經濟部智慧財產局員工消費合作社印製 498482 A7 —--；---—_B7___ 五、發明說明（） 發明領媸： 本發明在廣義上與從一半導體處理室内之一基材支 ^座上將一基材舉起（如解除吸附）的方法和設備有關。 發明背景： &晶I員示器或平面顯示器是常用的主動式矩陣顯示 & ’如電腦與與電視使用之監視器。一般來說，平面顯 示抑至^包括有兩玻璃板，而一液晶材料層夾於該兩板 之間。至少其中之一玻璃板上至少具有一導電薄膜，其 與一電源連接。電源從電源供應器供予該導電薄膜，可 改變液晶材料的方向，產生一有圖案的顯示畫面。電漿 增強式化學氣相沈積法（PECTVD)為一經常用以產生平 面板的製程。 電漿增強式化學氣相沈積通常是用來在於一基材上 沈積薄層’例如在一平面顯示器或半導體晶圓片上。電 漿增強式化學氣相沈積通常是藉由將一前導氣體？丨入容 納有一基材的一真空處理室來完成。前導氣體通常被導 引通過設置接近該處理室頂端的一分配盤。該處！室内 的前導氣體藉由從與該處理室連接的一或更多射頻源施 加射頻電源而被加以能量（如被激發），並因此形成電繁 當基材被放置於一受熱基材支撐座上時，該激發氣^^產 生反應，並在基材的一表面上形成一材料層。〜迷蔽t 架可提供在該支撐座上，以防止基材邊緣上形成沈積， 藉以避免基材黏附至支撐座座上。此時，一淨化氣體可 選擇性提供於其中，以避免沉積物沾及基材背部，％ , 即使 氣體透過支撐座座上的洞而於基材邊緣流動，藉以_ _ 沉積物。此外，一排出系統亦提供其中，用以從讀處玉里 第5頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---------1----^ 11--------^ --------- (請先閱讀背面之注意事項再填寫本頁) 498482 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 室中.將反應期間所產生易揮發副產物抽出。 在沈積過程之後’利用設置於基材支撐座上之複數 個抬升插鞘從基材支撐座上舉起該基材（如解除吸附）。這 些抬升插鞘被啟動向上動作，以接觸基材的背面，並將 基材舉升至高於基材支撐座上表面的位置。在這個位置 時，一基材傳送機構（一般為一承載盤與一機械人的耦合 體）可設置在基材和基材支撐座之間。這些抬升插鞘縮 回，留下基材於傳送機構上，以從處理室中移走該基材。 在沈積過程期間，基材可因一些殘留作用而為基材 支撐座所吸住。例如在電漿處理期間，由於電漿内的離 子和電子間移動率不同，電荷一般會在基材上累積。一 般來說，活躍性和移動率愈高的電子能到達基材的數目 較離子者為多，如此便造成淨電荷累積。由於基材表面 上累積的電子與電漿相面對，因此基材背面有相應之正 電荷累積產生，基材和基材支撐座之間便存有一靜電吸 力作用。 當抬升插鞘開始將基材從基材支撐座抬離時，基材 的中心區域（即抬升插鞘間的區域）仍與基材支撐座相 吸，基材將因此而彎曲。隨著抬升插鞘繼續移動而更遠 離基材支撐座、並在基材與基材支撐座相隔一段距離， 後，基材離開支撐座基材的力量克服了靜電吸力，基材 的外形便得恢復成一大致平面狀或輕微彎曲狀。 然而，若靜電吸力在解除吸附過程期間中大至某一 程度，那麼在基材與基材支撐座完全分離以前，基材會 過度彎曲，如此基材可能會破裂或破損，或者其它種^ 的破壞作用亦可能發生，並因此傷及基材和/或基材上的 材料層或裝置。此外，基材若過度彎曲時，抬升插鞘可 第6頁 本紙張尺度適用中國國家標準（CNSM4規格（210 X 297公爱) -------- -----^；--------------^---------線 (請先閱讀背面之注意事項再填寫本頁) 498482 經濟部智慧財產局員工消費合作社印製 A7 ----—--- B7 ___ 五、發明說明（） 能在基材背部上輕微滑動，如此將會刮傷基材、並增加 微粒產生的可能性，這些微粒可能污及基材或後續在該 處理室中將處理的其它基材。 在解除吸附過程期間，若在處理室中導入一非活性 氣體所形成的電聚將可消除靜電吸力，因電漿能將基材 上的電荷重新分佈，藉以使基材和基材支撐座之間的靜 電吸力減至最少。美國專利5 3 8〇,566(1 995年6月1〇日通 過，Robertson等人所發明者）中即揭露一種用以減少靜電 吸力的方法。該案中，雖然在非活性氣體形成的電漿下 暴露兩秒鐘就足以消除靜電吸力、並容許基材離開吸附 狀態而不受到損害，但一般仍希望在使處理該基材的步 驟盡可能地少、並在處理中對消耗品（如氣體）的使用降至 最低的條件下進行基材的處理。 综上所述，一種在解除吸附期間可防止基材過度彎 曲基材支撐座確有其提出的必要。 發明目的及概述： 就本發明的一態樣言，所提出者為一種在處理期間 用以支撐一基材的基材支撐座組件。在一實施例中，一 支撐座組件包括一具有一支撐表面的基材支撐座、一第 一組抬升插鞘及一第二組抬升插鞘，其中後兩者以可移 動的方式插設於基材支撐座處。當這些插鞘位於一啟動 位置時，第一組抬升插鞘和第二組抬升插鞘會從支撐座 表面伸出。在啟動位置時，第一組抬升插鞘從支撐座表 面伸出的距離較第二組抬升插鞘者為大。在另一實施例 中，一支撐座組件包含一抬升盤，該抬升盤在與第二組 抬升插鞘接觸之前先與第一組抬升插鞘接觸。 第7頁 本紙張尺度適用中國國家標準（CNS)A4規格(210x5公釐) ----Ί!··------- 丨訂---------線 (請先閱讀背面之注意事項再填寫本頁) 498482 A7 B7 五、發明說明（） 在本發明的另一態樣中，所提供者為一種從一基材支 撐座上解除一基材之吸附狀態的方法。在—實施例中，該 方法包括從基材支撐座一表面上將第一組抬升插鞘伸出 一第一距離以抬起一基材、並從基材支撐座一表面上將第 二組抬升插鞘伸出一第二距離的步驟，其中該第二距離小 於該第一距離。在另一實施例中，若基材彎曲程度大於一 預定量時，第二組抬升插鞘會接觸該基材。 圖式簡軍說明： 藉由下述詳細說明及所附之圖示後，本發明之教示 内各將變彳于易於瞭解，其中： 第1圖描繪本發明之處理室之一實施例的—局部剖面 圖。 第2 A圖為一基材之一實施例的一局部放大剖面圖，其中 該基材正從一基材支撐座上抬起。 第2B圖為一基材之一實施例的一局部放大剖面圖，其中 該基材正從一基材支撐座上抬起，且該基材寶曲 的程度甚於其正常下垂程度。 第3圖為一基材之一實施例的一局部放大剖面圖，其中該 基材正處於支撐座上方之一抬升位置。 第4圖為一解除吸附過程的流程圖。 第5圖為一基材之另一實施例的一局部剖面圖，其中該基 材正從一基材支撐座上抬升。 為使諸圖式易於理解，各圖中相同部份皆以相同參考 數字代表之。 1_號對照說明： 第8頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ·· 訂---------—線- 經濟部智慧財產局員工消費合作社印製 498482 A7 B7 五、發明說明（ 經濟部智慧財產局員工消費合作社印製 10 0 化學氣相沈積系統 102 處理室 104 氣體來源 106 牆 108 底部 110 蓋子組件 112 處理區域 114 泵氣室 118 分配盤 120 内部側面 1 2 6, 5 3 0 底側 128 洞 130 電源 132 加熱零件 1 34, 528 支撐座表面 1 3 8, 5 0 2 支撐座組件 140 基材 142 桿 146 風箱 148 遮蔽框架 150,152, 506,520 抬升插鞘 154, 512 抬升盤 156 軸環 1 60, 1 62, 508, 522 第一, 1 64, 1 66, 5 1 0, 524 第二末端 168 上部份 170 下部份 180 第一組 182 第二組 5 0 0電漿增強化學氣相沈積系統 5 0 2 支撐座組件 506 抬升插鞘 508 第一末端 510 第二末端 512 抬升盤 514 中心部份 516 緣 520 抬升插鞘 5 2 2 第一末端 524 第二末端 528 支撐座表面 580 第一組抬升插鞘 5 8 2 第二組抬升插鞘 第9頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） --------7-------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 498482 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 發明詳細說明： 就整體而言，本發明提出一種基材支撐座和一種用 以解除一基材之吸附狀態的方法，以有助於從一基材支 撐座上抬起一基材。本發明將利用一電漿增強式化學氣 相沈積系統而舉圖說明如下，其中該電裝增強式化學氣 相沉積系統可為美國加州應用材料公司AKT部門製造 者。然而’本發明仍可應用於其它系統架構中，如可應 用於物理氣相沈積系統、離子植入系統、姓刻系統、化 學氣相沈積系統和任何其它須將基材從支撐座上舉起之 系統中。 第1圖是電漿增強式化學氣相沉積系統丨〇〇 一實施 例的剖面圖《系統1 00通常包括與一氣體來源丨〇4連接 的一處理室102。處理室1〇2有牆1〇6、一底部1〇8和一 蓋件no，這些組件102，106，110用以界定一處理區U2 之所在位置。牆106上通常設以一進出口（未顯示），以使 外界彳于以對该處理區1 1 2加以動作，即基材3 4 0得藉由 該處進入和離開處理室1〇2。牆1〇6和底部1〇8 一般係以 鋁單塊體製成。蓋件110包括有一泵氣室（pumping PUnUm)114，後者將處理區112耦合至一排出口（包括各 種泵零件，未顯示）。 蓋件11 〇由牆106支撐，並能被移去而使處理室i 〇2 内得為外界加以動作。蓋件110it常由紹構成，並可額 外包含熱轉移流體通道’以藉&使熱轉移流體流動於蓋 件中而控制蓋件1 1 0的溫度。 使刀配盤1 1 8與蓋件1 1 〇的一内部側面1 2 〇連接，且 分118通常由鋁構成。分配盤118一般包括有一圍向 支鉻衣該支撐環包圍一"盤形’’中心部份。該支撐環圈 第10頁 (請先閱讀背面之注意事項再填寫本頁) ·· --訂-------- :線丨--*-----：---^------------- 498482 , A7 ______ B7 五、發明說明（） 中有複數個支撐洞貫穿其中，且每一洞皆可接受一支撐 螺絲穿入其中，以使每一螺絲得栓入蓋件1 1 〇中所相對之 相配孔中。中心部份包含一具排孔的區域，即該等排孔 遍設於該區域内，以將氣體來源1 04所供給的處理和其它 氣體送至處理區11 2。分配盤1 1 8之有孔區域的設置目的 在於將經過分配盤1 1 8傳至處理室1 〇2内的氣體加以均勻 分配。 一被加熱的支撐座組件1 3 8被設置在處理室1 〇2内中 心處。在處理期間支撐座組件1 3 8支撐一基材1 40。支撐 座組件1 3 8 —般是由鋁、陶瓷或鋁與陶瓷的化合物構成， 並通常包括一真空口（未顯示）和至少一嵌入式的加熱零 件132。真空口的作用為在基材14〇和支撐座組件138之間 產生一真空環境，以在處理期間使基材穩固貼住基材支 撐座組件1 3 8。加熱零件1 32(如設於支撐座組件1 3 8中的 一電極）與一電源1 3 0相接，以將支撐座組件1 3 8和置於其 上之基材1 40加熱至一預定的溫度。在一實施例中，加熱 零件132將基材140溫度維持在150至400°C之間，且該溫 度對基材1 4 0各處為均勻者。此外，基材之加熱亦可以加 熱燈或其它熱來源為之。 一般而言，支撐座組件1 3 8與一桿1 42相接，其中桿 1 4 2為系統1 〇 〇之支撐座組件1 3 8和其它零件之間的導 管，用以作為電引線、真空和氣體供應線。桿142連接支 撐座組件1 3 8至一抬升系統（未顯示），其中後者能使支撐 座組件1 3 8在一被提升位置（如同所顯示）和一被降低位置 之間移動。風箱146在處理室區域1 12和在處理室1〇2外的 大氣之間提供一真空密封作用，以有利於支撐座組件1 3 8 的移動。 第11頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ···丨丨 訂---------線. 