TW512257B - Projection exposure apparatus and exposure method - Google Patents

Projection exposure apparatus and exposure method Download PDF

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TW512257B
TW512257B TW087119614A TW87119614A TW512257B TW 512257 B TW512257 B TW 512257B TW 087119614 A TW087119614 A TW 087119614A TW 87119614 A TW87119614 A TW 87119614A TW 512257 B TW512257 B TW 512257B
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objective lens
scope
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item
facility
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TW087119614A
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Gerhard Furter
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Zeiss Stiftung
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Library & Information Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Silver Salt Photography Or Processing Solution Therefor (AREA)

Description

512257 A7 _ B7五、發明説明（） 經濟部智慧財產局員工消費合作社印製 本發明係有關一種投影曝光設施，包括多個平行設置之 物鏡，如申請專利範圍第1項前言所述，及一種進行大面積 圖樣微石版印刷曝光之掃描程序，如申請專利範圍第項 前言所述。 專利 JP 7-059 986, JP 7-135 165 及 JP 7-218 863 曾提出 此種設施及方法。 成像比例皆選用1:1，例如JP 7-135 165第15段之說 明，其爲使遮蔽罩與曝光板在掃描時穩固彼此連接之條件。 該專利設透鏡系統作爲投影物鏡，其他兩專利則設Dyson 或Offner型之反折射投影物鏡。 各設5至6個平行工作之系統，其各具自己的光源及曝 光光學兀件，該系統設兩排交錯多邊境爲像場，其在掃描時 確保均与的逐行曝光。 JP 7-135 165之透鏡系統則未採光學元件之多邊切割。 其他兩專利反折射物鏡之折射鏡爲矩形，但與梯行或六角形 像場無關。此種技術採1:1之成像需要極大型的遮蔽罩。 (請先閱讀背面之注意事項再填寫本頁) i# 訂 f _____2 本紙張尺度適用中國國家榡準（CNS ) A4規格（210X297公釐） 512257 A7 ___B7 五、發明説明（） (請先閲讀背面之注意事項再填寫本頁j 專利 US 5,614,988, US 5,688,624, US 5,617,211，US 5,617，181及EP-A 0 723 173亦曾提出此種系統。 半導體製造之微石版印刷典型地皆採用晶圓重步機工 作，其物鏡可縮小4倍或五倍，像場直徑約爲3〇 mm，圖樣 寬度爲0.3 - 〇·5 μηι。掃描器提高像場長寬比。 爲平屏幕時，如LCD技術，典型的3μπι圖樣寬需要 對角線10吋以上之大圖樣面。習用重步機物鏡之像場太 小。使用晶圓重步機之Step and Repeat法，會在曝光區 (Stitching)的過渡地帶出現無法容忍之干擾部位。 專利EP-A 0 723 173提出以一放大鏡使一完整FpD曝 光之裝置，該透鏡具一非旋轉對稱元件。 本發明之目的在於，提供另一種以照相石版印刷製造大 面積圖樣之技術。儘量使用微晶片所採用的遮蔽覃。 經濟部智慧財產局員工消費合作社印製 本目的因申請專利範圍第1項的投影曝光設施及申請 專利範圍第11__項的程序而達成。 其於一物鏡陣列中採用放大之投影物鏡。 FPD需要之圖樣寬較之現行微晶片製造技術而言相當 _____3 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨0 X 297公釐） 512257 A7 B7 五、發明説明（） 大，因此製造圖樣寬比產品更小的遮蔽罩並無問題，其方法 爲在平方關係上減少遮蔽罩的面積，而使得遮蔽罩的製造及 操作更簡單。不同速度之遮蔽罩及晶圓掃描已在比FPD要 求更高精確度的微晶片製造通過試驗。 本發明之出發點爲： 一若具一般大小及圖樣寬度的現有微晶片製造技術遮蔽罩 (Reticles)可被使用，則可大爲簡化整個程序。 一微晶片製造之縮小掃描技術即使公差極小亦可以不同速 度同步移動調制盤及晶圓。 有利之實施例見申請專利範圍第J_至項及第項。 申請專利範圍第^項每一物鏡設分開的調制盤（物遮物 罩）可得到簡單易控制的小調制盤，其在工作中亦可被適當 調整。 申請專利範圍第L項平行設置多個照明光學元件及第2 項設置多個光源，可最佳化配置之照明及功效。 申請專利範圍第9項及第1〇項物鏡最大鏡框或透鏡配 合第8項多邊形之各像場可得到極密實之物鏡陣列結構’而 __ _ (請先閱讀背面之注意事項再填寫本頁) 訂 f 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 512257 A7 B7 五、發明說明（） 因此得到極穩定及有效的條狀掃描曝光。 申請專利範圍第JJ一項使用純透鏡物鏡，利用現有光學 設計，而容許陣列各元件緊密排列，例如兩行以上平行交錯。 申請專利範圍第12—項具中間影像的物鏡容許配置一件 式調制盤。 申請專利範圍第項平屏幕圖樣之製造是本發明的主 要應用範圍。