TW518632B - Manufacturing process of cathode plate for nano carbon tube field emission display - Google Patents
Manufacturing process of cathode plate for nano carbon tube field emission display Download PDFInfo
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Abstract
Description
518632 — ^^- 五、發明說明(1) 1 --- 發明領域 本發明係關於場發射顯示器(field emissi〇n display ’FED)。特別是關於一種奈米碳管(^1^〇11 nan〇 tUbe,CNT)場發射顯示器之陰極板(cathode plate)與製 程。 發明背景 士 雖然液晶顯不器(1 iquid crystal display,LCD)是 日守下最普及的顯不螢幕。然而很多新的顯示器技術也不斷 的研發。場發射顯示器是一種取代液晶顯示器且有前景的 技術,利用冷陰極發射器尖端(⑶丨d cathode emitter tips)作為電子的來源,以取代陰極射線管(cath〇de ray tube)的熱陰極電子搶(h〇t cath〇(Je electron guη)。當 場發射顯不器置於電場時,發射器尖端對著塗上螢光粉 (phosphor)的陽極基板(an〇de substrate)的方向,射出 一束的電子。 圖1為一傳統之場發射顯示器的結構示意圖。利用電 場將陰極玻璃基板丨〇 1上的冷陰極丨〇 2發射器尖端丨〇 3的電 子吸引出’在真空環境下離開陰極板的場發射電子受陽極 玻璃基板1 0 4,上正電壓的加速吸引,撞擊至陽極1 〇 5的螢光 粉 1〇6 而發光(luminescence)。518632 — ^^-5. Description of the invention (1) 1 --- Field of the invention The present invention relates to a field emission display (field emission display 'FED). In particular, it relates to a cathode plate and a process for a nano-carbon tube (^ 1 ^ 〇11 nan〇 tUbe, CNT) field emission display. Background of the Invention Although liquid crystal displays (LCDs) are the most popular display screens under Japanese protection. However, many new display technologies are constantly being developed. Field emission display is a promising technology that replaces liquid crystal displays. It uses cold cathode emitter tips as a source of electrons to replace hot cathode electron grabbers in cathode ray tubes. (H〇t cath〇 (Je electron guη). When the field emission display is placed in an electric field, the emitter tip faces a direction of an anode substrate coated with phosphor, and a beam is emitted. Fig. 1 is a schematic diagram of the structure of a conventional field emission display. The electric field is used to attract cold electrons on the cathode glass substrate, 〇〇2 emitter tip, 〇03, and leave the cathode plate in a vacuum environment. The field emission electrons are attracted by the acceleration of the positive voltage on the anode glass substrate 104, and collide with the fluorescent powder 106 of the anode 105 to emit luminescence.
第5頁 518632 五、發明說明(2) 昔日場發射顯示器的陰極板大多採用厚膜網印 (screen printing)技術製作,即利用刮刀將事先調製好 的漿料刮過已圖樣化的網板,使圖案印製在基板上,如此 逐層將圖案堆疊。由於此法受限於網板之網目與網結大 小,使印製圖案的解析無法提昇,導致必須提供較=的場 發射起始電壓,才能使顯示器達到要求的亮度。此外會受 網板張力不均的影響,造成膜厚均勻性不佳與印製,^失 真,產生電場強度分佈不均與後續製程中對位困難的缺 點。 就時下的發展情形,場發射顯示器要攻佔市場,就必 須去克服上述問題’發展出另一種場發射顯示器之陰極板 的製作方法,以提高圖案解析和膜厚均勻性,並可任咅配 列圖案,進而提高顯示器的性能。 〜 發明概要 本叙明克服傳統場發射顯示器的缺點。其主要目Page 5 518632 V. Description of the invention (2) The cathode plate of the field emission display in the past is mostly made by thick film screen printing technology, that is, the pre-adjusted slurry is scraped through the patterned screen plate with a scraper. The patterns are printed on the substrate, and the patterns are stacked layer by layer in this way. Because this method is limited by the mesh and mesh size of the stencil, the resolution of the printed pattern cannot be improved, so that a relatively high field emission starting voltage must be provided in order to achieve the required brightness of the display. In addition, it will be affected by the unevenness of the screen tension, resulting in poor film thickness uniformity and printing, distortion, and the disadvantages of uneven electric field intensity distribution and alignment difficulties in subsequent processes. According to the current development situation, if the field emission display is to occupy the market, it is necessary to overcome the above problems. Develop another method of manufacturing the cathode plate of the field emission display to improve the pattern analysis and film thickness uniformity. Pattern, thereby improving the performance of the display. ~ Summary of the Invention This description overcomes the shortcomings of traditional field emission displays. Main purpose