經濟部智慧財產局員工消費合作社印製 498482 A7Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 498482 A7 ---; --- --- B7___ 5. Description of the invention () Invention collar: The present invention is broadly related to a substrate support in a semiconductor processing room. The method and equipment for lifting a substrate (such as desorption) are related. Background of the invention: & Crystal display or flat panel display is a commonly used active matrix display & ' such as computer and television monitors. In general, the flat display includes two glass plates, and a layer of liquid crystal material is sandwiched between the two plates. At least one of the glass plates has at least one conductive film connected to a power source. Power is supplied to the conductive film from a power supply, which can change the direction of the liquid crystal material and produce a patterned display screen. Plasma enhanced chemical vapor deposition (PECTVD) is a process often used to produce flat panels. Plasma-enhanced chemical vapor deposition is commonly used to deposit a thin layer 'on a substrate, such as on a flat panel display or a semiconductor wafer. Plasma-enhanced chemical vapor deposition is usually performed by using a precursor gas?丨 Finished in a vacuum processing chamber containing a substrate. The pilot gas is usually directed through a distribution disk disposed near the top of the processing chamber. Somewhere! The leading gas in the room is energized (if excited) by applying radio frequency power from one or more radio frequency sources connected to the processing chamber, and thus forms an electric fan. The substrate is placed on a heated substrate support. At this time, the excited gas generates a reaction, and a material layer is formed on a surface of the substrate. ~ A concealed t-frame can be provided on the support base to prevent deposits from forming on the edge of the substrate, thereby avoiding the substrate from sticking to the support base. At this time, a purge gas can be selectively provided therein to prevent the deposits from sticking to the back of the substrate, even if the gas flows through the holes in the support seat and flows on the edge of the substrate, thereby deposits. In addition, a discharge system is also provided for reading from page 5 of Yuli. The paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) --------- 1 --- -^ 11 -------- ^ --------- (Please read the notes on the back before filling out this page) 498482 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Explanation () In the chamber, the volatile by-products generated during the reaction are extracted. After the sedimentation process', the substrate is lifted from the substrate support (such as desorption) by using a plurality of lifting hosels provided on the substrate support. These lifting hosels are activated to contact the back of the substrate and lift the substrate above the upper surface of the substrate support. In this position, a substrate transfer mechanism (typically a coupling body of a carrier plate and a robot) can be placed between the substrate and the substrate support. These lifted sheaths retract, leaving the substrate on a transfer mechanism to remove the substrate from the processing chamber. During the deposition process, the substrate can be held by the substrate support due to some residual effects. For example, during plasma processing, charges generally accumulate on the substrate due to different mobilities between ions and electrons in the plasma. In general, the more active and mobile the electrons can reach the substrate than the ions, the more the net charge is accumulated. Since the accumulated electrons on the surface of the substrate face the plasma, a corresponding positive charge is generated on the back surface of the substrate, and an electrostatic attraction exists between the substrate and the substrate support. When the lifting sheath starts to lift the substrate away from the substrate support, the central area of the substrate (that is, the area between the lifting sheaths) is still attracted to the substrate support, and the substrate will bend accordingly. As the lifting sheath continues to move further away from the substrate support, and the substrate is separated from the substrate support by a distance, the force of the substrate leaving the substrate overcomes the electrostatic attraction, and the shape of the substrate is obtained. Return to a generally flat or slightly curved shape. However, if the electrostatic attraction is large to some extent during the desorption process, before the substrate is completely separated from the substrate support, the substrate may be excessively bent, so that the substrate may be cracked or damaged, or other kinds of ^ Destructive effects can also occur and thus damage the substrate and / or material layers or devices on the substrate. In addition, if the substrate is excessively bent, the sheath can be lifted on page 6. The paper dimensions are applicable to Chinese national standards (CNSM4 specification (210 X 297 public love) -------- ----- ^;- ------------ ^ --------- line (Please read the precautions on the back before filling out this page) 498482 Printed by A7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs- ------ B7 ___ V. Description of the invention () It can slide slightly on the back of the substrate, which will scratch the substrate and increase the possibility of particles, which may stain the substrate or subsequently Other substrates to be processed in the processing chamber. During the desorption process, if the electropolymerization formed by introducing an inert gas into the processing chamber will eliminate electrostatic attraction, because the plasma can redistribute the charge on the substrate, This minimizes the electrostatic attraction between the substrate and the substrate support. US Patent 5,380,566 (passed on June 10, 1995, inventor of Robertson et al.) Discloses a method for Method to reduce electrostatic attraction. In this case, although two seconds of exposure