TW497140B - Process system for plasma etching and chemical vapor deposition - Google Patents

Abstract

The present invention provides a plasma process system of plasma etching and chemical vapor deposition suitable for an IC production process, which comprises a gas supply device for supplying a plurality of gas streams and separately and independently controlling the output of each gas stream; and a reaction chamber having a plurality of regions for receiving the gas streams. The gas streams adopt a top or top/bottom supply means for compensating asymmetrical parts in the plasma process.

Description

497140 V. Description of the invention (l) ------- 'The present invention relates to a plasma process system suitable for plasma etching and chemical vapor deposition (CVD) in integrated circuit (IC) production processes. The present invention is more relevant for compensating for the center / edge (Center-τ〇-Edge) and the edge / edge. -Edge) asymmetric plasma processing system for deposition or etching. Conventional plasma etching or CVD mostly uses a single gas supply device as a standard design. The gas is evenly sprayed on the surface of the platform. However, there are still some unresolved issues in the critical dimensional dimension and overall consistent results control. These problems' will be briefly described below. Fig. 1 is a schematic diagram of a conventional or CVD reaction chamber. The conventional engraving and CVD processes use a shower head or a jet (spray uniform gas to etch wafers or thin film deposition, as shown in the upper part of Figure i. However, there are A number of asymmetrical environments exist, for example: a wafer pass-through needs a wafer passage (Wafer Passage), as shown in Figure 4 on the right side of Figure 1; in addition, a side pumping device (Side Pumping) to exhaust gas It is discharged through the channel, as shown in No. 2 on the left side of Figure 1. Even if the gas supply is completely uniform, it will cause bad results when it encounters the condition of this uneven sentence. In the small-size wafer, symmetrical The requirement does not need to be too precise. But the increase in wafer size is accompanied by the need for more precise control. Therefore, the structure of the above-mentioned reaction chamber extraction or wafer in and out causes uneven side / edge difference effects (Side — T〇-Side Effect) may cause a low yield (L0w Yield) or no energy production at all. In addition, the above-mentioned pumping and grasping of wafers in and out of these tools may cause the reaction chamber to be asymmetrical. In addition, 'Even with money CVD tool and homogenized, before the manufacturing process there

0503-6498TW; TSMC200l-0198; Hui.ptd 497140 V. Description of the invention (2) ------ =. For example: the difference between the center and the edge of the lithography production xiao due to the level problem. After the wafer is exposed, the difference between the edge / edge knife cloth in the baking process and the unavoidable 'is also the current problem to be summarized. The conventional plasma process system includes two problems: (1) Central / peripheral consistency caused by pre-process and machine differences. + (2) Asymmetric etching / deposition rate of the wafer itself. In view of this, the main object of the present invention is to provide a gas / response system with asymmetric center / edge and edge / edge / edge in CVD and etching processes. In order to achieve the above-mentioned object, the present invention proposes a plasma process system suitable for plasma etching and chemical vapor deposition (Chemi Vapor Deposition) processing procedures of the integrated circuit (1C) production process, including: a body supply device To supply a plurality of gas tributaries, and to independently control the output of these gas tributaries; and a reaction chamber having a plurality of zones for the output of these gas tributaries. °° ㉟ The gas supply device includes a control valve or a plurality of gas supply units, which are used for the proportion of the gas tributary flow of an input recipe (K ey-I n R ecipe) to the center / edge or edge / edge of the reaction chamber. Symmetrical conditions are compensated by means of a Top Gas Feed or a Bottom Gas Feed. Brief description of the schema:

497140 V. Description of the invention (3) ----- In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings to make a detailed description as follows Fig. 7F Xiongming Ming: Fig. 1 is a schematic diagram of a conventional etching or CVD reaction chamber. FIG. 2 is a schematic diagram of a system structure according to an embodiment of the present invention. Fig. 3 is a schematic structural diagram of another embodiment of the present invention for solving the difference in center / edge distribution. Figure 4 is a schematic structural diagram of another embodiment of the present invention. Fig. 5 is a schematic diagram of a method for controlling and adjusting the gas tributary flow by using different gas supply units. Explanation of symbols: 1 0 ~ gas supply device; 1 2 ~ reaction chamber; 14 ~ gas mixer; 16 ~ control valve; 18 ~ central nozzle (gas injector) or nozzle; 20 edge jet (gas j njector) or nozzle; 20 ~ gas supply device; 2 ~ reaction chamber; 24 ~ gas mixer; 26 ~ control valve; 50 ~ gas supply device; 52,54 ~ gas supply unit.