:是盆ΐ ί:種ΐ米碳管場發射顯示器之陰極板的製作 法。,、主要原理疋利用感光性導電漿料與可蝕刻之介带 料,結合光微影(photo lith〇graphy)製程盥蝕刻% (MChlng)製程,來製作奈米碳管場發射顯^器的陰極相: It is a pot ΐ: A method for manufacturing a cathode plate of a carbon nanotube field emission display. The main principle: The use of photosensitive conductive paste and etchable media, combined with the photolithography (MChlng) process, to produce nano-carbon tube field emission display devices. Cathode phase
第6頁 518632 五、發明說明(3) 根據本發明’製作此奈米碳管場發射顯示器的陰極板 包含透明基板的ί疋供、底電極(cathode electrode)的製 作、介電層(dielectric layer)的製作、閘極層(以七6 layer)的製作和奈米碳管場發射層(CNT emissi〇rl Uyer) 的製作。這些製作過程更包含下列步驟··( a)準備一透明基 板,該透明基板備有上下兩表面,(b)將一感光性導電漿 料(photo-conductive paste)塗佈於此透明基板的一表面 上’利用光微影製程’將圖案作出,且燒結 (sintering)後完成底電極層,(c)於此底電極層的上方全 面性塗佈一層可银刻之介電材料,(d)於介電材料層的上 方全面性塗佈一層感光性閘極材料,再利用微影製程,作 出圖案’及燒結後形成閘極圖案,(e)再以此閘極圖案作 為保護層’結合一蝕刻製程,蝕刻掉未被閘極圖案保護之 介電層部分’隶後將奈米碳管層填入於該底電極層的上方 ,形成此陰極板結構。 在本發明之較佳實施例中,此透明基板,如玻璃基 板’備有上下兩表面。微影製程包括預烤(prebake)後, 以光罩(photo mask)定義圖案及作曝光(exp0se)和顯影 (d e v e 1 op)。奈米碳管層填入之前,該蝕刻製程係以閘極 ^案作為保護層,蝕刻此介電層得出一介電層圖案,並將 母層内的有機材料(〇rganic mater ial )燒結。而奈米碳管 層的填入可利用一電泳法(electrical deposition)或微Page 6 518632 V. Description of the invention (3) According to the present invention, the cathode plate of the nano carbon tube field emission display is made of a transparent substrate, a cathode electrode, a dielectric layer, and a dielectric layer. The fabrication of the gate layer (seven to six layers) and the fabrication of the nano carbon tube field emission layer (CNT emissiorl Uyer). These manufacturing processes further include the following steps: (a) preparing a transparent substrate, the transparent substrate is provided with upper and lower surfaces, and (b) applying a photo-conductive paste to a transparent substrate On the surface, a pattern is made using a photolithography process, and the bottom electrode layer is completed after sintering. (C) A layer of silver-etchable dielectric material is coated on the bottom electrode layer, (d) A layer of photosensitive gate material is completely coated on the dielectric material layer, and then a pattern is formed by using a photolithography process and a gate pattern is formed after sintering. (E) The gate pattern is used as a protective layer to combine one In the etching process, a portion of the dielectric layer that is not protected by the gate pattern is etched, and then a carbon nanotube layer is filled on the bottom electrode layer to form the cathode plate structure. In a preferred embodiment of the present invention, the transparent substrate, such as a glass substrate, is provided with upper and lower surfaces. The lithography process includes prebake, defining a pattern with a photo mask, and performing exposure (expose) and development (d e v e 1 op). Before the nano-carbon tube layer is filled, the etching process uses the gate electrode as a protective layer, and the dielectric layer is etched to obtain a dielectric layer pattern, and the organic material (〇rganic mater ial) in the mother layer is sintered. . The nano carbon tube layer can be filled by an electrophoresis method or micro