to plasma formed by inert gas is enough to eliminate electrostatic attraction, and The substrate is allowed to leave the adsorbed state without being damaged, but it is generally desirable to perform the substrate under conditions that minimize the number of steps required to handle the substrate and minimize the use of consumables (such as gases) during processing. In summary, it is necessary to propose a substrate support base which can prevent the substrate from being excessively bent during the desorption period. Purpose and Summary of the Invention: As one aspect of the present invention, the present invention is a kind of A substrate support base assembly for supporting a substrate during processing. In one embodiment, a support base assembly includes a substrate support base having a support surface, a first set of lifting sheaths and a second set of lifting The hosel, the latter two of which are inserted in a movable manner at the base support seat. When these hosel sheaths are in an activated position, the first group of lifted sheaths and the second group of lifted sheaths extend from the surface of the support In the starting position, the distance of the first group of lifting sheaths protruding from the surface of the support seat is greater than that of the second group of lifting sheaths. In another embodiment, a support seat assembly includes a lifting disc, the lifting In and out The two groups of lifting sheaths should be in contact with the first group of lifting sheaths before coming into contact. Page 7 This paper size applies Chinese National Standard (CNS) A4 (210x5 mm) ---- Ί! ·· ----- -丨 Order --------- Line (Please read the precautions on the back before filling out this page) 498482 A7 B7 V. Description of the invention () In another aspect of the invention, the provider is A method for releasing the adsorption state of a substrate from a substrate support base. In an embodiment, the method includes extending a first group of lifting plugs from a surface of the substrate support base by a first distance to lift The step of lifting a substrate and extending a second group of lifted sheaths from a surface of the substrate support base by a second distance, wherein the second distance is smaller than the first distance. In another embodiment, if the degree of curvature of the substrate is greater than a predetermined amount, the second group of raised hosers will contact the substrate. Brief description of the drawings: With the following detailed description and accompanying drawings, the teachings of the present invention will become easy to understand, where: Figure 1 depicts one embodiment of the processing room of the present invention— Partial sectional view. Figure 2A is a partially enlarged sectional view of an embodiment of a substrate, wherein the substrate is being lifted from a substrate support. Figure 2B is a partially enlarged cross-sectional view of an embodiment of a substrate, in which the substrate is being lifted from a substrate support, and the degree of the substrate is higher than its normal sagging degree. Fig. 3 is a partially enlarged sectional view of an embodiment of a substrate, wherein the substrate is in a lifting position above a support base. Figure 4 is a flowchart of a desorption process. Figure 5 is a partial cross-sectional view of another embodiment of a substrate, wherein the substrate is being lifted from a substrate support. To make the drawings easier to understand, the same parts in each figure are represented by the same reference numerals. Comparative description of No. 1_: Page 8 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) ·· Order ------ ----- Line-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 498482 A7 B7 V. Description of the Invention (Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 10 0 Chemical Vapor Deposition System 102 Processing Room 104 Gas Source 106 Wall 108 Bottom 110 Cover assembly 112 Processing area 114 Pump air chamber 118 Distribution plate 120 Inside side 1 2 6, 5 3 0 Bottom side 128 holes 130 Power supply 132 Heating parts 1 34, 528 Support surface 1 3 8, 5 0 2 Support assembly 140 Base material 142 Rod 146 Bellows 148 Covering frame 150,152, 506,520 Lifting sheath 154, 512 Lifting disc 156 Collar 1 60, 1 62, 508, 522 First, 1 64, 1 66, 5 1 0, 524 Second End 168 Upper part 170 Lower part 180 First group 182 Second group 5 0 0 Plasma enhanced chemical vapor deposition system 5 0 2 Support seat assembly 506 Lifting sheath 508 First end 510 Second end 512 Lifting disc 514 Central part 516 edge 520 Lifting sheath 5 2 2 First end 524 Second end 528 Support seat surface 580 The first set of lifting sheaths 5 8 2 The second set of lifting sheaths Page 9 This paper applies Chinese National Standard (CNS) A4 specifications (210 X 297 Meal) -------- 7 ------------- Order --------- line (Please read the precautions on the back before filling this page ) 498482 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Detailed description of the invention: As a whole, the present invention proposes a substrate support and a method for releasing the adsorption state of a substrate In order to help lift a substrate from a substrate support base, the present invention will use a plasma enhanced chemical vapor deposition system to illustrate the following, wherein the electrical enhanced chemical vapor deposition system can be Manufactured by the AKT division of California Applied Materials. However, the present invention can still be applied to other system architectures, such as physical vapor deposition systems, ion implantation systems, engraving systems, chemical vapor deposition systems, and any Other systems that require the substrate to be lifted from the support. 