TW511140B - Recycle handling method of the monitor wafer - Google Patents

Abstract

The present invention is the addendum of the patent application No. 861200 ""Recycle handling method of the monitor wafer"", which is applied in semiconductor process. The handling method comprises forming silicon oxide on the clean monitor wafer, etching the monitor wafer by using an etching solution after depositing silicon nitride, in which the etch rate of the etching solution to silicon oxide is far larger than that of silicon nitride. Cleaning the surface of monitor wafer by using a cleaning liquid finally. The etching solution with larger selectivity of silicon oxide to silicon nitride is utilized in the present invention to etch the surface of the monitor wafer all at once, which can increase the cleanness of the recycled monitor wafer, and reduce the recycle handling time of monitor wafer effectively.

Description

511140

Field of the Invention: The present invention is a method for completely recovering defective particles on the surface of a control sheet invented by the "Recycling and Processing Method of Application No.". 861220041 "Additional patent for control crystals, especially a processor capable of reducing and shortening the recovery time of control pieces. BACKGROUND OF THE INVENTION 0 The production of the circuit is based on the deposition of nitrogen and a layer of nitrogen to detect the deposition of silicon nitride. The method of controlling the solution directly cleans the wafer, which will clean the circuit. The fossil evening is seconds, and the cleanliness control film deposited by the deposition process layer can be poorly controlled at the moment, so that the return process uses a blank map for the cleanliness of the unit. The defect and stability of the product crystals are not convenient after repeated use. The surface of the sheet is sunk, and the surface area is still controlled after each process is controlled. The silicon crystals are often in a low boat 1 2 and in a suitable 16 and round surface. The number of contaminated particles should be 0, because the traditional accumulated nitrogen will remain in the clean particle control sheet that cannot be cleaned in steps. The first picture shows that the chemical vapor phase is loaded with many appropriate intervals. The control panel 14 often has complicated maps. Therefore, it is necessary to use the thickness and thickness to develop the recovery method of the fossil layer. However, many of them are not easy to be reused. The degree of definition is very high. It is a measurement tool. A lucid wafer deposition (LPCVD) is used to make integrated control pieces 1 4. The surface will be shaped, and it is not suitable to use the detection control piece 1 4 Understanding the furnace tube 10 0 The control film processing system uses hydrofluoric acid And the bad granules removed after recovery

511140 V. Description of the Invention (2) Patent Bulletin No. Law's mother case mentioned that silicon nitride was deposited on the control sheet. After the control sheet was tested, stone dioxide was engraved first. This cleanliness, but the steps are thinner than the silicon oxide layer when the silicon nitride layer is etched by neodymium or there is a silicon dioxide layer and etch the surface of the wafer, causing its area in the silicon nitride layer to quickly expose the exposed nitride. Silicon is etched by side etching to remove silicon nitride underneath silicon dioxide. This is the lack of the mother case. Therefore, the recovery method of the present invention is proposed to control the return of another control piece before controlling Although the process of etching the silicon nitride sample with phosphoric acid on the surface of the sheet can be complicated and costly, if the grain boundary cracks are deposited on the nitride layer, the phosphorus is engraved, and then the money is etched to the defect (defect). It is removed by silicon phosphide, but while the slower etching is required, the phosphoric acid is still 'etched to the wafer', which is to improve the defect of the mother case to form a layer after the wafer processing. If effective acid is used to etch wafers, it will be high. If acid is used for good particle engraving, the surface will continue to be recovered and the method will be to recover the layer. grain In the rest of the time, the reason for the loss is exposed. The reason is that it is in the fossil eve. The hydrofluoric acid film is thin and thin or dip into the bottom and the loss atom is attached. It is easy to lose some nitrogen on the surface of the grain surface. It is necessary for the control of the film. The purpose and summary of the invention:

This effectively controls the cleanliness of wafer recovery. A control place for controlling wafer recycling ’saves time and costs. The main purpose of the present invention is to propose a short method, which can improve the cleanliness of the control tablets. The second object of the present invention is to propose a method, which can simplify the steps of control tablet recovery.

