TW507025B - Silicon epitaxial wafer manufacturing method - Google Patents

Silicon epitaxial wafer manufacturing method Download PDF

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Publication number
TW507025B
TW507025B TW090115710A TW90115710A TW507025B TW 507025 B TW507025 B TW 507025B TW 090115710 A TW090115710 A TW 090115710A TW 90115710 A TW90115710 A TW 90115710A TW 507025 B TW507025 B TW 507025B
Authority
TW
Taiwan
Prior art keywords
concentration
impurity concentration
phase growth
transition region
dopant gas
Prior art date
Application number
TW090115710A
Other languages
English (en)
Chinese (zh)
Inventor
Hitoshi Kabasawa
Yuji Okubo
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Application granted granted Critical
Publication of TW507025B publication Critical patent/TW507025B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/15—Diffusion of dopants within, into or out of semiconductor bodies or layers from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
TW090115710A 2000-06-29 2001-06-28 Silicon epitaxial wafer manufacturing method TW507025B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000195880A JP3791667B2 (ja) 2000-06-29 2000-06-29 シリコンエピタキシャルウェーハの製造方法

Publications (1)

Publication Number Publication Date
TW507025B true TW507025B (en) 2002-10-21

Family

ID=18694473

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090115710A TW507025B (en) 2000-06-29 2001-06-28 Silicon epitaxial wafer manufacturing method

Country Status (3)

Country Link
JP (1) JP3791667B2 (fr)
TW (1) TW507025B (fr)
WO (1) WO2002000971A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5227670B2 (ja) * 2008-06-12 2013-07-03 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルウェーハの製造方法
WO2011125305A1 (fr) * 2010-04-08 2011-10-13 信越半導体株式会社 Tranche épitaxiale de silicium, son procédé de fabrication, et procédé de production d'un élément semi-conducteur ou d'un circuit intégré
JP6330718B2 (ja) * 2015-04-17 2018-05-30 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP6332698B2 (ja) * 2015-07-24 2018-05-30 信越半導体株式会社 エピタキシャルウェーハの製造方法
CN113322512B (zh) * 2021-08-03 2021-12-17 南京国盛电子有限公司 一种提高外延片过渡区一致性的工艺方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0684809A (ja) * 1992-09-04 1994-03-25 Rohm Co Ltd エピタキシャル層の形成法
JPH0817737A (ja) * 1994-07-04 1996-01-19 Komatsu Electron Metals Co Ltd エピタキシャル成長法及びエピタキシャル成長基板
JP2000191395A (ja) * 1998-12-25 2000-07-11 Komatsu Electronic Metals Co Ltd 半導体ウェ―ハの薄膜形成方法および半導体ウェ―ハ

Also Published As

Publication number Publication date
JP2002020198A (ja) 2002-01-23
WO2002000971A1 (fr) 2002-01-03
JP3791667B2 (ja) 2006-06-28

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