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Example: size two; = and for CVD, adjust the variables to find the factors that can affect the key two: =: rsion). Such as temperature, pressure and power supply cause different plasma; 澧 庶 辇. Shen & ^

The results of Ba Baoshui / Chendu Temple found that the gas branch flow pair = maximum. In the present invention, the problem of compensating the center / edge or edge) is achieved; when the formula (Key-In) _Recipe on the split control valve is input, the flow ratio of each tributary gas is adjusted, and the problem of uneven conditions is adjusted. $ π ^ h Therefore, the present invention proposes a plasma process system suitable for the production of integrated circuits. The plasma process system of the present invention includes a gas supply device 10 as shown in FIG. 2 to supply a plurality of gas tributaries. And independently control the output stream I of these gas tributaries, and a reaction chamber for plasma etching of the wafers, CJD chemical vapor deposition, and a plurality of areas for the gas tributaries Output. The gas supply device package 10 includes a gas mixer 14 and a control valve 16. In semiconductor process applications, sputtering or etching is usually performed with a mixed gas. Therefore, a plurality of gases 1, 2 and 3 are mixed before the gas mixer 14 is mixed. The control valve 16 is a split control unit 'that splits the gas from the gas mixer 14 and outputs it to the reaction chamber 2. The control valve 16 adjusts the output control of each split gas according to a recipe. In order to solve the problem of inconsistent distribution of central / edge gas tributaries. The invention proposes a method for controlling the central / peripheral dual zone gas tributary flow. As shown in Fig. 2, the center of the reaction chamber is provided with a central injector or shower head 18, and the edge thereof is provided with an edge gas injector or shower head 20 to divide the reaction chamber into

497140 V. Description of the invention (5) Two-circle area. The control valve 16 independently controls the branch gas flows of the center and the edge according to the above formula. For example: 80% of the gas is extracted from the top two zones of the reaction chamber via the central injector 18 and 20% via the edge injector 20 respectively. The top gas feed is used to supply gas from the top of the reaction chamber. FIG. 3 is a schematic structural diagram of another embodiment of the present invention to solve the difference in center / edge distribution. In order to overcome the intrinsic characteristics of the gas supplied from the top (Intrinsic), that is, the curve of the air flow has a characteristic, even if the gas flow is doubled, it will not be completely solved. Referring to FIG. 3, the present invention uses a 2: 2 top gas feed to a bottom gas supply (bottom

The Gas Feed) area ratio is supplied from the top and bottom of the reaction chamber. Referring to Fig. 3, the gas enters the reaction chamber from a central jet or nozzle at the top of the reaction chamber 22 and both sides of the bottom. The control valve 26 independently controls the output flow of the split gas according to a formula entered to compensate for the center / edge difference. The control valve 26 first divides the gas output from the mixing unit 24, and controls the output flow of each divided gas according to a gas branch flow ratio formula. 'The gas is released to the reaction chamber by the top gas supply and the bottom gas supply.' The wafer 11 is plasma-etched (4CVI) chemical vapor deposition. Some processes are not asymmetric to one side, that is, the edge / side difference in the reaction chamber; it may be the result of the previous process or the wafer passage or side pumping of the machine itself. Caused. In this case, it is difficult to compensate for the asymmetry difference between the sides of the reaction chamber. In order to solve this problem, please refer to FIG. 4, the present invention proposes another

〇503 * 6498TWF; TSMC2001-0198; Hui.ptd Page 8 ^ 7140 V. Description of the invention (6) ~ --- --- Real examples. The control valve divides the output air flow into the central zone 1 and the edge zones 2, 4 and 5, and the control valves each control the flow. The area ratio of the center and the top can be different according to needs, such as 1 ·· 5, 2 ·· 5 or 3 ·· 5 and so on. As shown in Fig. 4, the present invention uses the area ratio of the center and the entire top of the 1: 5 area as an example. The tributary gas released from each zone is injected into the reaction chamber 32 through the input control valve = proportional formula. For example, when the airflow is released, area 3 is a flow, and areas 1, 2, 4, and 5 are another flow. To compensate on that side, adjust the gas tributary flow on that side, so plasma etching or CVD chemical vapor deposition is performed on the wafer uniformly. Another method to adjust the gas branch flow rate is to use different gas supply units to supply different gases, as shown in Figure 5. The gas supply device 50 includes gas supply units 52 and 54 for output control of the gas A, respectively; wherein the gases A, B and C are a mixture of the oxygen gas 1, 2 and 3. In the plasma processing system for supplying gas at the top or top / bottom of the present invention, the gas supply units 52 and 54 in FIG. 5 are used to replace the control valve ι6 in FIG. 2 to control the output of the gas tributary flow to achieve the above-mentioned uneven and symmetrical compensation effect. In addition, the embodiment of FIG. 5 described above can be applied to the plasma processing system for supplying oxygen at the top / bottom of FIG. 3. The above supply gas can be a single gas or a mixed gas, such as: hydrogen bromide (HBr) and silane (S i H4). ° The plasma processing system of the present invention is suitable for plasma plasma etching and chemical vapor deposition (Chemical Vapor Deposition) processing procedures of integrated circuit (IC) production processes. Therefore, the plasma processing system provided by the present invention has Adjustable elasticity. First, the etching rate of the center / edge needs to be adjustable separately