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 以下將依據附圖所示實施例進一步說明本發明。 圖1係具一放大鏡陣列用於FPD製造之投影曝光設施 側視圖。 圖2係具條狀遮蔽罩之調制盤或調制盤陣列示意圖。 圖3係晶圓側掃描縫隙像場與物鏡之示意圖。 圖4係角狀切割截面之物鏡配置示意圖。 圖5係具一放大鏡陣列及連續遮蔽罩枝頭影曝光設施 側視圖。 Γ 良 本紙張尺度適用中國國家標準（CNS)A4規袼（210 X 297公釐） 512257 邶 中 央 標 準 局 員 工 消 費 合 作 社 印 % Α7 Β7 五、發明説明（） 圖6係圖5晶圓側配置示意圖。 圖7係一放大投影物鏡之透鏡截面圖。 圖1所示陣列具3個曝光系統Bl，Β3, Β5，一調制盤 或調制盤陣R，物鏡〇1，〇3> 05及晶圓W。每一物鏡01，03, 05皆放大且倒置像，其係一般的折射物鏡，相當於微石 版印刷投影曝光物鏡。稍後將依據圖7詳細說明一實施 例。 第二列（例如兩物鏡）物鏡02, 04設在所示調制盤 區R2及R4之後，但爲淸楚顯示之故並未示出。 其餘則與上述陣列曝光設施組成元件之配置相同。 但調制盤之設計則如圖2。其圖樣面配合物鏡〇1至 〇5之成像比例而小於曝光晶圓面。分成條狀區R1至R5， 每一條狀區各被一物鏡01至〇5成像。 由於物鏡01至〇5皆倒置像，故調制盤上的圖樣爲 鏡像，影像之連接如字母A，B，C，D所示配置。 圖3顯示晶圓側之圖，物鏡至〇5以直徑01緊密 排成兩排。其像場，掃瞄縫隙S1至S5，之尺寸設計使得 I ---^裝---.--l·!!------0 (請先閲讀背面之注意事項再镇寫本頁) 本紙張尺度朗 + ( CNS } Λ4^Τ210Χ297^5Τ 512257 A7 B7 五、發明説明（） y方向掃瞄時整個像場皆被以均与的強度曝光。但縫 隙si至S5雨邊設計成三角形，並在此部份重疊。使用 此種方法可使相鄰部份的連接平順。然調制盤條狀區R1 至R5邊緣需有兩相同圖樣的適當條紋。 請先I 聞 I 讀 背 此種五件式陣列圖樣只是一實例，每一列皆可任意排 列 再 裝 經濟部中央標準局員工消費合作社印製 調制盤R上可設所有圖樣條狀區R1至R5，或只設 單一條狀區，而在一載體上精確組裝成一陣列。甚至可以 使各條狀區的距離（軟體控制）配合影像基層之要求，例 如熱處理後影像基層變形時。其只有使用調制盤陣列才有 可能，而無法使用大型的單一調制盤。爲達此目的，稍微 放大投影物鏡〇1至〇5 (約1.1至1.5)便已足夠。 圖4顯示在y方向上更爲靠近之掃瞄縫隙S41至S45， 縫隙其餘之設計與縫隙S1至S5相同’其物鏡041至045 鏡框及/或透鏡截面切割成角形。此方法在物鏡透鏡明顯 大於孔徑透鏡且決定物鏡截面時爲可行。 B1至B5之曝光裝置（圖1)截面尺寸需配合物鏡〇1 至05，041至045。其極爲簡單，因其只照射較小之調 制盤場。 本紙張尺度適用中國國家檬準（CNS ) Μ規格（210X297公釐） 頁 訂 # 512257 A7 __;__B7 五、發明説明（) 圖5顯示另一設計之側截面圖，圖6顯示其晶圓側之 圖，該設計在調制盤R5上設--件式銜接遮蔽罩。此處 需使投影物鏡〇51至〇54之調制盤場與像場橫向交錯’ 且影像倒置。其可利用具中間影像之反折射物鏡。亦可利 用反射鏡物鏡。 · 此種物鏡051至〇55例如可利用具中間影像之習知 縮小微石版印刷投影物鏡，其物平面與影像平面被交換。 如專利EP 0 736 789 A2所提出者。 (請先閲讀背面之注意事項再贫寫本頁) ^衣. 再回到圖1設置折射物鏡〇1至05之配置。此種物 鏡一實施例之設計資料顯示於表1，圖7則顯示其透鏡截 面0 I訂 經濟部中央標準局員工消費合作社印製 物鏡爲使用於水銀放電燈透鏡設計爲436 nm，影像 側數値孔徑爲0.1 (物側0.4)，最大像高y’ = 26 mm時， 放大四倍。長度00’爲558 mm，最大透鏡直徑82 mm。 物鏡具折射式微石版印刷投影曝光物鏡之典型結構，只可 用於放大。所有像高之RMS影像誤差皆小於0.032，Strehl 比大於0.96。 指出之玻璃種類爲梅因茲Schott Glaswerke公司所提 供目錄中之光學玻璃。
Φ 512257 A7 B7 五、發明説明（ ) 面 經濟部中央標準局員工消費合作社印製
Q2UMcMngQQ1234K^7g2QQ 半徑物 -163.237 148.818 -121.380 -43.985 -201.332 -62.781 108.987 -452.162 95.420 -218.175 66.388 63.538 62.997 無盡（孔板 -49.639 168.252 91.334 223.051 -269.170 67.223 874.124 70.226 106.330 -283.133 34.468 -51.704 -217.317 141.298 -333.793 像 厚度 5.760 5.958 2.164 4.027 42.794 15.134 27.567 15.665 0.286 13.971 5.001 10.333 13.994 10.640 54.848 9.957 18.229 0.254 10.996 80.447 14.930 1.009 8.401 13.736 3.272 15.000 10.498 61.721 9.427 11.981 玻璃 SF1 SK4 LAK8 LAK10 KF6 SF53 SF2 F5 SK15 LAKN12 LAKN12 BK7 BK7 LAF2 LAK8 (請先閲讀背面之注意事項再填寫本頁) 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 512257 A7 _____B7 五、發明説明（） 圖號說明 (Bl，B2, B3, B4, B5)曝光裝置 (01，02, 03, 04, 05; 041，042, 043, 044, 045; 051，052, 053, 054, 055)物鏡 · (Rl，R2, R3, R4, R5)條狀區 (Sl，S2, S3, S4, S5)像場 (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）