1 Is a plasma enhanced chemical vapor deposition system Shu thousand and a cross-sectional view of the embodiment of "System 100 generally comprises a process chamber 102 is connected to a source of gas Shu 〇4. The processing chamber 102 has a wall 106, a bottom 108 and a cover no. These components 102, 106, 110 are used to define a location of a processing area U2. The wall 106 is usually provided with an entrance and exit (not shown) so that the outside world can act to act on the processing area 1 12, that is, the substrate 3 40 has to enter and leave the processing room 10 2 there. The walls 106 and bottom 108 are generally made of aluminum monolith. The cover 110 includes a pumping PUnUm 114 which couples the processing area 112 to a row of outlets (including various pump parts, not shown). The cover 11 〇 is supported by the wall 106 and can be removed so that the inside of the processing chamber 〇 2 can be operated for the outside. The cover member 110it is often composed of a shawl, and may additionally include a heat transfer fluid channel ' to control the temperature of the cover member 110 by allowing the heat transfer fluid to flow in the cover member. The knife plate 1 1 8 is connected to an inner side 1 2 0 of the cover member 1 10, and the portion 118 is usually made of aluminum. The distribution plate 118 generally includes a chrome support which surrounds a " disk-shaped ' The support ring page 10 (Please read the precautions on the back before filling out this page) ·· --Order --------: Line 丨-* -----: --- ^- ------------ 498482, A7 ______ B7 V. Description of the invention () There are a plurality of support holes running through it, and each hole can accept a support screw to penetrate into, so that each The screw must be bolted into the corresponding matching hole in the cover member 1 10. The central part contains an area with perforations, that is, the perforations are arranged in this area in order to send the processing and other gases supplied by the gas source 104 to the processing area 112. The purpose of setting the perforated area of the distribution plate 1 1 8 is to evenly distribute the gas passed through the distribution plate 1 1 8 to the processing chamber 1 102. A heated support base assembly 138 is disposed at the center of the processing chamber 102. The support base assembly 1 3 8 supports a substrate 1 40 during processing. The support base assembly 1 38 is generally made of aluminum, ceramic or a compound of aluminum and ceramic, and usually includes a vacuum port (not shown) and at least one embedded heating element 132. The function of the vacuum port is to create a vacuum environment between the substrate 14 and the support base assembly 138 to firmly hold the substrate against the substrate support base assembly 138 during processing. The heating part 1 32 (such as an electrode provided in the support base assembly 1 38) is connected to a power source 130, so as to heat the support base assembly 1 38 and the substrate 1 40 placed thereon to a predetermined level. temperature. In one embodiment, the heating part 132 maintains the temperature of the substrate 140 between 150 and 400 ° C, and the temperature is uniform for the substrate 140. In addition, the substrate can also be heated by heating lamps or other heat sources. Generally speaking, the support base assembly 1 38 is connected to a rod 1 42. The rod 1 42 is a conduit between the support base assembly 1 38 of the system 1000 and other parts, and is used as an electrical lead and a vacuum. And gas supply lines. The rod 142 connects the support assembly 138 to a lifting system (not shown), wherein the latter enables the support assembly 138 to be moved between a raised position (as shown) and a lowered position. The bellows 146 provides a vacuum seal between the processing chamber area 112 and the atmosphere outside the processing chamber 102 to facilitate the movement of the support seat assembly 1 3 8. Page 11 This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) Line. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 498482 A7
五、發明說明（） 支撐座組件1 3 8通常是接地的，以使電源i 3 〇供給、 並送至分配盤1 18(或處理室蓋件内或鄰近之其它電極^的 射頻（RF)功率可激化在支撐座組件138和分配盤之間 之處理區11 2中的處理氣體。射頻電源之頻率通常為數赫 玆至1 3百萬赫茲之間或更高，瓦特數則為基材表面區域 所適於接受者。在一實施例中，電源i 22至少包捂一雙頻 源’其中低頻源之頻率小於約2百萬赫茲（2〇〇至50〇仟赫 兹更佳），而高頻源者則為大於13百萬赫茲（約13·56仟赫 兹更佳），且該等頻率可為固定或可變的。對於一 55〇mm χ 680mm尺寸之基材而言，低頻源約為〇 ·3至約2仟瓦特，而 南頻源則為1至5仟瓦特。一般而言，電源之需求係隨基 材尺寸之增減而增減^ 支撐座組件138另還支撐一外圍區遮蔽框架148。遮 蔽框架148設置成得以覆蓋基材140的邊緣，其一般由陶 €製成。通常，遮蔽框架148能防止在基材140和支撑座 組件1 3 8邊緣的沈積，因此基材不會黏附在支撐座組件 138上《此外，在遮蔽框架ι48與支撐座組件138之間可選 擇性加以一淨化氣體，以幫助防止在基材邊緣上的沈 積。 支撐座組件1 3 8中有複數個洞1 2 8穿設其中，以使複 數個抬升插鞘150得插設於該等洞128中，其中該等抬升 插鞘1 5 0包含一第一組抬升插鞘1 8 0和一或更多的其它抬 升插鞘1 5 2，其中後者包含一第二組抬升插鞘1 8 2。抬升 插鞘1 52之第二組1 82以輻射樣式排列設置，並在輻射向 上較抬升插鞘1 5 0之第一組1 8 0靠近中央。一般而言，抬 升插鞘1 50和1 52 —般係由陶瓷或電鍍鋁製成。