五、發明說明(4) 影法等來完成。 ’也可 閘極層 根據本發明,繼步驟(b )之底電極製作完成後 以先以網印方式印製奈米碳管層,再製作介電声 及經介電層蝕刻而完成陰極板結構。 曰 根據本發明,此種奈米碳管場發射顯 提向圖案解析與膜厚均勾性,並可任音;極板可 =構再與陽極板封裝組合即完成-奈米碳二=極 為陣列(Held emisslon array)。 a吕琢毛射顯示 在本發明之一較佳實施例中,爷 為每平方公分3 0 0至5 0 0毫焦耳,顧二:::程於曝光能量 的室溫下,〇· 5〜〇· 7的重量百八 v。条件為攝氏20至25度 線距(1 i n e S P a c e )的線寬為3 0 “ m野X射絲員示器陣列為每 法印製的圖案,本發明大大提高解相較於利用傳統網印 解析可在閘電極製作時—併決=,、、斤’且結構中介電層的 僅縮減製程且使顯示器的。μ、= 減少了煩複的對位,不 J 口口貝侍到改善。 說明及專利申請範 點詳述於后。 兹配合下歹嶋、實施例之詳細 圍,將上述及本發明之其他目的與優 發明之詳細說明 518632 五、發明說明(5) 的-口根據士發明之奈米碳管場發射顯示器之陰極板 201、-底。考圖2a ’此陰極板主要包含有—透明基板 層207和二:極層乂即陰極層)2 0 3、—介電層2 0 5、-閘極 曰 示米碳管層2 0 9。除透明基板2 〇 1外,由忘& 曰 氐電極層2 0 3具有複數條相互平形的長線仡 介電層m和閑極層207分別具有複數條;以=:·夂 交叉’問極層於交叉處形成圓洞開口々長米線:=垂直 填於此閘極層的圓洞内。 、反e層209則 根據本發明,介電層的結構也可以 增加-次微影製程,僅將對應於閘極的;;=出但須 本發明之車父佳貫施例中,底電極展^入 的線寬/線距的範圍可以是3〇 "/3〇二和二電層之橫線條 而示於圖中之閘極層圓洞可以是1〇〜 em/50 //m。 的厚度範圍約為3.5〜5.5/^,介電#/广開口。底電極層 1〇〜30 ,閘極層的厚度範圍約為^ ^谷度範圍約為 場的厚度範圍約為3〜5 // m。 ’ .〜5 · 5 V m ’奈米碳管 此陰極基板結構,再與_典型之p 板封裝組合即完成一奈米碳管場 每發射顯示器陽極基 又、頌示器陣列。圖2b為 518632V. Description of the invention (4) The shadow method is completed. 'Also, according to the present invention, the gate electrode layer may be printed with a carbon nanotube layer by screen printing after completion of the bottom electrode of step (b), and then a dielectric acoustic and a dielectric layer etching may be performed to complete the cathode plate. structure. Said according to the present invention, such nanometer carbon tube field emission is significantly improved in pattern analysis and film thickness, and can be used for any sound; the electrode plate can be combined with the anode plate package to complete-nanocarbon two = extremely Array (Held emisslon array). a Lu Zhuomao shows that in a preferred embodiment of the present invention, the master is 300 millijoules per square centimeter to 500 millijoules per square centimeter, Gu Er ::: at the room temperature of the exposure energy, 0.5 to 5 Weight of 7 hundred eighty v. The condition is that the line width of a line spacing of 20 to 25 degrees Celsius (1 ine SPace) is 30 "m wild X-ray indicator array is a pattern printed by each method, the present invention greatly improves the resolution compared with the use of traditional web Printing and analysis can be done at the time of making the gate electrode—and the process of reducing the dielectric layer in the structure and making the display are reduced. Μ, = reduces the troublesome alignment, and does not improve. The description and the details of the patent application are detailed below. In conjunction with the following detailed description of the examples, the above and other objects and preferred inventions of the present invention are described in detail 518632 V. Explanation of the invention (5) The cathode plate 201, bottom of the nanometer carbon tube field emission display invented by the company. Consider Figure 2a 'This cathode plate mainly contains-transparent substrate layer 207 and 2: polar layer (ie cathode layer) 2 0 3,-dielectric Layer 205. The gate electrode is a carbon nanotube layer 209. In addition to the transparent substrate 001, the 忘 electrode layer 203 has a plurality of long parallel lines 仡 dielectric layers m and The leisure pole layer 207 has a plurality of pieces, respectively; a circle hole opening is formed at the intersection with =: · 夂 