Claims (1)

  1. 512257 Λ8 BB C8 D8 t、申請專利範圍 (請先閱讀背面之注意事項再填寫本頁) ΐ·一種投影片曝光設施，包括多個平行設置之物鏡（01至 05)，其特徵在於，物鏡(ΟΙ至05)放大;且該物鏡以1:1.1， 最好是1:1.5，的比例放大。 2 ·根據申i靑專利軺圍第1項之設施，其中物鏡爲掃瞄型物 鏡。 3·根據申請專利範圍第2項之設施，其中物鏡(〇1至〇5)垂 直於掃瞄方向交錯排成兩排或兩排以上，且掃瞄時各像場 無縫連接或重疊。 4·根據申請專利範圍第3項之設施，其中像場(S1至S5)之 形狀設計使得掃瞄時每像素重疊部份之總光量亦相同。 線- 5·根據申請專利範圍第1項之設施，其中每一物鏡皆有一自 己的物遮蔽罩（調制盤）。 經濟部智慧財產局員工消費合作社印製 6·根據申請專利範圍第1至5項中至少一項之設施，其中每 一物鏡(01至05)皆有一自己的曝光裝置(B1至B5)。 7. 根據申請專利範圍第6項之設施，其中每一曝光裝置(B1 至B5)皆有一分離的光源。 8. 根據申請專利範圍第1至5項中至少一項之設施，其中每 本紙張尺度適用中國國家標準（CNS)A·丨規格（210 X 297公釐） 512257 A8 B8 C8 D8 六、申請專利範圍 一物鏡(01至05)的像場（S1至S5)皆爲多邊形。 9·根據申請專利範圍第^j：頁之設施，其中每一物鏡(CM1至 〇45)之一或多個鏡框皆切割成多邊形。 ί〇·根據申請專利範圍第^項之設施，其中每一物鏡 至〇45)之一或多個透鏡皆切割成多邊形。 11·根據申請專利範圍第1至5項中至少一項之設施，其中 物鏡(ΟΙ至05)是純透鏡物鏡。 12.根據申請專利範圍第1至5項中至少一項之設施’其中 物鏡(051至054)是具中間影像之物鏡。 —種大面積圖樣微石版印刷曝光之掃瞄程序，其使用多 個物鏡(01至〇5)，該物鏡有效地使一掃瞄行成像，其特 徵在於，圖樣(R1至R5)被以1:1·1，最好是1:1.5，的比 例放大成像。 14 ·根據申i靑專利範圍第13項之程序，莫中圖樣爲平屏幕 圖樣。 (請先閱讀背面之注意事項再填寫本頁) 0 訂---------線_ 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐）
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