通常，抬 升插鞘150和152有其各自的第一末端160和162，當抬升 第12頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） 广請先聞讀背面之漆意箏頊存填寫本頁) tr---------線' 經濟部智慧財產局員工消費合作社印製 A75. Description of the invention () The support base assembly 1 3 8 is usually grounded, so that the power supply i 3 〇 is supplied and sent to the distribution plate 1 18 (or other electrodes in or adjacent to the processing chamber cover). The power can intensify the processing gas in the processing area 112 between the support block assembly 138 and the distribution plate. The frequency of the RF power source is usually between a few hertz and 13 million hertz or higher, and the wattage is the substrate surface area Suitable receiver. In one embodiment, the power source i 22 covers at least one dual-frequency source, wherein the frequency of the low-frequency source is less than about 2 million hertz (more preferably from 200 to 50 MHz), and the high-frequency source is It is greater than 13 million hertz (about 13.56 Hz is better), and these frequencies can be fixed or variable. For a substrate of a size of 55 mm x 680 mm, the low frequency source is about 0 · 3 to about 2 仟 watts, and the frequency of the South frequency source is 1 to 5 仟 watts. Generally speaking, the power requirements increase and decrease as the size of the substrate increases and decreases ^ The support base assembly 138 also supports a peripheral area shielding frame 148. The shielding frame 148 is provided so as to cover the edge of the substrate 140, which is generally made of ceramics. In general, the shielding frame 148 can prevent deposition on the edges of the substrate 140 and the support base assembly 138, so the substrate will not adhere to the support base assembly 138. Moreover, between the shielding frame 148 and the support base assembly 138 A purge gas can be optionally added to help prevent deposition on the edge of the substrate. The support seat assembly 1 3 has a plurality of holes 1 2 8 therethrough, so that a plurality of lifting sheaths 150 can be inserted in the support seat assembly 1 3 8. In the equal hole 128, the lifting hosel 1 50 includes a first group of lifting hosel 1 8 0 and one or more other lifting hosel 1 5 2, wherein the latter includes a second group of lifting hosel 1 8 2. The second group 1 82 of the lifted sheath 1 52 is arranged in a radiating pattern, and is closer to the center than the first group 1 8 0 of the lifted sheath 1 50 0. Generally speaking, the lifted sheath 1 50 And 1 52—usually made of ceramic or anodized aluminum. Generally, the lifting hosel 150 and 152 have their respective first ends 160 and 162. When lifting, page 12 This paper applies Chinese National Standard (CNS) A4 specifications (210 χ 297 mm) Please read and read the lacquer on the back to fill in this page) tr-- ------- Line 'Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7
498482 五、發明說明（） 插鞘150和152位於一正常位置時（即相對於支撐座組件 138為縮回之位置），該等第一末端16〇，162大致與支撐座 組件1 3 8的一支撐座表面1 3 4齊平或稍微内凹。第一末端 1 60,1 62通常呈喇叭狀，用以防止抬升插鞘15〇 , 152在洞 1 2 8中落下。此外’抬升插稍1 5 〇和1 5 2還有其各自之第二 末端164和166，該第二末端164,166伸出支撐座組件138 的一底側1 2 6之外。 當抬升插鞠1 5 0和1 5 2被啟動時可移動到突出該支撐 座表面130上的一位置。在啟動的位置，抬升插鞘15〇突 出支撐座表面134之距離較該一或更多抬升插鞘m為 运。通常’抬升插鞘1 5 0的第一組1 8 〇包括有三或更多的 抬升插鞘，設置於該一或更多抬升插鞘！ 52的外側。在一 貫施例中’抬升插鞘1 5 〇的第一組1 8 0包括有成對出現的 八個插鞘，其中每一對分別設置於接近一四邊基材之每 一相對邊的位置。在另一實施例中，抬升插鞘1 5 2的第二 組1 8 2包括兩個抬升插鞘，設置於支撐座組件m之一中 心的兩邊。 一抬升盤1 5 4被設置於接近支撐座表面的底側1 2 6 處’並位於該一或更多抬升插鞘15〇和152之第二末端164 和166的下方。該抬升盤154連接至設置於處理區U2外部 的一致動器，如一氣壓缸、液壓缸、螺線管、步進馬達 或其它的傳動裝置（未顯示）。抬升盤1 54在與該致動器之 連接係藉由外接於桿1 42之一部份的一軸環1 56為之。風 細138包括有一上部份168和一下部份17〇，以使桿 轴環156在處理區處理室ι〇2對環境外部n2的隔離的條 件下得以獨立移動。或者，抬升盤1 5 4和支撐座組件1 3 8 的運動亦可在一單一致動器的控制下動作，即利用一彈 第13頁 本紙張尺度細中國國家標準(CNS)A4規格（21G X 297公餐） (請先閱讀背面之注意事項再填寫本頁) > .· n I n ϋ n n n^eJ· n n n n n «I n t - 經濟部智慧財產局員工消費合作社印製 498482 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明說明（） 簧和一移動阻障物控制抬升盤1 5 4或支撐座組件i 3 8之間 的相對運動。 通常’當支撐座組件138和抬升盤154互相移動至足 夠接近時’抬升盤1 5 4被啟動以使抬升插鞘1 5 〇, 1 5 2從支撐 座表面134伸出。其中，支撐座組件138與抬升盤154之靠 近動作可由降低支撐座組件138位置、抬升盤154使之向 上移動、降低支撐座組件1 3 8位置或上述動作之組合的方 式達成之，其中抬升盤154的下降速度小於支撐座138的 下降速度。 弟2A圖用以描述提升基材140離開支撐座組件138之 支撐座表面1 34的一實施例。通常，當支撐座組件1 3 8移 至較近抬升盤154之位置時，因抬升插鞘15〇的第一組ι8〇 通€較抬升插鞘1 5 2的第二組1 8 2長，故較抬升插鞘1 5 2的 第二組1 8 2先接觸抬升盤1 5 4。因此，抬升插鞘1 5 〇的第一 組180先從支撐座表面134伸出而較早接觸基材14〇 ,並因 接觸基材1 4 0的圍長邵份而將基材1 4 〇舉起。當抬升插鞘 1 5 0的弟一組1 8 〇從支撐座表面1 3 4伸出一距離”乙”時，較 短的抬升插鞘1 5 2的第二組1 8 2觸及抬升盤1 5 4，其中，，L，， 也可表示抬升插鞘1 5 0，1 5 2的長度差。在一實施例中，，，L，， 至少約為2 mm。 通常’當基材140從支撐座表面134抬起時，基材140 會產生.考曲，其中低於抬升插鞘1 5 〇平面以下的彎曲部份 被命為一下垂度，，S，，。抬升插鞘150的第一組180相對於基 材1 40中心的位置被加以設定，該設定值以使得基材下垂 度S大致較距離’ l π小為原則。影響下垂度"$，，的因素包 括基材整體尺寸、基材厚度、基材上層膜的成份、抬升 插鞘1 50之間的距離、基材溫度及其它因素。因此，當抬 第u頁 本紙張尺度適用中國國家標準（CNS)A4規格⑽χ 297公爱）----- ^---------·--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 498482 A7 B7 五、發明說明（） 升插鞘150的第一組180從支撐座表面134拾起基材14〇 時’基材140得以避免觸及抬升插鞘152的第二組182，因 為基材140被從支撐座表面134抬至更高時、抬升插鞘152 的第二組182方才開始伸出。 如第3圖所示，當基材14被從支撐座組件138完全抬 起時，抬升插鞘152的第二組182從支撐座表面134伸出一 距離D’，而抬升插鞘的第一組從支撐座表面1 34突出的距 離則為D ’’。當基材被移離支撐座表面1 3 4時，距離D，小於 距離D"。因此抬升插鞘1 5 2的第二組1 8 2仍然是與基材1 4 0 保持距離的。如此一來，當從支撐座組件1 3 8抬起基材1 4〇 時’基材140與抬升插鞘間的接觸程度能減至最小（換言 之’抬升插鞘152從不觸及基材140)，如此可減少基材140 中心部份被刮傷的可能性。 如第2B圖中所示，一基材140,和支撐座組件138之間 的殘留力量（例如靜電吸力）可能使基材丨4〇,彎曲超過第 2 A圖中表明的預定量” s ”。如果殘留力量很大、或者不能 充分卸除，那麼基材140,的下垂度”S，"就變得與抬升插鞘 1 5 0的第一組1 8 〇從支撐座表面1 3 4抬起基材1 4 0，時的距離 •’L”相等。此時，抬升插鞘152的第二組ι82與基材14〇，的 中心邵份相接觸。當抬升盤1 1 8和基材支撐座1 3 8移動得 更靠近時，抬升插鞘152的第二組182觸及基材140,。抬升 插鞘152的第二組182克服通常集中在基材的中心的殘留 吸力而抬起基材1 40’的中心部份，因而防止基材因彎曲超 過下垂度S·預定量而可能產生對基材和/或在其上所存放 的層或裝置的損害。由於基材1 40，變得與支撐座組件i 3 8 的支撐座表面134分離，基材140’不再受殘留力量的影響 而產生下垂”S，”，並從正常方向返回至虛線表示之下垂度 第15頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 --------訂-------- I — — — — — — — — — — — —— — — — — — — — — — 498482 A7 B7 五、發明說明（） ’’ S位置’其中基材1 4 0不再觸摸抬升插鞘1 5 2的第二組 182。由於抬升盤254繼續將抬升插鞘150和！ 52設置於完 全啟動的位置中，因此基材140與支撐座表面134此時以 一距離相隔，如第3圖所示。 第4圖是從一支撐座表面抬起一基材之方法4〇〇的流 程圖（如，解除吸附），其為根據本發明之一實施例進行 者。請從步驟402開始並參閱第3圖之說明，抬升插鞘1 5〇 的一罘一組180從一支撐座組件138的一支撐座表面134 伸出一第一距離Dn。在步驟404時，抬升插鞘152的一第 二組182從支撐座組件138的支撐座表面134伸出一第二 距離D’。一般來說，抬升插鞘152的第二組182在輻射向 上係位於抬升插鞘1 5 〇的第一組1 § 〇之内側。在步驟4 〇 6 時，若基材1 40和支撐座組件i 3 8之間的殘留吸力使基材 140之下垂度，，S，”（見第2B圖）等於第一和第二距離（D，，_ D’ = L)之間的差值時，抬升插鞘ι52的第二組^會接觸基 材 140。 第5圖是一電漿增強式化學氣相沈積系統5〇〇的另一 實施例。系統500通常大致與第u圖所描述的系統1〇〇相 近’不過本實施例中支撐座組件5〇2包括之抬升插鞘5〇6 的第一組5 8 0和抬升插鞘5 2 0的第二組5 8 2之長度相等。抬 升插鞘506,520各自具有一喇队狀的第一末端5〇8,522，用 來從基材支撐座502的一支撐座表面528抬起基材14〇。抬 升插鞘506,520各自具有一第二末端51〇,524,其伸出超過 基材支撐座502的一底側530。