crossing. Line: = Filled vertically in the circular hole of the gate layer., Anti-e layer 209 according to the present invention, the structure of the dielectric layer can also be increased-sub-lithographic process, which will only correspond to the gate; However, in the embodiment of the car driver Jiaguan of the present invention, the range of the line width / space between the bottom electrodes can be 30 ° and the horizontal lines of the two and two electric layers are shown in the gates in the figure. The electrode layer circular hole can be 10 ~ em / 50 // m. The thickness range is about 3.5 ~ 5.5 / ^, the dielectric # / wide opening. The bottom electrode layer is 10 ~ 30, and the thickness of the gate layer is about ^ ^ The degree of valley range is about 3 ~ 5 // m. The thickness range of the field is about 3 ~ 5 // m. '. ~ 5 · 5 V m' Nanocarbon tube This cathode substrate structure is combined with _ typical p-plate package to complete a The nano-carbon tube field emits an anode base and an array of horns for each display. Figure 2b is 518632
一典型之場發射顯示器之陽極板的一頂視圖,此陽極板包 含有一面板2 1 1、一透明電極層2丨3和一螢光體層2 15。 以下以一較佳實施例配合圖3〜圖6的製作流程詳細說 明圖2a之本發明之底電極層、介電層、閘極層和奈米碳管 場發射層的製作流程。 圖3a和圖3b說明了本發明之陰極板之底電極層的製作 流程。參考圖3 a,此底電極層的製作過程更包含下列步 驟··( a)準備一透明基板2 〇 1,該透明基板備有上下兩表面 ’(b)將一感光性導電漿料3(H塗佈於此透明基板2〇1的一 表面上,利用微影製程,且燒結後完成底電極層2 〇 3。微 影製程包括經預烤後以光罩3 〇 3定義圖案,並作曝光3 0 5和 顯影。圖3 b為顯影完成後之底電極層2 〇 3之圖案的一個剖 面結構示意圖。 本發明之較佳貫施例中,感光性導電漿料可以是由銀 (Ag)、鎳(Ni)或鉻(Cr)專導電金屬粉末(p〇wder)與三曱基 戊 ^—酉予早異丁 S日(trimethylpentanediol monoisobutyrate)、壓克力樹脂(acrylic resin)〈曱基 丙細酉义自曰(methyl acrylate)專樹脂,加溶劑(s〇ivent)與 感光劑調成具感光性漿料而成,燒結溫度(sintering temperature)和處理時間約為於空氣(air)氣氛下、攝氏 480〜5 6 0度下燒結30分鐘。而透明基板如玻璃基板。A top view of an anode plate of a typical field emission display. The anode plate includes a panel 2 1 1, a transparent electrode layer 2 3 and a phosphor layer 2 15. The manufacturing process of the bottom electrode layer, the dielectric layer, the gate layer and the nanometer carbon field emission layer of the present invention shown in FIG. Figures 3a and 3b illustrate the manufacturing process of the bottom electrode layer of the cathode plate of the present invention. Referring to FIG. 3a, the manufacturing process of the bottom electrode layer further includes the following steps ... (a) A transparent substrate 2 is prepared. The transparent substrate is provided with upper and lower surfaces. (B) A photosensitive conductive paste 3 ( H is coated on one surface of this transparent substrate 201, and a lithography process is used, and the bottom electrode layer 203 is completed after sintering. The lithography process includes pre-baking to define a pattern with a photomask 3 〇3, and making Exposure 305 and development. Figure 3b is a schematic cross-sectional structure diagram of the pattern of the bottom electrode layer 203 after the development is completed. In a preferred embodiment of the present invention, the photosensitive conductive paste may be made of silver (Ag ), Nickel (Ni) or chromium (Cr) special conductive metal powder (powder) and tris (pentyl) pentoxide (trimethylpentanediol monoisobutyrate), acrylic resin (acrylic resin) Cryptomethyl methyl acrylate special resin is prepared by adding a solvent (siovent) and a photosensitizer to a photosensitive paste. The sintering temperature and processing time are about the air atmosphere. Sintering at 480 ~ 560 ° C for 30 minutes, and transparent substrates such as glass Board.
