12·如申請專利範圍第1〇項所述之發光二極體，其中 上述"貝顆粒係擇自下列所組成之族群：微晶質氮化鋁 (Α1Ν)、非晶質氮化矽（SisN4)、非晶質氮化鎵（GaN)及非晶 質一氧化硬（Si〇2)。 13. 如申請專利範圍第1〇項所述之發光二極體，其中 上述介質顆粒係擇自下列所組成之族群：半徑在5〇到 5000nm之間的非晶質氮化矽（以3…）、半徑在5〇到 之間的非晶質二氧化矽（Si〇2)及半徑在50到5000nm之間 的非晶質氮化鎵（GaN)。 14. 如申請專利範圍第1〇項所述之發光二極體，其中 上述磷光顆粒係半徑在1〇〇〇到l〇〇〇〇nm之間的石榴石螢光 材料的微晶體。 15. 如申請專利範圍第項所述之發光二極體，其中 上述碟光顆粒係擇自下列所組成之族群：釓（Gd)、釔（γ)、 鈽（Ce)及鉉（Nd)基磷光質。 16. 如申請專利範圍第1〇項所述之發光二極體，其中 上述磷光顆粒包括含有至少一種擇自下列所組成之族群： 釔（Y)、镏（Lu)、銃（Sc)、鑭（La)、釓（Gd)及釤（Sm)元素與 另一至少一種擇自下列所組成之族群：鋁（A1)、鎵（Ga)及 銦（In)元素之被鈽（ce)活化的石榴石螢光材料。 17. 如申請專利範圍第10項所述之發光二極體，其中 上述透明封膠係擇自下列所組成之族群：半球型鏡片、環 516247 氧樹脂、雙凸透鏡片、薄片玻璃、聚甲基丙烯酸甲酯 (polymethyl methacylate，PMMA)之薄片塑膠及聚碳酸酯 (polycarbonate)之薄片塑膠。 18. 如申請專利範圍第1項所述之發光二極體，其中上 述散射光媒介吸收一部份藉由上述發光構件所放射的光並 放射出一波長不同於上述吸收光的光。 19. 如申請專利範圍第1項所述之發光二極體，其中以 一雷射二極體（LD)替代上述發光二極體。 20. —種雷射二極體（LD)包括： 一發光構件以放射光，包含一透明封膠；以及 一散射光媒介，加入至上述透明封膠，其中上述散射 光媒介係磷光顆粒及孔隙之混合物。 21. 如申請專利範圍第20項所述之雷射二極體，其中 上述散射光媒介之孔隙係擇自於下列之群族：空氣氣泡、 氮氣氣泡及惰氣氣泡。 22. 如申請專利範圍第20項所述之雷射二極體，其中 上述散射光媒介的能隙大於3eV。 23. 如申請專利範圍第20項所述之雷射二極體，其中 上述散射光媒介不會吸收藍光。 24. 如申請專利範圍第20項所述之雷射二極體，其中 上述透明封膠更包括係擇自於下列族群之石榴石螢光材 料：釓（Gd)、釔（Y)、鈽（Ce)及鈥（M)基磷光質。 -4- 25. 如申請專利範圍第20項所述之雷射二極體，其中 上述透明封膠更包括係擇自於下列族群之石榴石螢光材 料：Ag : ZnS、CuAuAl : ZnS、CuAl : ZnS、Mg4(F)Ge〇5 : Μη 及 Ce : YAG 〇 26. 如申請專利範圍第20項所述之雷射二極體，其中 上述透明封膠更包括係擇自於下列族群之石榴石螢光材 料：香豆素（Coumarin 6)、Fluorol 7GA、D0CI、玫魂紅 (Rhodamine 11.0)、DCM、°fc°^(Pyridinel)及°比咬（Pyridine 2)。 27. 如申請專利範圍第20項所述之雷射二極體，其中 上述散射光媒介更包括一由晶質磷光顆粒及介質顆粒所製 成之介質磷光粉。 28. 如申請專利範圍第27項所述之雷射二極體，其中 上述磷光顆粒的濃度為上述介質磷光粉（DPP)總體積的2% 到 25%' 29. 如申請專利範圍第27項所述之雷射二極體，其中 上述介質顆粒係擇自下列所組成之族群：微晶質氮化鋁 (A1N)、非晶質氮化矽（Si3N4)、非晶質氮化鎵（GaN)及非晶 質二氧化矽（Si〇2)。 30·如申請專利範圍第路27項所述之雷射二極體，其 中上述介質顆粒係擇自下列所組成之族群：半徑在50到 5000nm之間的非晶質氮化矽（Si3N4)、半徑在50到5000nm 之間的非晶質二氧化矽（Si〇2)及半徑在50到5000nm之間 的非晶質氮化鎵（GaN) i 31.如申請專利範圍第27項所述之雷射二極體，其中 上述填光顆粒係半徑在1〇〇〇到l〇〇〇〇nm之間的石榴石螢光 材料的微晶體。 32·如申請專利範圍第27項所述之雷射二極體，其中 上述磷光顆粒係擇自下列所組成之族群：釓（Gd)、釔（γ)、 鈽（Ce)及敍（Nd)基磷光質。 33. 如申請專利範圍第27項所述之雷射二極體，其中 上述構光顆粒包括含有至少一種擇自下列所組成之族群： 纪（Y)、鎖（Lu)、銃（Sc)、鑭（La)、釓（Gd)及釤（Sm)元素與 另一至少一種擇自下列所組成之族群：鋁（A1)、鎵（Ga)及 銅（In)元素之被鈽（Ce)活化的石榴石螢光材料。 34. 如申請專利範圍第2〇項所述之雷射二極體，其中 上述透明封膠係擇自下列所組成之族群：半球型鏡片、環 氧樹脂、雙凸透鏡片、薄片玻璃、聚甲基丙烯酸甲酯 (polymethyl methacylate，PMMA)之薄片塑膠及聚碳酸酯 (polycarbonate)之薄片塑膠。 35. 如申請專利範圍第2〇項所述之雷射二極體，其中 上述散射光媒介吸收一部份藉由上述發光構件所放射的光 並放射出一波長不同於上述吸收光的光。12. The light-emitting diode according to item 10 of the scope of the patent application, wherein the above-mentioned " shell particles are selected from the group consisting of: microcrystalline aluminum nitride (A1N), amorphous silicon nitride ( SisN4), amorphous gallium nitride (GaN), and amorphous hard monoxide (SiO2). 