一抬升盤512設置在基材支 撐座502的下方。抬升盤512通常包括有一突出超過一中 心部份514之緣516。 當抬升盤時5 1 2被啟動而將基材i 40從支撐座表面 第16頁 本紙張又度適用中國國家標準（CNS)A4規格（210 X 297公餐 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 t----------I-.--------------------- 498482 A7 五 經濟部智慧財產局員工消費合作社印製 發明說明（) 5 2 8處抬起’抬升盤5 1 2的凸緣5 1 6會在中心部份5 1 4觸及 抬升插鞘520的第二組582之前先接觸抬升插鞘506的第 一組5 8 0。凸緣5 1 6和中心部份5 1 4之間的高度差” ”會使 ^台升插鞘5 0 6的第一組5 8 0較抬升插鞘5 2 0的第二組5 8 2先 從支撐座表面528上突出。高度差，，D”的選擇以能產生與 才u升插鞘向度差” l ’’相同之差值為原則。此外，抬升盤5 1 2 可以選擇性與相同長度的抬升插鞘506,520 一起使用。 在貫際操作時，第1圖所示的半導體基材1 4 〇可利用 一些方法加以處理。例如，為沈積一氮化矽層，首先將 一真2提供於基材140與支撐座組件138之間，以達穩固 基材140之目的。支撐座組件138被抬起，使得基材14〇和 分配盤1 18之間通常分開約5〇〇至1 000毫吋的距離。基材 140溫度被提升到一預定的處理溫度，即在攝氏15〇到4〇〇 度之間，而溫度之提升主要是由一電極丨32提供電力。氣 體透過分配盤118從一氣體面板向處理室供給，以形成一 氣體混合物，在一實施例中該氣體可能包括矽烷、氨及 氮成份。射頻電源提供在分配盤u 8與支撐座組件1 3 8之 間，以從該氣體混合物中形成一電漿，氣體混合物則反 應而在基材140上形成一氮化矽層。 經過處理之後，基材140可選擇加以電漿處理，即一 非活性氣體（即不會對基材上沉積的層膜造成不利影 響、並不會在基材上形成其它材料的氣體）所形成的電 漿，其中電漿處理的時間約為5秒鐘，以減少基材和支撐 座組件1 3 8之間的吸力。該種處理方法可見於美國專利 5,380,566中的揭露内容。 然後，支撐座組件138被降下，以能將已經處理的 材1 4 0移去。抬升盤i 5 4被啟動，以從支撐座表面i 3 4上 第17頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------^----〆—--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 基 面 498482 A7 _ B7______ 五、發明說明（） 伸出抬升插鞘152和基材140。如果支撐座表面134基材 140之間的殘留吸力使基材彎曲至一預定量，那麼抬升插 鞘152的第二組182將接觸基材140，以使基材140得以離 開支撐座表面134。一旦離開了支撐座表面134，基材140 便位在抬升插鞘1 5 0的第一組1 8 0的一位置上，即一基材 處理機械人可以進入處理室102、並重新取出基材140之 基材位置上，以在其它設備中進行下一步的處理。 若支撐座面134和基材140之間的殘留吸力不足以使 基材彎曲至距離"L"之大時，抬升插鞘152的第二組182將 絕無法接觸基材1 40，因此不會在其上留下任何印痕。 本發明在上述中係以在一電漿增強式化學氣相沈積 處理主中的行為描述之’但熟知該項技術者仍可在它種沉 積室中輕易設計出使用抬升插鞘來從一支撐座表面分離 一基材的其它不同實施例，故不脫離本發明之範圍與精 神，實皆屬於本專利所主張之權利範圍内。 (請先閱讀背面之注意事項再填寫本頁) ·· 經濟部智慧財產局員工消費合作社印製 貫 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱）498482 V. Description of the invention (1) When the sheaths 150 and 152 are in a normal position (that is, the retracted position relative to the support base assembly 138), the first ends 16 and 162 are approximately the same as those of the support base assembly 1 3 8 A support seat surface 1 3 4 is flush or slightly concave. The first ends 1 60, 1 62 are generally trumpet-shaped to prevent lifting of the sheaths 15 and 152 from falling in the holes 1 2 8. In addition, the lifting inserts 150 and 152 have their respective second ends 164 and 166, which protrude beyond a bottom side 1 2 6 of the support base assembly 138. When the lifting pins 1 50 and 15 2 are activated, they can be moved to a position protruding from the support seat surface 130. In the activated position, the distance that the lifting hosel 15 protrudes from the support seat surface 134 is greater than the one or more lifting hosel m. Generally, the first group of 180's of the lifting sheaths 1 50 includes three or more lifting sheaths, which are disposed on the one or more lifting sheaths! 52 outside. In a consistent embodiment, the first set of 'lifting hosel 1 50' includes eight hosel sheaths that appear in pairs, where each pair is located near each of the opposite sides of a four-sided substrate . In another embodiment, the second group 1 8 2 of the lifting hosel 15 2 includes two lifting hosel sheaths disposed on both sides of a center of the support base assembly m. A lifting plate 1 5 4 is disposed near the bottom side 1 2 6 of the surface of the support seat and is located below the second ends 164 and 166 of the one or more lifting sheaths 15 and 152. The lifting plate 154 is connected to an actuator such as a pneumatic cylinder, a hydraulic cylinder, a solenoid, a stepping motor, or other transmission device (not shown) provided outside the processing area U2. The lifting plate 1 54 is connected to the actuator by a collar 1 56 which is external to a part of the rod 1 42. The air duct 138 includes an upper part 168 and a lower part 170, so that the rod collar 156 can be independently moved under the condition that the processing area processing chamber ι2 is isolated from the environment outside n2. Alternatively, the movement of the lifting plate 1 5 4 and the support base assembly 1 3 8 can also be controlled by a single actuator, that is, using a single shot of page 13 of this paper, the Chinese National Standard (CNS) A4 specification (21G X 297 Public Meal) (Please read the notes on the back before filling out this page) >. · N I n nn nnn ^ eJ · nnnnn «I nt-Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs's Consumer Cooperatives 498482 Intellectual Property of the Ministry of Economic Affairs Printed by the Bureau ’s consumer cooperative A7 B7 V. Description of the invention () The relative movement between the spring and a moving obstacle to control the lifting plate 1 5 4 or the support base assembly i 3 8. Normally, when the support base assembly 138 and the lifting plate 154 are moved close enough to each other, the lifting plate 154 is activated to cause the lifting hosel 15, 15 to protrude from the support surface 134. The approaching movement of the support base assembly 138 and the lifting plate 154 can be achieved by lowering the position of the supporting base component 138, moving the lifting plate 154 upward, lowering the supporting base component 138 or the combination of the above actions, among which the lifting plate The lowering speed of 154 is lower than the lowering speed of the support seat 138. 