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This is the special case = two special: the whole brother is like: at the trachea, the master needs to have the ability to compensate for the-process caused by the previous process: = uniform,-fruit. The material of the uneven sentence, such as catching and saying; changing, on the other hand, the machine A. Although the present invention is adjusted with a heart == air holes and so on.疋 In the present invention, anyone who is familiar with this technique = above, but it is not intended to be used within the scope and range. When it can be done a little S = away from the fine scope of the present invention. When both of the attached patent scopes are attached = the present invention Of 4

Claims (1)

49714U 6. The scope of the patent application is applicable to the plasma process system for the production of integrated circuits, including. Two gas supply devices for supplying a plurality of gas tributaries, and individually controlling the output flow of the $ Si fluoride tributaries; and reactions A chamber having a plurality of areas for the tributary output of these different output streams. 2. If a plasma processing system is suitable for the production of integrated circuits, as described in item 1 of the scope of patent application, these gas tributaries may be mixed gases. For example, the plasma process system applicable to the production of integrated circuits for item 1 of the patent scope, wherein the gas supply device includes a shunt control unit 'for shunting the supplied gas, and according to an input (Key_In) formula ), Adjust the respective output flow of these gas tributaries. 4. If the electric polymerization process system suitable for the production of integrated circuits is applied in item 1 of the scope of the patent application, in which the gas tributaries are supplied by a top gas feed from the center of the top of the reaction chamber and the two surrounding areas Released into the reaction chamber separately. 5. If the patent application scope item 1 applies to the electropolymerization process system for the production of integrated circuits, where the gas tributary adopts the Top Gas Feed, the top 10 of the reaction chamber and its surroundings are divided according to the proportion. Individual output in the plural area. 6. If the patent application scope item No. 5 is applicable to an electropolymerization process system for manufacturing integrated circuits, the top of the reaction chamber is divided into 5 zones according to the proportion of daytime, and the branch gas output of each zone can be controlled independently. 7. If a plasma processing system is suitable for the production of integrated circuits, as described in item 1 of the scope of patent application, these gas tributaries are supplied with top gas (Top 497140 Gas Feed) and bottom gas supply (bottom gas feed) The top central area of the chamber and the two sides of the bottom of the reaction chamber are output. Tian Yiying 8. If the patent application scope item 2 is applicable to a slurry process system for producing integrated circuits, wherein the gas supply device includes a plurality of gas supply positions for supplying different output flow gases to ^ Tributary output. ~ 4 Brother Kong 9 · If the plasma processing system for the production of integrated circuits is applied for item 8 in the scope of patent application, these gases can be mixed; gas. 10. If the plasma loading system for the production of integrated circuits is applied for item 8 of the scope of the patent application, the gas tributaries are supplied from the top gas supply (τ〇ρ as Feed), from the center and surrounding of the top of the reaction chamber The two circles are output separately. 1 ^ If the plasma processing system for the production of integrated circuits is applied to item 8 of the scope of the patent application, the gas flow is taken from the top gas supply (T0p Gas Feed), which is drawn from the center of the top of the reaction chamber and the surrounding area in proportion. Individual output in the plural area. 12. If the plasma processing system for the production of integrated circuits is applied to item 10 of its patent application scope, its +, the top of the reaction chamber is divided into 5 zones according to the proportion, and the output gas flow of each zone can be controlled independently. / 3 · The plasma process system applicable to the production of integrated circuits, as described in item 8 of the scope of the patent application, in which these gas tributaries adopt a top gas supply (τ〇ρ as Feed) and a bottom gas supply (B〇tt〇 m Gas Feed), which is output from the top central area and the bottom sides of the reaction chamber. μ 14 · If the first scope of the patent application is applicable to the production of integrated circuits, 497140 6. Scope of patent application Plasma manufacturing system. The plasma manufacturing system is a plasma manufacturing system for plasma etching and chemical vapor deposition (CVD) in the integrated circuit production process. 0503-6498TW; TSMC2001-0198; Hui.ptd Page 13