13. The light-emitting diode according to item 10 of the scope of the patent application, wherein the dielectric particles are selected from the group consisting of: amorphous silicon nitride with a radius between 50 and 5000 nm (with 3 ... ), Amorphous silicon dioxide (SiO 2) with a radius of 50 to and amorphous gallium nitride (GaN) with a radius of 50 to 5000 nm. 14. The light-emitting diode according to item 10 of the scope of patent application, wherein the phosphorescent particles are microcrystals of a garnet fluorescent material having a radius between 1000 and 1000 nm. 15. The light-emitting diode according to item 1 of the scope of the patent application, wherein the above-mentioned disc particles are selected from the group consisting of gadolinium (Gd), yttrium (γ), thallium (Ce), and gadolinium (Nd) groups Phosphorescent. 16. The light-emitting diode according to item 10 of the application, wherein the phosphorescent particles include at least one group selected from the group consisting of yttrium (Y), scandium (Lu), scandium (Sc), and lanthanum (La), gadolinium (Gd), and gadolinium (Sm) elements and at least one other group selected from the group consisting of aluminum (A1), gallium (Ga), and indium (In) elements activated by ce (ce) Garnet fluorescent material. 17. The light-emitting diode according to item 10 of the scope of patent application, wherein the transparent sealant is selected from the group consisting of: hemispherical lens, ring 516247 oxyresin, lenticular lens sheet, sheet glass, polymethyl Polymethyl methacylate (PMMA) sheet plastic and polycarbonate (polycarbonate) sheet plastic. 18. The light-emitting diode according to item 1 of the scope of the patent application, wherein the scattered light medium absorbs a portion of the light emitted by the light-emitting member and emits a light having a wavelength different from the absorbed light. 19. The light-emitting diode according to item 1 of the scope of patent application, wherein a laser diode (LD) is used in place of the light-emitting diode. 20. A laser diode (LD) includes: a light-emitting member for emitting light, including a transparent sealant; and a scattering light medium added to the transparent sealant, wherein the scattering light medium is phosphorescent particles and pores Of a mixture. 21. The laser diode according to item 20 of the scope of patent application, wherein the pores of the scattered light medium are selected from the following groups: air bubbles, nitrogen bubbles, and inert gas bubbles. 22. The laser diode according to item 20 of the patent application scope, wherein the energy gap of the scattered light medium is greater than 3eV. 23. The laser diode according to item 20 of the scope of patent application, wherein the above-mentioned scattered light medium does not absorb blue light. 24. The laser diode as described in item 20 of the patent application scope, wherein the transparent sealant further includes garnet fluorescent materials selected from the following groups: gadolinium (Gd), yttrium (Y), thorium (Ce) And “(M) -based phosphorescence. -4- 25. The laser diode as described in item 20 of the patent application scope, wherein the transparent sealant further includes garnet fluorescent materials selected from the following groups: Ag: ZnS, CuAuAl: ZnS, CuAl: ZnS , Mg4 (F) Ge〇5: Μη and Ce: YAG 〇26. The laser diode described in item 20 of the patent application scope, wherein the transparent sealant further includes garnet fluorescent materials selected from the following groups : Coumarin (Coumarin 6), Fluorol 7GA, DCI, Rhodamine 11.0, DCM, ° fc ° (Pyridinel) and ° specific bite (Pyridine 2). 