TW524867B - A processing method of silicon epitaxial growth wafer and a processing apparatus thereof - Google Patents

A processing method of silicon epitaxial growth wafer and a processing apparatus thereof Download PDF

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Publication number
TW524867B
TW524867B TW089103465A TW89103465A TW524867B TW 524867 B TW524867 B TW 524867B TW 089103465 A TW089103465 A TW 089103465A TW 89103465 A TW89103465 A TW 89103465A TW 524867 B TW524867 B TW 524867B
Authority
TW
Taiwan
Prior art keywords
wafer
cavity
plasma
epitaxial growth
silicon
Prior art date
Application number
TW089103465A
Other languages
English (en)
Chinese (zh)
Inventor
Michihiko Yanagisawa
Shinji Okawa
Kozo Abe
Original Assignee
Speedfam Ipec Co Ltd
Super Silicon Crystal Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Speedfam Ipec Co Ltd, Super Silicon Crystal Res Inst filed Critical Speedfam Ipec Co Ltd
Application granted granted Critical
Publication of TW524867B publication Critical patent/TW524867B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
TW089103465A 1999-03-08 2000-02-29 A processing method of silicon epitaxial growth wafer and a processing apparatus thereof TW524867B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11060379A JP2000256094A (ja) 1999-03-08 1999-03-08 シリコンエピタキシャル成長ウェーハ製造方法およびその装置

Publications (1)

Publication Number Publication Date
TW524867B true TW524867B (en) 2003-03-21

Family

ID=13140461

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089103465A TW524867B (en) 1999-03-08 2000-02-29 A processing method of silicon epitaxial growth wafer and a processing apparatus thereof

Country Status (4)

Country Link
EP (1) EP1035576A3 (de)
JP (1) JP2000256094A (de)
KR (1) KR100634659B1 (de)
TW (1) TW524867B (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI600071B (zh) * 2016-04-28 2017-09-21 上海新昇半導體科技有限公司 提高矽晶片磊晶層表面平整度之方法
TWI884418B (zh) * 2022-12-07 2025-05-21 大陸商西安奕斯偉材料科技股份有限公司 晶圓的磊晶生長方法及設備

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6451217B1 (en) 1998-06-09 2002-09-17 Speedfam-Ipec Co., Ltd. Wafer etching method
KR20000076861A (ko) * 1999-05-12 2000-12-26 호리이케야스히로 웨이퍼 에칭방법
WO2002052643A2 (en) * 2000-12-27 2002-07-04 Memc Electronic Materials, Inc. Semiconductor wafer manufacturing process
JP4906018B2 (ja) * 2001-03-12 2012-03-28 株式会社半導体エネルギー研究所 成膜方法、発光装置の作製方法及び成膜装置
JP4078813B2 (ja) * 2001-06-12 2008-04-23 ソニー株式会社 成膜装置および成膜方法
JP2006128559A (ja) * 2004-11-01 2006-05-18 Tokyo Electron Ltd 基板処理システム
DE102005045337B4 (de) * 2005-09-22 2008-08-21 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben
JP2010171330A (ja) * 2009-01-26 2010-08-05 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルウェハの製造方法、欠陥除去方法およびエピタキシャルウェハ
KR102014876B1 (ko) * 2011-07-08 2019-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102145276B1 (ko) * 2016-07-22 2020-08-18 어플라이드 머티어리얼스, 인코포레이티드 에피 균일성 조정을 개선하기 위한 가열 변조기
CN111876752A (zh) * 2020-08-03 2020-11-03 中国科学院长春光学精密机械与物理研究所 一种mocvd装置及半导体材料生产设备
CN114975162A (zh) * 2021-02-26 2022-08-30 格科微电子（上海）有限公司 外延-刻蚀一体机

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4579609A (en) * 1984-06-08 1986-04-01 Massachusetts Institute Of Technology Growth of epitaxial films by chemical vapor deposition utilizing a surface cleaning step immediately before deposition
JPS6114726A (ja) * 1984-06-29 1986-01-22 Fujitsu Ltd 半導体基板の処理方法
JPH01172295A (ja) * 1987-12-28 1989-07-07 Toa Nenryo Kogyo Kk エピタキシャル成長によるシリコン結晶薄膜の製造方法
GB2258783A (en) * 1991-08-14 1993-02-17 Dataproducts Corp Colour printer data signals with undercolour removal
US5336355A (en) * 1991-12-13 1994-08-09 Hughes Aircraft Company Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances and films
JP2911079B2 (ja) * 1992-12-17 1999-06-23 シャープ株式会社 化合物半導体ウェハのエッチング方法
US5877087A (en) * 1995-11-21 1999-03-02 Applied Materials, Inc. Low temperature integrated metallization process and apparatus
US5849367A (en) * 1996-12-11 1998-12-15 Texas Instruments Incorporated Elemental titanium-free liner and fabrication process for inter-metal connections
JPH10275905A (ja) * 1997-03-31 1998-10-13 Mitsubishi Electric Corp シリコンウェーハの製造方法およびシリコンウェーハ
JPH10284512A (ja) * 1997-04-02 1998-10-23 Japan Energy Corp Ｉｉ−ｖｉ族化合物半導体単結晶ウェハの製造方法およびｉｉ−ｖｉ族化合物半導体単結晶ウェハ
JP2000040305A (ja) * 1998-07-21 2000-02-08 Fujitsu Ltd 記録媒体及び記憶装置
KR20040048019A (ko) * 2002-12-02 2004-06-07 주성엔지니어링(주) 실리콘 에피텍셜층 형성방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI600071B (zh) * 2016-04-28 2017-09-21 上海新昇半導體科技有限公司 提高矽晶片磊晶層表面平整度之方法
TWI884418B (zh) * 2022-12-07 2025-05-21 大陸商西安奕斯偉材料科技股份有限公司 晶圓的磊晶生長方法及設備

Also Published As

Publication number Publication date
JP2000256094A (ja) 2000-09-19
KR20000062767A (ko) 2000-10-25
EP1035576A2 (de) 2000-09-13
KR100634659B1 (ko) 2006-10-16
EP1035576A3 (de) 2001-01-24

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