2A is a diagram for describing an embodiment in which the lift base 140 leaves the support base surface 134 of the support base assembly 138. Generally, when the support base assembly 1 38 is moved to a position closer to the lifting plate 154, the first group of the lifting sheath 1580 is longer than the second group 1 8 2 of the lifting sheath 15 2 Therefore, the second group 1 8 2 of the lifting sheath 1 5 2 touches the lifting plate 1 5 4 first. Therefore, the first group 180 that lifted the hosel 150 first protruded from the support seat surface 134 and contacted the substrate 14 earlier, and contacted the substrate 14 by the substrate length 140. lift. When the younger group 1 of the lifting sheath 1 50 extends a distance “B” from the support surface 1 3 4, the second group 1 8 2 of the shorter lifting sheath 1 8 2 touches the lifting disc 1 5, 4, where, L, can also represent the difference in length of lifting the sheath 1 50, 15 2. In one embodiment, L ,, is at least about 2 mm. Generally, when the substrate 140 is lifted from the support seat surface 134, the substrate 140 will be produced. The test curve, in which the curved portion below the 150 ° plane of the lifted sheath is designated as a sag ,, S ,, . The position of the first group 180 of the lifting sheath 150 relative to the center of the substrate 140 is set, and the setting value is based on the principle that the sag S of the substrate is substantially smaller than the distance 'lπ. Factors affecting the sag " include the overall size of the substrate, the thickness of the substrate, the composition of the film on the substrate, the distance between lifting the sheath 150, the temperature of the substrate, and other factors. Therefore, when lifting page u, the paper size applies the Chinese National Standard (CNS) A4 specification ⑽χ 297 public love) ----- ^ --------- · -------- Order- -------- Line (Please read the notes on the back before filling this page) 498482 A7 B7 V. Description of the invention () The first group 180 of the lifting sheath 150 picks up the substrate 14 from the support seat surface 134 At 0 o'clock, the substrate 140 can avoid touching the second group 182 of the lifting sheath 152, because when the substrate 140 is lifted from the support seat surface 134 to a higher level, the second group 182 of the lifting sheath 152 starts to extend. As shown in FIG. 3, when the substrate 14 is completely lifted from the support seat assembly 138, the second group 182 of the lifting sheath 152 extends a distance D 'from the support seat surface 134, and the first The distance that the group protrudes from the support surface 134 is D ''. When the substrate is moved away from the support surface 1 3 4, the distance D is smaller than the distance D ". Therefore, the second group 1 8 2 of the lifting sheath 1 5 2 is still at a distance from the substrate 1 4 0. In this way, the degree of contact between the substrate 140 and the lifting sheath can be minimized when the substrate 140 is lifted from the support base assembly 1 3 8 (in other words, the lifting sheath 152 never touches the substrate 140) This can reduce the possibility of the central part of the substrate 140 being scratched. As shown in FIG. 2B, the residual force (eg, electrostatic attraction) between a substrate 140 and the support base assembly 138 may cause the substrate to bend more than a predetermined amount indicated in FIG. 2A "s" . If the residual force is large or cannot be removed sufficiently, the sag "S" of the substrate 140 "becomes the same as lifting the first group 1 5 0 of the sheath 1 150 from the support seat surface 1 3 4 The distance from the substrate 1 to 40 is equal to 'L'. At this time, the second group ι82 of the lifted sheath 152 is in contact with the center of the substrate 140. When the lifting plate 1 1 8 and the substrate support 1 3 8 move closer, the second set 182 of the lifting sheath 152 touches the substrate 140 ,. Lifting the second set 182 of the sheath 152 overcomes the residual suction that is usually concentrated in the center of the substrate and lifts the center portion of the substrate 1 40 ', thus preventing the substrate from bending due to sags exceeding a predetermined amount S. Damage to the substrate and / or the layer or device stored thereon. Since the substrate 1 40 becomes separated from the support seat surface 134 of the support seat assembly i 3 8, the substrate 140 ′ is no longer sagging “S,” due to the residual force, and returns from the normal direction to the dotted line Sagging page 15 This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs --- ----- Order -------- I — — — — — — — — — — — — — — — — — — — — 498482 A7 B7 V. Description of the invention () '' S position 'In which the substrate 1 4 0 no longer touches the second group 182 of the lifting hosel 1 5 2. As the lifting disc 254 continues to lift the sheath 150 and! 52 is set in the fully activated position, so the substrate 140 and the support surface 134 are separated by a distance at this time, as shown in FIG. 3. Figure 4 is a flowchart of a method 400 (e.g., desorption) for lifting a substrate from the surface of a support base, which is performed according to an embodiment of the present invention. Please start from step 402 and refer to the description in FIG. 3. A set 180 of the lifting sheath 150 is extended from a support seat surface 134 of a support seat assembly 138 by a first distance Dn. At step 404, a second group 182 of the lifting sheath 152 projects a second distance D 'from the support seat surface 134 of the support seat assembly 138. In general, the second group 182 of the lifting sheath 152 is located radially inside the first group 1 § 〇 of the lifting sheath 150. At step 4 06, if the residual suction between the substrate 1 40 and the support base assembly i 3 8 makes the droop of the substrate 140 ,, S, "(see Fig. 2B) equal to the first and second distances ( D ,, _ D '= L), the second group ^ of the