第10頁 518632 五、發明說明(7) 底電極層2 0 3完成後,在底電極層的上方再全面性塗 佈:層可I虫刻之介電材料,作為介電層2〇5,其剖面結構 示思圖如圖4所示。 石夕(s.t 例中’介電層材料可以是由二氧化 i,1/) 1化職甽)、氧化鐘(Li2Q)、氧化錯(Pb02)、 =化㈣〇2)等粉末與三甲基戊二醇單異丁_、壓克2力 s、曰曱基丙烯酸酯等樹脂’加溶劑調成漿料而成。 圖5 a和圖5 b說明本菸明夕昤代〇 - 程。表者m R $月之陰極板之閘極層的製作流 >考圖5a ’於此介電層2〇5的上方全 涂 一 光性閘極材料5 0 1,再利用# 制 主佈一層感 之前Γ將介本電’將全Λ性内塗Λ感光性閘極材料501 溫度和處理時間約為;4?巧的:機材料燒掉。燒結 結30分鐘。光微影穿=孔汛下、攝氏480〜54〇度下燒 並作曝光5。5二影。#=括預烤後以光罩5〇3定義圖案, J 、、、°構不意圖。 本發明之較佳實施例 和處理時間與上述底 · ▼ η ^的材料和燒結溫度 四电極層雷同。 上述之塗佈方式有旋轉( spin)、滾軸(roller)和網印Page 10 518632 V. Description of the invention (7) After the bottom electrode layer 203 is completed, a comprehensive coating is performed on the bottom electrode layer: the layer can be etched dielectric material as the dielectric layer 205, Its cross-sectional structure is shown in Figure 4. Shi Xi (the material of the dielectric layer in the example of st can be made of powder i, 1 /) 1), oxidized clock (Li2Q), oxidized oxide (Pb02), = chemical solution, and the top three Resins such as pentyl glycol monoisobutyl, acrylic 2 s, fluorenyl acrylate, etc. are prepared by adding a solvent to a slurry. Fig. 5a and Fig. 5b illustrate the generation process of this smoke tomorrow evening. The flow of the fabrication of the gate layer of the cathode plate of the R & M cathode is shown in Fig. 5a 'on top of this dielectric layer 205 is coated with an optical gate material 5 0 1 and reused # # 主 主 布Previously, Γ will dielectrically coat the full Λ photoresistive gate electrode material 501 with a temperature and processing time of about 4,000; the ingenious: the machine material burns out. Sintered for 30 minutes. Light lithography penetration = burned under hole flood, 480 ~ 54 degrees Celsius, and exposed for 5.5 two shadows. # = Including pre-bake to define the pattern with a mask 503, J ,,, and ° are not intended. The preferred embodiment and processing time of the present invention are similar to those of the above-mentioned materials and sintering temperature of the four electrode layers. The above coating methods include spin, roller and screen printing.
第11頁 518632 五、發明說明(8) 三種方式。以上各層之材料的溶劑可為叛酸(c a r b ο X y 1 i c acid)、脂肪族酸(aliphatic acid)、乙基4-二曱氨苯曱 酸酉旨(ethyl 4-dimethylamin〇 benzoate)、2,2-甲氧基-2-苯基苯乙酮(2, 2-dimethoxy-2-phenyl acetophenone) 的混合。漿料的固體含量(s〇Hd content)約為5Q〜π%。 圖6a和圖6b說明本發明之陰極板之奈米碳管場發射層 的製作流程。參考圖6a,閘極層顯影完成後,再以此閘^ 圖案2 0 7作為保護層,結合一蝕刻製程,將奈米碳管層μ 9 填入於底電極層2 0 3的上方,形成一陰極板結構。本二施 例中,此蝕刻製程係蝕刻介電層2〇5得出一介電声二 :,並將每層内的有機材料燒掉,燒結後的心、;:如 圖b贫所不。 ::本發明,奈米碳管層2〇9的製作可 影法將奈米碳管層填人於底電極層203的上方,也== 一電;f電著-奈米碳管層於底電極層203的上=用 t :二=t結構完成後的一個剖面結構示意圖。以下久明 此兩種奈米碳管層的製作方法。 以下况明 从儆影法製作 感光性的奈米碳管配料二::J :列步驟:U)將具 ⑻以此閑極圖案m作為保護層:=::陰極板上, 義出來,⑷於高溫爐中,於氣;(二Page 11 518632 V. Description of the invention (8) Three ways. The solvents of the materials of the above layers can be carb ο X y 1 ic acid, aliphatic acid, ethyl 4-dimethylamin〇benzoate, 2 A mixture of 2,2-dimethoxy-2-phenyl acetophenone. The solid content of the slurry (s0Hd content) is about 5Q ~ π%. Figures 6a and 6b illustrate the fabrication process of a nano-carbon tube field emission layer of a cathode plate of the present invention. Referring to FIG. 6a, after the development of the gate layer is completed, the gate ^ pattern 2 7 is used as a protective layer, and a nano carbon tube layer μ 9 is filled on the bottom electrode layer 2 0 3 in combination with an etching process to form A cathode plate structure. In this second embodiment, the etching process is to etch the dielectric layer 205 to obtain a dielectric acoustic II :, and burn off the organic material in each layer, and the sintered core is as shown in Figure b. . :: In the present invention, the production of the nano-carbon tube layer 209 can fill the nano-carbon tube layer on the bottom electrode layer 203, which is also == a charge; The top electrode layer 203 is a schematic diagram of a cross-sectional structure after t structure is completed. The following is how to make these two carbon nanotube layers. The following conditions are used to make photosensitive nano carbon tube ingredients from the shadow method: 2: J: column step: U) will be used as a protective layer with this idle electrode pattern m: = :: cathode plate, meaning out, ⑷ In a high-temperature furnace, in the gas; (two
518632 五、發明說明(9) ------ 480〜5 0 0度下燒結30分鐘。 感光性的奈米碳管配料為5〜3 〇的重量百分比的太 管粉和5〜30的重量百分比的銀粉,再與正型或:;且: 混合而成。 庀阻劑 以電泳法製作奈米碳管層依序包括下列步驟:(a ) 型或負型光阻劑全面塗佈於圖讣所示的陰極板上,(、 此閘圖案2 0 7作為保護層,利用對位曝光將圖案定義出 ’(c)將奈米碳官配料電著於圖案内,其中通電3 5伏特= 約30〜60秒,(d)於高溫爐中,於氮氣氣氛下、攝氏, 48 0〜5 0 0度下燒結30分鐘。 产 電泳法的奈米碳管配料為3〜5 0的重量百分比的奈米碳 管粉和水(HJ)等溶劑,再與如每升〇· 〇2〜〇· 2克之醋酸甲A 基纖維素(carboxyl methyl cellulose ’CMC)的分散劑 (dispersant)混合而成。 除了圖3〜圖6的製作流程外,本發明之陰極板的另一 較佳貫施例的製作流程依序包含透明基板的提供、底電極 的製作、奈米碳管層的製作、介電層的製作,和閘極層的 製作。換言之’繼圖3b之底電極製作完成後,先製作奈米 石反官層’再製作介電層、閘極層及經介電層蝕刻而完成陰 極板,圖7〜圖1 0之元件標示依序說明了這些製作流程。518632 V. Description of the invention (9) ------ Sintering at 480 ~ 500 ° for 30 minutes. The photosensitive nano carbon tube is composed of 5 to 30 weight percent of the tube powder and 5 to 30 weight percent of the silver powder, and then mixed with the positive type or :; and: The photoresist used in electrophoresis to produce a carbon nanotube layer in sequence includes the following steps: (a) or negative photoresist is fully coated on the cathode plate shown in Figure ,, (, this gate pattern 2 0 7 as The protective layer, the pattern is defined by positional exposure. (C) The nano-carbon official ingredients are electrographed in the pattern, where the current is 35 volts = about 30 to 60 seconds, (d) in a high temperature furnace in a nitrogen atmosphere. Sintering at 48 ° ~ 500 ° C for 30 minutes. The carbon nanotubes produced by electrophoresis method are 3 ~ 50 weight percent of carbon nanotube powder and water (HJ) and other solvents. 0.2 to 0.2 grams per liter of a dispersant of carboxyl methyl cellulose 'CMC. In addition to the manufacturing process of FIGS. 3 to 6, the cathode plate of the present invention The manufacturing process of another preferred embodiment of the method includes sequentially providing a transparent substrate, manufacturing a bottom electrode, manufacturing a carbon nanotube layer, manufacturing a dielectric layer, and manufacturing a gate layer. In other words, following FIG. 3b After the fabrication of the bottom electrode is completed, the nanostone anti-official layer is first produced, and then the dielectric layer, the gate layer and the dielectric layer are fabricated. Layers are etched to complete the cathode plate. The component labels in Figures 7 to 10 illustrate these manufacturing processes in order.
第13頁 518632Page 13 518632
% “圖:所:為繼圖扑之後,Μ用網印方式將奈米碳管層 2二印‘於底電極層2〇3之圖案上。之後再全面性塗佈一層 U之介電材料,作為介電層2〇5,如圖8所示。圖9a和 :从°兄:閘極層的製作流程’與圖5a和圖5b中之閘極層的 ^方t相同,因而延用其元件標示,但不再重述說明。 ==二之閘極層2〇7的圖案顯影完成後,再以此閘極圖 6^ ί蔓層’银刻介電層邮,得出介電層圖案 601 ’亚將母層内的有機材料燒掉, 本發明之陰極板結構。 兀成 —根,本發明’介電層的解析可在閘電極製作時一併決 :厚Si須並且提高圖案解析和 而圖案也可任意配列。 声盥㈡^ :據本發明之奈米碳管場發射層陰極板之陰極 瑨興閘極層的昭κ ^ ^ 構為_極声R ^ 大後的一個示意圖,其中,橫粗線結 構”案11〇1 ’而垂直的圖案結構為 ^圖干)為;?層1105填於5〇"的圓洞内,介電層(未示 以微景;、、去V"制作層圖案1103底下。奈米破管層的填入係 300至_毫巧:^影製程於曝光能量為每平方公分 '、、 頦衫條件為攝氏2 0至2 5度的室溫下, 屮太、。重$百分比的碳酸鉀(κπ〇3)溶液的情況下,得 、不入妷官場發射顯示器陣列為每線距的線寬為3 〇 a m% "Picture: So: Following the figure, M printed the carbon nanotube layer 2 on the pattern of the bottom electrode layer 203 by screen printing. After that, a layer of U dielectric material was completely coated. As the dielectric layer 205, as shown in Fig. 8. Fig. 9a and: from the brother: the fabrication process of the gate layer is the same as that of the gate layer in Figs. 5a and 5b, so it is continued to be used. Its components are marked, but the description will not be repeated. == After the development of the pattern of the gate electrode 207 of Erzhi is completed, the gate electrode is then etched with a dielectric layer of silver as shown in Figure 6 ^. The layer pattern 601 'sub-burns out the organic material in the mother layer, and the cathode plate structure of the present invention. Wu Cheng-Root, the analysis of the' dielectric layer of the present invention 'can be combined during the fabrication of the gate electrode: thick Si whisker and increase Pattern analysis and patterns can also be arbitrarily arranged. Acoustic bath ^: According to the present invention, the structure of the cathode layer of the cathode plate of the nano-carbon tube field emission layer of the anode layer of the cathode is structured as _ 极 声 R ^ A schematic diagram, in which the horizontal and thick line structure "case 1101 'and the vertical pattern structure is ^ figure dry) is; the layer 1105 is filled in the circular hole of 50 ", a dielectric layer (not shown in micro Scenery, go to the V " production layer pattern under 1103. The filling system of the nano tube broken layer is 300 to _ clever: ^ The filming process is based on the exposure energy per square centimeter, and the shirt condition is 20 to 2 degrees Celsius. At a room temperature of 5 ° C, in the case of a potassium carbonate (κπ〇3) solution with a weight percentage of 0.1%, the line width of each line interval is 30 Å, which is not included in the official emission display array.
518632518632
相板於傳統網制安 製的陰極層圖安Γ &法P衣的圖本,圖1 2為比較網印法印 明之結合微影:(,寬為100⑽以上的橫粗線”川與本發 線)1 2 0 3之照片:的陰極一層圖案(線寬為3 〇 V m的垂直細 大地提高解析门大後的示意圖,*圖12可窺知本發明大 V,因而使顯示器的品質得到改善。 帝好:上2述,本發明利用感光性導電漿料與可蝕刻之介 二印 '、、"合微影製程與蝕刻製程,來製作奈米碳管場發 挥二不态的陰極板克服了傳統網印法印製圖案的解析無法 安二的缺點。不僅製程簡單,並且膜厚均勻性佳,印製圖 =Γ任意配列也不會失真,更無電場強度分佈不均或是後 、’、貝‘程中對位困難等缺點。 处唯’以上所述者,僅為本發明之較佳實施例而已,當 不=以此限定本發明實施之範圍。即大凡依本發明申請專 利範圍所作之均等變化與修飾,皆應仍屬本發明專利= 之範圍内。 |The phase plate is a picture of the cathode layer made by the traditional screen system. Figure 12 shows the combined photolithography printed by the screen printing method: (, a thick line with a width of more than 100 ”" and Kawamoto Photograph: 1 2 03: Photograph of the first layer of the cathode (a line width of 30V m and a vertical fine-grained image that greatly improves the resolution of the gate. * Figure 12 shows the large V of the present invention, thus improving the quality of the display. Dilihao: As mentioned in the second paragraph, the present invention uses a photosensitive conductive paste and an etchable medium to be printed on the substrate, and combines the lithography process and the etching process to make a nano carbon tube field. The cathode plate overcomes the shortcomings that the traditional screen printing method cannot be used to analyze the printed pattern. Not only is the process simple, but the film thickness is uniform, and the printed image will not be distorted in any arrangement, and there is no uneven distribution of the electric field strength. Or the disadvantages of difficulty in alignment during the process of "backward", "backward", "backward", etc. The ones mentioned above are only the preferred embodiments of the present invention, and it is not used to limit the scope of the present invention. The equal changes and modifications made in the scope of the patent application of the present invention shall still belong to the present invention. = Within the scope of the patent. |
518632 圖式簡單說明 圖式簡單說明 圖1為一傳統之場發射顯示器的結構示意圖。 圖2 a為根據本發明之奈米碳管場發射顯示器之陰極板的一 頂視圖。 圖2b為一典型之場發射顯示器之陽極板的一頂視圖。 圖3〜圖6詳細說明圖2 a之陰極板之底電極層、介電層、閘 極層和奈米碳管場發射層的製作流程。 圖3a和圖3b說明本發明之陰極板之底電極層的製作流程。 圖4說明本發明之陰極板之介電層的製作流程。 圖5a和圖5b說明本發明之陰極板之閘極層的製作流程。 圖6 a和圖6 b說明本發明之陰極板之奈米碳管場發射·層的製 作流程。 圖7說明繼圖3b後,將奈米碳管層印製於底電極層之圖案 上的製作流程。518632 Brief description of the drawings Brief description of the drawings Figure 1 is a schematic diagram of the structure of a conventional field emission display. Figure 2a is a top view of the cathode plate of a nano-carbon tube field emission display according to the present invention. Figure 2b is a top view of the anode plate of a typical field emission display. 3 to 6 illustrate the manufacturing process of the bottom electrode layer, the dielectric layer, the gate layer, and the nano-carbon tube field emission layer of the cathode plate of FIG. 2a in detail. 3a and 3b illustrate the manufacturing process of the bottom electrode layer of the cathode plate of the present invention. FIG. 4 illustrates a manufacturing process of a dielectric layer of a cathode plate of the present invention. 5a and 5b illustrate the manufacturing process of the gate layer of the cathode plate of the present invention. Fig. 6a and Fig. 6b illustrate the manufacturing process of the field emission and layer of the nano carbon tube of the cathode plate of the present invention. Fig. 7 illustrates the manufacturing process of printing the carbon nanotube layer on the pattern of the bottom electrode layer after Fig. 3b.