511140

According to the present invention, a crystal control wafer is firstly formed on the control wafer, and the control wafer is etched with a #etching solution, the rate is far greater than the etching rate of silicon nitride, that is, silicon dioxide and any Residual 'Finally use a cleaning solution to control the cleanliness of the new wafers. The recycling number is explained. The round recycling method is to clean the deposits after nitriding > After the silicon oxide is etched, the surface of the defective granules standing on the silicon dioxide layer after cleaning the nitride-etched layer can be cleaned to obtain a control film. 1 0 furnace tube 1 4 control piece 2 0 control piece 2 4 silicon nitride 2 8 defective particles 1 2 wafer boat 16 wafer 2 2 silicon dioxide 2 6 defective particles

Detailed description: The present invention refers to the steps of removing bad particles on the surface of the control sheet and simplifying the recovery of the control sheet, saving time and effectively recycling the use. The flow and operation conditions are shown in the second and third figures, respectively. First, a blank wafer is provided as the control piece 200 ′, that is, step S10, and then step S12 is performed to form a layer of silicon dioxide 22 on the control piece 20 with a thickness of about 45 to 1000 Angstroms (person). Then, the silicon wafer is deposited with the control chip and the wafer on which the integrated circuit is to be fabricated, that is, step s 1 4. The surface of the silicon nitride layer is adhered to the bad particles 2 6, and the silicon nitride 2 is deposited. The thickness of 4 is about 45 to 7000 Angstroms.

M1140

After the formation of nitrided hair 2, the control is sequentially a pair of silicon dioxide control sheets 2 including the nitridation of step S 1 > 6 layer of defective particles 2 silicon dioxide layer is often high, at step 2, Defective particles are etched and the particles are not dissolved. The control tablet is cleaned within its concentration control range. After light: the surface of the number of particles is formed with a liquid 1 6 to form 6 1, which remains in the non-siliconized silicon 2 penetrating etch Or the particles are deacidified, and the degree range is clean. The deposition rate of 4 and the detection sheet 2 0 for the recovery layer 1 gasification dream 2 2 is much higher than the surface for etching. 6 1 and step s 1 2 4 will be engraved by silver 6 because it is too large or not 2 2. Due to the second oxygen under the eclipse S 1 6 2, the silicon dioxide method continues to adhere to the purpose of controlling the net. Among them, it is between 49% and 1%. After about seven minutes, its deposition thickness and surface treatment are poor. At this time, the wafer and a layer of silicon nitride 24 are used to etch the silicon nitride at an etching rate, that is, step S16 and step s62. The immersion liquid on the surface of the control piece 20 is etched away, that is, step S 1 is easily etched by the etchant and continues to etch the liquid to the silicon dioxide 2 2 The etching liquid will be quickly etched away. The silicon dioxide will also be quickly etched on the etching liquid 2 2 Defective particles 2 6 pieces 20, and finally reached the defect, the etching solution is preferably a hydrofluoric temperature can be engraved on the surface of the control film at 25 degrees Celsius to 80 'C. Then proceed to step S18, using a cleaning solution on the surface of the control film The cleaning is performed to remove the bad particles 28 adsorbed on the surface of the control sheet 20, and the composition of the cleaning solution is NΗ20Η · Η202 ·· Η20 = 1: 1: 5 or 1: 4: 60. The cleaned control sheet Can be used again and again. In order to understand the actual effect of the recycling control tablet of the present invention, a new wafer and a comparative experiment using the present invention are used. The test data is shown in the following table: J 丄 丄 丄 411

^ 5-— Xian Erliu (Α) αΜ3 13 1R 0 · Μ4 2 LU 1 0 · 4 ~ 0 · 5 3 1 4 0 · 5-α8 —- ~ .—. 0 0 The test results show that the invention is not The cleanliness of the recovered control wafer is very close to that of the new wafer. In the fourth figure, the relationship between the surface cleanliness of the recovered control wafer of the present invention and the deposited silicon nitride of the new wafer is provided. Multiple experimental data show that the cleanliness of the two is quite close. In other words, the reliability provided by the recovery control wafer of the present invention is almost the same as that of a new wafer. According to the flowchart shown in the second figure and the detailed description, it can be understood that the etching operation of the silicon nitride and silicon dioxide on the surface of the control panel of the present invention is completed at one time. Silicon dioxide etching characteristics' to achieve wafer cleaning purposes. Compared with the mother case, the present invention can effectively solve the above-mentioned lack of mother case. The present invention directly uses the remaining etching solution with selective etching xj rate to carry out miscellaneous engraving of nitriding fragment and dioxide dream to remove it. As the etching solution used does not have any face-engraving effect on the surface of the silicon wafer of the control chip (the silver etching rate is zero), even if the thickness of the silicon dioxide layer is less than 50 angstroms or the silicon nitride layer is unevenly deposited, Boundary cracks or the slower remaining part of #nitride nitride below the bad particles will not be lost to the wafer surface, so its defects can be effectively reduced. In addition, the present invention does simplify the wafer control

