TW506140B - PIN-photo-diode on a vertical structurized layer-sequence and its production method as well as photo-diode array - Google Patents

PIN-photo-diode on a vertical structurized layer-sequence and its production method as well as photo-diode array Download PDF

Info

Publication number: TW506140B
Authority: TW; Taiwan
Prior art keywords: layer; patent application; essential; item; sequence
Prior art date: 2000-08-18

Application number

TW090120082A

Other languages

English (en)

Chinese (zh)

Inventor

Alexander Benedix

Dr Bernd Klehn

Original Assignee

Infineon Technologies Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2000-08-18

Filing date

2001-08-16

Publication date

2002-10-11

2001-08-16 Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag

2002-10-11 Application granted granted Critical

2002-10-11 Publication of TW506140B publication Critical patent/TW506140B/zh

Links

238000004519 manufacturing process Methods 0.000 title claims description 7
238000000034 method Methods 0.000 claims abstract description 31
229910052710 silicon Inorganic materials 0.000 claims description 31
239000010703 silicon Substances 0.000 claims description 31
239000000758 substrate Substances 0.000 claims description 23
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
238000005530 etching Methods 0.000 claims description 14
239000000463 material Substances 0.000 claims description 9
239000004065 semiconductor Substances 0.000 claims description 9
239000000126 substance Substances 0.000 claims 1
KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
239000002800 charge carrier Substances 0.000 description 5
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
239000013078 crystal Substances 0.000 description 3
238000001459 lithography Methods 0.000 description 3
229910052751 metal Inorganic materials 0.000 description 3
239000002184 metal Substances 0.000 description 3
239000002966 varnish Substances 0.000 description 3
WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 2
229910052770 Uranium Inorganic materials 0.000 description 2
230000002829 reductive effect Effects 0.000 description 2
230000003595 spectral effect Effects 0.000 description 2
JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 2
239000012670 alkaline solution Substances 0.000 description 1
RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
229910000070 arsenic hydride Inorganic materials 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
238000003486 chemical etching Methods 0.000 description 1
230000000295 complement effect Effects 0.000 description 1
238000010894 electron beam technology Methods 0.000 description 1
230000003628 erosive effect Effects 0.000 description 1
239000004922 lacquer Substances 0.000 description 1
230000000670 limiting effect Effects 0.000 description 1
230000000873 masking effect Effects 0.000 description 1
239000000203 mixture Substances 0.000 description 1
230000036961 partial effect Effects 0.000 description 1
238000001020 plasma etching Methods 0.000 description 1
239000004576 sand Substances 0.000 description 1
230000035945 sensitivity Effects 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
239000000243 solution Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

Light Receiving Elements (AREA)
Solid State Image Pick-Up Elements (AREA)

TW090120082A 2000-08-18 2001-08-16 PIN-photo-diode on a vertical structurized layer-sequence and its production method as well as photo-diode array TW506140B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE10040459A DE10040459A1 (de)	2000-08-18	2000-08-18	PIN-Fotodiode in einer vertikal strukturierten Schichtenfolge und Verfahren zur Herstellung einer PIN-Diode

Publications (1)

Publication Number	Publication Date
TW506140B true TW506140B (en)	2002-10-11

Family

ID=7652897

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW090120082A TW506140B (en)	2000-08-18	2001-08-16	PIN-photo-diode on a vertical structurized layer-sequence and its production method as well as photo-diode array

Country Status (3)

Country	Link
DE (1)	DE10040459A1 (fr)
TW (1)	TW506140B (fr)
WO (1)	WO2002017404A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE102004017776A1 (de) *	2004-04-13	2005-11-03	Siemens Ag	Sonnensensor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3150999A (en) *	1961-02-17	1964-09-29	Transitron Electronic Corp	Radiant energy transducer
US4135950A (en) *	1975-09-22	1979-01-23	Communications Satellite Corporation	Radiation hardened solar cell
JPH0680837B2 (ja) *	1983-08-29	1994-10-12	通商産業省工業技術院長	光路を延長した光電変換素子
US4989972A (en) *	1989-05-01	1991-02-05	Hewlett-Packard Company	Low reflectivity surface relief gratings for photodetectors
DE3920219A1 (de) *	1989-06-21	1991-01-10	Licentia Gmbh	Betrieb eines optischen detektors bzw. optischer detektor geeignet fuer diesen betrieb
US5248621A (en) *	1990-10-23	1993-09-28	Canon Kabushiki Kaisha	Method for producing solar cell devices of crystalline material
DE19522539C2 (de) *	1995-06-21	1997-06-12	Fraunhofer Ges Forschung	Solarzelle mit einem, eine Oberflächentextur aufweisenden Emitter sowie Verfahren zur Herstellung derselben
US6177711B1 (en) *	1996-09-19	2001-01-23	Canon Kabushiki Kaisha	Photoelectric conversion element

2000
- 2000-08-18 DE DE10040459A patent/DE10040459A1/de not_active Ceased
2001
- 2001-07-21 WO PCT/EP2001/008448 patent/WO2002017404A1/fr not_active Ceased
- 2001-08-16 TW TW090120082A patent/TW506140B/zh active

Also Published As

Publication number	Publication date
DE10040459A1 (de)	2002-03-21
WO2002017404A1 (fr)	2002-02-28

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