lifted sheath 52 will contact the substrate 140. Figure 5 is another of a plasma enhanced chemical vapor deposition system 500 An embodiment. The system 500 is generally approximately similar to the system 100 described in FIG. U. However, in this embodiment, the first set 5 8 0 and the lifting plug of the lifting socket 506 included in the support seat assembly 50 2 are included in the embodiment. The length of the second group 5 8 2 of the sheath 5 2 0 is the same. The lifting sheaths 506,520 each have a first end 508,522 in the form of a line, for lifting the base from a support surface 528 of the substrate support 502 Material 14. The lifting sheaths 506, 520 each have a second end 51,524 which protrudes beyond a bottom side 530 of the substrate support 502. A lifting disc 512 is disposed below the substrate support 502. The lifting disc 512 usually includes a rim 516 that protrudes beyond a central portion 514. 5 1 2 is activated to lift the substrate i 40 from the surface of the support when the disc is lifted. The paper is again applicable to China National Standard (CNS) A4 specifications (210 X 297 meals (please read the precautions on the back before filling out this page). Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs t -------- --I -.--------------------- 498482 A7 Five consumers printed on the Intellectual Property Bureau of the Ministry of Economic Affairs printed a description of the invention () 5 2 8 lift up ' The flange 5 1 6 of the lifting disk 5 1 2 will contact the first group 5 8 0 of the lifting hosel 506 before the central portion 5 1 4 touches the second group 582 of the lifting hosel 520. The flange 5 1 6 and The height difference between the central part 5 1 4 "" will make the first group 5 8 0 of the ascending sheath 5 0 6 higher than the second group 5 8 2 of the ascending sheath 5 2 0 first from the support seat surface 528 The height difference, D ”is selected based on the principle that it can produce the same difference as the difference in the azimuth difference between the height of the sheath and the height of the sheath. In addition, the lifting disc 5 1 2 can be selectively lifted with the same length The sheaths 506,520 are used together. In the interim operation, the semiconductor substrate 1 4 shown in Figure 1 can be processed by some methods. For example, to deposit a silicon nitride layer, a true 2 is first provided to the substrate 140. With support Between the pieces 138 to stabilize the substrate 140. The support base assembly 138 is lifted so that the substrate 14 and the distribution plate 118 are generally separated by a distance of about 500 to 1,000 millimeters. The substrate The 140 temperature is raised to a predetermined processing temperature, that is, between 150 and 400 degrees Celsius, and the temperature increase is mainly provided by an electrode 32 to provide power. The gas is supplied from a gas panel to the processing chamber through a distribution plate 118 to form a gas mixture. In one embodiment, the gas may include silane, ammonia, and nitrogen components. Radio frequency power is provided between the distribution plate u 8 and the support base assembly 138 to form a plasma from the gas mixture, which in turn forms a silicon nitride layer on the substrate 140. After the treatment, the substrate 140 may be optionally treated with plasma, that is, an inert gas (ie, a gas that does not adversely affect the layer film deposited on the substrate and does not form other materials on the substrate). Plasma, wherein the plasma treatment time is about 5 seconds to reduce the suction between the substrate and the support seat assembly 1 3 8. This treatment is disclosed in U.S. Patent 5,380,566. Then, the support base assembly 138 is lowered so that the processed material 140 can be removed. The lifting plate i 5 4 is activated to support the Chinese standard (CNS) A4 specification (210 X 297 mm) from the support base surface i 3 4 on page 17. This paper size is -------- ^- --〆 -------- Order --------- Line (Please read the precautions on the back before filling in this page) Basic surface 498482 A7 _ B7______ V. Description of the invention () The hosel 152 and the substrate 140 are lifted. If the residual suction between the support surface 134 and the substrate 140 causes the substrate to bend to a predetermined amount, the second set 182 of the lifting sheath 152 will contact the substrate 140 so that the substrate 140 can leave the support surface 134. Once the support seat surface 134 is left, the substrate 140 is positioned at a position of the first group 180 that lifts the hosel 150, that is, a substrate processing robot can enter the processing chamber 102 and remove the substrate again. 140 substrate position for further processing in other equipment. If the residual suction between the support seat 134 and the substrate 140 is not sufficient to bend the substrate to a distance " L ", the second set 182 of the lifting sheath 152 will never be able to contact the substrate 1 40, so Will leave any marks on it. The present invention is described in the above in terms of the behavior of a plasma enhanced chemical vapor deposition process. However, those skilled in the art can still easily design a lifting sheath to support a There are other different embodiments in which a substrate is separated from the seat surface, so it does not depart from the scope and spirit of the present invention, but all belong to the scope of rights claimed in this patent. (Please read the notes on the back before filling this page) ·· Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy