面）。 因此，雖然本發明以上述之較佳實施例揭示，但其他 實施例亦不脫離由以下之申請專利範圍所界定之本發明 的精神與範圍。 經濟部智慧財產局員工消費合作社印製V. Description of the invention () The high-pressure deionized water sprayed from the deionized water supply line 19b is used to clean the polishing pad 15 from the polishing pad. At the same time, the substrate s is pressed against the polishing pad 1 by the substrate insert 丨 7. 5 and continue to rotate with the polishing pad 丨 5 as usual. After both the polishing pad 15 and the substrate S have been cleaned, the cleaning liquid is supplied from the mud source 23c to the polishing pad 15 and high-pressure water is continuously supplied to the polishing pad 15 and the polishing pad 15 continues to be with the substrate s immediately above it. Spin. Preferably, the cleaning solution is continuously supplied at a low flow rate of 200 ml per minute for 20 seconds, and a relative movement is performed between the substrate S and the polishing pad 15. The cleaning solution reacts with the surface of the substrate S to form a hydrophilic oxidation protective film layer thereon. Because the protective film layer is formed on the polishing pad during a cleaning solution buff, any fine dust particles in contact with the substrate s will be carried by the rotating polishing pad 15 to produce a The inertial force prevents defects from being buried in the polished substrate surface. The concentration of the cleaning liquid on the polishing pad is greatly reduced to ensure that the oxidation rate is also reduced at such a low speed relative movement, so that the embedding depth of the dust particles is kept to a minimum. In addition, the substrate S is not exposed to defects generated by the wafer processor and the download process. Because contact with the cleaning solution is short (preferably immediately) after cleaning is complete, it is believed that fewer defects will be absorbed from the surrounding environment. Regardless of the above reasons, the test results also prove that the method of the present invention can make the substrate contain fewer defects and have better cleanability. FIG. 2 is a top view of the substrate polishing system 29. The system 29 includes a number of conventional grinding equipment 31a-b to perform standard grinding, and includes the grinding equipment 11 of the present invention shown in Figure 1 to implement the method of the present invention. ) A4 specification (210 X 297 public love) " --- 丨 丨 丨 丨 丨 丨 ------ # (Please read the note 3 on the back before filling this page) Order ------- --Line. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 494502 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () However, in the embodiment shown in Figure 2, only the grinding is performed by traditional grinding The equipment 31a-b runs continuously, and only a cleaning solution buff is performed on the grinding equipment 11 of the present invention. Therefore, in this embodiment, the grinding equipment 11 does not contain a slurry source 23c, and only includes two liquid supply lines (cleaning liquid and deionized water); and the conventional grinding equipment 3 1 ab does not contain a cleaning liquid source 23a, and only includes two Liquid supply lines (mud and deionized water). In addition, the conventional grinding equipment 3 1 ab shown in FIG. 2 and the grinding equipment 11 of the present invention have the same composition as the grinding equipment 11 of the present invention shown in FIG. 1. Therefore, these grinding equipments are represented by the same drawing numbers. The same part. In particular, the conventional grinding equipment 3 1 ab has a turntable 1 3a, 13b on which a grinding pad 15a, 15b, one or more liquid supply lines 19bl-cl, 19b2_c2, and a deionized water source 23M, 23b2 are borrowed. Deionized water supply lines 19b 1, 19b2 are connected to the polishing pads 15a, 15b, and one or more mud sources 23cl, 23c2 are connected to the polishing pads 15 a, 1 5 through the mud supply lines 19 cl, 19 c2. b 相接. The system 29 can also include a carrying cup 14 and a rotatable cross-piece 33 connected to a plurality of substrate inserts 17a-d. Therefore, the substrate s can be carried on the turntable 13c and from the substrate insert 17a. At the same time, the substrate inserts 17 b-d press the substrate tightly onto the polishing pads of different polishing equipment. During operation, a first substrate S1 is loaded (for example, via a wafer processor not shown) onto the carrier cup 14 and is carried on the first substrate insert 17a therefrom. The rotatable crossbar 33 transports the first substrate si to the first conventional polishing equipment 3U, where the first substrate S1 is polished as described above, and at the same time the second substrate S2 is loaded onto the carrier cup 14 and from there The paper size on page 8 applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the note on the back? Matters before filling out this page) -IIII I--Order --- III I- -· Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (carried on the second substrate insert 17b. The rotatable beam 33 transports the second substrate S 1 to the second traditional grinding equipment 3 1 b again to be Grinding (for example, by using a thinner slurry than that used in the first conventional grinding equipment 31a); the second substrate S2 is ground by the first conventional grinding equipment 3a, and the third substrate S3 is loaded onto the carrier cup 14 ' It is then carried on the second substrate insert 17c. Thereafter, the rotatable beam 33 transports the first substrate to the grinding apparatus 11 of the present invention, where a cleaning liquid or a cleaning liquid and deionized water are supplied Sweating ground 15 to form a polished surface of the first substrate S1 The protective film layer is as described in FIG. 1. At the same time, the second substrate 82 is polished by the second conventional polishing device 3 1 b, the second substrate s 3 is polished by the first conventional polishing device 3 J a, and the fourth The substrate S4 is loaded on the carrier cup 14 and is carried on the fourth substrate insert 17d. Thereafter, the crossbar 33 can be rotated to transport the first substrate S1 to the carrier cup 14 where the first substrate is placed. The insert 17a puts the first substrate S1 on the bearing cup M, and a substrate processor (not shown) removes the first substrate Si from the system 29. Because of a protective film layer, a film layer that is inherently unreactive , Exists on the surface of the first substrate S1, so the defects from the surrounding environment, the substrate handler (not shown in the figure) of the substrate M will not be absorbed by the first substrate s1. As mentioned earlier, according to the test data display The board made in this way has a lower defect level than the one made by the prior art. The above disclosed is only a preferred embodiment of the present invention. The above-mentioned equipment and methods are modified within the scope of the present invention. It is obvious to those familiar with the industry j, 叩 &. For example, in existing Add cleaning liquid to the mud / washing arm., -------- ^ --------- (Please read the precautions on the back before filling this page) 494502 A7 ----- -B7 ______ 5. Description of the invention () The line should be modified with a little modification to the traditional equipment to apply the cleaning liquid to the grinding pad. Of course, it can also be used before downloading the substrate from the grinder (please read the back first) Please pay attention to this page and fill in this page) For other equipment, apply the cleaning liquid to the polishing surface of the substrate as a pre-cleaning step. Any equipment can be used as long as it has a surface that is in contact with the polished surface of the substrate. When it is applied to the contact surface of the device (or the polished surface of the substrate), it maintains relative movement (such as rotation, movement, etc.) with the substrate. These devices can use one or more brushes or belts and simultaneously touch the entire surface of the substrate being polished. Similarly, any method can be used, as long as it applies a cleaning solution to the surface of the substrate to be polished so that the dust particles will not be relatively stationary on the surface, and / or slow down the oxidation rate of the polishing surface to reduce the The number of defects. Therefore, it can be understood that the relative speed of the substrate and the contact surface can be changed inversely with the dilution of the cleaning solution, because when the oxidation rate decreases (for example, increasing the dilution of the cleaning solution), the defects will move more Slow (relative to the surface being polished). Therefore, although the present invention is disclosed by the above-mentioned preferred embodiments, other embodiments do not depart from the spirit and scope of the present invention as defined by the following patent application scope. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs