玖、發明說明 相關申請案的交互參照 本申請案爲共同讓渡之美國專利申請案第0 9/8 4 6，495號（2001年4月30曰提出申請、標題爲 “用於移除來自半導體製程廢棄物氣流之危險物質的處理 系統”）的部分連續申請案並且主張該專利申請案的優先 權，該美國專利申請案主張2 0 0 0年5月1日提出申請 之美國臨時專利申請案第6 0/2 0 0，9 5 9號的優先 權；並且係相關於並且主張標題爲“用於減弱來自於廢棄 物流之危險物質的系統與方法”，2 0 0 1年1 0月2 6 曰提出申請之美國臨時專利申請案第6 0/3 4 7，6 1 6號之優先權的利益；如於本文完全提出的，以上的專利 申請案係完整地加入本文以作爲所有目的之參考。 【發明所屬之技術領域】 本發明大體上係相關於廢棄物處理，並且，更特別地 是，本發明是相關於減弱來自於半導體製程之廢棄物氣流 的危險物質。 【先前技術】 像是化學氣相沉積（C V D )的半導體製造製程係使 用數種具有強烈毒性、高度腐蝕性、高度可燃性、高度可 自燃性、或是其他危險性的化學物品。一般來說’該製程 僅會消耗掉該等化學物品的小部份。未被消耗掉的化學物 品會與微粒相的反應產物一起當作一種廢棄物氣流離開處 理設備並且流入一個排放系統之中。因爲，該廢棄物氣流 46162 的某些成分持有危險或是有害的性質，係希望以及/或在 法律上必須在將廢棄物氣流排放到大氣之前處理該廢棄物 氣流，用以將令人無法接受之廢棄物氣體成分的排放去除 或是減少到最小的程度。 一些在商業上可獲得的廢棄物氣體處理系統可以用來 從一廢棄物氣流移除選定的氣相以及固相的物質。一種如 此的系統係被描述於美國專利第5，2 9 5，4 4 8號， 標題爲“有機化合物的焚化爐”之中。其他用於從氣流中 去除揮發性有機化合物（V 0 C s )的系統係被描述於以 下的專利之中：美國專利第5，5 3 8，5 4 1號，標題 爲“用於從空氣流去除揮發性有機化合物的裝置以及方法 ”、美國專利第5，6 6 7，5 5 9號，標題爲“用於從 空氣流去除揮發性有機化合物的裝置以及方法”、以及美 國專利第6，0 2 7，5 5 0號，標題爲“使用吸收性材 料從受到污染之空氣流去除揮發性有機化合物的裝置以及 方法”。 由於相當高的微粒負載以及與半導體製造程序相關聯 之廢棄物氣流的腐鈾性本質，先前之廢棄物氣體處理系統 的使用者通常會經驗到氣流路徑堵塞以及元件磨耗的問題 。這些問體的矯正（舉例來說，移除堆積之微粒物質或是 更換被侵蝕的元件）常常需要暫時性地關掉相關的製程設 備，而導致未經安排或是不希望有的停工期。此種未經安 排的維修時間會增加整體的製造成本，並且因而在高度競 爭以及對於價格基本需求的半導體製造工業來說有很大的 46162 問題。因此’先則之處理設備系統的使用者必須在減弱的 效率與處理系統的停工期之間做選擇。 氟是一種極爲有毒的氣體，其在百萬分之（p pm) 個位數的濃度就可能會造成死亡。因此，在將廢棄物氣流 排放到大氣之前，從廢棄物氣流去除氟以及其他酸性氣體 係爲吾人所希求者並且在法律上係爲需要者。通常，在先 前的廢棄物氣體處理系統中，爲了要使酸性氣體降低到所 需要的低標準，係需要相當大量的新鮮水，或者像是氟的 殘餘元素必須要以一個輔助濕性擦洗單元來處理。而這些 可供選擇的方式並不被認爲是最佳的。 像是四氟化碳（C F 4，在其他方面是已知的二氯二氟 代甲烷 R1 4)與六氟化二碳（C2F6，在其他方面是 已知的二氯二氟代甲烷 R 1 1 6 )的P F C s被認爲是 消耗臭氧、全球警戒性的物質。因此，在將廢棄物氣流排 放到大氣之前，從廢棄物氣流去除這些物質係爲吾人所希 求者並且在法律上係爲需要者。此外，過氟化碳化合物（ P F C s )通常與相當高的燃燒溫度有關。舉例來說，四 氟化碳在大約1 1 〇 〇 °C的溫度開始燃燒。一般來說，先 前的廢棄物氣體處理系統不是無法達到完全燃燒許多過氟 化碳化合物之物質所需的溫度，不然就是仰賴開放式火焰 來達到所需要的溫度，因而增加了在處理系統內所不希望 發生之爆炸的風險。 基於上述的理由，很淸楚的是需要一種改良式機械裝 置來處理廢棄物氣流，像是與半導體製程相關的廢棄物氣 546162 流。 此外，係需要一種有效率、可靠的系統來減弱廣泛地 各種來自於廢棄物氣流的危險物質，並且必須考慮到一般 半導體廢棄物氣流的化合物結構成分、以及存在於廢棄物 氣流處理系統之所有階段的化合物。尤其是，需要一種單 獨裝置，其能夠減少以下類別的污染物：易燃物、可自燃 物、含氟化合物、過氟化碳化合物、揮發性有機化合物、 酸性氣體、氫化物以及其他半導體容室的淸潔氣體。 【發明內容】 一種用於減弱來自廢棄物氣流之危險物質的系統包含 有（1 ) 一個熱氧化單元，其係被建構成用以基收一種廢 棄物氣流；（2)—個像是濕性擦洗單元的微粒去除器， 其係直接被接合到該熱氧化單元；（3) —個通用污水坑 底座，其係被接合至該微粒去除器以及（4 ) 一個封裝圓 柱；以及（5 ) —個乾性擦洗筒，其係被接合至該封裝圓 柱，藉以減弱在廢棄物氣流中被發現的殘餘化學成分。 相關於減少來自於廢棄物氣流之微粒氣相與固相成分 ，這些處理階段之每一個的獨特功能係被結合在一起，用 以提供一種高度破壞效率的製程，來廣泛地破壞在廢棄物 氣流中發現的目標化合物。對於可能完成之非限制性的示 例，實施例可以被用於半導體化學氣相沉積製程的減少以 及半導體蝕刻製程的減弱，用以減弱下列污染物：易燃物 、可自燃物、含氟化合物、過氟化碳化合物、揮發性有機 化合物、酸性氣體、氫化物。 546162 在一個方面中，該系統可以用一種並聯的結構來實施 ’其可以接收分開並且獨立的氣流，例如，來自於一'種二 階段半導體製程工具的氣流。此外，該二種氣流可能是彼 此可以高度地相互反應的，也就是，它們在成爲一種混合 的化合物時可能是高度可燃性的或是爆炸性的。該系統的 構造確保了不會有氣流的混合，直到爆炸性的成分已經充 分地被改變或是消除。 在一個實施例中，該熱氧化單元係用電被加熱並且最 高可以在1 2 0 0 °C運作。在這種溫度機制中運作係提供 了用於臭氧消耗物質的破壞，例如，像是四氟化碳的過氟 化碳化合物（P F C s )。再者，先前的目標係藉著一種 顯著地降低在該系統中不注意之燃燒的風險而完成，而該 不注意的燃燒通常會在氣體加熱的系統中遭遇到。 【實施方式】 減弱系統 第一圖說明了一個用於減弱來自於廢棄物氣流之危險 物質的系統1 0 0。該系統1 0 0包含有一個或更多個熱 氧化單元1 0 2、一個或是更多個微粒去除器單元1 0 4 、一個通用污水坑底座1 0 6、一個或更多個封裝圓柱1 0 8、以及一個或更多個乾性擦洗筒1 1 0。此外，該系 統1 0 0可以包括有一個或更多個在一個封裝圓柱1 0 8 與一個乾性擦洗筒1 1 0之間的光學過濾器1 1 2。 如第一圖描述地，根據一個實施例，該系統1 0 0包 含有二個並聯的熱氧化單元1 〇 2、二個微粒去除器單元 11 546162 1 Ο 4、二個封裝圓柱1 Ο 8、二個乾性擦洗筒1 1 〇、 以及二個過濾器1 1 2。然而，每個元件的的元件符號在 每個實施的情況中可能會改變。 熱氧化單元 熱氧化單元1 〇 2係被建構成用以經由一個入口來接 收一種廢棄物氣流。在一個實施例中，該廢棄物氣流是一 種像是來自於一個半導體製造工具之半導體製程的廢棄物 氣流。在一個包含有二個或更多個串聯之熱氧化單元1 0 2的實施例中，每個熱氧化單元1 0 2係被建構成用以接 收一種不同的廢棄物氣流。舉例來說，某些半導體製程工 具包含有二個進行獨立之製造程序（像是一種化學氣相沉 積（C V D )製程以及一種蝕刻製程）的獨立容室，每個 容室係會散發出一種不同的廢棄物氣流。在某些情況中， 從製造工具發散出來的二種廢棄物氣流在被混合時爲可燃 燒的。舉例來說，一個製程可以發散出可以被視爲一種氧 化劑的N F 3、以及一種可自燃性的甲矽烷（S i Η 4，s i lane)。因此，在一個其中使用了二個熱氧化單元 的實施例中，一個第一熱氧化單元1 0 2係被建構成用以 接收一個包含有一種第一氣體的第一廢棄物氣流，並且一 個第二熱氧化單元1 0 2係被建構成用以接收一個包含有 一種第二氣體的第二廢棄物氣流，其中，第一氣流與第二 氣流在混合時爲可燃的。 使用該系統1 0 0之一種減弱製程的第一步驟是在各 自的熱氧化單元1 0 2中用熱氧化一種或是更多種廢棄物 12 546162 氣流。在該熱氧化單元1 Ο 2中，該廢棄物氣流係與一種 藉著一個氧化氣體入口被注入該單元1 0 2中的氧化氣流 混合。可以包括有空氣或是一種空氣/氧氣混合物的氧化 氣流係在高壓狀態中被注入該廢棄物氣流，用以引起擾流 ，並且因此，在該熱氧化單元1 0 2中促進快速地混合該 廢棄物氣流以及該氧化氣流。該氧化氣體亦有助於將存在 於該廢棄物氣流中之可凝結的固體保持在一種氣相的狀態 ，直到它們被去除爲止。此外，被加入該廢棄物氣流之氧 化氣體的類型與數量可以根據廢棄物氣體的組成以及/或 根據減弱微粒的需求來調整。 廢棄物氣體與氧化氣體的混合物係被通過一個在該熱 氧化單元1 0 2內部的高溫反應區域，其中，該廢棄物氣 流的過氟化碳化合物、可自燃性以及可燃性的成分係在該 區域中被燃燒。在一個實施例中，熱氧化單元1 0 2包含 有一個或更多個電熱器。例如，可以使用一個傳統式輻射 陶瓷電阻加熱器、或是一種適當的替代方案。 在另一個實施例中，熱氧化單元1 0 2包含有一個被 一個或更多個電熱器遮蓋的超合金金屬管件，而廢棄物氣 流係通過該管件。在本文中，用詞“超合金”係指抗熱與 抗侵蝕的金屬。可以被選擇以用於此實施之合金的例子包 括有鎳基金屬，其中的一些爲可從專門金屬公司獲得者， 並且用以下的商標名稱販售者：INCONEL®、INC 〇LAY⑧、NIM〇NIC⑧、以及M〇NEL⑧，或是可 以從海恩斯國際公司獲得，並且用以下的商標名稱販售： 13 546162 HAYNE S⑧、以及HASTE L L〇Y®。可以使用的 此種金屬爲INC〇NEL®60 1。 由於被利用在熱氧化單元中之各種位置處的金屬構成 ，該超合金金屬管件的表面以及因而該熱氧化單元1 0 2 能夠在1 2 0 0 °C的溫度下運作。在這樣高的溫度下操作 係容許像是過氟化碳化合物（P F C s )的消耗臭氧、使 全球暖化的物質能夠被破壞。舉例來說，四氟化碳大約1 1 0 0 °C於開始燃燒。在高達1 2 0 0 °C的溫度下以一個 電熱器運作具有顯著的益處，由於會有災難性爆炸的風險 ，對於使用者來說的確不太願意使用某些禁用的、可用氣 體點燃的（例如，甲烷）氧化單元。 此外，可以選擇用於在該熱氧化單元1 0 2之內實施 的金屬，用以即使在存在有高度侵蝕性的氟之情況中提供 適當的抗侵蝕性。此外，選擇用於熱氧化單元1 0 2之超 合金金屬管件的尺寸大小較佳地是被選擇來提供足夠之用 於甲矽烷以及其他有毒氣體的氧化能夠大致上被完成的反 應時間，同時能夠保持氣體速度足夠大來將微粒在該管件 內壁上的沉積減少到最小的程度。 一般來說，可以根據存在於該減弱系統1 〇 〇之各種 階段的不同環境情況來選擇在該減弱系統1 〇 〇之各種階 段的金屬。舉例來說，可以選擇一種的金屬用於一個像是 在熱氧化單元1 0 2中的熱氣態區域，而在一個像是微粒 去除益1 0 4中的冷濕化區域選擇另一^種金屬。 一種可以被實施於該系統1 0 〇中作爲一個熱氧化單 14 546162 元之裝置的例子係被描述於美國專利第5，2 9 5，4 4 8號，標題爲“有機化合物焚化爐”中，如同於本文中所 提出者，該專利全體係被加入本文以作爲所有目的之參考 〇 微粒去除器 微粒去除器1 0 4係被用於由該減弱系統1 0 0所提 供之減弱製程的第二階段。微粒去除器1 0 4的一個例子 是通常被稱爲濕性擦洗器的一種裝置。舉例來說，一種可 從丁 e c H a r m ο n i c公司獲得高溫的渦流擦洗器（ HTVS)可以被用來當作一種微粒去除器1〇4;然而 ，實施例並不限於使用該特定參考的微粒去除器1 0 4。 一種適當的微粒去除器1 0 4係被描述於美國專利申請案 第09/846，495號，標題爲“用於從半導體製程 之廢棄物氣流去除危險物質的處理系統”之中。 該微粒去除器1 0 4係直接被接合到該熱氧化單元1 0 2。由於微粒去除器1 〇 4與熱氧化單元1 〇 2之間的 直接接合（亦即，不具有鄰接管子的接合），該系統10 0堵塞的可能性係被顯著地降低。同樣地，在其中實施二 個或更多個熱氧化單元1 〇 2的實施例中，二個或更多個 微粒去除器1 〇 4係分別被直接接合至該等熱氧化單元。 微粒去除器1 0 4係運作來將廢棄物氣流的微粒相成 分與一部份高度水溶性的氣相成分（像是氟化氫，H F ) 一起去除。