^ -— Page 8 511140 V. Description of the invention (6) The process of the collection operation also has the ability to increase its throughput (Throughput). However, the above is to make those skilled in the technology understand the semiconductor process. People have implemented the examples without departing from the spirit disclosed by the present invention, which is contained in the patent application described below, which saves time and costs, and thus is far better than the technical effects of the mother case. The examples illustrate the characteristics of the present invention, and the purpose of the present invention is to implement the content of the present invention. It is easy to modify the spirit of the above disclosure. Therefore, any other equivalent modifications or modifications that have not been completed should still be applied. Surrounding.

Page 9 511140 Brief Description of Drawings Description of Drawings: The first drawing is a schematic diagram of silicon nitride deposited on a silicon wafer. The second figure is an embodiment of the present invention. The third diagram is a schematic diagram of the etching steps in the process shown in the second diagram. The fourth figure shows the relationship between the control wafer recovered by the present invention and the new wafer obtained through several experiments. < 1

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Claims (1)

511140 Step 1: A method for controlling the recovery and recovery of wafers (additional-), including the following dream: forming a silicon dioxide layer on a control chip; and the fraction of the oxide is much larger than that of nitrogen. Forming a silicon nitride layer on the silicon dioxide layer; etching using an etchant to etch the silicon nitride layer, and the etching solution etch rate of the fragmented layer of the silicon dioxide layer; and Use a cleaning solution to clean the controller. 2 · As in the first patent application scope, Ganjian, ~% sigh times V Yanlikou 1), the silicon dioxide layer is by chemical vapor deposition or thermal deposition. ~ Chemical cleaning 3. The recovery treatment method described in item 1 of the scope of the patent application (Additional 1), wherein the silicon nitride layer is in a chemical vapor deposition chamber or a furnace tube shape 4. As described in the first scope of the scope of patent application The recovery processing method (additional one), wherein the etching solution is hydrofluoric acid.口 5. The recovery processing method (additional-) as described in item 4 of the scope of the patent application, wherein the concentration of the hydrofluoric acid is about 49% to 1%. 6. The recycling method (additional-) 'as described in item 4 of the scope of patent application, wherein the temperature of the hydrofluoric acid is between about 25 and 80 degrees Celsius. 7. The recovery processing method (additional _) as described in item 1 of the scope of patent application, wherein the thickness of the silicon dioxide layer is about 45 to 1000 Angstroms. 8 · Recycling treatment method described in item 1 of the scope of patent application (Additional one) 'wherein the composition of the cleaning solution is Ν Η 2 Ο Η · H2 02: Η 2 0 = 1: 1: c 1: 4 · · 6 0 By. 511140 VI. Scope of patent application 9. A method for controlling the recycling of wafers (additional one), including the following steps: setting a silicon dioxide layer on a control chip; forming a deposited layer on the silicon dioxide layer; using A money engraving liquid with selective surname engraving is used to engrav the surname and the dioxide layer, and the surrogate engraving ratio to the oxidizing layer is much higher than that of the deposit layer. Engraving rate; and cleaning the control panel using a cleaning solution. 10. The recovery processing method (additional one) as described in item 9 of the scope of patent application, wherein the etching solution is hydrofluoric acid. 4 11 · The recovery processing method (Additional one) as described in item 10 of the scope of patent application, wherein the concentration of the hydrofluoric acid is about 49% to 1%. 12 The recovery processing method (Additional 1) as described in item 10 of the scope of patent application, wherein the temperature of the hydrofluoric acid is between about 25 ° C and 80 ° C. 1 3. The recycling method (an additional one) as described in item 9 of the scope of the patent application, wherein the thickness of the silicon dioxide layer is about 45 to 1000 Angstroms. 14. The recovery processing method (Additional 1) as described in item 9 of Shenyan's patent scope, wherein the composition of the cleaning liquid is NH2OH: H202: H2O: 1: 5 or 1 · 4 · 60. Page 12