第16頁 518632Page 16 518632
圖式簡單說明Schematic illustration
一層可蝕刻之介電材料 圖8說明繼圖7後,再全面性塗佈 作為介電層的製作流程。 圖9a和圖9b說明繼圖8後,閘極層的製作流程 圖1 〇說明繼圖9後 構0 I虫刻介電層而完成本發明之陰極板結 圖Π為根據本發明之奈米碳管場發射層陰極板之陰極層與 閘極層的照片放大後的示意圖。 1 2 圖1 2為比較網印法印製的陰極層圖案與本發明之結合光微 影製程的陰極層圖案之照片放大後的示意圖。 圖號說明 1 〇 1陰極玻璃基板 1 〇 3發射器尖端 1 0 5 陽極 1 0 2 冷陰極 1 〇 4陽極玻璃基板 1 〇 6螢光粉 2 0 3 底電極層 2 0 7間極層A layer of etchable dielectric material FIG. 8 illustrates the manufacturing process of a comprehensive coating as a dielectric layer after FIG. 7. Figures 9a and 9b illustrate the flow chart of the fabrication of the gate layer following Figure 8. Figure 10 illustrates the structure of the cathode plate of the present invention after the dielectric layer is formed by the etched dielectric layer following Figure 9. Figure 2 shows the nano-structure of the present invention. The enlarged picture of the cathode layer and the gate layer of the cathode plate of the carbon tube field emission layer. 1 2 FIG. 12 is a schematic diagram showing an enlarged photograph comparing a cathode layer pattern printed by a screen printing method with a cathode layer pattern combined with the photolithography process of the present invention. Description of drawing number 1 〇 1 cathode glass substrate 1 〇 3 emitter tip 1 0 5 anode 1 0 2 cold cathode 1 〇 4 anode glass substrate 1 〇 6 fluorescent powder 2 0 3 bottom electrode layer 2 0 7 interlayer
第17頁 1 0 1透明基板 2 0 5介電層 2 2 0 9奈米碳管層 518632 圖式簡單說明 2 11面板 21 3透明電極層 2 1 5螢光體層 3 0 1感光性導電漿料 3 0 3光罩 3 0 5 曝光 5 0 1感光性材料 5 0 3光罩 5 0 5 曝光 601介電層圖案 11 0 1 陰極層圖案 11 0 3閘極層圖案 11 0 5奈米碳管層 1 2 0 1 傳統網印法印製的陰極層圖案 1 2 0 3 本發明之結合微影製程的陰極層圖案Page 17 1 0 1 Transparent substrate 2 0 5 Dielectric layer 2 2 0 9 Nano carbon tube layer 518632 Simple illustration 2 11 Panel 21 3 Transparent electrode layer 2 1 5 Phosphor layer 3 0 1 Photosensitive conductive paste 3 0 3 mask 3 0 5 exposure 5 0 1 photosensitive material 5 0 3 mask 5 0 5 exposure 601 dielectric layer pattern 11 0 1 cathode layer pattern 11 0 3 gate layer pattern 11 0 5 nanometer carbon tube layer 1 2 0 1 Cathode layer pattern printed by traditional screen printing method 1 2 0 3 Cathode layer pattern combined with lithography process of the present invention
第18頁Page 18
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| TWI427675B (en) * | 2009-03-27 | 2014-02-21 | 鴻海精密工業股份有限公司 | Incandescent light source display device and preparation method thereof |
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