通過該微粒去除器1 〇 4的廢棄物氣流係包含 有來自於製程工具（例如，半導體製造製程工具）以及來 15 546162 自於在熱氧化單元1 Ο 2中之物質燃燒的微粒相成分。此 外，微粒去除器1 0 4係作用來在該熱氧化單元1 〇 2之 內產生一種渦流。因此，該微粒去除器1 〇 4係被用來冷 卻在該熱氧化單元1 0 2內部被加熱到一個上升溫度的廢 棄物氣流，並且有助於在該熱氧化單元1 〇 2之內混合該 氧化氣體以及廢棄物氣體。 通用污水坑底座 微粒去除器1 0 4係將帶有被攜載之固體的氣態與液 態廢棄物排放到一個像是通用污水坑底座1 0 6之通用的 污水坑底座，該污水坑底座係被直接地接合到該微粒去除 器1 0 4。在一個包含有複數個微粒去除器1 〇 4之系統 1 0 0的實施中，該等複數個微粒去除器1 0 4中之任何 數目的微粒去除器（較佳地是全部的微粒去除器）可以被 直接地接合到該通用污水坑底座1 0 6。同樣地，在一個 包含有複數個封裝圓柱1 0 8之系統1 0 0的實施中，該 等複數個封裝圓柱1 0 8中之任何數目的封裝圓柱（較佳 地是全部的封裝圓柱）可以被直接地接合到該通用污水坑 底座1 0 6。因此，該等複數的封裝圓柱1 0 8可以當作 一個單獨的裝置運作。 該微粒去除器1 0 4可以被接合到該通用污水坑底座 1 0 6，使得該微粒去除器的下方端部實質上會與該通用 污水坑底座1 0 6的上方面齊平，或是使得該微粒去除器 的下方端部部分地延伸通過該上方面並且進入通用污水坑 底座1 0 6的主體之中。結果，係不會有具有堵塞風險之 16 546162 鄰接的配管系統。此外，該通用污水坑底座1 Ο 6可以被 直接接合到一個或更多個封裝圓柱1 0 8而不會有具有堵 塞風險之鄰接的配管系統。 在使用時，該通用污水坑底座1 0 6含有水或是一些 其他適當的液體，其係被保持在該通用污水坑底座1 0 6 內的一個特定位準處。由於有部分會持續地被洗淨、再循 環、以新鮮的水補充，該通用污水坑底座1 0 6內之水內 容物的構成係會變化。一部份的水會被洗淨以去除來自於 先前階段之一部份的微粒。該部分被再循環的水雖然不是 完全“乾淨的”，仍然具有顯著的淸潔能力，並且會被再 循環而遍及整個系統，主要是再循環到微粒去除器1 0 4 以及/或封裝圓柱1 0 8。因此，經由水的循環以及控制 程序，可以符合使用者對於該系統1 0 0之水的消耗（通 常是很嚴格的）之需求。除此之外，在該通用污水坑底座 1 0 6之內的水蒸氣會上升進入並且通過該微粒去除器1 0 4以及進入該熱氧化單元1 0 2，藉以幫助尤其是在該 熱氧化單元1 〇 2中的反應製程。 在該通用污水坑底座1 0 6之內的廢棄物氣體會遷移 通過在該通用污水坑底座1 0 6內之水的表面而到達該封 裝圓柱1 0 8，而有助於減弱來自於廢棄物氣體的危險物 質。再者，可以使用塑膠或是金屬變化形式的通用污水坑 底座1 0 6，藉以金屬的變化形式更進一步地有助於水的 冷卻。 在一個實施例中，該通用污水坑底座1 0 6係被建構 17 546162 成帶有一個大致上爲水平之有空隙的構件，亦即，一個假 的底層。該水平的構件係作用如同一個整合的熱交換器， 其係被建構成用以將廢棄物的水從被唧抽入一個位於該水 平構件下方之腔室的冷卻水分開’藉此更進一步地有助於 廢棄物水以及廢棄物氣體的冷卻。 在前文所描述的一個實施例中，複數個熱氧化單元1 0 2與微粒去除器1 0 4係被使用於該系統1 0 0之中， 藉以每個熱氧化單元1 0 2會接收一種分開的廢棄物氣流 ，且該蒸氣在混合的時候可能是可燃的。在此種實施例中 ，由於原來之各個廢棄物氣流的構成會改變，該分開的廢 棄物氣體蒸氣會在該減弱製程中燃燒的風險被顯著地降低 (如果不是完全被消除的話）之時間點於通用污水坑底座 1 0 6內被混合。 封裝圓柱 一個或是更多個封裝圓柱1 0 8係直接被接合到該通 用污水坑底座1 0 6。直接接合（也就是，沒有結合的配 管）的結果是表現出較小的堵塞風險。封裝圓柱1 0 8會 將氣體吸收到水中，而造成大量的有毒與侵蝕性物質會從 該廢棄物氣流轉移到一個水流。毒素接著可以藉著沉澱至 該封裝圓柱1 0 8外部的方式而被去除。封裝圓柱1 0 8 較佳地是使用一種噴灑的水，其係在該封裝圓柱1 〇 8的 一個上方區域處被導入並且向下行進。該噴灑的水會與在 該封裝圓柱1 0 8的一個下方區域處被導入並且向上流動 的廢棄物氣流互相作用。 18 546162 封裝圓柱1 Ο 8含有封裝材料，像是氧化鋁陶瓷或一 些其他的陶瓷基材料、不銹鋼、鐵氟龍（T e f 1 〇 η ) 、或是聚丙烯。當水向下流過該封裝材料時，水會從該廢 棄物氣流吸收像是氟化氫的酸性氣體。此外，水可以吸收 在先前之系統1 0 0其他階段未被從該廢棄物氣流去除的 微粒物質。 該系統1 0 0可以被配備有多於一個的封裝圓柱1 〇 8，每個封裝圓柱係被直接接合到該通用污水坑底座1 〇 6。如此一來，該等複數個封裝圓柱1 〇 8會接收從每個 微粒去除器1 0 4流出的廢棄物氣流，該廢棄物氣流係在 通用污水坑底座1 0 6之內被混合並且被動地被分配到該 等封裝圓柱1 0 8。在這種構造之中，該等複數個封裝圓 柱1 0 8係如同一個單一的單元般作用。 乾性擦洗筒 該廢棄物氣流係從一個或更多個封裝圓柱1 0 8處前 進到一個乾性擦洗筒1 1 0。該系統1 0 0可以被建構成 帶有一個或更多個Ρ形彎管以及/或過濾器，用以在該廢 棄物氣流進入該乾性擦洗筒1 1 0之前乾燥該廢棄物氣流 。如第一圖所描述的，該系統1 0 〇可以包括有一個或更 多個像是除霧裝置的光學過濾器1 1 2。 在一個其中具有多個封裝圓柱1 0 8的構造中，在進 入一個或更多個乾性擦洗筒1 1 0之前’離開該封裝圓柱 1 0 8的氣體可以被結合在一起並且接著通過一個單獨的 過濾器1 1 2或是多個串聯建構的過濾器1 1 2。替代地 19 546162 ，離開封裝圓柱1 Ο 8的氣體在進入各個過濾器1 1 2或 是乾性擦洗筒1 1 0之前可以不用被結合，而是每種氣體 從一個封裝圓柱1 0 8到一個乾性擦洗筒1 1 0的路徑可 以與其他相似的氣體路徑無關。再者，在一個其中具有二 個或更多個乾性擦洗筒1 1 0的構造中，離開封裝圓柱1 0 8或是過濾器1 1 2的氣體可以被結合在一起並且進入 通過一個單獨的入口，而到達二個或更多個串聯的乾性擦 洗筒1 1 0。替代地，每個離開封裝圓柱1 0 8或是過濾 器1 1 2的氣體路徑可以與其他相似的氣體路徑無關，且 每個氣體路徑係通過各個並聯的乾性擦洗筒1 1 0。 乾性擦洗筒1 1 0係含有一種吸收性樹脂，用以經由 熱氧化或是微粒去除來提供高標準之微小殘餘污染物的去 除，其中，該微小殘餘物係經由熱氧化或微粒去除而並未 被減弱到一個所希望之效率標準。顯而易見地，在系統1 0 0之中，乾性擦洗筒是被建構在封裝圓柱1 0 8之後， 而不是持續地將大量的新鮮水循環通過系統1 0 0或是將 離開封裝圓柱1 0 8的廢棄物氣流經由微粒去除器1 0 4 送回（二者皆非爲最佳或是所希求者）。再者，因爲該乾 性擦洗筒在該系統1 0 0中的位置是在熱氧化單元1 〇 2 、微粒去除器1 0 4、以及封裝圓柱1 0 8的後方，相關 於單獨座落的乾性擦洗器來說，該乾性擦洗筒丨1 〇會有 增加的使用壽命以及增加的效率。 根據一個實施例，離開該乾性擦洗筒1 1 0之氣流的 一部份會被再循環而回到該熱氧化單元1 0 2以及系統1 20 546162 Ο 0的其餘部分，而造成系統1 Ο 0中減弱危險物質的效 率顯著地增加。 用於減弱來自於廢棄物氣流之危險物質的製程 建構一個像是系統1 0 0的減弱系統，用以有效率地 並且有效地減弱具有高度內容物之毒性與侵蝕性物質的廢 棄物氣流（像是來自於半導體製程工具之廢棄物氣流）係 需要相當程度地了解進入該系統1 0 〇之廢棄物氣體、以 及當該廢棄物氣流在移動通過該系統1 〇 〇時其於所有位 置點的內容物、狀態、以及特性。 此種了解程度係來自於以實際上的實地經驗爲基礎來 測試以及分析該等氣體。舉例來說，測試可更進一步地發 現到四氟化碳是如何在沒有開方式火焰的情況下在1 2 0 0 °c起反應的。因此，藉著測試以及分析在系統1 0 〇各 種階段之氣體的內容物、狀態、以及特性所獲得的知識係 產生了一種接受強烈毒性以及侵蝕性物質，並且該等物質 減弱到可以安全地呼吸從該系統1 0 0排出之氣體的程度 之系統。 第二圖是一個流程圖，其說明了一種用於減弱來自於 廢棄物氣流之危險物質的製程。該製程的一個例子（相關 於在一個減弱典型半導體製造工具之廢棄氣體的製程期間 所發生的化學反應）係如下文所述。 在方塊2 0 2處，在一個輸入之廢棄物氣流中的可燃 物質係被氧化。舉例來說，半導體製造程序的一般階段係 會牽涉到半導體的積層以及/或蝕刻。因此，到達該減弱 21 546162 製程處的一般輸入氣流會含有氫氣（Η 2 )、六氟化鎢（w F 6 )、甲矽烷（s i Η 4 )、以及像是四氟化碳c F 4 ( 用於蝕刻製程）的過氟化碳化合物（P F C s )。根據方 塊2 0 2來處理氣流，亦即，經由使用熱氧化單元1 〇 2 (參見第一圖）來燃燒氫氣、大部分的過氟化碳化合物、 以及甲矽烷會產生一個數量的二氧化矽、或是砂子。鎢的 化合物則相對地無法被減弱。 在方塊2 0 4處，該氣流之微粒相以及可溶於水之氣 相元素係例如經由微粒去除器1 0 4 (參見第一圖）而去 除。回到該例子，在該微粒去除器1 0 4之內的渦流會分 離並且去除砂子，並且鎢的化合物則會立刻爆炸成爲存在 於水中的氧化鎢，其會在後續的階段被去除。氟以及氟化 氫（H F )會前進至下一個階段。 在方塊2 0 6處，酸性氣體係會使用一個像是封裝圓 柱1 0 8 (參見第一圖）的封裝圓柱而被吸收。回到該例 子，氟以及氟化氫會被在封裝圓柱1 0 8中的水吸收。 最後，在方塊2 0 8處，殘餘的污染物係使用一個乾 性擦洗技術而被吸收。舉例來說，氟以及其他的酸性氣體 會經由使用乾性擦洗筒1 1 0 (參見第一圖）而顯著地被 減弱（如果不是完全地被去除的話）。 一種半導體製造工具可以運作一個大約爲4 0到4 5 分鐘的半導體製程（通常是以氨或是以鹼性物質爲基礎的 製程），並且接著一個大約爲2 0到3 0分鐘之工具淸潔 的製程（通常是以例如氟化氫之酸性物質爲基礎的製程） 22 546162 。第二圖的製程可以被用來減弱製造工具的淸潔製程。舉 例來說，在該製程工具內的淸潔製程可以使用存在於一種 電漿中的六氟化二碳（c2f6)，因而會產生不具有氟化 氫、氟、以及氟化物的根基物，該根基物會侵襲沉積在工 具容室中的矽。這種淸潔製程會形成六氟化矽（s i 2 F 6 )，並且該系統1 0 0所接收的廢棄物氣流會含有在一個 混合固相與氣相之氣流中的六氟化矽與氟、以及像是六氟 化二碳的過氟化物。 舉例來說，在方塊2 0 2處，在該熱氧化單元1 〇 2 (參見第一圖）之中，氟會以熱起反應而形成氟化氫，氟 化氫係比氟更容易擦洗。此外，大部分的過氟化物會被燒 掉。舉例來說，在方塊2 0 4處，在該微粒去除器1 〇 4 (参見弟一^圖）之中，該製程以及系統1 0 0係被負以重 荷，用以從該製造工具的淸潔製程去除大量的微粒。再者 ，舉例來說，在方塊206處，在封裝圓柱108(參見 第一圖）之中，該製程以及系統1 0 0係再度被負以重荷 ，用以經由吸收到水來去除氟化氫以及氟。 再一次地，在方塊2 0 8處，殘餘的污染物是使用一 種乾性擦洗技術而被吸收。舉例來說，氟以及其他的酸性 氣體會經由使用乾性擦洗筒1 1 0 (參見第一圖）而顯著 地被減弱（如果不是完全地被去除的話）。 _文的內容是以一種根據在第二圖之流程圖中所描繪 之製程的系統1 0 0運作之示例來呈現的。然而，使用本 發明的實施例並不需要以特殊的廢棄物氣流成分來作爲例 23 546162 子。該系統1 Ο 0支援件的集體功能、以及該等元件在一 種廢棄物氣流上所進行的一連串與操作係提供了廢棄物氣 流處理存在已久之問題（亦即，減弱來自於一種廢棄物氣 流的危險物質）以一種有用的並且有效率的解決方案。 擴充與替代方案 本發明的替代性實施例係於前文中完整地被描述，並 且在能夠最佳地幫助了解該等實施例的內容。此外，本發 明已經根據其特殊實施例而被描述。然而，很明顯的是， 可以對本發明進行各種修改以及改變而不會背離本發明之 較廣的精神與範疇。舉例來說，其中遭受到減弱之廢棄物 氣流係從一個半導體製造工具處被輸出的實施係被呈現出 來。然而，本文所描述的技術並不限於與半導體製造工具 與製程一起使用，其他的工具以及製程可以從本文所述的 系統與方法而受益。因此，本說明書與圖式係據以以作爲 說明之用，而不是對於本發明的一個限制。 