27. The laser diode according to item 20 of the scope of the patent application, wherein the scattered light medium further includes a dielectric phosphor powder made of crystalline phosphor particles and dielectric particles. 28. The laser diode as described in item 27 of the scope of patent application, wherein the concentration of the phosphorescent particles is 2% to 25% of the total volume of the dielectric phosphor powder (DPP) described above. In the laser diode, the dielectric particles are selected from the group consisting of microcrystalline aluminum nitride (A1N), amorphous silicon nitride (Si3N4), and amorphous gallium nitride (GaN). ) And amorphous silicon dioxide (SiO2). 30. The laser diode according to item 27 of the scope of the patent application, wherein the dielectric particles are selected from the group consisting of amorphous silicon nitride (Si3N4) with a radius between 50 and 5000 nm, Amorphous silicon dioxide (SiO2) with a radius between 50 and 5000nm and amorphous gallium nitride (GaN) with a radius between 50 and 5000nm i 31. As described in item 27 of the scope of patent application Laser diode, wherein the light-filling particles are microcrystals of garnet fluorescent material with a radius between 1000 and 10000 nm. 32. The laser diode according to item 27 in the scope of the patent application, wherein the phosphorescent particles are selected from the group consisting of gadolinium (Gd), yttrium (γ), thallium (Ce), and Syria (Nd) Base phosphorescent. 33. The laser diode according to item 27 of the scope of the patent application, wherein the light-structuring particles include at least one group selected from the group consisting of: Ji (Y), lock (Lu), 铳 (Sc), Lanthanum (La), gadolinium (Gd), and gadolinium (Sm) elements and at least one other group selected from the group consisting of aluminum (A1), gallium (Ga), and copper (In) are activated by europium (Ce) Garnet fluorescent material. 34. The laser diode as described in item 20 of the scope of the patent application, wherein the transparent sealant is selected from the group consisting of a hemispherical lens, an epoxy resin, a lenticular lens sheet, a thin glass, and a polymethyl methacrylate. Polymethyl methacylate (PMMA) sheet plastic and polycarbonate (polycarbonate) sheet plastic. 35. The laser diode according to item 20 of the scope of patent application, wherein the scattered light medium absorbs a portion of the light emitted by the light emitting member and emits a light having a wavelength different from the absorbed light.