除此之外，在本說明之中，某些製程步驟係以一種特 殊的順序提出，並且字母以及字母與數字符號的符號可以 被用來辨識某些步驟。除非是具體地在說明之中被描述， 本發明的實施例並不需要被限制在實施此等步驟之任何特 殊順序。尤其是，該等符號僅是被用來方便地辨識步驟， 並且不是要用來指定或是要求實施此等步驟之特殊順序。 【圖式簡單說明】 (一）圖式部分 本發明係以隨附圖式之圖表中示例的說明，而不是以 24 546162 限制的方式說明，在該等圖式中，相同的元件符號係指相 同的元件，並且在該等圖式中： 第一圖爲用於從廢棄物氣流減弱危險物質之系統的說 明視圖；以及 第二圖爲說明一個用於從廢棄物氣流減弱危險物質之 製程的流程圖。 (二）元件代表符號 1 〇 〇系統 熱氧化單元 1 0 4微粒去除器單元 通用污水坑底座 1 〇 8封裝圓柱 1 1 〇乾性擦洗筒 1 1 2光學過濾器 2 0 2方塊 2 0 4方塊 2 0 6方塊 2 0 8方塊 25发明 、 Cross-reference of related applications. This application is commonly-assigned US Patent Application No. 0 9/8 4 6,495 (filed on April 30, 2001, titled "Used to remove "Semiconductor process waste gas treatment system for hazardous materials") continuously claims and claims the priority of this patent application. The US patent application claims a US provisional patent application filed on May 1, 2000. Case No. 6 0/2 0 0, 9 5 9; and related to and claimed the title "Systems and Methods for Attenuating Hazardous Substances from Waste Streams", October 2001 26 is the benefit of priority of US Provisional Patent Application No. 6 0/3 4 7, 6 1 6; as fully filed herein, the above patent application is fully incorporated herein for all purposes Reference. [Technical Field to which the Invention belongs] The present invention relates generally to waste disposal, and, more particularly, the present invention relates to a hazardous substance that attenuates waste gas flow from a semiconductor process. [Previous Technology] Semiconductor manufacturing processes such as chemical vapor deposition (C V D) use several types of chemicals that are highly toxic, highly corrosive, highly flammable, highly flammable, or other hazardous. Generally, the process consumes only a small portion of these chemicals. Unconsumed chemicals, together with the reaction products of the particulate phase, leave the processing plant as a waste gas stream and flow into a discharge system. Because some components of this waste gas stream 46162 have dangerous or harmful properties, it is desirable and / or legally necessary to treat the waste gas stream before discharging it to the atmosphere to make it unacceptable The emissions of waste gas components are removed or reduced to a minimum. Some commercially available waste gas treatment systems can be used to remove selected gas and solid phase materials from a waste gas stream. One such system is described in U.S. Patent Nos. 5,295,444, entitled "Incinerator of Organic Compounds". Other systems for removing volatile organic compounds (V 0 C s) from a gas stream are described in the following patents: U.S. Patent No. 5,5 3 8, 5 4 1 entitled "For removing from air Device and method for removing volatile organic compounds from a stream ", U.S. Patent Nos. 5,6 6,7,5 5 9 and entitled" Apparatus and method for removing volatile organic compounds from an air stream ", and U.S. Patent No. 6 No. 0 2,7,50, entitled "Apparatus and method for removing volatile organic compounds from polluted air stream using absorbent materials". Due to the relatively high particulate loading and the uranium-corrosive nature of the waste gas stream associated with semiconductor manufacturing processes, users of previous waste gas processing systems often experience problems with blocked gas flow paths and component wear. Correction of these problems (for example, removing accumulated particulate matter or replacing eroded components) often requires temporarily shutting down related process equipment, resulting in unscheduled or undesired downtime. This unscheduled repair time increases overall manufacturing costs, and therefore has a large 46162 problem in the highly competitive and semiconductor basic manufacturing industry for basic price needs. Therefore, users of the 'first rule' processing equipment system must choose between reduced efficiency and downtime of the processing system. Fluoride is an extremely toxic gas, and its concentration in the single digits per million (p pm) can cause death. Therefore, before the waste gas stream is discharged to the atmosphere, the removal of fluorine and other acidic gases from the waste gas stream is what we want and legally need. Generally, in the previous waste gas treatment system, in order to reduce the acid gas to the required low standard, a relatively large amount of fresh water was needed, or the residual elements such as fluorine must be assisted by a wet scrubbing unit. deal with. These alternatives are not considered optimal. Examples are carbon tetrafluoride (CF 4, otherwise known as dichlorodifluoromethane R1 4) and dihexafluorocarbon (C2F6, otherwise known as dichlorodifluoromethane R1). 16) PFC s are considered to be ozone depleting, global alert substances. Therefore, the removal of these substances from the waste gas stream before we discharge it into the atmosphere is what we want and legally the need. In addition, perfluorocarbons (P F C s) are often associated with relatively high combustion temperatures. For example, carbon tetrafluoride begins to burn at a temperature of about 11,000 ° C. In general, previous waste gas treatment systems were either unable to reach the temperatures required to completely burn many perfluorocarbon substances, or they relied on open flames to reach the required temperatures, thereby increasing the number of Undesirable risk of explosion. For the above reasons, it is very clear that an improved mechanical device is needed to treat the waste gas stream, such as the waste gas 546162 stream related to the semiconductor process. In addition, the system needs an efficient and reliable system to attenuate a wide range of hazardous materials from waste gas streams, and must consider the structural components of compounds in general semiconductor waste gas streams and all stages of waste gas treatment systems. compound of. In particular, there is a need for a separate device that can reduce the following types of pollutants: flammables, combustibles, fluorochemicals, perfluorocarbons, volatile organic compounds, acid gases, hydrides, and other semiconductor compartments Clean gas. [Summary of the Invention] A system for attenuating hazardous substances from a waste gas stream includes (1) a thermal oxidation unit, which is constructed to collect a waste gas stream; (2) a wet A particulate remover of the scrubbing unit, which is directly bonded to the thermal oxidation unit; (3) a general sewage pedestal base, which is bonded to the particulate remover and (4) a packaging cylinder; and (5)- A dry scrubbing cartridge, which is joined to the packaging cylinder, thereby attenuating the residual chemical constituents found in the waste gas stream. With regard to reducing the particulate gas phase and solid phase components from the waste gas stream, the unique functions of each of these processing stages are combined to provide a highly disruptive process to extensively destroy the waste gas stream. The target compound found in. For non-limiting examples of possible completions, the embodiments can be used to reduce the semiconductor chemical vapor deposition process and weaken the semiconductor etching process to reduce the following pollutants: flammable, combustible, fluorinated compounds, Perfluorocarbons, volatile organic compounds, acid gases, hydrides. 546162 In one aspect, the system can be implemented with a parallel structure that can receive separate and independent airflows, for example, airflow from a two-stage semiconductor process tool. In addition, the two gas streams may be highly reactive with each other, that is, they may be highly flammable or explosive when they become a mixed compound. The construction of the system ensures that there will be no mixing of air streams until the explosive components have been sufficiently altered or eliminated. In one embodiment, the thermal oxidation unit is electrically heated and can operate at a maximum of 120 ° C. Operating in this temperature mechanism provides for the destruction of ozone-depleting substances, such as perfluorocarbons (P F C s) such as carbon tetrafluoride. Furthermore, the previous goal was achieved by significantly reducing the risk of inadvertent combustion in the system, which is often encountered in gas-heated systems. [Embodiment] Attenuation system The first figure illustrates a system 100 for attenuating hazardous substances from waste gas streams. The system 1 0 0 contains one or more thermal oxidation units 10 2, one or more particulate remover units 1 0 4, a general sewage sink base 1 0 6, and one or more encapsulated cylinders 1 0 8, and one or more dry scrub cartridges 1 1 0. In addition, the system 100 may include one or more optical filters 1 12 between a packaging cylinder 108 and a dry scrubbing cylinder 1 110. As described in the first figure, according to one embodiment, the system 100 includes two parallel thermal oxidation units 102, two particulate remover units 11 546162 1 〇4, two packaging cylinders 1 〇 8, Two dry scrubbing cylinders 1 10 and two filters 1 12. However, the symbol of each element may change in each case of implementation. Thermal oxidation unit The thermal oxidation unit 102 is constructed to receive a waste gas stream through an inlet. In one embodiment, the waste gas stream is a waste gas stream like a semiconductor process from a semiconductor manufacturing tool. In an embodiment comprising two or more thermal oxidation units 102 in series, each thermal oxidation unit 102 is constructed to receive a different waste gas stream. For example, some semiconductor process tools include two independent chambers that perform separate manufacturing processes (such as a chemical vapor deposition (CVD) process and an etching process). Each chamber emits a different type of chamber. Waste airflow. In some cases, the two waste streams emitted from the manufacturing tool are combustible when mixed. For example, a process can emit N F 3, which can be considered as an oxidizing agent, and a self-ignitable silane (S i Η 4, s i lane). Therefore, in an embodiment in which two thermal oxidation units are used, a first thermal oxidation unit 102 is constructed to receive a first waste gas stream containing a first gas, and a first The second thermal oxidation unit 102 is constructed to receive a second waste gas stream containing a second gas, wherein the first gas stream and the second gas stream are combustible when mixed. One of the first steps in using this system to weaken the process is to thermally oxidize one or more waste streams 12 546162 in each thermal oxidation unit 102. In the thermal oxidation unit 102, the waste gas stream is mixed with an oxidation gas stream which is injected into the unit 102 through an oxidation gas inlet. An oxidizing gas stream, which may include air or an air / oxygen mixture, is injected into the waste gas stream in a high pressure state to cause turbulence, and therefore, rapid mixing of the waste in the thermal oxidation unit 102 Matter gas stream and the oxidation gas stream. The oxidizing gas also helps to maintain the condensable solids present in the waste gas stream in a gas phase until they are removed. In addition, the type and quantity of the oxidizing gas to be added to the waste gas stream can be adjusted according to the composition of the waste gas and / or according to the demand for weakening particles. The mixture of waste gas and oxidizing gas is passed through a high-temperature reaction zone inside the thermal oxidation unit 102, where the perfluorocarbon compounds, spontaneous flammability, and flammable components of the waste gas stream are in Burned in the area. In one embodiment, the thermal oxidation unit 102 includes one or more electric heaters. For example, a traditional radiant ceramic resistance heater can be used, or a suitable alternative. In another embodiment, the thermal oxidation unit 102 includes a superalloy metal pipe covered by one or more electric heaters, and a waste gas stream passes through the pipe. As used herein, the term "superalloy" refers to a metal that is resistant to heat and corrosion. Examples of alloys that may be selected for this implementation include nickel-based metals, some of which are available from specialized metal companies and sold under the following brand names: INCONEL®, INC 〇LAY⑧, NIM〇NIC⑧ , Or MONEL⑧, or are available from Haynes International and sold under the following trade names: 13 546162 HAYNE S⑧, and HASTE LL〇Y®. One such metal that can be used is INCONEL® 60 1. Because the metal is used at various positions in the thermal oxidation unit, the surface of the superalloy metal pipe fitting and thus the thermal oxidation unit 10 2 can operate at a temperature of 12 0 ° C. Operating at such high temperatures allows ozone-depleting substances such as perfluorocarbons (P F C s) to be destroyed by substances that cause global warming. For example, carbon tetrafluoride begins to burn at about 110 ° C. Operating with an electric heater at temperatures up to 12 0 ° C has significant benefits. Because of the risk of catastrophic explosions, it is indeed reluctant for users to use certain forbidden, ignitable gases ( For example, methane) oxidation unit. In addition, the metal used in the thermal oxidation unit 102 can be selected to provide appropriate corrosion resistance even in the presence of highly aggressive fluorine. In addition, the size of the superalloy metal pipe selected for the thermal oxidation unit 102 is preferably selected to provide a sufficient reaction time for the oxidation of silane and other toxic gases to be substantially completed, while being able to The gas velocity is kept large enough to minimize the deposition of particles on the inner wall of the tube. Generally, the metals in the various stages of the weakening system can be selected according to the different environmental conditions that exist in the various stages of the weakening system. For example, one metal may be selected for a hot gaseous region such as in the thermal oxidation unit 102, and another metal may be selected for a cold humidified region such as in the particulate removal benefit 104. . An example of a device that can be implemented in the system 100 as a thermal oxidation unit at 14,546,162 yuan is described in U.S. Patent No. 5, 2 9 5, 4 48, entitled "Organic Compound Incinerator" As proposed in this article, the entire patent system is incorporated herein as a reference for all purposes. Particulate remover Particulate remover 104 is used as the first part of the weakening process provided by the weakening system 100. Two phases. An example of a particulate remover 104 is a device commonly referred to as a wet scrubber. For example, a high-temperature vortex scrubber (HTVS), available from Ding H Armonic Corporation, can be used as a particulate remover 104; however, the embodiments are not limited to using particulates of this particular reference Remover 1 0 4. A suitable particulate remover 104 is described in U.S. Patent Application No. 09 / 846,495, entitled "Processing System for Removal of Hazardous Substances from Waste Gas Streams of Semiconductor Processes". The particulate remover 104 is directly bonded to the thermal oxidation unit 102. Due to the direct bonding between the particulate remover 104 and the thermal oxidation unit 102 (ie, without the bonding of an adjoining tube), the possibility of blockage of the system 100 is significantly reduced. Likewise, in an embodiment in which two or more thermal oxidation units 102 are implemented, two or more particulate removers 104 are directly bonded to the thermal oxidation units, respectively. The particulate remover 104 operates to remove the particulate components of the waste gas stream together with a portion of the highly water-soluble gas phase components (such as hydrogen fluoride, H F). The waste gas stream passing through the particulate remover 104 includes particulate phase components from a process tool (for example, a semiconductor manufacturing process tool) and from the combustion of a substance in the thermal oxidation unit 102. In addition, the particulate remover 104 functions to generate a vortex within the thermal oxidation unit 102. Therefore, the particulate remover 104 is used to cool the waste gas stream heated to a rising temperature inside the thermal oxidation unit 102, and helps to mix the thermal oxidation unit 102 within the thermal oxidation unit 102. Oxidation gas and waste gas. The general sewage pit base particle remover 104 discharges the gaseous and liquid wastes with the carried solids to a general sewage pit base like the general sewage pit base 106, which is Directly bonded to the particle remover 104. In the implementation of a system 100 including a plurality of particle removers 104, any number of particle removers (preferably all particle removers) in the plurality of particle removers 104 Can be directly joined to the universal sink base 106. Similarly, in an implementation of a system 100 including a plurality of packaging cylinders 108, any number of packaging cylinders (preferably all packaging cylinders) in the plurality of packaging cylinders 108 may be It is directly bonded to the universal sink base 106. Therefore, the plurality of packaged cylinders 108 can be operated as a single device. The particulate remover 104 can be joined to the universal sink base 106, so that the lower end of the particulate remover is substantially flush with the upper side of the universal sink base 106, or The lower end of the particulate remover partially extends through the upper side and enters the body of the universal sewage pedestal base 106. As a result, there will be no 16 546162 contiguous piping system with a risk of clogging. In addition, the universal sewage pedestal base 106 can be directly bonded to one or more encapsulation cylinders 108 without an adjacent piping system with a risk of plugging. In use, the general sewage pit base 106 contains water or some other suitable liquid, which is kept at a specific level within the general sewage pit base 106. Because some parts are continuously washed, recycled, and replenished with fresh water, the composition of the water contents in the base of the general sewage pit will change. Part of the water is washed to remove particles from a part of the previous stage. Although this part of the recycled water is not completely "clean", it still has significant cleaning ability and will be recycled throughout the system, mainly to the particle remover 1 0 4 and / or the encapsulation cylinder 1 0 8. Therefore, the water circulation and control program can meet the user's needs for the water consumption of the system (usually very strict). In addition, the water vapor within the general sewage pit base 106 will rise into and pass through the particulate remover 104 and into the thermal oxidation unit 102, thereby helping especially in the thermal oxidation unit Reaction process in 1002. The waste gas in the general sewage pit base 106 will migrate through the surface of the water in the general sewage pit base 106 to reach the encapsulation cylinder 108, thereby helping to weaken the waste from the waste. Dangerous substance of gas. Furthermore, a universal sewage pedestal base 106 in the form of plastic or metal can be used to further facilitate the cooling of the water by using the metal form. In one embodiment, the universal sewage pedestal 106 is constructed 17 546162 with a substantially horizontal, voided member, i.e., a false floor. The horizontal component acts like an integrated heat exchanger, which is constructed to separate the waste water from the water being pumped into the chamber below the horizontal component, thereby taking it one step further. Helps to cool waste water and waste gas. In an embodiment described above, a plurality of thermal oxidation units 102 and a particulate remover 104 are used in the system 100, whereby each thermal oxidation unit 102 receives a separate Waste gas stream, and the vapor may be flammable when mixed. In such an embodiment, because the original composition of each waste gas stream will change, the point at which the risk of the separate waste gas vapors burning during the weakening process is significantly reduced (if not completely eliminated) It is mixed in the general sewage pedestal base 106. Encapsulated cylinders One or more encapsulated cylinders 108 are directly bonded to the general sink base 106. As a result of direct coupling (ie, uncoupled piping), there is less risk of clogging. The encapsulating cylinder 108 absorbs gas into the water, causing a large amount of toxic and aggressive substances to be transferred from the waste gas stream to a water stream. Toxins can then be removed by precipitating to the outside of the encapsulated cylinder 108. The package cylinder 10 8 preferably uses a sprayed water which is introduced at an upper region of the package cylinder 108 and travels downward. The sprayed water interacts with a waste gas stream which is introduced at a lower area of the packaging cylinder 108 and flows upward. 18 546162 Encapsulation cylinder 108 contains encapsulation materials, such as alumina ceramics or some other ceramic-based materials, stainless steel, Teflon (T e f 1 〇 η), or polypropylene. As water flows down through the packaging material, it absorbs acid gases like hydrogen fluoride from the waste stream. In addition, water can absorb particulate matter that was not removed from the waste gas stream during other stages of the previous system 100. The system 100 can be equipped with more than one package cylinder 108, each package cylinder system being directly bonded to the universal sink base 106. In this way, the plurality of encapsulated cylinders 108 will receive the waste gas stream flowing from each particle remover 104, and the waste gas stream is mixed within the general sewage pit base 106 and passively Assigned to these packaged cylinders 108. In this configuration, the plurality of packaged pillars 108 function as a single unit. Dry scrubber This waste gas stream advances from one or more sealed cylinders 108 to a dry scrubber 1 1 0. The system 100 can be constructed with one or more P-shaped elbows and / or filters to dry the waste gas stream before the waste gas stream enters the dry scrubber cylinder 110. As described in the first figure, the system 100 may include one or more optical filters 1 12 like a defogging device. In a configuration in which there are multiple encapsulated cylinders 108, the gases' leaving the encapsulated cylinder 108 before entering one or more dry scrub cartridges 110 are combined and then passed through a separate Filter 1 1 2 or multiple filters 1 1 2 constructed in series. Instead of 19 546162, the gases leaving the packaging cylinder 108 may not be combined before entering each filter 1 12 or the dry scrub cartridge 1 1 0, but each gas from a packaging cylinder 108 to a dry The path of the scrubbing cylinder 110 may be independent of other similar gas paths. Furthermore, in a configuration having two or more dry scrubbing cartridges 1 10 therein, the gases leaving the packaging cylinder 108 or the filter 1 12 may be combined together and enter through a separate inlet , And reached two or more dry scrub cartridges 1 1 0 in series. Alternatively, each gas path leaving the package cylinder 108 or the filter 1 12 may be independent of other similar gas paths, and each gas path passes through each of the parallel dry scrubbing cylinders 1 1 0. The dry scrub cartridge 1 10 contains an absorbent resin to provide a high standard of removal of tiny residual contaminants through thermal oxidation or particulate removal. The tiny residue is not removed by thermal oxidation or particulate removal. Weakened to a desired standard of efficiency. Obviously, in the system 100, the dry scrubbing cylinder is constructed after the package cylinder 108, instead of continuously circulating a large amount of fresh water through the system 100 or the waste that leaves the package cylinder 108 The object gas stream is returned through the particle remover 104 (neither is the best or desirable). Furthermore, because the position of the dry scrub cartridge in the system 100 is behind the thermal oxidation unit 10, the particulate remover 104, and the packaging cylinder 108, it is related to the dry scrub of the stand alone As for the device, the dry scrubbing cylinder 丨 10 will have an increased service life and increased efficiency. According to one embodiment, a part of the air stream leaving the dry scrubbing cylinder 1 10 will be recirculated back to the thermal oxidation unit 102 and the rest of the system 1 20 546 162 0 0, resulting in the system 1 0 0 The efficiency of weakening hazardous substances has increased significantly. The process for weakening hazardous substances from waste gas streams builds a weakening system like system 100 to efficiently and effectively attenuate waste gas streams with highly content toxic and aggressive substances (like Is the waste gas stream from the semiconductor process tool) requires considerable understanding of the waste gas entering the system 100 and its content at all locations as the waste gas stream moves through the system 1000 Things, states, and characteristics. This level of understanding comes from testing and analyzing these gases based on actual field experience. For example, testing can further discover how carbon tetrafluoride reacts at 12 0 ° C without an open flame. Therefore, the knowledge gained by testing and analyzing the contents, states, and characteristics of gases at various stages of the system has produced a substance that accepts strong toxic and aggressive substances, and that these substances are weakened to breathe safely. The degree of gas exhausted from the system 100. The second figure is a flowchart illustrating a process for reducing hazardous materials from waste streams. An example of this process (related to a chemical reaction that occurs during a process that weakens the waste gas of a typical semiconductor manufacturing tool) is described below. At block 202, the combustible material in an incoming waste gas stream is oxidized. For example, the general stages of a semiconductor manufacturing process involve the stacking and / or etching of semiconductors. Therefore, the general input gas stream reaching this weakened 21 546162 process will contain hydrogen (Η 2), tungsten hexafluoride (w F 6), silane (si Η 4), and carbon tetrafluoride c F 4 ( Perfluorocarbons (PFCs) used in etching processes). Process the gas stream according to block 202, that is, by using a thermal oxidation unit 102 (see the first figure) to burn hydrogen, most of the perfluorocarbons, and silane to produce an amount of silicon dioxide Or sand. Tungsten compounds are relatively unabated. At block 204, the particulate phase of the gas stream and the water-soluble gas phase elements are removed, for example, via a particulate remover 104 (see the first figure). Returning to this example, the vortex within the particulate remover 104 will separate and remove sand, and the tungsten compound will immediately explode into tungsten oxide present in the water, which will be removed at a later stage. Fluorine and hydrogen fluoride (H F) will advance to the next stage. At block 206, the acid gas system is absorbed using a packaged cylinder like packaged cylinder 108 (see figure 1). Returning to this example, fluorine and hydrogen fluoride will be absorbed by water in the package cylinder 108. Finally, at block 208, residual contaminants are absorbed using a dry scrubbing technique. For example, fluorine and other acid gases can be significantly attenuated (if not completely removed) by using a dry scrub cartridge 1 1 0 (see the first figure). A semiconductor manufacturing tool can operate a semiconductor process (usually based on ammonia or alkaline substances) for about 40 to 45 minutes, and then a tool cleaning for about 20 to 30 minutes Process (usually based on acidic materials such as hydrogen fluoride) 22 546162. The process of the second figure can be used to weaken the cleaning process of manufacturing tools. For example, the cleaning process in the process tool can use dicarbon hexafluoride (c2f6), which is present in a plasma, so that it will generate a root substance without hydrogen fluoride, fluorine, and fluoride. The root substance Will attack silicon deposited in the tool compartment. This cleaning process will form silicon hexafluoride (si 2 F 6), and the waste gas stream received by the system 100 will contain silicon hexafluoride and fluorine in a mixed solid and gaseous gas stream. And perfluoride like dicarbon hexafluoride. For example, at block 202, in the thermal oxidation unit 102 (see the first figure), fluorine reacts with heat to form hydrogen fluoride, which is easier to scrub than fluorine. In addition, most of the perfluoride is burned. For example, at block 204, in the particle remover 104 (see Fig. 1), the process and the system 100 are loaded with a heavy load from the manufacturing tool. The cleaning process removes a large number of particles. Furthermore, for example, at block 206, in the encapsulation cylinder 108 (see the first figure), the process and the system 100 are again heavily loaded to remove hydrogen fluoride and fluorine by absorbing water. . Once again, at block 208, residual contaminants are absorbed using a dry scrubbing technique. For example, fluorine and other acid gases can be significantly attenuated (if not completely removed) by using a dry scrub cartridge 1 1 0 (see the first figure). The content of the text is presented as an example of the operation of the system 100 according to the process depicted in the flowchart in the second figure. However, using the embodiments of the present invention does not require special waste gas stream components to be used as examples 23 546162. The collective function of the system's 100 support pieces and the series of operations performed by these components on a waste gas stream provide a long-standing problem with waste gas treatment (ie, reducing the Hazardous substances) with a useful and efficient solution. Extensions and Alternatives Alternative embodiments of the present invention have been fully described in the foregoing, and can best assist in understanding the content of these embodiments. Furthermore, the invention has been described in terms of its particular embodiment. However, it is apparent that various modifications and changes can be made to the present invention without departing from the broader spirit and scope of the present invention. For example, implementation systems in which attenuated waste gas streams are exported from a semiconductor manufacturing tool are presented. However, the techniques described herein are not limited to use with semiconductor manufacturing tools and processes. Other tools and processes can benefit from the systems and methods described herein. Therefore, the description and drawings are used for the purpose of illustration and not a limitation of the present invention. In addition, in this description, certain process steps are presented in a special order, and letters and symbols of letters and numbers can be used to identify certain steps. Unless specifically described in the description, embodiments of the present invention need not be limited to any particular order in which these steps are performed. In particular, these symbols are only used to facilitate the identification of steps, and are not intended to specify or require a special order for such steps. [Brief description of the drawings] (I) Schematic part The present invention is illustrated by examples illustrated in the accompanying drawings, rather than being restricted by 24 546162. In these drawings, the same component symbols refer to Identical components, and in these drawings: The first diagram is an explanatory view of a system for attenuating a hazardous substance from a waste stream; and the second diagram is an illustration of a process for attenuating a hazardous substance from a waste stream. flow chart. (II) Symbols of components 1 00 System thermal oxidation unit 10 4 Particulate remover unit Universal sewage pit base 1 08 Package cylinder 1 1 〇 Dry scrubbing cylinder 1 1 2 Optical filter 2 0 2 box 2 0 4 box 2 0 6 box 2 0 8 box 25